Solid-state imaging device and electronic device

Abstract

Provided is a solid-state imaging element that is capable of maximizing transfer performance and high saturation. The solid-state imaging element comprises a plurality of unit pixels that are arranged in a two-dimensional array. The plurality of unit pixels each include: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a wiring layer that is disposed on a surface of the photoelectric conversion unit, which is on the opposite side from the surface on the light incident-side, and that has a detection node which detects electric charge accumulated in the photoelectric conversion unit. In at least some of the plurality of unit pixels, the center of the detection node substantially matches the light reception center of the photoelectric conversion unit.

Description

[Technical Field]

[0001] The present disclosure relates to a solid-state imaging device and an electronic device equipped with the solid-state imaging device. [Background technology]

[0002] For example, in Patent Document 1, two pixels, one large and one small, with different areas are arranged within a unit pixel, and a light-reducing section is provided on the small pixel to differentiate the sensitivity. In this way, the amount of charge accumulated in the charge storage section of the photoelectric conversion element of the small pixel is increased more than the area ratio, thereby expanding the dynamic range.

[0003] In this case, the transfer electrode positions (detection node electrode positions) of the large-area pixel and small-area pixel are located at the edge of the unit pixel and the edge of the photoelectric conversion area, and the charges generated by photoelectric conversion during charge detection are transferred toward these edges. Note that these electrode positions are located at a distance of 10% or more of the pixel size from the optical center. In recent years, there has been a demand for in-vehicle cameras with high resolutions that allow the recognition of numbers on signs up to 200 meters away, and frame rates of 60 fps or higher. To achieve this, it is necessary to increase the number of pixels and shorten the horizontal blanking period (readout time), and within this, it is also necessary to make the pixel signal charge transfer time faster. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-163010 Summary of the Invention [Problem to be solved by the invention]

[0005] From the above perspectives, placing the transfer electrodes at the edge of the photoelectric conversion region requires a long time to transfer the generated charges, making it impossible to transfer them within the desired time. This average transfer time is worst-case when the potential is in a gradient-free region, and is expressed as the square of the distance divided by the diffusion coefficient D. Furthermore, if the potential is deepened in an attempt to increase the amount of saturated charge, a potential pocket is created in the potential gradient of the transfer path, making it easier for the charge to become trapped. Although this depends on the height of the pocket and the temperature, it also takes time for the charge to escape from it, so locating the transfer electrodes at the edge is disadvantageous for maximizing saturation and transfer performance.

[0006] Furthermore, in the large and small pixel structure, the structure (shape of the photoelectric conversion region) for creating a potential gradient toward the transfer gate is not symmetrical between the large and small pixels, so transfer failures and transfer time delays due to the asymmetry in the transfer charge movement make it impossible to maintain a constant correlation between the sensitivity ratio between the large and small pixels and the light intensity and wavelength in sensitivity shading.The output of the large and small pixels is ultimately combined by applying a gain to the sensitivity ratio, so the output linearity with respect to the light intensity must be constant.

[0007] The present disclosure has been made in view of the above circumstances, and aims to provide a solid-state imaging device and electronic device that can achieve high saturation and maximize transfer performance. [Means for solving the problem]

[0008] One aspect of the present disclosure is a solid-state imaging element comprising a plurality of unit pixels arranged in a two-dimensional array, each of the plurality of unit pixels comprising a photoelectric conversion unit that photoelectrically converts incident light, and a wiring layer having a detection node that is stacked on the surface opposite the light-incident surface of the photoelectric conversion unit and detects electric charges accumulated in the photoelectric conversion unit, and at least a portion of the plurality of unit pixels is a solid-state imaging element in which the center of the detection node and the light-receiving center of the photoelectric conversion unit approximately coincide.

[0009] Another aspect of the present disclosure is an electronic device comprising a plurality of unit pixels arranged in a two-dimensional array, each of the plurality of unit pixels comprising a photoelectric conversion unit that photoelectrically converts incident light, and a wiring layer having a detection node that is stacked on the surface opposite to the light incident surface of the photoelectric conversion unit and detects electric charges accumulated in the photoelectric conversion unit, and at least a portion of the plurality of unit pixels comprising a solid-state imaging element in which the center of the detection node and the light receiving center of the photoelectric conversion unit approximately coincide. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic configuration diagram illustrating the entire solid-state imaging device according to a first embodiment of the present disclosure. [Figure 2] 1 is a plan view of a pixel region of a solid-state imaging element according to a first embodiment of the present disclosure. [Figure 3] 2 is an equivalent circuit of a unit pixel according to the first embodiment of the present disclosure. [Figure 4] 2 is a plan view showing the arrangement of pixel transistors in a large-area pixel and a small-area pixel according to the first embodiment of the present disclosure. FIG. [Figure 5] 2 is a cross-sectional view taken along arrow AB passing through the large-area pixel according to the first embodiment of the present disclosure in a vertical direction. FIG. [Figure 6] FIG. 10 is a plan view showing the arrangement of pixel transistors in large-area pixels and small-area pixels in a solid-state imaging device according to a second embodiment of the present disclosure. [Figure 7] FIG. 10 is a cross-sectional view taken along the arrow A1-B1 passing through the large-area pixel according to the second embodiment of the present disclosure in the vertical direction. [Figure 8] FIG. 10 is a plan view showing the arrangement of pixel transistors in large-area pixels and small-area pixels in a solid-state imaging device according to a third embodiment of the present disclosure. [Figure 9] FIG. 11 is a cross-sectional view taken along arrow A2-B2 passing through the large-area pixel according to the third embodiment of the present disclosure in the vertical direction. [Figure 10] FIG. 10 is a plan view showing the arrangement of pixel transistors in large-area pixels and small-area pixels in a solid-state imaging device according to a fourth embodiment of the present disclosure. [Figure 11] FIG. 10 is a cross-sectional view taken along arrow A3-B3 passing through a small-area pixel according to a fourth embodiment of the present disclosure in the vertical direction. [Figure 12] FIG. 10 is a circuit diagram showing an equivalent circuit of a unit pixel according to a fifth embodiment of the present disclosure. [Figure 13] FIG. 10 is a plan view showing the arrangement of pixel transistors in a large-area pixel and a small-area pixel according to a fifth embodiment of the present disclosure. [Figure 14] FIG. 11 is a cross-sectional view taken along the arrow A4-B4 passing through the small-area pixel according to the fifth embodiment of the present disclosure in the vertical direction. [Figure 15] FIG. 13 is a cross-sectional view of a small-area pixel according to a sixth embodiment of the present disclosure, cut in the vertical direction. [Figure 16] FIG. 13 is a plan view showing the arrangement of pixel transistors in large-area pixels and small-area pixels in a solid-state imaging device according to a seventh embodiment of the present disclosure. [Figure 17] FIG. 13 is a cross-sectional view taken along arrow A5-B5 passing through the large-area pixel according to the seventh embodiment of the present disclosure in the vertical direction. [Figure 18] FIG. 13 is a plan view showing the arrangement of pixel transistors in large-area pixels and small-area pixels in a solid-state imaging device according to an eighth embodiment of the present disclosure. [Figure 19] FIG. 13 is a cross-sectional view taken along arrow A6-B6 passing through a small-area pixel according to an eighth embodiment of the present disclosure in the vertical direction. [Figure 20] FIG. 13 is a plan view showing the arrangement of pixel transistors in large-area pixels and small-area pixels in a solid-state imaging device according to a ninth embodiment of the present disclosure. [Figure 21] FIG. 13 is a cross-sectional view taken along arrow A7-B7 passing through a large-area pixel and a small-area pixel according to a ninth embodiment of the present disclosure in a vertical direction. [Figure 22] FIG. 22 is a plan view of an RGGB type large-area pixel and a small-area pixel in the tenth embodiment of the present disclosure. [Figure 23] FIG. 22 is a plan view of an RCCB type large-area pixel and a small-area pixel in the tenth embodiment of the present disclosure. [Figure 24]FIG. 22 is a plan view of a RYYCy-type large-area pixel and a small-area pixel in the tenth embodiment of the present disclosure. [Figure 25] FIG. 22 is a plan view of an RCCC type large-area pixel and a small-area pixel in the tenth embodiment of the present disclosure. [Figure 26] FIG. 23 is a plan view of an RGB / BLK type large-area pixel and a small-area pixel in a tenth embodiment of the present disclosure. [Figure 27] FIG. 22 is a plan view of an RGB / IR type large-area pixel and a small-area pixel in a tenth embodiment of the present disclosure. [Figure 28] FIG. 22 is a plan view of an RGB / polarized large-area pixel and a small-area pixel in a tenth embodiment of the present disclosure. [Figure 29] FIG. 22 is a plan view of a large-area pixel and a small-area pixel of an RGB / polarized / IR type in a tenth embodiment of the present disclosure. [Figure 30] FIG. 22 is a schematic configuration diagram of an electronic device according to an eleventh embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings referred to in the following description, identical or similar parts will be designated by identical or similar reference numerals, and redundant description will be omitted. However, it should be noted that the drawings are schematic, and the relationship between thickness and planar dimensions, the thickness ratio of each device and each component, etc., may differ from the actual ones. Therefore, specific thicknesses and dimensions should be determined with reference to the following description. Furthermore, it goes without saying that the drawings may include parts with different dimensional relationships and ratios.

[0012] In this specification, the "first conductivity type" refers to either p-type or n-type, and the "second conductivity type" refers to either p-type or n-type, which is different from the "first conductivity type." Furthermore, the "+" or "-" attached to "n" or "p" means that the semiconductor region has a relatively high or low impurity density, respectively, compared to a semiconductor region without the "+" or "-" attached. However, even if the semiconductor region has the same "n" and "n" attached, this does not mean that the impurity density of each semiconductor region is strictly the same.

[0013] Furthermore, the definitions of directions such as up and down in the following explanation are merely for the convenience of explanation and do not limit the technical idea of ​​the present disclosure. For example, if an object is rotated 90 degrees and observed, up and down are converted to left and right and read as such, and if an object is rotated 180 degrees and observed, up and down are obviously read as reversed. The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0014] First Embodiment (Overall configuration of solid-state imaging device) A solid-state imaging device 1 according to a first embodiment of the present disclosure will be described below. Fig. 1 is a schematic configuration diagram showing the entire solid-state imaging device 1 according to the first embodiment of the present disclosure.

[0015] The solid-state imaging device 1 in Figure 1 is a back-illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor. The solid-state imaging device 1 captures image light from a subject through an optical lens, converts the amount of incident light focused on the imaging surface into an electrical signal on a pixel-by-pixel basis, and outputs the signal as a pixel signal. As shown in FIG. 1, the solid-state imaging element 1 of the first embodiment includes a substrate 2, a pixel region 3, a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, and a control circuit 8.

[0016] The pixel region 3 has a plurality of unit pixels 9 regularly arranged in a two-dimensional array on the substrate 2. The unit pixels 9 include large-area pixels 91 and small-area pixels 92 shown in FIG. The vertical drive circuit 4 is configured with, for example, a shift register, selects a desired pixel drive wiring 10, supplies a pulse to the selected pixel drive wiring 10 for driving the unit pixels 9, and drives each unit pixel 9 row by row. That is, the vertical drive circuit 4 sequentially selects and scans each unit pixel 9 in the pixel region 3 row by row in the vertical direction, and supplies a pixel signal based on a signal charge generated in the photoelectric conversion portion of each unit pixel 9 according to the amount of received light to the column signal processing circuit 5 through the vertical signal line 11.

[0017] The column signal processing circuit 5 is arranged, for example, for each column of unit pixels 9, and performs signal processing such as noise removal for each pixel column on signals output from one row of unit pixels 9. For example, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) and AD (Analog-Digital) conversion to remove fixed pattern noise specific to the pixel. The horizontal drive circuit 6 is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to the column signal processing circuits 5, selecting each of the column signal processing circuits 5 in turn, and causing each of the column signal processing circuits 5 to output pixel signals that have undergone signal processing to the horizontal signal line 12.

[0018] The output circuit 7 processes and outputs pixel signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 12. The signal processing may include, for example, buffering, black level adjustment, column variation correction, and various types of digital signal processing. Based on the vertical synchronization signal, horizontal synchronization signal, and master clock signal, the control circuit 8 generates clock signals and control signals that serve as references for the operations of the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc. Then, the control circuit 8 outputs the generated clock signals and control signals to the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc.

[0019] Fig. 2 shows a plan view of the pixel region 3 of the solid-state imaging device 1 shown in Fig. 1. As shown in Fig. 2, the unit pixel 9 has a subpixel structure composed of large-area pixels 91 and small-area pixels 92, and a plurality of large-area pixels 91 and small-area pixels 92 are arranged in a mosaic pattern. In Fig. 2, the large-area pixels 91 for red are labeled with the letter "R," the large-area pixels 91 for blue are labeled with the letter "B," and the large-area pixels 91 for green are labeled with the letter "G." Note that the arrangement pattern of the large-area pixels 91 and small-area pixels 92 is not limited to that shown in Fig. 2, and various arrangement patterns can be adopted.

[0020] 2 illustrates an example in which large-area pixels 91 and small-area pixels 92 are arranged at equal pitches in the row and column directions. The large-area pixels 91 and small-area pixels 92 are electrically isolated from each other by inter-pixel light-shielding portions (RDTIs) 31. The RDTIs 31 are formed in a lattice pattern so as to surround each of the large-area pixels 91 and small-area pixels 92.

[0021] (Unit pixel equivalent circuit) FIG. 3 shows an equivalent circuit of the unit pixel 9. The unit pixel 9 includes a photodiode (SP1) 91a for the large-area pixel 91, a photodiode (SP2) 92a for the small-area pixel 92, a transfer transistor (TGL) 93a, conversion efficiency adjustment transistors (FDG, FCG) 93b, 93c, a reset transistor (RST) 93d, an amplification transistor (AMP) 93e, a selection transistor (SEL) 93f, and a charge storage capacitor 93g. The transfer transistor (TGL) 93a, the conversion efficiency adjustment transistors (FDG, FCG) 93b, 93c, the reset transistor (RST) 93d, the amplification transistor 93e, and the selection transistor (SEL) 93f are pixel transistors, and are configured, for example, by MOS transistors.

[0022] The photodiode 91a for the large-area pixel 91 constitutes a photoelectric conversion unit that photoelectrically converts incident light. The anode of the photodiode 91a is grounded. The cathode of the photodiode 91a is connected to the source of the transfer transistor 93a. The drain of the transfer transistor 93a is connected to a charge storage section 93h formed of a floating diffusion region. The transfer transistor 93a transfers charges from the photodiode 91a to the charge storage section 93h based on a transfer signal applied to its gate.

[0023] The charge storage section 93h stores the charge transferred from the photodiode 91a via the transfer transistor 93a. The potential of the charge storage section 93h is modulated according to the amount of charge stored in the charge storage section 93h. The charge storage section 93h is connected to the source of the conversion efficiency adjustment transistor 93b. The drain of the conversion efficiency adjustment transistor 93b is connected to the source of the conversion efficiency adjustment transistor 93c and the source of the reset transistor 93d. The conversion efficiency adjustment transistor 93b adjusts the charge conversion efficiency in response to a conversion efficiency adjustment signal applied to its gate.

[0024] On the other hand, the photodiode 92a for the small-area pixel 92 constitutes a photoelectric conversion unit that photoelectrically converts incident light. The anode of the photodiode 92a is grounded. A charge storage capacitor 93g is connected to the cathode of the photodiode 92a. A power supply potential (FC-VDD) is applied to the charge storage capacitor 93g. The cathode of the photodiode 92a and the charge storage capacitor 93g are also connected to the drain of the conversion efficiency adjustment transistor 93c. When the conversion efficiency adjustment transistors 93b and 93c are off, the charge storage capacitor 93g stores the charge generated by the photodiode 92a. When a conversion efficiency adjustment signal is applied to the gates of the conversion efficiency adjustment transistors 93b and 93c, the charge generated by the photodiode 92a and the charge stored in the charge storage capacitor 93g are transferred to the charge storage section 93h.

[0025] A power supply potential (VDD) is applied to the drain of the reset transistor 93d. The reset transistor 93d initializes (resets) the charges stored in the charge storage capacitor 93g and the charge storage capacitor 93h based on a reset signal applied to the gate of the reset transistor 93d. The gate of the amplifier transistor 93e is connected to the drain of the charge storage unit 93h and the transfer transistor 93a. The drain of the amplifier transistor 93e is connected to the source of the selection transistor 93f. A power supply potential (VDD) is applied to the source of the amplifier transistor 93e. The amplifier transistor 93e amplifies the potential of the charge storage unit 93h.

[0026] The drain of the selection transistor 93f is connected to the vertical signal line 11. The selection transistor 93f selects a unit pixel 9 based on a selection signal applied to its gate. When the unit pixel 9 is selected, a pixel signal corresponding to the potential amplified by the amplification transistor 93e is output via the vertical signal line 11.

[0027] (Pixel transistor arrangement) FIG. 4 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92. As shown in FIG. The transfer transistor (TGL) 93a, the conversion efficiency control transistors (FDG, FCG) 93b, 93c, and the reset transistor (RST) 93d are provided on the wiring 21. The amplification transistor (AMP) 93e and the selection transistor (SEL) 93f are provided on the wiring 22. The wiring 21 and the amplification transistor (AMP) 93e are connected by a bonding wire or the like. The wiring 22 and the wiring 23 are electrically isolated from each other.

[0028] (Cross-sectional structure of unit pixel) 5 shows a cross-sectional view taken along the line of arrow AB passing through large-area pixel 91 in FIG. 4. Hereinafter, the surface of each component of solid-state imaging device 1 on the light incident side (lower side in FIG. 5) will be referred to as the "back side," and the surface on the opposite side to the light incident side (upper side in FIG. 5) will be referred to as the "front side." 5, in the large-area pixel 91, a photodiode 91a is formed on a substrate 2. A color filter 41 and an on-chip lens 42 are stacked in this order on the back surface of the substrate 2. Furthermore, a wiring layer 43 is stacked on the front surface of the substrate 2.

[0029] The substrate 2 may be, for example, a semiconductor substrate made of silicon (Si). The photodiode 91a is configured by a pn junction between an n-type semiconductor region 91a1 and a p-type semiconductor region 91a2 formed on the front surface side of the substrate 2. In the photodiode 91a, a signal charge corresponding to the amount of light incident through the n-type semiconductor region 2a is generated, and the generated signal charge is accumulated in the n-type semiconductor region 91a1. Furthermore, electrons that cause dark current generated at the interface of the substrate 2 are absorbed by holes, which are majority carriers in the p-type semiconductor region 2b formed in the depth direction from the back surface side of the substrate 2 and the p-type semiconductor region 2c formed on the front surface, thereby suppressing the dark current.

[0030] Furthermore, the large-area pixels 91 are electrically isolated by the RDTI 31 formed in the p-type semiconductor region 2b. As shown in Fig. 5, the RDTI 31 is formed in the depth direction from the rear surface side of the substrate 2. An insulating film is embedded in the RDTI 31 to improve light-blocking performance. The on-chip lens 42 condenses the irradiated light and allows the condensed light to efficiently enter the photodiode 91a in the substrate 2 via the color filter 41. The on-chip lens 42 can be made of an insulating material that does not have light absorption properties.

[0031] The color filter 41 is formed to correspond to the wavelength of light that is desired to be received by each unit pixel 9. The color filter 41 transmits light of an arbitrary wavelength and causes the transmitted light to be incident on the photodiode 91a in the substrate 2. The wiring layer 43 is formed on the surface side of the substrate 2, and is configured to include pixel transistors (only the transfer transistor 93a, the conversion efficiency adjustment transistor 93b, and the reset transistor 93d are shown in FIG. 5) and wirings 21 and 23. In addition, the wiring layer 43 has a charge accumulation section 93h configured as a floating diffusion region.

[0032] In the solid-state imaging device 1 having the above configuration, light is irradiated from the back surface side of the substrate 2, the irradiated light passes through the on-chip lens 42 and the color filter 41, and the transmitted light is photoelectrically converted by the photodiode 91a to generate signal charges. The generated signal charges are then output as pixel signals via pixel transistors formed in the wiring layer 43 and the vertical signal lines 11 formed by the wirings 21, 22, and 23 shown in FIG. 1.

[0033] In the first embodiment, the charge storage capacitor 93g is not provided with a storage layer inside the substrate 2, but is arranged in the wiring layer 43. The boundaries of the stacked layers are separated by implanting a high concentration of p-type ions. This makes it possible to maximize the photoelectric conversion area compared to a planar layout arrangement.

[0034] In the first embodiment, the light receiving center of the large area pixel 91 is the center of the area surrounded by the RDTI 31. The detection node center is the center of the gate electrode of the transfer transistor 93 a. The detection node is a node that detects the charge accumulated in the photodiode 91 a. At this time, the light receiving center position and the detection node center position are approximately aligned. Here, "approximate alignment" is intended to include not only a perfect alignment between the normal passing through the center of the light receiving surface of the large area pixel 91 and the normal passing through the detection node center, but also a state where they are recognized as substantially aligned. A degree of misalignment that does not affect the precision of uniformity is acceptable. For example, a range of 10% of the pixel size can be called "approximate alignment." For example, if the pixel size is 3 μm, the detection node center can be called "approximate alignment" if it is located within a distance of 0.3 μm from the light receiving center.

[0035] In order to provide an FD (floating diffusion) region and pixel transistors, etc. adjacent to the transfer gate electrode of the transfer transistor 93a located in the center, it is necessary to provide a concentrated p-type semiconductor region 2c to separate the n-type semiconductor region 2a of the photoelectric conversion region below it from the n-type semiconductor region 2d of the FD diffusion layer. This means that it is essential to locate the FD diffusion layer near the center, regardless of whether or not there is an FC capacitance.

[0036] <Effects of the First Embodiment> As described above, according to the first embodiment, the electric charges generated by photoelectric conversion by the photodiode 91a drift and are transferred when an electric field equivalent to the power supply voltage is applied near the transfer transistor 93a the moment the transfer transistor 93a serving as the detection node is turned on. As a result, the position of the gate electrode of the transfer transistor 93a is aligned with the light-receiving center of the photodiode 91a, enabling efficient transfer in the shortest possible time.

[0037] Furthermore, according to the first embodiment, the region where the potential is deepest is the center of the photoelectric conversion region, i.e., directly below the gate electrode of the transfer transistor 93 a. Since it is only necessary to move substantially vertically from this deep point, without moving horizontally, pockets are unlikely to form in the potential gradient. Therefore, according to the first embodiment, by aligning the light receiving center and the transfer center, high saturation and maximum transfer performance can be achieved, and further, in a large and small pixel structure, sensitivity shading can be suppressed, coloring can be reduced, and a high S / N ratio can be achieved.

[0038] <Second embodiment> Next, a second embodiment will be described, which is a modification of the first embodiment.

[0039] 6 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92 in a solid-state imaging device 1A according to the second embodiment. In FIG. 6, the same parts as those in FIG. 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the second embodiment, a planar type transfer transistor 93a1 is used instead.

[0040] (Cross-sectional structure of unit pixel) Fig. 7 shows a cross-sectional view taken along arrow A1-B1 passing through large-area pixel 91 in Fig. 6 in the vertical direction. In Fig. 7, the same parts as those in Fig. 5 are designated by the same reference numerals, and detailed description thereof will be omitted. In the second embodiment, the center of the detection node is the center of the gate electrode of the planar transfer transistor 93a1. At this time, the light receiving center position and the detection node center position are more closely aligned than in the first embodiment.

[0041] <Effects of the second embodiment> As described above, according to the second embodiment, the center of the gate electrode of the transfer transistor 93a1 also coincides with the light-receiving center of the photodiode 91a, thereby enabling the transfer time to be reduced.

[0042] <Third embodiment> Next, a third embodiment will be described, which is a modification of the first embodiment. 8 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92 in a solid-state imaging device 1B according to the third embodiment. In Fig. 8, the same parts as those in Fig. 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the third embodiment, the transfer transistor 93a2 is replaced with a vertical transistor.

[0043] (Cross-sectional structure of unit pixel) Fig. 9 shows a cross-sectional view taken along arrow A2-B2 passing through large-area pixel 91 in Fig. 8 in the vertical direction. In Fig. 9, the same parts as those in Fig. 5 are designated by the same reference numerals, and detailed description thereof will be omitted. In the third embodiment, the center of the detection node is the center of the gate electrode of the vertical transfer transistor 93a2. At this time, the light receiving center position and the detection node center position are more closely aligned than in the first embodiment.

[0044] <Effects of the third embodiment> As described above, according to the third embodiment, the center of the gate electrode of the transfer transistor 93a2 remains aligned with the light receiving center of the photodiode 91a, and transfer in the depth direction becomes easier, thereby shortening the transfer time.

[0045] <Fourth embodiment> Next, a fourth embodiment will be described, which is a modification of the first embodiment. 10 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92 in a solid-state imaging device 1C according to the fourth embodiment. In Fig. 10, the same parts as those in Fig. 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the fourth embodiment, in a small-area pixel 92, the center of the detection node is of a direct connection type that makes direct contact with the diffusion layer.

[0046] (Cross-sectional structure of unit pixel) Fig. 11 shows a cross-sectional view taken along arrow A3-B3 passing through the small-area pixel 92 in Fig. 10 in the vertical direction. In Fig. 11, the same parts as those in Fig. 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

[0047] 11, in the small-area pixel 92, a photodiode 92a is formed on a substrate 2. A color filter 61 and an on-chip lens 62 are stacked in this order on the back surface of the substrate 2. Furthermore, a wiring layer 43 is stacked on the front surface of the substrate 2.

[0048] The photodiode 92a is configured by a pn junction between an n-type semiconductor region 92a1 and a p-type semiconductor region 92a2 formed on the front surface side of the substrate 2. In the photodiode 92a, signal charges corresponding to the amount of light incident through the n-type semiconductor region 2e are generated, and the generated signal charges are accumulated in the n-type semiconductor region 92a1. Furthermore, electrons that cause dark current generated at the interface of the substrate 2 are absorbed by holes, which are majority carriers, in a p-type semiconductor region 2f formed in the depth direction from the rear surface side of the substrate 2 and a p-type semiconductor region 2g formed on the front surface, thereby suppressing the dark current.

[0049] The small area pixels 92 are electrically isolated by the RDTI 31 formed in the p-type semiconductor region 2f. As shown in Fig. 11, the RDTI 31 is formed in the depth direction from the rear surface side of the substrate 2. An insulating film is embedded in the RDTI 31 to improve light blocking performance.

[0050] The on-chip lens 62 condenses the irradiated light and makes the condensed light enter the photodiode 92 a in the substrate 2 efficiently via the color filter 61 . The wiring layer 43 is formed on the front surface side of the substrate 2, and is configured to include pixel transistors (only the conversion efficiency adjustment transistor 93b and the amplification transistor 93e are shown in FIG. 11) and wirings 21 and 24.

[0051] In the fourth embodiment, a metal 51 connected to the photodiode 92a as the detection node center is disposed on the wiring layer 43. In this case, the detection node center is a direct connection type that makes direct contact with the diffusion layer. In this way, it is not necessary to use a poly electrode.

[0052] <Effects of the Fourth Embodiment> As described above, according to the fourth embodiment, the center of the detection node coincides with the light receiving center of the photodiode 92a, thereby enabling the transfer time to be reduced.

[0053] <Fifth embodiment> Next, a fifth embodiment will be described. The fifth embodiment is a modification of the first embodiment.

[0054] (Unit pixel equivalent circuit) Fig. 12 shows an equivalent circuit of a unit pixel 9 as a fifth embodiment. In Fig. 12, the same parts as those in Fig. 3 are given the same reference numerals and detailed description thereof will be omitted. In the fifth embodiment, a transfer transistor (TGS) 93i is interposed between a photodiode (SP2) 92a of a small area pixel 92 and a charge storage capacitor (FC) 93g and a conversion efficiency control transistor (FCG) 93c. The source of the transfer transistor 93i is connected to the cathode of the photodiode 92a. The drain of the transfer transistor 93i is connected to a charge storage unit 93j formed of a floating diffusion region. The transfer transistor 93i transfers charges from the photodiode 92a to the charge storage unit 93j based on a transfer signal applied to its gate.

[0055] (Pixel transistor arrangement) FIG. 13 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92 according to the fifth embodiment. The transfer transistor (TGL) 93a, conversion efficiency control transistors (FDG, FCG) 93b, 93c, reset transistor (RST) 93d, and transfer transistor (TGS) 93i are provided on wiring 21. The amplifier transistor (AMP) 93e and selection transistor (SEL) 93f are provided on wiring 22. The wiring 21 and the amplifier transistor (AMP) 93e are connected by a bonding wire or the like. Furthermore, the amplifier transistor (AMP) 93e is also provided on wiring 24.

[0056] (Cross-sectional structure of unit pixel) Fig. 14 shows a cross-sectional view taken along arrow A4-B4 passing through the small-area pixel 92 in Fig. 13 in the vertical direction. In Fig. 14, the same parts as those in Fig. 11 are designated by the same reference numerals, and detailed description thereof will be omitted. In the solid-state imaging device 1D of the fifth embodiment, a transfer transistor (TGS) 93i connected to a photodiode 92a as the center of the detection node is disposed in the wiring layer 43.

[0057] <Effects of the Fifth Embodiment> As described above, according to the fifth embodiment, the gate electrode of the transfer transistor 93i coincides with the light receiving center of the photodiode 92a, thereby shortening the transfer time.

[0058] Sixth Embodiment Next, a sixth embodiment will be described, which is a modification of the fifth embodiment. Fig. 15 is a cross-sectional view of the sixth embodiment taken along the arrow A4-B4 passing through the small-area pixel 92 in Fig. 13 in the vertical direction. In Fig. 15, the same parts as those in Fig. 14 are designated by the same reference numerals, and detailed description thereof will be omitted.

[0059] In the solid-state imaging device 1E of the sixth embodiment, the transfer transistor 93i1 is a vertical VG (Vertigal Gate) transistor. The center of the detection node is the center of the gate electrode of the vertical transfer transistor 93i1. In this case, the light receiving center position and the detection node center position are more closely aligned than in the fifth embodiment.

[0060] <Effects of the Sixth Embodiment> As described above, according to the sixth embodiment, the center of the gate electrode of the transfer transistor 93i1 remains aligned with the light receiving center of the photodiode 92a, and transfer in the depth direction becomes easier, thereby enabling a reduction in transfer time.

[0061] Seventh Embodiment Next, a seventh embodiment will be described. The seventh embodiment is a modification of the first embodiment. 16 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92 in a solid-state imaging device 1F according to the seventh embodiment. In Fig. 16, the same parts as those in Fig. 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the seventh embodiment, the arrow A5-B5 passing through the large area pixel 91 is different from that in the first embodiment.

[0062] (Cross-sectional structure of unit pixel) Fig. 17 shows a cross-sectional view taken along arrow A5-B5 passing through large-area pixel 91 in Fig. 16 in the vertical direction. In Fig. 17, the same parts as those in Fig. 5 are designated by the same reference numerals, and detailed description thereof will be omitted. As shown in Figure 17, the charge storage capacitance section 93g as the pixel internal capacitance is located within the wiring layer 43 on the upper side (back side) of the photoelectric conversion region consisting of the p-type semiconductor region 2c and the n-type semiconductor region 2h, allowing for a layout with more area efficiency than arranging them in a plane.

[0063] Eighth Embodiment Next, an eighth embodiment will be described. The eighth embodiment is a modification of the seventh embodiment. 18 is a plan view showing the arrangement of pixel transistors in a large-area pixel 91 and a small-area pixel 92 in a solid-state imaging device 1G according to the eighth embodiment. In Fig. 18, the same parts as those in Fig. 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the eighth embodiment, the charge storage capacitor 93g is, for example, an MIM (Metal Insulator-Metal) capacitor 71. In this way, the capacitance value can be easily increased by changing the type of insulating film.

[0064] (Cross-sectional structure of unit pixel) Fig. 19 shows a cross-sectional view taken along arrow A6-B6 passing through the small-area pixel 92 in Fig. 18 in the vertical direction. In Fig. 19, the same parts as those in Fig. 11 are designated by the same reference numerals, and detailed description thereof will be omitted. An MIM (Metal-Insulator-Metal) capacitor 71 is connected to the top of the photodiode 92a. In order to provide an FD (Floating Diffusion) region and pixel transistors, etc. adjacent to the transfer gate electrode located in the center, it is necessary to inject a concentrated p-type semiconductor region to separate the n-type semiconductor region of the underlying photoelectric conversion region from the n-type semiconductor region of the FD diffusion layer.

[0065] <Effects of the Eighth Embodiment> As described above, according to the eighth embodiment, the charge storage capacitor 93g as the pixel internal capacitance is the MIM capacitor 71, and the capacitance value can be easily increased by changing the type of insulating film.

[0066] <Ninth embodiment> Next, a ninth embodiment will be described. The ninth embodiment is a modification of the first embodiment. Fig. 20 is a plan view showing the arrangement of pixel transistors in large-area pixels 91 and small-area pixels 92 in a solid-state imaging device 1H according to the ninth embodiment. Fig. 21 shows a cross-sectional view taken along arrows A7-B7 passing through the large-area pixels 91 and small-area pixels 92 in Fig. 20 in the vertical direction. Note that in Fig. 20, the same parts as in Fig. 4 above are designated by the same reference numerals, and detailed descriptions thereof will be omitted. Also, in Fig. 21, the same parts as in Figs. 5 and 11 above are designated by the same reference numerals, and detailed descriptions thereof will be omitted.

[0067] In the ninth embodiment, a large-area pixel 91 includes an n-type semiconductor region 81 and a p-type semiconductor region 82 that is provided to form a p-n junction with the n-type semiconductor region 81. A small-area pixel 92 includes an n-type semiconductor region 84 and a p-type semiconductor region 85 that is provided to form a p-n junction with the n-type semiconductor region 84.

[0068] The depth position 86 of the pn junction of the small-area pixel 92 is located closer to the wiring layer 43 than the depth position 83 of the pn junction of the large-area pixel 91. The depth position 86 of the pn junction of the small-area pixel 92 is located closer to the light incident side than the depth end of the RDTI 31. The depth position of the RDTI 31 is not particularly limited. It may be changed according to the thickness of the silicon, and it may be an FDTI carved from the surface side or a through-hole DTI. Regardless of the DTI, it is sufficient that the depth position 86 of the pn junction forming the small-area pixel 92 is shallower than the depth position 83 of the pn junction of the large-area pixel 91 and deeper than the depth end of the RDTI 31.

[0069] <Effects of the ninth embodiment> As described above, according to the ninth embodiment, for the large-area pixel 91, defect levels occurring at the back-side silicon interface can be pinned by the p-type semiconductor region 82. This makes it possible to suppress dark current. Furthermore, in the small-area pixel 92, in addition to suppressing dark current, even if a further miniaturized resist shape prevents high-energy implantation for deep portions of the n-type semiconductor region 84 from being applied and depletion becomes impossible, as long as the neutral region is at least surrounded by the RDTI 31, it is possible to prevent charge from leaking to the adjacent large-area pixel 91.

[0070] <Tenth embodiment> Next, a tenth embodiment will be described. Figures 22 to 29 are plan views showing the relationship between color filters in the tenth embodiment. Fig. 22 shows a plan view of an RGGB-type large-area pixel 91 and a small-area pixel 92. As shown in Fig. 22, a plurality of large-area pixels 91R, 91Gr, 91B, and 91Gb are arranged in a mosaic pattern. Also, a plurality of small-area pixels 92R, 92Gr, 92B, and 92Gb are arranged in a mosaic pattern. In Fig. 22, the large-area pixel 91R for red is labeled with "R," the large-area pixel 91B for blue is labeled with "B," the large-area pixel 91Gr for green close to red is labeled with "Gr," and the large-area pixel 91Gb for green close to blue is labeled with "Gb."

[0071] The color filter 41 of the large-area pixel 91R is formed to correspond to the wavelength of red light to be received. The color filter 41 of the large-area pixel 91R transmits red light wavelengths and allows the transmitted light to enter the photodiode 91a. The color filters 41 of the large-area pixels 91Gr and 91Gb transmit green light wavelengths and allow the transmitted light to enter the photodiode 91a. The color filter 41 of the large-area pixel 91B transmits blue light wavelengths and allows the transmitted light to enter the photodiode 91a.

[0072] On the other hand, the color filter 61 of the small-area pixel 92R transmits red light wavelengths and allows the transmitted light to enter the photodiode 92a. The color filters 61 of the small-area pixels 92Gr and 92Gb transmit green light wavelengths and allow the transmitted light to enter the photodiode 92a. The color filter 61 of the small-area pixel 92B transmits blue light wavelengths and allows the transmitted light to enter the photodiode 92a.

[0073] Fig. 23 shows a plan view of an RCCB-type large-area pixel 91 and a small-area pixel 92. As shown in Fig. 23, a plurality of large-area pixels 91R, 91C, and 91B are arranged in a mosaic pattern. Also, a plurality of small-area pixels 92R, 92C, and 92B are arranged in a mosaic pattern. The color filter 41 of the large-area pixel 91C is formed to correspond to the wavelength of light that is desired to be received, for example, close to a transparent color. The color filter 61 of the small-area pixel 92C is formed to correspond to the wavelength of light that is desired to be received, for example, close to a transparent color.

[0074] Fig. 24 shows a plan view of an RYYCy-type large-area pixel 91 and a small-area pixel 92. As shown in Fig. 24, a plurality of large-area pixels 91R, 91Y, and 91Cy are arranged in a mosaic pattern. Also, a plurality of small-area pixels 92R, 92Y, and 92Cy are arranged in a mosaic pattern. The color filter 41 of the large-area pixel 91Y is formed to correspond to the wavelength of yellow light that is desired to be received. The color filter 41 of the large-area pixel 91Y transmits the yellow light wavelength and allows the transmitted light to be incident on the photodiode 91a.

[0075] The color filter 41 of the large-area pixel 91Cy is formed to correspond to the wavelength of cyan light to be received. The color filter 41 of the large-area pixel 91Cy transmits the cyan light wavelength and allows the transmitted light to be incident on the photodiode 91a. On the other hand, the color filter 61 of the small-area pixel 92Y is formed to correspond to the wavelength of yellow light that is desired to be received. The color filter 61 of the small-area pixel 92Y transmits the yellow light wavelength and allows the transmitted light to be incident on the photodiode 92a. The color filter 61 of the small-area pixel 92Cy is formed to correspond to the wavelength of cyan light to be received. The color filter 61 of the small-area pixel 92Cy transmits the cyan light wavelength and allows the transmitted light to be incident on the photodiode 92a.

[0076] Fig. 25 shows a plan view of an RCCC-type large-area pixel 91 and a small-area pixel 92. As shown in Fig. 25, a plurality of large-area pixels 91R and 91C are arranged in a mosaic pattern. In addition, a plurality of small-area pixels 92R and 92C are arranged in a mosaic pattern.

[0077] Fig. 26 shows a plan view of an RGB / BLK large-area pixel 91 and a small-area pixel 92. As shown in Fig. 26, a plurality of large-area pixels 91R, 91Gr, 91B, and 91Gb are arranged in a mosaic pattern. In addition, a plurality of small-area pixels 92BLK are arranged in a mosaic pattern. The color filter 61 of the small pixel 92BLK transmits the wavelength of black light and causes the transmitted light to enter the photodiode 92a.

[0078] Fig. 27 shows a plan view of an RGB / IR large-area pixel 91 and a small-area pixel 92. As shown in Fig. 27, a plurality of large-area pixels 91R, 91Gr, 91B, and 91Gb are arranged in a mosaic pattern. Also, a plurality of small-area pixels 92IR are arranged in a mosaic pattern. The color filter 61 of the small area pixel 92IR is formed to correspond to the wavelength of infrared light to be received. The color filter 61 of the small area pixel 92IR transmits the wavelength of infrared light and allows the transmitted light to be incident on the photodiode 92a.

[0079] Fig. 28 shows a plan view of an RGB / polarized large-area pixel 91 and a small-area pixel 92. As shown in Fig. 28, a plurality of large-area pixels 91R, 91Gr, 91B, and 91Gb are arranged in a mosaic pattern. In addition, a plurality of small-area pixels 92P are arranged in a mosaic pattern. The color filter 61 of the small pixel 92P polarizes the light to be received and causes it to enter the photodiode 92a.

[0080] Fig. 29 shows a plan view of an RGB / polarized / IR type large-area pixel 91 and a small-area pixel 92. As shown in Fig. 29, a plurality of large-area pixels 91R, 91Gr, 91B, 91Gb, and 91IR are arranged in a mosaic pattern. In addition, a plurality of small-area pixels 92P are arranged in a mosaic pattern. The color filter 41 of the large-area pixel 91IR is formed to correspond to the wavelength of infrared light to be received. The color filter 41 of the large-area pixel 91IR transmits the infrared light wavelength and allows the transmitted light to be incident on the photodiode 91a. There are no particular restrictions on the colors of the color filters 41 and 61, and any type of color is acceptable. Furthermore, there is no restriction on the combination of colors in the large-area pixels 91 and the small-area pixels 92. For example, the IR and polarized light in the small-area pixels 92 may only be present in a portion of the array arrangement.

[0081] <Other embodiments> As described above, the present technology has been described using the first to tenth embodiments. However, the descriptions and drawings that form part of this disclosure should not be understood to limit the present technology. Upon understanding the gist of the technical content disclosed in the first to tenth embodiments, it will be apparent to those skilled in the art that various alternative embodiments, examples, and operational techniques may be included in the present technology. Furthermore, the configurations disclosed in the first to tenth embodiments may be appropriately combined within a range that does not cause contradictions. For example, configurations disclosed in multiple different embodiments may be combined, or configurations disclosed in multiple different modified examples of the same embodiment may be combined.

[0082] <Applications to electronic devices> Next, an electronic device according to an eleventh embodiment of the present disclosure will be described. Fig. 30 is a schematic configuration diagram of an electronic device 100 according to the eleventh embodiment of the present disclosure. The electronic device 100 according to the eleventh embodiment includes a solid-state imaging element 101, an optical lens 102, a shutter device 103, a drive circuit 104, and a signal processing circuit 105. The electronic device 100 according to the eleventh embodiment illustrates an embodiment in which the solid-state imaging element 101 is the solid-state imaging element 1 according to the first embodiment of the present disclosure, and is used in an electronic device (for example, a camera).

[0083] The optical lens 102 focuses image light (incident light 106) from the subject on the imaging surface of the solid-state imaging element 101. This causes signal charges to accumulate in the solid-state imaging element 101 for a certain period of time. The shutter device 103 controls the light irradiation period and light blocking period for the solid-state imaging element 101. The drive circuit 104 supplies drive signals that control the transfer operation of the solid-state imaging element 101 and the shutter operation of the shutter device 103. The drive signals (timing signals) supplied from the drive circuit 104 cause signal transfer from the solid-state imaging element 101. The signal processing circuit 105 performs various signal processes on signals (pixel signals) output from the solid-state imaging element 101. The processed video signals are stored in a storage medium such as a memory or output to a monitor. With this configuration, the electronic device 100 of the eleventh embodiment can suppress optical color mixing in the solid-state imaging device 101, thereby improving the image quality of the video signal.

[0084] The electronic device 100 to which the solid-state imaging devices 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, and 1H can be applied is not limited to a camera, but can also be applied to other electronic devices. For example, the solid-state imaging devices may be applied to an imaging device such as a camera module for a mobile device such as a mobile phone.

[0085] In addition, in the 11th embodiment, the solid-state imaging elements 101 are configured to be used in electronic devices using the solid-state imaging elements 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, and 1H according to the first to tenth embodiments, but other configurations may also be used.

[0086] The present disclosure can also be configured as follows. (1) A plurality of unit pixels arranged in a two-dimensional array, Each of the plurality of unit pixels is a photoelectric conversion unit that photoelectrically converts incident light; a wiring layer that is stacked on a surface opposite to the light incident surface of the photoelectric conversion unit and has a detection node that detects charges accumulated in the photoelectric conversion unit; Equipped with At least a portion of the plurality of unit pixels The center of the detection node and the light receiving center of the photoelectric conversion unit are substantially aligned. Solid-state imaging element. (2) the plurality of unit pixels are composed of large-area pixels and small-area pixels, Either one or both of the large-area pixels and the small-area pixels are The center of the detection node and the light receiving center of the photoelectric conversion unit are substantially aligned. The solid-state imaging device according to (1) above. (3) The detection node is a planar type. The solid-state imaging device according to (1) or (2) above. (4) The detection node is a vertical transistor The solid-state imaging device according to (1) or (2) above. (5) The detection node is a direct connection type The solid-state imaging device according to (1) or (2) above. (6) The solid-state imaging device according to (1) or (2), wherein the wiring layer has a charge storage section that stores charges generated by the photoelectric conversion section. (7) The solid-state imaging device according to (1) or (2), wherein the wiring layer has pixel transistors that perform signal processing on the charges output from the photoelectric conversion units. (8) The solid-state imaging device according to (1) or (2), wherein the wiring layer has a pixel internal capacitance. (9) The solid-state imaging device according to (8), wherein the pixel internal capacitance is a MIM (Metal-Insulator-Metal) capacitance. (10) the photoelectric conversion unit has a first electrode region of a first conductivity type and a second electrode region of a second conductivity type provided to form a pn junction with the first electrode region; The solid-state imaging device according to (2), wherein the depth position of the pn junction of the small-area pixel is located closer to the wiring layer than the depth position of the pn junction of the large-area pixel. (11) an inter-pixel light shielding section that insulates and shields the small-area pixel and the large-area pixel from each other; The solid-state imaging element according to (10), wherein the depth position of the pn junction of the small-area pixel is located closer to the wiring layer than the depth position of the pn junction of the large-area pixel, and is located closer to the light incidence side than the depth end of the inter-pixel light-shielding portion. (12) The solid-state imaging device according to (1), wherein at least some of the unit pixels are provided with color filters corresponding to different wavelengths of light and provided on the light incident side of the photoelectric conversion section. (13) The solid-state imaging device according to (1), wherein the center of the detection node includes a transfer gate electrode portion for transferring charges accumulated in the photoelectric conversion portion. (14) The solid-state imaging device according to (1), wherein the center of the detection node includes a metal. (15) A plurality of unit pixels arranged in a two-dimensional array, Each of the plurality of unit pixels is a photoelectric conversion unit that photoelectrically converts incident light; a wiring layer that is stacked on a surface opposite to the light incident surface of the photoelectric conversion unit and has a detection node that detects charges accumulated in the photoelectric conversion unit; Equipped with At least a portion of the plurality of unit pixels The center of the detection node and the light receiving center of the photoelectric conversion unit are substantially aligned. Equipped with a solid-state imaging device, electronic equipment. [Explanation of symbols]

[0087] 1A, 1B, 1C, 1E, 1F, 1G, 1H... solid-state imaging element, 2... substrate, 2a, 2d, 2e, 2h, 81, 84, 91a1, 92a1... n-type semiconductor region, 2b, 2c, 2f, 2g, 82, 85, 91a2, 92a2... p-type semiconductor region, 3... pixel region, 4... vertical drive circuit, 5... column signal processing circuit, 6... horizontal drive circuit, 7... output circuit, 8... control circuit, 9... unit pixel, 10... pixel drive wiring, 11... vertical signal line, 12... horizontal signal line, 21, 22, 23, 24... wiring, 41, 61... color filter, 42, 62... on-chip lens, 43... wiring layer, 51... metal, 70... MIM (Metal-Insulator-Metal) capacitor, 86... position, 91... large-area pixel, 91a , 92a... photodiode, 91B, 91C, 91Cy, 91Gr, 91Gb, 91IR, 91R, 91Y... large area pixel, 92, 92B, 92BLK, 92C, 92Cy, 92Gb, 92Gr, 92IR, 92P, 92R, 92Y... small area pixel, 93a, 93a1, 93a2, 93i, 93i1... transfer transistor, 93b, 93c... conversion efficiency adjustment transistor, 93d... reset transistor, 93e... amplification transistor, 93f... selection transistor, 93g... charge storage capacitance section, 93h, 93j... charge storage section, 100... electronic device, 101... solid-state imaging element, 102... optical lens, 103... shutter device, 104... drive circuit, 105... signal processing circuit, 106... incident light

Claims

1. a plurality of unit pixels arranged in a two-dimensional array; Each of the plurality of unit pixels is a photoelectric conversion unit that photoelectrically converts incident light; a wiring layer that is stacked on a surface opposite to the light incident surface of the photoelectric conversion unit and has a detection node that detects charges accumulated in the photoelectric conversion unit; Equipped with At least a portion of the plurality of unit pixels the center of the detection node and the light-receiving center of the photoelectric conversion unit substantially coincide with each other; the plurality of unit pixels are composed of large-area pixels and small-area pixels, Either one or both of the large-area pixels and the small-area pixels are the center of the detection node and the light-receiving center of the photoelectric conversion unit substantially coincide with each other; the photoelectric conversion unit has a first electrode region of a first conductivity type and a second electrode region of a second conductivity type provided to form a pn junction with the first electrode region; a depth position of the pn junction of the small-area pixel is located closer to a wiring layer than a depth position of the pn junction of the large-area pixel; Solid-state imaging element.

2. The detection node is a planar type. The solid-state imaging device according to claim 1 .

3. The detection node is a vertical transistor The solid-state imaging device according to claim 1 .

4. The detection node is a direct connection type The solid-state imaging device according to claim 1 .

5. 2. The solid-state imaging device according to claim 1, wherein the wiring layer includes a charge storage section that stores the charge generated by the photoelectric conversion section.

6. The solid-state imaging device according to claim 1 , wherein the wiring layer includes pixel transistors that perform signal processing on the charges output from the photoelectric conversion units.

7. The solid-state imaging device according to claim 1 , wherein the wiring layer has an internal capacitance of a pixel.

8. 8. The solid-state imaging device according to claim 7, wherein the pixel internal capacitance is a MIM (Metal-Insulator-Metal) capacitance.

9. an inter-pixel light shielding section that insulates and shields the small-area pixel and the large-area pixel from each other; 2. The solid-state imaging device according to claim 1, wherein a depth position of the pn junction of the small-area pixel is located closer to the wiring layer than a depth position of the pn junction of the large-area pixel, and is located closer to the light incident side than a depth end of the inter-pixel light-shielding portion.

10. The solid-state imaging device according to claim 1 , wherein at least some of the plurality of unit pixels include color filters corresponding to different wavelengths of light and provided on the light incident side of the photoelectric conversion section.

11. 2. The solid-state imaging device according to claim 1, wherein a center of the detection node includes a transfer gate electrode portion for transferring charges accumulated in the photoelectric conversion portion.

12. The solid-state imaging device according to claim 1 , wherein the center of the detection node includes a metal.

13. a plurality of unit pixels arranged in a two-dimensional array; Each of the plurality of unit pixels is a photoelectric conversion unit that photoelectrically converts incident light; a wiring layer that is stacked on a surface opposite to the light incident surface of the photoelectric conversion unit and has a detection node that detects charges accumulated in the photoelectric conversion unit; Equipped with At least a portion of the plurality of unit pixels the center of the detection node and the light-receiving center of the photoelectric conversion unit substantially coincide with each other; the plurality of unit pixels are composed of large-area pixels and small-area pixels, Either one or both of the large-area pixels and the small-area pixels are the center of the detection node and the light-receiving center of the photoelectric conversion unit substantially coincide with each other; the photoelectric conversion unit has a first electrode region of a first conductivity type and a second electrode region of a second conductivity type provided to form a pn junction with the first electrode region; a depth position of the pn junction of the small-area pixel is located closer to a wiring layer than a depth position of the pn junction of the large-area pixel; Equipped with a solid-state imaging device, electronic equipment.

Images