Light-emitting device manufacturing method

Abstract

To provide a light-emitting device with higher luminance.SOLUTION: A method for manufacturing a light-emitting device including (i) one or two or more light-emitting elements comprising a semiconductor laminate having a first surface, a second surface on the opposite side of the first surface, and a side surface between the first surface and the second surface, and an electrode arranged on the second surface and (ii) a light reflective resin member covering the second surface of the light-emitting element so as to expose a part of the electrode includes: a preparing step of preparing the light-emitting element; (b) a light reflective resin arranging step of arranging a light reflective resin on a support; (c) a light-emitting element arranging step of making the electrode face the light reflective resin and arranging the light-emitting element on the light reflective resin; and (d) an electrode embedding step of softening the light reflective resin by heating and embedding the electrode into the light reflective resin with the side surface of the semiconductor laminate exposed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a light emitting device. [Background technology]

[0002] BACKGROUND ART Light-emitting devices including light-emitting elements are known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-29512 Summary of the Invention [Problem to be solved by the invention]

[0004] There is a demand for such light emitting devices with higher brightness. [Means for solving the problem]

[0005] In order to achieve the above object, a method for manufacturing a light emitting device according to the present disclosure is a method for manufacturing a light emitting device including: (i) one or more light emitting elements each including a semiconductor laminate having a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and an electrode disposed on the second surface; and (ii) a light reflective resin member covering the second surface of the light emitting element so as to expose a part of the electrode, (a) a light emitting element preparation step of preparing the light emitting element; (b) a light-reflecting resin preparation step of preparing a light-reflecting resin disposed on a support; (c) a light-emitting element arranging step of arranging the light-emitting element on the light-reflective resin with the electrode facing the light-reflective resin; (d) an electrode embedding step of softening the light-reflective resin by heating it, and embedding the electrode in the light-reflective resin in a state where the side surface of the semiconductor laminate is exposed; Includes. [Effects of the Invention]

[0006] In this way, a light emitting device with higher brightness can be manufactured. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view showing a light emitting device according to Embodiment 1. FIG. [Figure 2A] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 2B] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 2C] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 2D] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 2E] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 2F] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 2G] 2A to 2C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 3] 10 is a schematic cross-sectional view showing a light emitting device according to Modification 2 of Embodiment 1. FIG. [Figure 4] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Modification 2 of Embodiment 1. [Figure 5] FIG. 10 is a schematic cross-sectional view showing a light emitting device according to a second embodiment. [Figure 6A] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6B] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6C] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6D]5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6E] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6F] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6G] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 6H] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 7] FIG. 10 is a schematic cross-sectional view showing a light emitting device according to a third embodiment. [Figure 8A] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8B] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8C] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8D] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8E] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8F] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8G] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. [Figure 8H] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Embodiment 3. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. Note that the manufacturing method of a light-emitting device described below is intended to embody the technical concept of the present disclosure, and unless otherwise specified, the present disclosure is not limited to the following. In each drawing, components having the same function may be designated by the same reference numeral. For convenience, the embodiments may be shown separately to facilitate explanation or understanding of the main points. However, partial substitution or combination of the configurations shown in different embodiments is possible. In the following embodiments, descriptions of matters common to the above-described embodiments will be omitted, and only differences will be described. In particular, similar effects resulting from similar configurations will not be mentioned in each embodiment. The size and positional relationship of components shown in each drawing may be exaggerated for clarity. In addition, end views showing only the cut surface may be used as cross-sectional views.

[0009] <Embodiment 1> FIG. 1 shows a light-emitting device 100 manufactured by the manufacturing method of the first embodiment of the present disclosure. The manufacturing method of the light-emitting device 100 of the first embodiment of the present disclosure is a manufacturing method of the light-emitting device 100 including: (i) a semiconductor laminate 10 including a substrate 15 and a semiconductor layer 16, the semiconductor laminate 10 including, for example, a first surface 11 serving as a light-emitting surface, a second surface 12 opposite the first surface 11, and a side surface 13 between the first surface 11 and the second surface 12; and an electrode 20 disposed on the second surface 12 of the semiconductor laminate 10; and (ii) a light-reflective resin member 30 (also referred to as a first light-reflective resin member for convenience) covering the second surface 12 of the light-emitting element 1 so as to expose a portion of the electrode 20, for example, a top surface 26. The light-emitting device 100 may further include (iii) a light-transmitting resin member 40 covering the first surface 11 and the side surface 13 of the semiconductor laminate 10. The manufacturing method of the light-emitting device of the first embodiment of the present disclosure will be described with reference to FIGS. 2A to 2G.

[0010] A method for manufacturing a light emitting device according to an embodiment of the present disclosure includes: (a) a light emitting element preparation step of preparing a light emitting element 1; (b) a light-reflecting resin preparation step of preparing a light-reflecting resin 31 (for convenience, also referred to as a first light-reflecting resin) disposed on a support 45; (c) a light-emitting element arranging step of arranging the light-emitting element 1 on the light-reflective resin 31 with the electrode 20 facing the light-reflective resin 31; (d) an electrode embedding step of softening the light-reflective resin 31 by heating, and embedding the electrode 20 in the light-reflective resin 31 while exposing the side surface 13 of the semiconductor laminate 10; Includes. Each step will be described in detail below.

[0011] (a) Light-emitting element preparation process In this preparation step, a light-emitting element 1 is prepared. In this embodiment, the light-emitting element 1 includes a semiconductor laminate 10 having a substrate 15 and a semiconductor layer 16, and an electrode 20. The semiconductor laminate 10 includes a first surface 11 that is a light-emitting surface, a second surface 12 opposite to the first surface 11, and a side surface 13 between the first surface 11 and the second surface 12. The electrode 20 is disposed on the second surface 12 of the semiconductor laminate 10.

[0012] The semiconductor stack 10 of the light-emitting element 1 includes a substrate 15 made of, for example, sapphire or gallium nitride, and a semiconductor layer 16 disposed on the substrate 15. The semiconductor layer 16 includes an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer sandwiched between them. The semiconductor stack 10 does not necessarily have to include the substrate 15. The semiconductor stack 10 may have, for example, a double heterostructure, a single quantum well structure (SQW), or a multiple quantum well structure (MQW). The light-emitting layer is capable of emitting visible light or ultraviolet light. The light-emitting layer is capable of emitting visible light ranging from blue to red. Examples of the semiconductor stack 10 including such a light-emitting layer include In x Al y Ga 1-x-yN (0≦x, 0≦y, x+y<1). The semiconductor stack 10 can include at least one light-emitting layer capable of emitting the above-described light. For example, the semiconductor stack 10 may have a structure including one or more light-emitting layers between an n-type semiconductor layer and a p-type semiconductor layer, or may have a structure in which a structure including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in that order is repeated multiple times. When the semiconductor stack 10 includes multiple light-emitting layers, the light-emitting layers may have different emission peak wavelengths, or may have light-emitting layers with the same emission peak wavelength. Note that the same emission peak wavelength may vary by several nanometers. The combination of emission peak wavelengths can be selected appropriately. For example, when the semiconductor stack 10 includes two light-emitting layers, the light-emitting layers can be selected from combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. The light-emitting layer may include a plurality of active layers having different emission peak wavelengths, or may include a plurality of active layers having the same emission peak wavelength.

[0013] (b) Light reflective resin preparation process As shown in FIG. 2A , light-reflective resin 31 is prepared by placing a semi-cured light-reflective resin sheet on support 45. For example, light-reflective resin 31 is prepared by attaching a semi-cured light-reflective resin sheet prepared in advance to support 45. The light-reflective resin sheet can be attached using, for example, a vacuum laminator. Specifically, the pressure is reduced to a predetermined vacuum level, and pressure is applied by pressing with a diaphragm. The placement of light-reflective resin 31 in the light-reflective resin preparation step is not limited to attaching a light-reflective resin sheet. For example, uncured light-reflective resin may be applied to support 45, the solvent may be evaporated, and the semi-cured light-reflective resin 31 may be placed. Examples of methods for placing light-reflective resin 31 include roll coating, spraying, and compression molding. Alternatively, light-reflective resin 31 placed on support 45 can be purchased.

[0014] Here, semi-cured light-reflective resin refers to light-reflective resin in a so-called B-stage state. The B-stage state refers to a state in which the curing reaction has partially progressed but is not yet complete. The semi-cured light-reflective resin can be obtained, for example, by heating uncured light-reflective resin to a first temperature. The first temperature can be a temperature in the range of 100 to 160°C. The heating time can be, for example, 10 to 120 minutes.

[0015] In the light-reflecting resin preparation step, an adhesive layer may be provided between the support 45 and the light-reflecting resin 31. As the adhesive layer, for example, a double-sided tape can be used.

[0016] The light-reflecting resin may be, for example, a resin containing a light diffusing agent such as titanium oxide, silicon oxide, aluminum oxide, or zinc oxide. Examples of materials that can be used for such a resin include silicone resin, epoxy resin, and acrylic resin.

[0017] The thickness of the light-reflective resin 31 may be the same as the thickness t of the electrode 20 of the light-emitting element 1, or may be thicker than the thickness t. The thickness of the light-reflective resin 31 is preferably the same as the thickness t of the electrode 20 of the light-emitting element 1. If the thickness of the light-reflective resin 31 is thicker than the thickness t of the electrode 20 of the light-emitting element 1, the top surface 26 of the electrode 20 can be exposed by removing a portion of the light-reflective resin member 30 in the terminal electrode formation step described below.

[0018] (c) Light-emitting element arrangement process 2B, light-emitting element 1 is placed on light-reflective resin 31 with electrode 20 facing light-reflective resin 31. In other words, light-emitting element 1 is placed on light-reflective resin 31 so that light-reflective resin 31 and top surface 26 of electrode 20 are in contact with each other.

[0019] The method for arranging the light-emitting elements 1 on the light-reflective resin 31 is not particularly limited, and the light-emitting elements 1 may be arranged one by one in order, or a plurality of light-emitting elements 1 may be arranged together. For example, the light-emitting elements 1 can be arranged on the light-reflective resin 31 using a general-purpose die bonder device.

[0020] (d) Electrode embedding process The light-reflective resin 31 is softened by heating, and as shown in Fig. 2C, the electrode 20 is embedded in the light-reflective resin 31 with the side surface 13 of the semiconductor laminate 10 exposed. In this electrode-embedding step, the light-reflective resin 31 is in a semi-cured state, and therefore is prevented from creeping up to the side surface 13 of the semiconductor laminate 10. By preventing the light-reflective resin 31 from creeping up, the light emitted from the side surface 13 of the semiconductor laminate 10 is less likely to be blocked by the light-reflective resin 31, and therefore a light-emitting device with higher brightness can be obtained.

[0021] The heating is carried out, for example, at a second temperature that is lower than the first temperature in the light-reflecting resin preparation step. The second temperature may be in the range of 70 to 130° C. The heating time may be, for example, 10 minutes or longer.

[0022] In the electrode embedding step, for example, a load is applied to the light-emitting element 1, thereby embedding the electrode 20 in the light-reflective resin 31. The method of applying the load is not particularly limited as long as it is a method that can press the light-emitting element 1 into the light-reflective resin 31. For example, a press or a vacuum laminator (e.g., a diaphragm-type vacuum laminator) can be used to apply a load to the light-emitting element 1 toward the light-reflective resin 31. When a diaphragm-type vacuum laminator is used, the light-reflective resin plate on which the light-emitting element 1 is disposed is pressed to embed the electrode 20 in the light-reflective resin 31. Specifically, for example, the light-reflective resin plate on which the light-emitting element 1 is disposed is placed on a stage heated to 70 to 130°C, and a diaphragm is used to press the light-reflective resin plate, applying a load of 0.1 to 1.0 MPa for 10 to 120 seconds, for example.

[0023] (e) First curing step The light-reflecting resin 31 is heated at a third temperature to be cured. In this embodiment, the cured light-reflecting resin 31 is also referred to as a light-reflecting resin member 30.

[0024] The third temperature for curing light-reflecting resin 31 is set appropriately based on the curing temperature of light-reflecting resin 31. For example, in the case of light-reflecting resin 31 containing a thermosetting silicone resin, epoxy resin, or acrylic resin, the third temperature may be in the range of 140 to 200° C. The heating time may be, for example, 1 to 10 hours.

[0025] (f) Transparent resin placement process As shown in FIG. 2D , a light-transmitting resin 41 is placed on the light-reflective resin member 30 so as to cover the first surface 11 and side surface 13 of the light-emitting element 1. For example, a sheet-like light-transmitting resin 41 is attached so as to cover the light-emitting element 1. A vacuum laminator, for example, can be used to attach the light-transmitting resin 41. Specifically, the sheet-like light-transmitting resin 41 is placed on the first surface 11 of the light-emitting element 1, the pressure is reduced to a predetermined vacuum level, and the resin is pressed down with a diaphragm to apply pressure.

[0026] The translucent resin 41 may be a translucent resin in an A-stage state. Here, the A-stage state refers to an uncured state. The uncured state refers to a state before the curing reaction has progressed, i.e., a state before an operation for progressing the curing reaction is performed. Examples of operations for progressing the curing reaction include heating and light irradiation. Note that the curing reaction may progress slightly before the operation for progressing the curing reaction, and the uncured state also includes such a state. Furthermore, the A-stage state is not a liquid state but a state that does not have fluidity. For example, a liquid resin material containing a solvent such as cyclohexane is applied to a support, and then most of the solvent is volatilized to make the resin non-flowable on the support, which can be used as a translucent resin in an A-stage state.

[0027] The light-transmitting resin 41 may be, for example, a thermosetting resin such as a silicone resin, an epoxy resin, or an acrylic resin.

[0028] (g) Second curing process The light-transmitting resin 41 is heated and cured at a fourth temperature. In this embodiment, the cured light-transmitting resin 41 is also referred to as a light-transmitting resin member 40.

[0029] The fourth temperature for curing the light-transmitting resin 41 is set appropriately based on the curing temperature of the light-transmitting resin 41. For example, in the case of light-transmitting resin 41 containing a thermosetting silicone resin, epoxy resin, or acrylic resin, the fourth temperature may be a temperature in the range of 140 to 200° C. The heating time may be, for example, 1 to 10 hours.

[0030] (h) Terminal electrode formation process As shown in FIG. 2E, the support 45 is removed, and another support 46 is placed on the light-transmitting resin member 40. An adhesive layer may be placed between the support 46 and the light-transmitting resin member 40. For example, double-sided tape may be used as the adhesive layer. Note that FIG. 2E is shown upside down from each of FIGS. 2A to 2D. Next, the surface on which the electrode 20 is present is polished, and the resin on the top surface 26 of the electrode 20 is removed. The polishing is performed, for example, by blasting. Alternatively, the light-reflective resin member 30 and a portion of the electrode 20 may be scraped off to expose a new top surface 26 of the electrode 20.

[0031] Next, a metal layer is formed on the light-reflective resin member 30 and the top surface 26 of the electrode 20. The metal layer may be formed by, for example, attaching a separately manufactured metal foil, or by sputtering, plating, or the like. The metal layer is then patterned to form the terminal electrode 23, as shown in FIG. 2F. The patterning can be performed, for example, by laser irradiation, etching, or the like.

[0032] (i) Singulation process 2G, after the terminal electrodes 23 are formed, the light-reflecting resin member 30 and the light-transmitting resin member 40 are cut between adjacent light-emitting elements 1. Next, the support 46 is removed from the light-emitting device 100.

[0033] The conditions in each of the above steps are appropriately selected depending on the light-emitting device to be manufactured. For example, the light-emitting element and the light-reflective resin are appropriately selected depending on the light-emitting device to be manufactured, and the state of the light-reflective resin and heating conditions such as the first temperature and the second temperature are set depending on the selected light-emitting element and light-reflective resin.

[0034] For example, the state of the light-reflective resin in the light-reflective resin preparation step and the heating conditions for heating in the electrode embedding step are set by referring to a database. The database stores the states of the light-reflective resin and heating conditions that, when a plurality of n types of light-emitting elements including a light-emitting element are placed on the light-reflective resin placed on a support and the light-reflective resin is heated and sunk by its own weight or pressure, can suppress the light-reflective resin from creeping up onto the side surfaces of the light-emitting element and can cause the light-reflective resin to sink so as to wet the second surface of the light-emitting element.

[0035] The database may store, for multiple m types of light-reflective resins including a light-reflective resin, a state of the light-reflective resin that can cause the light-reflective resin to sink so as to wet the second surfaces of the light-emitting elements while suppressing creeping up onto the side surfaces of the light-emitting elements when multiple n types of light-emitting elements are placed on the light-reflective resin placed on a support and the light-reflective resin is heated to sink under its own weight or a load, and the heating conditions. By referring to the database, the light-reflective resin to be placed on the support can be selected, and the state of the light-reflective resin and the heating conditions can be set.

[0036] In the database, the heating conditions for at least some of the light-reflecting resins may include a first temperature at which the light-reflecting resins are semi-cured, and a second temperature at which the semi-cured light-reflecting resins are softened.

[0037] The database may further store information relating to the type and state of the light-transmitting resin, the third temperature, and the fourth temperature.

[0038] In this manner, for example, a light-emitting device 100 can be manufactured, each including one light-emitting element 1, with the first surface 11 and side surface 13 of the light-emitting element 1 covered with a translucent resin member 40 of a predetermined thickness, and the second surface 12 covered with a light-reflective resin member 30.

[0039] The method for manufacturing the light emitting device of the first embodiment can be modified in various ways as described below, and various light emitting devices can be manufactured.

[0040] Variation 1 The manufacturing method of the light emitting device of Modification 1 is a manufacturing method of a light emitting device that includes a wavelength conversion member containing a phosphor that converts the wavelength of light from light emitting element 1, instead of light-transmitting resin member 40. That is, the manufacturing method of the light emitting device of Modification 1 includes a step of arranging light-reflecting resin 31, and then providing wavelength-converting resin that covers first surface 11 and side surface 13 of light emitting element 1 on light-reflecting resin 31.

[0041] Specifically, in the method for manufacturing a light emitting device according to Variation 1 of Embodiment 1, a sheet of wavelength converting resin containing phosphor particles is used instead of a sheet of light-transmitting resin. By embedding light emitting element 1 in the sheet of wavelength converting resin containing phosphor particles, a light emitting device can be manufactured in which first surface 11 and side surface 13 of semiconductor laminate 10 are covered with a wavelength converting member.

[0042] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., Y3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSiO 16(Cl2:Eu), β - sialon - based phosphors (e.g., (Si,Al)3(O,N)4:Eu), α - sialon - based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), SLA series phosphors (e.g., SrLiAl3N4:Eu), CASN series phosphors (e.g., CaAlSiN3:Eu) or SCASN series phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc. nitride - based phosphors, KSF series phosphors (e.g., K2SiF6:Mn), KSAF series phosphors (e.g., K2Si 0.99 Al 0.01 F 5.99 :Mn) or MGF series phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), etc. fluoride - based phosphors, phosphors having a perovskite structure (e.g., CsPb(F,Cl,Br,I)3), or quantum dot phosphors (e.g., CdSe, InP, AgInS2 or AgInSe2), etc. can be used. As the phosphor added to the wavelength conversion member, one type of phosphor may be used, or a plurality of types of phosphors may be used.

[0043] The KSAF series phosphor may have a composition represented by the following formula (I). M2[Si p Al q Mn r F s (I)

[0044] In formula (I), M represents an alkali metal and may contain at least K. Mn may be tetravalent Mn ions. p, q, r, and s may satisfy 0.9 ≦ p + q + r ≦ 1.1, 0 < q ≦ 0.1, 0 < r ≦ 0.2, 5.9 ≦ s ≦ 6.1. Preferably, 0.95 ≦ p + q + r ≦ 1.05 or 0.97 ≦ p + q + r ≦ 1.03, 0 < q ≦ 0.03, 0.002 ≦ q ≦ 0.02 or 0.003 ≦ q ≦ 0.015, 0.005 ≦ r ≦ 0.15, 0.01 ≦ r ≦ 0.12 or 0.015 ≦ r ≦ 0.1, 5.92 ≦ s ≦ 6.05 or 5.95 ≦ s ≦ 6.025. For example, K2[Si 0.946 Al 0.005 Mn 0.049 F 5.995 , K2[Si0.942 Al 0.008 Mn 0.050 F 5.992 ], K2[Si 0.939 Al 0.014 Mn 0.047 F 5.986 Such a KSAF-based phosphor can provide red light emission with high brightness and a narrow half-width of the emission peak wavelength.

[0045] The light emitting device according to the first modification can obtain white light by disposing a wavelength conversion member. For example, white light can be obtained by combining a light emitting element capable of emitting blue light with a wavelength conversion member containing a phosphor capable of emitting yellow light. Alternatively, a light emitting element capable of emitting blue light may be combined with a wavelength conversion member containing a phosphor capable of emitting red light (hereinafter referred to as a red phosphor) and a phosphor capable of emitting green light (hereinafter referred to as a green phosphor). A light emitting element capable of emitting blue light may also be combined with multiple wavelength conversion members. As the multiple wavelength conversion members, for example, a wavelength conversion member containing a red phosphor and a wavelength conversion member containing a green phosphor can be selected. Furthermore, a light emitting device having a light emitting element capable of emitting blue light and a translucent member containing a red phosphor may be combined with a wavelength conversion member containing a green phosphor.

[0046] As the yellow phosphor used in the wavelength conversion member, for example, the above-mentioned yttrium-aluminum-garnet phosphor is preferably used. Furthermore, as the green phosphor used in the wavelength conversion member, it is preferable to use a phosphor having a narrow half-value width of the emission peak wavelength, for example, a phosphor having a perovskite structure or a quantum dot phosphor as described above. Furthermore, as the red phosphor used in the wavelength conversion member, it is preferable to use a phosphor having a narrow half-value width of the emission peak wavelength, like the green phosphor, for example, the above-mentioned KSF phosphor, KSAF phosphor, or quantum dot phosphor.

[0047] Variation 2 FIG. 3 shows a light emitting device 200 manufactured by a manufacturing method according to Modification 2 of Embodiment 1. The manufacturing method for light emitting device 200 according to Modification 2 of Embodiment 1 is a method for manufacturing a light emitting device including a second light-reflective resin member 42 disposed on the light-transmitting resin member 40 of light emitting device 100 according to Embodiment 1. In this example, second light-reflective resin member 42 is located above first surface 11 of light emitting element 1. Furthermore, second light-reflective resin member 42 can be made of a resin containing, for example, titanium oxide, silicon oxide, aluminum oxide, or zinc oxide as a light diffusing agent. Examples of materials that can be used for such resin include silicone resin, epoxy resin, and acrylic resin.

[0048] Specifically, in the translucent resin disposing step of the manufacturing method of the light-emitting device of embodiment 1, a sheet having second light-reflective resin 43 disposed thereon is attached to the upper surface of light-transmitting resin 41 so as to cover light-emitting element 1, as shown in FIG. Second light-reflective resin 43 can be prepared by forming or purchasing a pre-cured resin and disposing it on light-transmitting resin 41, or by disposing liquid second light-reflective resin on light-transmitting resin 41 and then curing it by heating or the like. In this modification, second light-reflective resin 43 is heated and cured together with light-transmitting resin 41 in the second curing step. In this modification, the cured second light-reflective resin 43 is also referred to as second light-reflective resin member 42.

[0049] This makes it possible to manufacture a light emitting device with so-called batwing light distribution, in which light emitted upward from first surface 11 of light emitting element 1 is suppressed and light is efficiently emitted from side surface 13 of light emitting element 1.

[0050] In addition, in the manufacturing method of this variant example 2, instead of the second light-reflecting resin 43, a metal layer such as platinum, silver, rhodium, or aluminum, or a distributed Bragg reflector (DBR) may be placed on the upper surface of the light-transmitting resin 41.

[0051] Furthermore, the manufacturing method of the light emitting device of Modification 2 makes it possible to change the distance between second light-reflecting resin member 42 and first surface 11 of light emitting element 1 by changing the thickness of light-transmitting resin 41 and adjusting the embedding position of light emitting element 1 within light-transmitting resin 41. This makes it possible to manufacture light emitting devices with different bat wing light distribution characteristics.

[0052] Variation 3 The manufacturing method of variant 3 is a manufacturing method of the light-emitting device according to embodiment 1 or variants 1 and 2, in which the first curing step of curing the first light-reflective resin 31 is not performed, and in the second curing step, the first light-reflective resin 31 and the light-transmitting resin 41 are cured simultaneously.

[0053] <Embodiment 2> 5 shows a light-emitting device 300 manufactured by a manufacturing method according to embodiment 2. The manufacturing method for light-emitting device 300 according to embodiment 2 of the present disclosure is a method for manufacturing light-emitting device 300 including: (i) a light-emitting element 1 including a semiconductor laminate 10 including a first surface 11, for example, a light-emitting surface, a second surface 12 opposite to first surface 11, and a side surface 13 between first surface 11 and second surface 12, and including a substrate 15 and a semiconductor layer 16; and an electrode 20 disposed on second surface 12 of semiconductor laminate 10; (ii) a light-reflective resin member 30 (for convenience, also referred to as a first light-reflective resin member) covering second surface 12 of light-emitting element 1 so as to expose a portion of electrode 20, for example, top surface 26; and (iii) a first light-transmissive resin member 34 covering a portion of side surface 13 of semiconductor laminate 10 and a portion of first light-reflective resin member 30. Furthermore, the light emitting device 300 may further include (iv) a second light-transmitting resin member 40 that covers the first surface 11 and side surface 13 of the semiconductor laminate 10 and the first light-transmitting resin member 34, and (v) a second light-reflecting resin member 42 that covers the surface of the second light-transmitting resin member 40 opposite to the surface facing the first surface 11 of the semiconductor laminate 10. A method for manufacturing the light emitting device of embodiment 2 according to the present disclosure will be described with reference to Figures 6A to 6H.

[0054] (a) Preparation process First, the light-emitting element 1 is prepared in the same manner as in the preparation step (a) of the first embodiment.

[0055] (b1) Light-reflecting resin preparation step (for convenience, also referred to as first light-reflecting resin preparation step) Next, as shown in FIG. 6A, a process similar to (b) light-reflecting resin preparation process of embodiment 1 is performed to prepare light-reflecting resin 31 (for convenience, also referred to as first light-reflecting resin) placed on support 45.

[0056] (b2) First translucent resin placement step Next, as shown in FIG. 6B , after the light-reflective resin preparation step and before the light-emitting element arrangement step, first light-transmitting resin 33 is arranged on first light-reflective resin 31. First light-transmitting resin 33 is arranged in islands at the locations where light-emitting elements 1 will be arranged in the light-emitting element arrangement step described below. A general-purpose dispenser can be used to arrange first light-transmitting resin 33. For example, first light-transmitting resin 33 can be arranged by applying uncured resin onto first light-reflective resin 31.

[0057] The first light-transmitting resin may be, for example, a transparent silicone resin, an epoxy resin, an acrylic resin, etc. The first light-transmitting resin is preferably an uncured resin.

[0058] The amount of the first translucent resin to be applied is preferably an amount that allows the first translucent resin to come into contact with and cover the second surface 12 of the light-emitting element 1 when the light-emitting element 1 is arranged in the light-emitting element arrangement step described below.

[0059] (c) Light-emitting element arrangement process 6C , the electrode 20 faces the first light-reflective resin 31 via the first light-transmitting resin 33, and the light-emitting element 1 is disposed on the first light-reflective resin 31. In the light-emitting element disposing step, the first light-transmitting resin 33 creeps up the electrode 20 and is disposed so as to contact and cover the second surface 12 of the light-emitting element 1.

[0060] The light emitting element 1 can be arranged in the same manner as in the step (c) of arranging the light emitting element in the first embodiment.

[0061] (d) Electrode embedding process The first light-reflective resin 31 is softened by heating, and the electrode 20 is embedded in the first light-reflective resin 31, as shown in FIG. 6D . By embedding the electrode 20, at least a portion of the first translucent resin 33 that was present between the first light-reflective resin 31 and the second surface 12 of the light-emitting element 1 is pushed out laterally. In other words, the volume of the first translucent resin 33 located between the first light-reflective resin 31 and the second surface 12 of the light-emitting element 1 is reduced, and the volume of the first translucent resin 33 located on the side surface 13 of the light-emitting element 1 is increased. Furthermore, the pushed-out first translucent resin 33 creeps up the side surface 13 of the light-emitting element 1 and covers at least the side surface of the semiconductor layer 16 that constitutes a part of the side surface 13. The first translucent resin 33 creeping up the side surface 13 suppresses the first light-reflective resin 31 from creeping up the side surface 13. Since the first light-transmitting resin 33 covering the side surface 13 is light-transmitting, it becomes possible to extract sufficient light from the side surface 13 of the light-emitting element 1, and a light-emitting device with higher brightness can be obtained.

[0062] The embedding of the electrodes can be carried out in the same manner as the electrode embedding step of the first embodiment.

[0063] (e) First curing step Next, a step similar to the (e) first curing step of embodiment 1 is performed. That is, first light-reflecting resin 31 and first light-transmitting resin 33 are heated at a third temperature to be cured. In this embodiment, the cured first light-reflecting resin 31 and first light-transmitting resin 33 are referred to as first light-reflecting resin member 30 and first light-transmitting resin member 34, respectively.

[0064] (f) Second translucent resin placement process 6E, a step similar to the (f) light-transmitting resin arranging step of embodiment 1 is performed. That is, second light-transmitting resin 41 is arranged on first light-reflecting resin member 30 so as to cover first surface 11 and side surface 13 of light-emitting element 1 and first light-transmitting resin member 34. In embodiment 2, as in modification 2 of embodiment 1, a sheet on which second light-transmitting resin 43 is arranged is attached onto the upper surface of second light-transmitting resin 41.

[0065] (g) Second curing process Next, a step is performed similar to the (g) second curing step of embodiment 1. In this embodiment, the cured second light-transmitting resin 41 and second light-reflecting resin 43 are referred to as second light-transmitting resin member 40 and second light-reflecting resin member 42, respectively.

[0066] (h) Terminal electrode formation process Next, a process similar to the terminal electrode forming process (h) of embodiment 1 is performed. As shown in Fig. 6F, support 45 is removed, and another support 46 is placed on second light-reflective resin member 42. Note that Fig. 6F is shown upside down from each of Figs. 6A to 6E. Next, a metal layer is formed on first light-reflective resin member 30 and top surface 26 of electrode 20, and the metal layer is patterned to form terminal electrode 23 as shown in Fig. 6G.

[0067] (i) Singulation process Next, a step similar to the (i) singulation step of embodiment 1 is performed. As shown in Fig. 6H, the first light-reflective resin member 30, the second light-transmissive resin member 40, and the second light-reflective resin member 42 are cut between adjacent light-emitting elements 1. This produces the light-emitting device 300 of embodiment 2 shown in Fig. 5.

[0068] <Embodiment 3> 7 shows a light-emitting device 400 manufactured by a manufacturing method according to embodiment 3. The manufacturing method for light-emitting device 400 according to embodiment 3 of the present disclosure is a method for manufacturing light-emitting device 400 including: (i) a light-emitting element 1 including a semiconductor laminate 10 including a first surface 11, for example, a light-emitting surface, a second surface 12 opposite to first surface 11, and a side surface 13 between first surface 11 and second surface 12, and including a substrate 15 and a semiconductor layer 16; and an electrode 20 disposed on second surface 12 of semiconductor laminate 10; (ii) a light-reflective resin member 30 (for convenience, also referred to as a first light-reflective resin member) covering second surface 12 of light-emitting element 1 so as to expose a portion of electrode 20, for example, top surface 26; and (iii) a first light-transmissive resin member 34 covering a portion of side surface 13 of semiconductor laminate 10 and the entirety of first light-reflective resin member 30. Furthermore, the light emitting device 400 may further include (iv) a second light-transmitting resin member 40 that covers the first surface 11 and side surface 13 of the semiconductor laminate 10 and the first light-transmitting resin member 34, and (v) a second light-reflecting resin member 42 that covers the surface of the second light-transmitting resin member 40 opposite to the surface facing the first surface 11 of the semiconductor laminate 10. A method for manufacturing a light emitting device according to a third embodiment of the present disclosure will be described with reference to Figures 8A to 8H.

[0069] (a) Preparation process First, the light-emitting element 1 is prepared in the same manner as in the preparation step (a) of the first embodiment.

[0070] (b1) Light-reflecting resin preparation step (for convenience, also referred to as first light-reflecting resin preparation step) Next, as shown in FIG. 8A, a process similar to (b) light-reflecting resin placement process of embodiment 1 is performed to prepare light-reflecting resin 31 (for convenience, also referred to as first light-reflecting resin) placed on support 45.

[0071] (b2) First translucent resin placement step 8B, first light-transmitting resin 33 is disposed on first light-reflecting resin 31. First light-transmitting resin 33 is disposed in the form of a layer all over first light-reflecting resin 31. Methods that can be used to dispose first light-transmitting resin 33 include roll coating and spraying.

[0072] (c) Light-emitting element arrangement process Next, a step similar to the (c) light-emitting element arranging step of embodiment 2 is performed. As shown in Fig. 8C, the electrode 20 faces the first light-reflective resin 31 via the first light-transmitting resin 33, and the light-emitting element 1 is arranged on the first light-reflective resin 31. In the light-emitting element arranging step, the first light-transmitting resin 33 creeps up the electrode 20 and is arranged so as to contact and cover the second surface 12 of the light-emitting element 1.

[0073] (d) Electrode embedding process Next, a process similar to the electrode embedding process (d) of embodiment 2 is performed. As shown in FIG. 8D , the first light-reflective resin 31 is heated to soften the first light-reflective resin 31, and the electrode 20 is embedded in the first light-reflective resin 31. In the electrode embedding process, by embedding the electrode 20, at least a portion of the first translucent resin 33 that existed between the first light-reflective resin 31 and the second surface 12 of the light-emitting element 1 is pushed out laterally. In other words, the volume of the first translucent resin 33 located between the first light-reflective resin 31 and the second surface 12 of the light-emitting element 1 is reduced, and the volume of the first translucent resin 33 located on the side surface 13 of the light-emitting element 1 is increased. Furthermore, the pushed-out first translucent resin 33 creeps up the side surface 13 of the light-emitting element 1 and covers at least the side surface of the semiconductor layer 16 that constitutes a part of the side surface 13. The first light-transmitting resin 33 creeps up the side surface 13, thereby suppressing the first light-reflecting resin 31 from creeping up onto the side surface 13. Because the first light-transmitting resin 33 covering the side surface 13 is light-transmitting, it becomes possible to extract sufficient light from the side surface 13 of the light-emitting element 1, and a light-emitting device with higher brightness can be obtained.

[0074] 8E to 8H, steps similar to (e) the first curing step, (f) the second light-transmitting resin disposing step, (g) the second curing step, (h) the terminal electrode forming step, and (i) the singulating step of embodiment 2 are performed, thereby producing the light-emitting device 400 of embodiment 3 shown in FIG.

[0075] In the light emitting device 400 of the third embodiment, the first light-transmissive resin member 34 is exposed from the second light-transmissive resin member 40 at its side surface. This allows light from the light emitting element 1 to be extracted to the outside via the first light-transmissive resin member 34, and the light distribution on the sides of the light emitting device 400 can be further widened compared to the light emitting device 300 of the second embodiment. [Explanation of symbols]

[0076] 1...light emitting element, 10...semiconductor laminate, 11...first surface, 12...second surface, 13...side surface, 15...Substrate, 16...Semiconductor layer, 20...Electrode, 23...Terminal electrode, 26...Top surface, 30...light-reflective resin member (first light-reflective resin member), 31...light-reflective resin (first light-reflective resin), 33...first translucent resin, 34...first translucent resin member, 40...Second translucent resin member, 41...Second translucent resin, 42...second light-reflecting resin member, 43...second light-reflecting resin, 45...Support, 46...Support, 100...light emitting device, 200...light emitting device, 300...light emitting device, 400...light emitting device

Claims

1. A method for manufacturing a light emitting device including: (i) one or more light emitting elements each including a semiconductor laminate having a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and an electrode disposed on the second surface; and (ii) a light reflective resin member covering the second surface of the light emitting element so as to expose a portion of the electrode, The manufacturing method includes: (a) a light emitting element preparation step of preparing the light emitting element; (b) a light-reflecting resin preparation step of preparing a light-reflecting resin that is placed on a support and semi-cured by heating to a first temperature; (c) a light-emitting element arranging step of arranging the light-emitting element on the light-reflective resin with the electrode facing the light-reflective resin; (d) an electrode embedding step of softening the light-reflecting resin by heating it to a second temperature lower than the first temperature, and embedding the electrode in the light-reflecting resin in a state in which a side surface of the semiconductor laminate is exposed; Including, A method for manufacturing a light-emitting device.

2. 2. The method for manufacturing a light emitting device according to claim 1, further comprising the step of: embedding the electrode in the light reflective resin; and then arranging a light transmissive resin on the light reflective resin so as to cover the first surface and a side surface of the light emitting element.

3. the method further includes a first light-transmitting resin arranging step of arranging a first light-transmitting resin on the light-reflective resin after the light-reflective resin preparing step and before the light-emitting element arranging step; 3 . The method for manufacturing a light emitting device according to claim 1 , wherein in the light emitting element arranging step, the light emitting element is arranged on the light reflective resin with the electrode facing the light reflective resin via the first light transmissive resin.

4. 4. The method for manufacturing a light emitting device according to claim 3, further comprising the step of: after embedding the electrode in the light reflective resin, disposing a second light transmissive resin on the light reflective resin so as to cover the first surface and side surfaces of the light emitting element.

5. 4. The method for manufacturing a light-emitting device according to claim 1, further comprising the step of: embedding the electrode in the light-reflecting resin; and then arranging a wavelength conversion resin on the light-reflecting resin so as to cover the first surface and side surfaces of the light-emitting element.

6. 6. The method for manufacturing a light emitting device according to claim 1, wherein in the electrode embedding step, the electrode is embedded in the light reflective resin by applying a load to the light emitting element.

7. The state of the light-reflective resin in the light-reflective resin preparation step and the heating conditions in the electrode embedding step are: A method for manufacturing a light-emitting device described in any one of claims 1 to 6, wherein a plurality of n types of light-emitting elements including the light-emitting element are placed on light-reflective resin placed on the support, and when the light-reflective resin is heated and sunk by its own weight or load, the light-reflective resin can be sunk so that it wets the second surface of the light-emitting element while suppressing the light-reflective resin from creeping up to the side surface of the light-emitting element, and the heating conditions are set by referring to a database in which the state of the light-reflective resin and the heating conditions are stored.

8. the database stores, for each of m types of light-reflective resins including the light-reflective resin, a state of the light-reflective resin that can be made to sink so that the light-reflective resin wets the second surface of the light-emitting element while suppressing creeping up of the light-reflective resin onto the side surface of the light-emitting element when the n types of light-emitting elements are respectively placed on the light-reflective resin placed on the support, and the light-reflective resin is heated to sink by its own weight or a load, and the heating conditions; The method for manufacturing a light emitting device according to claim 7 , further comprising the steps of: selecting a light reflective resin to be placed on the support body by referring to the database; and setting a state of the light reflective resin and the heating conditions.

9. 9. The method for manufacturing a light-emitting device described in claim 7 or 8, wherein in the database, the heating conditions for at least some of the light-reflecting resin include a first temperature that semi-cures the light-reflecting resin and a second temperature that softens the semi-cured light-reflecting resin.

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