Method for manufacturing heteroepitaxial film

Abstract

The present invention provides a method for forming a heteroepitaxial film, wherein a 3C-SiC single crystal film is heteroepitaxially grown on a single crystal Si substrate, and is subsequently separated therefrom. This method for forming a heteroepitaxial film comprises: a first step in which a natural oxide film on the surface of a single crystal Si substrate is removed by means of hydrogen baking in a low pressure CVD system; a second step in which nucleation of SiC is carried out at 1,333 Pa or less and 300-950°C, while supplying a source gas that contains carbon and silicon; a third step in which a 3C-SiC single crystal film is formed at 1,333 Pa or less and not less than 800°C but less than 1200°C, while forming a void immediately below the 3C-SiC single crystal film; and a fourth step in which a heteroepitaxial film is formed by separating the 3C-SiC single crystal film by means of the void. Consequently, the present invention provides a method for efficiently obtaining a thin heteroepitaxial film with less material loss, while causing less damage to a device.

Images