Mask blank, resist pattern forming method, and chemically amplified positive resist composition

JP7722257B2Active Publication Date: 2025-08-13SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
JP2022077283
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-05-10
Publication Date
2025-08-13
Estimated Expiration
2042-05-10

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Abstract

To provide a mask blank with a resist film enabling formation of a pattern with a very high resolution, reduced LER, superior rectangularity, and superior pattern fidelity, a resist pattern forming process and a chemically amplified positive resist composition.SOLUTION: A mask blank comprises a resist film obtained by coating a chemically amplified positive resist composition, which comprises a base polymer containing a polymer comprising phenolic hydroxy group-containing units, represented by a formula (A1), and repeat units containing carboxy groups protected with acid labile groups, represented by a specific formula, as well as an organic solvent.SELECTED DRAWING: None
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Citation Information

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