Etching method

Abstract

An embodiment of the present application discloses an etching method including: preparing a wafer having a photoresist layer on a first side thereof; placing the wafer in an etching chamber, the etching chamber having a bias power supply for outputting a bias signal; forming a plasma in the etching chamber; and adjusting the power of the bias power supply to drive the movement of the plasma by the bias signal output from the bias power supply to etch the photoresist layer. When etching using plasma, different powers of the bias power supply will result in different ratios between the etching rate parallel to the first side of the wafer of the plasma driven by the bias signal and the etching rate perpendicular to the first side of the wafer, so that the etching of the photoresist layer by the plasma can be controlled by adjusting the power of the bias power supply, which can be helpful to etch the photoresist layer into a specific shape, and further makes the etching method helpful to etch the photoresist layer into a specific shape.

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