Semiconductor light-emitting device and vehicle lamp

Abstract

To provide a semiconductor light emission device in which chromaticity unevenness is suppressed with a simple constitution, and a vehicular lighting fixture using the same.SOLUTION: A semiconductor light emission device (10) includes: a semiconductor light emission element (12) having a light emission region for emitting primary light; a wavelength conversion section (13) which is arranged on an upper part of the semiconductor light emission element (12) via an adhesive (15), and converts at least a part of the primary light to secondary light; and a first light volume adjusting section (14) arranged between the semiconductor light emission element (12) and the wavelength conversion section (13). The first light volume adjusting section (14) is arranged in a prescribed region containing a center of a light emission region, and a periphery of which is surrounded by the adhesive (15).SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device and a vehicle lamp.

Background Art

[0002] As one form of a semiconductor light-emitting device, a semiconductor light-emitting device using a phosphor is known. In a semiconductor light-emitting device using a phosphor, a semiconductor light-emitting element that emits light of a predetermined wavelength is combined with a phosphor capable of wavelength conversion, and the light emitted from the semiconductor light-emitting element (primary light) and the light whose wavelength is converted when the primary light collides with the phosphor (secondary light) are mixed and output.

[0003] Conventionally, as a document disclosing a technique related to a semiconductor light-emitting device using a phosphor, for example, a semiconductor light-emitting device disclosed in Patent Document 1 is known. The semiconductor light-emitting device disclosed in Patent Document 1 includes a light-emitting portion having a first main surface and a second main surface that is the opposite surface of the first main surface, a wavelength conversion portion provided on the first main surface side and containing a phosphor, and a chromaticity control portion provided between the light-emitting portion and the wavelength conversion portion and controlling the shape and dimensions of the wavelength conversion portion.

[0004] Also, a light-emitting device disclosed in Patent Document 2 is known. The light-emitting device disclosed in Patent Document 2 includes a light-emitting element having a light-emitting surface and an electrode formation surface on the opposite side of the light-emitting surface, and a wavelength conversion member having phosphor particles and a resin member, and has a first region disposed directly above the central portion of the light-emitting surface of the light-emitting element and a second region disposed on the outer periphery of the first region in a plan view. The thickness of the first region is thinner than the thickness of the second region, and the density of the phosphor particles in the resin member in the first region is higher than the density of the phosphor particles in the resin member in the second region.

[0005] Here, referring to FIGS. 5 and 6, the structure and operation of a semiconductor light-emitting device 100 using a phosphor according to the prior art will be described. The semiconductor light-emitting device 100 combines an LED (Light Emitting Diode) as a semiconductor light-emitting element that emits blue light and a yellow phosphor, and mixes the blue light and the yellow light wavelength-converted by the phosphor with the blue light to output white light.

[0006] As shown in FIG. 5, the semiconductor light-emitting device 100 includes a mounting substrate 11, a semiconductor light-emitting element 12, a wavelength conversion unit 13, and a resin 19. The semiconductor light-emitting element 12 is an LED that emits blue light, and the wavelength conversion unit 13 is a yellow phosphor. Electrodes 17-1 and 17-2 are formed on the upper surface of the mounting substrate 11, and electrodes 18-1 and 18-2 are formed on the back surface. The electrode 17-1 is connected to the pad 16-1 on the anode side of the semiconductor light-emitting element 12 by solder or an Au bump (not shown), and the electrode 17-2 is connected to the pad 16-2 on the cathode side of the semiconductor light-emitting element 12 by solder or an Au bump (not shown). The wavelength conversion unit 13 is adhered to the semiconductor light-emitting element 12 by a transparent adhesive 15. The electrode 17-1 is connected to the electrode 18-1 inside the mounting substrate 11, and the electrode 17-2 is connected to the electrode 18-2 inside the mounting substrate 11. The electrodes 18-1 and 18-2 are connected to electrodes of an external printed circuit board or the like (not shown), and power is supplied to the semiconductor light-emitting element 12 from the printed circuit board or the like through the electrodes 18-1 and 18-2, causing the semiconductor light-emitting element 12 to emit light. The resin 19 is disposed on the mounting substrate 11 and surrounds the semiconductor light-emitting element 12 and the wavelength conversion unit 13.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0008] By the way, the light emitted from an LED, which is generally used as a semiconductor light-emitting element of a semiconductor light-emitting device using a phosphor, not only travels straight along the optical axis in the vertical direction with respect to the light-emitting surface of the semiconductor light-emitting element, but also travels in various directions obliquely with respect to the optical axis. On the other hand, since the wavelength conversion unit 13 (phosphor) has a certain thickness, the optical path length when traveling inside the wavelength conversion unit 13 is different between the light traveling straight from the semiconductor light-emitting element 12 and the light traveling obliquely. That is, the optical path length is different between the light emitted from the central portion of the wavelength conversion unit 13 and the light emitted from the peripheral portion, and the optical path length of the light from the peripheral portion is longer than that of the light from the central portion.

[0009] The light emitted from the semiconductor light-emitting element 12 and traveling inside the wavelength conversion unit 13 has a higher probability of colliding with the fluorescent substance in the wavelength conversion unit 13 as the optical path length becomes longer. If the light from the semiconductor light-emitting element 12 is emitted uniformly over almost the entire surface of the element, the central portion of the wavelength conversion unit 13 will have a bluish tint, and the peripheral portion of the wavelength conversion unit 13 will have a more yellowish tint. That is, color unevenness occurs in the light output from the semiconductor light-emitting device. The arrows marked "blue" and "yellow" for the output light Lo in FIG. 5 conceptually show this color unevenness.

[0010] Here, for example, the light color of a vehicle headlight is defined as white according to the standards based on laws and regulations. Therefore, it is extremely important to suppress color unevenness in vehicle lighting fixtures. However, when color unevenness occurs as in the above semiconductor light-emitting device 100, there may be a case where the standards for the light color of the vehicle lighting fixture cannot be satisfied. Particularly in a monofocus optical system mainly using a lens instead of a reflector, the light in the vicinity directly above the semiconductor light-emitting device 100, that is, the light from the central portion of the wavelength conversion unit 13, is predominantly used, so the bluish tint becomes stronger, and there is a risk of deviating from the above standards in the blue direction.

[0011] Referring to FIG. 6, the deviation from the above standard will be described. FIG. 6 is a diagram extracted centering on the white part of the chromaticity diagram. Curve C3 indicates the limit value of the white standard, and the area inside curve C3 is the white region. On the other hand, curve C4 shows an example of the chromaticity characteristics of the blue semiconductor light-emitting device 100. In the region indicated by symbol B, curves C3 and C4 are close to each other, indicating that there is no margin in the blue direction. Thus, the deviation from the standard of the chromaticity diagram in the blue direction is sometimes referred to as "blue deviation".

[0012] The above blue deviation is not only caused by the difference in the optical path length in the wavelength conversion unit 13 from the light of the semiconductor light-emitting element 12 as described above, but may also be easily generated when the light generated by the semiconductor light-emitting element 12 is shifted in the blue direction due to manufacturing variations. Further, there may be a case where the chromaticity of the light color of the headlamp is set on the blue side of the white region, and this may also make the blue deviation likely to occur.

[0013] Therefore, there is a demand for realizing a semiconductor light-emitting device with suppressed blue deviation, more generally chromaticity unevenness. In this regard, both the semiconductor light-emitting device according to Patent Document 1 and the light-emitting device according to Patent Document 2 regard chromaticity unevenness as a problem. However, as a solution to this chromaticity unevenness, in the semiconductor light-emitting device according to Patent Document 1, the thickness of the phosphor is optimized, and in the light-emitting device according to Patent Document 2, the thickness of the phosphor and the density of the phosphor particles are changed according to the position facing the light-emitting element. That is, any of the conventional techniques requires some processing for the phosphor, and the manufacturing process has become complicated. Therefore, it is most convenient if chromaticity unevenness can be suppressed more simply.

[0014] Therefore, the present invention has been made in view of the above conventional problems, and an object thereof is to provide a semiconductor light-emitting device with a simple configuration and suppressed chromaticity unevenness, and a vehicle lamp using the same.

Means for Solving the Problems

[0015] In order to solve the above problems, a semiconductor light-emitting device of the present invention includes a semiconductor light-emitting element having a light-emitting region that emits primary light, a wavelength conversion unit that is disposed above the semiconductor light-emitting element via an adhesive and converts at least a part of the primary light into secondary light, and a first light quantity adjustment unit that is disposed between the semiconductor light-emitting element and the wavelength conversion unit. The first light quantity adjustment unit is disposed in a predetermined region including the center of the light-emitting region, and is surrounded by the adhesive around it wherein the area of the first light quantity adjustment unit is in the range of 10% or more and 90% or less of the area of the light emission region which is characterized in that.

[0016] In such a semiconductor light-emitting device of the present invention, since the primary light emitted from a predetermined region including the center of the light-emitting region of the semiconductor light-emitting element is attenuated before being input to the wavelength conversion unit, the primary light from the wavelength conversion unit corresponding to the predetermined region is attenuated. Therefore, the relationship between the primary light emitted from the central region of the wavelength conversion unit and the primary light emitted from the peripheral region of the wavelength conversion unit can be adjusted, that is, the light quantity can be made the same. By this, it is possible to provide a semiconductor light-emitting device with suppressed chromaticity unevenness and a vehicle lamp using the same with a simple configuration.

[0017] Further, in one aspect of the present invention, the first light quantity adjustment unit is characterized in that it is any one of a light reflection layer that reflects the primary light, a light absorption layer that absorbs the primary light, and a semi-transmissive film that partially transmits the primary light.

[0018] Further, in one aspect of the present invention, the light reflection layer is characterized in that it is any one of a metal film, a dielectric multilayer film, and an air layer and characterized in that.

[0019] Further, in one aspect of the present invention, it further includes a second light quantity adjustment unit disposed in a region above the wavelength conversion unit and corresponding to at least a part of the light emitted from the predetermined region.

[0020] In addition, in one aspect of the present invention, the second light quantity adjustment unit is a semi-transmissive film having a wavelength dependency that transmits the secondary light and attenuates the primary light.

[0021] In addition, in one aspect of the present invention, it further includes a white resin disposed so as to surround at least a part of the periphery of the semiconductor light emitting element and the wavelength conversion unit.

[0022] To solve the above problems, a semiconductor light emitting device according to another aspect of the present invention includes a semiconductor light emitting element having a light emitting region that emits primary light, and is disposed above the semiconductor light emitting element via an adhesive, and at least a part of the primary light is converted into secondary light. A semiconductor light emitting device comprising a wavelength conversion unit and a light quantity adjustment unit disposed above the wavelength conversion unit, wherein the light quantity adjustment unit is disposed in a region corresponding to at least a part of the light emitted from a predetermined region including the center of the light emitting region, and has a wavelength dependency that transmits the secondary light and attenuates the primary light the area of the light quantity adjustment unit is in the range of 10% or more and 90% or less of the area of the light emission region characterized in that.

[0023] To solve the above problems, a vehicle lamp according to the present invention uses any one of the above semiconductor light emitting devices.

Effect of the Invention

[0024] In the present invention, it is possible to provide a semiconductor light emitting device with suppressed chromaticity unevenness and a vehicle lamp using the same with a simple configuration.

Brief Description of the Drawings

[0025]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0026] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same or equivalent components, members, and processes shown in each drawing are denoted by the same reference numerals, and redundant explanations will be omitted as appropriate. In the following description, a semiconductor light-emitting device in the present invention will be exemplified and described as a semiconductor light-emitting device combining an LED as a semiconductor light-emitting element that emits blue light and a yellow phosphor. As an example, the semiconductor light-emitting device in the present embodiment is used for a lighting fixture mounted on a vehicle such as a motorcycle or an automobile, for example, a headlight.

[0027] (First Embodiment) With reference to FIGS. 1 to 3, the semiconductor light-emitting device 10 according to the present embodiment will be described. As shown in FIG. 1(a), the semiconductor light-emitting device 10 includes a mounting substrate 11, a semiconductor light-emitting element 12, a wavelength conversion unit 13, and a resin 19.

[0028] The semiconductor light-emitting element 12 is an LED that emits blue primary light as described above. As the semiconductor light-emitting element 12, for example, an LED having pads for an anode and a cathode on the circuit surface side and reflecting the generated light to the growth substrate side and outputting light from the growth substrate side can be used. In the semiconductor light-emitting device 10, such a semiconductor light-emitting element 12 is flip-chip mounted with the pads for the anode and the cathode facing down. However, the structure and mounting form of the semiconductor light-emitting element 12 are not limited to this, and other conventionally known forms may be used.

[0029] The wavelength conversion unit 13 is, for example, a plate-shaped member in which phosphor particles are dispersed in a medium. The material constituting the medium of the wavelength conversion unit 13 is a material that transmits primary light and secondary light, and examples thereof include silicone resin and glass. The wavelength conversion unit 13 according to the present embodiment is a phosphor that can be excited by the incident blue primary light to emit yellow secondary light. For example, it is produced by dispersing yellow phosphor particles in a resin. As a specific example of the phosphor material used in the semiconductor light-emitting device 10, a YAG (Yttrium Aluminum Garnet) phosphor that is excited by blue light to emit yellow light can be used. The YAG phosphor is preferable because a ceramic phosphor can be obtained by sintering a ceramic substrate made of powder. The thickness in the optical axis direction of the wavelength conversion unit 13 is a uniform thickness, but it may have portions with different thicknesses in consideration of more effective suppression of chromaticity unevenness and the like. The wavelength conversion unit 13 is adhered to the semiconductor light-emitting element 12 by an adhesive 15 that is transparent to primary light and secondary light.

[0030] The mounting substrate 11 is a member for mounting the semiconductor light-emitting device 10 on a printed circuit board (not shown) or the like, and may have a function of an interposer such as changing the pin pitch. The material constituting the mounting substrate 11 is not particularly limited, and conventionally known materials and structures such as SiC (silicon carbide), a wiring substrate, a ceramic substrate, a composite substrate in which an insulating layer is formed on a metal plate, and a flexible substrate can be used.

[0031] On the upper surface of the mounting substrate 11, electrodes 17-1 and 17-2 are formed, and on the lower surface, electrodes 18-1 and 18-2 are formed. The electrode 17-1 is connected to the electrode 18-1 inside the mounting substrate 11, and the electrode 17-2 is connected to the electrode 18-2 inside the mounting substrate 11. The electrode 17-1 is connected to the pad 16-1 on the anode side of the semiconductor light-emitting element 12 by solder or Au bumps (not shown), and the electrode 17-2 is connected to the pad 16-2 on the cathode side of the semiconductor light-emitting element 12 by solder or Au bumps (not shown). The electrodes 18-1 and 18-2 are connected to an external printed circuit board or the like (not shown), and power is supplied to the semiconductor light-emitting element 12 from the printed circuit board or the like through the electrodes 18-1 and 18-2, causing the semiconductor light-emitting element 12 to emit light.

[0032] The resin 19 is disposed on the mounting substrate 11 and surrounds at least a part of the periphery of the semiconductor light-emitting element 12 and the wavelength conversion unit 13. The resin 19 has a function as a reflecting member that reflects the primary light emitted from the semiconductor light-emitting element 12 and the secondary light emitted from the wavelength conversion unit 13 in the direction of the wavelength conversion unit 13, and improves the efficiency of the output light Lo output from the semiconductor light-emitting device 10. Therefore, the resin 19 is preferably a white resin with a high reflectivity. More specifically, an organic material such as a silicone resin or an epoxy resin can be used as the resin 19.

[0033] The light quantity adjustment unit 14 has a function of attenuating the primary light emitted from the semiconductor light-emitting element 12. The light quantity adjustment unit 14 preferably has a wavelength dependency of attenuating the primary light and transmitting the secondary light without attenuation. The light quantity adjustment unit 14 can be any one of a light reflection layer that reflects the primary light, a light absorption layer that absorbs the primary light, and a semi-transmissive film that partially transmits the primary light. The light reflection layer can be any one of a metal film, a dielectric multilayer film, and an air layer. Further, the light absorption layer can be formed of, for example, blue particles, a resin in which a blue dye or pigment is dispersed. Alternatively, blue particles may be dispersed in a part of the region of the adhesive 15 for formation.

[0034] Figure 1(b) shows the configuration of the peripheral portion of the light quantity adjustment unit 14. As shown in Figure 1(b), the light quantity adjustment unit 14 according to the present embodiment is surrounded by an adhesive 15 that bonds the semiconductor light emitting element 12 and the wavelength conversion unit 13. Of course, it is not necessary to dispose the adhesive 15 over the entire periphery of the light quantity adjustment unit 14, and the light quantity adjustment unit 14 and the adhesive 15 may be separated. Also, although it varies depending on the specific implementation form, as an example, the thickness of the light quantity adjustment unit 14 is about 1 μm to 100 μm, and the ratio of the area of the light quantity adjustment unit 14 to the light emission area of the semiconductor light emitting element 12 can be about 10% to 90% as an example. When the area ratio of the light quantity adjustment unit 14 is less than 10% or more than 90%, the reduction of color unevenness due to the attenuation of the primary light by the light quantity adjustment unit 14 becomes insufficient. The semiconductor light emitting device 10 configured as described above outputs white output light Lo.

[0035] Next, with reference to FIGS. 2 and 3, the operation of the semiconductor light emitting device 10 will be described. FIG. 2 is a diagram conceptually showing the intensities of blue light and yellow light included in the output light Lo output from the semiconductor light emitting device 10 by the lengths of the arrows. Compared with the semiconductor light emitting device 100 according to the prior art shown in FIG. 5, it can be seen that the intensity of blue light in the output light Lo output from a region within a certain range including the center of the wavelength conversion unit 13 of the semiconductor light emitting device 10 is suppressed and approaches the intensity of blue light in the peripheral portion. As a result, the chromaticity of the output light Lo output from the wavelength conversion unit 13 is made uniform.

[0036] Here, as described above, the resin 19 has a function of reflecting the light emitted from the semiconductor light emitting element 12 or the wavelength conversion unit 13 and making it a part of the output light Lo. However, according to such a configuration, it is assumed that the chromaticity becomes more yellowish in the peripheral portion of the wavelength conversion unit 13. Since the semiconductor light emitting device 10 according to the present embodiment can be adjusted including such an additional phenomenon, it has a higher superiority.

[0037] FIG. 3 is a graph showing the relationship between the angle of light output from the semiconductor light-emitting device 10 and the chromaticity unevenness. The angle here is the angle measured from the optical axis passing through the center of the wavelength conversion unit 13, and the larger this angle is, the closer it is to the peripheral portion of the wavelength conversion unit 13. The vertical axis represents the chromaticity unevenness. Curve C1 shows the chromaticity unevenness of the semiconductor light-emitting device 100 according to the prior art, and curve C2 represents the chromaticity unevenness of the semiconductor light-emitting device 10 according to the present embodiment. As is clear from comparing curve C1 and C2, it can be seen that in the semiconductor light-emitting device 10, the chromaticity unevenness in the peripheral portion is particularly improved as compared with the semiconductor light-emitting device 100.

[0038] Here, the manufacturing method of the semiconductor light-emitting device 10 will be briefly described. First, the semiconductor light-emitting element 12 and the wavelength conversion unit 13 are prepared. Next, a light quantity adjustment unit 14 is formed on the upper surface of the semiconductor light-emitting element 12 or the lower surface of the wavelength conversion unit 13. When, for example, a metal film is used as the light quantity adjustment unit 14, the metal film is vapor-deposited on a predetermined region of the upper surface of the semiconductor light-emitting element 12 or a predetermined region of the lower surface of the wavelength conversion unit 13.

[0039] Next, an adhesive is applied to the region of the upper surface of the semiconductor light-emitting element 12 excluding the region of the light quantity adjustment unit 14, or the region of the lower surface of the wavelength conversion unit 13 excluding the region of the light quantity adjustment unit 14, and the semiconductor light-emitting element 12 and the wavelength conversion unit 13 are adhered.

[0040] Next, the structure of the adhered semiconductor light-emitting element 12 and wavelength conversion unit 13 is fixed to the mounting substrate 11 on which electrodes 17-1, 17-2, 18-1, and 18-2 are previously formed. That is, the pad 16-1 on the anode side of the semiconductor light-emitting element 12 is connected to the electrode 17-1, and the pad 16-2 on the cathode side of the semiconductor light-emitting element 12 is connected to the electrode 17-2 by solder or Au bumps (not shown). The semiconductor light-emitting device 10 is manufactured by the above steps.

[0041] When, for example, an air layer is used as the light quantity adjustment layer 14, an opening may be formed in the sheet-like adhesive, and the sheet-like adhesive may be disposed between the upper surface of the semiconductor light emitting element 12 and the lower surface of the wavelength conversion unit 13 to bond the two. Further, the primary light emitted from the semiconductor light emitting element 12 is not limited to blue light, and near ultraviolet light, ultraviolet light, or the like may be used. Further, the secondary light wavelength-converted by the wavelength conversion unit 13 is not limited to yellow light as long as white light can be irradiated by color mixing with the primary light. For example, when blue light is used as the primary light, the wavelength conversion unit 13 may contain a red phosphor and a green phosphor, and white may be obtained by color mixing the blue light of the primary light, the red light, and the green light of the secondary light.

[0042] As described in detail above, according to the semiconductor light emitting element and the vehicle lamp using the same according to the present embodiment, since the primary light emitted from a predetermined region including the center of the light emission region of the semiconductor light emitting element 10 is attenuated before being input to the wavelength conversion unit 13, the primary light from the wavelength conversion unit corresponding to the predetermined region is attenuated. Therefore, the relationship between the primary light emitted from the central region of the wavelength conversion unit and the primary light emitted from the peripheral region of the wavelength conversion unit can be adjusted, that is, the light amounts can be made the same. As a result, it is possible to suppress the chromaticity unevenness of the output light Lo output from the wavelength conversion unit 13, that is, to equalize the chromaticity of the output light Lo. Further, since the wavelength conversion unit 13 according to the present embodiment does not particularly require processing, the above-described effects can be exhibited with a simple configuration.

[0043] Furthermore, the semiconductor light emitting device 10 according to the present embodiment can also cope with an increase in chromaticity unevenness in the peripheral portion of the wavelength conversion unit 13 due to reflection of secondary light by the resin 19.

[0044] (Second Embodiment) With reference to FIG. 4, the semiconductor light emitting device 10A according to the present embodiment will be described. The semiconductor light emitting device 10A is a form in which a light quantity adjustment unit 20 as a second light quantity adjustment unit is further provided with respect to the semiconductor light emitting device 10. Therefore, the same components as those of the semiconductor light emitting device 10 are denoted by the same reference numerals, and redundant description is omitted.

[0045] As shown in Fig. 4(a), in the semiconductor light-emitting device 10A, a light quantity adjusting unit 20 is disposed on the upper surface of the wavelength conversion unit 13 (phosphor). The region where the light quantity adjusting unit 20 is disposed is a region including at least a part of the light emitted from the light quantity adjusting unit 14. In other words, it is a region including at least a part of a predetermined region of the light emission region of the semiconductor light-emitting element 12. The light quantity adjusting unit 20 preferably has a wavelength dependency of transmitting yellow light (secondary light) without attenuation and attenuating blue light (primary light). As the light quantity adjusting unit 20, a semi-transmissive film, for example, a dielectric multilayer film can be used. Although it also varies depending on the specific implementation form, as an example, the thickness of the light quantity adjusting unit 20 is about 0.1 μm to 10 μm, and the ratio of the area of the light quantity adjusting unit 20 to the area of the light emission region of the semiconductor light-emitting element 12 can be about 10% to 90% as an example.

[0046] Fig. 4(b) is a plan view of the semiconductor light-emitting device 10A viewed from above. As shown in Fig. 4(b), the light quantity adjusting unit 20 is disposed in a predetermined region near the center of the wavelength conversion unit 13. Of course, the arrangement position of the light quantity adjusting unit 20 may be an appropriate position on the wavelength conversion unit 13 according to the arrangement of the light emission region of the semiconductor light-emitting element 12 and the like.

[0047] The manufacturing method of the semiconductor light-emitting device 10A can be carried out according to the manufacturing method of the semiconductor light-emitting device 10 described above, but a step of forming the light quantity adjusting unit 20 on the upper surface of the wavelength conversion unit 13, for example, with a dielectric multilayer film, is added.

[0048] According to the semiconductor light-emitting device 10A configured as described above, in addition to the light quantity adjusting unit 14 as the first light quantity adjusting unit, a light quantity adjusting unit 20 as the second light quantity adjusting unit is provided. Therefore, in addition to the effects exhibited by the semiconductor light-emitting device 10 according to the above embodiment, an effect that the light quantity adjustment can be performed more precisely is exhibited.

[0049] Here, in this embodiment, a form in which the light quantity adjusting unit 20 is further provided in addition to the light quantity adjusting unit 14 as the first light quantity adjusting unit has been exemplified and described. However, the present invention is not limited to this, and a form in which only the light quantity adjusting unit 20 is provided may also be used.

[0050] In addition, in the present embodiment, the form in which the light quantity adjustment unit 20 that attenuates the primary light is provided at the central portion of the upper surface of the wavelength conversion unit 13 has been exemplified and described, but the present invention is not limited thereto. A light quantity adjustment unit that attenuates the secondary light may be disposed at the peripheral portion of the upper surface of the wavelength conversion unit 13, for example, a semi-transmissive film formed of a dielectric multilayer film or the like. Further, a form in which a light quantity adjustment unit that attenuates the primary light is provided at the central portion of the upper surface of the wavelength conversion unit 13 and a light quantity adjustment unit that attenuates the secondary light is provided around it may also be adopted.

[0051] In addition, in each of the above embodiments, a semiconductor light-emitting device that outputs white light by mixing primary light and secondary light, which combines an LED that emits blue light and a yellow phosphor, has been exemplified and described. However, the present invention is not limited thereto, and a form in which a plurality of phosphor materials are provided to emit secondary light of a plurality of colors and white light is output by mixing the secondary lights, for example, a form in which an LED that emits purple light and red, green, and blue phosphors are combined may also be adopted.

[0052] Furthermore, in each of the above embodiments, white light has been exemplified and described as the light output from the semiconductor light-emitting device, but other monochromatic light may also be used, or a color other than white obtained by mixing a plurality of colors may also be used.

Description of Reference Numerals

[0053] 10, 100... Semiconductor light-emitting device 11... Mounting substrate 12... Semiconductor light-emitting element 13... Wavelength conversion unit 14... Light quantity adjustment unit 15... Adhesive 16-1, 16-2... Pads 17-1, 17-2... Electrodes 18-1, 18-2... Electrodes 19... Resin 20... Light quantity adjustment unit Lo... Output light

Claims

1. A semiconductor light-emitting device including a light-emitting region that emits primary light, a wavelength conversion unit disposed above the semiconductor light-emitting device via an adhesive and converting at least a part of the primary light into secondary light, and a first light quantity adjustment unit disposed between the semiconductor light-emitting device and the wavelength conversion unit, wherein the first light quantity adjustment unit is disposed in a predetermined region including the center of the light-emitting region and is surrounded by the adhesive around it, and the area of the first light quantity adjustment unit is in the range of 10% or more and 90% or less of the area of the light-emitting region. A semiconductor light-emitting device characterized by this.

2. The semiconductor light-emitting device according to Claim 1, wherein the first light quantity adjustment unit is any one of a light reflection layer that reflects the primary light, a light absorption layer that absorbs the primary light, and a semi-transmissive film that partially transmits the primary light. A semiconductor light-emitting device characterized by this.

3. The semiconductor light-emitting device according to Claim 2, wherein the light reflection layer is any one of a metal film, a dielectric multilayer film, and an air layer. A semiconductor light-emitting device characterized by this.

4. The semiconductor light-emitting device according to any one of Claims 1 to 3, further including a second light quantity adjustment unit disposed in a region above the wavelength conversion unit and corresponding to at least a part of the light emitted from the predetermined region. A semiconductor light-emitting device characterized by this.

5. The semiconductor light-emitting device according to Claim 4, wherein the second light quantity adjustment unit is a semi-transmissive film having a wavelength dependency that transmits the secondary light and attenuates the primary light. A semiconductor light-emitting device characterized by this.

6. The semiconductor light-emitting device according to any one of Claims 1 to 5, further including a white resin disposed so as to surround at least a part of the periphery of the semiconductor light-emitting device and the wavelength conversion unit. A semiconductor light-emitting device characterized by this.

7. A semiconductor light-emitting device including a light-emitting region that emits primary light, a wavelength conversion unit disposed above the semiconductor light-emitting device via an adhesive and converting at least a part of the primary light into secondary light, and a light quantity adjustment unit disposed above the wavelength conversion unit, wherein the light quantity adjustment unit is disposed in a region corresponding to at least a part of the light emitted from a predetermined region including the center of the light-emitting region, has a wavelength dependency that transmits the secondary light and attenuates the primary light, The semiconductor light-emitting device is characterized in that the area of the light quantity adjusting portion is in the range of 10% or more and 90% or less of the area of the light emission region.

8. A vehicle lamp using the semiconductor light-emitting device according to any one of Claims 1 to 7.

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