Semiconductor light emitting device and semiconductor light emitting module

Abstract

To provide a highly reliable light-emitting device with a high light-blocking characteristic against emission light from a light-emitting element and emission light from a wavelength conversion member without providing an individual covering member on a side surface of the light-emitting element, and provide a highly reliable light-emitting module in which a plurality of light-emitting devices can be disposed closely and in contact, light locking between the light-emitting devices is excellent, and crosstalk is suppressed.SOLUTION: A semiconductor light-emitting device includes a wiring board 12 where a p-electrode and an n-electrode are provided on a base body, a light-emitting function layer 20 including a p-type semiconductor layer and an n-type semiconductor layer connected to the p-electrode and the n-electrode and bonded onto the wiring board, a light-transmitting optical element 50 provided on a side surface of a light-transmitting optical body 51 with a plate shape and including a light-blocking film 55 having an annular frame body part formed on a peripheral part of a back surface of the light-transmitting optical body while covering the peripheral part, and an adhesive layer 35 having the light-transmitting optical element attached onto an upper surface of the wiring board so that the light-emitting function layer is inserted into a concave part inside the frame body part. The concave part is filled with the adhesive layer.SELECTED DRAWING: Figure 1B

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light emitting device and a semiconductor light emitting module, and more particularly to a semiconductor light emitting device and a semiconductor light emitting module having a semiconductor light emitting element such as a light emitting diode (LED). [Background technology]

[0002] In recent years, semiconductor light-emitting elements such as light-emitting diodes (LEDs) have been arranged and used in multiple devices in order to achieve higher output and light distribution control.

[0003] For example, adaptive driving beam (ADB) headlamps are known for their variable light distribution, which controls the light distribution according to the driving environment. Also known are high-power LED packages for lighting and LED packages for information and communication devices with high-density LED arrangements.

[0004] However, in general, in a semiconductor light emitting device in which multiple semiconductor light emitting elements are arranged side by side, a portion of the light emitted from the conductive elements may propagate to the non-conductive elements, and such light leakage and optical crosstalk have been problems in various application fields in which multiple semiconductor light emitting elements are arranged and used.

[0005] For example, Patent Document 1 discloses a semiconductor light-emitting device in which the side surfaces of a substrate and a light-emitting element are covered with a light-reflecting layer formed by atomic layer deposition. Patent Document 2 discloses a light-emitting element having a reflective member covering the side surfaces of a semiconductor laminate, the reflective member having a first insulator film and a second insulator film made of a dielectric multilayer film (DBR).

[0006] Patent Document 3 discloses a light emitting device having a light transmitting member, a light emitting element bonded to the light transmitting member, and a light guiding member extending from the surface of the light emitting element to the surface of the light transmitting member.

[0007] Patent Document 4 discloses a light emitting device having a light emitting element, a light transmitting member, and a covering member that contains a light reflective material and covers at least the side surface of the light transmitting member. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-225862 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-119063 [Patent Document 3] Japanese Patent Application Laid-Open No. 2010-219324 [Patent Document 4] Patent No. 2010-219324 Summary of the Invention [Problem to be solved by the invention]

[0009] In the conventional light emitting devices described above, a coating is provided on the side surfaces of the wavelength conversion member and the light emitting element, or a light guiding member is provided on the side surfaces of the wavelength conversion member and the light emitting element. In such light emitting devices, peeling or cracking can occur in the coating on the side surface of the light emitting element or the coating on the side surface of the joint between the light emitting element and the wavelength conversion member due to heating when the light emitting device is mounted or thermal history in the usage environment.

[0010] The present invention has been made in consideration of these points, and aims to provide a light-emitting device that has high light-blocking properties against light emitted from the light-emitting element and light emitted from the wavelength conversion element, and is highly reliable, without providing a separate covering member on the side surface of the light-emitting element.

[0011] Another object of the present invention is to provide a light emitting module that allows for close-contact mounting and contact mounting of a plurality of light emitting devices, provides excellent light shielding between the light emitting devices, suppresses crosstalk, and is highly reliable. [Means for solving the problem]

[0012] A semiconductor light emitting device according to one embodiment of the present invention comprises: a wiring substrate having a p-electrode and an n-electrode provided on a base; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer; A semiconductor light emitting module according to another embodiment of the present invention includes: A semiconductor light emitting module including a plurality of the semiconductor light emitting devices, The side surfaces of the light-transmitting optical element are provided with the two semiconductor light-emitting devices arranged adjacent to each other.

[0013] A semiconductor light emitting module according to yet another embodiment of the present invention includes: A semiconductor light emitting module including a plurality of the semiconductor light emitting devices, Each connection system has a plurality of series-connected systems each including two of the semiconductor light-emitting devices connected in series, with the side surfaces of the light-transmitting optical elements being arranged adjacent to each other.

[0014] A semiconductor light emitting module according to yet another embodiment of the present invention includes: A semiconductor light emitting module including a plurality of the semiconductor light emitting devices, The four semiconductor light emitting devices are arranged in a 2x2 matrix, with one pair of the semiconductor light emitting devices arranged diagonally opposite to the other pair of the semiconductor light emitting devices arranged diagonally opposite to each other being connected in series to form two series connection systems. [Brief explanation of the drawings]

[0015] [Figure 1A] 1 is a top view schematically showing the top surface of a semiconductor light emitting device 10 according to a first embodiment of the present invention. [Figure 1B] FIG. 1B is a cross-sectional view showing a cross section taken along line AA in FIG. 1A. [Figure 1C] 1B is an exploded cross-sectional view showing the configuration of the semiconductor light-emitting device 10. FIG. [Figure 2] 2 is a plan view schematically showing the back surface of the semiconductor light emitting device 10. FIG. [Figure 3A] 10 is an SEM image showing a cross section of an example of a light-shielding film 55. [Figure 3B] 10 is an enlarged SEM image showing the upper end portion and rim portion 55R of the light-shielding film 55. [Figure 3C] 10 is an SEM image showing a cross section of another example of a light-shielding film 55. [Figure 4A] 10 is a graph showing the film thickness of each layer of the dielectric multilayer film of the light-shielding film 55. [Figure 4B] 10 is a graph showing the wavelength dependency of the reflectance of a light-shielding film 55 having a dielectric multilayer film. [Figure 5A] 1 is a top view showing an example of the structure of an LED 11. FIG. [Figure 5B] FIG. 5B is a cross-sectional view showing a cross section taken along line AA shown in FIG. 5A. [Figure 6A] 1A and 1B are a top view (upper) and a side view (lower) showing a semiconductor light emitting module 60 according to a second embodiment of the present invention. [Figure 6B] 1 is a perspective view showing an example of a mounting form of a semiconductor light emitting module 60. FIG. [Figure 7A] 1A and 1B are a plan view (upper) showing the internal configuration of a semiconductor light emitting module 60, and a cross-sectional view (lower) showing a cross section taken along line AA shown in the plan view. [Figure 7B] 1 is a plan view schematically showing the wiring of two wiring layers (upper and lower layers) of a module substrate 61. FIG. [Figure 8A] 10A and 10B are a top view (upper) and a side view (lower) showing the internal structure of a semiconductor light emitting module 70 according to a third embodiment of the present invention. [Figure 8B]FIG. 8B is a cross-sectional view schematically showing a cross section taken along line AA shown in FIG. 8A. [Figure 9A] FIG. 10 is a top view showing a semiconductor light emitting module 80 according to a fourth embodiment of the present invention. [Figure 9B] 1A and 1B are a plan view (upper) showing the internal structure of a semiconductor light emitting module 80 and a cross-sectional view (lower) showing a cross section taken along line AA shown in the plan view. [Figure 9C] 1 is a plan view schematically showing wiring in an upper surface wiring layer 81A and a buried wiring layer 81B of a module substrate 81. FIG. [Figure 10A] 1 is a diagram schematically showing a connection configuration of semiconductor light emitting devices 10A1 and 10A2. FIG. [Figure 10B] 10 is a diagram schematically showing a connection configuration of semiconductor light emitting devices 10B1 and 10B2. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0016] In the following, preferred embodiments of the present invention will be described, but these may be modified and combined as appropriate. In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals.

[0017] [First embodiment] Fig. 1A is a top view schematically showing the upper surface of a semiconductor light emitting device 10 according to a first embodiment of the present invention. Fig. 1B is a cross-sectional view showing a cross section taken along line AA in Fig. 1A. Fig. 1C is an exploded cross-sectional view corresponding to Fig. 1B and showing the configuration of semiconductor light emitting device 10.

[0018] 1A, 1B, and 1C, a semiconductor light-emitting device 10 includes an LED (light-emitting diode) 11, which is a light-emitting element, and a wavelength conversion element 50, which is a light-transmitting optical element. The wavelength conversion element 50 is bonded onto the LED 11 with a light-transmitting adhesive layer 35.

[0019] 1C, the LED 11 has a wiring substrate (submount) 12 and a light-emitting functional layer 20. The wiring substrate 12 has a support substrate 12A, the light-emitting functional layer 20 formed on the support substrate 12A, an anode 16A, and a cathode 16B. The LED 11 emits light LE. The support substrate 12A is made of, for example, Si (silicon) and is opaque to the light emitted from the LED 11.

[0020] The light-emitting functional layer 20 has a p-type semiconductor, an n-type semiconductor layer, and a light-emitting layer provided between the p-type semiconductor layer and the n-type semiconductor layer. The light-emitting functional layer 20 may have a p-electrode and an n-electrode. For example, a reflective electrode or a reflective layer may be provided on the bottom surface side of the light-emitting functional layer 20. Alternatively, The light-emitting functional layer 20 is The light-emitting functional layer 20 may be bonded to the support substrate 12 by a reflective bonding member. A The anode 16A and the cathode 16B are electrically connected to each other.

[0021] The wavelength conversion element 50 has a plate-shaped wavelength converter 51 and a light-shielding film 55 provided on the side surface of the wavelength converter 51. In this embodiment, the light-shielding film 55 is provided over the entire side surface of the wavelength converter 51. However, the light-shielding film 55 may be provided on at least a part of the side surface of the wavelength converter 51, i.e., on the side surface portion where light is desired to be blocked.

[0022] In the following, the wavelength conversion element 50 will be described as an example of the light-transmitting optical element provided on the LED 11, but the present invention is not limited to this. The present invention can be applied to a light-transmitting optical element 50 having a light-transmitting optical body 51 instead of the wavelength conversion body 51 and a light-shielding film 55 provided on the side surface of the light-transmitting optical body 51.

[0023] In this embodiment, the wavelength conversion element 50 has a rectangular pillar shape. However, the shape of the wavelength conversion element 50 is not limited to this. For example, the wavelength conversion element 50 may have a polygonal pillar shape, a cylindrical shape (including an elongated cylindrical shape), or the like.

[0024] As shown in FIG. 1C, the emitted light LE emitted from the light-emitting functional layer 20 of the LED 11 passes through the adhesive layer 35 and enters the wavelength converter 51 from the rear surface 51B of the wavelength converter 51 (i.e., the surface on the light-emitting functional layer 20 side).

[0025] The emitted light LE of the LED 11 is, for example, blue light. A portion of the emitted light LE of the LED 11 is wavelength-converted to, for example, yellow light when passing through the wavelength converter 51. Then, white light, which is a mixture of the yellow light and the blue light that has passed through the wavelength converter 51, is emitted from the upper surface 51S of the wavelength converter 51 (emitted light LM).

[0026] The light LE emitted from the LED 11 is not limited to blue light, but may be light in the visible light band such as red or green light, or light outside the visible light band such as ultraviolet light or infrared light.

[0027] The light-shielding film 55 is formed so as to cover the peripheral edge of the back surface 51B of the wavelength converter 51, and has a frame portion (hereinafter referred to as a rim portion) 55R protruding from the back surface 51B. That is, the rim portion 55R is formed as a rectangular ring-shaped frame on the peripheral edge of the back surface 51B of the wavelength converter 51.

[0028] 1B, a bottom 55B of the annular rim portion 55R of the light-shielding film 55 is adhered by an adhesive layer 35 so as to contact the upper surface of the wiring substrate 12 of the LED 11. That is, the light-emitting functional layer 20 is inserted into a recess 55S formed inside the rim portion 55R, and the interior of the recess 55S is filled with the adhesive layer 35.

[0029] The rim portion 55R may not be in contact with the upper surface of the wiring substrate 12, and there may be a gap between the bottom portion 55B of the rim portion 55R and the upper surface of the wiring substrate 12. Even in this case, the light-emitting functional layer 20 is embedded in the adhesive layer 35. It is preferable that at least a portion of the rim portion 55R be in contact with the upper surface of the wiring substrate 12. In terms of light-blocking properties, it is most preferable that the entire rim portion 55R be in contact with the upper surface of the wiring substrate 12.

[0030] 2 is a plan view schematically showing the back surface of the semiconductor light emitting device 10. In this embodiment, the wavelength conversion element 50 is provided on the wiring substrate 12 so that three side surfaces thereof protrude beyond the wiring substrate 12.

[0031] In the case of a light-emitting module in which a plurality of semiconductor light-emitting devices 10 are arranged adjacent to or in contact with each other, it is preferable that at least one side or a portion of the side of the wavelength conversion element 50 protrudes beyond the side of the wiring board 12. When the wavelength conversion element 50 has a rectangular pillar shape, it is most preferable that three side surfaces protrude beyond the side of the wiring board 12. For example, the wiring boards 12 of adjacent light-emitting devices 10 are spaced apart by the portions of the wavelength conversion element 50 protruding beyond the side of the board 12, so that they do not short-circuit.

[0032] Fig. 3A is an SEM (scanning electron microscope) image showing a cross section of an example of light-shielding film 55. Fig. 3B is an SEM image showing an enlarged view of the upper end portion and rim portion 55R of light-shielding film 55. Fig. 3C is an SEM image showing a cross section of another example of light-shielding film 55.

[0033] Here, the light-shielding film 55 was formed as a dielectric multilayer film in which Al2O3 films and TiO2 films were alternately stacked. The light-shielding film 55 was formed by atomic layer epitaxy (ALE) using a gas source molecular beam epitaxy (MBE) device. It can also be formed by atomic layer deposition (ALD).

[0034] Figure 4A is a graph showing the thickness of each layer of the dielectric multilayer film of the light-shielding film 55. A thick layer (200 nm) was formed as a base layer, and Al2O3 films (Aj: j = 1, 2, ...) and TiO2 films (Bj: j = 1, 2, ...) that function as reflective films were alternately stacked on top of it to form a dielectric multilayer film. The thicknesses of the Al2O3 films and TiO2 films were varied to minimize the angle dependence of the light-shielding characteristics in the wavelength range of light incident on the light-shielding film 55. In other words, a multilayer film was used that included Al2O3 films and TiO2 films whose thicknesses were modulated to correspond to a thickness corresponding to λ / 4 (λ: wavelength within the medium). The total thickness of the light-shielding film 55 was 4.7 μm.

[0035] 4B shows the results of calculating the wavelength dependency of the reflectance of the light-shielding film 55 having the above-described dielectric multilayer film, using the angle of incidence of light as a parameter. It can be seen that in the visible light band, a high reflectance with little angle dependency can be obtained.

[0036] The light-shielding film 55 may be a dielectric multilayer film in which Al2O3 films and TiO2 films each having a thickness corresponding to λ / 4 are alternately stacked.

[0037] 3A, it can be seen that the light-shielding film 55 having a flat and uniform layer structure is firmly attached to the flat side surface of the wavelength converter 51. Furthermore, as shown in FIG. 3B, it was confirmed that the light-shielding film 55 also has a flat and uniform layer structure at the upper end of the light-shielding film 55. It was also confirmed that the light-shielding film 55 is formed on the peripheral edge of the bottom surface of the wavelength converter 51, and that a rim portion 55R made of a multilayer film is formed at the lower end of the light-shielding film 55.

[0038] FIG. 3C is an SEM image showing a cross section of another example of light-shielding film 55. As in FIG. 3B, Figure 3C shows Enlarged SEM image of the upper end and rim portion 55R of the light-shielding film 55 of Show deathIn the light-shielding film 55 of this other example, the side surface of the wavelength converter 51 has wavy irregularities, and the flatness of the side surface is lower than that of the wavelength converter 51 shown in FIG. 3B. However, it can be seen that the light-shielding film 55 is firmly attached to the side surface of the wavelength converter 51. The light-shielding film 55 is The light-shielding film 55 functions satisfactorily even if there is some undulation in the layer structure of the light-shielding film 55. Furthermore, it was confirmed that the light-shielding film 55 has a rim portion 55R made of a multilayer film at its lower end.

[0039] With this configuration, of the light emitted from the light-emitting functional layer 20 of the LED 11, light emitted in the side direction (lateral direction) of the light-emitting functional layer 20 is blocked by the rim portion 55R and prevented from emitting to the outside. In addition, light guided inside the wavelength converter 51 is also blocked by the light-shielding film 55. Therefore, in the semiconductor light-emitting device 10, light is emitted only from the upper surface 51S of the wavelength converter 51 (emitted light LM).

[0040] The light-emitting functional layer 20 is protected by the wiring substrate 12 and the wavelength conversion element 50. The light-emitting functional layer 20 is hermetically sealed by the adhesive layer .

[0041] The light-shielding film 55 can be formed of, for example, a dielectric multilayer film or a light-shielding ceramic film. The dielectric multilayer film used for the light-shielding film 55 can be, for example, a multilayer film made of two or more of Al2O3, TiO2, SiO2, Ta2O5, and Nb2O5, but is not limited to this, and a light-shielding or reflective multilayer film in which various films are alternately stacked can be used.

[0042] Alternatively, when a ceramic film is used as the light-shielding film 55, a film made of alumina, zirconia, aluminum nitride, or silicon nitride can be used.

[0043] Furthermore, alumina, glass, aluminum garnet, etc. can be used as the base material of the wavelength converter 51, and YAG:Ce, GYAG:Ce, LuAG:Ce, α-sialon, β-sialon, CASN, SCASN, etc. can be used as the phosphor.

[0044] As described above, in the semiconductor light-emitting device 10, the wavelength conversion element 50, which is slightly larger than the light-emitting functional layer 20, is bonded onto the LED 11. In addition, electrodes for supplying power to the LED 11 are provided on the upper and / or lower surfaces of the support substrate 12A. Therefore, it is possible to realize a semiconductor light-emitting device 10 that is slightly larger than the wavelength conversion element 50 and has high light-blocking properties that prevent light from radiating sideways.

[0045] [LED11 structure] FIG. 5A is a top view showing an example of the structure of the LED 11, and FIG. 5B is a cross-sectional view showing a cross section taken along line AA shown in FIG. 5A.

[0046] A so-called thin-film LED layer is used for the light-emitting functional layer 20. More specifically, the light-emitting functional layer 20 has a configuration in which a semiconductor laminate (thin-film LED) having an LED structure epitaxially grown on a growth substrate is removed from the growth substrate. The removed light-emitting functional layer 20 is bonded to the wiring substrate 12.

[0047] More specifically, the light-emitting functional layer 20 has an n-type semiconductor layer 21, a light-emitting layer 22, and a p-type semiconductor layer 23. The light-emitting functional layer 20 also has a reflective p-electrode 25A provided on the p-type semiconductor layer 23, and an n-electrode 25B provided on the n-type semiconductor layer 21.

[0048] The reflective p-electrode 25A is formed by, for example, a transparent conductive film of ITO (indium tin oxide), Ni (nickel), Pt (platinum) and Ag (silver) reflective film, which is formed on the p-type semiconductor layer 2. 3For example, an ITO / Ni / Pt / Ag layer formed in this order on the n-type semiconductor layer 21 can be used. For the n-electrode 25B, a Ti / Au layer formed in this order on the n-type semiconductor layer 21 can be used.

[0049] The materials and structures of the p-electrode 25A and the n-electrode 25B are not limited to those described above, and may be selected appropriately taking into consideration characteristics such as improvement in extraction efficiency by light reflection, ohmic characteristics, device reliability, and lifespan.

[0050] The light-emitting functional layer 20 has a via 26V in the center thereof, which extends from the surface of the p-type semiconductor layer 23 to the inside of the n-type semiconductor layer 21. The n-electrode 25B is exposed to the via 26V. n The via 26V is provided on the mold semiconductor layer 21. The inner wall of the via 26V and the side surface of the light-emitting function layer 20 are covered with a protective film 27.

[0051] Each of the n-type semiconductor layer 21 and the p-type semiconductor layer 23 is made up of at least one semiconductor layer, and may have various semiconductor layers such as a barrier layer, a current diffusion layer, and a contact layer depending on the design for improving characteristics, etc.

[0052] The wiring board 12 has a conductive support substrate 12A, and an anode 16A and a cathode 16B formed on the front and back surfaces, respectively, of the support substrate 12A. The support substrate 12A is made of Si, which is an n-type semiconductor.

[0053] More specifically, an interlayer insulating film 14 made of SiO2 is formed on a support substrate 12A. A p-wiring electrode 16 is formed on the interlayer insulating film 14. The p-wiring electrode 16 is an insulating film and is covered with a substrate protective film 15 made of SiO2. As shown in FIGS. 5A, 1A, and 1B, the substrate protective film 15 has an opening outside the area where the wavelength conversion element 50 is mounted, and an anode 16A, which is a pad electrode provided on the p-wiring electrode 16, is exposed from the opening. That is, the anode 16A is provided on the upper surface of the wiring substrate 12 protruding beyond the area where the wavelength conversion element 50 is mounted.

[0054] In addition, the substrate protective film 15 has a rectangular opening corresponding to the p-electrode 25A on the bottom surface of the light-emitting functional layer 20, and the p-wiring electrode 16 is exposed from the rectangular opening and is joined to the p-electrode 25A of the light-emitting functional layer 20.

[0055] The substrate protective film 15 also has a circular opening corresponding to the via 26V of the light-emitting functional layer 20. The support substrate 12A is exposed from the circular opening, and an n-wiring electrode 18B, which is an ohmic electrode, is formed on the exposed portion.

[0056] The p-electrode 25A of the light-emitting functional layer 20 is joined to the p-wiring electrode 16 of the wiring substrate 12 by a bonding layer 26A. The n-electrode 25B of the light-emitting functional layer 20 is joined to the n-wiring electrode 18B on the support substrate 12A by a bonding layer 26B. That is, the light-emitting functional layer 20 has a p-electrode and an n-electrode on the bottom surface side of the light-emitting functional layer 20, and is mounted on the wiring substrate 12 with the p-side down.

[0057] [Second embodiment] FIG. 6A is a top view (upper row) and a side view (lower row) showing a semiconductor light emitting module 60 according to a second embodiment of the present invention.

[0058] The semiconductor light emitting module 60 has a module substrate 61, which is an LTCC (Low Temperature Co-fired Ceramics) multilayer ceramic substrate, and two semiconductor light emitting devices 10A and 10B (when not specifically distinguished, these will be referred to as semiconductor light emitting device 10) having the same structure as the semiconductor light emitting device 10.

[0059] A frame 62 is provided on a module substrate 61, and the semiconductor light emitting devices 10A and 10B are mounted inside the frame 62. The side surfaces of the semiconductor light emitting devices 10A and 10B are arranged adjacent to each other. The semiconductor light emitting devices 10A and 10B may also be arranged such that the side surfaces of the wavelength conversion elements 50 are in contact with each other. The space between the frame 62 and the semiconductor light emitting devices 10A and 10B is filled with a covering member 63.

[0060] The semiconductor light emitting devices 10A and 10B may emit light of the same color or may emit light of different colors.

[0061] Furthermore, since the semiconductor light emitting devices 10A and 10B are shielded from light by the light-shielding film 55, the covering member 63 does not necessarily have to be provided. If the covering member is provided for the purpose of protecting the semiconductor light emitting devices 10A and 10B or for improving the appearance of the devices, a covering member that is translucent, white, black, or the like can be appropriately selected and used.

[0062] The module substrate 61 has an upper surface wiring layer (first wiring layer) 61A, a buried wiring layer (second wiring layer) 61B, and a module bonding layer 61C provided on the bottom surface of the substrate. Also provided on the module substrate 61 are a first terminal 69A and a second terminal 69B (referred to as terminals 69 when no particular distinction is needed) electrically connected to the semiconductor light emitting devices 10A and 10B. The first terminal 69A and the second terminal 69B are, for example, an anode and a cathode, respectively.

[0063] The components of the semiconductor light emitting module 60 will be described in detail below. The module substrate 61 can use, for example, alumina, zirconia, or aluminum nitride as the base material. The wiring material can be, for example, silver (Ag), copper (Cu), or tungsten (W). The surface wiring material can be, for example, nickel / gold (Ni / Au). The module bonding layer 61C can be, for example, tungsten / nickel / gold (W / Ni / Au). Note that if the semiconductor light emitting module 60 is bonded to a heat sink or a wiring board with an adhesive, there is no need to provide the module bonding layer 61C.

[0064] For example, silicone resin or epoxy resin can be used for the frame 62. When the frame 62 is to be white, for example, titanium oxide particles or alumina particles can be contained in the silicone resin or epoxy resin, and when the frame 62 is to be black, for example, black titanium oxide, black alumina, or carbon black can be contained. A thickener or a thixotropic agent may also be contained.

[0065] 6B is a perspective view showing an example of a mounting form of the semiconductor light emitting module 60. The semiconductor light emitting module 60 is mounted on a heat sink 110 using a thermally conductive adhesive 112. In addition, the terminals 69 of the semiconductor light emitting module 60 are connected to wiring 114 of the circuit board 113 by ribbon wiring 115.

[0066] In this way, the semiconductor light emitting module 60 has excellent heat dissipation properties because the module substrate 61 can be directly mounted on a heat sink. Also, the first terminals 69A and second terminals 69B of the semiconductor light emitting module 60 can be connected to the wiring of the circuit board 113 by ribbon wiring 115 (e.g., copper ribbon, gold ribbon), so heat dissipation by the ribbon wiring 115 is also possible. Furthermore, by covering the frame 62, the covering member 63, and the wavelength conversion element 50 with a translucent fluororesin, they can be protected from corrosive atmospheric gases.

[0067] 7A is a plan view showing the internal configuration of the semiconductor light emitting module 60 as seen from above, and a cross-sectional view taken along line AA in the plan view. For ease of explanation and understanding, the upper and lower sections are shown side by side, respectively. Also, FIG. 7B is a plan view schematically showing the wiring of two wiring layers (top wiring layer 61A and buried wiring layer 61B) of the module substrate 61. Also, the illustration of the covering member is omitted.

[0068] As shown in FIGS. 7A and 7B, the upper wiring layer 61A of the module substrate 61 has mounting wires 65A and 65B on which the semiconductor light emitting devices 10A and 10B are respectively mounted, a relay wire 66, and terminal wires 64A and 64B.

[0069] The anodes 16A of the semiconductor light emitting devices 10A and 10B are connected to the relay wiring 66 by bonding wires, and the cathodes 16B are connected to the mounting wiring 65A and 65B by bonding layers. Therefore, the semiconductor light emitting devices 10A and 10B are connected in series between the terminal wirings 64A and 64B. The terminal wirings 64A and 64B are connected to the first terminal 69A and the second terminal 69B, respectively.

[0070] The semiconductor light emitting module 60 is provided with a protection element 67. The protection element 67 may be, for example, a Zener diode, a varistor, or a capacitor.

[0071] The module substrate 61 has a buried wiring layer 61B provided on the lower surface side of the upper surface wiring layer 61A. The buried wiring layer 61B has buried wiring 68. The mounted wirings 65A and 65B (referred to as mounted wiring 65 when no particular distinction is made) of the upper surface wiring layer 61A, the relay wiring 66, and the terminal wirings 64A and 64B are connected to the buried wiring 68 of the buried wiring layer 61B through via wiring 61V.

[0072] According to this configuration, the semiconductor light emitting devices 10A and 10B are arranged adjacent to each other or in contact with each other, and a semiconductor light emitting module can be provided that has excellent light blocking properties between the semiconductor light emitting devices 10A and 10B and suppresses crosstalk.

[0073] Furthermore, a semiconductor light emitting module having a high contrast light output surface can be provided without disposing a light-shielding member or the like around the wavelength conversion element. Also, a semiconductor light emitting module in which semiconductor light emitting devices are arranged compactly can be provided.

[0074] [Third embodiment] FIG. 8A is a top view (upper part) and a side view (lower part) showing the internal structure of a semiconductor light emitting module 70 according to a third embodiment of the present invention.

[0075] In the semiconductor light emitting module 60 of the second embodiment, the semiconductor light emitting devices 10 are arranged in one row and two columns, but in the semiconductor light emitting module 70, the semiconductor light emitting devices 10 are arranged in three rows and two columns. Note that the covering member is not shown in the drawing.

[0076] More specifically, in the semiconductor light emitting module 70, semiconductor light emitting devices 10(m, n) are arranged in a matrix (m=3, n=2) inside a frame body 62. Semiconductor light emitting devices 10(1,1) and 10(1,2) are arranged in the first row. The module substrate 71 of the semiconductor light emitting module 70 has three wiring connection systems similar to those on the module substrate 61 of the semiconductor light emitting module 60, which are electrically independent of each other and arranged in parallel.

[0077] More specifically, the anodes 16A (not shown) of the semiconductor light emitting devices 10(1,1) and 10(1,2) are connected to the relay wiring 66 by bonding wires, and the relay wiring 66 is connected to the buried wiring 68. Therefore, the semiconductor light emitting devices 10(1,1) and 10(1,2) are connected in series between the terminal wirings 64A1 and 64B1. The semiconductor light emitting devices 10(1,1) and 10(1,2) constitute a first system L1.

[0078] The same is true for the semiconductor light emitting devices 10(2,1) and 10(2,2) in the second row and the semiconductor light emitting devices 10(3,1) and 10(3,2) in the third row. That is, the semiconductor light emitting devices 10(2,1) and 10(2,2) of the second system L2 are connected in series between the terminal wirings 64A2 and 64B2. Also, the semiconductor light emitting devices 10(3,1) and 10(3,2) of the third system L3 are connected in series between the terminal wirings 64A3 and 64B3. That is, the light emission of the first system L1, the second system L2, and the third system L3 can be controlled independently.

[0079] Therefore, by controlling the power supply to each system separately, it is possible to adjust the light emission pattern and light intensity. Also, by providing semiconductor light emitting devices 10 with different light emission colors for each system, it is possible to make the light emission colors different for each system.

[0080] Fig. 8B is a cross-sectional view schematically showing a cross section taken along line AA shown in Fig. 8A, i.e., a cross section that intersects the semiconductor light-emitting device 10(1,1) of the first system L1 and the semiconductor light-emitting device 10(2,1) of the second system L2 disposed adjacent thereto.

[0081] The semiconductor light emitting devices 10(1,1) and 10(2,1) are bonded to the mounting wiring 65 by a bonding layer 73 and are disposed adjacent to each other. More specifically, the semiconductor light emitting devices 10(1,1) and 10(2,1) are disposed adjacent to each other with a narrow gap of 200 μm or less.

[0082] The semiconductor light emitting devices 10(1,1) and 10(2,1) may be arranged with a narrow gap of 20 to 200 μm between them, or may be arranged with a narrow gap of 100 μm or less, or an even narrower gap of 50 μm or less, in close proximity to each other, or in contact with each other (gap = 0).

[0083] In this specification, closely spaced arrangement refers to the case where semiconductor light emitting devices 10 are spaced apart by a narrow gap (200 μm or less).

[0084] With this configuration, the light-shielding coating 55 of the wavelength conversion element 50 prevents light leakage regardless of the direction of the long wavelength light WL and the short wavelength light WS. In addition, it is possible to prevent light bleeding caused by pseudo-emission of adjacent light emitting devices when each system is energized.

[0085] Furthermore, when semiconductor light emitting devices 10 are arranged adjacent to each other, two light-shielding coatings 55 are arranged between the light emitting functional layers 20 and wavelength converters 51 of adjacent semiconductor light emitting devices 10. For example, if the light leakage of one light-shielding coating is 0.05 (5%), the light leakage is reduced to 0.0025 (0.25%) by the two light-shielding coatings 55. Furthermore, by placing a light-shielding (reflective or absorptive) covering member between adjacent semiconductor light emitting devices 10, the light leakage can be further reduced.

[0086] [Fourth embodiment] Fig. 9A is a top view showing a semiconductor light emitting module 80 according to a fourth embodiment of the present invention. Fig. 9B is a top view of the semiconductor light emitting module 80, showing a plan view (upper) illustrating the internal configuration and a cross-sectional view (lower) showing a cross section taken along line AA in the plan view. Fig. 9C is a plan view schematically showing wiring in an upper surface wiring layer 81A and a buried wiring layer 81B of a module substrate 81.

[0087] 9A and 9B, semiconductor light emitting module 80 includes four semiconductor light emitting devices 10A1, 10B1, 10A2, and 10B2 provided inside frame 62 on module substrate 81. More specifically, four semiconductor light emitting devices 10A1, 10B1, 10A2, and 10B2 are arranged adjacent to one another in a 2×2 matrix.

[0088] A pair of semiconductor light emitting devices 10A1 and 10A2 arranged at diagonal positions emit a first emission color, for example, white light, and another pair of semiconductor light emitting devices 10B1 and 10B2 arranged at diagonal positions emit a second emission color, for example, amber (orange) light.

[0089] The semiconductor light emitting devices 10A1 and 10A2 (semiconductor light emitting devices emitting a first emission color) are mounted on a mounting wiring 85A. The anodes 16A of the semiconductor light emitting devices 10A1 and 10A2 are connected to a relay wiring 86A by bonding wires, and the cathodes 16B are connected to the mounting wiring 85A by a bonding layer.

[0090] The same is true for the other pair of semiconductor light-emitting devices 10B1 and 10B2 (semiconductor light-emitting devices of a second emission color), in which the semiconductor light-emitting devices 10B1 and 10B2 are mounted on the mounting wiring 85B, with the anode 16A connected to the relay wiring 86B by a bonding wire and the cathode 16B connected to the mounting wiring 85B by a bonding layer.

[0091] As shown in FIG. 9B, first to fourth terminals 69A1, 69B1, 69A2, and 69B2 (indicated by dashed lines) of semiconductor light emitting module 80 are provided on terminal wirings 64A1, 64B1, 64A2, and 64B2 of upper wiring layer 81A.

[0092] 9C is a diagram showing buried wirings 88A and 88B in the buried wiring layer 81B of the module substrate 81. To make it easier to understand the positional relationship with the wiring in the upper surface wiring layer 81A, the mounted wirings 85A and 85B and relay wirings 86A and 86B (broken lines) in the upper surface wiring layer 81A are shown overlapping each other.

[0093] The mounted wirings 85A and 85B, the relay wirings 86A and 86B, and the terminal wirings 64A1, 64B1, 64A2, and 64B2 of the upper surface wiring layer 81A are connected to the buried wirings 88A and 88B of the buried wiring layer 81B through via wirings 81V.

[0094] For ease of understanding, FIGS. 10A and 10B are diagrams each showing a schematic diagram of the connection of semiconductor light emitting devices 10A1 and 10A2 and the connection of semiconductor light emitting devices 10B1 and 10B2, separated from each other.

[0095] 10A, a pair of semiconductor light emitting devices 10A1 and 10A2 are connected in series between terminal wirings 64A1 and 64B1 by buried wiring 88A, and therefore semiconductor light emitting devices 10A1 and 10A2 form a first system of connection circuit.

[0096] 10B, another pair of semiconductor light emitting devices 10B1 and 10B2 are connected in series between terminal wirings 64A2 and 64B2 by buried wiring 88B, and therefore semiconductor light emitting devices 10B1 and 10B2 form a second system of connection circuit.

[0097] The first connection circuit system for the first luminous color and the second connection circuit system for the second luminous color are electrically separated, and the light emission of each can be controlled independently.

[0098] The semiconductor light emitting module 80 of this embodiment offers the same advantages as the semiconductor light emitting modules of the second and third embodiments described above, namely, it allows for close-proximity mounting and contact mounting of multiple light emitting devices, provides excellent light blocking between the light emitting devices, and prevents light bleeding due to pseudo-emission of adjacent semiconductor light emitting devices 10.

[0099] Furthermore, according to the semiconductor light emitting module 80 of this embodiment, a plurality of semiconductor light emitting devices having one emission color and a plurality of semiconductor light emitting devices having a different emission color can be arranged in a cross arrangement, i.e., in a staggered checkerboard pattern. That is, even with such an arrangement, a semiconductor light emitting module can be provided that has excellent light blocking between the light emitting devices and suppresses bias in the emission color of each semiconductor light emitting device.

[0100] As described above in detail, according to the present invention, it is possible to provide a light emitting device that has high performance in blocking light emitted from the light emitting element and light emitted from the wavelength conversion element without providing separate covering members on the side surfaces of the light emitting element. Furthermore, it is possible to provide a light emitting module that allows multiple light emitting devices to be arranged closely or in contact with each other, has excellent light blocking properties between the light emitting devices, and suppresses crosstalk. [Explanation of symbols]

[0101] 10, 10A, 10B, 10(m, n), 10A1, 10B1, 10A2, 10B2: semiconductor light-emitting device 11: Light emitting element 12: Wiring board 12A: Support board 14: Interlayer insulating film 15: Substrate protection film 16:p-wiring electrode 16A: Anode 16B: Cathode 18B:n-wiring electrode 20: Light-emitting functional layer 21: n-type semiconductor layer 22: Light-emitting layer 23: p-type semiconductor layer 25A:p-electrode 25B:n-electrode 26V:Via 50: Translucent optical element 51: Translucent optical body 55: Light-shielding film 55R: Rim section 60, 70, 80: Semiconductor light emitting module 61, 71, 81: Module board 61A, 81A: Top wiring layer 61B, 81B: Buried wiring layer 61V, 81V: Via wiring 62: Frame 63: Covering material 64, 64A, 64B, 64A1, 64B1, 64A2, 64B2: Terminal wiring 65, 65A, 65B, 85A, 85B: Mounted wiring 66, 86A, 86B: Relay wiring 67: Protective element 68, 88A, 88B: Buried wiring 69A, 69B, 69A1, 69B1, 69A2, 69B2: Terminals

Claims

1. a wiring substrate having a p-electrode and an n-electrode provided on a base; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer, At least a part of the frame portion of the light-shielding film is in contact with the upper surface of the wiring substrate.

2. 2. The semiconductor light emitting device according to claim 1, wherein at least one of the p-electrode and the n-electrode is provided on the surface of the wiring substrate to which the translucent optical element is bonded.

3. 3. The semiconductor light emitting device according to claim 1, wherein the light blocking film is provided over the entire side surface of the light-transmitting optical body.

4. a wiring substrate having a p-electrode and an n-electrode provided on a base; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer, At least a part of a side surface of the light-transmitting optical element protrudes beyond a side surface of the wiring substrate.

5. The semiconductor light emitting device according to claim 4 , wherein the light-shielding film is provided over the entire side surface of the light-transmitting optical body.

6. a wiring substrate having a p-electrode and an n-electrode provided on a base; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer, The semiconductor light emitting device, wherein the light-transmitting optical element has a rectangular columnar shape, and three of the side surfaces of the light-transmitting optical element protrude beyond the side surfaces of the wiring substrate.

7. 4. The semiconductor light emitting device according to claim 1, wherein the light emitting functional layer has a reflective layer on a surface facing the wiring substrate.

8. 8. The semiconductor light emitting device according to claim 1, wherein the light-transmitting optical element is a wavelength conversion element.

9. A semiconductor light emitting module comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 8, A semiconductor light emitting module comprising two of the semiconductor light emitting devices arranged with the side surfaces of the light-transmitting optical element adjacent to each other.

10. The semiconductor light emitting module according to claim 1 , comprising two of the semiconductor light emitting devices arranged such that the side surfaces of the light-transmitting optical element are in contact with each other.

11. The semiconductor light emitting module according to claim 9 , wherein the two semiconductor light emitting devices have different emission colors.

12. A semiconductor light emitting module comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 8, A semiconductor light emitting module having a plurality of series-connected systems, each of which is made up of two of the semiconductor light emitting devices connected in series, with the side surfaces of the light-transmitting optical elements being arranged adjacent to each other.

13. The semiconductor light emitting module according to claim 12 , wherein the semiconductor light emitting devices of the plurality of series-connected systems are arranged adjacent to one another in a matrix.

14. The semiconductor light emitting module according to claim 12 or 13, wherein each of the plurality of series-connected systems emits light of a different color.

15. A semiconductor light emitting module comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 8, A semiconductor light emitting module in which four of the semiconductor light emitting devices are arranged in a 2x2 matrix, and one pair of the semiconductor light emitting devices arranged in a diagonal position and another pair of the semiconductor light emitting devices arranged in a diagonal position are each connected in series to have two series connection systems.

16. The semiconductor light emitting module according to claim 15 , wherein the two series-connected systems emit light of different colors.

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