Light-emitting device manufacturing method and light-emitting device
The integration of lens formation and substrate cutting steps in the manufacturing process addresses the productivity challenge of lens bonding in deep ultraviolet light-emitting elements, enhancing efficiency and stability in the production of light-emitting elements.
JP7765545B1Active Publication Date: 2025-11-06NIKKISO CO LTD
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Patent Information
- Application Number
- JP2024078822
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2024-05-14
- Publication Date
- 2025-11-06
- Estimated Expiration
- 2044-05-14
AI Technical Summary
Technical Problem
The bonding of lenses to each deep ultraviolet light-emitting element in existing technologies complicates the manufacturing process, hindering productivity improvements.
Method used
A method for manufacturing a light-emitting element involving a semiconductor formation step, electrode formation step, lens formation step, and a singulation step that cuts the substrate to form a flat portion and lens portions, allowing for the direct integration of lenses into the element structure without separate bonding.
Benefits of technology
This approach enhances productivity by eliminating the need for separate lens bonding and stabilizes the cutting process, improving the manufacturing efficiency of light-emitting elements.
✦ Generated by Eureka AI based on patent content.
Abstract
A method for manufacturing a light-emitting element that allows for improved productivity, and a light-emitting element are provided. [Solution] A method for manufacturing a light-emitting device includes a semiconductor formation step of forming an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 on a first main surface 201 of a substrate; an electrode formation step of forming an n-side electrode 6 on the surface of the n-type semiconductor layer 3 and a p-side electrode 7 on the surface of the p-type semiconductor layer 5; a lens formation step of cutting the substrate from a second main surface opposite the first main surface 201 to form a flat portion 211 and a plurality of lens portions 212 protruding from the flat portion 211; and a singulation step, which is performed after the semiconductor formation step, electrode formation step, and lens formation step, of cutting an element structure 10 including a substrate 200, an n-type semiconductor layer 3, an active layer 4, a p-type semiconductor layer 5, an n-side electrode 6, and a p-side electrode 7 at the position of the flat portion 211 to singulate the element structure into a plurality of light-emitting devices each including a lens portion 212.
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