Heterometallic material manufacturing method and heterometallic material manufacturing device

Abstract

To provide a method and an apparatus for producing a hetero metallic material allowing for obtaining a metallic material which exhibits physical / chemical properties not achievable with single metal species.SOLUTION: A method and an apparatus for producing a hetero metallic material includes ejecting mutually-different metal species of metal melt toward a rotating substrate B from a plurality of nozzles and allowing ejected substances to be rapidly cooled down on the substrate into a deposition of metal on the substrate.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a method for producing a heterometallic material and an apparatus for producing a heterometallic material. [Background technology]

[0002] Conventionally, an ingot (raw material ingot) has been produced by melting a metal, spraying the molten material onto a substrate, and depositing the molten material on the substrate. For example, Patent Document 1 describes a method having an injection mechanism for injecting the molten metal, injecting the molten metal onto a substrate using a jet flow of inert gas by using this injection mechanism, and forming a coherent deposit of the metal on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent No. 3,909,921 Summary of the Invention [Problem to be solved by the invention]

[0004] As described in Patent Document 1, metal deposits can be obtained as crystalline or amorphous structures by controlling the temperature of the metal melt sprayed onto a substrate. However, with the technology described in Patent Document 1, the resulting metal deposit is a single, homogeneous metal material consisting of the metal species sprayed. In other words, the physical and chemical properties of the resulting metal deposit are limited to those of the metal species sprayed.

[0005] An object of the present invention is to provide a method and an apparatus for producing a heterometallic material that can produce a metallic material that exhibits physical and chemical properties that cannot be achieved with a single metal species.

[0006] As a result of extensive research in light of the above-mentioned problems, the inventors have found that by spraying molten metal of different metal types from multiple nozzles toward a rotating substrate, and allowing the sprayed metal to be rapidly cooled on the rotating substrate and deposited on the substrate, the metal ingot deposited on the substrate can be an ingot that exhibits unique properties different from those of a single metal type sprayed from a single nozzle.The present invention was completed based on these findings. [Means for solving the problem]

[0007] The above problems were solved by the following means. [1] A method for producing a heterometallic material, comprising spraying molten metals of different metal species from a plurality of nozzles toward a rotating substrate, and quenching the sprayed materials on the substrate to deposit metals on the substrate. [2] The method for producing a heterogeneous metal material according to [1], wherein the deposition direction of the metal is controlled by controlling the injection direction of the metal melt. [3] The method for producing a heterometallic material according to [1] or [2], wherein the molten metal is sprayed in the direction of the rotation axis of the substrate from at least one nozzle of the plurality of nozzles. [4] The method for producing a heterogeneous metal material according to any one of [1] to [3], wherein the molten metal is sprayed from at least one nozzle of the plurality of nozzles in a direction oblique to the rotation axis of the substrate. [5] The method for producing a heterometallic material according to any one of [1] to [4], wherein the metal melt is sprayed in an inert gas atmosphere. [6] The method for producing a heterometallic material according to any one of [1] to [5], wherein the heterometallic material includes an amorphous structure. [7] a substrate holder that rotatably holds the substrate; a crucible having a metal disposed therein and a nozzle at one end, a heating mechanism for heating and melting the metal, and a plurality of injection mechanisms for injecting the molten metal from the nozzle toward a rotating substrate; the crucible is arranged so that the spray angle from the nozzle can be adjusted; The substrate holder quenches the molten metal jet through the substrate to deposit metal. Heterometallic material manufacturing equipment.

[0008] In the present invention, the term "metal" is used to include both pure metals and metal alloys, unless otherwise specified. [Effects of the Invention]

[0009] According to the method and apparatus for producing a heterometallic material of the present invention, it is possible to obtain a metallic material that has a unique layered structure and exhibits physical and chemical properties that cannot be achieved with a single metal species. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic diagram showing a configuration example of an apparatus for producing a heterometallic material according to one embodiment of the present invention. [Figure 2] FIG. 2 is a schematic diagram showing a configuration example of the manufacturing apparatus. [Figure 3] FIG. 2 is a schematic diagram showing an example of the configuration of a plurality of injection mechanisms of the manufacturing apparatus. [Figure 4] FIG. 2 is an enlarged cross-sectional view schematically showing one end of a crucible of the manufacturing apparatus and its vicinity. [Figure 5] FIG. 2 is a schematic diagram showing a configuration example of the injection mechanism when viewed from one direction. [Figure 6] FIG. 2 is a block diagram showing an example of the configuration of an operation panel of the manufacturing apparatus. [Figure 7] 10 is a flowchart illustrating a procedure of a process executed by the manufacturing apparatus. [Figure 8] FIG. 3 is an explanatory diagram for explaining the injection mechanism when the molten metal is injected. [Figure 9]FIG. 3 is an explanatory diagram for explaining the injection mechanism when the molten metal is injected. [Figure 10] 1 is a photograph showing an example of a ring-shaped metal mass in which different types of metals are spirally stacked. [Figure 11] FIG. 10 is a schematic diagram showing a configuration example of a crucible according to a modified example of the present invention. [Figure 12] 1 is a cross-sectional SEM-EDX image of a heterometallic material according to an embodiment of the present invention. [Figure 13] 1 is a cross-sectional SEM-EDX image of a heterometallic material according to an embodiment of the present invention. [Figure 14] 1 is a graph plotting micro Vickers hardness of heterometallic materials according to examples and comparative examples of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Note that the dimensions and scale of each part in the drawings may differ from the actual dimensions for the sake of convenience of explanation. Also, the drawings may be shown schematically to facilitate understanding. Furthermore, the present invention is not limited to the embodiments exemplified below except as defined in the present invention. In the following description, mutually orthogonal X-, Y-, and Z-axes are assumed. The X-, Y-, and Z-axes are common to all figures illustrated in the following description and are three mutually orthogonal axial directions. As illustrated in FIG. 1, a direction along the X-axis as viewed from an arbitrary point is referred to as the X1 direction, and a direction opposite to the X1 direction is referred to as the X2 direction. The X-axis direction is a direction that includes both the X1 and X2 directions. Similarly, mutually opposite directions along the Y-axis from an arbitrary point are referred to as the Y1 and Y2 directions. The Y-axis direction is a direction that includes both the Y1 and Y2 directions. Furthermore, mutually opposite directions along the Z-axis from an arbitrary point are referred to as the Z1 and Z2 directions. The Z-axis direction is a direction that includes both the Z1 and Z2 directions. Furthermore, the XY plane including the X- and Y-axes corresponds to a horizontal plane. The Z-axis is an axis that extends vertically.

[0012] In this specification, the term "connection" refers to a mode in which element a and element b are connected directly or indirectly wirelessly, by wire, or electrically.

[0013] In this specification, "on" means that element b is provided directly on element a, or that element b is provided above (e.g., vertically above) element a via another element. For example, "depositing a metal material on a substrate" means that metal is deposited directly on the substrate, or that metal is deposited above the substrate via another element, such as an optional metal layer.

[0014] The "metal material" in the present invention and this specification may be in a crystalline state, an amorphous state, or a mixture of the crystalline state and the amorphous state.

[0015] 1. Embodiment [Configuration of heterometallic material manufacturing equipment] 1 and 2 are schematic diagrams showing an example of the configuration of a heterometallic material manufacturing apparatus 1 (hereinafter referred to as manufacturing apparatus 1) according to one embodiment suitable for carrying out the heterometallic material manufacturing method of the present invention (hereinafter also simply referred to as "the manufacturing method of the present invention"). Fig. 1 is a view of the manufacturing apparatus 1 as seen in the Y2 direction, and Fig. 2 is a view of the manufacturing apparatus 1 as seen in the Y1 direction (a view of the back side of Fig. 1). The manufacturing apparatus 1 has a substrate holder 10 shown in Fig. 3 and a plurality of injection mechanisms 20 shown in Fig. 3. Furthermore, the manufacturing apparatus 1 has a chamber 40, a stand 50, a substrate rotation and lifting mechanism 60, a plurality of high-frequency oscillators 70, an exhaust device 80, an operation panel 90, and a gas supply device 100. The dimension D1 in the X-axis direction of the production apparatus 1 is not particularly limited and can be set appropriately depending on the purpose. That is, a relatively small apparatus size can be used for research purposes, and a larger apparatus can be used for industrial purposes.

[0016] The chamber 40 has an observation window 41, a plurality of viewports 42, a plurality of radiation thermometers 43, a plurality of temperature display monitors 44, and a pressure gauge (not shown). The chamber 40 is a vacuum chamber that houses a plurality of injection mechanisms 20, a substrate holder 10, the radiation thermometers 43, and the pressure gauge. The viewport 42 is a peephole through which the temperature indicated by the radiation thermometer 43 can be confirmed. The radiation thermometer 43 is provided on the inner surface of the chamber 40 and measures the temperature inside the crucible 21, which will be described later. The temperature display monitor 44 is connected to the radiation thermometer 43 and displays the temperature measured by the radiation thermometer 43. The pressure gauge is provided inside the chamber 40 and measures the internal pressure (kPa) of the chamber 40. The chamber 40 is connected to an exhaust pipe P and communicates with the outside world via the exhaust pipe P. A leak valve V is provided in the exhaust pipe P. The leak valve V, valves V1 to V3, and flow rate control valves V4 to V8 described below are not particularly limited. For example, solenoid valves configured to be able to electrically switch between communication and cut-off within the pipes may be used. Note that the leak valve V, valves V1 to V3, and flow rate control valves V4 to V8 are normally in a closed state in the initial state before the manufacturing apparatus 1 is started.

[0017] 3 is a schematic diagram showing a configuration example in which two injection mechanisms 20 are provided as the plurality of injection mechanisms 20. The injection mechanism 20 includes a crucible 21, a gas atomizer 22, and a heating mechanism .

[0018] The injection mechanism 20 (crucible 21) according to this embodiment is supported by a rotation axis X1, and is configured to be rotatable about the rotation axis X1 as the rotation axis X1 rotates around the Y axis (see FIGS. 8 and 9).

[0019] The crucible 21 is a cylindrical housing extending in the Z-axis direction and is a container for storing a molten metal. A metal is placed inside the crucible 21 before high-frequency induction heating, which will be described later. This metal is usually a metal alloy (also simply referred to as an "alloy"). This alloy is, for example, an alloy based on Mg, Zn, Ca, Li, Ti, Cu, Sn, Al, or Fe. Among these, an alloy based on Al, Mg, Cu, or Fe is preferred from the viewpoint of the fluidity of the molten metal to be injected in step St3, which will be described later. As an example, an AZ91-Mg alloy, an Al-Li 8090 alloy, or a Zr-Cu-based alloy can be suitably used. In this embodiment, the metal placed in one crucible 21 among the plurality of crucibles 21 is different in type from the metal placed in the other crucibles 21. The capacity of crucible 21 is set appropriately depending on the specifications and applications of manufacturing apparatus 1. The material constituting crucible 21 may also be set appropriately depending on the heating temperature, etc. Crucible 21 may be made of, for example, quartz, or may be a boron nitride crucible (BN crucible). Fig. 4 is an enlarged cross-sectional view schematically showing one end and its vicinity of crucible 21. As illustrated in Fig. 4, crucible 21 has nozzle 211. Nozzle 211 is provided integrally with one end of crucible 21 located in the Z1 direction, and is a tube extending from that end in the Z1 direction.

[0020] 5 is a schematic diagram showing a configuration example of the injection mechanism 20 when viewed in the Z2 direction. The gas atomizer 22 is an annular structure having a through-hole 221, a gas inlet 222, a gas flow path 223, and a gas outlet 224. The nozzle 211 is inserted into the through-hole 221, and surrounds the outer peripheral surface of the nozzle 211 around the Z axis. The gas inlet 222 is an inlet for gas supplied from a gas supply device 100, which will be described later. As illustrated in FIG. 5, the gas inlet 222 surrounds the periphery of one end of the nozzle 211 located in the Z1 direction. The gas outlet 224 is an outlet for ejecting the gas that has flowed in from the gas inlet 222. The gas flow path 223 is an annular space that communicates with the gas inlet 222 and the gas outlet 224 and guides the gas that has flowed in from the gas inlet 222 to the gas outlet 224. The distance D2 (see FIG. 3) between the gas atomizer 22 (nozzle 211) and the substrate B is not particularly limited and is set appropriately depending on the size of the apparatus. Similarly, the dimension D4 of the substrate B in the X-axis direction is set appropriately depending on the size of the apparatus. A closed-type atomizer is used as the gas atomizer according to this embodiment. Such an atomizer is described, for example, in "Toyota Central R&D Labs. R&D Review Vol. 30 No. 2 (June 1995)."

[0021] The heating mechanism 23 is a heating coil that surrounds the outer circumferential surface of the crucible 21. The longitudinal direction of the heating mechanism 23 and the longitudinal direction of the crucible 21 are parallel to each other. The heating mechanism 23 according to this embodiment generates heat inside the crucible 21 by magnetic flux generated by a high-frequency current supplied from a high-frequency oscillator 70 (described later). That is, the heating mechanism 23 is a heating coil that heats the metal placed in the crucible 21 by high-frequency induction heating. The temperature to which the heating mechanism 23 heats the metal placed in the crucible 21 is determined appropriately depending on the melting point of the metal to be melted, but it can heat up to, for example, approximately 1500°C. Here, the distance D3 (see FIG. 3) between one heating mechanism 23 and another heating mechanism 23 is preferably a distance that prevents the magnetic fluxes generated by each heating mechanism 23 from interfering with each other.

[0022] The pedestal 50 is a housing connected to the chamber 40, and communicates with the internal space of the chamber 40 via a through-hole (not shown).

[0023] The substrate rotation and lifting mechanism 60 is provided inside the stand 50. The substrate rotation and lifting mechanism 60 is inserted through the through-hole and supports the substrate holder 10 inside the chamber 40. The substrate rotation and lifting mechanism 60 is configured to be extendable and retractable in the Z-axis direction. An electric motor (not shown) is also built into the substrate rotation and lifting mechanism 60, and rotation of the electric motor rotates the substrate holder 10 around the Z-axis.

[0024] The substrate holder 10 holds the substrate B and moves the substrate B in the Z-axis direction as the substrate rotation and lifting mechanism 60 expands and contracts in the Z-axis direction. The substrate holder 10 also rotates the substrate B around the Z-axis as the substrate rotation and lifting mechanism 60 rotates around the Z-axis. As illustrated in FIG. 3, the substrate holder 10 according to this embodiment includes a cooling device 11 and a thermometer 12. The cooling device 11 is built into the substrate holder 10 and cools the surface S of the substrate holder 10. The substrate holder 10 is an example of a "substrate holding unit." The thermometer 12 is provided on the substrate holder 10 and measures the temperature of the surface S. The arrangement of the thermometer 12 is not limited to the arrangement illustrated in FIG. 1 and may be arbitrary.

[0025] The multiple high-frequency oscillators 70 are high-frequency power sources that convert electricity into high-frequency energy. Each of the multiple high-frequency oscillators 70 is connected to each of the multiple injection mechanisms 20 (heating mechanisms 23) and supplies electric power (high-frequency energy). The high-frequency oscillators 70 are connected to a cooling water circulation device (not shown) via hoses (not shown). Cooling water supplied from the cooling water circulation device passes through the high-frequency oscillators 70 and then circulates back to the cooling water circulation device.

[0026] The exhaust device 80 includes a diffusion pump 81 and a rotary pump 82. The diffusion pump 81 is connected to an exhaust pipe P1 equipped with a valve V1 and communicates with the interior space of the chamber 40 via the exhaust pipe P1. The rotary pump 82 is connected to an exhaust pipe P2 equipped with a valve V2 and is connected to the diffusion pump 81 via the exhaust pipe P2. The rotary pump 82 functions as an auxiliary pump for the diffusion pump 81. The rotary pump 82 branches off from the exhaust pipe P2 and communicates with the interior space of the chamber 40 via a branch pipe P3 equipped with a valve V3 and the exhaust pipe P2.

[0027] FIG. 6 is a block diagram showing an example of the configuration of the operation panel 90. The operation panel 90 is an information processing device provided on the stand 50. The operation panel 90 has a control device 91, a storage device 92, a communication device 93, an input device 94, and a display device 95, which are interconnected via a bus 96. The operation panel 90 is connected to each element constituting the manufacturing apparatus 1 (plurality of high-frequency oscillators 70, a cooling device 11, a gas supply device 100, a leak valve V, valves V1 to V3, flow rate control valves V4 to V8, a diffusion pump 81, a rotary pump 82, a substrate rotation and lifting mechanism 60, an electric motor built into the substrate rotation and lifting mechanism 60, a radiation thermometer 43, a thermometer 12, a pressure gauge inside the chamber 40, a rotation axis X1, and a cooling water circulator).

[0028] The control device 91 is composed of one or more processors that control the various elements of the above-described manufacturing apparatus 1. For example, the control device 91 is composed of one or more types of processors, such as a CPU (Central Processing Unit), an SPU (Sound Processing Unit), a DSP (Digital Signal Processor), an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit). In this embodiment, the control device 91 executes the program PG stored in the storage device 92, thereby causing the manufacturing apparatus 1 to execute various processes for implementing the method for manufacturing a heterometallic material of the present invention. Examples of such processes include a process for controlling the high-frequency current (A), high-frequency voltage (V), and high-frequency power (W) supplied to each of the multiple injection mechanisms 20, a process for controlling the cooling temperature (°C) and cooling rate (L / min) at which the cooling device 11 cools the substrate holder 10 (surface S), a process for adjusting the flow rate of gas output from the gas supply device 100, a process for controlling the opening / closing of the leak valve V and each of the valves V1 to V8, a process for controlling the start / stop of the diffusion pump 81 and the rotary pump 82, a process for controlling the rotation speed (rpm) of the electric motor built into the substrate rotation / lift mechanism 60, a process for controlling the flow rate of cooling water output from the cooling water circulator, a process for controlling the injection pressure (kPa) of the gas atomizer 22, and a process for controlling the angle between the longitudinal direction of the crucible 21 and the rotation axis X1.

[0029] The storage device 92 is one or more memories that store the program PG executed by the control device 91 and data used by the control device 91. The storage device 92 is configured with a known storage medium such as a magnetic storage medium or a semiconductor storage medium. The storage device 92 may also be configured with a combination of multiple types of storage medium. The storage device 92 may also be a portable storage medium or an external storage medium that can communicate with the control device 91.

[0030] The communication device 93 is a communication circuit that is communicatively connected to each element of the manufacturing apparatus 1 described above. The communication device 93 functions as an input / output interface for connecting to each of these elements. The operation panel 90 according to this embodiment may further have a communication interface (not shown) that is connected to a network such as the Internet, and may be connected to an externally connected device such as a server, a personal computer, a smartphone, or a tablet terminal via this network. In this case, various types of data may be exchanged between the operation panel 90 and the externally connected device.

[0031] The input device 94 is a device operated by an operator, such as a hardware button, switch, touch panel, or lever. The input device 94 may be, for example, a remote control device using infrared or other radio waves, or an externally connected device compatible with the operation of the manufacturing apparatus 1. The input device 94 includes an input control circuit that generates an input signal based on information input by the operator and outputs the signal to the control device 91. The operator operates the input device 94 to input various parameters into the manufacturing apparatus 1, thereby instructing the above-mentioned control. This allows the operator to manufacture, for example, a lightweight heterometallic material having multiple metal layers stacked thereon, depending on the observation conditions at hand. Examples of the parameters include the set temperature of the crucible 21, the high-frequency voltage, high-frequency current, and high-frequency power output from the high-frequency oscillator 70, the temperature of the surface S of the substrate holder 10 (see FIG. 3), the rotation speed of the substrate holder 10, the flow rate of the cooling water output from the cooling water circulator, the pressure within the chamber 40, and the spray pressure of the gas atomizer 22.

[0032] The display device 95 is configured as a device capable of notifying the operator of acquired information. The display device 95 is, for example, a display device such as an LCD (Liquid Crystal Display) or an organic EL (Electro Luminescence) display. The display device 95 displays the results obtained by the processing of the control device 91. Specifically, the display device 95 displays, for example, the current temperature inside the crucible 21 and the current surface temperature of the substrate holder 10.

[0033] The gas supply device 100 is, for example, a cylinder that stores gas, and supplies the gas to the chamber 40 and the multiple gas atomizers 22. There are no particular restrictions on the gas stored in the gas supply device 100, and it is usually an inert gas. Examples of inert gases include rare gases such as argon gas and nitrogen gas. The gas supply device 100 is connected to a gas supply pipe T (see FIG. 1). The gas supply pipe T is connected to the chamber 40, and supplies the gas output from the gas supply device 100 into the chamber 40. A flow rate control valve V4 is provided in the gas supply pipe T. When two injection mechanisms 20 are provided, branch pipes T1 to T4 can be provided branching off from the gas supply pipe T. Of the branch pipes T1 to T4, branch pipe T1 is connected to the inlet of one of the two crucibles 21, and branch pipe T2 is connected to the inlet of the other crucible 21. Branch pipe T3 is connected to the gas inlet 222 of one of the two gas atomizers 22, and branch pipe T4 is connected to the gas inlet 222 of the other gas atomizer 22. As illustrated in FIG. 1 , flow rate adjustment valves V5, V6, V7, and V8 are provided in the branch pipes T1, T2, T3, and T4, respectively.

[0034] [Method of manufacturing heterometallic materials] Next, an example of the manufacturing method of the present invention will be described with appropriate reference to Fig. 7. Fig. 7 is a flowchart illustrating the procedure of the process executed by the manufacturing apparatus 1. As illustrated in Fig. 7, the manufacturing apparatus 1 executes an exhaust process (step St1), a heating process (St2), a film forming process (St3), and a post-processing process (St4).

[0035] <Step St1: Exhaust Process> The control device 91 starts the diffusion pump 81, the rotary pump 82, and the gas supply device 100. Next, the control device 91 opens the valves V1 to V3 to evacuate the chamber 40 until a vacuum is reached. Next, the control device 91 opens the flow rate control valve V4 to supply gas into the chamber 40, thereby replacing the atmosphere inside the chamber 40 with an inert gas atmosphere. Here, in conventional manufacturing methods (e.g., a method in which an alloy sheet and a steel sheet are laminated and rolled together to form a composite), the resulting composite metal material is strong but brittle and does not exhibit the desired mechanical properties. This is thought to be due to the formation of an oxide layer at the interface of the produced composite metal material, causing embrittlement. In contrast, in the manufacturing method of the present invention, as described above, the chamber 40 is substituted with an inert gas atmosphere, and metal (metal particles) are continuously and rapidly deposited on the rotating substrate. Therefore, in step St3 described below, the formation of an oxide layer between the layers is suppressed in the metal block in which layers of different types of metal are spirally laminated and deposited. In other words, a highly integrated heterometallic material can be obtained, and unique physical properties that have not been achieved in the past can also be expressed. In step St1, it is preferable that the pressure within chamber 40 be controlled by control device 91 so that the metal block formed in step St3, which will be described later, is in a desired state. This control is performed, for example, by control device 91 controlling exhaust device 80 and flow rate control valve V4 based on input from an operator.

[0036] <Step St2: Heating process> The control device 91 activates the multiple high-frequency oscillators 70. This supplies a high-frequency current to each of the multiple heating mechanisms 23, and the metal species placed in each of the multiple crucibles 21 is high-frequency induction heated to form a molten metal. At this time, it is preferable to control the temperature inside the crucible 21 so that the metal species deposit formed in step St3, which will be described later, is in a desired state. Specifically, it is preferable to control the temperature inside the crucible 21 to a range of, for example, 500°C or higher and 1500°C or lower. This control is performed, for example, by the control device 91 controlling the high-frequency oscillators 70 based on input from an operator. Note that in step St2, the frequency of the high-frequency current supplied to one of the multiple heating mechanisms 23 may be different from the frequency of the high-frequency current supplied to the other heating mechanisms 23.

[0037] <Step St3: Film-forming process> The control device 91 rotates the substrate holder 10 about the Z axis via the substrate rotation / lifting mechanism 60, thereby rotating the substrate B about the Z axis at a desired speed. Next, the control device 91 opens the flow rate control valves V5 to V8 to supply gas to each of the multiple crucibles 21 and each of the multiple gas atomizers 22. As a result, each of the multiple injection mechanisms 20 sprays the molten metal toward the substrate B in parallel. Specifically, the molten metal accumulated in each crucible 21 is pushed out in the Z1 direction by the gas flowing in from the inlet of the crucible 21, and is further radially diffused by the gas injected from the gas outlet 224 (see FIG. 4 ) and sprayed onto the substrate B. At this time, the flow rate of the gas flowing into each inlet of the multiple crucibles 21 and the flow rate of the gas flowing into each gas inlet of the multiple gas atomizers 22 may be controlled independently. That is, the valves V5 to V8 may be controlled by the control device 91 independently of each other. The molten metal jet sprayed onto substrate B is rapidly cooled when it reaches substrate B, and metal is deposited on substrate B. Here, the ratio of different materials in the formed metal mass can also be controlled to a desired ratio by the control device 91 controlling the rotation speed of substrate B (substrate holder 10) based on input from the operator. In this embodiment, the control device 91 controls the valves V5 to V8 based on input from an operator, thereby making it possible to control the thickness of one metal layer on the substrate B to, for example, 100 μm or less. This allows the heterometallic material formed on the substrate B to have any desired design. The aforementioned "design" includes, for example, a functional viewpoint of the heterometallic material and a design viewpoint that takes into account the aesthetic shape. The molten metal sprayed onto the substrate B is rapidly cooled by the cooling device 11 (see FIG. 3) and deposited on the substrate B. The cooling rate of the molten metal on the substrate B is controlled to, for example, 1000° C. / s or more. This control is performed by the control device 91 controlling the cooling device 11 based on input from an operator. In step St3, the process of spraying the molten metal onto the rotating substrate B by each of the above-mentioned multiple injection mechanisms 20 and the process of rapidly cooling the molten metal deposited on the substrate B are carried out in parallel, thereby enabling a metal layer of a crystalline structure or an amorphous structure to be formed sequentially in a spiral pattern on the substrate B. Specifically, molten metals of different metal species are sprayed from each of the multiple nozzles 211 toward the rotating substrate B, and the sprayed material is rapidly cooled on the substrate B, forming regular spiral layers of multiple metal species on the substrate B without forming substantial oxide layers between the layers. In other words, a heterometallic material exhibiting unique physical properties, such as combining the physical and chemical properties of multiple metal species, can be obtained on the substrate B, which is not possible with a single metal species. In other words, the fusion of different materials can produce heterometallic materials with new functions. For example, it is possible to produce metal ingots in which layers of different metal materials are alternately stacked in a spiral shape without an oxide layer between them, enabling the creation of parts and products made of heterometallic materials with novel physical properties. For example, by inserting a layer of a lightweight, hard metal material between layers of a flexible metal material, a highly integrated heterometallic material that combines hardness and elasticity can be obtained. Note that in step St3, the distance D2 may be controlled by the control device 91 as necessary.

[0038] Next, several possible forms of the injection mechanism 20 in step St3 will be described when the heterometallic material is produced as described above using the production apparatus 1. Figures 8 and 9 are explanatory diagrams for explaining the injection mechanism 20 when injecting the metal melt.

[0039] (Form 1) As illustrated in FIG. 8 , the control device 91 controls the rotation axis X1 so that the longitudinal direction of the crucible 21 is parallel to the rotation axis X. In this state, when gas is supplied to the two injection mechanisms 20, the metal melt is sprayed from each of the two injection mechanisms 20 toward the rotating substrate B along the rotation axis direction (parallel to the rotation axis X). This makes it possible to obtain, for example, a ring-shaped heterometallic material on the substrate B, in which two different metal layers are alternately stacked in a spiral shape without an oxide layer between them. Unlike a heterometallic material obtained by alternately stacking two types of flat metal materials, the heterometallic material obtained on the substrate B in this way is in a spiral layered state with substantially no oxide layer between the layers, and therefore the properties of the entire material can be more integrated. FIG. 10 is a photograph of a ring-shaped metal ingot made of a metal material obtained by spraying a molten metal onto a substrate B as shown in FIG. 8 using a manufacturing apparatus 1 equipped with two spray mechanisms 20.

[0040] (Form 2) As illustrated in FIG. 9 , the control device 91 controls the rotation axis X1 so that the longitudinal direction of the crucible 21 is inclined relative to the rotation axis X. In this state, when gas is supplied to the two injection mechanisms 20, the two injection mechanisms 20 spray the molten metal toward the rotating substrate B in a direction oblique to the rotation axis X. As a result, a heterometallic material can be obtained on the substrate B, in which two different types of bent metal layers are alternately stacked in a spiral shape with substantially no oxide layer between the layers, as illustrated in FIG. 9 . Unlike heterometallic materials formed by alternately stacking two types of flat metal layers, the heterometallic material obtained on the substrate B in this manner can be obtained without bending or the like. In other words, it is possible to produce a bent heterometallic material without a process such as bending. The shape of the bend can be controlled by adjusting the angle between the longitudinal direction of the crucible 21 and the rotation axis X (hereinafter referred to as the injection angle). In this case, the injection angle is preferably greater than 0° and less than 45°.

[0041] <Step St4: Post-processing step> The control device 91 closes the valves V1 to V3 and the flow rate control valves V4 to V8, and stops the diffusion pump 81 and the rotary pump 82. Next, the control device 91 opens the leak valve V, and releases the gas in the chamber 40 to the outside.

[0042] 2. Variations Although one example of a preferred embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment and various modifications can be made. Specific modified embodiments that can be added to the above-described embodiment are exemplified below. Two or more embodiments arbitrarily selected from the following examples may be appropriately combined within the scope of not mutually contradicting each other. It should be noted that the present invention is not limited in any way to the following modifications other than those specified in the present invention.

[0043] [Variation 1] In the example of the above embodiment, the multiple jetting mechanisms 20 each jet the molten metal in a direction inclined with respect to the rotation axis X of the substrate B, but the above-mentioned inclination mode is not limited to this. For example, one of the multiple jetting mechanisms 20 may jet the molten metal along the rotation axis X, and the other jetting mechanisms 20 may jet the molten metal in a direction inclined with respect to the rotation axis X.

[0044] [Variation 2] In the above embodiment, the configuration in which there are two injection mechanisms 20 has been mainly described, but the present invention is not limited to this, and there may be three or more injection mechanisms 20. The number of injection mechanisms 20 can be an integer from 2 to 10, preferably 2 to 8, more preferably 2 to 6, also preferably 2 to 4, also preferably 2 or 3, and also preferably 2.

[0045] [Variation 3] In the above embodiment, the ejection direction of each of the plurality of ejection mechanisms 20 is controlled electrically by the control device 91, but this is not limiting, and for example, the ejection direction may be controlled manually by an operator.

[0046] [Variation 4] The configuration of the manufacturing apparatus 1 according to this embodiment is not limited to the configuration exemplified in Figures 1 and 2. For example, a normal shutter mechanism (not shown) may be provided between the multiple injection mechanisms 20 and the substrate B. In this case, the control device 91 controls the open / close state of the shutter mechanism, thereby suitably controlling the thickness of the metal layer formed on the substrate B.

[0047] [Variation 5] Fig. 11 is a schematic diagram showing an example of the configuration of crucible 21 according to a modified example of the present invention. The configuration of crucible 21 according to this embodiment is not limited to the configuration exemplified in Fig. 3. For example, as exemplified in Fig. 11, it may have a configuration that tapers conically toward the substrate B side. In this case, the tip of crucible 21 on the substrate B side (Z1 direction side) may be polished with a file or the like.

[0048] 3. Notes The present invention is not limited to a manufacturing apparatus and a manufacturing method for manufacturing raw material ingots such as ingots, and its applications are not particularly limited.

[0049] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the present invention may exhibit other effects that will be apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0050] Although the preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, the present invention is not limited to these examples. It is clear that a person skilled in the art of the present invention can conceive of various modifications and alterations within the scope of the technical idea described in the claims, and it is understood that these also naturally fall within the technical scope of the present invention. [Example]

[0051] The present invention will be described in more detail below based on examples, but the present invention is not limited to these examples.

[0052] [Example] An Al-Li 8090 alloy (95.1% by mass of Al, 2.5% by mass of Li, 1.3% by mass of Cu, 1.0% by mass of Mg, and 0.1% by mass of Zr) was placed in an alumina crucible and melted for 30 minutes under an argon atmosphere (purity 99.9995%) to homogenize it. The melt was then poured into a copper mold to produce a metal ingot measuring 20 mm high, 100 mm wide, and 50 mm deep. This metal ingot was then cut into a rectangular prism-shaped metal piece measuring 10 mm high, 10 mm wide, and 50 mm deep, and placed in one of the two quartz crucibles used in the manufacturing apparatus of the present invention. Next, a metal piece was prepared from the AZ91-Mg alloy (Mg: 90 mass%, Al: 8.8 mass%, Zn: 0.8 mass%, Mn: 0.4 mass%) in the same manner as for the Al-Li 8090 alloy, and placed in the other of the two quartz crucibles.

[0053] The heating mechanism heated the quartz crucible containing the Al-Li 8090 alloy pieces to 800°C, melting the pieces. Similarly, the heating mechanism heated the quartz crucible containing the AZ91-Mg alloy pieces to 750°C, melting the pieces. Next, the quartz crucible containing the Al-Li 8090 alloy melt at a spray angle of 0° and the quartz crucible containing the AZ91-Mg alloy melt at a spray angle of 0° were placed in parallel, and the melt was sprayed toward a rotating substrate (rotation speed: 80 rpm). The cooling device rapidly cooled the melt on the substrate to 18°C, solidifying it. A ring-shaped heterometallic material (see FIG. 10) was obtained, which was a laminate (see FIG. 8) in which different metal layers were spirally stacked without an oxide layer between them.

[0054] [SEM-EDX measurement] The heterometallic materials according to the examples were subjected to SEM (scanning electron microscope)-EDX (energy dispersive X-ray analysis) measurements. Figures 12 and 13 are cross-sectional SEM-EDX images obtained by these measurements. Note that Figure 12 is a cross-sectional image in which Al was subjected to elemental analysis using an EDX device attached to the SEM. Figure 13 is a cross-sectional image in which Mg was subjected to elemental analysis using the EDX device. As shown in FIGS. 12 and 13, it can be seen that two types of metal layers are alternately stacked multiple times.

[0055] [Micro Vickers hardness measurement] The micro Vickers hardness (HV) of the heterometallic material according to the example was measured. Specifically, the thickness of the heterometallic material according to the example was reduced by 50% by cold rolling, and the micro Vickers hardness was measured immediately after rolling and after aging at 170°C for 8 hours after rolling. Figure 14 is a graph showing the measurement results. Note that the "●" shown in Figure 14 is a plot showing the literature value (literature value 1: data for Al-Li 8090 alloy only) described in "K. Dunkan, J. Martin, Journal of Material Science Letters 10 (1991) 1098-1100," and is a plot showing the measurement results of the micro-Vickers hardness immediately after rolling (plot shown on the left in Figure 14) and the micro-Vickers hardness after rolling and aging at 170°C for 8 hours (plot shown on the right in Figure 14). Furthermore, the "▲" shown in FIG. 14 is a plot showing the literature value (literature value 2: data for only the AZ91-Mg alloy) described in "Y. Li, Y. Chen, H. Cui, B. Xiung, J. Zhang, Materials Characterization, 60 (2009) 240-245," and is a plot showing the measurement results of the micro Vickers hardness immediately after rolling (plot shown on the left in FIG. 14) and the micro Vickers hardness after aging at 175°C for 8 hours after rolling (plot shown on the right in FIG. 14).

[0056] 14, it was confirmed that, in the literature values, the micro-Vickers hardness gradually increased by aging at 170 to 175°C. In contrast, the heterometallic material according to the example exhibited a micro-Vickers hardness that was intermediate between the literature values ​​immediately after rolling, but it was found that the micro-Vickers hardness increased significantly above the literature value by aging at 170 to 175°C. This result indicates that the manufacturing method of the present invention not only makes it possible to obtain a heterometallic material that simply exhibits intermediate physical properties between multiple metal species, but also that the multiple metal species can be integrated and combined to exhibit unique physical and chemical properties. [Explanation of symbols]

[0057] 1. Heterometallic material manufacturing equipment 10 PCB holder 11 Cooling device 12 Thermometer 20 Injection mechanism 21 Crucible 211 Nozzle 22 Gas atomizer 221 Through hole 222 Gas inlet 223 Gas flow path 224 Gas outlet 23 Heating mechanism 40 Chamber 41 Peephole 42 viewports 43 Radiation thermometer 44 Temperature display monitor 50 Mounting stand 60 Substrate rotation and lifting mechanism 70 High Frequency Oscillator 80 Exhaust system 81 Diffusion Pump 82 Rotary Pump 90 Control panel 91 Control device 92 Storage device 93 Communication Equipment 94 Input Devices 95 Display device 100 Gas supply device B board P, P1, P2 exhaust pipes P3 Branch Pipe S Surface of the substrate holder T Gas supply pipe T1~T4 branch pipe V Leak Valve V1~V3 valves V4~V8 flow control valve

Claims

1. A method for producing a heterometallic material, comprising spraying molten metal of different metal types from multiple nozzles toward a rotating substrate in an inert gas atmosphere, and rapidly cooling the sprayed material by the cooling action of the cooled substrate, thereby stacking layers of multiple metal types in a spiral pattern on the substrate.

2. The method for producing a heterometallic material according to claim 1 , wherein the direction of lamination of the metals is controlled by controlling the direction of injection of the molten metal.

3. The method for producing a heterogeneous metal material according to claim 1 or 2, wherein the molten metal is sprayed from at least one nozzle of the plurality of nozzles in the direction of the rotation axis of the substrate.

4. The method for producing a heterometallic material according to any one of claims 1 to 3, wherein the molten metal is sprayed from at least one nozzle of the plurality of nozzles in a direction oblique to the rotation axis of the substrate.

5. The method for producing a heterometallic material according to claim 1, wherein the rapid cooling is performed at a cooling rate of 1000° C. / s or more.

6. The method for producing a heterometallic material according to any one of claims 1 to 5, wherein the heterometallic material has an amorphous structure.

7. a substrate holder that rotatably holds a substrate and has a built-in cooling device; a crucible having a metal disposed therein and a nozzle at one end, a heating mechanism for heating and melting the metal, and a plurality of spray mechanisms for spraying the molten metal from the nozzle toward the rotating substrate, all of which are provided within a vacuum chamber whose interior can be replaced with an inert gas atmosphere; the crucible is supported by a rotation shaft so that the spray angle from the nozzle can be adjusted; The substrate holding unit rapidly cools the multiple types of molten metal jets jetted from the multiple jetting mechanisms onto the rotating substrate by the cooling action of the substrate cooled by the cooling device, thereby stacking layers of the multiple types of metal jetted from the multiple jetting mechanisms in a spiral shape on the substrate. Heterometallic material manufacturing equipment.

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