Light-emitting diode manufacturing method

Abstract

To provide a method of manufacturing a packaging structure of a light-emitting diode.SOLUTION: The present invention relates to a method of manufacturing a packaging structure of a light-emitting diode that includes: an arrangement step of providing a substrate with the light-emitting diode and a dummy plug; a coating step of coating the substrate with a patternable material and covering the light-emitting diode and the dummy plug; a patterning step of patterning the patternable material; a deposition step of forming a conductive layer on one surface of the patternable material and bringing the conductive layer into contact with the light-emitting diode and the dummy plug for electrical connection; a protective layer forming step of forming a protective layer on one surface of the conductive layer; and a peeling step of forming the packaging structure of the light-emitting diode. The material of the conductive layer includes an indium tin oxide material or a transparent conductive material. Consequently, the process efficiency and yield can be improved and the costs can be reduced.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a package structure for a light emitting diode, and more particularly to a package structure for a light emitting diode and a manufacturing method thereof that can improve process efficiency and yield and reduce costs. [Background technology]

[0002] In a conventional method for manufacturing a LED package structure, the LED and a dummy plug are fixed to a substrate, and then wire bonding is performed to electrically connect the LED and the dummy plug to form a colloidal package. However, the manufacturing process is complicated, which affects process efficiency and yield, and the substrate cannot be reused, significantly increasing manufacturing costs.

[0003] In view of this, how to improve the packaging efficiency and yield of light emitting diodes and reduce costs remains a goal that related industries are striving for. Summary of the Invention

[0004] a deposition step of forming a conductive layer on a surface of the patternable material away from the substrate, the conductive layer contacting and electrically connecting the exposed portion of the at least one light-emitting diode and the exposed portion of the at least one dummy plug; a protective layer formation step of forming a protective layer on a surface of the conductive layer away from the substrate; and a peeling step of separating the substrate from the patternable material, the at least one light-emitting diode, and the at least one dummy plug to form a light-emitting diode package structure, wherein the conductive layer is made of an indium tin oxide material or a transparent conductive material.

[0005] According to the manufacturing method of the light emitting diode package structure mentioned above, in the deposition step, the conductive layer may be formed on the patternable material by sputtering at room temperature.

[0006] According to the manufacturing method of the package structure of the light emitting diode mentioned above, the indium tin oxide material may include an indium tin oxide component and a transition metal component.

[0007] According to the manufacturing method of the above-mentioned LED package structure, the conductive layer may have at least three film layers each made of an indium tin oxide component or a transition metal component, and the film layers made of an indium tin oxide component and the film layers made of a transition metal component may be stacked alternately.

[0008] According to the manufacturing method of the LED package structure described above, the film layer closest to the substrate and the film layer furthest from the substrate of the conductive layer may both be film layers made of indium tin oxide components.

[0009] According to the manufacturing method of the above-mentioned LED package structure, the thickness of each film layer made of indium tin oxide component may be 20 nm to 100 nm, and the thickness of each film layer made of transition metal component may be 1 nm to 10 nm.

[0010] According to the manufacturing method of the above-mentioned light-emitting diode packaging structure, the thickness of the conductive layer may be 50 nm to 200 nm.

[0011] According to the manufacturing method of the above-mentioned light-emitting diode package structure, the surface of the substrate may have a peelable layer, and the peelable layer may be located between the substrate and the at least one light-emitting diode, the at least one dummy plug, and the patternable material, and in the peeling process, the substrate is irradiated with ultraviolet light to separate the peelable layer from the at least one light-emitting diode, the at least one dummy plug, and the patternable material.

[0012] Another aspect of the present invention provides a light-emitting diode package structure manufactured by the above-mentioned method for manufacturing a light-emitting diode package structure.

[0013] Another aspect of the present invention is a method for manufacturing a semiconductor device comprising: a patternable material layer having an upper surface and a lower surface; at least one light emitting diode embedded in the patternable material layer and having a first surface exposed from the lower surface of the patternable material layer; at least one dummy plug embedded in the patternable material layer and having a third surface exposed from the lower surface of the patternable material layer; a conductive layer covering the upper surface of the patternable material layer and in contact with and electrically connected to the at least one light emitting diode and the at least one dummy plug; and a protective layer covering the conductive layer, wherein the patternable material layer comprises at least two The package structure for a light-emitting diode includes a through hole, at least one light-emitting diode has a second surface opposite the first surface, and at least one dummy plug has a fourth surface opposite the third surface, the through hole extending from an upper surface of the patternable material layer to the second surface of the at least one light-emitting diode and the fourth surface of the at least one dummy plug, and a conductive layer contacts the second surface of the at least one light-emitting diode and the fourth surface of the at least one dummy plug through the through hole, and the material of the conductive layer includes an indium tin oxide material or a transparent conductive material. [Brief explanation of the drawings]

[0014] [Figure 1] 3 is a process flow chart of a method for manufacturing a light emitting diode package structure according to an embodiment of the present invention. [Figure 2A] FIG. 2 is a structural schematic diagram of step 110 in FIG. [Figure 2B] FIG. 2 is a structural schematic diagram of step 120 in FIG. 1. [Figure 2C] FIG. 2 is a structural schematic diagram of step 130 in FIG. 1. [Figure 2D] FIG. 2 is a structural schematic diagram of step 140 in FIG. 1. [Figure 2E] FIG. 2 is a structural schematic diagram of step 150 in FIG. 1. [Figure 2F] FIG. 2 is a structural schematic diagram of step 160 in FIG. 1. [Figure 2G] FIG. 2 is a structural schematic diagram of step 170 in FIG. 1. [Figure 2H]2 is a structural schematic diagram of a finished product obtained by the manufacturing method of the light-emitting diode package structure of FIG. 1. [Figure 3A] 1 is a top view schematically showing a package structure of a light-emitting diode according to an embodiment of the present invention; [Figure 3B] 3B is a bottom view schematically showing the package structure of the light-emitting diode of FIG. 3A. FIG. [Figure 3C] 3C is a cross-sectional view schematically showing the package structure of the light-emitting diode taken along line 3C-3C in FIG. 3A. [Figure 4] FIG. 10 is a graph showing the relationship between the sheet resistance and the thickness of the conductive layer in the first example, the second example, the first comparative example, and the second comparative example. [Figure 5] FIG. 10 is a graph showing the relationship between transmittance and thickness of a conductive layer in the first example, the second example, the first comparative example, and the second comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0015] Each embodiment of the present invention will be described in more detail below. However, the embodiments may be applications of various inventive concepts and may be specifically implemented within various specific scopes. The specific embodiments are for illustrative purposes only and are not intended to be limiting in scope.

[0016] Please refer to Figure 1. Figure 1 is a process flowchart of a method 100 for manufacturing a light-emitting diode packaging structure according to one embodiment of the present invention. The method 100 for manufacturing a light-emitting diode packaging structure includes steps 110, 120, 130, 140, 150, 160, and 170.

[0017] Please refer to Figure 2A, which is a structural schematic diagram of step 110 in Figure 1. In step 110, a substrate 210 is provided, which may be a glass substrate and may have a peelable layer 211 on its surface, which can separate the substrate 210 from a later-formed LED package structure. The detailed manufacturing process will be described in the following paragraphs and will not be repeated here.

[0018] Please refer to Figure 2B, which is a structural schematic diagram of step 120 in Figure 1. Step 120 is a disposing step of providing at least one light emitting diode 220 and at least one dummy plug 230 on the surface of the substrate 210.

[0019] Please refer to Figure 2C, which is a structural schematic diagram of step 130 in Figure 1. Step 130 is a coating step of coating a patternable material 240 on the surface of a substrate 210, and covering the light-emitting diode 220 and the dummy plug 230 with the patternable material 240. In addition, the aforementioned peelable layer 211 may be located between the substrate 210 and the light-emitting diode 220, the dummy plug 230, and the patternable material 240.

[0020] Please refer to Figure 2D. Figure 2D is a structural schematic diagram of step 140 in Figure 1. Step 140 is a patterning step in which the patternable material 240 is patterned to expose a part of the light-emitting diode 220 and a part of the dummy plug 230 from the patternable material 240. Specifically, after placing a photomask M above the patternable material 240, the patternable material 240 may be etched, and thus the patternable material 240 not blocked by the photomask M is removed, thereby exposing the light-emitting diode 220 and the dummy plug 230.

[0021] Specifically, the patternable material 240 may include a photoresist or an adhesive. If the patternable material 240 includes a photoresist, the photoresist can be irradiated with ultraviolet light or an electron beam to locally unharden, thereby exposing the light-emitting diode 220 and the dummy plug 230 by removing the unhardened photoresist. If the patternable material 240 includes an adhesive, the adhesive can be laser-etched. Because the top electrodes of the light-emitting diode 220 and the dummy plug 230 are made of metal and the laser has high selectivity to the metal and the adhesive, the adhesive can be effectively removed, and the use of laser etching also helps reduce manufacturing costs.

[0022] Please refer to Figure 2E, which is a structural schematic diagram of step 150 in Figure 1. Step 150 is a deposition step that forms a conductive layer 250 on the surface of patternable material 240 away from substrate 210 and contacts and electrically connects conductive layer 250 to the exposed portions of light-emitting diode 220 and dummy plug 230.

[0023] Specifically, the material of the conductive layer 250 may include an indium tin oxide (ITO) material or a transparent conductive material, and the ITO material may include an ITO component and a transition metal component. The conductive layer 250 may have at least three film layers (not shown), each of which may be made of an ITO component or a transition metal component. The ITO film layers and the transition metal film layers may be alternately stacked, and the film layers of the conductive layer 250 closest to the substrate 210 and the film layers furthest from the substrate 210 may both be made of an ITO component. Using the above materials allows the conductive layer 250 to be formed on the patternable material 240 by sputtering at room temperature, and after the conductive layer 250 is formed, annealing is not required, thereby meeting the requirement for low sheet resistance. The transition metal component in the present invention may be a transition metal element or a post-transition metal element, particularly a low-melting transition metal element or a post-transition metal element, and may be selected from the group consisting of tin, indium, gallium, aluminum, zinc, and silver, although the present invention is not limited to the above types of materials.

[0024] The thickness of each film layer made of an indium tin oxide component is 20 nm to 100 nm, and the thickness of each film layer made of a transition metal component is 1 nm to 10 nm. Alternatively, the thickness of the conductive layer 250 may be 50 nm to 200 nm. This provides an appropriate thickness for the conductive layer 250, providing good conductivity, shortening the process time, and having a moderate transmittance.

[0025] Please refer to Figure 2F, which is a structural schematic diagram of step 160 in Figure 1. Step 160 is a protective layer formation step in which a protective layer 260 is formed on the surface of the conductive layer 250 on the side away from the substrate 210.

[0026] Please refer to Figures 2G and 2H. Figure 2G is a structural schematic diagram of step 170 in Figure 1, and Figure 2H is a structural schematic diagram of a finished product obtained by the manufacturing method 100 for a light-emitting diode package structure in Figure 1. Step 170 is a peeling process in which the substrate 210 is separated from the patternable material 240, the light-emitting diode 220, and the dummy plug 230 to form a light-emitting diode package structure 300. In the peeling process, the substrate 210 is irradiated with light, heated, or cooled to separate the peelable layer 211 from the light-emitting diode 220, the dummy plug 230, and the patternable material 240. In this process, for example, ultraviolet light L is irradiated onto the substrate 210. The substrate 210 can also be separated from other elements by other methods such as heating or mechanical methods, and the present invention is not limited to the above peeling method.

[0027] Another aspect of the present invention provides a light-emitting diode packaging structure 300 manufactured by the method 100 for manufacturing a light-emitting diode packaging structure described above.

[0028] Please refer to Figures 3A to 3C. Figure 3A is a top view schematically showing a light-emitting diode packaging structure 400 according to one embodiment of the present invention, Figure 3B is a bottom view schematically showing the light-emitting diode packaging structure 400 of Figure 3A, and Figure 3C is a cross-sectional view schematically showing the light-emitting diode packaging structure 400 of Figure 3A along line 3C-3C. The light-emitting diode packaging structure 400 includes a patternable material layer 410, at least one light-emitting diode 420, at least one dummy plug 430, a conductive layer 440, and a protective layer 450, which have the same properties as the patternable material 240, the light-emitting diode 220, the dummy plug 230, the conductive layer 250, and the protective layer 260 described above, respectively, and therefore will not be described here.

[0029] The patternable material layer 410 includes an upper surface 411 and a lower surface 412. The light emitting diode 420 and the dummy plug 430 are embedded in the patternable material layer 410, and a first surface 421 of the light emitting diode 420 and a third surface 431 of the dummy plug 430 are exposed from the lower surface 412 of the patternable material layer 410, respectively, and the first surface 421 and the third surface 431 may be used for current transmission.

[0030] The conductive layer 440 covers the top surface 411 of the patternable material layer 410, and the conductive layer 440 contacts and is electrically connected to the light-emitting diode 420 and the dummy plug 430, and the protective layer 450 covers the conductive layer 440. Specifically, the patternable material layer 410 includes at least two through holes 413, the light-emitting diode 420 has a second surface 422 opposite the first surface 421, and the dummy plug 430 has a fourth surface 432 opposite the third surface 431, the through holes 413 extend from the top surface 411 of the patternable material layer 410 to the second surface 422 of the light-emitting diode 420 and the fourth surface 432 of the dummy plug 430, and the conductive layer 440 contacts the second surface 422 of the light-emitting diode 420 and the fourth surface 432 of the dummy plug 430 through the through holes 413.

[0031] The following specific examples further illustrate the present invention, helping those skilled in the art to fully utilize and practice the present invention without the need for undue interpretation. These examples are used to explain how to carry out the materials and methods of the present invention, but should not be construed as limiting the scope of the present invention.

[0032] The first example, the second example, the first comparative example, and the second comparative example disclose the electrical and optical properties of conductive layers with different structures. The configurations of the conductive layers according to the above examples and comparative examples are shown in Table 1 below. TIFF0007762446000001.tif63115

[0033] The film layers 1 to 5 in Table 1 are arranged in order from the film layer closest to the substrate to the film layer farthest from the substrate. The measurement results of the sheet resistance and transmittance of the above examples and comparative examples are shown in Table 2 below. TIFF0007762446000002.tif39114

[0034] Please also refer to FIGS. 4 and 5. FIG. 4 is a graph showing the relationship between sheet resistance and conductive layer thickness for the first example, the second example, the first comparative example, and the second comparative example. FIG. 5 is a graph showing the relationship between transmittance and conductive layer thickness for the first example, the second example, the first comparative example, and the second comparative example. As can be seen from the experimental results, the sheet resistance of the first example and the second example is significantly lower than that of the first comparative example and the second comparative example, which indicates that the conductive layer structure and the related manufacturing method used in the present invention can significantly improve conductivity. In addition, the transmittance of the first example is significantly higher than that of the first comparative example and the second comparative example. Although the transmittance of the second example is lower, it is still comparable to that of the second comparative example and exceeds 70%, which indicates that the conductive layer structure and the related manufacturing method used in the present invention can provide good transmittance.

[0035] As described above, the present invention deposits a conductive layer on the LED and the dummy plug, allowing circuits to be arranged without wire bonding, thereby improving process efficiency and yield.Furthermore, the present invention manufactures the LED package structure by substrate peeling, allowing the substrate to be reused, thereby reducing costs and leading to the miniaturization of the LED package structure.

[0036] The present invention has been disclosed above based on the examples, but the examples do not limit the present invention, and a person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is based on that defined in the appended claims. [Explanation of symbols]

[0037] 100 Manufacturing method of light emitting diode package structure 110, 120, 130, 140, 150, 160, 170 processes 210 Substrate 211 Peelable Layer 220, 420 light-emitting diodes 230, 430 dummy plug 240 Patternable Materials 250, 440 conductive layer 260, 450 protective layer 300, 400 Light-emitting diode package structure 410 Patternable Material Layer 411 Top surface 412 Bottom surface 413 Through hole 421 First Surface 422 Second Surface 431 Third Surface 432 The Fourth Surface M Photomask L ultraviolet light

Claims

1. providing a substrate; a disposing step of providing at least one light emitting diode and at least one dummy plug on a surface of the substrate; a coating step of coating a patternable material onto the surface of the substrate and covering the at least one light emitting diode and the at least one dummy plug with the patternable material; a patterning step of patterning the patternable material to expose a portion of the at least one light emitting diode and a portion of the at least one dummy plug from the patternable material; a depositing step of forming a conductive layer on a surface of the patternable material away from the substrate and contacting and electrically connecting the conductive layer to an exposed portion of the at least one light emitting diode and an exposed portion of the at least one dummy plug; a protective layer forming step of forming a protective layer on one surface of the conductive layer away from the substrate; a peeling step of separating the substrate from the patternable material, the at least one light emitting diode, and the at least one dummy plug to form a light emitting diode package structure; Including, The conductive layer material comprises an indium tin oxide material or a transparent conductive material.

2. 2. The method for manufacturing a light-emitting diode package structure as claimed in claim 1, wherein in the depositing step, the conductive layer is formed on the patternable material by sputtering at room temperature.

3. 2. The method for manufacturing a light-emitting diode package structure as claimed in claim 1, wherein the indium tin oxide material comprises an indium tin oxide component and a transition metal component.

4. 4. The method for manufacturing a light-emitting diode package structure according to claim 3, wherein the conductive layer has at least three film layers each made of the indium tin oxide component or the transition metal component, and the film layers made of the indium tin oxide component and the film layers made of the transition metal component are alternately stacked.

5. 5. The method for manufacturing a light-emitting diode package structure as claimed in claim 4, wherein the layer of the conductive layer closest to the substrate and the layer of the conductive layer furthest from the substrate are both made of the indium tin oxide component.

6. 5. The method for manufacturing a light-emitting diode package structure according to claim 4, wherein the thickness of each of the film layers made of the indium tin oxide component is 20 nm to 100 nm, and the thickness of each of the film layers made of the transition metal component is 1 nm to 10 nm.

7. 2. The method for manufacturing a light emitting diode package structure as claimed in claim 1, wherein the thickness of the conductive layer is 50 nm to 200 nm.

8. 2. The method for manufacturing a light-emitting diode package structure according to claim 1, wherein the surface of the substrate has a peelable layer located between the substrate and the at least one light-emitting diode, the at least one dummy plug, and the patternable material, and in the peeling process, the substrate is irradiated with light, heated, or cooled to separate the peelable layer from the at least one light-emitting diode, the at least one dummy plug, and the patternable material.

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