Semiconductor device having gate resistor with low resistance variation

JP7743528B2Active Publication Date: 2025-09-24WOLFSPEED INC
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Patent Information

Application Number
JP2023549878
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-03-01
Filing Date
2022-02-22
Publication Date
2025-09-24
Estimated Expiration
2042-02-22

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Abstract

The power semiconductor device includes a semiconductor layer structure including an active area having a plurality of unit cell transistors and an inactive gate pad area, a gate resistor layer overlying the semiconductor layer structure, an inner contact overlying the direct gate resistor layer, and an outer contact overlying the direct gate resistor layer, the outer contact surrounding the inner contact within the inactive gate pad area of ​​the semiconductor device.
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Citation Information

Patent Citations

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  • Semiconductor element, semiconductor device using it, and converter

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  • Semiconductor device

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  • Semiconductor device

    WO2015080162A1