Substrate processing apparatus, substrate processing system, and operation method

Abstract

To provide a technique for enabling an electron generator to be easily exchanged.SOLUTION: A disclosed substrate processing apparatus includes a chamber, an electron generator, a holder, and one or more power supply sources. The electron generator includes a substrate, a plurality of electron emission elements, and a plurality of first contact electrodes. The holder is configured to detachably hold the electron generator in the chamber. The holder includes a ring body and a plurality of second contact electrodes. One or more power supply sources are electrically connected to the electron generator through the holder. One or more power supply sources are electrically connected to the corresponding electron emission element out of the plurality of electron emission devices via the corresponding second contact electrode out of the plurality of second contact electrodes and the corresponding first contact electrode out of the plurality of first contact electrodes.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a substrate processing apparatus, a substrate processing system, and an operation method.

Background Art

[0002] A substrate processing apparatus having an electron generator is used in processing a substrate. In such a substrate processing apparatus, electrons generated by the electron generator attach to gas molecules to generate negative ions. Alternatively, gas molecules are dissociated by the electrons generated by the electron generator to generate positive ions. The substrate is processed by the generated ions.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for making an electron generator easily replaceable.

Means for Solving the Problems

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a substrate support, a gas supply unit, an electron generator, a holder, and one or more power supplies. The substrate support is provided in the chamber. The gas supply unit is configured to supply gas into the chamber. The holder has a ring shape and is configured to removably hold the electron generator in the chamber. The one or more power supplies are electrically connected to the electron generator via the holder. The electron generator includes a substrate, a plurality of electron emission elements, and a plurality of first contact electrodes. The plurality of electron emission elements are provided on one main surface of the substrate. The plurality of first contact electrodes are provided at the peripheral portion of the one main surface. The holder includes a ring body and a plurality of second contact electrodes. The ring body has a ring shape. The plurality of second contact electrodes are provided on the ring body. The holder holds the electron generator in a state where the plurality of electron emission elements are directed toward the space in the chamber and the plurality of first contact electrodes are in contact with the plurality of second contact electrodes respectively. The one or more power supplies are electrically connected to the corresponding electron emission element among the plurality of electron emission elements via the corresponding second contact electrode among the plurality of second contact electrodes and the corresponding first contact electrode among the plurality of first contact electrodes.

Advantages of the Invention

[0006] According to one exemplary embodiment, it becomes possible to easily replace the electron generator.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, various exemplary embodiments will be described.

[0009] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a substrate support, a gas supply unit, an electron generator, a holder, and one or more power supplies. The substrate support is provided within the chamber. The gas supply unit is configured to supply gas into the chamber. The holder has a ring shape and is configured to removably hold the electron generator within the chamber. The one or more power supplies are electrically connected to the electron generator via the holder. The electron generator includes a substrate, a plurality of electron emission elements, and a plurality of first contact electrodes. The plurality of electron emission elements are provided on one main surface of the substrate. The plurality of first contact electrodes are provided at the peripheral portion of the one main surface. The holder includes a ring body and a plurality of second contact electrodes. The ring body has a ring shape. The plurality of second contact electrodes are provided on the ring body. The holder holds the electron generator in a state where the plurality of electron emission elements are directed toward the space within the chamber and the plurality of first contact electrodes are in contact with the plurality of second contact electrodes respectively. The one or more power supplies are electrically connected to the corresponding electron emission element among the plurality of electron emission elements via the corresponding second contact electrode among the plurality of second contact electrodes and the corresponding first contact electrode among the plurality of first contact electrodes.

[0010] In the above embodiment, the electron generator is removably held by the holder within the chamber. Therefore, the electron generator can be easily removed within the chamber and can be easily carried out of the chamber. Further, by holding the electron generator by the holder within the chamber, an electrical connection between the electron generator and the one or more power supplies is easily formed. Therefore, the electron generator can be easily attached within the chamber. Thus, according to the above embodiment, the electron generator can be easily replaced.

[0011] In one exemplary embodiment, the holder may include an outer edge portion and an inner edge portion having a step with respect to the outer edge portion. The plurality of second contact electrodes are provided at least on the inner edge portion. The electron generator is disposed on the inner edge portion of the holder and inside the outer edge portion.

[0012] In one exemplary embodiment, each of the plurality of second contact electrodes may include a convex portion that contacts a corresponding first contact electrode among the plurality of first contact electrodes. According to this embodiment, the certainty of the electrical connection between each of the plurality of second contact electrodes and the corresponding first contact electrode is enhanced.

[0013] In one exemplary embodiment, the plurality of first contact electrodes and the plurality of second contact electrodes may be arranged along the circumferential direction.

[0014] In one exemplary embodiment, the ring body may be formed of an insulating material.

[0015] In one exemplary embodiment, the substrate processing apparatus may include a plurality of power supplies as one or more power supplies. Each of the plurality of power supplies is electrically connected to one or more corresponding electron emission elements among the plurality of electron emission elements. According to this embodiment, the voltages applied to the plurality of electron emission element groups formed by the plurality of electron emission elements can be individually controlled.

[0016] In one exemplary embodiment, the electron generator may include a plurality of first electrodes and a plurality of second electrodes. The plurality of first electrodes extend along a first direction on one main surface of the substrate and are arranged along a second direction orthogonal to the first direction. The plurality of second electrodes extend along the second direction and are arranged along the first direction. The plurality of second electrodes are provided such that an insulating film is interposed between the plurality of first electrodes and the plurality of second electrodes. A plurality of regions where the plurality of first electrodes and the plurality of second electrodes overlap constitute a plurality of electron emission elements. The plurality of first electrodes and the plurality of second electrodes constitute a plurality of first contact electrodes at the peripheral portion. In this embodiment, the substrate processing apparatus may further include a switching unit and a driver. The driver is configured to adjust the voltage from a first power source included in one or more power sources and apply it to the plurality of first electrodes. The switching unit is configured to sequentially apply the voltage from a second power source included in one or more power sources to the plurality of second electrodes.

[0017] In one exemplary embodiment, the substrate processing apparatus may further include a first actuator. The first actuator is configured to move the holder up and down in the chamber. The holder may be configured to hold the electron generator between the top of the chamber and the holder.

[0018] In one exemplary embodiment, the substrate processing apparatus may further include a plurality of electrode pins. The plurality of electrode pins are electrically connected to one or more power sources and are configured to elastically contact the plurality of second contact electrodes.

[0019] In one exemplary embodiment, the top of the chamber may be configured to hold the electron generator by electrostatic attraction.

[0020] In one exemplary embodiment, the top of the chamber may provide a flow path formed such that a refrigerant flows therein.

[0021] In one exemplary embodiment, the substrate processing apparatus may further include a plurality of lift pins, a second actuator, and a control unit. The plurality of lift pins are configured to support a substrate above the substrate support portion. The second actuator is configured to move the plurality of lift pins up and down with respect to the upper surface of the substrate support portion. The control unit is configured to control the first actuator and the second actuator so as to transfer the electron generator between the holder and the plurality of lift pins.

[0022] In another exemplary embodiment, a substrate processing system is provided. The substrate processing system includes the above-described substrate processing apparatus and a transfer device. The transfer device includes an arm that can enter the chamber and is provided outside the chamber. The control unit is configured to control the second actuator and the transfer device so as to transfer the electron generator between the arm and the plurality of lift pins within the chamber.

[0023] In yet another exemplary embodiment, an operation method of the above-described substrate processing system is provided. The operation method includes a step of moving the holder downward together with the electron generator using the first actuator. The operation method further includes a step of transferring the electron generator from the holder to the plurality of lift pins by moving the plurality of lift pins upward using the second actuator. The operation method further includes a step of entering the arm into the chamber. The operation method further includes a step of transferring the electron generator from the plurality of lift pins to the arm by moving the plurality of lift pins downward using the second actuator. The operation method further includes a step of carrying out the electron generator from the inside of the chamber by moving the arm from the inside to the outside of the chamber.

[0024] In one exemplary embodiment, the operation method further includes the step of moving the holder downward using the first actuator. The operation method further includes the step of moving an arm supporting the electron generator into the chamber. The operation method further includes the step of transferring the electron generator from the arm to a plurality of lift pins by moving the plurality of lift pins upward using the second actuator. The operation method further includes the step of transferring the electron generator from the plurality of lift pins to the holder by moving the holder upward using the first actuator. The operation method further includes the step of holding the electron generator by the holder.

[0025] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0026] FIG. 1 is a diagram showing a substrate processing system according to one exemplary embodiment. The substrate processing system PS shown in FIG. 1 includes process modules PM1 to PM6, a transfer module TM, and a control unit MC.

[0027] The substrate processing system PS may further include bases 2a to 2d, containers 4a to 4d, a loader module LM, an aligner AN, and load lock modules LL1 and LL2. Note that the number of bases, the number of containers, and the number of load lock modules in the substrate processing system PS can be any number of one or more. Also, the number of process modules in the substrate processing system PS can be any number of one or more.

[0028] The bases 2a to 2d are arranged along one edge of the loader module LM. The containers 4a to 4d are respectively mounted on the bases 2a to 2d. Each of the containers 4a to 4d is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers 4a to 4d is configured to accommodate a substrate W therein. Each of the containers 4a to 4d may be configured to accommodate an electron generator described later.

[0029] The loader module LM has a chamber. The pressure inside the chamber of the loader module LM is set to atmospheric pressure. The loader module LM has a transfer device TU1. The transfer device TU1 is, for example, a transfer robot and is controlled by a control unit MC. The transfer device TU1 is configured to transfer the substrate W through the chamber of the loader module LM. The transfer device TU1 can transfer the substrate W between each of the containers 4a to 4d and the aligner AN, between the aligner AN and each of the load lock modules LL1 and LL2, and between each of the load lock modules LL1 and LL2 and each of the containers 4a to 4d. Further, the transfer device TU1 may be configured to transfer an electron generator. The aligner AN is connected to the loader module LM.

[0030] The aligner AN is configured to adjust (calibrate the position) of the substrate W. Further, the aligner AN may be configured to adjust (calibrate the position) of the electron generator.

[0031] Each of the load lock modules LL1 and LL2 is provided between the loader module LM and the transfer module TM. Each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber. Each of the load lock modules LL1 and LL2 is connected to the loader module LM via a gate valve. Also, each of the load lock modules LL1 and LL2 is connected to the transfer module TM via a gate valve.

[0032] The transfer module TM has a transfer chamber TC that can be depressurized. The transfer module TM has a transfer device TU2. The transfer device TU2 is, for example, a transfer robot and is controlled by a control unit MC. The transfer device TU2 includes an arm that can enter each chamber of the process modules PM1 to PM6. The transfer device TU2 is configured to transfer the substrate W supported by the arm through the transfer chamber TC. The transfer device TU2 can transfer the substrate W between each of the load lock modules LL1 and LL2 and each of the process modules PM1 to PM6, and between any two of the process modules PM1 to PM6. Further, the transfer device TU2 may be configured to transfer an electron generator supported by the arm.

[0033] Each of the process modules PM1 to PM6 is connected to the transfer module TM via a gate valve. Each of the process modules PM1 to PM6 is a device configured to perform dedicated substrate processing. At least one of the process modules PM1 to PM6 is a substrate processing apparatus according to the exemplary embodiment described below.

[0034] The control unit MC is configured to control each part of the substrate processing system PS. The control unit MC can be a computer including a processor, a storage device, an input device, a display device, etc. The control unit MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on the recipe data stored in the storage device. The control unit MC is also the control unit of the substrate processing apparatus described below. The operation method according to the exemplary embodiment described below can be executed in the substrate processing system PS by controlling each part of the substrate processing system PS by the control unit MC.

[0035] Hereinafter, with reference to FIG. 2, a substrate processing apparatus according to an exemplary embodiment will be described. FIG. 2 is a diagram schematically showing a substrate processing apparatus according to one exemplary embodiment. The substrate processing apparatus 1 shown in FIG. 2 includes a chamber 10, a substrate support portion 12, a gas supply portion 14, an electron generator 16, a holder 18, and one or more power supplies 20 (see FIG. 6).

[0036] The chamber 10 provides an internal space. The chamber 10 may include a chamber body 10m. The chamber body 10m has a substantially cylindrical shape. The chamber body 10m provides the side wall of the chamber 10. The internal space of the chamber 10 is provided inside the chamber body 10m. The chamber body 10m is formed of a metal such as aluminum, for example. The chamber body 10m is electrically grounded. A corrosion-resistant film may be formed on the inner wall surface of the chamber body 10m. The corrosion-resistant film is, for example, an aluminum oxide film or a yttria film.

[0037] The chamber 10 may further include a top portion 10c. The top portion 10c includes a body 10cm. The body 10cm is formed of a metal such as aluminum, for example. Also, the body 10cm is electrically grounded. The body 10cm is provided so as to close the upper opening of the chamber body 10m together with a member 10i. The member 10i is interposed between the body 10cm of the top portion 10c and the upper end of the chamber body 10m.

[0038] The chamber 10 provides a passage 10p in its side wall. The substrate W and the electron generator 16 pass through the passage 10p when being transported between the inside and the outside of the chamber 10. The passage 10p can be opened and closed by a gate valve.

[0039] The substrate support portion 12 is provided in the chamber 10. The substrate support portion 12 is configured to support the substrate W placed thereon. The substrate support portion 12 may further support the edge ring ER placed thereon. The substrate W is disposed on the substrate support portion 12 and within the region surrounded by the edge ring ER.

[0040] In one embodiment, the substrate support portion 12 may include a base 12b and an electrostatic chuck 12c. The base 12b has a substantially disk shape. The base 12b is formed of a metal such as aluminum, for example. The electrostatic chuck 12c is provided on the base 12b. The electrostatic chuck 12c includes a dielectric portion and an electrode provided in the dielectric portion. When a voltage is applied from a DC power source to the electrode of the electrostatic chuck 12c, an electrostatic attraction force is generated between the substrate W placed on the electrostatic chuck 12c and the electrostatic chuck 12c. Due to the generated electrostatic attraction force, the substrate W is held by the electrostatic chuck 12c.

[0041] The substrate support portion 12 may further include an outer peripheral portion 12e. The outer peripheral portion 12e can be formed of an insulating material. The outer peripheral portion 12e extends upward from the bottom of the chamber 10 and extends along the circumferential direction so as to surround the base 12b and the electrostatic chuck 12c. The base 12b may be supported by the outer peripheral portion 12e.

[0042] In one embodiment, the substrate processing apparatus 1 may further include a baffle member 22. The baffle member 22 extends between the outer peripheral portion 12e and the side wall of the chamber 10. The baffle member 22 provides a plurality of through holes penetrating the baffle member 22 in the thickness direction. In one embodiment, the substrate processing apparatus 1 further includes an exhaust device 24. The exhaust device 24 is connected to the space in the chamber 10 below the baffle member 22.

[0043] In one embodiment, the substrate processing apparatus 1 may further include a bias power supply 26. The bias power supply 26 is electrically connected to the bias electrode of the substrate support 12 to draw the ions generated in the chamber 10 into the substrate W, and is configured to apply a bias voltage to the bias electrode. The bias electrode may be the base 12b or another conductive member in the substrate support 12.

[0044] The bias voltage is a positive voltage when negative ions are generated in the chamber 10, and is a negative voltage when positive ions are generated in the chamber 10. The bias voltage may be a DC voltage. Alternatively, the bias voltage may be applied to the bias electrode by supplying bias high-frequency power to the bias electrode by the bias power supply 26. When the bias power supply 26 supplies bias high-frequency power to the bias electrode, a matching unit is provided between the bias power supply 26 and the bias electrode.

[0045] The gas supply unit 14 is configured to supply gas into the chamber 10. In the illustrated example, the gas from the gas supply unit 14 is introduced into the chamber 10 from the top portion 10c. However, the gas from the gas supply unit 14 may be introduced into the chamber 10 from any location of the chamber 10.

[0046] Hereinafter, reference will be made to FIGS. 3 and 4 together with FIG. 2. FIG. 3 is a plan view of an electron generator according to one exemplary embodiment. FIG. 4 is a partially enlarged cross-sectional view of an electron generator according to one exemplary embodiment. The electron generator 16 includes a substrate 16s, a plurality of electron emission elements 16e, and a plurality of first contact electrodes 16c.

[0047] The substrate 16s has a substantially disk shape and is formed of, for example, silicon. The plurality of electron emission elements 16e are configured to emit electrons. As shown in FIGS. 3 and 4, the plurality of electron emission elements 16e are provided on one main surface of the substrate 16s. The plurality of electron emission elements 16e are arranged in a region inside the peripheral portion 16p of the substrate 16s on one main surface of the substrate 16s. The plurality of electron emission elements 16e are two-dimensionally distributed in the region. The plurality of electron emission elements 16e are arranged, for example, in a two-dimensional matrix.

[0048] The plurality of first contact electrodes 16c are provided in the peripheral portion 16p of the substrate 16s on one main surface of the substrate 16s. In one embodiment, the plurality of first contact electrodes 16c are arranged along the circumferential direction around the central axis of the substrate W. Each of the plurality of first contact electrodes 16c is connected to one or more of the plurality of electron emission elements 16e. That is, the plurality of electron emission elements 16e each constitute a plurality of electron emission element groups each including one or more electron emission elements 16e. The plurality of first contact electrodes 16c are respectively connected to the plurality of electron emission element groups. Note that the plurality of first contact electrodes 16c may be individually connected to the plurality of electron emission elements 16e.

[0049] As shown in FIG. 4, the electron generator 16 further includes an insulating layer 16i and a conductor layer 16d. The insulating layer 16i is provided on one main surface of the substrate 16s. The insulating layer 16i is formed of, for example, silicon oxide. The conductor layer 16d is formed of a metal such as titanium and is provided on the insulating layer 16i. The conductor layer 16d constitutes wirings that electrically connect the plurality of electron emission elements 16e, the plurality of first contact electrodes 16c, and the first contact electrodes 16c corresponding to each of the plurality of electron emission elements 16e. The insulating layer 16i has a plurality of regions formed to be partially thin. The plurality of regions of the insulating layer 16i and the plurality of regions of the conductor layer 16d extending on the plurality of regions constitute the plurality of electron emission elements 16e.

[0050] When a voltage is applied to the plurality of first contact electrodes 16c, electrons are emitted from each region of the conductor layer 16d that constitutes the plurality of electron-emitting elements 16e. The energy of the electrons emitted from each of the plurality of electron-emitting elements 16e is adjusted by the voltage applied to each of the plurality of electron-emitting elements 16e via the corresponding first contact electrode 16c. When the energy of the electrons emitted from the plurality of electron-emitting elements 16e is a relatively low first energy, the electrons attach to the gas in the chamber 10, and negative ions are generated. When the energy of the electrons emitted from the plurality of electron-emitting elements 16e is a second energy higher than the first energy, the electrons collide with the gas molecules in the chamber 10, the gas molecules dissociate, and positive ions are generated.

[0051] Hereinafter, reference will be made to FIGS. 5 and 6 together with FIG. 2. FIG. 5 is a plan view of a holder according to one exemplary embodiment. FIG. 6 is a partially enlarged cross-sectional view of a holder according to one exemplary embodiment. FIG. 6 depicts a cross-section taken along line VI-VI of the holder 18 shown in FIG. 5. The holder 18 has a ring shape. The holder 18 is configured to removably hold the electron generator 16 within the chamber 10.

[0052] The holder 18 includes a ring body 18m and a plurality of second contact electrodes 18c. The ring body 18m is a plate having a ring shape. The ring body 18m can be formed from an insulating material such as silicon oxide. The plurality of second contact electrodes 18c are provided on the ring body 18m. The holder 18 is configured to hold the electron generator 16 in a state where the plurality of electron-emitting elements 16e are directed toward the space within the chamber 10 and the plurality of first contact electrodes 16c are in contact with the plurality of second contact electrodes 18c, respectively. In one embodiment, the plurality of second contact electrodes 18c may be arranged along the circumferential direction so as to be contactable with the plurality of first contact electrodes 16c.

[0053] In one embodiment, the holder 18 may include an outer edge portion 18o and an inner edge portion 18i. The inner edge portion 18i has a step with respect to the outer edge portion 18o. In this case, the electron generator 16 is disposed on the inner edge portion 18i and inside the outer edge portion 18o. In this case, the position of the electron generator 16 on the holder 18 is determined by utilizing the step between the outer edge portion 18o and the inner edge portion 18i. In this case, a plurality of second contact electrodes 18c are provided at least on the inner edge portion 18i. The plurality of second contact electrodes 18c may extend radially from the inner edge portion 18i to the outer edge portion 18o.

[0054] In one embodiment, each of the plurality of second contact electrodes 18c may include a convex portion 18p that contacts a corresponding first contact electrode 16c. The convex portion 18p may have a conical shape, although not limited thereto. In this case, the reliability of the electrical connection between each of the plurality of second contact electrodes 18c and the corresponding first contact electrode 16c is enhanced.

[0055] In one embodiment, as shown in FIG. 2, the holder 18 is configured to hold the electron generator 16 between the top portion 10c of the chamber 10 and the holder 18. In this case, the top portion 10c includes an insulating portion 10ci. The insulating portion 10ci is formed of an insulating material and is provided at a location where the holder 18 (the plurality of second contact electrodes 18c) contacts the top portion 10c.

[0056] In one embodiment, the substrate processing apparatus 1 may further include one or more first actuators 28. In the illustrated example, the substrate processing apparatus 1 includes a plurality of first actuators 28. The plurality of first actuators 28 are configured to move the holder 18 up and down within the chamber 10.

[0057] Each of the plurality of first actuators 28 may include a shaft 28s and a drive unit 28d. The drive unit 28d is a motor or a hydraulic or pneumatic cylinder, and is provided above the top portion 10c of the chamber 10. The plurality of first actuators 28, that is, the drive units 28d, can be controlled by the control unit MC. The shaft 28s is connected to the drive unit 28d. The shaft 28s extends downward from the drive unit 28d and penetrates through the top portion 10c of the chamber 10. The lower end of the shaft 28s is connected to the outer edge portion 18o of the holder 18, and the holder 18 is fixed to the shaft 28s. When the shaft 28s is moved up and down by the drive unit 28d, the holder 18 is moved up and down. A pair of end plates 28p may be arranged along the shaft 28s. A bellows 28b may be provided between these end plates 28p. The space in the chamber 10 is hermetically sealed around the shaft 28s by these end plates 28p and the bellows 28b.

[0058] The substrate processing apparatus 1 may include a plurality of power supplies 20 as one or more power supplies 20. Each of the plurality of power supplies 20 is electrically connected to the electron generator 16 via the holder 18. As shown in FIG. 6, each of the plurality of power supplies 20 is electrically connected to the corresponding electron emission element 16e via the corresponding second contact electrode 18c and the corresponding first contact electrode 16c.

[0059] In one embodiment, the substrate processing apparatus 1 may further include a plurality of electrode pins 30. Each of the plurality of electrode pins 30 is electrically connected to the plurality of power supplies 20. Each of the plurality of electrode pins 30 is configured to elastically contact the plurality of second contact electrodes 18c. As shown in FIG. 6, the plurality of electrode pins 30 may be spring-type electrode pins such as pogo pins. Each of the plurality of electrode pins 30 elastically contacts the second contact electrode 18c by the spring reaction force generated when the second contact electrode 18c abuts against the tip (lower end) thereof.

[0060] In one embodiment, the substrate processing apparatus 1 may further include a plurality of lift pins 32 and one or more second actuators 34 as shown in FIG. 2. In the illustrated example, the substrate processing apparatus 1 includes a plurality of second actuators 34.

[0061] The plurality of lift pins 32 are configured to support the substrate above the substrate support portion 12. Each of the plurality of lift pins 32 passes through a through hole formed in the substrate support portion 12. Each of the plurality of lift pins 32 is movable upward so that its tip protrudes upward from the substrate support portion 12, and is movable downward so as to retract the tip downward from the upper surface of the substrate support portion 12.

[0062] The plurality of second actuators 34 are configured to move the plurality of lift pins 32 up and down with respect to the upper surface of the substrate support portion 12. Each of the plurality of second actuators 34 includes a drive unit 34d. The drive unit 34d is a motor or a hydraulic or pneumatic cylinder, and is provided below the bottom of the chamber 10. The plurality of lift pins 32 are connected to the drive unit 34d of the corresponding second actuator 34. Each of the plurality of lift pins 32 extends upward from the drive unit 34d of the corresponding second actuator 34. Note that a pair of end plates 34p may be arranged along the corresponding lift pin 32. A bellows 34b may be provided between these end plates 34p. The space in the chamber 10 is hermetically sealed around the corresponding lift pin 32 by these end plates 34p and the bellows 34b.

[0063] The plurality of second actuators 34, that is, the drive units 34d, can be controlled by the control unit MC. The control unit MC can control the plurality of first actuators 28 and the plurality of second actuators 34 so as to transfer the electron generator 16 between the holder 18 and the plurality of lift pins 32. Further, the control unit MC can control the plurality of second actuators 34 and the transfer device TU2 so as to transfer the electron generator 16 between the arm of the transfer device TU2 and the plurality of lift pins 32 in the chamber 10.

[0064] As described above, in the substrate processing apparatus 1, the electron generator 16 is detachably held by the holder 18 in the chamber 10. Therefore, the electron generator 16 can be easily removed in the chamber 10 and can be easily carried out of the chamber 10. Further, by holding the electron generator 16 by the holder 18 in the chamber 10, an electrical connection between the electron generator 16 and one or more power supplies 20 is easily formed. Therefore, according to the substrate processing apparatus 1, the electron generator 16 can be easily attached in the chamber 10. Therefore, according to the substrate processing apparatus 1, the electron generator 16 can be easily replaced.

[0065] Also, as described above, a plurality of power supplies 20 are electrically connected to one or more corresponding electron emission elements 16e among the plurality of electron emission elements 16e. Therefore, according to the substrate processing apparatus 1, the voltages applied to the plurality of electron emission element groups constituted by the plurality of electron emission elements 16e can be individually controlled.

[0066] Hereinafter, an operation method of a substrate processing system according to one exemplary embodiment will be described. In the operation method, each part of the substrate processing system PS and each part of the substrate processing apparatus 1 can be controlled by the control unit MC. In the following description, FIGS. 7 to 12 are referred to. FIGS. 7 to 12 are diagrams showing the states of the substrate processing apparatus after the corresponding steps of the operation method of the substrate processing system according to one exemplary embodiment.

[0067] First, in the operation method, the process in which the electron generator 16 is removed from the chamber 10 and carried out of the chamber 10 will be described. In this process, first, as shown in FIG. 7, the holder 18 together with the electron generator 16 is moved downward by a plurality of first actuators 28.

[0068] Next, as shown in FIG. 8, a plurality of lift pins 32 are moved upward by a plurality of second actuators 34. As a result, as shown in FIG. 8, the electron generator 16 is transferred from the holder 18 to the plurality of lift pins 32.

[0069] Next, as shown in FIG. 9, the transfer device TU2 causes its arm TA to enter the chamber 10. The arm TA enters the region below the electron generator 16 and above the holder 18.

[0070] Next, the plurality of lift pins 32 are moved downward by the plurality of second actuators 34. As a result, as shown in FIG. 10, the electron generator 16 is transferred from the plurality of lift pins 32 to the arm TA.

[0071] Next, the transfer device TU2 moves the arm TA from the inside of the chamber 10 to the outside. As a result, as shown in FIG. 11, the electron generator 16 is carried out of the chamber 10.

[0072] Hereinafter, in the operation method, the processing until the electron generator 16 is carried into the chamber 10 and held therein will be described. In this processing, first, the holder 18 is moved downward by the first actuator. As a result, the position of the holder 18 in the chamber 10 becomes the position as shown in FIG. 11.

[0073] Next, the transfer device TU2 causes the arm TA supporting the electron generator 16 to enter the chamber 10. As a result, as shown in FIG. 10, the electron generator 16 is carried into the chamber 10.

[0074] Next, the plurality of lift pins 32 are moved upward by the plurality of second actuators 34. As a result, the electron generator 16 is transferred from the arm TA to the plurality of lift pins 32. The electron generator 16 is supported by the plurality of lift pins 32 as shown in FIG. 9.

[0075] Next, the holding body 18 is moved upward by a plurality of first actuators 28. As a result, the electron generator 16 is transferred from the plurality of lift pins 32 to the holding body 18. Then, the holding body 18 is further moved upward by the plurality of first actuators 28, and the electron generator 16 is held by the holding body 18 as shown in FIG. 12. As a result, the plurality of electron emission elements 16e are electrically connected to one or more power supplies 20 via the holding body 18. Thereafter, the plurality of lift pins 32 are moved by the plurality of first actuators 28 so that their tips are retracted downward with respect to the upper surface of the substrate support portion 12.

[0076] Hereinafter, refer to FIGS. 13 and 14. FIG. 13 is a plan view of an electron generator according to another exemplary embodiment. FIG. 14 is a partially enlarged cross-sectional view of an electron generator according to another exemplary embodiment. The electron generator 16A shown in FIGS. 13 and 14 can be used in the substrate processing apparatus 1 instead of the electron generator 16. The electron generator 16A includes a substrate 16s, a plurality of electron emission elements 16e, and a plurality of first contact electrodes 16c.

[0077] Also in the electron generator 16A, the substrate 16s has a substantially disk shape and is formed of, for example, silicon. The plurality of electron emission elements 16e are configured to emit electrons. The plurality of first contact electrodes 16c are provided at the peripheral edge of the substrate 16s on one main surface of the substrate 16s.

[0078] The electron generator 16A further includes an insulating film 16f, an insulating film 16g, a plurality of first electrodes 16y, and a plurality of second electrodes 16x. The insulating film 16f is formed of an insulating material such as silicon oxide and is formed on the substrate 16s.

[0079] The electron generator 16A includes N first electrodes 16y1 to 16yN as a plurality of first electrodes 16y. The plurality of first electrodes 16y are strip-shaped and are formed of a metal such as molybdenum, for example. The plurality of first electrodes 16y extend along a first direction on one main surface of the substrate 16s, that is, on the insulating film 16f. The plurality of first electrodes 16y are arranged along a second direction orthogonal to the first direction on the insulating film 16f. The insulating film 16g is formed of an insulating material such as silicon oxide and is provided so as to cover the plurality of first electrodes 16y and the insulating film 16f.

[0080] The electron generator 16A includes M second electrodes 16x1 to 16xM as a plurality of second electrodes 16x. The plurality of second electrodes 16x are strip-shaped and are formed of a metal such as titanium, for example. The plurality of second electrodes 16x extend along the second direction and are arranged along the first direction. The plurality of second electrodes 16x are provided such that the insulating film 16g is interposed between the plurality of first electrodes 16y and the plurality of second electrodes 16x.

[0081] In the electron generator 16A, a plurality of regions where the plurality of first electrodes 16y and the plurality of second electrodes 16x overlap each other constitute a plurality of electron emission elements 16e. The plurality of first electrodes 16y and the plurality of second electrodes 16x provide a plurality of first contact electrodes 16c at the peripheral portion of the electron generator 16A.

[0082] Hereinafter, with reference to FIGS. 13 and 14, FIGS. 15 and 16 will be referred to. FIG. 15 is a diagram showing a configuration related to the driving of an electron generator according to another exemplary embodiment. FIG. 16 is a timing chart of voltages applied to the electron generator according to another exemplary embodiment. In FIG. 16, the voltages Vx1 to VxM respectively indicate the voltages of the second electrodes 16x1 to 16xM, and the voltages Vy1 to VyN respectively indicate the voltages of the first electrodes 16y1 to 16yN.

[0083] As shown in FIG. 15, when using the electron generator 16A, the substrate processing apparatus 1 includes a first power supply 201 and a second power supply 202 as one or more power supplies 20. Also, in this case, the substrate processing apparatus 1 further includes a driver 40 and a switching unit 42.

[0084] The driver 40 includes a plurality of amplifiers. Each of the plurality of amplifiers is connected between the first power supply 201 and the corresponding first electrode among the plurality of first electrodes 16y (that is, the first electrodes 16y1 to 16yN). As shown in FIG. 16, each of the plurality of amplifiers of the driver 40 is configured to adjust the voltage (that is, its level) from the first power supply 201 and apply the adjusted voltage to the corresponding first electrode. The amplification factor of the plurality of amplifiers of the driver 40 and the timing of the change in the amplification factor can be controlled by the control unit MC.

[0085] The switching unit 42 includes a plurality of switching elements. Each of the plurality of switching elements is connected between the second power supply 202 and the corresponding second electrode among the plurality of second electrodes 16x (that is, the second electrodes 16x1 to 16xM). The switching unit 42 is configured to sequentially apply the voltage V ON from the second power supply 202 to the plurality of second electrodes 16x as shown in FIG. 16. Note that the voltage of each of the plurality of second electrodes 16x when the voltage from the second power supply 202 is not applied to them is V OFF . The opening and closing timing of the plurality of switching elements of the switching unit 42 can be controlled by the control unit MC.

[0086] In the electron generator 16A, to each of the plurality of electron emission elements 16e, a differential voltage between the voltage applied to the first electrode 16y constituting it (the corresponding voltage among Vy1 to VyN) and the voltage applied to the second electrode 16x constituting it (V ON ) is applied. Each of the plurality of electron emission elements 16e emits electrons having energy corresponding to the voltage applied to it. Note that for each of the plurality of electron emission elements 16e, the voltage of the second electrode 16x constituting it is VOFF When it is in a certain state, it does not emit electrons.

[0087] Hereinafter, refer to FIGS. 17 and 18. FIG. 17 is a diagram schematically showing a substrate processing apparatus according to another exemplary embodiment. FIG. 18 is a plan view of an electron generator according to another exemplary embodiment. The substrate processing apparatus 1B shown in FIG. 17 can be used as one process module of the substrate processing system PS. Hereinafter, the substrate processing apparatus 1B will be described from the viewpoint of the differences between the substrate processing apparatus 1B and the substrate processing apparatus 1.

[0088] In the substrate processing apparatus 1B, the top portion 10c includes an electrostatic chuck 10e. The electrostatic chuck 10e provides the lower surface of the top portion 10c. The electrostatic chuck 10e is configured to hold the electron generator 16B by electrostatic attraction. The electrostatic chuck 10e includes a dielectric portion and an electrode provided in the dielectric portion. When a DC voltage from a power source is applied to the electrode of the electrostatic chuck 10e, an electrostatic attraction is generated between the electrostatic chuck 10e and the electron generator 16B. The electron generator 16B is attracted to the electrostatic chuck 10e by electrostatic attraction and is held by the electrostatic chuck 10e.

[0089] The main body 10cm of the top portion 10c provides a flow path 10f. The flow path 10f is formed such that a refrigerant flows through it. The refrigerant is supplied from a chiller unit provided outside the chamber 10 to the flow path 10f. In the substrate processing apparatus 1B, by supplying the refrigerant to the flow path 10f, the top portion 10c is cooled, and the electron generator 16B is cooled by heat exchange between the top portion 10c and the electron generator 16B. In the substrate processing apparatus 1B, since the electron generator 16B is attracted to the electrostatic chuck 10e, the heat exchange between the electron generator 16B and the top portion 10c is promoted.

[0090] In the substrate processing apparatus 1B, a member 50 is provided on the top portion 10c. The member 50 provides a gas diffusion chamber 50d between the top portion 10c and the member 50. The top portion 10c provides a plurality of gas holes 10h extending downward from the gas diffusion chamber 50d. As shown in FIGS. 15 and 16, the electron generator 16B provides a plurality of gas holes 16h. The plurality of gas holes 16h penetrate through the electron generator 16B. Each of the plurality of gas holes 16h communicates with the plurality of gas holes 10h. In the substrate processing apparatus 1B, the gas from the gas supply unit 14 is introduced into the space in the chamber 10 from the plurality of gas holes 16h via the gas diffusion chamber 50d and the plurality of gas holes 10h. Note that other configurations of the electron generator 16B are the same as the corresponding configurations of the electron generator 16A.

[0091] Although various exemplary embodiments have been described above, various additions, omissions, substitutions, and changes may be made without being limited to the above-described exemplary embodiments. Also, it is possible to form other embodiments by combining elements in different embodiments.

[0092] From the above description, it will be understood that the various embodiments of the present disclosure have been described herein for the purpose of illustration and that various changes can be made without departing from the scope and spirit of the present disclosure. Therefore, the various embodiments disclosed herein are not intended to be limiting, and the true scope and spirit are indicated by the appended claims.

Explanation of Reference Numerals

[0093] PS… Substrate processing system, TU2… Transfer device, 1… Substrate processing apparatus, 10… Chamber, 12… Substrate support unit, 14… Gas supply unit, 16… Electron generator, 16s… Substrate, 16e… Electron emission element, 16c… First contact electrode, 18… Holder, 18m… Ring body, 18c… Second contact electrode, 20… Power supply.

Claims

1. A chamber, a substrate support portion provided in the chamber, a gas supply portion configured to supply gas into the chamber, an electron generator, a holder having a ring shape and configured to removably hold the electron generator in the chamber, one or more power supplies electrically connected to the electron generator via the holder, comprising: the electron generator includes a substrate, a plurality of electron emission elements provided on one main surface of the substrate, a plurality of first contact electrodes provided at a peripheral portion of the one main surface, and includes the holder includes a ring main body having a ring shape, a plurality of second contact electrodes provided on the ring main body, and includes. The electron generator is held in a state where the plurality of electron emission elements are directed toward the space in the chamber and the plurality of first contact electrodes are in contact with the plurality of second contact electrodes respectively. The one or more power supplies are electrically connected to corresponding ones of the plurality of electron emission elements via corresponding ones of the plurality of second contact electrodes and corresponding ones of the plurality of first contact electrodes. A substrate processing apparatus.

2. The holder includes an outer edge portion and an inner edge portion having a step with respect to the outer edge portion, the plurality of second contact electrodes are provided at least on the inner edge portion, and the electron generator is disposed on the inner edge portion and inside the outer edge portion. The substrate processing apparatus according to Claim 1.

3. Each of the plurality of second contact electrodes includes a convex portion that contacts a corresponding one of the plurality of first contact electrodes. The substrate processing apparatus according to Claim 1 or 2.

4. The plurality of first contact electrodes and the plurality of second contact electrodes are arranged along the circumferential direction. The substrate processing apparatus according to any one of Claims 1 to 3.

5. The ring main body is formed of an insulating material. The substrate processing apparatus according to any one of Claims 1 to 4.

6. Comprising a plurality of power supplies as the one or more power supplies, each of the plurality of power supplies is electrically connected to one or more corresponding ones of the plurality of electron emission elements. The substrate processing apparatus according to any one of Claims 1 to 5.

7. The electron generator is A plurality of first electrodes extending along a first direction on the one main surface of the substrate and arranged along a second direction orthogonal to the first direction; A plurality of second electrodes extending along the second direction and arranged along the first direction, provided such that an insulating film is interposed between the plurality of first electrodes and the plurality of second electrodes; including; A plurality of regions where the plurality of first electrodes and the plurality of second electrodes overlap constitute the plurality of electron-emitting elements; The plurality of first electrodes and the plurality of second electrodes constitute the plurality of first contact electrodes at the peripheral portion; The substrate processing apparatus; A driver configured to adjust a voltage from a first power source included in the one or more power sources and apply it to the plurality of first electrodes; A switching unit configured to sequentially apply a voltage from a second power source included in the one or more power sources to the plurality of second electrodes; further comprising; The substrate processing apparatus according to any one of claims 1 to 5.

8. Further comprising a first actuator configured to move the holding body up and down in the chamber; The holding body is configured to hold the electron generator between the top of the chamber and the holding body; The substrate processing apparatus according to any one of claims 1 to 7.

9. The substrate processing apparatus according to claim 8, further comprising a plurality of electrode pins electrically connected to the one or more power sources and configured to elastically contact the plurality of second contact electrodes.

10. The substrate processing apparatus according to claim 8 or 9, wherein the top of the chamber includes an electrostatic chuck configured to hold the electron generator by electrostatic attraction.

11. The substrate processing apparatus according to claim 10, wherein the top of the chamber provides a flow path formed such that a refrigerant flows therein.

12. A plurality of lift pins configured to support a substrate above the substrate support portion; A second actuator configured to move the plurality of lift pins up and down with respect to the upper surface of the substrate support portion; A control unit; further comprising; The control unit is configured to control the first actuator and the second actuator so as to transfer the electron generator between the holding body and the plurality of lift pins. The substrate processing apparatus according to any one of claims 8 to 11.

13. The substrate processing apparatus according to claim 12, a transfer device provided outside the chamber, including an arm capable of entering the chamber; comprising: The control unit is configured to control the second actuator and the transfer device so as to transfer the electron generator between the arm and the plurality of lift pins within the chamber. A substrate processing system.

14. An operation method of the substrate processing system according to claim 13, comprising: moving the holder downward together with the electron generator using the first actuator; transferring the electron generator from the holder to the plurality of lift pins by moving the plurality of lift pins upward using the second actuator; causing the arm to enter the chamber; transferring the electron generator from the plurality of lift pins to the arm by moving the plurality of lift pins downward using the second actuator; carrying out the electron generator from the inside of the chamber by moving the arm from the inside to the outside of the chamber; An operation method including the above steps.

15. moving the holder downward using the first actuator; causing the arm supporting the electron generator to enter the chamber; transferring the electron generator from the arm to the plurality of lift pins by moving the plurality of lift pins upward using the second actuator; transferring the electron generator from the plurality of lift pins to the holder by moving the holder upward using the first actuator; holding the electron generator by the holder; The operation method according to claim 14, further including the above steps.

Images