Semiconductor device

Abstract

To provide a semiconductor device in which high frequency characteristics are improved.SOLUTION: A semiconductor device 1 comprises: an insulation member 10; a light-receiving element 20 that is mounted on a front surface of the insulation member 10; a light-emitting element 30 that is mounted on the light-receiving element 20, and is optically coupled to the light-receiving element 20; switching elements 40a and 40b that are arranged along the light-receiving element 20 on the front surface of the insulation member 10, and are electrically connected to the light-receiving element 20; first metal terminals 50a and 50b that are provided on a rear surface of the insulation member 10, and electrically connected to the light-emitting element 30; second metal terminals 60a and 60b that are provided on the rear surface of the insulation member 10, and are electrically connected to the switching elements 15a and 15b; a metal reflection plate 19 that is provided near the light-receiving element on the front surface of the insulation member 10; a first resin member 33 that covers the light-emitting element 30 on the light-receiving element 20; and a second resin member 70 that covers the light-receiving element 20, the light-emitting element 30, the first resin member 33, the switching elements 40a and 40b, and the metal reflection plate 19 on the front surface of the insulation member 10.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments relate to semiconductor devices.

Background Art

[0002] Semiconductor devices for transmitting high-frequency signals are required to improve frequency characteristics. For example, in a photo relay including an optically coupled light-emitting element and a light-receiving element, it is desirable to reduce the impedance between output-side terminals and improve high-frequency passing characteristics. For example, when output-side terminals are arranged on the back surface side of a substrate on which a light-emitting element and a light-receiving element are mounted, the impedance between the output-side terminals can be reduced by reducing the thickness of the substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments provide a semiconductor device with improved high-frequency characteristics.

Means for Solving the Problems

[0005] The semiconductor device according to the embodiment includes an insulating member, a light receiving element mounted on the surface of the insulating member, a light emitting element mounted on the light receiving element and optically coupled to the light receiving element, a switching element arranged beside the light receiving element and electrically connected to the light receiving element on the surface of the insulating member, a first metal terminal provided on the back surface opposite to the surface of the insulating member and electrically connected to the light emitting element, a second metal terminal provided on the back surface of the insulating member and electrically connected to the switching element, a metal reflector provided near the light receiving element on the surface of the insulating member, a first resin member covering the light emitting element on the light receiving element, and a second resin member covering the light receiving element, the light emitting element, the first resin member, the switching element and the metal reflector on the surface of the insulating member.

Brief Description of Drawings

[0006]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Modes for Carrying Out the Invention

[0007] Hereinafter, embodiments will be described with reference to the drawings. The same parts in the drawings are denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate, and different parts will be described. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Also, even when representing the same part, the dimensions and ratios thereof may be represented differently depending on the drawings.

[0008] Furthermore, the arrangement and configuration of each part will be described using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are mutually orthogonal and represent the X direction, Y direction, and Z direction, respectively. Also, there are cases where the Z direction is described as upward and the opposite direction as downward.

[0009] FIG. 1 and FIG. 2 are schematic diagrams showing a semiconductor device 1 according to an embodiment. FIG. 1 is a schematic cross-sectional view showing the semiconductor device 1 according to the embodiment. FIG. 2 is a circuit diagram showing the configuration of the semiconductor device 1 according to the embodiment.

[0010] The semiconductor device 1 is, for example, a photo relay. The semiconductor device 1 includes an insulating member 10, a light receiving element 20, a light emitting element 30, a switching element 40a, and a switching element 40b.

[0011] The insulating member 10 is, for example, an insulating resin sheet. The insulating member 10 includes, for example, polyimide. The thickness of the insulating member 10 in the direction from the back surface to the front surface (Z direction) is, for example, 50 micrometers (μm).

[0012] On the surface of the insulating member 10, for example, bonding pads 13a, 13b, mount pads 15a, 15b, and 17 are provided. The bonding pads 13a, 13b, mount pads 15a, 15b, and 17 are, for example, metal layers containing copper. The thickness of each of the bonding pads 13a, 13b, mount pads 15a, 15b, and 17 in the Z direction is, for example, 30 μm.

[0013] Bonding pads 13a and 13b are provided in the vicinity of the mount pad 17 and are arranged, for example, in the Y direction. The bonding pad 13a and the mount pad 17 are arranged, for example, in the X direction. The bonding pad 13b and the mount pad 17 are arranged, for example, in the X direction.

[0014] The mount pad 17 is provided, for example, between the bonding pad 13a and the mount pad 15a and between the bonding pad 13b and the mount pad 15b.

[0015] The mount pads 15a and 15b are arranged, for example, in the Y direction. The bonding pad 13a and the mount pad 15a are arranged, for example, in the X direction. The bonding pad 13b and the mount pad 15b are arranged, for example, in the X direction.

[0016] On the back surface of the insulating member 10, control-side terminals 50a and 50b and output-side terminals 60a and 60b are provided (see Fig. 3(d)). The control-side terminals 50a, 50b and the output-side terminals 60a, 60b are, for example, metal layers containing copper. The thickness in the Z direction of each of the control-side terminals 50a, 50b and the output-side terminals 60a, 60b is, for example, 30 μm.

[0017] The control-side terminal 50a is provided so as to face the bonding pad 13a through the insulating member 10 (see Fig. 3(b)). The control-side terminal 50a is electrically connected to the bonding pad 13a through a via contact 53 provided in the insulating member 10. The via contact 53 contains, for example, the same material as the control-side terminal 50a. The via contact 53 contains, for example, copper. Other via contacts shown below are provided in the same manner.

[0018] The control-side terminal 50b is provided so as to face the bonding pad 13b through the insulating member 10. The control-side terminal 50b is also electrically connected to the bonding pad 13b through a via contact (not shown).

[0019] The output terminal 60a is provided to face the mounting pad 15a via the insulating member 10 (see Fig. 3(b)). The output terminal 60a is electrically connected to the mounting pad 15a via the via contact 63 provided in the insulating member 10. The output terminal 60a is electrically connected to the mounting pad 15a via, for example, a plurality of via contacts 63.

[0020] The output terminal 60b is provided to face the mounting pad 15b via the insulating member 10. The output terminal 60b is also electrically connected to the mounting pad 15b via a via contact (not shown).

[0021] The light receiving element 20 is mounted on the mounting pad 17 via the connecting member 23. The connecting member 23 is, for example, a solder material or a conductive paste. The light emitting element 30 is mounted on the light receiving element 20 via, for example, a light transmissive connecting member 35 (see Fig. 4(a)). The light emitting element 30 is optically coupled to the light receiving element 20. The light receiving element 20 includes, for example, a silicon photodiode. The light emitting element 30 is, for example, a light emitting diode (LED).

[0022] The switching elements 40a and 40b are respectively mounted on the mounting pads 15a and 15b via the connecting members 43. The connecting members 43 are, for example, a solder material or a conductive paste.

[0023] The switching elements 40a and 40b are, for example, vertical MOSFETs having a drain on the back side and a source on the front side. The switching elements 40a and 40b are respectively mounted on the mounting pads 15a and 15b such that the back sides face each other. The switching element 40a is electrically connected to the output terminal 60a via the mounting pad 15a and the via contact 63. The switching element 40b is electrically connected to the output terminal 60b via the mounting pad 15b and a via contact (not shown).

[0024] As shown in FIG. 1, the light receiving element 20 is electrically connected to the switching elements 40a and 40b via metal wires MW3 to MW6 (see FIG. 2). The switching element 40a and the switching element 40b are electrically connected via a metal wire MW7 (see FIG. 2).

[0025] The light emitting element 30 is electrically connected to the bonding pads 13a and 13b via metal wires MW1 and MW2, respectively. The light emitting element 30 is electrically connected to the control side terminal 50a via the bonding pad 13a and the via contact 53. Further, the light emitting element 30 is electrically connected to the control side terminal 50b via the bonding pad 13b and a via contact (not shown).

[0026] The light emitting element 30 is sealed on the light receiving element 20 by a resin member 33 (see FIG. 5(a)). The resin member 33 is, for example, silicone. Further, a resin member 70 is provided on the surface side of the insulating member 10. The resin member 70 is, for example, an epoxy resin. The resin member 70 has, for example, non-transparency. The resin member 70 seals the light receiving element 20, the light emitting element 30, the switching elements 40a, 40b, and each metal wire on the insulating member 10. The resin member 70 is provided so as to cover the resin member 33.

[0027] Thus, the semiconductor device 1 has a structure in which the light receiving element 20, the light emitting element 30, the switching elements 40a and 40b are sealed in a resin package, and the control side terminals 50a, 50b, the output side terminals 60a and 60b are provided on the outer surface of the resin package.

[0028] The semiconductor device 1 further includes a metal reflector 19 provided on the surface of the insulating member 10. The metal reflector 19 is provided at a position close to the light receiving element 20. The metal reflector 19 is provided, for example, in the vicinity of the mount pad 17. Further, the metal reflector 19 is provided, for example, between the bonding pads 13a and 13b. The bonding pads 13a, 13b, and the metal reflector 19 are spaced apart from each other and are provided so as to be spaced apart from the mount pad 17.

[0029] The first separation distance D1 from the mount pad 17 to the metal reflector 19 is provided to be longer than, for example, the second separation distance D2 from the mount pad 17 to the bonding pad 13a. Also, the first separation distance D1 is provided to be longer than, for example, the third separation distance D3 from the mount pad 17 to the bonding pad 13b. That is, the metal reflector 19 is provided so as to be separated from the metal wires MW1 and MW2 in a plan view parallel to the surface of the insulating member 10. Thereby, in the step of sealing the light-emitting element 30 with the resin member 33 (see FIG. 4(c)), interference between the metal wires MW1 and MW2 and the laser light LL can be prevented.

[0030] Also, the metal reflector 19 is provided so as to be separated from the outer edge of the insulating member 10 in an inward direction in a plan view parallel to the surface of the insulating member 10. Thereby, it is possible to avoid the end face of the metal reflector 19 from being exposed to the side surface of the resin member 70.

[0031] In the semiconductor device 1, the resin member 70 is provided so as to be in contact with the insulating member 10 between the pads and at the outer edge of the insulating member 10. Thereby, the adhesion between the insulating member 10 and the resin member 70 is improved, and the reliability of the light-receiving element 20, the light-emitting element 30, and the switching elements 40a and 40b sealed by the resin member 70 can be improved. Also, it is possible to adopt a configuration in which metals other than the control-side terminals 50a, 50b, the output-side terminals 60a, and 60b are not exposed on the outer surface of the resin package. For example, in mounting using a connection member such as cream solder, it is possible to prevent the connection member from entering the resin package due to capillary action and the solder material from creeping up.

[0032] As shown in FIG. 2, the light-receiving element 20 includes a plurality of photodiodes 25 and a control circuit 27. The plurality of photodiodes 25 are connected in series. The photodiodes 25 are configured to detect the light of the light-emitting element 30. The control circuit 27 is, for example, a waveform shaping circuit. Also, the control circuit 27 may be a discharge circuit, a protection circuit, or the like. The output of the photodiodes 25 is output via the control circuit 27.

[0033] The source S of the switching element 40a is connected to the source S of the switching element 40b. The cathode-side output of the photodiode 25 is connected to the sources S of the switching elements 40a and 40b via the control circuit 27, for example. Also, the anode-side output of the photodiode 25 is connected to the gates G of the switching elements 40a and 40b via the control circuit 27, for example. The output-side terminal 60a is connected to the drain D of the switching element 40a, and the output-side terminal 60b is connected to the drain D of the switching element 40b.

[0034] Control signals for turning on and off the electrical conduction between the output-side terminal 60a and the output-side terminal 60b, for example, are input to the control-side terminals 50a and 50b. The light-emitting element 30 emits an optical signal corresponding to the control signal, and the light-receiving element 20 detects the optical signal emitted from the light-emitting element 30 and outputs a control signal corresponding to the optical signal to the switching elements 40a and 40b.

[0035] When the semiconductor device 1 is used to turn on and off, for example, a transmission line for a high-frequency signal, it is desirable to improve the passing characteristics of the high-frequency signal between the output-side terminal 60a and the output-side terminal 60b. In the semiconductor device 1, by reducing the thickness of the insulating member 10 in the Z direction, the impedance between the switching element 40a and the output-side terminal 60a can be reduced, and the impedance between the switching element 40b and the output-side terminal 60b can be reduced. Thereby, it becomes possible to improve the passing characteristics of the high-frequency signal between the output-side terminal 60a and the output-side terminal 60b.

[0036] Figs. 3(a) to (d) are schematic views showing the base member 100 of the semiconductor device 1 according to the embodiment. The base member 100 includes the insulating member 10, the bonding pads 13a and 13b, the mount pads 15a, 15b, and 17, the metal reflector 19, the control-side terminals 50a and 50b, and the output-side terminals 60a and 60b. The light-receiving element 20, the light-emitting element 30, and the switching elements 40a and 40b are mounted on the surface side of the base member 100 (see Fig. 1).

[0037] FIG. 3(a) is a plan view showing the surface side of the insulating member 10. The bonding pads 13a and 13b, the mount pads 15a, 15b, 17, and the metal reflector 19 are formed, for example, by patterning a copper foil provided on the surface of the insulating member 10. The bonding pads 13a and 13b, the mount pads 15a, 15b, 17, and the metal reflector 19 may have, for example, a laminated structure including a plurality of plating layers. Further, it is preferable to provide a gold (Au) layer on the outermost surface of the metal reflector 19 for oxidation prevention.

[0038] The bonding pads 13a and 13b are arranged in the Y direction. The mount pads 15a and 15b are arranged in the Y direction. The mount pad 17 is provided between the bonding pad 13a and the mount pad 15a, and between the bonding pad 13b and the mount pad 15b. Note that the embodiment is not limited to this arrangement.

[0039] The metal reflector 19 is provided between the bonding pads 13a and 13b. The metal reflector 19 is provided at a distance from the bonding pads 13a and 13b. The metal reflector 19 is, for example, larger than the spot diameter of the laser light LL used during the potting of the resin member 33 (see FIG. 4(c)). The size of the metal reflector 19 is, for example, 200 μm in the X and Y directions.

[0040] In order to miniaturize the semiconductor device 1, it is preferable to make the mutual separation distances of the bonding pads 13a, 13b, the mount pads 15a, 15b, and 17 as short as possible. The second separation distance D2 between the bonding pad 13a and the mount pad 17, and the third separation distance D3 between the bonding pad 13b and the mount pad 17 are, for example, the minimum line width when patterning the copper foil on the insulating member 10. The second separation distance D2 and the third separation distance D3 are, for example, 100 μm.

[0041] The fourth separation distance D4 between the bonding pad 13a and the metal reflector 19 is at least the same as the second separation distance D2. Also, the fifth separation distance D5 between the bonding pad 13b and the metal reflector 19 is at least the same as the third separation distance D3. In order to avoid interference between the metal wires MW1 and MW2 (see FIG. 1) and the laser light LL, it is preferable that the fourth separation distance D4 is longer than the second separation distance D2, and the fifth separation distance D5 is longer than the third separation distance D3.

[0042] Also, from the viewpoint of miniaturization of the semiconductor device 1, the distance in the X direction from the metal reflector 19 to the outer edge of the insulating member 10 is preferably longer than or the same as the distance in the X direction from each of the bonding pads 13a and 13b to the outer edge of the insulating member 10.

[0043] FIG. 3(b) is a cross-sectional view taken along the line A-A shown in FIG. 3(a). The insulating member 10 has, for example, a thickness T1 in the Z direction. The bonding pads 13a, 13b, the mount pads 15a, 15b, and 17 each have a thickness T2 in the Z direction. Also, the control-side terminals 50a, 50b, the output-side terminals 60a, 60b provided on the back surface of the insulating member 10 each have a thickness T3 in the Z direction. For example, from the viewpoints of simplification of the manufacturing process and stabilization of the manufacturing quality, it is preferable that T2 and T3 have substantially the same thickness and are thinner than T1.

[0044] The insulating member 10 is provided with via contacts 53 and 63. The via contacts 53 and 63 are provided, for example, in via holes that communicate from the back surface side to the front surface side of the insulating member 10. The via contacts 53 and 63 are formed, for example, by filling a metal such as copper into the via holes using a plating method.

[0045] The control-side terminal 50a is electrically connected to the bonding pad 13a by the via contact 53. The output-side terminal 60a is electrically connected to the mount pad 15a by the via contact 63. Similarly, the control-side terminals 50b and the output-side terminals 60b are also electrically connected to the bonding pads 13b and the mount pads 15b via via contacts.

[0046] Figure 3(c) is a cross-sectional view taken along the line B-B shown in Figure 3(a). The metal reflector 19 has the same thickness T2 in the Z direction as the mount pad 17. Also, the metal reflector 19 is electrically insulated from any of the bonding pads 13a, 13b, mount pads 15a, 15b, 17, control-side terminals 50a, 50b, output-side terminals 60a, and 60b. Although the embodiment is not limited to this example, from the viewpoint of improving high-frequency characteristics, the metal reflector 19 preferably has a floating potential.

[0047] Figure 3(d) is a plan view showing the control-side terminals 50a, 50b, output-side terminals 60a, and 60b provided on the back side of the insulating member 10. The control-side terminals 50a, 50b, output-side terminals 60a, and 60b are formed, for example, by patterning a copper foil provided on the back surface of the insulating member 10. The control-side terminal 50b and the output-side terminal 60b have the same thickness T3 in the Z direction as the control-side terminal 50a and the output-side terminal 60a. The control-side terminals 50a, 50b, output-side terminals 60a, and 60b may have a laminated structure in which a gold (Au) layer is provided on the surface, for example, for oxidation prevention.

[0048] The control-side terminals 50a and 50b are arranged, for example, in the Y direction. The output-side terminals 60a and 60b are arranged, for example, in the Y direction. The control-side terminal 50a and the output-side terminal 60a are arranged, for example, in the X direction. The control-side terminal 50b and the output-side terminal 60b are arranged, for example, in the X direction.

[0049] The control-side terminal 50a is provided so as to face the bonding pad 13a through the insulating member 10. The control-side terminal 50b is provided so as to face the bonding pad 13b through the insulating member 10.

[0050] The output-side terminal 60a is provided to face the mounting pad 15a via the insulating member 10. The output-side terminal 60b is provided to face the mounting pad 15b via the insulating member 10.

[0051] The thickness T1 of the insulating member 10 is preferably made thin so that, for example, the impedance between the switching element 40a and the output-side terminal 60a and the impedance between the switching element 40b and the output-side terminal 60b are reduced.

[0052] The bonding pads 13a and 13b are provided with a thickness capable of ensuring the bonding strength of, for example, the metal wires MW1 and MW2 (see FIG. 1). Therefore, the thickness T2 in the Z direction of the bonding pads 13a and 13b provided on the surface side of the insulating member 10 is preferably made thicker than a predetermined thickness capable of ensuring the bonding strength.

[0053] The respective thicknesses T3 of the control-side terminals 50a and 50b, and the output-side terminals 60a and 60b provided on the back surface side of the insulating member 10 are preferably the same as the thicknesses T2 of the bonding pads 13a and 13b, the mounting pads 15a and 15b, and 17, for example, in order to balance the stress applied to the insulating member 10. Here, "the same" includes not only strict coincidence but also substantially the same or substantially identical.

[0054] The thickness T1 of the insulating member 10 is preferably thinner than the combined thickness (T2 + T3) of the respective thicknesses T2 of the bonding pads 13a and 13b, the mounting pads 15a and 15b, and 17, and the respective thicknesses T3 of the control-side terminals 50a and 50b, and the output-side terminals 60a and 60b. Thereby, the impedance between the switching element 40a and the output-side terminal 60a and the impedance between the switching element 40b and the output-side terminal 60b can be reduced. The thickness T1 of the insulating member 10 is, for example, 50 μm. The thicknesses T2 and T3 are, for example, 30 μm each.

[0055] Next, with reference to FIGS. 4(a) to 5(b), a method for manufacturing the semiconductor device 1 will be described. FIGS. 4(a) to 5(b) are schematic diagrams showing the manufacturing process of the semiconductor device 1 according to the embodiment.

[0056] As shown in FIG. 4(a), a switching element 40a and a light receiving element 20 are mounted on a mounting pad 15a and a mounting pad 17 provided on the insulating member 10, respectively. The switching element 40a and the light receiving element 20 are placed on the mounting pad 15a and the mounting pad 17 via, for example, cream solder or a conductive paste, and fixed by reflow or curing. The switching element 40b is mounted on the mounting pad 15b at a portion not shown.

[0057] Furthermore, a light emitting element 30 is mounted on the light receiving element 20. The light emitting element 30 is joined to the light receiving element 20 via, for example, a connecting member 35. The light emitting element 30 emits light from the back surface facing the light receiving element 20 toward the light receiving element 20. The connecting member 35 is, for example, a transparent resin layer that transmits the emitted light of the light emitting element 30.

[0058] As shown in FIG. 4(b), the bonding pad 13a and the light emitting element 30 are electrically connected by a metal wire MW1 (see FIG. 2). Also, the light receiving element 20 and the switching element 40a are electrically connected by metal wires MW3 and MW4 (see FIG. 2). The metal wires MW1, MW3, and MW4 are connected onto the electrodes of the respective elements by, for example, ultrasonic bonding.

[0059] Also, at a portion not shown, the bonding pad 13b and the light emitting element 30, the light receiving element 20 and the switching element 40b, and the switching element 40a and the switching element 40b are also electrically connected via other metal wires (see FIG. 1).

[0060] As shown in FIG. 4(c), the resin member 33 is supplied onto the light-receiving element 20 to cover the light-emitting element 30. In FIG. 4(c), the bonding pads 13a and the metal wires MW1, MW3, and MW4 are omitted. The resin member 33 is, for example, a silicone resin.

[0061] The resin member 33 is supplied using a so-called potting device (not shown). The potting device includes, for example, a nozzle 80 and a laser sensor 90. The nozzle 80 ejects the resin member 33. The laser sensor 90 detects, for example, the displacement of the height (Z direction) of the surface of the insulating member 10 by the laser light LL.

[0062] In order to seal the light-emitting element 30 on the light-receiving element 20 using the resin member 33, it is desirable to precisely control the amount of the resin member 33 supplied from the nozzle 80. If the resin member 33 is supplied in an amount more than the appropriate amount, it flows out along the side surface of the light-receiving element 20. For this reason, the sealing of the light-receiving element 20 by the resin member 70 becomes incomplete, leading to a decrease in reliability. Also, if the resin member 33 is supplied in an amount less than the appropriate amount, the sealing of the light-emitting element 30 becomes incomplete, reducing the reliability.

[0063] The supply amount of the resin member 33 depends on the distance between the light-emitting element 30 and the tip of the nozzle 80. Therefore, in order to make the supply amount of the resin member 33 an appropriate amount, it is important to keep the distance from the surface of the insulating member 10 to the nozzle 80 constant. In this example, the reflection of the laser light LL irradiated on the metal reflector 19 is detected, and the displacement in the Z direction on the surface of the insulating member 10 is monitored. Further, by feeding back the displacement of the surface of the insulating member 10 to the position of the nozzle 80, the distance from the surface of the insulating member 10 to the nozzle 80 can be kept constant.

[0064] As shown in FIG. 5(a), the light-emitting element 30 is sealed by the resin member 33 on the light-receiving element 20. The resin member 33 is, for example, gel-like and relaxes the stress applied to the light-emitting element 30. Thereby, the reliability of the light-emitting element 30 is improved.

[0065] As shown in Fig. 5(b), the resin member 70 is molded on the surface side of the insulating member 10. The resin member 70 is, for example, an epoxy resin. The insulating member 10 and the resin member 70 accommodate, for example, the light receiving element 20, the light emitting element 30, the switching element 40a, and the switching element 40b as a resin package. The control side terminals 50a and 50b, and the output side terminals 60a and 60b are exposed, for example, on the bottom surface of the resin package.

[0066] In the manufacturing process shown in Figs. 4(a) to 5(b), an insulating member 10 having a sheet-like wide area is used to form a plurality of semiconductor devices 1 in a batch. Further, in the semiconductor device 1, in order to reduce the impedance between the output side terminals 60a and 60b, the thickness of the insulating member 10 in the Z direction is made thin. For this reason, the insulating member 10 is easily bent, and it is difficult to keep the height of its surface uniform. Further, it is difficult to contain a member that reflects the laser light LL in the thin insulating member 10. For this reason, even if the laser light LL is directly irradiated on the surface of the insulating member 10, the amount of reflection is small, and it is difficult to accurately monitor the displacement of the surface of the insulating member 10.

[0067] In the semiconductor device 1 according to the embodiment, by providing the metal reflector 19 on the surface of the insulating member 10, it becomes possible to accurately monitor the surface displacement. Further, by providing the metal reflector 19 in the vicinity of the mount pad 17, the positional accuracy of the nozzle 80 can be significantly improved. Thereby, it becomes possible to maintain an appropriate supply amount of the resin member 33, and the manufacturing yield of the semiconductor device 1 can be improved.

[0068] In addition, due to the influence of heat during the manufacturing process, for example, the insulation member 10 may be deformed by the temperature rise during the bonding process of the metal wires MW1 to MW7. In the semiconductor device 1 according to the embodiment, by providing the metal reflector 19 between the bonding pad 13a and the bonding pad 13b, local deformation of the insulation member 10 in the vicinity of the mount pad 17 can be suppressed. Thereby, the relative displacement in the Z direction between the metal reflector 19 and the mount pad 17 can be suppressed, and the positional accuracy of the nozzle 80 can be further improved.

[0069] FIG. 6 is a schematic diagram showing a semiconductor device 2 according to a modification of the embodiment. FIG. 6 is a plan view showing the arrangement on the surface side of the insulation member 10.

[0070] In this example, the metal reflector 19 is connected to the bonding pad 13b and is provided so as to be separated from the bonding pad 13a. That is, the bonding pad 13b and the metal reflector 19 are integrated. Such a configuration is effective, for example, when the space between the bonding pad 13a and the bonding pad 13b is narrow and the metal reflector 19 cannot be arranged separately from the bonding pads 13a and 13b. Also, the metal reflector 19 may be configured to be connected to the bonding pad 13a and separated from the bonding pad 13b.

[0071] As shown in FIG. 6, the metal wire MW2 is bonded between the metal reflector 19 and the via contact 53. When the separation distance Ls from the bonding position of the metal wire MW2 to the via contact 53 becomes long, the parasitic inductance therebetween increases and the frequency characteristics of the signal transmission path deteriorate.

[0072] For example, it is also possible to increase the separation distance Ls and irradiate laser light LL between the bonding position of the metal wire MW2 and the via contact 53. However, when the separation distance Ls is increased, the frequency characteristics of the signal transmission path between the control-side terminal 50b and the light-emitting element 30 deteriorate, and the signal frequency on the control side is restricted. Therefore, the metal wire MW2 is preferably bonded at a position close to the via contact 53.

[0073] Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and its equivalent scope.

Description of Reference Numerals

[0074] 1, 2... semiconductor devices, 10... insulating member, 13a, 13b... bonding pads, 15a, 15b, 17... mounting pads, 19... metal reflector, 20... light-receiving element, 23, 35, 43... connecting members, 25... photodiode, 27... control circuit, 30... light-emitting element, 33, 70... resin members, 40a, 40b... switching elements, 50a, 50b... control-side terminals, 53, 63... via contacts, 60a, 60b... output-side terminals, 80... nozzle, 90... laser sensor, 100... base member, LL... laser light, MW1, MW2, MW3, MW4, MW5, MW6, MW7... metal wires

Claims

1. An insulating member, A light receiving element mounted on the surface of the insulating member, A light emitting element mounted on the light receiving element and optically coupled to the light receiving element, A switching element arranged beside the light receiving element and electrically connected to the light receiving element on the surface of the insulating member, A first metal terminal provided on the back surface of the insulating member opposite to the surface and electrically connected to the light emitting element, A second metal terminal provided on the back surface of the insulating member and electrically connected to the switching element, A metal reflector provided near the light receiving element on the surface of the insulating member, A first resin member covering the light emitting element on the light receiving element, A second resin member covering the light receiving element, the light emitting element, the first resin member, the switching element and the metal reflector on the surface of the insulating member, A first mounting pad provided on the surface of the insulating member, A second mounting pad arranged beside the first mounting pad and spaced apart from the first mounting pad on the surface of the insulating member, A first bonding pad provided near the first mounting pad and spaced apart from the first mounting pad on the surface of the insulating member, A second bonding pad provided near the first mounting pad, arranged beside the first bonding pad and spaced apart from the first mounting pad and the first bonding pad on the surface of the insulating member, A first metal wire electrically connecting the first bonding pad and the light emitting element, A second metal wire electrically connecting the second bonding pad and the light emitting element, Another first metal terminal arranged beside the first metal terminal, spaced apart from the first metal terminal and electrically connected to the light emitting element on the back surface of the insulating member, comprising, the light-receiving element is mounted on the first mounting pad, the switching element is mounted on the second mounting pad, the first metal terminal is electrically connected to the first bonding pad, the other first metal terminal is electrically connected to the second bonding pad, the second metal terminal is electrically connected to the switching element via the second mounting pad, the metal reflector is provided between the first bonding pad and the second bonding pad, the metal reflector is provided at a distance from the first bonding pad, the second bonding pad, and the first mounting pad, a semiconductor device.

2. The semiconductor device according to claim 1, wherein the first mounting pad is provided between the second mounting pad, the first and the second bonding pads.

3. The semiconductor device according to claim 1 or 2, wherein a first separation distance from the first mounting pad to the metal reflector is longer than a second separation distance from the first mounting pad to the first bonding pad and longer than a third separation distance from the first mounting pad to the second bonding pad.

4. The semiconductor device according to any one of claims 1 to 3, wherein the metal reflector contains the same material as the first bonding pad and the second bonding pad.

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