Semiconductor substrate, method and apparatus for manufacturing the same, method and apparatus for manufacturing semiconductor device

JP7703021B2Active Publication Date: 2025-07-04KYOCERA CORP
5 Cites 0 Cited by

Patent Information

Application Number
JP2023515443
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-04-20
Filing Date
2022-04-14
Publication Date
2025-07-04
Estimated Expiration
2042-04-14

Smart Images

  • Figure 0007703021000001
    Figure 0007703021000001
  • Figure 0007703021000002
    Figure 0007703021000002
  • Figure 0007703021000003
    Figure 0007703021000003
Patent Text Reader

Abstract

The present invention comprises a principal substrate (1), a seed part (SD) that is positioned above the principal substrate, and first and second semiconductor parts (8F, 8S) that are aligned in a first direction (the Y direction). The first and second semiconductor parts contact the seed part (SD), and the first direction (the Y direction) is the longitudinal direction of the seed part. A void part (VD) is positioned between the principal substrate and the first and second semiconductor parts.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Semiconductor substrate, semiconductor substrate manufacturing method, and electronic device

    JP2009239270A

  • Semiconductor element manufacturing method, insulated gate field effect transistor, insulated gate field effect transistor manufacturing method, semiconductor light-emitting element manufacturing method and solar cell manufacturing method

    JP2014150211A

  • III-N Epitaxial Device Structure on a Self-Supporting Silicon Mesa

    JP2017535051A

  • Insulative gate type field-effect transistor

    JP2018032863A

  • Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate

    US20080054292A1