Semiconductor Devices

Abstract

To provide a semiconductor device capable of reducing a loss.SOLUTION: According to one embodiment, a semiconductor device includes first and second electrodes, a first conductive member, a semiconductor member, and an insulating member. The second electrode includes a first conductive portion. The first conductive member is provided between a first surface of the first electrode and a first conductive region. The semiconductor member includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a fifth semiconductor region of the first conductive type. The first semiconductor region includes first to third partial regions. The first partial region is provided between the first surface and the first conductive member in a first direction. A second direction from the first partial region to the second partial region intersects the first direction. A part of the second semiconductor region is provided between a part of the first conductive member and the first conductive portion. The second semiconductor region is provided between the third partial region and the third semiconductor region in the first direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] For example, in semiconductor devices, it is desirable to reduce losses. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2021-150483 Summary of the Invention [Problem to be solved by the invention]

[0004] An embodiment of the present invention provides a semiconductor device capable of reducing losses. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a first conductive member, a semiconductor member, and an insulating member. The first electrode includes a first surface. The second electrode includes a first conductive region and a first conductive portion. The first conductive portion is electrically connected to the first conductive region. The first conductive member is provided between the first surface and the first conductive region. The semiconductor member is provided between the first surface and the second electrode. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and the 1The semiconductor device includes a fourth semiconductor region of a conductivity type and a fifth semiconductor region of the first conductivity type. The first semiconductor region includes a first partial region, a second partial region, and a third partial region. The first partial region is located between the first surface and the first conductive member in a first direction perpendicular to the first surface. A second direction from the first partial region to the second partial region intersects with the first direction. The second partial region is located between the first surface and the third partial region in the first direction. A direction from the first conductive member to the third partial region is along the second direction. A portion of the second semiconductor region is located between a portion of the first conductive member and the first conductive portion. The second semiconductor region is located between the third partial region and the third semiconductor region in the first direction. A direction from another portion of the first conductive member to the third semiconductor region is along the second direction. A third carrier concentration of the second conductivity type in the third semiconductor region is higher than a second carrier concentration of the second conductivity type in the second semiconductor region. The fourth semiconductor region is between the first surface and the first partial region and between the first surface and the second partial region. The fifth semiconductor region is between at least a portion of the second semiconductor region and at least a portion of the first conductive portion in the first direction. The insulating member includes a first insulating region. The first insulating region is provided between the semiconductor member and the first conductive member. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 6]FIG. 6 is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment. [Figure 7] 7A and 7B are schematic cross-sectional views illustrating the semiconductor device according to the third embodiment. [Figure 8] FIG. 8 is a graph illustrating the characteristics of the semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a first conductive member 61, a semiconductor member 10M, and an insulating member 40.

[0009] The first electrode 51 includes a first surface 51f. The first surface 51f is, for example, the upper surface of the first electrode 51.

[0010] The second electrode 52 includes a first conductive region 52p and a first conductive portion 52a. The first conductive portion 52a is electrically connected to the first conductive region 52p. The material of the first conductive portion 52a may be different from the material of the first conductive region 52p. The material of the first conductive portion 52a may be the same as the material of the first conductive region 52p. The boundary between the first conductive portion 52a and the first conductive region 52p may be clear or unclear.

[0011] The first conductive member 61 is provided between the first surface 51f and the first conductive region 52p.

[0012] The semiconductor member 10M is provided between the first surface 51f and the second electrode 52. The semiconductor member 10M includes a first semiconductor region 11 of a first conductivity type, a second semiconductor region 12 of a second conductivity type, a third semiconductor region 13 of the second conductivity type, and a third semiconductor region 14 of the third conductivity type. 1 It includes a fourth semiconductor region 14 of the first conductivity type and a fifth semiconductor region 15 of the first conductivity type.

[0013] For example, the first conductivity type is n-type and the second conductivity type is p-type. In an embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. In the following, the first conductivity type is assumed to be n-type and the second conductivity type is assumed to be p-type.

[0014] The first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. The first partial region 11a is located between the first surface 51f and the first conductive member 61 in a first direction D1. The first direction D1 is perpendicular to the first surface 51f. The first direction D1 corresponds to the direction from the first surface 51f to the second electrode 52.

[0015] The first direction D1 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0016] A second direction D2 extending from the first partial region 11a to the second partial region 11b intersects with the first direction D1. The second direction D2 is, for example, the X-axis direction.

[0017] The second partial region 11b is located between the first surface 51f and the third partial region 11c in the first direction D1. At least a portion of the third partial region 11c is located between the second partial region 11b and the first conductive portion 52a in the first direction D1. The direction from the first conductive member 61 to the third partial region 11c is along the second direction D2.

[0018] The first partial region 11a is a region that overlaps with the first conductive member 61 in the first direction D1. The second partial region 11b and the third partial region 11c are regions that do not overlap with the first conductive member 61 in the first direction D1. The third partial region 11c is a region that overlaps with the first conductive member 61 in the second direction D2. The boundaries between the first partial region 11a, the second partial region 11b, and the third partial region 11c may be clear or unclear.

[0019] In the second direction D2, part of the second semiconductor region 12 is located between a part of the first conductive member 61 and the first conductive portion 52a. Another part of the second semiconductor region 12 is located between the third partial region 11c and the first conductive portion 52a.

[0020] A part of the second semiconductor region 12 is between the third partial region 11c and the third semiconductor region 13 in the first direction D1. The direction from another part of the first conductive member 61 to the third semiconductor region 13 is along the second direction D2. The third carrier concentration of the second conductivity type in the third semiconductor region 13 is higher than the second carrier concentration of the second conductivity type in the second semiconductor region 12. For example, the second semiconductor region 12 is a p layer. The third semiconductor region 13 is a p + The third semiconductor region 13 is electrically connected to the second electrode 52.

[0021] The fourth semiconductor region 14 is located between the first surface 51f and the first partial region 11a and between the first surface 51f and the second partial region 11b. The fifth semiconductor region 15 is located between at least a part of the second semiconductor region 12 and at least a part of the first conductive portion 52a in the first direction D1.

[0022] The insulating member 40 includes a first insulating region 41. The first insulating region 41 is provided between the semiconductor member 10M and the first conductive member 61. The first insulating region 41 electrically insulates the semiconductor member 10M and the first conductive member 61, for example.

[0023] The region including the first electrode 51, the second electrode 52, the first semiconductor region 11, the second semiconductor region 12, the third semiconductor region 13, and the fourth semiconductor region 14 is included in the first element 10A. The first element 10A functions as, for example, a diode. As will be described later, the semiconductor device 110 may further include a second element 10B. The second element 10B is, for example, an IGBT (Insulated Gate Bipolar Transistor). When the first element 10A is combined with the second element 10B, the first element 10A functions as, for example, an FWD (Free-Wheel Diode). The first element 10A and the second element 10B are, for example, reverse conducting IGBTs (RC-IGBTs).

[0024] In the first element 10A that functions as a diode, the first semiconductor region 11 is, for example, n - The second semiconductor region 12 corresponds to, for example, a p-type anode layer. The third semiconductor region 13 corresponds to, for example, a p-type anode layer. + The fourth semiconductor region 14 corresponds to, for example, an n-type cathode layer.

[0025] For example, the first conductive member 61 may be electrically connected to the second electrode 52. Alternatively, the first conductive member 61 may be electrically connected to the second electrode 52. For example, the first conductive member 61 may be electrically connected to the second electrode 52 by a connecting member 61L or the like at a position different from the position of the cross section in FIG. 1 . For example, a first conductive member terminal 61T may be provided that is electrically connected to the first conductive member 61. A second electrode terminal 52T may be provided that is electrically connected to the second electrode 52. These terminals may be connected by the connecting member 61L.

[0026] The first conductive member 61 is a dummy conductive portion having a structure similar to that of a third electrode 53 described later.

[0027] As described above, in the second direction D2, a part of the second semiconductor region 12 is located between a part of the first conductive member 61 and the first conductive portion 52a. For example, when the first surface 51f is used as a reference, the lower end of the first conductive portion 52a is located below the third semiconductor region 13. This can reduce loss, as will be described later.

[0028] 1, the distance along the first direction D1 between the first surface 51f and the first conductive portion 52a is defined as a first distance d1. The distance along the first direction D1 between the first surface 51f and the third semiconductor region 13 is defined as a second distance d2. The first distance d1 is shorter than the second distance d2.

[0029] When the FWD is conductive, for example, electrons injected from the first electrode 51 flow toward the second electrode 52, and holes are injected into the semiconductor member 10M. In the embodiment, a first conductive portion 52a is provided on the second electrode 52. The first conductive portion 52a enters the semiconductor member 10M and functions as a trench contact. For example, as described above, the first distance d1 is shorter than the second distance d2. This reduces the amount of holes injected into the semiconductor member 10M. This reduces recovery loss. According to the embodiment, a semiconductor device capable of reducing loss can be provided.

[0030] The fifth carrier concentration of the first conductivity type in the fifth semiconductor region 15 is higher than the first carrier concentration of the first conductivity type in the first semiconductor region 11. The first semiconductor region 11 is, for example, n - The fifth semiconductor region 15 is, for example, an n-layer. The fifth semiconductor region 15 functions as, for example, an n-contact layer.

[0031] In the embodiment, by providing the fifth semiconductor region 15 (e.g., n-contact layer), for example, the discharge of electrons is enhanced. The injection of holes can be further suppressed. According to the embodiment, the amount of holes injected into the semiconductor member 10M can be suppressed. The recovery loss can be reduced. According to the embodiment, a semiconductor device capable of reducing loss can be provided. The provision of the fifth semiconductor region 15 makes the structure complex. However, the improvement in characteristics that can be obtained outweighs the disadvantages of the complex structure.

[0032] In the embodiment, the semiconductor member 10M includes, for example, silicon. For example, the first semiconductor region 11 is n - It may comprise a silicon substrate. In an embodiment, the semiconductor member 10M may comprise, for example, SiC or GaN.

[0033] 1, the semiconductor device 110 may further include a third electrode 53. As shown in Fig. 1, the second electrode 52 may include a second conductive region 52q and a second conductive portion 52b. The second conductive portion 52b is electrically connected to the second conductive region 52q.

[0034] The material of the second conductive portion 52b may be different from the material of the second conductive region 52q. The material of the second conductive portion 52b may be the same as the material of the second conductive region 52q. The boundary between the second conductive portion 52b and the second conductive region 52q may be clear or unclear. The second conductive region 52q may be continuous with the first conductive region 52p. For example, the direction from the first conductive region 52p to the second conductive region 52q is along the second direction D2. For example, the direction from the first conductive portion 52a to the second conductive portion 52b is along the second direction D2.

[0035] The third electrode 53 is located between the first surface 51f and the second conductive region 52q. The semiconductor member 10M further includes a sixth semiconductor region 16 of the second conductivity type, a seventh semiconductor region 17 of the first conductivity type, and an eighth semiconductor region 18 of the second conductivity type. The first semiconductor region 11 includes a fourth partial region 11d, a fifth partial region 11e, and a sixth partial region 11f.

[0036] The fourth partial region 11d is located between the first surface 51f and the third electrode 53 in the first direction D1. The direction from the fourth partial region 11d to the fifth partial region 11e is along the second direction D2. The fifth partial region 11e is located between the first surface 51f and the sixth partial region 11f in the first direction D1. The direction from the third electrode 53 to the sixth partial region 11f is along the second direction D2.

[0037] The fourth partial region 11d is a region that overlaps with the third electrode 53 in the first direction D1. The fifth partial region 11e and the sixth partial region 11f are regions that do not overlap with the third electrode 53 in the first direction D1. The sixth partial region 11f is a region that overlaps with the third electrode 53 in the second direction D2. The boundaries between the fourth partial region 11d, the fifth partial region 11e, and the sixth partial region 11f may be clear or unclear.

[0038] In the second direction D2, a part of the sixth semiconductor region 16 is located between a part of the third electrode 53 and the second conductive portion 52b. The sixth semiconductor region 16 is located between the sixth partial region 11f and the seventh semiconductor region 17 in the first direction D1. The direction from the part of the third electrode 53 to the seventh semiconductor region 17 is along the second direction D2. The seventh semiconductor region 17 is located between another part of the third electrode 53 and the second conductive portion 52b.

[0039] The second electrode 52 is electrically connected to, for example, the seventh semiconductor region 17. The second electrode 52 may be electrically connected to the sixth semiconductor region 16.

[0040] The eighth semiconductor region 18 is located between the first surface 51f and the fourth partial region 11d, and between the first surface 51f and the fifth partial region 11e.

[0041] The insulating member 40 further includes a second insulating region 42. The second insulating region 42 is provided between the semiconductor member 10M and the third electrode 53.

[0042] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the second electrode 52.

[0043] The region including the third electrode 53, the sixth semiconductor region 16, the seventh semiconductor region 17, and the eighth semiconductor region 18 is included in the second element 10B. The second element 10B functions as, for example, an IGBT. In the second element 10B, the first electrode 51 functions as a collector electrode. The second electrode 52 functions as an emitter electrode. The third electrode 53 functions as a gate electrode.

[0044] In the second element 10B, the first semiconductor region 11 has n - The sixth semiconductor region 16 corresponds to a p-base layer. The seventh semiconductor region 17 corresponds to an n-emitter layer. The eighth semiconductor region 18 corresponds to a p-collector layer.

[0045] As shown in FIG. 1, the semiconductor member 10M may further include a ninth semiconductor region 19 of the second conductivity type. The ninth semiconductor region 19 is provided between the sixth semiconductor region 16 and the second conductive portion 52b. The ninth carrier concentration of the second conductivity type in the ninth semiconductor region 19 is higher than the sixth carrier concentration of the second conductivity type in the sixth semiconductor region 16. The sixth semiconductor region 16 is, for example, a p-layer. The ninth semiconductor region 19 is a p-layer or a p + The ninth semiconductor region 19 corresponds to, for example, a p-contact layer.

[0046] 1, the distance along the first direction D1 between the first surface 51f and the second conductive portion 52b is defined as a third distance d3. The distance along the first direction D1 between the first surface 51f and the seventh semiconductor region 17 is defined as a fourth distance d4. The third distance d3 is shorter than the fourth distance d4.

[0047] In the second element 10B (for example, FWD), the amount of holes injected into the semiconductor member 10M can be reduced, thereby reducing loss.

[0048] In the first element 10A of the semiconductor device 110, the first conductive portion 52a may be in Schottky contact with the fifth semiconductor region 15 (for example, an n-contact layer). For example, a high breakdown voltage can be easily obtained.

[0049] As described above, the second conductive portion 52b is included in the second element 10B (IGBT). On the other hand, the first conductive portion 52a is included in the first element 10A (FWD). The second conductive portion 52b may include a material different from the material included in the first conductive portion 52a.

[0050] For example, the first conductive portion 52a may include a material that easily forms Schottky contact with an n-type semiconductor (e.g., n-type silicon). In one example, the first conductive portion 52a may include at least one selected from the group consisting of Pt, V, Ti, TiN, Al, W, and Ni. In one example, the first conductive portion 52a may include at least one selected from the group consisting of Pt, V, Ti, TiN, and Ni. Meanwhile, the second conductive portion 52b may include a material that easily forms ohmic contact with a p-type semiconductor (e.g., p-type silicon). In one example, the second conductive portion 52b may include at least one selected from the group consisting of Al, W, and Ta. For example, the second conductive portion 52b may include at least one silicide selected from the group consisting of Al, W, and Ta. For example, the contact resistance between the first conductive portion 52 a and the fifth semiconductor region 15 may be higher than the contact resistance between the second conductive portion 52 b and the ninth semiconductor region 19 .

[0051] 1, the insulating member 40 may include a third insulating region 43. The third insulating region 43 is provided between the first conductive member 61 and the second electrode 52. The third insulating region 43 is provided between the third electrode 53 and the second electrode 52. For example, the third insulating region 43 is provided between the first conductive member 61 and the first conductive region 52p. The third insulating region 43 is provided between the third electrode 53 and the second conductive region 52q.

[0052] For example, the first conductive member 61 extends along a third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction. A plurality of first conductive members 61 may be provided. The direction from one of the plurality of first conductive members 61 to another of the plurality of first conductive members 61 is, for example, along the second direction D2.

[0053] For example, the third electrode 53 extends along the third direction D3. A plurality of third electrodes 53 may be provided. The direction from one of the plurality of third electrodes 53 to another of the plurality of third electrodes 53 is, for example, along the second direction D2.

[0054] A plurality of first conductive portions 52a may be provided corresponding to a plurality of first conductive members 61. A plurality of second conductive portions 52b may be provided corresponding to a plurality of third electrodes 53.

[0055] FIG. 2 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. Fig. 2 is a cross-sectional view corresponding to the A1-A2 line in Fig. 1. In Fig. 2, some elements such as the first electrode 51 are omitted.

[0056] As shown in FIG. 2, the semiconductor member 10M includes a cell portion 10C and an end portion 10P. The end portion 10P is located outside the cell portion 10C. A cell edge portion 10D may be provided between the cell portion 10C and the end portion 10P. The cell portion 10C and the cell edge portion 10D are, for example, an active area. The cell portion 10C may be, for example, a central portion of the active area.

[0057] 2, the fifth semiconductor region 15 has a strip shape and extends along the third direction D3.

[0058] As will be described below, the pattern shape of the fifth semiconductor region 15 may be changed in various ways.

[0059] (Second embodiment) FIG. 3 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. Fig. 3 is a cross-sectional view corresponding to the A1-A2 line in Fig. 1. In Fig. 3, some elements such as the first electrode 51 are omitted.

[0060] 3, the semiconductor device 120 according to the embodiment is provided with a plurality of fifth semiconductor regions 15. The configuration of the semiconductor device 120 other than this may be the same as the configuration of the semiconductor device 110.

[0061] 3, the direction from one of the plurality of fifth semiconductor regions 15 to another of the plurality of fifth semiconductor regions 15 is along the third direction D3. The third direction D3 is, for example, the Y-axis direction.

[0062] 3, the second semiconductor region 12 includes a first semiconductor portion 12a and a second semiconductor portion 12b. The direction from the first semiconductor portion 12a to the second semiconductor portion 12b is along the third direction D3. The fifth semiconductor region 15 is located between the first semiconductor portion 12a and the first conductive portion 52a in the first direction D1. The second semiconductor portion 12b contacts the first conductive portion 52a.

[0063] 3, a plurality of second semiconductor portions 12b may be provided. The direction from one of the plurality of second semiconductor portions 12b to another of the plurality of second semiconductor portions 12b is along the third direction D3. A plurality of first semiconductor portions 12a may be provided. The direction from one of the plurality of first semiconductor portions 12a to another of the plurality of first semiconductor portions 12a is along the third direction D3. One of the plurality of first semiconductor portions 12a is provided between one of the plurality of second semiconductor portions 12b and another of the plurality of second semiconductor portions 12b.

[0064] The semiconductor device 120 has a region where the fifth semiconductor region 15 is provided and a region where the fifth semiconductor region 15 is not provided. For example, the amount of hole injection can be adjusted by adjusting the area of ​​the fifth semiconductor region 15 (e.g., n-contact layer). This makes it possible to suppress losses (e.g., recovery loss) while achieving more appropriate operation.

[0065] FIG. 4 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. FIG. 4 is a cross-sectional view corresponding to the line A1-A2 in FIG. 1. is In FIG. 4, some elements such as the first electrode 51 are omitted.

[0066] 4, a plurality of fifth semiconductor regions 15 are also provided in the semiconductor device 121 according to the embodiment. In the semiconductor device 121, the distribution of the plurality of fifth semiconductor regions 15 is not uniform. Except for this, the configuration of the semiconductor device 121 may be similar to the configuration of the semiconductor device 120.

[0067] 4, in the semiconductor device 121, the fifth semiconductor region 15 has a continuous strip shape in the cell portion 10C. In the cell edge portion 10D, a plurality of fifth semiconductor regions 15 that are independent from each other are provided.

[0068] Thus, the semiconductor member 10M may include a cell portion 10C, a termination portion 10P outside the cell portion 10C, and a cell edge portion 10D between the cell portion 10C and the termination portion 10P. The first semiconductor portion 12a provided with the fifth semiconductor region 15 is provided in the cell portion 10C. The second semiconductor portion 12b not provided with the fifth semiconductor region 15 is provided in the cell edge portion 10D.

[0069] For example, in at least a part of the cell edge portion 10D, the fifth semiconductor region 15 is not provided, and the second semiconductor portion 12b is provided. For example, in the cell edge portion 10D, holes are effectively discharged during recovery operation. For example, 、F Loss during recovery can be effectively suppressed near the termination region in the WD region (cell edge portion 10D).

[0070] 4, an intermediate portion 10E may be provided between the cell portion 10C and the cell edge portion 10D. A plurality of fifth semiconductor regions 15 may be provided in the intermediate portion 10E. A first semiconductor portion 12a and a second semiconductor portion 12b may be provided in the intermediate portion 10E.

[0071] In the semiconductor device 121, for example, the area ratio of the fifth semiconductor region 15 to the unit area in the cell end portion 10D is lower than the area ratio of the fifth semiconductor region 15 to the unit area in the cell portion 10C.

[0072] FIG. 5 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. FIG. 5 is a cross-sectional view corresponding to the line A1-A2 in FIG. 1. is In FIG. 5, some elements such as the first electrode 51 are omitted.

[0073] 5, a plurality of fifth semiconductor regions 15 are also provided in the semiconductor device 122 according to the embodiment. The distribution of the plurality of fifth semiconductor regions 15 is not uniform in the semiconductor device 122 either. Except for this, the configuration of the semiconductor device 122 may be the same as the configuration of the semiconductor device 120.

[0074] 5, in the semiconductor device 122, the semiconductor member 10M includes a cell portion 10C, a termination portion 10P, and a cell edge portion 10D. In the semiconductor device 122, the first semiconductor portion 12a in which the fifth semiconductor region 15 is provided is provided in the cell edge portion 10D. In the cell edge portion 10D, the fifth semiconductor region 15 is strip-shaped. The second semiconductor portion 12b in which the fifth semiconductor region 15 is not provided is provided in the cell portion 10C.

[0075] In the semiconductor device 122, hole injection is suppressed in the cell edge portion 10D, and recovery loss can be effectively suppressed in the cell edge portion 10D.

[0076] In the semiconductor device 122, a plurality of fifth semiconductor regions 15 may be provided in the cell portion 10C. A plurality of first semiconductor portions 12a and a plurality of second semiconductor portions 12b may be provided in the cell portion 10C. For example, the direction from one of the plurality of second semiconductor portions 12b to another of the plurality of second semiconductor portions 12b is along the third direction D3.

[0077] In the semiconductor device 122, for example, the area ratio of the fifth semiconductor region 15 to the unit area in the cell end portion 10D is higher than the area ratio of the fifth semiconductor region 15 to the unit area in the cell portion 10C.

[0078] The distribution of the fifth semiconductor regions 15 described with respect to the semiconductor devices 120, 121, and 122 may be applied to each of the plurality of first conductive portions 52a.

[0079] (Third embodiment) FIG. 6 is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment. 7A and 7B are schematic cross-sectional views illustrating the semiconductor device according to the third embodiment. Fig. 7(a) is a cross-sectional view corresponding to the line B1-B2 in Fig. 6. Fig. 7(b) is a cross-sectional view corresponding to the line C1-C2 in Fig. 6.

[0080] 6, a semiconductor device 130 according to the embodiment includes a plurality of first conductive portions 52a. The plurality of first conductive portions 52a extend, for example, along the third direction D3. The direction from one of the plurality of first conductive portions 52a to another of the plurality of first conductive portions 52a is along the second direction D2.

[0081] As shown in Figure 6, the semiconductor member 10M includes a first cell portion 10CA and a second cell portion 10CB. The second cell portion 10CB is outside the first cell portion 10CA. The first cell portion 10CA may correspond to a central portion of the cell. The second cell portion 10CB may correspond to a portion on an end side of the cell. The direction from the first cell portion 10CA to the second cell portion 10CB is along the second direction D2.

[0082] 6, one of the plurality of first conductive portions 52a is provided in the first cell portion 10CA, and another of the plurality of first conductive portions 52a is provided in the second cell portion 10CB.

[0083] Fig. 7(a) illustrates a cross section of a portion corresponding to one of the plurality of first conductive portions 52a. Fig. 7(b) illustrates a cross section of a portion corresponding to another of the plurality of first conductive portions 52a. Some elements, such as the first electrode 51, are omitted from Figs. 7(a) and 7(b).

[0084] As shown in Fig. 7(a), the semiconductor member 10M includes a fifth semiconductor region 15 of the first conductivity type. The fifth semiconductor region 15 is located between the second semiconductor region 12 and one of the plurality of first conductive portions 52a in the first direction D1. In the example of Fig. 7(a), the fifth semiconductor region 15 is strip-shaped.

[0085] As shown in FIG. 7(b), at least a portion of the other one of the plurality of first conductive portions 52a contacts the second semiconductor region 12. In this example, a plurality of fifth semiconductor regions 15 are provided in the other one of the plurality of first conductive portions 52a. For example, a plurality of first semiconductor portions 12a and a plurality of second semiconductor portions 12b are provided. One of the plurality of fifth semiconductor regions 15 is located between one of the plurality of first semiconductor portions 12a and the other one of the plurality of first conductive portions 52a. The plurality of second semiconductor portions 12b contacts the other one of the plurality of first conductive portions 52a.

[0086] In the semiconductor device 130, for example, the area ratio of the fifth semiconductor region 15 to the unit area in the cell end portion 10D is lower than the area ratio of the fifth semiconductor region 15 to the unit area in the cell portion 10C.

[0087] For example, in the cell end portion 10D 、 During recovery operation, holes can be effectively discharged, and loss can be suppressed.

[0088] An example of the results of simulation of the characteristics of the semiconductor device will be described below. FIG. 8 is a graph illustrating the characteristics of the semiconductor device. Fig. 8 illustrates the characteristics of the first element 10A. The horizontal axis of Fig. 8 represents the forward voltage Vf. The vertical axis represents the normalized recovery loss Err1. Fig. 8 illustrates the characteristics of the first configuration CF1, the second configuration CF2, the third configuration CF3, and the fourth configuration CF4.

[0089] The first configuration CF1 corresponds to the semiconductor device 110 illustrated in FIG. 1. In the first configuration CF1, the second configuration CF2, and the third configuration CF3, a fifth semiconductor region 15 is provided. In the first configuration CF1, the fifth semiconductor region 15 is in contact with the first conductive portion 52a. In the second configuration CF2 and the third configuration CF3, the fifth semiconductor region 15 is separated from the first conductive portion 52a. In the second configuration CF2, the distance in the Z-axis direction between the fifth semiconductor region 15 and the first conductive portion 52a is 0.2 μm. In the third configuration CF3, the distance in the Z-axis direction between the fifth semiconductor region 15 and the first conductive portion 52a is 0.5 μm. In the fourth configuration CF4, the fifth semiconductor region 15 is not provided.

[0090] 8, in the first configuration CF1, a recovery loss Err1 that is lower than that in the fourth configuration CF4 that does not include the fifth semiconductor region 15. According to the embodiment, the recovery loss (normalized recovery loss Err1) can be reduced.

[0091] 2nd configuration CF 2 In the third configuration CF3, a lower recovery loss Err1 is obtained than in the fourth configuration CF4, which does not have the fifth semiconductor region 15. The recovery loss Err1 tends to increase as the fifth semiconductor region 15 is located further away from the first conductive portion 52a. The fifth semiconductor region 15 is preferably in contact with the first conductive portion 52a.

[0092] In the embodiment, at least one of the first electrode 51 and the second electrode 52 includes, for example, at least one selected from the group consisting of Al, Ti, Ni, W, and Au. The third electrode 53 may include, for example, polysilicon. The insulating member 40 may include, for example, silicon and oxygen. The insulating member 40 may include, for example, silicon oxide.

[0093] In some embodiments, information about the length and thickness may be obtained by electron microscope observation, etc. In some embodiments, the impurity concentration may be a carrier concentration. In some embodiments, the impurity concentration may be a concentration corresponding to the doping amount of impurities. Information about the distribution and absolute value of the impurity concentration in the semiconductor region may be obtained by, for example, secondary ion mass spectrometry (SIMS). The relative relationship between the impurity concentrations in two semiconductor regions may be determined by, for example, scanning capacitance microscopy (SCM). Information about the distribution and absolute value of the impurity concentration may be obtained by, for example, spreading resistance analysis (SRA). SCM and SRA may provide information about, for example, the relative relationship and absolute value of the carrier concentrations in the semiconductor region. For example, by assuming an activation rate of the impurities, the measurement results of SCM and SRA may provide information about at least one of the relative relationship between the impurity concentrations in two semiconductor regions, the distribution of the impurity concentrations, and the absolute value of the impurity concentrations.

[0094] Embodiments may include the following features. (Configuration 1) a first electrode including a first surface; a second electrode including a first conductive region and a first conductive portion, the first conductive portion being electrically connected to the first conductive region; a first conductive member provided between the first surface and the first conductive region; A semiconductor member provided between the first surface and the second electrode, the semiconductor member comprising: a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, the first partial region being between the first surface and the first conductive member in a first direction perpendicular to the first surface, a second direction from the first partial region to the second partial region intersecting the first direction, the second partial region being between the first surface and the third partial region in the first direction, and a direction from the first conductive member to the third partial region along the second direction; a second semiconductor region of a second conductivity type, a portion of the second semiconductor region being between a portion of the first conductive member and the first conductive portion; a third semiconductor region of the second conductivity type, the second semiconductor region being between the third partial region and the third semiconductor region in the first direction, a direction from another part of the first conductive member to the third semiconductor region being along the second direction, and a third carrier concentration of the second conductivity type in the third semiconductor region being higher than a second carrier concentration of the second conductivity type in the second semiconductor region; The above 1 a fourth semiconductor region of a conductivity type, the fourth semiconductor region being between the first surface and the first partial region and between the first surface and the second partial region; a fifth semiconductor region of the first conductivity type, the fifth semiconductor region being between at least a portion of the second semiconductor region and at least a portion of the first conductive portion in the first direction; The semiconductor member comprising: an insulating member including a first insulating region, the first insulating region being provided between the semiconductor member and the first conductive member; A semiconductor device comprising:

[0095] (Configuration 2) The semiconductor device of configuration 1, wherein a first distance along the first direction between the first surface and the first conductive portion is shorter than a second distance along the first direction between the first surface and the third semiconductor region.

[0096] (Configuration 3) 3. The semiconductor device according to claim 1, wherein the fifth semiconductor region is in contact with the at least a portion of the second semiconductor region.

[0097] (Configuration 4) the second semiconductor region includes a first semiconductor portion and a second semiconductor portion; a third direction from the first semiconductor portion to the second semiconductor portion intersects with a plane including the first direction and the second direction; the fifth semiconductor region is located between the first semiconductor portion and the first conductive portion in the first direction, 3. The semiconductor device according to claim 1, wherein the second semiconductor portion is in contact with the first conductive portion.

[0098] (Configuration 5) the semiconductor member includes a cell portion, a termination portion outside the cell portion, and a cell end portion between the cell portion and the termination portion; the first semiconductor portion is provided in the cell portion, 5. The semiconductor device according to configuration 4, wherein the second semiconductor portion is provided at the cell end portion.

[0099] (Configuration 6) a plurality of the second semiconductor portions are provided; The semiconductor device of configuration 5, wherein a direction from one of the plurality of second semiconductor portions to another of the plurality of second semiconductor portions is along the third direction.

[0100] (Configuration 7) the semiconductor member includes a cell portion, a termination portion outside the cell portion, and a cell end portion between the cell portion and the termination portion; the first semiconductor portion is provided at the cell edge portion, 5. The semiconductor device according to configuration 4, wherein the second semiconductor portion is provided in the cell portion.

[0101] (Configuration 8) a plurality of the second semiconductor portions are provided; 8. The semiconductor device of claim 7, wherein a direction from one of the plurality of second semiconductor portions to another of the plurality of second semiconductor portions is along the third direction.

[0102] (Configuration 9) a plurality of the first semiconductor portions are provided; a direction from one of the plurality of first semiconductor portions to another of the plurality of first semiconductor portions is along the third direction; 5. The semiconductor device of configuration 4, wherein the second semiconductor portion is between the one of the plurality of first semiconductor portions and the other one of the plurality of first semiconductor portions.

[0103] (Configuration 10) A plurality of the fifth semiconductor regions are provided, The semiconductor device of configuration 1 or 2, wherein the direction from one of the plurality of fifth semiconductor regions to another of the plurality of fifth semiconductor regions is along a third direction that intersects a plane including the first direction and the second direction.

[0104] (Configuration 11) A plurality of the first conductive portions are provided, a direction from one of the plurality of first conductive portions to another of the plurality of first conductive portions is along the second direction; the fifth semiconductor region is located between the second semiconductor region and the one of the plurality of first conductive portions in the first direction, 3. The semiconductor device according to configuration 1 or 2, wherein at least a portion of the other one of the plurality of first conductive portions is in contact with the second semiconductor region.

[0105] (Configuration 12) the semiconductor member includes a first cell portion and a second cell portion outside the first cell portion, the one of the plurality of first conductive parts is provided in the first cell portion, 12. The semiconductor device of claim 11, wherein the other one of the plurality of first conductive portions is provided in the second cell portion.

[0106] (Configuration 13) 13. The semiconductor device according to any one of configurations 1 to 12, wherein the first conductive portion is in Schottky contact with the fifth semiconductor region.

[0107] (Configuration 14) the first conductive member is electrically connected to the second electrode; or 14. The semiconductor device according to any one of configurations 1 to 13, wherein the first conductive member is capable of being electrically connected to the second electrode.

[0108] (Configuration 15) Further comprising a third electrode; the second electrode includes a second conductive region and a second conductive portion; the second conductive portion is electrically connected to the second conductive region, a direction from the first conductive region to the second conductive region along the second direction; the third electrode is between the first surface and the second conductive region; the semiconductor member further includes a sixth semiconductor region of the second conductivity type, a seventh semiconductor region of the first conductivity type, and an eighth semiconductor region of the second conductivity type; the first semiconductor region includes a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being between the first surface and the third electrode in the first direction, a direction from the fourth partial region to the fifth partial region being along the second direction, the fifth partial region being between the first surface and the sixth partial region in the first direction, and a direction from the third electrode to the sixth partial region being along the second direction, a part of the sixth semiconductor region is located between a part of the third electrode and the second conductive portion in the second direction; the sixth semiconductor region is located between the sixth partial region and the seventh semiconductor region in the first direction, the seventh semiconductor region is located between another part of the third electrode and the second conductive portion; the eighth semiconductor region is between the first surface and the fourth partial region and between the first surface and the fifth partial region, the insulating member further includes a second insulating region; 13. The semiconductor device according to any one of configurations 1 to 12, wherein the second insulating region is provided between the semiconductor member and the third electrode.

[0109] (Configuration 16) the semiconductor member further includes a ninth semiconductor region of the second conductivity type, the ninth semiconductor region is provided between the sixth semiconductor region and the second conductive portion, 16. The semiconductor device according to configuration 15, wherein a ninth carrier concentration of the second conductivity type in the ninth semiconductor region is higher than a sixth carrier concentration of the second conductivity type in the sixth semiconductor region.

[0110] (Configuration 17) 17. The semiconductor device according to structure 15 or 16, wherein the first conductive portion is in Schottky contact with the fifth semiconductor region.

[0111] (Configuration 18) 18. The semiconductor device according to any one of configurations 15 to 17, wherein the second conductive portion includes a material different from a material included in the first conductive portion.

[0112] (Configuration 19) the first conductive portion includes at least one selected from the group consisting of Pt, V, Ti, TiN, and Ni, 18. The semiconductor device according to any one of configurations 15 to 17, wherein the second conductive portion includes at least one selected from the group consisting of Al, W, and Ta.

[0113] (Configuration 20) 20. The semiconductor device according to any one of configurations 1 to 19, wherein a fifth carrier concentration of the first conductivity type in the fifth semiconductor region is higher than a first carrier concentration of the first conductivity type in the first semiconductor region.

[0114] According to the embodiment, it is possible to provide a semiconductor device that can reduce loss.

[0115] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the semiconductor device, such as the semiconductor member, semiconductor region, electrode, and insulating member, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0116] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0117] In addition, all semiconductor devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0118] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0119] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0120] 10A, 10B...first and second elements, 10C...cell portion, 10CA, 10CB...first and second cell portions, 10D...cell edge portion, 10E...intermediate portion, 10M...semiconductor member, 10P...terminal portion, 11-19...first to ninth semiconductor regions, 11a-11f...first to sixth partial regions, 12a, 12b...first and second semiconductor portions, 40...insulating member, 41-43...first to third insulating regions, 51-53...first to third electrodes, 51f...first surface, 52T...second electrode terminal, 52a, 52b...first and second conductive portions, 52p, 52q...first and second conductive regions, 61...first conductive member, 61L...connecting member, 61T...first conductive member terminal, 110, 120 to 122, 130...semiconductor device, CF1 to CF4...first to fourth configuration, D1 to D3...first to third direction, Err1...recovery loss, Vf...forward voltage, d1 to d4...first to fourth distance

Claims

1. a first electrode including a first surface; a second electrode including a first conductive region and a first conductive portion, the first conductive portion being electrically connected to the first conductive region; a first conductive member provided between the first surface and the first conductive region; A semiconductor member provided between the first surface and the second electrode, the semiconductor member comprising: a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, the first partial region being between the first surface and the first conductive member in a first direction perpendicular to the first surface, a second direction from the first partial region to the second partial region intersecting the first direction, the second partial region being between the first surface and the third partial region in the first direction, and a direction from the first conductive member to the third partial region along the second direction; a second semiconductor region of a second conductivity type, a portion of the second semiconductor region being between a portion of the first conductive member and the first conductive portion; a third semiconductor region of the second conductivity type, the second semiconductor region being between the third partial region and the third semiconductor region in the first direction, a direction from another part of the first conductive member to the third semiconductor region being along the second direction, and a third carrier concentration of the second conductivity type in the third semiconductor region being higher than a second carrier concentration of the second conductivity type in the second semiconductor region; a fourth semiconductor region of the first conductivity type, the fourth semiconductor region being between the first surface and the first partial region and between the first surface and the second partial region; a fifth semiconductor region of the first conductivity type, the fifth semiconductor region being located between at least a portion of the second semiconductor region and at least a portion of the first conductive portion in the first direction; The semiconductor member comprising: an insulating member including a first insulating region, the first insulating region being provided between the semiconductor member and the first conductive member; Equipped with the second semiconductor region includes a first semiconductor portion and a second semiconductor portion; a third direction from the first semiconductor portion to the second semiconductor portion intersects with a plane including the first direction and the second direction; the fifth semiconductor region is located between the first semiconductor portion and the first conductive portion in the first direction, The second semiconductor portion is in contact with the first conductive portion.

2. the semiconductor member includes a cell portion, a termination portion outside the cell portion, and a cell end portion between the cell portion and the termination portion; the first semiconductor portion is provided in the cell portion, The semiconductor device according to claim 1 , wherein the second semiconductor portion is provided in the cell end portion.

3. the fifth semiconductor region and the first insulating region are spaced apart, The semiconductor device according to claim 1 , wherein the fourth semiconductor region is in direct contact with the first electrode.

4. a first electrode including a first surface; a second electrode including a first conductive region and a first conductive portion, the first conductive portion being electrically connected to the first conductive region; a first conductive member provided between the first surface and the first conductive region; A semiconductor member provided between the first surface and the second electrode, the semiconductor member comprising: a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, the first partial region being between the first surface and the first conductive member in a first direction perpendicular to the first surface, a second direction from the first partial region to the second partial region intersecting the first direction, the second partial region being between the first surface and the third partial region in the first direction, and a direction from the first conductive member to the third partial region along the second direction; a second semiconductor region of a second conductivity type, a portion of the second semiconductor region being between a portion of the first conductive member and the first conductive portion; a third semiconductor region of the second conductivity type, the second semiconductor region being between the third partial region and the third semiconductor region in the first direction, a direction from another part of the first conductive member to the third semiconductor region being along the second direction, and a third carrier concentration of the second conductivity type in the third semiconductor region being higher than a second carrier concentration of the second conductivity type in the second semiconductor region; a fourth semiconductor region of the first conductivity type, the fourth semiconductor region being between the first surface and the first partial region and between the first surface and the second partial region; a fifth semiconductor region of the first conductivity type, the fifth semiconductor region being located between at least a portion of the second semiconductor region and at least a portion of the first conductive portion in the first direction; The semiconductor member comprising: an insulating member including a first insulating region, the first insulating region being provided between the semiconductor member and the first conductive member; Equipped with Further comprising a third electrode; the second electrode includes a second conductive region and a second conductive portion; the second conductive portion is electrically connected to the second conductive region, a direction from the first conductive region to the second conductive region is along the second direction; the third electrode is between the first surface and the second conductive region; The semiconductor member further includes a sixth semiconductor region of the second conductivity type, a seventh semiconductor region of the first conductivity type, and an eighth semiconductor region of the second conductivity type, the first semiconductor region includes a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being between the first surface and the third electrode in the first direction, a direction from the fourth partial region to the fifth partial region being along the second direction, the fifth partial region being between the first surface and the sixth partial region in the first direction, and a direction from the third electrode to the sixth partial region being along the second direction, a part of the sixth semiconductor region is located between a part of the third electrode and the second conductive portion in the second direction; the sixth semiconductor region is located between the sixth partial region and the seventh semiconductor region in the first direction, the seventh semiconductor region is located between another part of the third electrode and the second conductive portion; the eighth semiconductor region is between the first surface and the fourth partial region and between the first surface and the fifth partial region, the insulating member further includes a second insulating region; the second insulating region is provided between the semiconductor member and the third electrode, The semiconductor device, wherein the second conductive portion includes a material different from a material included in the first conductive portion.

5. a first electrode including a first surface; a second electrode including a first conductive region and a first conductive portion, the first conductive portion being electrically connected to the first conductive region; a first conductive member provided between the first surface and the first conductive region; A semiconductor member provided between the first surface and the second electrode, the semiconductor member comprising: a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, the first partial region being between the first surface and the first conductive member in a first direction perpendicular to the first surface, a second direction from the first partial region to the second partial region intersecting the first direction, the second partial region being between the first surface and the third partial region in the first direction, and a direction from the first conductive member to the third partial region along the second direction; a second semiconductor region of a second conductivity type, a portion of the second semiconductor region being between a portion of the first conductive member and the first conductive portion; a third semiconductor region of the second conductivity type, the second semiconductor region being between the third partial region and the third semiconductor region in the first direction, a direction from another part of the first conductive member to the third semiconductor region being along the second direction, and a third carrier concentration of the second conductivity type in the third semiconductor region being higher than a second carrier concentration of the second conductivity type in the second semiconductor region; a fourth semiconductor region of the first conductivity type, the fourth semiconductor region being between the first surface and the first partial region and between the first surface and the second partial region; a fifth semiconductor region of the first conductivity type, the fifth semiconductor region being located between at least a portion of the second semiconductor region and at least a portion of the first conductive portion in the first direction; The semiconductor member comprising: an insulating member including a first insulating region, the first insulating region being provided between the semiconductor member and the first conductive member; Equipped with the fifth semiconductor region and the first insulating region are spaced apart, The fourth semiconductor region is in direct contact with the first electrode.

6. The semiconductor device according to claim 5 , wherein the fifth semiconductor region is in contact with the at least a portion of the second semiconductor region.

7. A plurality of the first conductive portions are provided, a direction from one of the plurality of first conductive portions to another of the plurality of first conductive portions is along the second direction; the fifth semiconductor region is located between the second semiconductor region and the one of the plurality of first conductive parts in the first direction, The semiconductor device according to claim 5 , wherein at least a portion of the other one of the plurality of first conductive portions is in contact with the second semiconductor region.

8. the semiconductor member includes a first cell portion and a second cell portion outside the first cell portion; the one of the plurality of first conductive parts is provided in the first cell portion, The semiconductor device according to claim 7 , wherein the other one of the plurality of first conductive parts is provided in the second cell portion.

9. The semiconductor device according to claim 5 , wherein the first conductive portion is in Schottky contact with the fifth semiconductor region.

10. Further comprising a third electrode; the second electrode includes a second conductive region and a second conductive portion; the second conductive portion is electrically connected to the second conductive region, a direction from the first conductive region to the second conductive region is along the second direction; the third electrode is between the first surface and the second conductive region; The semiconductor member further includes a sixth semiconductor region of the second conductivity type, a seventh semiconductor region of the first conductivity type, and an eighth semiconductor region of the second conductivity type, the first semiconductor region includes a fourth partial region, a fifth partial region, and a sixth partial region, the fourth partial region being between the first surface and the third electrode in the first direction, a direction from the fourth partial region to the fifth partial region being along the second direction, the fifth partial region being between the first surface and the sixth partial region in the first direction, and a direction from the third electrode to the sixth partial region being along the second direction, a part of the sixth semiconductor region is located between a part of the third electrode and the second conductive portion in the second direction; the sixth semiconductor region is located between the sixth partial region and the seventh semiconductor region in the first direction, the seventh semiconductor region is located between another part of the third electrode and the second conductive portion; the eighth semiconductor region is between the first surface and the fourth partial region and between the first surface and the fifth partial region, the insulating member further includes a second insulating region; 10. The semiconductor device according to claim 5, wherein the second insulating region is provided between the semiconductor member and the third electrode.

11. The semiconductor member further includes a ninth semiconductor region of the second conductivity type, the ninth semiconductor region is provided between the sixth semiconductor region and the second conductive portion, 11. The semiconductor device according to claim 10, wherein a ninth carrier concentration of the second conductivity type in the ninth semiconductor region is higher than a sixth carrier concentration of the second conductivity type in the sixth semiconductor region.

12. The semiconductor device according to claim 10 , wherein the second conductive portion includes a material different from a material included in the first conductive portion.

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