Semiconductor isolation bridge for three-dimensional dynamic random access memory.

Abstract

A semiconductor device and method for fabricating the same are described. The method forms a 3D DRAM architecture that includes a semiconductor isolation bridge to eliminate the floating body effect. The method includes forming an epitaxial layer in deep trench isolation openings and creating a semiconductor isolation bridge between adjacent deep trench isolation openings.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate generally to semiconductor devices. More particularly, embodiments of the present disclosure provide three-dimensional dynamic random access memory cells and methods for forming three-dimensional dynamic random access memory cells. [Background technology]

[0002]

[0002] Electronic devices, such as personal computers, workstations, computer servers, mainframes, and other computer-related equipment such as printers, scanners, and hard disk drives, use memory devices that provide ample data storage capacity while consuming low power. There are two main types of random access memory cells suitable for use in electronic devices: dynamic and static. Dynamic random access memory (DRAM) can be programmed to store a voltage representing one of two binary values, but may require periodic reprogramming or "refreshing" to maintain this voltage for more than a very short period of time. Static random access memory (SRAM) is so named because it does not require periodic refreshing.

[0003] DRAM memory circuits are fabricated by replicating millions of identical circuit elements, known as DRAM cells, on a single semiconductor wafer. Each DRAM cell is an addressable location that can store one bit (binary digit) of data. In its most common form, a DRAM cell consists of two circuit components: a field-effect transistor (FET) and a capacitor.

[0004]

[0004] Fabricating a DRAM cell involves fabricating a transistor, a capacitor, and three contacts (one each for the bit line, word line, and reference voltage). DRAM manufacturing is a competitive business. There is a continuous push to reduce the size of individual cells and increase the density of memory cells, especially at densities above 256 megabits, so that more memory can be packed onto a single memory chip. Limitations on cell size reduction include the path of both active and inactive word lines through the cell, the size of the cell capacitor, and the compatibility of array devices with non-array devices. Forming low-resistance contacts between the active area and the bottom electrode of a 3D DRAM is essential to device performance.

[0005]

[0005] In DRAM devices, one of the primary goals is to increase storage per unit space, resulting in an increase in the vertical dimension, or stack height, of the DRAM device. Vertical cell DRAM has the advantage of reducing chip area by approximately one-third compared to conventional cell DRAM. However, because bitlines are formed in silicon trenches, floating-body access transistors can be formed.

[0006] Therefore, there is a need for a 3D DRAM device and method of fabrication that does not form a floating body access transistor and does not increase the area of the cell. Summary of the Invention

[0007]

[0007] One or more embodiments of the present disclosure are directed to a method of forming a semiconductor memory device. In one or more embodiments, the method of forming the semiconductor memory device includes forming a memory stack including alternating layers of a first material layer and a second material layer, etching a plurality of openings in the memory stack to form at least one deep trench isolation opening, at least one word line opening, and at least one P substrate opening, depositing a first oxide layer in each of the at least one deep trench isolation opening, the at least one word line opening, and the at least one P substrate opening, selectively removing the first oxide layer from the at least one P substrate opening, forming an epitaxial layer in the at least one P substrate opening, enlarging the at least one deep trench isolation opening, depositing a second oxide layer in the at least one deep trench isolation opening, depositing a nitride layer in the at least one deep trench isolation opening and on the second oxide layer, removing the first oxide layer from the word line opening, and forming a word line gate in the at least one word line opening.

[0008]

[0008] Additional embodiments of the present disclosure are directed to methods of forming a semiconductor memory device. In one or more embodiments, the method of forming the semiconductor memory device includes depositing a first oxide layer in each of at least one deep trench isolation opening, at least one wordline opening, and at least one P substrate opening in a memory stack, the memory stack including alternating layers of a first material layer and a second material layer, selectively removing the first oxide layer from the at least one P substrate opening, forming an epitaxial layer in the P substrate opening, forming bridges between adjacent deep trench isolation openings, depositing a second oxide layer in the at least one deep trench isolation opening, depositing a nitride layer in the at least one deep trench isolation opening and on the second oxide layer, depositing a high-k layer in the P substrate opening on an upper surface of the epitaxial layer, removing the first oxide layer from the wordline opening, and forming a wordline gate in the at least one wordline opening.

[0009]

[0009] So that the features of the present disclosure described above may be understood in detail, a more particular description of the present disclosure briefly summarized above will be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. However, since the present disclosure is also susceptible to other equally effective embodiments, it should be noted that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure. [Brief explanation of the drawings]

[0010] [Figure 1]

[0010] A process flow diagram of a method according to one or more embodiments is shown. [Figure 2A]

[0011] 1 illustrates a top view of a device according to one or more embodiments. [Figure 2B]

[0012] 2B shows an enlarged cross-sectional view of a portion of the device of FIG. 2A according to one or more embodiments. [Figure 3A]

[0013] 1 illustrates a top view of a device according to one or more embodiments. [Figure 3B]

[0014] 3B shows an enlarged cross-sectional view of a portion of the device of FIG. 3A according to one or more embodiments. [Figure 4A]

[0015] 1 illustrates a top view of a device according to one or more embodiments. [Figure 4B]

[0016] 4B shows an enlarged cross-sectional view of a portion of the device of FIG. 4A according to one or more embodiments. [Figure 5A]

[0017] 1 illustrates a top view of a device according to one or more embodiments. [Figure 5B]

[0018] 5B shows an enlarged cross-sectional view of a portion of the device of FIG. 5A according to one or more embodiments. [Figure 5C]

[0019] 5B shows an enlarged cross-sectional view of a portion of the device of FIG. 5A according to one or more embodiments. [Figure 6A]

[0020] 1 illustrates a top view of a device according to one or more embodiments. [Figure 6B]

[0021] 6B shows an enlarged cross-sectional view of a portion of the device of FIG. 6A according to one or more embodiments. [Figure 7]

[0022] 1 illustrates a cluster tool in accordance with one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0023] For ease of understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0012]

[0024] Before describing several example embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0013]

[0025] In the following description, numerous specific details (such as particular materials, chemical properties, and dimensions of elements) are presented to provide a thorough understanding of one or more embodiments of the present disclosure. However, it will be apparent to one skilled in the art that one or more embodiments of the present disclosure may be practiced without these specific details. In other instances, semiconductor manufacturing processes, techniques, materials, equipment, and the like have not been described in detail so as not to unnecessarily obscure the description. Using the description contained herein, one skilled in the art will be able to implement the appropriate functionality without undue experimentation.

[0014]

[0026] While certain exemplary embodiments of the present disclosure have been described and are shown in the accompanying drawings, it is to be understood that such embodiments are merely illustrative and do not limit the present disclosure, and that the present disclosure is not limited to the specific constructions and arrangements shown and described, since variations may occur to those skilled in the art.

[0015]

[0027] As used in this specification and the appended claims, the terms "precursor," "reactant," "reactive gas," and the like are used interchangeably and refer to any gas species capable of reacting with the substrate surface.

[0016]

[0028] According to one or more embodiments, the term "on," with respect to a film or layer of a film, includes a film or layer directly on a surface (e.g., a substrate surface) as well as one or more underlying layers between the film or layer and the surface (e.g., a substrate surface). Thus, in one or more embodiments, the phrase "on the substrate surface" is intended to include one or more underlying layers. In other embodiments, the phrase "directly" refers to a layer or film in contact with a surface (e.g., a substrate surface) without any intervening layers. Thus, "a layer directly on the substrate surface" refers to a layer in direct contact with the substrate surface with no intervening layers.

[0017]

[0029] A transistor is a circuit component or element that is often formed on a semiconductor device. Depending on the circuit design, transistors may be formed on the semiconductor device in addition to capacitors, inductors, resistors, diodes, conductive lines, or other elements. Generally, a transistor includes a gate formed between a source region and a drain region. In one or more embodiments, the source and drain regions include doped regions of a substrate and exhibit a doping profile suitable for a particular application. The gate is located over a channel region and includes a gate dielectric interposed between the gate electrode in the substrate and the channel region.

[0018]

[0030] As used herein, the term "field effect transistor" or "FET" refers to a transistor that uses an electric field to control the electrical behavior of the device. Enhancement mode field effect transistors generally exhibit very high input impedance at low temperatures. The conductivity between the drain and source terminals is controlled by the electric field within the device, which is generated by a voltage difference between the body and gate of the device. The three terminals of a FET are the source (S), where carriers enter the channel, the drain (D), where carriers exit the channel, and the gate (G), which regulates the conductivity of the channel. Traditionally, the current entering the channel from the source (S) is referred to as I S , the current entering the channel from the drain (D) is ID The drain-source voltage is V DS By applying a voltage to the gate (G), the drain (i.e., I D ) can control the current entering the channel.

[0019]

[0031] A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of field-effect transistor (FET). It has an insulated gate; the voltage across the gate determines the device's conductivity. This ability to change conductivity in response to an applied voltage is used to amplify or switch electronic signals. MOSFETs are based on modulation of charge concentration by a metal-oxide-semiconductor (MOS) capacitor between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer. Compared to a MOS capacitor, a MOSFET contains two additional terminals (source and drain), each connected to a separate highly doped region separated by a body region. These regions can be either p-type or n-type, but both are the same type, opposite the body region. The source and drain (unlike the body) are highly doped, denoted by a "+" symbol after their doping type.

[0020]

[0032] If the MOSFET is an n-channel or nMOS FET, the source and drain are n+ regions and the body is p region. If the MOSFET is a p-channel or pMOS FET, the source and drain are p+ regions and the body is n region. The source is so named because it is the source of charge carriers (electrons for n-channel and holes for p-channel) that flow through the channel; similarly, the drain is so named because it is where the charge carriers exit the channel.

[0021]

[0033] As used herein, the term "fin field effect transistor (FinFET)" refers to a MOSFET transistor constructed on a substrate where the gates are located on two or three sides of the channel, forming a double-gate or triple-gate structure. FinFET devices are given the collective name FinFET because the channel region forms a "fin" on the substrate. FinFET devices have fast switching times and high current densities.

[0022]

[0034] As used herein, the term "gate-all-around (GAA)" is used to refer to an electronic device, such as a transistor, in which a gate material surrounds a channel region on all sides. The channel region of a GAA transistor may comprise a nanowire, nanoslab, or nanosheet, a rod-shaped channel, or other suitable channel configuration known to those skilled in the art. In one or more embodiments, the channel region of a GAA device comprises multiple vertically spaced horizontal nanowires or bars, making the GAA transistor a stacked horizontal gate-all-around (hGAA) transistor.

[0023]

[0035] As used herein, the term "nanowire" means a distance of 1 nanometer 10 -9 Nanowires refer to nanostructures having diameters on the order of 1000 to 10000 nm. Nanowires can also be defined as having a length-to-width ratio greater than 1000. Alternatively, nanowires can be defined as structures whose thickness or diameter is constrained to tens of nanometers or less, but whose length is not. Nanowires are used in transistor and some laser applications and, in one or more embodiments, are made of semiconducting, metallic, insulating, superconducting, or molecular materials. In one or more embodiments, nanowires are used in transistors for logic CPUs, GPUs, MPUs, and volatile (e.g., DRAM) and nonvolatile (e.g., NAND) devices. As used herein, the term "nanosheet" refers to a two-dimensional nanostructure having a thickness ranging from about 0.1 nm to about 1000 nm.

[0024]

[0036] As used herein, the term "dynamic random access memory" or "DRAM" refers to a memory cell that stores a data bit by storing a packet of charge (i.e., a binary 1) or no charge (i.e., a binary 0) on a capacitor. The charge is gated onto the capacitor through an access transistor and sensed by turning on the same transistor and observing the voltage perturbation caused by dumping the charge packet onto the interconnect line at the transistor output. Thus, a single DRAM cell is made of one transistor and one capacitor. A DRAM device is formed from an array of DRAM cells.

[0025]

[0037] Traditionally, DRAM cells have recessed high work function metal structures in a buried word line structure. In DRAM devices, the word lines are formed in a polysilicon gate level at the surface of the substrate, while the bit lines are formed in a metal level located above the substrate. In buried word lines (bWL), the word lines are buried below the surface of the semiconductor substrate, using metal as the gate electrode.

[0026]

[0038] As used herein, the term "floating body effect" refers to a major parasitic effect in silicon-on-insulator technology, resulting from the complete isolation of the transistor from the substrate. This effect is related to the accumulation of positive charge within the silicon body of the transistor due to holes created by band-to-band tunneling. This charge cannot be removed quickly enough, primarily due to the unavailability of contacts with the silicon film. The floating body effect can cause circuit instabilities, frequency-dependent delay times, and pulse stretching.

[0027]

[0039] Embodiments of the present disclosure are illustrated by diagrams that illustrate devices (e.g., transistors, memory devices, etc.) and processes for forming the devices in accordance with one or more embodiments of the present disclosure. The illustrated processes are merely exemplary of possible applications of the disclosed processes, and one of ordinary skill in the art will recognize that the disclosed processes are not limited to the applications illustrated.

[0028]

[0040] One or more embodiments of the present disclosure are described with reference to the figures. In one or more embodiment methods, a semiconductor memory device is fabricated. In one or more embodiments, a local vertical substrate connection is advantageously formed for every channel. A portion of the deep trench isolation (DTI) is used to grow epitaxial silicon on the memory stack sidewalls of the DTI and on the bottom of the DTI, which connects to the original silicon wafer substrate.

[0029]

[0041] In one or more embodiments, the epitaxial silicon can be grown doped with boron to create a P substrate, or can be doped after epitaxial growth to create a graded doping profile. The center of the P substrate pillar can have a high-k oxide layer, such as aluminum oxide (Al2O3), so that the backside is more P-type (dipole). In one or more embodiments, for a true back gate (P-type), a gate can be deposited in the center of the P substrate pillar.

[0030]

[0042] In one or more embodiments, this epitaxial layer is not doped with germanium, so it will not be recessed when the gap for the gate oxide and gate electrode is formed, and will remain as a substrate connection for the channels. Isolation between the channels in this location connected by silicon will then be achieved by boron doping, in the same way that the bottoms of the bWL fins in 2D DRAM are laterally isolated from each other.

[0031]

[0043] FIG. 1 illustrates a process flow diagram for a method 10 for forming a semiconductor device according to some embodiments of the present disclosure. FIGS. 2A-6B illustrate fabrication stages of a semiconductor structure according to some embodiments of the present disclosure. Method 10 is described below with reference to FIGS. 2A-6B. FIGS. 2A-6B illustrate top and cross-sectional views of an electronic device according to one or more embodiments. Method 10 can be part of a multi-step fabrication process for a semiconductor device. The methods and structures of one or more embodiments form structures for 3D DRAM using gate-all-around (GAA) transistors incorporated in alternating heteroepitaxially grown layers of crystalline silicon (c-Si) and crystalline silicon germanium (c-SiGe).

[0032]

[0044] In one or more embodiments, method 10 may be performed in any suitable process chamber connected to a cluster tool, which may include process chambers for manufacturing semiconductor devices, such as chambers configured for etching, deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), oxidation, or any other suitable chamber used in manufacturing semiconductor devices.

[0033]

[0045] Figure 2A is a top view 100A of an electronic device according to one or more embodiments. Figure 2B is an enlarged cross-sectional view 100B of the device taken along region 106 shown in Figure 2A. Referring to Figures 1 and 2B, a method 10 of forming device 100 begins in step 12 by forming a memory stack 105 on a substrate 101.

[0034]

[0046] In some embodiments, the substrate 101 may be a bulk semiconductor substrate. As used herein, the term "bulk semiconductor substrate" refers to a substrate in which the entire substrate is made of a semiconductor material. A bulk semiconductor substrate may include any suitable semiconductor material and / or combination of semiconductor materials for forming a semiconductor structure. For example, the semiconductor layer may be crystalline silicon (e.g., Si <100> or Si <111> The semiconductor substrate 101 may comprise one or more materials such as silicon oxide, strained silicon, silicon germanium, doped or undoped polysilicon, doped or undoped silicon wafers, patterned or unpatterned wafers, doped silicon, germanium, gallium arsenide, or other suitable semiconductor materials. In some embodiments, the semiconductor material is silicon (Si). In one or more embodiments, the semiconductor substrate 101 comprises a semiconductor material, such as silicon (Si), carbon (C), germanium (Ge), silicon germanium (SiGe), germanium tin (GeSn), other semiconductor materials, or any combination thereof. In one or more embodiments, the substrate 101 comprises one or more of silicon (Si), germanium (Ge), gallium (Ga), arsenic (As), or phosphorus (P). Although several examples of materials that can form the substrate are described, any material that can serve as a foundation upon which passive and active electronic devices (e.g., transistors, memory, capacitors, inductors, resistors, switches, integrated circuits, amplifiers, optoelectronic devices, or any other electronic device) can be constructed is within the spirit and scope of the present disclosure.

[0035]

[0047] In some embodiments, the semiconductor material can be a doped material, such as n-type doped silicon (n-Si) or p-type doped silicon (p-Si). In some embodiments, the substrate 101 can be doped using any suitable process, such as an ion implantation process. As used herein, the term "n-type" refers to a semiconductor made by doping an intrinsic semiconductor with an electron donor element during fabrication. The term n-type comes from the negative charge of electrons. In n-type semiconductors, electrons are the majority carriers and holes are the minority carriers. As used herein, the term "p-type" refers to the positive charge of wells (or holes). In contrast to n-type semiconductors, p-type semiconductors have a hole concentration that is greater than the electron concentration. In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers. In one or more embodiments, the dopant is selected from one or more of boron (B), gallium (Ga), phosphorus (P), arsenic (As), other semiconductor dopants, or combinations thereof.

[0036]

[0048] 2A and 2B, the memory stack 105 in the illustrated embodiment includes a plurality of alternating first and second material layers 108, 116. While the memory stack 105 shown in FIG. 2B includes eight pairs of alternating first and second material layers 108, 116, those skilled in the art will recognize that this is for illustrative purposes only. The memory stack 105 may include any number of alternating first and second material layers 108, 116. For example, in some embodiments, the memory stack 105 includes 192 pairs of alternating first and second material layers 108, 116. In other embodiments, the memory stack 105 includes more than 50 pairs of alternating first material layers 108 and second material layers 116, or more than 100 pairs of alternating first material layers 108 and second material layers 116, or more than 300 pairs of alternating first material layers 108 and second material layers 116.

[0037]

[0049] In one or more embodiments, sequential deposition is used to form multiple active area regions, and in one or more embodiments, films of alternating layers of oxide-polysilicon, polysilicon-nitride, oxide-nitride, silicon-silicon germanium, etc. are deposited.

[0038]

[0050] In one or more embodiments, the first material layer 108 and the second material layer 116 independently comprise insulating materials. The second layer 116 may comprise a material that has etch selectivity with respect to the first layer 108, such that the second layer 116 can be removed without substantially affecting the first layer 108. In one or more embodiments, the first layer 108 comprises silicon (Si). In one or more embodiments, the second layer 116 comprises silicon germanium (SiGe). In one or more embodiments, the first layer 108 and the second layer 116 are deposited by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

[0039]

[0051] The individual alternating layers can be formed to any suitable thickness. In some embodiments, the thickness of each second layer 116 is approximately equal. In one or more embodiments, each second layer 116 has a second layer thickness. In some embodiments, the thickness of each first layer 108 is approximately equal. When used in this sense, approximately equal thicknesses are within ±5% of each other. In one or more embodiments, the first layers 108 have thicknesses in the range of about 0.5 nm to about 30 nm, including about 1 nm, about 3 nm, about 5 nm, about 7 nm, about 10 nm, about 12 nm, about 15 nm, about 17 nm, about 20 nm, about 22 nm, about 25 nm, about 27 nm, and about 30 nm. In one or more embodiments, the first layers 108 have thicknesses in the range of about 0.5 nm to about 40 nm. In one or more embodiments, second layer 116 has a thickness in the range of about 0.5 nm to about 30 nm, including about 1 nm, about 3 nm, about 5 nm, about 7 nm, about 10 nm, about 12 nm, about 15 nm, about 17 nm, about 20 nm, about 22 nm, about 25 nm, about 27 nm, and about 30 nm. In one or more embodiments, second layer 116 has a thickness in the range of about 0.5 to about 40 nm.

[0040]

[0052] 1 and 2A-2B, in step 14, a plurality of openings 102a, 102b, 102c are formed in memory stack 105, extending from the top surface of memory stack 105 to substrate 101. In some embodiments, the plurality of openings 102a, 102b, 102c extend into substrate 101.

[0041]

[0053] As used in this regard, the term "opening" refers to any intentional surface irregularity. Suitable examples of openings include, but are not limited to, trenches having a top, two sidewalls, and a bottom. The openings can have any suitable aspect ratio (ratio of feature width to feature depth). In some embodiments, the aspect ratio is about 5:1, about 10:1, about 15:1, about 20:1, about 25:1, about 30:1, about 35:1, or about 40:1 or greater.

[0042]

[0054] In one or more embodiments, the plurality of openings 102 a, 102 b, 102 c may be formed by any suitable means known to those skilled in the art. In some embodiments, the plurality of openings 102 a, 102 b, 102 c may be formed by etching. In some embodiments, the plurality of openings 102 a, 102 b, 102 c may include one or more of at least one deep trench isolation opening 102 b, at least one wordline opening 102 a, and at least one P-substrate opening 102 c.

[0043]

[0055] The plurality of openings 102a, 102b, 102c may have any suitable diameter known to those skilled in the art. In some embodiments, the plurality of openings have a diameter O in the range of 50 nm to 75 nm. D It has the following characteristics.

[0044]

[0056] FIG. 2B is an enlarged cross-sectional view 100B taken along region 106, showing two adjacent openings 102a and 102c.

[0045]

[0057] 1 and 2A-2B, in one or more embodiments, in step 16, an oxide layer 104 is deposited in each of the at least one deep trench isolation opening 102b, the at least one wordline opening 102c, and the at least one P substrate opening 102a. The oxide layer 104 may comprise any suitable oxide material known to those skilled in the art. In some embodiments, the oxide layer 104 comprises one or more of silicon oxide (SiO), aluminum oxide (AlO), carbon, and nitride. Thus, in some embodiments, the oxide layer is an oxycarbide layer. In other embodiments, the oxide layer may be an oxycarbonitride layer. In one or more embodiments, the oxide layer 104 is thick enough to shield the underlying silicon surface from selective epitaxial growth after any chemical or hydrogen reduction prior to the selective epitaxial growth, yet thin enough not to fill pores so that it can be isotropically removed. In one or more embodiments, the oxide layer 104 has a thickness in the range of 3 nm to 30 nm.

[0046]

[0058] The oxide layer is selectively removed from the P substrate opening 102c in step 18. The oxide layer 104 may be selectively removed by any suitable process known to those skilled in the art.

[0047]

[0059] 1 and 3A-3B, an epitaxial layer 120 is formed in the P substrate opening 102c at step 20. The epitaxial layer 120 may be formed by any suitable process known to those skilled in the art.

[0048]

[0060] In one or more embodiments, epitaxial layer 120 is formed by selectively growing an epitaxial layer in P substrate opening 102c. While not intending to be bound by theory, it is believed that the sidewalls and bottom of P substrate opening 102c all contain single-crystal silicon and single-crystal silicon germanium, thereby enabling good crystalline quality from the epitaxial growth. In some embodiments, epitaxial layer 120 is a polysilicon layer and is formed by growing a polysilicon layer in the P substrate opening. In one or more embodiments, polysilicon can be deposited everywhere (on the silicon in the P substrate holes and on the oxide layer in the wordline openings and deep trench isolation openings), and then the polysilicon is removed from the wordline openings and deep trench isolation openings when ready for processing.

[0049]

[0061] In some embodiments, epitaxial layer 120 has a thickness in the range of 10 nm to 25 nm. In one or more embodiments, epitaxial layer 120 does not completely fill P substrate opening 102c.

[0050]

[0062] In some embodiments, a polysilicon layer is deposited into each of the deep trench isolation openings, the wordline openings, and the P-substrate openings to form epitaxial layer 120, and then the polysilicon layer is selectively removed from the deep trench isolation openings and the wordline openings but not from the at least one P-substrate opening. In one or more embodiments, the polysilicon layer may then be recrystallized to form epitaxial layer 102 in at least one P-substrate opening 102c.

[0051]

[0063] 1, 4A, and 4B, in step 22, a high-k layer 126 may be deposited in the P substrate opening 102c on the top surface of the epitaxial layer 120. The high-k layer 126 may include any suitable high-k material known to those skilled in the art. In one or more embodiments, the high-k layer includes one or more of aluminum oxide (Al2O3), hafnium oxide (HfO2), zirconium oxide (ZrO2), titanium oxide (TiO2), and tantalum oxide (Ta2O5). In a specific embodiment, the high-k layer includes aluminum oxide (Al2O3).

[0052]

[0064] 1, in step 24, the deep trench isolation openings 102b are widened so that the diameter of the deep trench isolation openings 102b is in the range of 50 nm to 80 nm. In one or more embodiments, widening the deep trench isolation openings 102b forms a semiconductor isolation bridge between adjacent deep trench isolation openings 102b. And The physical silicon connections between all these channels are electrically isolated, even when the word line gate is energized and each individual channel is conducting.

[0053]

[0065] In one or more embodiments, in step 26, an oxide layer 104 is deposited in the enlarged deep trench isolation opening 102b. The oxide layer 104 may comprise any suitable oxide material known to those skilled in the art. In some embodiments, the oxide layer 104 comprises one or more of silicon oxide (SiO), aluminum oxide (AlO), carbon, and nitride. Thus, in some embodiments, the oxide layer is an oxycarbide layer. In other embodiments, the oxide layer may be an oxycarbonitride layer.

[0054]

[0066] In step 28, a nitride layer 124 is deposited in the deep trench isolation opening 102b over the oxide layer 104. The nitride layer may comprise any suitable nitride material known to those skilled in the art. In one or more embodiments, the nitride layer 124 comprises silicon nitride (SiN).

[0055]

[0067] 1 and 5A-5C, in step 30, the oxide liner 104 is removed from the word line openings 102a to form openings 130 for the word line gates.

[0056]

[0068] In step 32, word line gates are then formed. In one or more embodiments, forming the word line gates includes recessing second material layer 116 to expose epitaxial layer 120 and form recessed regions 132 having a first width w1. Referring to Figure 5C, in one or more embodiments, first material layer 108 is then etched to increase the width of recessed region 132 to a second width w2 that is greater than first width w1.

[0057]

[0069] 6A and 6B, a gate oxide layer 132 is deposited to partially fill the recessed region 132. In one or more embodiments, a gate electrode layer 134 is deposited over the gate oxide layer 132 to fill the recessed region 132.

[0058]

[0070] The gate oxide layer 132 may comprise any suitable material known to those skilled in the art. In some embodiments, the gate oxide layer 132 comprises one or more thermally grown or deposited materials. In one or more embodiments, the gate oxide layer 132 comprises one or more of silicon oxide (SiO), aluminum oxide (AlO), hafnium oxide (HfO), and zirconium oxide (ZrO).

[0059]

[0071] The gate electrode layer 134 may comprise any suitable material known to those skilled in the art. In one or more embodiments, the gate electrode layer 134 may comprise one or more of a metal, a metal nitride, doped polysilicon, and undoped polysilicon. In particular embodiments, the gate electrode layer 134 comprises one or more of tungsten (W), cobalt (Co), molybdenum (Mo), ruthenium (Ru), titanium nitride (TiN), tantalum nitride (TaN), and N-doped polysilicon.

[0060]

[0072] An additional embodiment of the present disclosure is directed to a processing tool 900 for forming the described memory devices and methods, as shown in Figure 7. The cluster tool 900 includes at least one central transfer station 921, 931 having multiple sides. Robots 925, 935 are disposed within the central transfer station 921, 931 and configured to move a robot blade and wafer to each of the multiple sides.

[0061]

[0073] The cluster tool 900 includes multiple processing chambers, also referred to as process stations, 902, 904, 906, 908, 910, 912, 914, 916, and 918, connected to a central transfer station. The various processing chambers provide distinct processing regions separate from adjacent processing stations. The processing chambers may be any suitable chamber, including, but not limited to, a pre-clean chamber, a buffer chamber, one or more transfer spaces, a wafer orientation / degassing chamber, a cryogenic cooling chamber, a deposition chamber, an annealing chamber, an etch chamber, a selective etch chamber, an epitaxial growth chamber, etc. The specific arrangement of processing chambers and components may vary depending on the cluster tool and should not be construed as limiting the scope of the present disclosure.

[0062]

[0074] 7, a factory interface 950 is connected to the front of the cluster tool 900. The factory interface 950 includes a loading chamber 954 and an unloading chamber 956 on the front 951 of the factory interface 950. Although the loading chamber 954 is shown on the left and the unloading chamber 956 is shown on the right, one skilled in the art will understand that this represents only one possible configuration.

[0063]

[0075] The size and shape of the loading chamber 954 and unloading chamber 956 can vary depending on, for example, the substrates being processed in the cluster tool 900. In the illustrated embodiment, the loading chamber 954 and unloading chamber 956 are sized to hold a wafer cassette with multiple wafers arranged within the cassette.

[0064]

[0076] The robot 952 resides within the factory interface 950 and can move between a loading chamber 954 and an unloading chamber 956. The robot 952 can transfer wafers from a cassette in the loading chamber 954 through the factory interface 950 to a load lock chamber 960. The robot 952 can also transfer wafers from the load lock chamber 962 through the factory interface 950 to a cassette in the unloading chamber 956. As will be appreciated by those skilled in the art, the factory interface 950 can include multiple robots 952. For example, the factory interface 950 can include a first robot that transfers wafers between the loading chamber 954 and the load lock chamber 960 and a second robot that transfers wafers between the load lock chamber 962 and the unloading chamber 956.

[0065]

[0077] The illustrated cluster tool 900 has a first section 920 and a second section 930. The first section 920 is connected to a factory interface 950 through load lock chambers 960 and 962. The first section 920 includes a first transfer chamber 921 with at least one robot 925 disposed therein. The robot 925 is also referred to as a robotic wafer transport mechanism. The first transfer chamber 921 is centrally located relative to the load lock chambers 960 and 962, the processing chambers 902, 904, 916, and 918, and the buffer chambers 922 and 924. In some embodiments, the robot 925 is a multi-arm robot capable of independently moving multiple wafers at a time. In some embodiments, the first transfer chamber 921 includes multiple robotic wafer transfer mechanisms. The robot 925 in the first transfer chamber 921 is configured to move wafers between chambers surrounding the first transfer chamber 921. Individual wafers are carried on a wafer transport blade located at the distal end of the first robotic mechanism.

[0066]

[0078] After processing the wafer in the first section 920, the wafer may pass through a pass-through chamber to the second section 930. For example, chambers 922, 924 may be unidirectional or bidirectional pass-through chambers. The pass-through chambers 922, 924 may be used, for example, to cryogenically cool the wafer before processing in the second section 930, or to allow wafer cooling or post-processing before returning to the first section 920.

[0067]

[0079] A system controller 990 is in communication with the first robot 925, the second robot 935, the first plurality of processing chambers 902, 904, 916, 918, and the second plurality of processing chambers 906, 908, 910, 912, 914. The system controller 990 may be any suitable component capable of controlling the processing chambers and robots. For example, the system controller 990 may be a computer including a central processing unit (CPU), memory, appropriate circuitry, and storage.

[0068]

[0080] The processes may generally be stored in the memory of the system controller 990 as software routines that, when executed by a processor, cause the processing chamber to perform the processes of the present disclosure. The software routines may be stored and / or executed by a second processor (not shown) located remotely from the hardware controlled by the processor. Some or all of the methods of the present disclosure may also be performed in hardware. Thus, the processes may be implemented in software and executed using a computer system, for example, in hardware as an application-specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls chamber operation to perform the processes.

[0069]

[0081] Spatially relative terms such as "beneath," "below," "lower," "above," and "upper" may be used herein for ease of description to describe the relationship of one element or feature to another element or feature, as shown in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown. For example, if the device in the figures were turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an upper and lower orientation. The device may be in other orientations (such as rotated 90 degrees or other orientations), and the spatially relative descriptions used herein will be interpreted accordingly.

[0070]

[0082] In the context of describing the materials and methods discussed herein (particularly in the context of the claims that follow), the use of "a" and "an," "the," and similar referents should be construed to encompass both the singular and the plural unless otherwise indicated herein or clearly contradicted by context. The recitation of ranges of values herein is merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or clearly contradicted by context. The use of any and all examples or exemplary language (e.g., "such as") provided herein is intended merely to better describe the materials and methods and does not limit the scope unless specifically claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the disclosed materials and methods.

[0071]

[0083] Throughout this specification, references to "one embodiment," "a particular embodiment," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of the phrases "in one or more embodiments," "a particular embodiment," "in one embodiment," or "an embodiment" in various places throughout this specification do not necessarily refer to the same embodiment of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0072]

[0084] Although the disclosure herein has been described with reference to particular embodiments, those skilled in the art will recognize that the described embodiments are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed method and apparatus without departing from the spirit and scope of the present disclosure. Accordingly, the present disclosure includes modifications and variations that come within the scope of the appended claims and their equivalents.

Claims

1. 1. A method of forming a semiconductor memory device, comprising: forming a memory stack including alternating layers of a first material and a second material; Etching a plurality of openings in the memory stack to form at least one deep trench isolation opening, at least one word line opening, and at least one P-substrate opening; depositing a first oxide layer in each of the at least one deep trench isolation opening, the at least one word line opening, and the at least one P substrate opening; selectively removing the first oxide layer from the at least one P substrate opening; forming an epitaxial layer in the at least one P substrate opening; widening the at least one deep trench isolation opening; depositing a second oxide layer in the at least one deep trench isolation opening; depositing a nitride layer on the second oxide layer in the at least one deep trench isolation opening; removing the first oxide layer from the word line openings; forming a word line gate in the at least one word line opening; A method comprising:

2. 2. The method of claim 1, wherein forming the epitaxial layer comprises selectively growing the epitaxial layer in the P substrate opening.

3. 2. The method of claim 1, wherein forming the epitaxial layer comprises selectively growing a polysilicon layer in the P substrate opening.

4. 10. The method of claim 1, further comprising depositing a high dielectric constant layer in the P substrate opening on a top surface of the epitaxial layer.

5. The high dielectric constant layer is made of aluminum oxide (Al ２ O ３ ), hafnium oxide (HfO ２ ), zirconium oxide (ZrO ２ ), titanium oxide (TiO ２ ), and tantalum oxide (Ta ２ O ５ 5. The method of claim 4, comprising one or more of:

6. forming the word line gate; recessing the second layer of material to expose the epitaxial layer and to form a recessed region having a first width; etching the first material layer to increase the width of the recessed region to a second width greater than the first width; depositing a gate oxide layer to partially fill the recessed region; depositing a gate electrode layer over the gate oxide layer to fill the recessed region; The method of claim 1 , comprising:

7. The method of claim 6 , wherein the gate electrode layer comprises one or more of a metal, a metal nitride, doped polysilicon, and undoped polysilicon.

8. 8. The method of claim 7, wherein the gate electrode layer comprises one or more of tungsten (W), cobalt (Co), molybdenum (Mo), ruthenium (Ru), titanium nitride (TiN), tantalum nitride (TaN), and N-type doped polysilicon.

9. 10. The method of claim 1, wherein the first layer of material and the second layer of material independently comprise one or more of silicon (Si) and silicon germanium (SiGe).

10. The first oxide layer and the second oxide layer are independently silicon oxide (SiO ２ ), aluminum oxide (Al ２ O ３） 10. The method of claim 1, wherein the silicon dioxide comprises one or more of: silicon dioxide, silicon dioxide, silicon dioxide nanoparticles ...

11. 10. The method of claim 1, wherein widening the at least one deep trench isolation opening forms a bridge between adjacent deep trench isolation openings.

12. 1. A method of forming a semiconductor memory device, comprising: depositing a first oxide layer in each of at least one deep trench isolation opening, at least one word line opening, and at least one P-substrate opening in a memory stack, the memory stack including alternating layers of a first material layer and a second material layer; selectively removing the first oxide layer from the at least one P substrate opening; forming an epitaxial layer in the P substrate opening; forming a bridge between adjacent deep trench isolation openings; depositing a second oxide layer in the at least one deep trench isolation opening; depositing a nitride layer on the second oxide layer in the at least one deep trench isolation opening; depositing a high dielectric constant layer on an upper surface of the epitaxial layer in the P substrate opening; removing the first oxide layer from the word line openings; forming a word line gate in the at least one word line opening; A method comprising:

13. The high dielectric constant layer is made of aluminum oxide (Al ２ O ３ ), hafnium oxide (HfO ２ ), zirconium oxide (ZrO ２ ), titanium oxide (TiO ２ ), and tantalum oxide (Ta ２ O ５ 13. The method of claim 12, comprising one or more of:

14. forming the word line gate; recessing the second layer of material to expose the epitaxial layer and to form a recessed region having a first width; etching the first material layer to increase the width of the recessed region to a second width greater than the first width; depositing a gate oxide layer to partially fill the recessed region; depositing a gate electrode layer over the gate oxide layer to fill the recessed region; 13. The method of claim 12, comprising:

15. 15. The method of claim 14, wherein the gate electrode layer comprises one or more of a metal, a metal nitride, doped polysilicon, and undoped polysilicon.

16. 16. The method of claim 15, wherein the gate electrode layer comprises one or more of tungsten (W), cobalt (Co), molybdenum (Mo), ruthenium (Ru), titanium nitride (TiN), tantalum nitride (TaN), and N-type doped polysilicon.

17. 13. The method of claim 12, wherein the first layer of material and the second layer of material independently comprise one or more of silicon (Si) and silicon germanium (SiGe).

18. The first oxide layer and the second oxide layer are independently silicon oxide (SiO ２ ), aluminum oxide (Al ２ O ３ ), carbon, and nitride.

19. forming the epitaxial layer Selectively growing the epitaxial layer in the P substrate opening; and / or depositing a polysilicon layer in each of the at least one deep trench isolation opening, the at least one word line opening, and the at least one P-substrate opening, then selectively removing the polysilicon layer from the at least one deep trench isolation opening and the at least one word line opening, and then recrystallizing the polysilicon layer remaining in the at least one P-substrate opening to form the epitaxial layer in the at least one P-substrate opening; 13. The method of claim 12, comprising:

20. 13. The method of claim 12, wherein forming the epitaxial layer comprises selectively growing the epitaxial layer in the P substrate opening.

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