Memory device

Abstract

A highly reliable storage device is provided. A storage device comprising a memory control unit, which has an input / output unit, a control unit, and a first management unit, and a plurality of memory blocks, wherein: the first management unit has a plurality of first storage elements; the control unit has a function for converting an address input via the input / output unit into a corresponding memory block address using a first management table stored in the plurality of first storage elements; and the first storage elements include a ferroelectric material. The control unit may have a function for avoiding the use of defective memory cells, and may have a function for correcting read data errors.

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device.

[0002] In this specification, a semiconductor device is a device that utilizes semiconductor characteristics, and refers to a circuit including a semiconductor element (transistor, diode, photodiode, etc.), or a device having such a circuit. It also refers to any device that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip including an integrated circuit, or an electronic component in which a chip is housed in a package are examples of semiconductor devices. Other examples of semiconductor devices include memory devices, display devices, light-emitting devices, lighting devices, and electronic devices. Therefore, a semiconductor device may have a semiconductor device as a part thereof.

[0003] Note that one aspect of the present invention is not limited to the above technical fields. One aspect of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Another aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter.

[0004] Therefore, examples of technical fields related to one embodiment of the present invention include display devices, light-emitting devices, power storage devices, imaging devices, memory devices, signal processing devices, processors, electronic devices, systems, driving methods thereof, manufacturing methods thereof, or testing methods thereof. [Background technology]

[0005] In recent years, the amount of data handled by electronic devices has increased, leading to a demand for increased storage capacity in memory devices. Methods for increasing the storage capacity of memory devices include, for example, adopting a structure in which multiple memory cell arrays are stacked (three-dimensional structure) and making memory cells multi-valued.

[0006] Furthermore, NAND flash memory has become popular as a storage device with a large storage capacity. In recent years, a technology for increasing the integration density of NAND flash memory by arranging memory cells three-dimensionally has become widespread (Patent Document 1).

[0007] Furthermore, as shown in Non-Patent Document 1, research and development of memory arrays using ferroelectrics is being actively carried out. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-266143 [Non-patent literature]

[0009] [Non-Patent Document 1] TSBoescke,et al,“Ferroelectricity in hafnium oxide thin films”,APL99,2011 Summary of the Invention [Problem to be solved by the invention]

[0010] When the number of memory cells (memory elements) is increased in order to increase the storage capacity of a storage device, the number of defective memory cells may also increase. Also, when memory cells are made multi-valued for the same purpose, the range of potentials that represent information becomes narrower, and the data written and the data read may differ due to variations in the electrical characteristics of the elements.

[0011] In preparation for the case where the number of defective memory cells increases, a system configuration is required that manages the defective memory cells and performs ECC processing (ECC: Error Check and Correct, error detection and correction).

[0012] An object of one embodiment of the present invention is to provide a novel memory device.An object of one embodiment of the present invention is to provide a highly reliable memory device.An object of one embodiment of the present invention is to provide a memory device with low power consumption.An object of one embodiment of the present invention is to provide a memory device with a large storage capacity.An object of one embodiment of the present invention is to provide a novel semiconductor device.An object of one embodiment of the present invention is to provide a highly reliable semiconductor device.An object of one embodiment of the present invention is to provide a semiconductor device with low power consumption.An object of one embodiment of the present invention is to provide a semiconductor device with a large storage capacity.

[0013] The problems of one embodiment of the present invention are not limited to the problems listed above. The problems listed above do not preclude the existence of other problems. Problems not mentioned in this section can be derived by a person skilled in the art from the description in the specification or drawings, and can be appropriately extracted from these descriptions. One embodiment of the present invention solves at least one of the problems listed above and other problems. One embodiment of the present invention does not necessarily solve all of the problems listed above and other problems. [Means for solving the problem]

[0014] One aspect of the present invention is a storage device having a memory control unit having an input / output unit, a control unit, and a first management unit, and a memory unit having a plurality of memory blocks, wherein the first management unit has a plurality of first memory elements, and the control unit has the function of converting an address input via the input / output unit into an address of a memory block corresponding to the address using a first management table stored in the plurality of first memory elements, and each of the plurality of first memory elements is a storage device including a ferroelectric.

[0015] The memory control unit may have a second management unit. The second management unit has a plurality of second memory elements. The control unit may have a function of selecting a memory block to which data can be written from the plurality of memory blocks using a second management table stored in the plurality of second memory elements. Each of the plurality of second memory elements may include a ferroelectric material.

[0016] The memory control unit may have a third management unit. The third management unit has a plurality of third storage elements. The control unit may have a function of determining whether error correction is necessary when reading data, using a third management table stored in the plurality of third storage elements. Each of the plurality of third storage elements may include a ferroelectric material.

[0017] Each of the memory blocks has a plurality of memory elements. The memory elements may be NAND-type memory elements. The ferroelectric preferably contains one or both of hafnium and zirconium. The hydrogen concentration in the ferroelectric is 5×10 20 atoms / cm 3 The carbon concentration in the ferroelectric is preferably 5×10 19 atoms / cm 3 The following is preferred: [Effects of the Invention]

[0018] According to one embodiment of the present invention, a novel memory device can be provided. According to one embodiment of the present invention, it is an object to provide a highly reliable memory device. According to one embodiment of the present invention, it is possible to provide a memory device with low power consumption. According to one embodiment of the present invention, it is possible to provide a memory device with large storage capacity. According to one embodiment of the present invention, it is an object to provide a novel semiconductor device. According to one embodiment of the present invention, it is possible to provide a highly reliable semiconductor device. According to one embodiment of the present invention, it is possible to provide a semiconductor device with low power consumption. According to one embodiment of the present invention, it is possible to provide a semiconductor device with large storage capacity.

[0019] Note that the description of these effects does not preclude the existence of other effects. Furthermore, one embodiment of the present invention does not necessarily have all of these effects. Furthermore, effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0020] FIG. 1 is a block diagram showing an example of the configuration of a storage device. FIG. 2 is a diagram illustrating an example of a circuit configuration of a memory string. FIG. 3 is a diagram illustrating the logical address conversion table. FIG. 4 is a diagram illustrating the free block management table. FIG. 5 is a diagram illustrating the ECC management table. Fig. 6A is a diagram illustrating an example of a circuit configuration of a memory cell, Fig. 6B is a graph showing an example of a hysteresis characteristic, and Fig. 6C is a timing chart showing an example of a method for driving a memory cell. 7A to 7E are diagrams illustrating examples of the circuit configuration of a memory cell. FIG. 8 is a flowchart illustrating an example of the operation of the storage device. FIG. 9 is a flowchart illustrating an example of the operation of the storage device. FIG. 10 is a flowchart illustrating an example of the operation of the storage device. 11A and 11B are flowcharts illustrating an example of the operation of the storage device. FIG. 12 is a flowchart illustrating an example of the operation of the storage device. 13A to 13E are diagrams illustrating an example of a storage device. FIG. 14 is a block diagram illustrating an example of the configuration of an information processing system. 15A to 15G are diagrams illustrating an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0021] Furthermore, when it is stated in this specification that X and Y are connected, it is understood that the following cases are disclosed in this specification: when X and Y are electrically connected, when X and Y are functionally connected, and when X and Y are directly connected. Therefore, it is not limited to a predetermined connection relationship, for example, a connection relationship shown in a figure or text, and it is understood that connections other than those shown in a figure or text are also disclosed in a figure or text. X and Y are understood to be objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0022] As an example of a case where X and Y are electrically connected, one or more elements (e.g., switches, transistors, capacitance elements, inductors, resistance elements, diodes, display devices, light-emitting devices, loads, etc.) that enable the electrical connection between X and Y can be connected between X and Y. The on and off states of the switches are controlled. In other words, the switches have the function of being in a conductive state (on state) or a non-conductive state (off state), and controlling whether or not a current flows.

[0023] As an example of a case where X and Y are functionally connected, one or more circuits that enable the functional connection between X and Y (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (digital-analog conversion circuits, analog-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boost circuits, step-down circuits, etc.), level shifter circuits that change the potential level of signals, etc.), voltage sources, current sources, switching circuits, amplifier circuits (circuits that can increase the signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y. As an example, even if another circuit is sandwiched between X and Y, X and Y are considered to be functionally connected if a signal output from X is transmitted to Y.

[0024] When it is explicitly stated that X and Y are electrically connected, this includes the case where X and Y are electrically connected (i.e., the case where X and Y are connected with another element or circuit between them) and the case where X and Y are directly connected (i.e., the case where X and Y are connected without another element or circuit between them).

[0025] Furthermore, for example, it can be expressed as follows: "X, Y, and the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y." Or, it can be expressed as follows: "The source (or first terminal, etc.) of the transistor is electrically connected to X, and the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as follows: "X is electrically connected to Y via the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are provided in this connection order." By using expressions similar to these examples to define the order of connections in a circuit configuration, the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor can be distinguished and the technical scope can be determined. Note that these expressions are merely examples and are not limiting. Here, X and Y are assumed to be objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0026] Note that even when independent components are shown electrically connected in a circuit diagram, one component may have the functions of multiple components. For example, if part of a wiring also functions as an electrode, one conductive film has the functions of both a wiring and an electrode. Therefore, in this specification, the term "electrically connected" also includes such cases where one conductive film has the functions of multiple components.

[0027] Furthermore, in this specification, etc., a "resistance element" can be, for example, a circuit element, wiring, etc. having a resistance value higher than 0Ω. Therefore, in this specification, etc., a "resistance element" is intended to include wiring having a resistance value, a transistor in which a current flows between the source and drain, a diode, a coil, etc. Therefore, the term "resistance element" can be replaced with terms such as "resistance," "load," or "region having a resistance value," and conversely, the terms "resistance," "load," or "region having a resistance value" can be replaced with terms such as "resistance element." The resistance value can be, for example, preferably 1 mΩ or more and 10 Ω or less, more preferably 5 mΩ or more and 5 Ω or less, and even more preferably 10 mΩ or more and 1 Ω or less. Furthermore, for example, a resistance value of 1 Ω or more and 1×10 9 It may be set to Ω or less.

[0028] Furthermore, in this specification, the term "capacitive element" can refer to, for example, a circuit element having a capacitance value greater than 0 F, a region of wiring having a capacitance value greater than 0 F, parasitic capacitance, or the gate capacitance of a transistor. Therefore, in this specification, the term "capacitive element" includes not only a circuit element including a pair of electrodes and a dielectric between the electrodes, but also parasitic capacitance occurring between wiring and one of the source or drain of a transistor and the gate, and the like. Furthermore, terms such as "capacitive element," "parasitic capacitance," and "gate capacitance" can be replaced with terms such as "capacitance," and conversely, the term "capacitance" can be replaced with terms such as "capacitive element," "parasitic capacitance," and "gate capacitance." Furthermore, the term "pair of electrodes" in "capacitance" can be replaced with "pair of conductors," "pair of conductive regions," or "pair of regions." The capacitance value can be, for example, 0.05 fF or more and 10 pF or less. It can also be, for example, 1 pF or more and 10 μF or less.

[0029] Furthermore, in this specification, a transistor has at least three terminals called a gate, a source, and a drain. The gate is a control terminal that controls the conduction state of the transistor. The two terminals that function as a source or a drain are the input / output terminals of the transistor. One of the two input / output terminals becomes a source and the other becomes a drain depending on the conductivity type of the transistor (n-channel type, p-channel type) and the level of the potential applied to the three terminals of the transistor. For this reason, in this specification, the terms source and drain can be interchanged. Furthermore, in this specification, when describing the connection relationship of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used.

[0030] Depending on the structure of the transistor, a back gate may be provided in addition to the three terminals described above. In this case, in this specification, one of the gate or the back gate of the transistor may be referred to as the first gate, and the other may be referred to as the second gate. Furthermore, for the same transistor, the terms "gate" and "back gate" may be interchangeable. Furthermore, when a transistor has three or more gates, in this specification, the respective gates may be referred to as the first gate, the second gate, the third gate, etc.

[0031] Furthermore, in this specification and the like, the term "node" can be rephrased as a terminal, wiring, electrode, conductive layer, conductor, impurity region, etc., depending on the circuit configuration, device structure, etc. Furthermore, the term "node" can be rephrased as a terminal, wiring, etc.

[0032] Furthermore, in this specification and the like, the terms "voltage" and "potential" can be interchanged as appropriate. "Voltage" refers to the potential difference from a reference potential. For example, if the reference potential is the ground potential (earth potential), then "voltage" can be interchanged with "potential." Note that ground potential does not necessarily mean 0 V. Furthermore, potential is relative, and as the reference potential changes, the potential applied to wiring, the potential applied to a circuit, etc., the potential output from a circuit, etc. also changes.

[0033] Furthermore, in this specification and the like, the terms "high-level potential (also referred to as "high-level potential," "H potential," or "H")" and "low-level potential (also referred to as "low-level potential," "L potential," or "L")" do not refer to specific potentials. For example, when two wirings are both described as "functioning as wirings that supply high-level potentials," the high-level potentials provided by both wirings do not have to be equal to each other. Similarly, when two wirings are both described as "functioning as wirings that supply low-level potentials," the low-level potentials provided by both wirings do not have to be equal to each other.

[0034] "Current" refers to the phenomenon of charge transfer (electrical conduction). For example, a statement that "electrical conduction of a positively charged body is occurring" can be rephrased as "electrical conduction of a negatively charged body is occurring in the opposite direction." Therefore, in this specification, unless otherwise specified, "current" refers to the phenomenon of charge transfer (electrical conduction) associated with the movement of carriers. The carriers referred to here include electrons, holes, anions, cations, complex ions, etc., and the carriers differ depending on the system through which the current flows (e.g., semiconductor, metal, electrolyte, vacuum, etc.). Furthermore, the "direction of current" in wiring, etc., refers to the direction in which positive carriers move and is expressed as a positive current amount. In other words, the direction in which negative carriers move is opposite to the direction of current and is expressed as a negative current amount. Therefore, in this specification, etc., unless otherwise specified regarding the positive / negative sign of the current (or the direction of current), a statement such as "current flows from element A to element B" can be rephrased as "current flows from element B to element A," etc. Furthermore, statements such as "current is input to element A" can be rephrased as "current is output from element A" or the like.

[0035] Furthermore, in this specification, the ordinal numbers "first," "second," and "third" are used to avoid confusion between components. Therefore, they do not limit the number of components. Furthermore, they do not limit the order of the components. For example, a component referred to as "first" in one embodiment of this specification may be a component referred to as "second" in another embodiment, in the claims, etc. Furthermore, for example, a component referred to as "first" in one embodiment of this specification, etc. may be omitted in another embodiment, in the claims, etc.

[0036] Furthermore, in this specification, terms indicating position, such as "above" and "below," may be used for convenience in describing the positional relationship between components with reference to the drawings. Furthermore, the positional relationship between components changes as appropriate depending on the direction in which each component is depicted. Therefore, the terms are not limited to those used in the specification, and can be rephrased appropriately depending on the situation. For example, the expression "insulator located on the upper surface of a conductor" can be rephrased as "insulator located on the lower surface of a conductor" by rotating the orientation of the drawing 180 degrees.

[0037] Furthermore, the terms "above" and "below" do not limit the positional relationship of components to being directly above or below, and being in direct contact with each other. For example, the expression "electrode B on insulating layer A" does not necessarily mean that electrode B is formed on insulating layer A in direct contact with it, and does not exclude the inclusion of other components between insulating layer A and electrode B.

[0038] Furthermore, in this specification, terms such as "overlap" do not limit the state of the stacking order of components, etc. For example, the expression "electrode B overlapping insulating layer A" is not limited to the state "electrode B is formed on insulating layer A," but does not exclude states such as "electrode B is formed below insulating layer A" or "electrode B is formed on the right (or left) side of insulating layer A."

[0039] Furthermore, in this specification, the terms "adjacent" and "close to" do not necessarily mean that components are in direct contact with each other. For example, the expression "electrode B adjacent to insulating layer A" does not require that insulating layer A and electrode B are in direct contact with each other, and does not exclude the inclusion of other components between insulating layer A and electrode B.

[0040] Furthermore, in this specification and the like, terms such as "film" and "layer" can be interchanged depending on the situation. For example, the term "conductive layer" may be interchanged with the term "conductive film." Or, for example, the term "insulating film" may be interchanged with the term "insulating layer." Or, in some cases or depending on the situation, terms such as "film" and "layer" may not be used and may be interchanged with other terms. For example, the terms "conductive layer" or "conductive film" may be interchanged with the term "conductor." Or, for example, the terms "insulating layer" and "insulating film" may be interchanged with the term "insulator."

[0041] Furthermore, in this specification and the like, terms such as "electrode," "wiring," and "terminal" do not functionally limit these components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, the terms "electrode" and "wiring" include cases where multiple "electrodes" or "wirings" are integrally formed. Furthermore, for example, a "terminal" may be used as part of a "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" includes cases where multiple "electrodes," "wirings," "terminals," etc. are integrally formed. Therefore, for example, an "electrode" can be part of a "wiring" or "terminal," and a "terminal" can be part of a "wiring" or "electrode." Furthermore, terms such as "electrode," "wiring," and "terminal" may be replaced with terms such as "region" depending on the circumstances.

[0042] Furthermore, in this specification and the like, terms such as "wiring," "signal line," and "power line" may be interchangeable depending on the circumstances. For example, the term "wiring" may be changed to the term "signal line." For example, the term "wiring" may be changed to the term "power line." Vice versa, terms such as "signal line" and "power line" may be changed to the term "wiring." A term such as "power line" may be changed to the term "signal line." Vice versa, terms such as "signal line" may be changed to the term "power line." Furthermore, the term "potential" applied to a wiring may be changed to the term "signal" depending on the circumstances. Vice versa, terms such as "signal" may be changed to the term "potential."

[0043] In this specification and the like, the term "impurities" in semiconductors refers to, for example, elements other than the main components constituting the semiconductor layer. For example, an element with a concentration of less than 0.1 atomic % is an impurity. The presence of impurities can, for example, increase the defect level density of the semiconductor, decrease carrier mobility, or decrease crystallinity. When the semiconductor is an oxide semiconductor, impurities that change the semiconductor characteristics include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals other than the main components, particularly, for example, hydrogen (also contained in water), lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen. Specifically, when the semiconductor is a silicon layer, impurities that change the semiconductor characteristics include, for example, oxygen, Group 1 elements excluding hydrogen, Group 2 elements, Group 13 elements, and Group 15 elements.

[0044] In this specification, a switch refers to a device that can be in a conductive state (on state) or a non-conductive state (off state) and has the function of controlling whether or not a current flows. Alternatively, a switch refers to a device that has the function of selecting and switching a path through which a current flows. Examples include electrical switches and mechanical switches. In other words, the switch is not limited to a specific type as long as it can control a current.

[0045] Examples of electrical switches include transistors (e.g., bipolar transistors, MOS transistors, etc.), diodes (e.g., PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, MIS (Metal Insulator Semiconductor) diodes, diode-connected transistors, etc.), and logic circuits combining these. When a transistor is used as a switch, the "conductive state" of the transistor refers to a state in which the source electrode and drain electrode of the transistor can be considered to be electrically short-circuited. The "non-conductive state" of the transistor refers to a state in which the source electrode and drain electrode of the transistor can be considered to be electrically disconnected. When a transistor is operated simply as a switch, the polarity (conductivity type) of the transistor is not particularly limited.

[0046] An example of a mechanical switch is a switch that uses MEMS (Micro Electro Mechanical Systems) technology. This switch has a mechanically movable electrode, and the movement of the electrode controls conduction and non-conduction.

[0047] As used herein, "parallel" refers to a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. This therefore includes cases in which the angle is -5° or more and 5° or less. "Substantially parallel" or "roughly parallel" refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less. "Perpendicular" refers to a state in which two straight lines are arranged at an angle of 80° or more and 100° or less. This therefore includes cases in which the angle is 85° or more and 95° or less. "Substantially perpendicular" or "approximately perpendicular" refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0048] In this specification and elsewhere, when referring to counting and measurement values, or to objects, methods, and events that can be converted into counting or measurement values, terms such as "identical," "same," "equal," or "uniform" are used, they include a margin of error of plus or minus 20%, unless otherwise specified.

[0049] In this specification and the like, a metal oxide refers to an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply as OSs), and the like. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when a metal oxide can form a channel formation region of a transistor having at least one of an amplifying function, a rectifying function, and a switching function, the metal oxide can be referred to as a metal oxide semiconductor. Furthermore, when a metal oxide is referred to as an OS transistor, it can be rephrased as a transistor having a metal oxide or an oxide semiconductor.

[0050] In this specification and the like, nitrogen-containing metal oxides may also be collectively referred to as metal oxides. Nitrogen-containing metal oxides may also be referred to as metal oxynitrides.

[0051] In this specification and the like, the configurations shown in each embodiment can be combined as appropriate with the configurations shown in other embodiments to form one aspect of the present invention. In addition, when multiple configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate with each other.

[0052] In addition, the content (or even part of the content) described in one embodiment can be applied, combined, or replaced with at least one of another content (or even part of the content) described in that embodiment and another content (or even part of the content) described in one or more other embodiments.

[0053] Note that the content described in the embodiments refers to the content described in each embodiment (or example) using various figures, or the content described using text in the specification.

[0054] Furthermore, a figure (or even a part thereof) described in one embodiment can be combined with another part of that figure, another figure (or even a part thereof) described in that embodiment, and at least one figure (or even a part thereof) described in one or more other embodiments to form even more figures.

[0055] The embodiments described in this specification will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways, and that various changes in form and details can be made without departing from the spirit and scope of the invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments. Note that in the configuration of the invention of the embodiments, the same reference numerals are used in different drawings for the same parts or parts having similar functions, and repeated description thereof may be omitted. Furthermore, to make the drawings easier to understand, the illustration of some components may be omitted in perspective views, top views, etc.

[0056] In addition, in the drawings of this specification, the size, layer thickness, or region may be exaggerated for clarity. Therefore, the size, aspect ratio, etc. are not necessarily limited. Note that the drawings are schematic illustrations of ideal examples and are not limited to the shapes or values ​​shown in the drawings. For example, variations in signal, voltage, or current due to noise, or variations in signal, voltage, or current due to timing deviations, etc. may be included.

[0057] In this specification, when the same symbol is used for multiple elements, particularly when it is necessary to distinguish between them, an identification symbol such as “_1”, “[n]”, or “[m,n]” may be added to the symbol. For example, one of two wirings GL may be written as wiring GL[1], and the other as wiring GL[2].

[0058] (Embodiment 1) In this embodiment, a configuration example and an operation example of the storage device 100 according to one embodiment of the present invention will be described.

[0059] <Storage device configuration example> Figure 1 is a block diagram showing an example of the configuration of a storage device. Note that in the block diagram, components are classified by function and shown as independent blocks, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0060] The storage device 100 has a function of writing or reading data in response to an access request from a host device 200 such as a central processing unit (CPU), a graphics processing unit (GPU), or a digital signal processor (DSP).

[0061] The storage device 100 includes a memory control unit 110 and a memory unit 120. The memory control unit 110 includes an input / output unit 111, a control unit 112, an address management unit 113, a free block management unit 114, an ECC management unit 115 (ECC: Error Check and Correct), an ECC processing unit 116, a firmware storage unit 117, and a work memory 118.

[0062] The memory unit 120 is an area that the host device 200 can access via the memory control unit 110. Data is written to the memory unit 120 in response to a write request from the host device 200. Data stored in the memory unit 120 is read in response to a read request from the host device 200.

[0063] The memory unit 120 has a plurality of memory cells 130. The plurality of memory cells 130 operate in units of basic units called "blocks" or "memory blocks." The storage capacity of one memory block can be several tens of bits to several thousand bits. FIG. 1 shows an example in which the memory unit 120 has k memory blocks 121 (k is an integer equal to or greater than 1). Note that FIG. 1 illustrates memory units 120[1], 120[2], and 120[k], and omits memory units 120[3] to 120[k-1].

[0064] The host device 200 accesses the memory unit 120 in block units via the memory control unit 110. In addition, in this embodiment and the like, a memory block 121 in which no data is stored may be called an "empty block."

[0065] The memory unit 120 may be configured as a NOR type or a NAND type. When the memory unit 120 is configured as a NOR type, DRAM or SRAM may be used as the memory cells 130, or FG type (FG: Floating Gate) or MONOS type (MONOS: Metal Oxide Nitride Oxide Semiconductor) nonvolatile memory elements may be used.

[0066] When the memory unit 120 is configured as a NAND type, multiple memory cells 130 can be connected in series. A group of memory elements connected in series is also called a "memory string." One memory block 121 may have one memory string, or one memory block may have multiple memory strings.

[0067] FIG. 2 shows an example of a circuit configuration of a memory string. The memory string 139 shown in FIG. 2 has a configuration in which m (m is an integer greater than or equal to 2) transistors Tr are connected in series. The source of the transistor Tr[1] is electrically connected to a wiring PL, and the drain of the transistor Tr[2] is electrically connected to the source of the transistor Tr[2]. The drain of the transistor Tr[2] is electrically connected to the source of the transistor Tr[3]. The source of the transistor Tr[m] is electrically connected to the drain of the transistor Tr[m-1], and the drain of the transistor Tr[m] is electrically connected to a wiring BL. The gates of the transistors Tr[1] to Tr[m] are electrically connected to wirings CG[1] to CG[m], respectively. The transistor Tr functions as a memory element. The transistor Tr may be an FG-type memory element or a MONOS-type memory element. Therefore, the transistor Tr functions as a memory cell 130.

[0068] The input / output unit 111 functions as a data input / output unit, and has a function of inputting and outputting data between the storage device 100 and the host device 200. The control unit 112 has a function of controlling the operation of the entire storage device 100 in response to a request from the host device 200.

[0069] The address management unit 113 includes a plurality of memory cells 151 (storage elements), and a logical address conversion table 133 is stored in the plurality of memory cells 151. An example of the logical address conversion table 133 is shown in Fig. 3. The logical address conversion table 133 includes blocks AB[1] to AB[k]. Each of blocks AB[1] to AB[k] stores information that associates a logical address 140 specified by the host device 200 with a physical address of the memory unit 120.

[0070] The logical address 140 includes index information 141 and intra-block offset information 142. The index information 141 is stored on the MSB (Most Significant Bit) side of the logical address 140, and the intra-block offset information 142 is stored on the LSB (Least Significant Bit) side of the logical address 140.

[0071] 3 shows an operation of reading information associated with index information 141 from any of blocks AB[1] to AB[k] and inputting the information and intra-block offset information 142 to the control unit 112. Then, the control unit 112 calculates a physical address 143 using the input information.

[0072] The free block management unit 114 includes a plurality of memory cells 151, and a free block management table 134 is stored in the plurality of memory cells 151. An example of the free block management table 134 is shown in Fig. 4. The free block management table 134 includes blocks FB[1] to FB[k]. Blocks FB[1] to FB[k] store information about the usage status and the presence or absence of defective memory cells of memory blocks 121[1] to 121[k], respectively.

[0073] For example, 3-bit information indicating the states of memory blocks 121[1] to 121[k] is stored in blocks FB[1] to FB[k].

[0074] For example, if there is no data in memory block 121[i] (i is an integer between 1 and k) (it is unused), the first bit of block FB[i] is set to "0", and if there is data (it is in use), the first bit of block FB[i] is set to "1".

[0075] Furthermore, if the memory block 121[i] does not contain a defective memory cell, the second bit of the block FB[i] is set to “0”, and if it is determined that the memory block 121[i] contains a defective memory cell, the second bit of the block FB[i] is set to “1”.

[0076] If the memory block 121[i] is available for use, the third bit of the block FB[i] is set to "0", and if the block FB[i] is to be disabled for use, the third bit of the block FB[i] is set to "1".

[0077] When searching for free blocks (described later), only memory blocks where the third bit of block FB[i] is "0" are searched. By excluding prohibited memory blocks from the memory blocks searched, search efficiency is improved, and search time and power consumption can be reduced.

[0078] The amount of information that can be stored in one block FB may be 3 bits or more, or 2 bits or less.

[0079] The control unit 112 determines the usage status of the memory blocks 121[1] to 121[k] by learning the information stored in the blocks FB[1] to FB[k] of the free block management table 134.

[0080] Furthermore, particularly when FG-type or MONOS-type memory elements are used for the memory cells 130, repeatedly writing data to the same memory cell 130 can easily cause the memory cell 130 to deteriorate and become a defective memory cell. Therefore, it is preferable to reduce the variation in the number of times data is written to each memory cell 130 and equalize the frequency of use of the memory cells 130. It is preferable to write data preferentially to memory cells 130 that have been written to less frequently. By equalizing the frequency of use of the memory cells 130, it is possible to suppress an increase in defective memory cells and improve the reliability of the storage device 100.

[0081] The ECC management unit 115 includes a plurality of memory cells 151, and an ECC management table 135 is stored in the plurality of memory cells 151. Fig. 5 shows an example of the ECC management table 135. The ECC management table 135 includes blocks ECCB[1] to ECCB[k]. Blocks ECCB[1] to ECCB[k] store information related to error correction for memory blocks 121[1] to 121[k], respectively.

[0082] For example, block ECCB[1] through block ECCB[k] store 1-bit information indicating whether error correction is required for memory blocks 121[1] through 121[k]. For example, if error detection and correction are not required for memory block 121[i], "0" is stored in block ECCB[i], and if error detection and correction are required, "1" is stored in block ECCB[i]. Note that block ECCB may store information of 2 or more bits.

[0083] The control unit 112 determines whether or not error correction is required for the memory blocks 121[1] to 121[k] by checking the information stored in the blocks ECCB[1] to ECCB[k] of the ECC management table 135.

[0084] In this embodiment, one memory block 121 is allocated to one block ECCB, but multiple memory blocks 121 may be allocated to one block ECCB.

[0085] The ECC processing unit 116 has a function for detecting and correcting errors in the memory unit 120. For example, the ECC processing unit 116 has an error correction function using a BCH code, a Reed-Solomon code, a CRC code (CRC: Cyclic Redundancy Check), or the like.

[0086] The firmware storage unit 117 has multiple storage elements and has the function of storing firmware. The firmware is a program that the control unit 112 executes to control the storage device 100. The control unit 112 controls the overall operation of the storage device 100 in accordance with the firmware.

[0087] The work memory 118 has a function of temporarily storing data required when the control unit 112 executes firmware. For the work memory 118, for example, an SRAM (Static Random Access Memory), a DRAM (Dynamic Random Access Memory), or the like can be used.

[0088] The memory cells 130 may have a higher error rate due to the effect of variations in the electrical characteristics of the elements, which may increase the retention time. Therefore, error correction is very effective in improving the retention characteristics and reliability of the storage device 100.

[0089] 6A shows an example of a circuit configuration of a memory cell 151 included in each of the address management unit 113, the free block management unit 114, and the ECC management unit 115. The memory cell 151 shown in FIG. 6A is a 1Tr1C type memory circuit having one transistor M and one capacitance element Cfe, and functions as an FeRAM (Ferroelectric Random Access Memory).

[0090] Various semiconductor materials can be used for the semiconductor layer in which the channel of the transistor M is formed. For example, a single crystal semiconductor, a polycrystalline semiconductor, a microcrystalline semiconductor, an amorphous semiconductor, or the like can be used alone or in combination as the semiconductor layer in which the channel of the transistor M is formed. Examples of the semiconductor material that can be used include silicon and germanium. Compound semiconductors such as silicon germanium, silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors can also be used.

[0091] Note that an oxide semiconductor has a band gap of 2 eV or more; therefore, a transistor using an oxide semiconductor for a semiconductor layer in which a channel is formed (also referred to as an "OS transistor") has an extremely low off-state current. When an OS transistor is used as the transistor M, data written to the memory cell 151 can be retained for a long period of time. When an OS transistor is used as the transistor constituting the memory cell 151, the memory cell 151 can be called an "OS memory."

[0092] An OS transistor is preferably used as the transistor M. An OS transistor has a characteristic of being highly resistant to voltage. Therefore, by using an OS transistor as the transistor M, a high voltage can be applied to the transistor M even when the transistor M is miniaturized. Miniaturization of the transistor M can reduce the area occupied by the memory cells 151. For example, the area occupied by each memory cell 151 shown in FIG. 6A can be 1 / 3 to 1 / 6 of the area occupied by each SRAM cell. Therefore, the memory cells 151 can be arranged with high density. As a result, the memory device according to one embodiment of the present invention can be a memory device with a large storage capacity.

[0093] The oxide semiconductor used in the OS transistor may be a c-axis aligned crystalline oxide semiconductor (CAAC-OS), an nc-OS, or an a-like OS.

[0094] The CAAC-OS is an oxide semiconductor having multiple crystalline regions whose c-axes are oriented in a specific direction. The specific direction may be the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. The crystalline regions are regions with periodic atomic arrangement.

[0095] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystals. Note that the size of the microcrystals is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore the microcrystals are also called nanocrystals. Furthermore, the nc-OS does not exhibit regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor.

[0096] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and the CAAC-OS.

[0097] Note that the transistor M may or may not have a back gate in addition to a gate. Although the transistor M is an n-channel transistor in FIG. 6A, the transistor M may be a p-channel transistor.

[0098] One of the source and drain of the transistor M is electrically connected to a wiring BL. The other of the source and drain of the transistor M is electrically connected to one electrode of a capacitor Cfe. The gate of the transistor M is electrically connected to a wiring WL. The other electrode of the capacitor Cfe is electrically connected to a wiring PL.

[0099] The wiring WL functions as a word line, and controlling the potential of the wiring WL can control the on / off state of the transistor M. For example, the transistor M can be turned on by setting the potential of the wiring WL to a high potential, and the transistor M can be turned off by setting the potential of the wiring WL to a low potential.

[0100] The wiring BL functions as a bit line, and when the transistor M is on, a potential corresponding to the potential of the wiring BL is supplied to one electrode of the capacitor Cfe.

[0101] The wiring PL functions as a plate line, and the potential of the wiring PL can be set to the potential of the other electrode of the capacitor Cfe.

[0102] The capacitance element Cfe has a dielectric layer between two electrodes, the dielectric layer being made of a material that can have ferroelectricity. In this specification and the like, a dielectric layer made of a material that can have ferroelectricity may be referred to as a "ferroelectric layer."

[0103] Materials that can have ferroelectric properties include hafnium oxide, zirconium oxide, and HfZrO X (X is a real number greater than 0), hafnium oxide to which element J1 (here, element J1 is zirconium (Zr), silicon (Si), aluminum (Al), gadolinium (Gd), yttrium (Y), lanthanum (La), strontium (Sr), etc.) is added, and zirconium oxide to which element J2 (here, element J2 is hafnium (Hf), silicon (Si), aluminum (Al), gadolinium (Gd), yttrium (Y), lanthanum (La), strontium (Sr), etc.) is added. Furthermore, materials that may have ferroelectricity include PbTiO XPiezoelectric ceramics having a perovskite structure, such as barium strontium titanate (BST), strontium titanate, lead zirconate titanate (PZT), strontium bismuth tantalate (SBT), bismuth ferrite (BFO), and barium titanate, may also be used. Furthermore, as a material that can exhibit ferroelectricity, for example, a mixture or compound containing multiple materials selected from the materials listed above may be used. Alternatively, the dielectric layer may have a laminated structure made of multiple materials selected from the materials listed above.

[0104] In particular, it is preferable to use hafnium oxide or a material containing hafnium oxide and zirconium oxide as a material that can exhibit ferroelectricity. Hafnium oxide or a material containing hafnium oxide and zirconium oxide is preferable because it can exhibit ferroelectricity even when processed into a thin film of a few nanometers. Here, the film thickness of the dielectric layer can be 100 nm or less, preferably 50 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less (typically 2 nm or more and 9 nm or less). By thinning the dielectric layer, it is possible to form a memory device by combining the capacitor element Cfe with a miniaturized transistor.

[0105] In addition, HfZrO is a material that can have ferroelectric properties. XWhen using a ferroelectric material, it is preferable to form the film by atomic layer deposition (ALD), particularly by thermal ALD. Furthermore, when forming a film of a material that can have ferroelectricity using thermal ALD, it is preferable to use a material that does not contain hydrocarbons (also called hydrocarbon, HC) as a precursor. If the material that can have ferroelectricity contains either or both of hydrogen and carbon, this may inhibit the crystallization of the material that can have ferroelectricity. Therefore, as described above, it is preferable to use a precursor that does not contain hydrocarbons to reduce the concentration of either or both of hydrogen and carbon in the material that can have ferroelectricity. For example, a chlorine-based material can be used as a precursor that does not contain hydrocarbons. Furthermore, as a material that can have ferroelectricity, a material containing hafnium oxide and zirconium oxide (HfZrO x ) is used, HfCl4 and / or ZrCl4 may be used as the precursor.

[0106] When a film is formed using a material that can have ferroelectricity, impurities in the film, in this case at least one of hydrogen, hydrocarbon, and carbon, are thoroughly removed to form a film having high-purity intrinsic ferroelectricity. The manufacturing process of a film having high-purity intrinsic ferroelectricity and an oxide semiconductor is highly compatible. Therefore, a method for manufacturing a memory device with high productivity can be provided.

[0107] The hydrogen concentration of the material that can have ferroelectricity obtained by secondary ion mass spectrometry (SIMS) is 5×10 20 atoms / cm 3 Less than 1×10 is preferred 20 atoms / cm 3 The carbon concentration of the material that can have ferroelectricity obtained by SIMS is preferably 5×10 or less. 19 atoms / cm 3 Less than 1×10 is preferred 19 atoms / cm 3 The following is more preferred:

[0108] In addition, HfZrO is a material that can have ferroelectric properties. X When used, it is preferable to use a thermal ALD method to alternately form films of hafnium oxide and zirconium oxide in a 1:1 ratio.

[0109] Furthermore, when a film of a material that may have ferroelectricity is formed using a thermal ALD method, the oxidizing agent may be H2O or O3. However, the oxidizing agent for the thermal ALD method is not limited to these. For example, the oxidizing agent for the thermal ALD method may include one or more selected from O2, O3, N2O, NO2, H2O, and H2O2.

[0110] Furthermore, the crystal structure of the material capable of exhibiting ferroelectricity is not particularly limited. For example, the crystal structure of the material capable of exhibiting ferroelectricity may be one or more selected from the group consisting of cubic, tetragonal, orthorhombic, and monoclinic. In particular, the material capable of exhibiting ferroelectricity preferably has an orthorhombic crystal structure, since ferroelectricity is exhibited. Alternatively, the material capable of exhibiting ferroelectricity may have a composite structure having an amorphous structure and a crystalline structure.

[0111] A ferroelectric layer, which is a dielectric layer made of a material that can have ferroelectricity, has a hysteresis characteristic. Figure 6B is a graph showing an example of the hysteresis characteristic. In Figure 6B, the horizontal axis represents the voltage applied to the ferroelectric layer. The voltage can be, for example, the difference between the potential of one electrode of the capacitance element Cfe and the potential of the other electrode of the capacitance element Cfe.

[0112] 6B, the vertical axis represents the polarization of the ferroelectric layer, and a positive value indicates that positive charges are biased toward one electrode of the capacitance element Cfe and negative charges are biased toward the other electrode of the capacitance element Cfe, whereas a negative value indicates that positive charges are biased toward the other electrode of the capacitance element Cfe and negative charges are biased toward one electrode of the capacitance element Cfe.

[0113] The voltage shown on the horizontal axis of the graph in Fig. 6B may be the difference between the potential of the other electrode of the capacitance element Cfe and the potential of one electrode of the capacitance element Cfe. Also, the polarization shown on the vertical axis of the graph in Fig. 6B may be a positive value when positive charges are biased toward the other electrode of the capacitance element Cfe and negative charges are biased toward one electrode of the capacitance element Cfe, and a negative value when positive charges are biased toward one electrode of the capacitance element Cfe and negative charges are biased toward the other electrode of the capacitance element Cfe.

[0114] 6B, the hysteresis characteristic of the ferroelectric layer can be represented by a curve 51 and a curve 52. The voltages at the intersections of the curves 51 and 52 are designated as VSP and −VSP. It can be said that VSP and −VSP have opposite polarities.

[0115] When a voltage equal to or less than -VSP is applied to the ferroelectric layer and then the voltage applied to the ferroelectric layer is increased, the polarization amount of the ferroelectric layer increases according to curve 51. On the other hand, when a voltage equal to or greater than VSP is applied to the ferroelectric layer and then the voltage applied to the ferroelectric layer is decreased, the polarization amount of the ferroelectric layer decreases according to curve 52. Therefore, VSP and -VSP can be referred to as saturation polarization voltages. Note that, for example, VSP may be referred to as the first saturation polarization voltage, and -VSP may be referred to as the second saturation polarization voltage. Also, although FIG. 6B shows that the absolute values ​​of the first and second saturation polarization voltages are equal, they may be different.

[0116] Here, Vc denotes the voltage applied to the ferroelectric layer when the polarization of the ferroelectric layer changes according to curve 51 and the polarization of the ferroelectric layer is zero. Furthermore, −Vc denotes the voltage applied to the ferroelectric layer when the polarization of the ferroelectric layer changes according to curve 52 and the polarization of the ferroelectric layer is zero. Vc and −Vc can be referred to as coercive voltages. The values ​​of Vc and −Vc can be referred to as values ​​between −VSP and VSP. For example, Vc may be referred to as the first coercive voltage, and −Vc may be referred to as the second coercive voltage. Although FIG. 6B shows that the absolute values ​​of the first coercive voltage and the second coercive voltage are equal, they may be different.

[0117] When no voltage is applied to the ferroelectric layer, the maximum value of polarization is called the "remanent polarization Pr" and the minimum value is called the "remanent polarization -Pr." The difference between the remanent polarization Pr and the remanent polarization -Pr is called the "remanent polarization 2Pr."

[0118] As described above, the voltage applied to the ferroelectric layer of the capacitor Cfe can be expressed as the difference between the potential of one electrode of the capacitor Cfe and the potential of the other electrode of the capacitor Cfe. Also, as described above, the other electrode of the capacitor Cfe is electrically connected to the wiring PL. Therefore, by controlling the potential of the wiring PL, the voltage applied to the ferroelectric layer of the capacitor Cfe can be controlled.

[0119] The configuration of the memory cell 151 may be used for the memory cell 130.

[0120] <Memory cell driving method example> An example of a method for driving the memory cell 151 shown in Figure 6A will be described below. In the following description, the voltage applied to the ferroelectric layer of the capacitance element Cfe refers to the difference between the potential of one electrode of the capacitance element Cfe and the potential of the other electrode (wiring PL) of the capacitance element Cfe. The transistor M is an n-channel transistor.

[0121] 6C is a timing chart showing an example of a method for driving the memory cell 151 shown in FIG. 6A. FIG. 6C shows an example of writing and reading binary digital data to the memory cell 151. Specifically, FIG. 6C shows an example of writing data “1” to the memory cell 151 from time T01 to time T02, reading and rewriting from time T03 to time T05, reading from time T11 to time T13 and writing data “0” to the memory cell 151, reading and rewriting from time T14 to time T16, and reading from time T17 to time T19 and writing data “1” to the memory cell 151.

[0122] A reference potential Vref is supplied to the sense amplifier electrically connected to the line BL. In the read operation shown in FIG. 6C, when the potential of the line BL is higher than Vref, data "1" is read by the bit line driver circuit. On the other hand, when the potential of the line BL is lower than Vref, data "0" is read by the bit line driver circuit.

[0123] Between time T01 and time T02, the potential of the wiring WL is set to a high potential. This turns on the transistor M. Furthermore, the potential of the wiring BL is set to Vw. Since the transistor M is on, the potential of one electrode of the capacitor Cfe becomes Vw. Furthermore, the potential of the wiring PL is set to GND. As a result, the voltage applied to the ferroelectric layer of the capacitor Cfe becomes "Vw-GND." This allows data "1" to be written to the memory cell 151. Therefore, the period from time T01 to time T02 can be said to be a period during which a write operation is performed.

[0124] Here, Vw is preferably equal to or greater than VSP, for example. GND can be, for example, a ground potential; however, GND does not necessarily have to be a ground potential as long as the memory cell 151 can be driven to satisfy the spirit of one embodiment of the present invention. For example, if the absolute values ​​of the first and second saturation polarization voltages are different and the absolute values ​​of the first and second coercive voltages are different, GND can be a potential other than ground.

[0125] Between time T02 and time T03, the potential of the wiring BL and the potential of the wiring PL are set to GND. As a result, the voltage applied to the ferroelectric layer of the capacitance element Cfe becomes 0V. Since the voltage "Vw-GND" applied to the ferroelectric layer of the capacitance element Cfe between time T01 and time T02 can be set to VSP or higher, the polarization amount of the ferroelectric layer of the capacitance element Cfe changes according to curve 52 shown in FIG. 6B between time T02 and time T03. As a result, no polarization reversal occurs in the ferroelectric layer of the capacitance element Cfe between time T02 and time T03.

[0126] After the potentials of the wiring BL and the wiring PL are set to GND, the potential of the wiring WL is set to a low potential. This turns off the transistor M. This completes the write operation, and data "1" is stored in the memory cell 151. The potentials of the wiring BL and the wiring PL can be set to any potential as long as no polarization reversal occurs in the ferroelectric layer of the capacitance element Cfe, that is, as long as the voltage applied to the ferroelectric layer of the capacitance element Cfe is equal to or higher than the second coercive voltage -Vc.

[0127] Between time T03 and time T04, the potential of the wiring WL is set to a high potential. This turns on the transistor M. The potential of the wiring PL is set to Vw. By setting the potential of the wiring PL to Vw, the voltage applied to the ferroelectric layer of the capacitance element Cfe becomes "GND-Vw." As described above, the voltage applied to the ferroelectric layer of the capacitance element Cfe is "Vw-GND" between time T01 and time T02. Therefore, polarization reversal occurs in the ferroelectric layer of the capacitance element Cfe. During polarization reversal, current flows through the wiring BL, and the potential of the wiring BL becomes higher than Vref. This allows the bit line driver circuit to read the data "1" stored in the memory cell 151. Therefore, the period from time T03 to time T04 can be considered a period during which a read operation is performed. Note that although Vref is higher than GND and lower than Vw, it may also be higher than Vw, for example.

[0128] Since the above read is destructive read, the data "1" held in the memory cell 151 is lost. Therefore, from time T04 to time T05, the potential of the wiring BL is set to Vw, and the potential of the wiring PL is set to GND. As a result, the data "1" is rewritten to the memory cell 151. Therefore, the period from time T04 to time T05 can be said to be a period in which a rewrite operation is performed.

[0129] From time T05 to time T11, the potentials of the wiring BL and the wiring PL are set to GND. Then, the potential of the wiring WL is set to low. Thus, the rewrite operation is completed, and data "1" is held in the memory cell 151.

[0130] Between time T11 and time T12, the potential of the wiring WL is set to a high potential, and the potential of the wiring PL is set to Vw. Since data "1" is stored in the memory cell 151, the potential of the wiring BL becomes higher than Vref, and the data "1" stored in the memory cell 151 is read. Therefore, the period from time T11 to time T12 can be considered a period in which a read operation is performed.

[0131] From time T12 to time T13, the potential of the wiring BL is set to GND. Since the transistor M is on, the potential of one electrode of the capacitor Cfe is set to GND. Also, the potential of the wiring PL is set to Vw. As a result, the voltage applied to the ferroelectric layer of the capacitor Cfe is "GND-Vw." This allows data "0" to be written to the memory cell 151. Therefore, the period from time T12 to time T13 can be said to be a period during which a write operation is performed.

[0132] Between time T13 and time T14, the potential of the wiring BL and the potential of the wiring PL are set to GND. As a result, the voltage applied to the ferroelectric layer of the capacitance element Cfe becomes 0V. Since the voltage "GND-Vw" applied to the ferroelectric layer of the capacitance element Cfe between time T12 and time T13 can be set to -VSP or less, the polarization amount of the ferroelectric layer of the capacitance element Cfe between time T13 and time T14 changes according to the curve 51 shown in FIG. 6B. As a result, no polarization reversal occurs in the ferroelectric layer of the capacitance element Cfe between time T13 and time T14.

[0133] After the potentials of the wiring BL and the wiring PL are set to GND, the potential of the wiring WL is set to a low potential. This turns off the transistor M. This completes the write operation, and data "0" is stored in the memory cell 151. The potentials of the wiring BL and the wiring PL can be set to any potential as long as no polarization reversal occurs in the ferroelectric layer of the capacitance element Cfe, that is, as long as the voltage applied to the ferroelectric layer of the capacitance element Cfe is equal to or lower than the first coercive voltage Vc.

[0134] From time T14 to time T15, the potential of the line WL is set to a high potential. This turns on the transistor M. The potential of the line PL is set to Vw. By setting the potential of the line PL to Vw, the voltage applied to the ferroelectric layer of the capacitive element Cfe becomes “GND-Vw.” As described above, the voltage applied to the ferroelectric layer of the capacitive element Cfe is “GND-Vw” from time T12 to time T13. Therefore, no polarization reversal occurs in the ferroelectric layer of the capacitive element Cfe. Therefore, the amount of current flowing through the line BL is smaller than when polarization reversal occurs in the ferroelectric layer of the capacitive element Cfe. As a result, the increase in the potential of the line BL is smaller than when polarization reversal occurs in the ferroelectric layer of the capacitive element Cfe. Specifically, the potential of the line BL is below Vref. Therefore, the bit line driver circuit can read the data “0” stored in the memory cell 151. Therefore, the period from time T14 to time T15 can be considered a period during which a read operation is performed.

[0135] From time T15 to time T16, the potential of the wiring BL is set to GND, and the potential of the wiring PL is set to Vw, thereby rewriting data "0" to the memory cell 151. Thus, the period from time T15 to time T16 can be considered a period in which a rewrite operation is performed.

[0136] From time T16 to time T17, the potentials of the wiring BL and the wiring PL are set to GND. Then, the potential of the wiring WL is set to low. Thus, the rewrite operation is completed, and data "0" is held in the memory cell 151.

[0137] Between times T17 and T18, the potential of the wiring WL is set to a high potential, and the potential of the wiring PL is set to Vw. Because data "0" is stored in the memory cell 151, the potential of the wiring BL becomes lower than Vref, and the data "0" stored in the memory cell 151 is read. Therefore, the period from time T17 to time T18 can be considered a period in which a read operation is performed.

[0138] From time T18 to time T19, the potential of the wiring BL is set to Vw. Because the transistor M is on, the potential of one electrode of the capacitor Cfe is Vw. The potential of the wiring PL is set to GND. As a result, the voltage applied to the ferroelectric layer of the capacitor Cfe is "Vw-GND." This allows data "1" to be written to the memory cell 151. Therefore, the period from time T18 to time T19 can be said to be a period during which a write operation is performed.

[0139] After time T19, the potentials of the wirings BL and PL are set to GND. Then, the potential of the wiring WL is set to low. This completes the write operation, and data "1" is stored in the memory cell 151.

[0140] The memory cell 151, which uses a ferroelectric layer for the capacitance element Cfe, functions as a nonvolatile memory element that can retain written information even when power supply is stopped. Furthermore, by using the memory cell 151 in the storage device 100, the information in the logical address translation table 133, the free block management table 134, and the ECC management table 135 can be retained even when power supply to the storage device 100 is stopped.

[0141] Furthermore, if the storage areas for storing the logical address translation table 133, the free block management table 134, and the ECC management table 135 were configured with DRAM, periodic refresh operations would be required, resulting in increased power consumption. However, by configuring these storage areas with memory cells 151 that use a ferroelectric layer for the capacitance element Cfe, the power consumption of the storage device 100 can be reduced.

[0142] The memory cell 151 may be a 2Tr2C memory circuit having two transistors (transistor M1 and transistor M2) and two capacitors (capacitors Cfe1 and Cfe2) as shown in FIG. 7A. In the memory cell 151 shown in FIG. 7A, one of the source and drain of the transistor M1 is electrically connected to a wiring BL1. The other of the source and drain of the transistor M1 is electrically connected to one electrode of the capacitor Cfe1. The one of the source and drain of the transistor M2 is electrically connected to a wiring BL2. The other of the source and drain of the transistor M2 is electrically connected to one electrode of the capacitor Cfe2. The gates of the transistor M1 and the transistor M2 are electrically connected to a wiring WL. The other electrodes of the capacitors Cfe1 and Cfe2 are electrically connected to a wiring PL. The wiring BL1 and the wiring BL2 function as bit lines. The memory cell 151 shown in FIG. 7A functions as an FeRAM.

[0143] 7B, a ferroelectric-gate field-effect transistor (FeFET) may be used as the memory cell 151. The ferroelectric gate transistor Mfe is a field-effect transistor that uses a ferroelectric for the gate insulating film. One of the source or drain of the ferroelectric gate transistor Mfe is electrically connected to the wiring BL1, the other is electrically connected to the wiring PL, and the gate is electrically connected to the wiring WL.

[0144] 7C, a transistor M and an FTJ element 152 (FTJ: Ferroelectric Tunnel Junction or Ferroelectric Transportation Junction) may be used as the memory cell 151. In FIG. 7C, one of the source or drain of the transistor M is electrically connected to one electrode of the FTJ element 152, the other of the source or drain is electrically connected to a wiring PL, and the gate is electrically connected to a wiring WL. The other electrode of the FTJ element 152 is electrically connected to a wiring BL.

[0145] Alternatively, the memory cell 151 may be a 2Tr1C memory circuit including two transistors (transistor M1 and transistor M2) and one capacitor (capacitor Cfe) as shown in FIG. 7D. In the memory cell 151 shown in FIG. 7D, one of the source and the drain of the transistor M1 is electrically connected to a wiring WBL. The other of the source and the drain of the transistor M1 is electrically connected to one electrode of the capacitor Cfe. The gate of the transistor M1 is electrically connected to a wiring WWL. The transistor M1 shown in FIG. 7D is a transistor having a back gate. The back gate of the transistor M1 is electrically connected to a wiring BGL.

[0146] One of the source and drain of the transistor M2 is electrically connected to the wiring RBL. The other of the source and drain of the transistor M2 is electrically connected to the wiring PL. The gate of the transistor M2 is electrically connected to one electrode of the capacitor Cfe. The other electrode of the capacitor Cfe is electrically connected to the wiring RWL. The wiring WBL and the wiring RBL function as bit lines. The wiring WWL and the wiring RWL function as word lines.

[0147] 7E, the capacitance element Cfe of the memory cell 151 shown in FIG. 7D may be replaced with an FTJ element 152. In the memory cell 151 shown in FIG. 7E, one electrode of the FTJ element 152 is electrically connected to the other of the source or drain of the transistor M1 and the gate of the transistor M2. The other electrode of the FTJ element 152 is electrically connected to the wiring RWL.

[0148] In this specification, a memory element or memory circuit including a ferroelectric layer is called a "ferroelectric memory" or an "FE memory." Therefore, the memory cell 151 is both a ferroelectric memory and an FE memory. The FE memory has a capacitance of 1×10 10 or more, preferably 1 × 10 12 or more, more preferably 1×10 15 Furthermore, FE memory is expected to achieve an operating frequency of 10 MHz or more, preferably 1 GHz or more.

[0149] Furthermore, in FE memory, there is a correlation between the remanent polarization 2Pr and data retention capacity, and as the remanent polarization 2Pr decreases, the data retention capacity decreases. In this specification, the period until the remanent polarization 2Pr decreases by 5% (the data retention capacity decreases by 5%) is called the "memory retention period." FE memory is expected to achieve a memory retention period of 10 days or more, preferably 1 year or more, and more preferably 10 years or more at an ambient temperature of 150°C or 200°C.

[0150] FE memory can also be applied to cache memory and / or registers of CPUs, GPUs, etc. By combining FE memory with CPU cache memory and / or registers, Noff-CPU (Nomaly off CPU) can be realized. By combining FE memory with GPU cache memory and / or registers, Noff-GPU (Nomaly off CPU) can be realized.

[0151] The storage device 100 according to one embodiment of the present invention has a function of determining whether or not error correction by the ECC processing unit 116 is necessary, using the address management unit 113, the free block management unit 114, and the ECC management unit 115. This makes it possible to improve reliability, increase the execution processing speed, and reduce power consumption.

[0152] <Example of storage device operation> An example of the operation of the storage device 100 will be described with reference to the flowcharts shown in FIGS.

[0153] <<Initialization>> FIG. 8 is a flowchart illustrating the initialization operation that is performed when power supply to the storage device 100 is started.

[0154] [Step S11] In step S11, the logical address conversion table 133 is initialized. Specifically, the control unit 112 accesses the address management unit 113 and deletes the data of blocks AB[1] to AB[k] in the logical address conversion table 133.

[0155] [Step S12] In step S12, the free block management unit 114 is initialized. Specifically, the control unit 112 accesses the free block management unit 114 and writes “0” to blocks FB[1] to FB[k] in the free block management table 134.

[0156] [Step S13] In step S13, the ECC management table 135 is initialized. Specifically, the control unit 112 accesses the ECC management unit 115 and writes “0” to the blocks ECCB[1] to ECCB[K] of the ECC management table 135.

[0157] The initialization operation of the storage device 100 is not limited to the flowchart of Fig. 8. For example, there is no limitation on the order in which the logical address conversion table 133, the free block management table 134, and the ECC management table 135 are initialized, and the order may be changed or they may be initialized simultaneously.

[0158] <<Write operation>> 9 is a flowchart showing an example of the operation of the storage device 100 in response to a write access from the host device 200. When there is a request from the host device 200 to write data to the storage device 100, the control unit 112 performs the processes of steps S21 to S26. Here, the write data sent from the host device 200 is referred to as "data WDA-1."

[0159] [Step S21] In step S21, a search is made to determine whether there is a memory block 121 in which no data is stored (Yes) or not (No). Specifically, the control unit 112 accesses the free block management unit 114 to search for a memory block 121 in which no data is stored (also called an "empty block") stored in the free block management table 134. Here, the memory block 121 in which no data is stored is referred to as "memory block 121[x]."

[0160] If no free block is found, step S51 (connector C, see FIG. 11B) is carried out. Step S51 will be explained later.

[0161] [Step S22] If memory block 121[x] exists, data WDA-1 is written to memory block 121[x]. Here, the data written to memory block 121[x] is referred to as "data WDA-2."

[0162] The data WDA- 1 sent from the host device 200 is also temporarily written to the work memory 118 .

[0163] [Step S23] In step S23, a process is performed to read the data WDA-2 written in step S22.

[0164] [Step S24] In step S24, it is determined whether the data WDA-2 read out in step S23 matches the data WDA-1 temporarily saved in the work memory 118 (Yes) or not (No).

[0165] If data WDA-1 and data WDA-2 match, step S25 is performed. If data WDA-1 and data WDA-2 do not match in step S24, step S27 is performed. If data WDA-1 and data WDA-2 do not match, this means that a defective memory cell exists in memory block 121[x].

[0166] [Step S25] In step S25, the control unit 112 accesses the address management unit 113 and the free block management unit 114, and writes predetermined information into the logical address conversion table 133 and the free block management table 134. Specifically, in the logical address conversion table 133, the control unit 112 writes the index information 141 of the logical address 140 sent from the host device 200 together with the data WDA-1 to the block AB[x] corresponding to the memory block 121[x], and in the free block management table 134, the control unit 112 writes the data “1” to the first bit of the block FB[x] corresponding to the memory block 121[x].

[0167] [Step S26] In step S26, a signal notifying that the writing of data WDA-1 has been completed is sent to host device 200 via input / output unit 111.

[0168] [Step S27] If the data WDA-1 and the data WDA-2 do not match, step S27 is performed. That is, if a defective memory cell exists in the memory block 121[x], step S27 is performed. In step S27, “1” is written to the second bit of the block FB[x] in the free block management table 134 corresponding to the memory block 121[x].

[0169] By storing information indicating the presence of a defective memory cell in the block FB of the free block management table 134, the efficiency of searching for free blocks can be improved, the operating speed of the storage device 100 can be improved, and power consumption can be reduced.

[0170] [Step S28] In step S28, similar to step S21, a search is made to determine whether there are any memory blocks 121 in which no data is stored (Yes) or not (No). However, in step S28, a search is made for free blocks in which the presence of defective memory cells has not been confirmed. That is, the control unit 112 accesses the free block management table 134 to search for memory blocks in which the first and second bits of block FB are both "0".

[0171] If an empty block exists, the process returns to step S22, and if no empty block exists, the process proceeds to step S31 (connector A, see FIG. 10).

[0172] 10 shows a flowchart of steps S31 to S37. The flowchart shown in Fig. 10 shows the operation performed when defective memory cells exist in all free blocks of memory unit 120. A memory block 121 that can correct errors is found from among memory blocks 121 that contain defective memory cells, and data is stored in that memory block 121.

[0173] [Step S31] In step S31, a search is made to determine whether or not there is an empty memory block 121 containing a defective memory cell (Yes) or not (No). Specifically, the control unit 112 accesses the free block management unit 114 and searches for an empty memory block 121 containing a defective memory cell from the free block management table 134. That is, the free block management table 134 is accessed to search for a memory block whose first bit of block FB is "0" and whose second bit is "1".

[0174] If there is a corresponding memory block, the process proceeds to step S32. If there is no corresponding memory block, the process proceeds to step S51 (connector C, see FIG. 11B). Here, the found memory block 121 is defined as memory block 121[y].

[0175] [Step S32] In step S32, the data WDA-1 is written to the memory block 121[y]. Here, the data written to the memory block 121[y] is referred to as "data WDA-2."

[0176] The data WDA- 1 sent from the host device 200 is also temporarily written to the work memory 118 .

[0177] [Step S33] In step S33, a process is performed to read the data WDA-2 written in step S32.

[0178] [Step S34] In step S34, the data WDA-2 read in step S33 is subjected to error correction by the ECC processing unit 116. Here, the data corrected by the ECC processing unit 116 is referred to as data WDA-3.

[0179] [Step S35] In step S35, the control unit 112 determines whether the data WDA-3 corrected in step S34 and the data WDA-1 temporarily saved by the work memory 118 match (Yes) or not (No).

[0180] If the data WDA-1 and WDA-3 match in step S35, the process proceeds to step S41 (connector B, see FIG. 11A). If the data WDA-1 and WDA-3 do not match, the process proceeds to step S36.

[0181] [Step S36] If the data WDA-1 and the data WDA-2 do not match, step S36 is performed. That is, if error correction using the ECC processing unit 116 is not possible, step S36 is performed. In step S36, a "1" is written to the third bit of the block FB[x] in the free block management table 134 that corresponds to the memory block 121[x]. As described above, a block FB with a "1" stored in the third bit is excluded from the search for a free block.

[0182] [Step S37] In step S37, similar to step S31, a search is made to determine whether there is an empty memory block 121 containing a defective memory cell (Yes) or not (No). If there is another empty block, the process returns to step S32. If there is no other empty block, step S51 (connector C, see FIG. 11B) is performed.

[0183] Fig. 11A is a flowchart showing steps S41 to S43, which is a flowchart for explaining the operation performed after the ECC processing unit 116 has performed error detection and correction.

[0184] [Step S41] In step S41, the control unit 112 accesses the ECC management unit 115 of the memory unit 120 and writes predetermined information into the ECC management table 135. Specifically, in the ECC management table 135, data “1” is written into the block ECCB[y] corresponding to the memory block 121[y].

[0185] [Step S42] In step S42, the control unit 112 accesses the address management unit 113 and the free block management unit 114, and writes predetermined information into the logical address conversion table 133 and the free block management table 134. Specifically, in the logical address conversion table 133, the control unit 112 writes the index information 141 of the logical address 140 sent from the host device 200 together with the data WDA-1 to the block AB[y] corresponding to the memory block 121[y], and also writes the data "1" to the first bit of the block FB[y] corresponding to the memory block 121[y] in the free block management table 134.

[0186] The order of steps S41 and S42 is not limited to that shown in the flowchart of Fig. 11A. For example, step S42 may be performed first, followed by step S41. Steps S41 and S42 may also be performed simultaneously.

[0187] [Step S43] In step S43, a signal notifying that the writing of data WDA-1 has been completed is sent to host device 200 via input / output unit 111.

[0188] 11B shows a flowchart including step S51. Step S51 is an operation performed when no free block is found.

[0189] [Step S51] In step S51, a signal notifying that there is no area to write data WDA-1 is sent to host device 200 via input / output unit 111.

[0190] <<Read operation>> 12 is a flowchart showing an example of the operation of the storage device 100 in response to a read access from the host device 200. When there is a data read request from the host device 200 to the storage device 100, the control unit 112 performs the processes of steps S61 to S65. Here, the data read from the storage device 100 is referred to as "data RDA-1."

[0191] [Step S61] In step S61, the control unit 112 uses the logical address conversion table 133 of the address management unit 113 to calculate the physical address of the memory block 121 storing the data RDA-1 requested to be read by the host device 200. Here, the memory block 121 storing the data RDA-1 is assumed to be memory block 121[z].

[0192] [Step S62] In step S62, the control unit 112 accesses the memory unit 120 and reads out the data RDA-1 stored in the memory block 121[z] at the physical address calculated in step S61.

[0193] [Step S63] In step S63, the control unit 112 reads information (also referred to as "ECC information") about the memory block 121[z] stored in the ECC management table 135 of the ECC management unit 115. If the ECC information is "0", error correction is not required, and if it is "1", error correction is required.

[0194] [Step S64] In step S64, the ECC information read in step S63 is checked. If the value of the ECC information is "0", the process proceeds to step S65. If the value of the ECC information is "1", the process proceeds to step S66.

[0195] [Step S66] In step S66, the control unit 112 accesses the ECC processing unit 116, and the ECC processing unit 116 performs error correction on the data RDA-1 read in step S61. Here, the data corrected by the ECC processing unit 116 is set as data RDA-2. Then, the process proceeds to step S65.

[0196] [Step S65] In step S65, the read data is transmitted to the host device 200 via the input / output unit 111. Specifically, if the process proceeds directly from step S64 to step S65, the storage device 100 transmits data RDA-1 to the host device 200. If the process proceeds to step S65 via step S66, the storage device 100 transmits data RDA-2 to the host device 200.

[0197] According to one embodiment of the present invention, a highly reliable storage device, a storage device with high operation speed, and a storage device with reduced power consumption can be realized.

[0198] This embodiment mode can be implemented in appropriate combination with any of the structures described in other embodiment modes.

[0199] (Embodiment 2) In this embodiment, an application example of a semiconductor device using the storage device described in the previous embodiment will be described. The storage device described in the previous embodiment can be applied to various removable storage devices such as memory cards (e.g., SD cards), USB memories, and SSDs (solid-state drives). Figures 13A to 13E schematically show several configuration examples of removable storage devices. For example, the storage device described in the previous embodiment is processed into a packaged memory chip and used in various storage devices and removable memories.

[0200] 13A is a schematic diagram of a USB memory. The USB memory 1100 has a housing 1101, a cap 1102, a USB connector 1103, and a board 1104. The board 1104 is housed in the housing 1101. For example, a memory chip 1105 and a controller chip 1106 are attached to the board 1104. The storage device shown in the above embodiment can be incorporated into the memory chip 1105 or the like.

[0201] FIG. 13B is a schematic diagram of the appearance of an SD card, and FIG. 13C is a schematic diagram of the internal structure of the SD card. The SD card 1110 has a housing 1111, a connector 1112, and a substrate 1113. The substrate 1113 is housed in the housing 1111. For example, a memory chip 1114 and a controller chip 1115 are attached to the substrate 1113. The capacity of the SD card 1110 can be increased by providing a memory chip 1114 on the back side of the substrate 1113. A wireless chip with wireless communication capabilities may also be provided on the substrate 1113. This makes it possible to read and write data from and to the memory chip 1114 through wireless communication between a host device and the SD card 1110. The memory device described in the above embodiments can be incorporated into the memory chip 1114 or the like.

[0202] FIG. 13D is a schematic diagram of the appearance of an SSD, and FIG. 13E is a schematic diagram of the internal structure of the SSD. SSD 1150 has a housing 1151, a connector 1152, and a board 1153. Board 1153 is housed in housing 1151. For example, memory chips 1154, 1155, and a controller chip 1156 are attached to board 1153. Memory chip 1155 is a work memory for controller chip 1156, and may be, for example, a DOSRAM chip. The capacity of SSD 1150 can be increased by providing a memory chip 1154 on the back side of board 1153. The storage devices shown in the previous embodiments can be incorporated into memory chip 1154, etc.

[0203] This embodiment mode can be implemented in appropriate combination with any of the structures described in other embodiment modes.

[0204] (Embodiment 3) In this embodiment, an information processing system in which a host device 200 and a storage device 100 are combined will be described.

[0205] <Example of information processing system configuration>

[0206] 14 is a block diagram showing an example of the configuration of an information processing system. The information processing system 1200 includes a storage device 1201 and a host device 1202. The storage device 1201 can be the storage device 100 described in the above embodiment. The host device 1202 corresponds to the host device 200 described in the above embodiment.

[0207] The storage device 1201 is used as, for example, a storage device for the host device 1202, and has the function of storing various types of data such as programs, video data, and audio data.

[0208] The host device 1202 includes a logic unit 1210 , a display device 1221 , and an input device 1222 .

[0209] The logic unit 1210 has a function of controlling the entire host device 1202. The logic unit 1210 has a processor 1211, a memory unit 1212, an interface 1213, and a bus 1214. The processor 1211, the memory unit 1212, and the interface 1213 are interconnected via the bus 1214. The processor 1211 functions as an arithmetic unit and a control unit, and has a function of controlling the overall operation of various devices within the host device 1202 in accordance with programs such as firmware. A CPU, a microprocessor (MPU), or the like can be used as the processor 1211. The memory unit 1212 has a function of storing programs executed by the processor 1211, data processed by the processor 1211, etc.

[0210] The logic unit 1210 communicates with the display device 1221, the input device 1222, and the storage device 1201 via the interface 1213. For example, an input signal from the input device 1222 is transmitted to the logic unit 1210 via the interface 1213 and the bus 1214.

[0211] The display device 1221 is provided as an output device and constitutes a display unit of the information processing system 1200. The host device 1202 may also include other output devices such as a speaker, a printer, etc. in addition to the display device 1221. Alternatively, the host device 1202 may not have the display device 1221.

[0212] The input device 1222 is a device for inputting data to the logic unit 1210. A user can operate the information processing system 1200 by operating the input device 1222. Various human interfaces can be used for the input device 1222, and multiple input devices 1222 can be provided in the information processing system 1200.

[0213] The input device 1222 may be a touch sensor, a keyboard, a mouse, an operation button, a microphone (voice input device), a camera (image capture system), etc. In addition, a device for detecting voice, line of sight, gesture, etc. may be incorporated into the host device 1202 to operate the information processing system 1200. For example, when a touch sensor is provided as the input device 1222, the touch sensor may be incorporated into the display device 1221.

[0214] The information processing system 1200 may be configured such that the storage device 1201 and the host device 1202 are housed in a single housing, or may be configured such that the storage device 1201 and the host device 1202 are connected by wire or wirelessly. For example, the former configuration includes a notebook PC (personal computer), a tablet information terminal, an e-book reader, a smartphone, a mobile phone, an audio terminal, a recording and playback device, etc. The latter configuration includes a set of a desktop PC, a keyboard, a mouse, and a monitor. Other examples include an AV (audio-visual) system including a recording and playback device, audio equipment (speakers, amplifiers, etc.), and a television device, and a surveillance system including a surveillance camera, a display device, and a recording and playback device.

[0215] By using a memory device or a semiconductor device according to one embodiment of the present invention, a data processing system with improved operation speed and reduced power consumption can be realized.

[0216] This embodiment mode can be implemented in appropriate combination with any of the structures described in other embodiment modes.

[0217] (Fourth embodiment) 15A to 15G illustrate examples of electronic devices equipped with a memory device according to one embodiment of the present invention.

[0218] <Electronic devices and systems> A storage device according to one embodiment of the present invention can be installed in various electronic devices. Examples of the electronic devices include information terminals, computers, smartphones, e-book readers, televisions, digital signage, large game machines such as pachinko machines, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, recording and playback devices, navigation systems, and audio playback devices. Note that the term "computer" as used herein includes tablet computers, notebook computers, desktop computers, and large computers such as server systems.

[0219] The electronic device of one embodiment of the present invention may include an antenna. By receiving a signal through the antenna, images, information, and the like can be displayed on a display portion. When the electronic device includes an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0220] An electronic device according to one embodiment of the present invention may have a sensor (including a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0221] The electronic device of one embodiment of the present invention can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display portion, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, etc.

[0222] [Information terminal] A memory device for storing programs of a microcontroller can be formed using a memory device according to one embodiment of the present invention. Therefore, according to one embodiment of the present invention, an information terminal with improved operating speed and reduced power consumption can be realized.

[0223] 15A illustrates a mobile phone (smartphone), which is one type of information terminal. The information terminal 5100 includes a housing 5101 and a display portion 5102. As input interfaces, a touch panel is provided on the display portion 5102 and buttons are provided on the housing 5101. A storage device according to one embodiment of the present invention may be used for storage of the mobile phone.

[0224] 15B illustrates a notebook information terminal 5200. The notebook information terminal 5200 includes a main body 5201 of the information terminal, a display portion 5202, and a keyboard 5203. A storage device according to one embodiment of the present invention may be used for storage of the notebook information terminal.

[0225] 15A and 15B, a smartphone and a notebook type information terminal are used as examples of electronic devices, but information terminals other than smartphones and notebook type information terminals can also be used. Examples of information terminals other than smartphones and notebook type information terminals include PDAs (Personal Digital Assistants), desktop type information terminals, and workstations.

[0226] [Game consoles] FIG. 15C illustrates a portable game console 5300, which is an example of a game console. The portable game console 5300 includes a housing 5301, a housing 5302, a housing 5303, a display unit 5304, a connection unit 5305, operation keys 5306, and the like. The housings 5302 and 5303 can be detached from the housing 5301. By attaching the connection unit 5305 of the housing 5301 to another housing (not shown), the video displayed on the display unit 5304 can be output to another video device (not shown). In this case, the housings 5302 and 5303 can each function as an operation unit. This allows multiple players to play a game simultaneously. A memory device according to one embodiment of the present invention can be incorporated into chips or the like provided on the substrates of the housings 5301, 5302, and 5303.

[0227] 15D shows an example of a game machine, a stationary game machine 5400. A controller 5402 is connected to the stationary game machine 5400 wirelessly or via a wire.

[0228] A storage device according to one embodiment of the present invention may be used in a game console such as a portable game console 5300 or a stationary game console 5400 .

[0229] 15C and 15D illustrate a portable game machine and a stationary game machine as examples of game machines, but game machines to which the microcontroller of one embodiment of the present invention is applied are not limited to these. Examples of game machines to which the microcontroller of one embodiment of the present invention is applied include arcade game machines installed in entertainment facilities (game centers, amusement parks, etc.) and pitching machines for batting practice installed in sports facilities.

[0230] [Mainframe Computer] A storage device or the like according to one embodiment of the present invention can be applied to a large-scale computer.

[0231] 15E is a diagram showing a supercomputer 5500, which is an example of a mainframe computer. FIG. 15F is a diagram showing a rack-mounted computer 5502 included in the supercomputer 5500.

[0232] The supercomputer 5500 includes a rack 5501 and a plurality of rack-mounted computers 5502. The plurality of computers 5502 are stored in the rack 5501. The computer 5502 is provided with a plurality of boards 5504, and a microcontroller according to one embodiment of the present invention can be mounted on the board. A storage device according to one embodiment of the present invention may be used for storage of the large-scale computer.

[0233] 15E and 15F illustrate a supercomputer as an example of a mainframe computer, but the mainframe computer according to one embodiment of the present invention is not limited to this. Examples of the mainframe computer according to one embodiment of the present invention include a computer (server) that provides a service, a large general-purpose computer (mainframe), etc.

[0234] [electric appliances] 15G shows an example of an electric appliance, an electric refrigerator-freezer 5800. The electric refrigerator-freezer 5800 includes a housing 5801, a refrigerator door 5802, a freezer door 5803, and the like.

[0235] A storage device or the like according to one embodiment of the present invention can also be applied to an electric refrigerator-freezer 5800. Other examples of the electric appliances include vacuum cleaners, microwave ovens, electric ovens, rice cookers, water heaters, induction cookers, water dispensers, air conditioners and other air conditioners, washing machines, dryers, and audiovisual devices.

[0236] By using a memory device according to one embodiment of the present invention, an electronic device with improved operation speed and reduced power consumption can be realized.

[0237] This embodiment mode can be implemented in appropriate combination with any of the structures described in other embodiment modes. [Explanation of symbols]

[0238] 100: storage device, 110: memory control unit, 111: input / output unit, 112: control unit, 113: address management unit, 114: free block management unit, 115: ECC management unit, 116: ECC processing unit, 117: firmware storage unit, 118: work memory, 120: memory unit, 121: memory block, 130: memory cell, 133: logical address conversion table, 134: free block management table, 135: ECC management table, 139: memory string, 140: logical address, 141: index information, 142: intra-block offset information, 143: physical address, 151: memory cell, 152: FTJ element, 200: host device

Claims

1. a memory control unit having an input / output unit, a control unit, and a first management unit; a memory unit having a plurality of memory blocks; A storage device having: the first management unit has a plurality of first storage elements, The control unit using a first management table stored in the plurality of first storage elements, a function of converting an address input via the input / output unit into an address of the memory block corresponding to the address; each of the plurality of first memory elements includes a first transistor, a second transistor, and a first capacitance element; the first capacitive element has a ferroelectric layer; one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; one of a source and a drain of the first transistor is electrically connected to a first electrode of the first capacitor; the first transistor has a back gate; The second transistor does not have a back gate.

2. In claim 1, the memory control unit has a second management unit, the second management unit has a plurality of second memory elements, The control unit using a second management table stored in the plurality of second storage elements, a function of selecting a memory block to which data can be written from among the plurality of memory blocks; each of the plurality of second memory elements includes a third transistor, a fourth transistor, and a second capacitance element; the second capacitive element has a ferroelectric layer; one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor; one of a source and a drain of the first transistor is electrically connected to a first electrode of the second capacitor; the first transistor has a back gate; The second transistor does not have a back gate.

3. In claim 1 or claim 2, the memory control unit has a third management unit, the third management unit has a plurality of third memory elements, The control unit using a third management table stored in the plurality of third storage elements, It has a function to determine whether error correction is necessary when reading data, The memory device, wherein each of the plurality of third memory elements includes a ferroelectric material.

4. In any one of claims 1 to 3, each of the plurality of memory blocks has a plurality of memory elements; The storage device wherein each of the plurality of storage elements is a NAND type.

5. In any one of claims 1 to 4, The ferroelectric layer includes one or both of hafnium and zirconium.

6. In any one of claims 1 to 5, The hydrogen concentration in the ferroelectric layer is 5×10 ２０ atoms / cm ３ A storage device that is:

7. In any one of claims 1 to 6, The carbon concentration in the ferroelectric layer is 5×10 １９ atoms / cm ３ A storage device that is:

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