Semiconductor device and circuit device

Abstract

To improve performance of a semiconductor device, and to reduce a loss of a circuit device including a semiconductor device as a switch.SOLUTION: A semiconductor device 100 comprises: a semiconductor chip CHP1 including a p-type MOSFET (1Q) and a parasitic diode (D1); and a semiconductor chip CHP2 including an n-type MOSFET (2Q) and a parasitic diode (D2). On a front face TS1 of the semiconductor chip CHP1, a source electrode SE1 and a gate wire GW1 are formed. On a rear face BS1 of the semiconductor chip CHP1, a drain electrode DE1 is formed. On a front face TS2 of the semiconductor chip CHP2, a source electrode SE2 and a gate wire (GW2) are formed. On a rear face BS2 of the semiconductor chip CHP2, a drain electrode DE2 is formed. The rear face BS2 and the front face TS1 are opposed to each other so that the drain electrode DE2 and the source electrode SE1 are in contact with each other via a conductive paste 30.SELECTED DRAWING: Figure 7