Memory Selector
JP7743460B2Active Publication Date: 2025-09-24TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Application Number
- JP2023048807
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-08-16
- Filing Date
- 2023-03-24
- Publication Date
- 2025-09-24
- Estimated Expiration
- 2043-03-24
Smart Images
Figure 0007743460000001 
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Figure 0007743460000003
Abstract
To provide a memory selector and a method.SOLUTION: A method includes: formation of a memory structure of a memory cell and insertion of the memory structure between an upper electrode and a lower electrode; formation of a selector structure of the memory cell, insertion of the selector structure between the upper electrode and the lower electrode, inclusion of a first material provided on a first layer and a second material provided on a second layer, inclusion of the second material and an added element in the first material, and inclusion of an interactive threshold switching material in the first material; formation of a word line above the selector structure and having a vertical direction vertical to a longitudinal direction in a bit line provided below the selector structure.SELECTED DRAWING: Figure 1
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Citation Information
Patent Citations
Methods for forming three-dimensional phase-change memory devices
US20210111342A1
Semiconductor device including chalcogen compound and semiconductor apparatus including the same
US20220140003A1
Switch element and storage device
WO2016158429A1