Semiconductor device and manufacturing method

Abstract

To solve such a problem that it is preferable that a donor concentration and a range of a donor area generated by coupling of a crystal defect with hydrogen are highly accurately controlled.SOLUTION: A semiconductor device comprising a semiconductor substrate having an upper surface and a lower surface is provided, including: a first donor concentration peak of which the donor concentration distribution is provided in a first depth in a depth direction connecting the upper surface and the lower surface of the semiconductor substrate; a second donor concentration peak which is provided in second depth on the upper surface side from the first donor concentration peak, and of which the concentration is lower than the first donor concentration peak; a flatness region where the donor concentration distribution is actually flat between the first donor concentration peak and the second donor concentration peak of which, and a thickness in the depth direction is 10% or larger of the thickness of the semiconductor substrate; and a plurality of donor concentration peaks provided on the lower surface side from the first donor concentration peak.SELECTED DRAWING: Figure 7

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