Semiconductor Package

Abstract

To provide a semiconductor package which can be easily manufactured while improving reliability of optical transmission / reception.SOLUTION: A semiconductor package 1 includes: a sheet-like substrate 10; and a light receiving element 20 which is provided on the surface of the substrate 10 and has a light receiving part 21 on the surface side; a light emitting element 30 provided in a light emitting element region 12 on the surface of the substrate 10; a wire 40 connecting the substrate 10 and the light receiving element 20; and a resin sealing part 60 which is formed by resin on the surface of the substrate 10 and seals at least the wire 40. The resin sealing part 60 is provided with: a first opening 63 opened so that the light receiving part 21 of the light receiving element 20 is exposed to a surface side; a second opening 64 which opens to the surface side so that the light emitting element region 12 is exposed and can arrange the light-emitting element 30 in the light emitting element region 12; and a wall part 62 standing between the first opening 63 and the second opening 64.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to semiconductor packages. [Background technology]

[0002] Conventionally, optical semiconductor packages have been known in which a light-emitting element, such as a light-emitting diode (LED), and a light-receiving element, such as a photodiode (PD), are mounted. Optical semiconductor packages are integrated into a single optical semiconductor package to achieve miniaturization, thinning, high integration, and cost savings. In such semiconductor packages, light emitted from the light-emitting element is emitted to the outside, but some of the light is reflected and emitted into the semiconductor package as stray light. If this stray light component is irradiated onto the light-receiving element, noise, communication interference, and other problems can occur, resulting in communication failure. The optical semiconductor element package described in Patent Document 1 has a light-absorbing member made of an inorganic material attached to the inner surface of a lid member. This light-absorbing member can absorb stray light directed toward the lid member, thereby reducing the amount of light mistakenly received by the light-receiving element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-189430 Summary of the Invention [Problem to be solved by the invention]

[0004] However, light-emitting elements may emit light in directions other than the set direction. The optical semiconductor element package described in Patent Document 1 can absorb light emitted in a set direction by the light-emitting element (optical semiconductor element) that is reflected by an optical lens or other optical component, but cannot absorb light emitted in a direction other than the set direction by the light-emitting element, and the light enters the light-receiving element. This causes the light-receiving element (optical semiconductor element) to receive the reflected light, resulting in a malfunction of the optical semiconductor element.

[0005] In view of the above circumstances, an object of the present invention is to provide a semiconductor package that can be easily manufactured while improving the reliability of optical transmission and reception. [Means for solving the problem]

[0006] In order to solve the above problems, the present invention proposes the following means. A semiconductor package according to a first aspect of the present invention is a semiconductor package comprising a sheet-like base, a light-receiving element provided on the surface of the base and having a light-receiving portion on the surface side, a light-emitting element provided in a light-emitting element region on the surface of the base, a wire connecting the base and the light-receiving element, and a resin sealing portion formed of resin on the surface of the base and sealing at least the wire, wherein the resin sealing portion comprises a first opening that opens so that the light-receiving portion of the light-receiving element is exposed on the surface side, a second opening that opens on the surface side so that the light-emitting element region is exposed and which allows the light-emitting element to be placed in the light-emitting element region, and a wall portion erected between the first opening and the second opening.

[0007] According to a second aspect of the present invention, in the semiconductor package according to the first aspect, the height of the upper surface of the wall portion is approximately the same as the height of the light receiving surface of the light receiving element in the thickness direction of the base.

[0008] According to a third aspect of the present invention, in the semiconductor package according to the first or second aspect, the side surfaces and the outer edge of the surface of the light receiving element are covered with the resin sealing portion.

[0009] According to a fourth aspect of the present invention, in the semiconductor package according to any one of the first to third aspects, the resin sealing portion is formed from a resin material having a light-shielding property.

[0010] According to a fifth aspect of the present invention, in the semiconductor package according to any one of the first to third aspects, the resin sealing portion is formed of a black resin material.

[0011] According to a sixth aspect of the present invention, a semiconductor package relating to any one of the first to fifth aspects further includes a plate-shaped lid body that closes the first opening and the second opening that open on the surface. [Effects of the Invention]

[0012] The semiconductor package according to the present invention can be easily manufactured while improving the reliability of optical transmission and reception. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is an external view of a semiconductor package according to an embodiment of the present invention, as viewed from the front surface side; [Figure 2] 2 is a side view showing the internal configuration of the semiconductor package taken along the line AA in FIG. 1. [Figure 3] 2 is a diagram showing the semiconductor package of FIG. 1, with the resin sealing portion and the lid removed, as seen from the front side. [Figure 4] 1A and 1B are diagrams illustrating an example of a manufacturing process for the semiconductor package, in which (a) shows the semiconductor package being molded, (b) shows the semiconductor package being cut into individual semiconductor packages after molding, and (c) shows the lid of the semiconductor package closing the first opening and the second opening. [Figure 5] 2A and 2B are diagrams showing a lower mold die and an upper mold die used in the manufacturing process of the semiconductor package. [Figure 6] 10A and 10B are diagrams illustrating a modified example of a semiconductor package according to an embodiment of the present invention. [Figure 7] 10A and 10B are diagrams illustrating a modified example of a semiconductor package according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] (One embodiment) An embodiment of the present invention will be described with reference to Figures 1 to 5. In the embodiments and modifications described below, corresponding components will be denoted by the same reference numerals, and descriptions of overlapping parts may be omitted. Furthermore, in the following description, expressions indicating relative or absolute arrangements, such as "parallel," "orthogonal," "center," and "coaxial," not only strictly indicate such arrangements, but also indicate a state in which there is a relative displacement with a tolerance or an angle or distance that provides the same function.

[0015] FIG. 1 is an external view of a semiconductor package 1 according to an embodiment of the present invention, as seen from the front side. FIG. 2 is a side view showing the internal configuration of the semiconductor package 1 along the AA cross section of FIG. 1. FIG. 3 is a view of the semiconductor package 1 as seen from the front side, with the resin sealing portion 60 and the lid 70 removed. FIG. 4 is a diagram illustrating an example of a manufacturing process for the semiconductor package 1, in which (a) is a diagram showing the semiconductor package 1 being molded. (b) is a diagram showing the semiconductor package 1 being cut into individual semiconductor packages 1 after molding. (c) is a diagram showing the lid 70 of the semiconductor package closing the first opening 63 and the second opening 64. FIG. 5 is a diagram showing a lower mold die 80 and an upper mold die 90 used in the manufacturing process for the semiconductor package 1.

[0016] 1 and 2, the semiconductor package 1 is an optical semiconductor device having a function of converting electric current into light. The semiconductor package 1 also has a function of converting light into electric current. The semiconductor package 1 includes a substrate (base) 10, a light receiving element 20, a light emitting element 30, connecting wires 40, light emitting element wires 50, a resin sealing portion 60, and a lid 70.

[0017] As shown in FIGS. 1 to 3 , the substrate (base) 10 is, for example, sheet-shaped and has a front surface 10f higher than a back surface 10g at the top in the thickness direction D of the semiconductor package 1, and a back surface 10g at the bottom. When viewed from a front surface side D1 of the thickness direction D, the substrate 10 has a rectangular shape with opposing long sides 10a in a long side direction X along a plane perpendicular to the thickness direction D (hereinafter referred to as a horizontal plane) and opposing short sides 10b in a short side direction Y perpendicular to the long side direction X on the horizontal plane. Here, the thickness direction D is a direction having a front surface side D1 on which the front surface 10f of the substrate 10 is located and a back surface side D2 on which the back surface 10g is located. In the long side direction X, one side is referred to as the left side X1, and the opposite side is referred to as the right side X2. In the short side direction Y, one side is referred to as the upper side Y1, and the opposite side is referred to as the lower side Y2. The short side direction Y does not necessarily have to be perpendicular to the long side direction X in the horizontal plane. Furthermore, the long side 10a and the short side 10b may or may not have the same length.

[0018] The substrate 10 may be, for example, a glass epoxy substrate. Alternatively, the substrate 10 may be an electrically insulating resin substrate such as a liquid crystal polymer substrate or a PPS (polyphenylene sulfide) resin substrate. Furthermore, the substrate 10 may be made of, for example, gallium arsenide (GaAs), indium phosphide (InP), indium gallium nitride (InGaN), sapphire, silicon (Si), or silicon carbide (SiC). Alternatively, the substrate 10 may be made of a metal substrate with high thermal conductivity, such as an aluminum substrate or a copper substrate, for the purpose of efficiently dissipating heat generated by the light-emitting element 30. Alternatively, the substrate 10 may be formed by stacking substrates made of multiple different materials.

[0019] The substrate 10 is provided so that the wiring forms a predetermined circuit. However, the method for forming the wiring is not particularly limited. The substrate 10 may also be a substrate using a lead frame or the like.

[0020] As shown in FIG. 3, the substrate 10 includes a plurality of terminal portions 11, a light emitting element region 12, and a terminal portion 13 for the light emitting element.

[0021] The plurality of terminal portions 11 are provided on the surface 10f of the substrate 10. The plurality of terminal portions 11 are provided so as to surround the periphery of the light receiving element 20 in directions other than the right side X2 of the long side direction X where a central wall 62 of a resin sealing portion 60, which will be described later, is located. The plurality of terminal portions 11 are electrically connected to a plurality of connection electrodes (not shown) provided on the light receiving element 20.

[0022] The light emitting element region 12 is provided on the surface 10f of the substrate 10 and is exposed on the surface side D1. The light emitting element 30 is placed in the light emitting element region 12. The light emitting element region 12 is set to a size such that the light emitting element 30 can be easily placed thereon and the light emitting element terminal portion 13 can be arranged around the light emitting element 30.

[0023] The light-emitting element terminal portion 13 is disposed in the light-emitting element region 12 provided on the surface 10f. The light-emitting element terminal portion 13 is provided around the light-emitting element 30 placed on the surface 10f, and is electrically connected to a connection electrode (not shown) of the light-emitting element 30 via the light-emitting element wire 50.

[0024] As shown in FIGS. 1 to 3, the light-receiving element 20 is composed of a chip such as a photodiode (PD). The light-receiving element 20 is formed, for example, in a rectangular shape when viewed from the surface side D1 in the thickness direction D. The light-receiving element 20 is fixed to the surface 10f of the substrate 10 with a light-receiving portion 21 on the light-receiving surface 20f of the light-receiving element 20. As shown in FIG. 3, the light-receiving element 20 has a plurality of connection electrodes (not shown) on the outer edge 22 of the light-receiving surface 20f, excluding the light-receiving portion 21 and the outer edge on the right side X2. The light-receiving element 20 also has a left side surface 23a on the left side X1 in the long-side direction X and a right side surface 23b on the right side X2 on the side surface 23, an upper side surface 23c on the upper side Y1 in the short-side direction Y, and a lower side surface 23d on the lower side Y2. The side surface 23 and the outer edge 22 of the light-receiving element 20 are covered with a resin sealing portion 60.

[0025] It should be noted that a phototransistor may be used instead of a photodiode as the light receiving element 20. Furthermore, the light receiving element 20 may be, for example, an imaging element having a light receiving portion such as a CMOS image sensor or a CCD image sensor.

[0026] As shown in FIGS. 1 to 3, the light-emitting element 30 is disposed on the right side X2 of the light-receiving element 20 and is fixed to the surface 10f of the substrate 10. The light-emitting element 30 is, for example, a light-emitting diode (LED). The light-emitting element 30 is not particularly limited as long as it is a light-emitting element using a semiconductor, and a semiconductor laser (LD) or the like may also be used. The light-emitting element 30 has a connection electrode (not shown) on the surface 30f. The connection electrode of the light-emitting element 30 is electrically connected to the light-emitting element terminal portion 13 via the light-emitting element wire 50.

[0027] 1 to 3, the connection wire (wire) 40 electrically connects the light receiving element 20 and the substrate 10. In this embodiment, a gold (Au) wire is used as the connection wire 40. The connection wire 40 is connected by wire bonding.

[0028] The connecting wires 40 are not limited to gold wires, but may be copper wires, palladium-coated copper wires, aluminum wires, etc. In this embodiment, the connecting wires connect the light-receiving element 20 and the substrate 10 by wire bonding, but instead of wire bonding, electrical wiring may be joined to the connecting electrodes of the light-receiving element 20 by soldering or the like. Furthermore, gold stud bumps or the like may be formed on the surfaces of the connecting electrodes, and the electrical wiring may be joined to these gold stud bumps by soldering or the like.

[0029] 1 to 3, the light-emitting element wire 50 electrically connects the connection electrode (not shown) of the light-emitting element 30 to the light-emitting element terminal portion 13 of the substrate 10. In this embodiment, the light-emitting element wire 50 is connected by wire bonding. In this embodiment, the light-emitting element wire 50 uses a gold (Au) wire, but like the connection wire 40, it may be made of another material.

[0030] As shown in FIGS. 1 and 2 , the resin encapsulation portion 60 is a protective material provided on the surface 10f of the substrate 10 by molding. The resin encapsulation portion 60 is made of a low-thermal-conductivity resin material, which is black and is formed by adding a black pigment such as carbon black. Therefore, the resin encapsulation portion 60 can effectively absorb light emitted in directions other than the intended direction of the light-emitting element 30. Furthermore, the resin encapsulation portion 60 can prevent such light from becoming noise and affecting the operation of the light-receiving element 20. Furthermore, by using a low-thermal-conductivity resin material for the resin encapsulation portion 60, heat generated by the light-emitting element 30 can be suppressed. Therefore, the heat generated by the light-emitting element 30 can be prevented from affecting the operation of the light-receiving element 20. However, the resin encapsulation portion 60 is not particularly limited as long as it is made of a resin material, and may be a transparent resin material or a light-blocking resin material. The resin encapsulation portion 60 may also be made of a resin material, such as an epoxy-based resin material or a silicone-based resin, that is opaque to visible light and infrared light.

[0031] The resin sealing portion 60 includes an outer frame wall 61 , a central wall (wall portion) 62 , a first opening 63 , and a second opening 64 .

[0032] The outer frame wall 61 is formed on the outer frame of the substrate 10 so as to surround the light receiving element 20 and the light emitting element 30, and stands on a surface side D1 from the surface of the substrate 10 in the thickness direction D. The outer frame wall 61 seals the connection wires 40 that connect the light receiving element 20 and the substrate 10. Note that a surface 61f of the outer frame wall 61 is located higher than a surface 20f of the light receiving element 20 in the thickness direction D. The outer frame wall 61 is also formed so as to cover the left side surface 23a, upper side surface 23c, lower side surface 23d, and outer edge portion 22 of the surface 20f of the light receiving element 20 from the surface side D1.

[0033] The central wall (wall portion) 62 stands from the surface 10f of the substrate 10 toward the surface side D1 along the thickness direction D. The central wall 62 has a first side surface 62a on the left side X1 of the central wall 62, a second side surface 62b on the right side X2 of the central wall 62, and an upper surface 62f on the surface side D1. The central wall 62 is disposed so that the first side surface 62a abuts against the right side surface 23b of the light receiving element 20. In this embodiment, the height of the upper surface 62f of the central wall 62 in the thickness direction D is approximately the same height as the light receiving surface 20f of the light receiving element 20.

[0034] 1 and 2, the first opening 63 is an opening provided in the light-receiving surface 20f of the light-receiving element 20. The first opening 63 opens to the front surface side D1 so that at least the light-receiving unit 21 provided on the light-receiving surface 20f of the light-receiving element 20 is exposed. With this configuration, the light-receiving unit 21 can receive light from the outside. Note that the size of the first opening 63 can be set arbitrarily as long as at least the light-receiving unit 21 is exposed.

[0035] 1 and 2, the second opening 64 is located to the right X2 of the first opening 63 and is an opening portion provided in the surface 10f of the substrate 10. The second opening 64 is open so as to expose the light-emitting element region 12 provided in the surface 10f of the substrate 10 to the front side D1. With this configuration, the light-emitting element 30 placed in the light-emitting element region 12 can emit light to the outside. The inner surface of the second opening 64 forms part of the second side surface 62b of the outer frame wall 61.

[0036] In this embodiment, the height of the upper surface 62f of the central wall 62 is approximately the same as the height of the light receiving surface 20f of the light receiving element 20 in the thickness direction D, so that a part of the right side X2 of the first opening 63 and a part of the left side X1 of the second opening 64 are connected to form one large opening. Note that the first opening 63 and the second opening 64 may be separated by the central wall 62 and may be independent openings.

[0037] The lid 70 is a plate-shaped, translucent cap. The lid 70 hermetically seals or protects the first opening 63 and the second opening 64 by closing them from the front surface side D1. The lid 70 can be made of, for example, a polymer resin film (such as polyimide, polyamide, or polyamideimide). It may also be made of acrylic resin or borosilicate glass. The lid 70 of this embodiment may be made of quartz glass (essentially an ultraviolet cut filter) or the like, as long as it can physically protect the light-receiving portion 21 of the light-receiving element 20 and the light-emitting element 30 exposed on the front surface side D1. The lid 70 may also be made of a material containing a fluorescent substance that absorbs emitted light and emits light of a different wavelength.

[0038] Next, a manufacturing method of the semiconductor package 1 in this embodiment will be described with reference to FIGS. 4 and 5. FIG. 4 is a diagram illustrating an example of a manufacturing process for the semiconductor package 1, where (a) is a diagram illustrating a state in which the semiconductor package 1 is being molded. (b) is a diagram illustrating a state in which the semiconductor package 1 is cut into individual semiconductor packages 1 after molding. (c) is a diagram illustrating a state in which the lid 70 of the semiconductor package closes the first opening 63 and the second opening 64. FIG. 5 is a diagram illustrating a lower mold die 80 and an upper mold die 90 used in the manufacturing process for the semiconductor package 1.

[0039] 4(a), the light-receiving element 20 is placed on the substrate 10 so that the multiple terminals 11 are arranged around the light-receiving element 20. Then, the connection wires 40 are connected to the light-receiving element 20 and the multiple terminals 11. This electrically connects the light-receiving element 20 and the substrate 10. In this embodiment, the substrate 10, which includes the light-receiving elements 20 and the connection wires 40, is molded in a state where multiple light-receiving elements 20 and the substrate 10 are connected together.

[0040] Next, the substrate 10, together with the light-receiving element 20 and the connecting wires 40, is placed on a lower molding die 80. Next, the resin material of the resin sealing portion 60 described above is molded using an upper molding die 90 and thermally cured, thereby forming the resin sealing portion 60 on the surface 10f of the substrate 10. At this time, the resin sealing portion 60 forms an outer frame wall 61, and the outer frame wall 61 seals the connecting wires 40.

[0041] 4(b), the light emitting element 30 is placed on the light emitting element region 12 on the surface 10f of the substrate 10. Next, the light emitting element wire 50 is connected to the light emitting element 30 and the light emitting element terminal portion 13. This electrically connects the light emitting element 30 and the substrate 10.

[0042] Next, in Fig. 4(b), the cutting portion Q is cut using a dicing blade or the like to form adjacent semiconductor packages 1 into individual semiconductor packages 1. Thereafter, in Fig. 4(c), the formed first opening 63 and second opening 64 are closed from the front surface side D1 with a lid. The semiconductor package 1 is manufactured by the above manufacturing method.

[0043] 4 and 5, the resin sealing portion 60 of the semiconductor package 1 is formed during molding using a lower mold die 80 and an upper mold die 90. In the following description, the resin sealing portion 60 formed by the lower mold die 80 and the upper mold die 90 will be described.

[0044] 5, the mold lower die 80 is formed so that a front surface 80f is parallel to the back surface 10g of the substrate 10. Therefore, the mold lower die 80 can mount the substrate 10 on the front surface 80f.

[0045] The mold upper die 90 has a plurality of steps on the back surface side D2 in the thickness direction D, and includes a first lower surface 91, a second lower surface 92, and a third lower surface 93. The first lower surface 91 is located closer to the front surface D1 than the second lower surface 92 in the thickness direction D. The second lower surface 92 is located closer to the front surface D1 than the third lower surface 93 in the thickness direction D.

[0046] Here, the lower mold die 80 and the upper mold die 90 are formed by connecting a plurality of identical shapes so that a plurality of semiconductor packages 1 can be manufactured by one processing. Here, a first forming portion P of the upper mold die 90 used for one semiconductor package 1 will be described, and a description of the forming portions for the other connected semiconductor packages 1 will be omitted as they are overlapping portions.

[0047] First, the first lower surface 91 is arranged on the outer frame of the substrate 10 during molding, and has approximately the same size and height as the surface 61f of the outer frame wall 61 in the thickness direction D. The first lower surface 91 is located on the surface side D1 of the light-receiving surface 20f of the light-receiving element 20 in the thickness direction D. Therefore, the upper mold die 90 forms a space S1 between the substrate 10 having the light-receiving element 20 and the connection wire 40 and the upper mold die 90. By pouring a resin material into the space S1, the outer frame wall 61 of the resin sealing portion 60 is formed.

[0048] Next, the second lower surface 92 is disposed on the light-receiving surface 20f of the light-receiving element 20 during molding, and is at approximately the same height as the light-receiving surface 20f in the thickness direction D. Therefore, the upper mold die 90 can have a space S2 between the substrate 10 and the upper mold die 90 in which the light-receiving element 20 can be accommodated. Here, since the second lower surface 92 is at approximately the same height as the light-receiving surface 20f of the light-receiving element 20, when the light-receiving element 20 is accommodated in the space S2, the resin material does not flow in during molding. Therefore, after molding, a first opening 63 is formed on the front surface side D1 of the light-receiving element 20.

[0049] The light receiving element 20 can easily take in light because the light receiving portion 21 of the light receiving surface 20f is exposed through the formed first opening 63. Furthermore, the upper mold die 90 has a space S2 on the front surface side D1 that can accommodate the light receiving element 20, thereby preventing the light receiving element 20 from being damaged due to excessive pressure being applied during molding of the light receiving element 20.

[0050] The second lower surface 92 is longer in the long side direction X than the right side surface 23b of the light receiving element 20 to the right side X2 by the width of the central wall 62 of the resin sealing portion 60, forming a space S3. Therefore, the central wall 62 of the resin sealing portion 60 is formed by pouring a resin material into the space S3 formed during molding.

[0051] The third lower surface 93 is formed so that the third lower surface 93 and the surface 10f of the substrate 10 come into contact with each other during molding. At this time, the third lower surface 93 has the same size as the light emitting element region 12. Therefore, the resin material does not flow into the upper mold die 90 during molding, and the second opening 64 is formed. With the above configuration, the resin sealing portion 60 is formed.

[0052] In this embodiment, with the above-described configuration, the outer frame wall 61 of the resin sealing portion 60, which is made of a black resin material with low thermal conductivity and to which a black pigment such as carbon black has been added, is formed on the outer frame of the substrate 10 so as to surround the light receiving element 20 and the light emitting element 30. Therefore, the outer frame wall 61 can suitably absorb light emitted in directions other than the direction set by the light emitting element 30. In addition, it is possible to prevent the light emitted by the light emitting element 30 from becoming noise and affecting the operation of the light receiving element 20.

[0053] Furthermore, by using a resin material with low thermal conductivity for the resin sealing portion 60, it is possible to suppress the heat generated by the light emitting element 30. Therefore, it is possible to suppress the heat generated by the light emitting element 30 from affecting the operation of the light receiving element 20.

[0054] In this embodiment, the outer frame wall 61 of the resin sealing portion 60 seals the connecting wires 40. This prevents the connecting wires 40 from falling over or becoming displaced due to an external impact. Furthermore, by sealing the connecting wires 40, the outer frame wall 61 can improve the reliability of communication.

[0055] In this embodiment, the central wall 62 of the resin sealing portion 60 separates the light receiving element 20 from the light emitting element 30. This prevents light emitted from the light emitting element 30 from entering the light receiving portion of the light receiving element 20. This allows the light receiving element 20 to improve its light receiving accuracy.

[0056] Furthermore, in this embodiment, the first opening 63 of the resin sealing portion 60 is open to the front surface side D1 so that at least the light receiving portion 21 provided on the light receiving surface 20f of the light receiving element 20 is exposed. With this configuration, the light receiving portion 21 can receive light from the outside. Furthermore, the size of the first opening 63 can be set arbitrarily. Therefore, for example, by setting an opening larger than the light receiving portion 21, the first opening 63 can expose the light receiving portion 21 while allowing for misalignment even if the light receiving element 20 is misaligned when it is placed on the substrate 10.

[0057] Furthermore, in this embodiment, the substrate 10 includes the light-emitting element region 12, which allows the light-emitting element 30 to be easily mounted. Therefore, the light-emitting element 30 can be easily attached without being set in a highly accurate position. Furthermore, the first opening 64 of the resin sealing portion 60 is opened so as to expose the light-emitting element region 12 to the front surface side D1. Therefore, the light-emitting element 30 mounted in the light-emitting element region 12 can emit light to the outside.

[0058] In this embodiment, the side surface 23 and the outer edge 22 of the light receiving element 20 are covered with the resin sealing portion 60. Therefore, the light receiving element 20 can be fixed without being displaced, and the strength against external shocks and vibrations can be improved.

[0059] In this embodiment, the resin sealing portion 60 can be easily manufactured by molding using the lower mold die 80 and the upper mold die 90. Furthermore, the semiconductor package 1 can be manufactured with a small number of parts, thereby reducing manufacturing costs.

[0060] Furthermore, in this embodiment, the semiconductor package 1 can be made smaller in size because the light receiving element 20 and the light emitting element 30 can be arranged on the same substrate 10 and can be easily manufactured with a smaller number of parts.

[0061] In this embodiment, the semiconductor package 1 includes the lid 70, which closes the first opening 63 and the second opening 64 from the front surface side D1. This prevents moisture, dust, and other fine particles from entering the light receiving unit 21 and the light emitting element 30 exposed through the first opening 63 and the second opening 64.

[0062] Although one embodiment of the present invention has been described above in detail with reference to the drawings, the specific configuration is not limited to this embodiment and includes design modifications within the scope of the present invention. Furthermore, the components shown in the above-described embodiment and the modified examples shown below can be appropriately combined to form a configuration.

[0063] (Variation) For example, in the above embodiment, the height of the upper surface 62f of the central wall 62 of the resin sealing portion 60 is approximately the same height as the light receiving surface 20f of the light receiving element 20 in the thickness direction D, but the height of the upper surface 62f of the central wall 62 is not particularly limited.

[0064] 6, the resin sealing portion 60A of the semiconductor package 1A may have a central wall 62A such that the height of the upper surface 62Af in the thickness direction D is higher toward the front surface D1 than the light-receiving surface 20f of the light-receiving element 20. In this case, the first opening 63 and the second opening 64 of the resin sealing portion 60A are independent from each other. This further prevents light emitted from the light-emitting element 30 from entering the light-receiving portion of the light-receiving element 20.

[0065] Furthermore, the semiconductor package of the present invention may include a light receiving element 20 of a different size. For example, as shown in Fig. 7, the semiconductor package 1 includes a light receiving element 20A of a different size from that of the present embodiment. Even in this case, the semiconductor package of the present invention can easily form the outer frame wall 61 and the central wall 62 of the resin sealing portion 60 simply by adjusting the size of the first opening 63.

[0066] Furthermore, in the semiconductor package of the present invention, a light-transmitting resin with a low impurity content may be filled into the first opening and the second opening of the resin sealing portion 60. This can further improve the structural strength of the semiconductor package.

[0067] In any of the above-described embodiments, the semiconductor package of the present invention can be easily manufactured while improving the reliability of optical transmission and reception. [Industrial Applicability]

[0068] The semiconductor package according to the present invention can be easily manufactured while improving the reliability of optical transmission and reception, and is therefore industrially applicable. [Explanation of symbols]

[0069] 1. 1A semiconductor package 10 Substrate (substrate) 10f (of substrate 10) surface 12 Light-emitting element area 20, 20A light receiving element 20f light receiving surface 21 Light receiving section 22 outer edge 23 Side 30 Light-emitting element 40 Connecting Wires (Wires) 50 Light-emitting element wire 60 Resin sealing part 61 Outer Frame Wall 62, 62a Central wall (wall section) 62f top surface 63 First opening 64 Second opening 70 Lid 80 Lower mold 90 Upper mold D Thickness direction

Claims

1. a sheet-like substrate; a light-receiving element provided on a surface of the substrate and having a light-receiving portion on the surface side; a light-emitting element provided in a light-emitting element region on the surface of the base; a wire connecting the base and the light receiving element; a resin sealing portion formed of resin on the surface of the base and sealing at least the wire; A semiconductor package comprising: The resin sealing portion is a first opening that is opened so that the light receiving portion of the light receiving element is exposed to the front surface side; a second opening portion that opens to the front surface side so as to expose the light emitting element region and allows the light emitting element to be placed in the light emitting element region; a wall portion that stands between the first opening and the second opening and has a side surface that abuts against a side surface of the light receiving element; Equipped with The height of the upper surface of the wall portion is approximately the same as the height of the light receiving surface of the light receiving element in the thickness direction of the base body. Semiconductor package.

2. The side surface and the outer edge of the surface of the light receiving element are covered with the resin sealing portion. The semiconductor package of claim 1 .

3. The resin sealing portion is formed of a resin material having a light-shielding property.

3. The semiconductor package according to claim 1.

4. The resin sealing portion is made of a black resin material.

3. The semiconductor package according to claim 1.

5. The semiconductor package further includes a plate-shaped lid that closes the first opening and the second opening that are open on the surface. The semiconductor package according to claim 1 .

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