Semiconductor light emitting device and semiconductor light emitting module

Abstract

To provide a highly reliable light-emitting device with a high light-blocking characteristic against emission light from a light-emitting element and emission light from a wavelength conversion member without providing an individual covering member on a side surface of the light-emitting element, and provide a highly reliable light-emitting module in which a plurality of light-emitting devices can be disposed closely and in contact, light locking between the light-emitting devices is excellent, and crosstalk is suppressed.SOLUTION: A semiconductor light-emitting device includes a wiring board 12 where a p-electrode and an n-electrode are provided on a back surface, a light-emitting function layer 20 including a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer and bonded onto an upper surface of the wiring board, a wavelength conversion element 50 provided on a side surface of the wavelength conversion body 51 with a plate shape and including a light-blocking film 55 having an annular frame body part formed on a peripheral part of a back surface of the wavelength conversion body while covering the peripheral part, and an adhesive layer 20 having the wavelength conversion element attached onto an upper surface of the wiring board so that the light-emitting function layer is inserted into a concave part inside the frame body part. The concave part is filled with the adhesive layer.SELECTED DRAWING: Figure 1B

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light emitting device and a semiconductor light emitting module, and more particularly to a semiconductor light emitting device and a semiconductor light emitting module having a semiconductor light emitting element such as a light emitting diode (LED). [Background technology]

[0002] In recent years, semiconductor light-emitting elements such as light-emitting diodes (LEDs) have been arranged and used in multiple devices in order to achieve higher output and light distribution control.

[0003] For example, adaptive driving beam (ADB) headlamps are known for their variable light distribution, which controls the light distribution according to the driving environment. Also known are high-power LED packages for lighting and LED packages for information and communication devices with high-density LED arrangements.

[0004] However, in general, in a semiconductor light emitting device in which multiple semiconductor light emitting elements are arranged side by side, a portion of the light emitted from the conductive elements may propagate to the non-conductive elements, and such light leakage and optical crosstalk have been problems in various application fields in which multiple semiconductor light emitting elements are arranged and used.

[0005] For example, Patent Document 1 discloses a semiconductor light-emitting device in which the side surfaces of a substrate and a light-emitting element are covered with a light-reflecting layer formed by atomic layer deposition. Patent Document 2 discloses a light-emitting element having a reflective member covering the side surfaces of a semiconductor laminate, the reflective member having a first insulator film and a second insulator film made of a dielectric multilayer film (DBR).

[0006] Patent Document 3 discloses a light emitting device having a light transmitting member, a light emitting element bonded to the light transmitting member, and a light guiding member extending from the surface of the light emitting element to the surface of the light transmitting member.

[0007] Patent Document 4 discloses a light emitting device having a light emitting element, a light transmitting member, and a covering member that contains a light reflective material and covers at least the side surface of the light transmitting member. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-225862 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-119063 [Patent Document 3] Japanese Patent Application Laid-Open No. 2010-219324 [Patent Document 4] Patent No. 5526782 Summary of the Invention [Problem to be solved by the invention]

[0009] In the conventional light emitting devices described above, a coating is provided on the side surfaces of the wavelength conversion member and the light emitting element, or a light guiding member is provided on the side surfaces of the wavelength conversion member and the light emitting element. In such light emitting devices, peeling or cracking can occur in the coating on the side surface of the light emitting element or the coating on the side surface of the joint between the light emitting element and the wavelength conversion member due to heating when the light emitting device is mounted or thermal history in the usage environment.

[0010] The present invention has been made in consideration of these points, and aims to provide a light-emitting device that has high light-blocking properties against light emitted from the light-emitting element and light emitted from the wavelength conversion element, and is highly reliable, without providing a separate covering member on the side surface of the light-emitting element.

[0011] Another object of the present invention is to provide a light emitting module that allows for close-contact mounting and contact mounting of a plurality of light emitting devices, provides excellent light shielding between the light emitting devices, suppresses crosstalk, and is highly reliable. [Means for solving the problem]

[0012] A semiconductor light emitting device according to one embodiment of the present invention comprises: a wiring substrate having a p-electrode and an n-electrode provided on the rear surface of the substrate; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to an upper surface of the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, The recess is filled with the adhesive layer.

[0013] A semiconductor light emitting module according to another embodiment of the present invention includes: A semiconductor light emitting module including a plurality of the semiconductor light emitting devices, The plurality of semiconductor light emitting devices are arranged such that the side surfaces of the light-transmitting optical elements are adjacent to each other. [Brief explanation of the drawings]

[0014] [Figure 1A] 1 is a cross-sectional view schematically showing a cross section of a semiconductor light-emitting device 10 according to a first embodiment of the present invention. [Figure 1B] FIG. 1B is a cross-sectional view showing a cross section taken along line AA in FIG. 1A. [Figure 1C] 1B is an exploded cross-sectional view showing the configuration of the semiconductor light-emitting device 10. FIG. [Figure 2A] FIG. 2 is a side view showing one side of the semiconductor light emitting device 10. [Figure 2B] 2 is a plan view showing the bottom surface of the semiconductor light emitting device 10. FIG. [Figure 3A] 10 is an SEM image showing a cross section of an example of a light-shielding film 55. [Figure 3B] 10 is an enlarged SEM image showing the upper end portion and rim portion 55R of the light-shielding film 55. [Figure 3C]10 is an SEM image showing a cross section of another example of a light-shielding film 55. [Figure 4A] 10 is a graph showing the film thickness of each layer of the dielectric multilayer film of the light-shielding film 55. [Figure 4B] 10 is a graph showing the wavelength dependency of the reflectance of a light-shielding film 55 having a dielectric multilayer film. [Figure 5A] 2 is a cross-sectional view schematically illustrating a cross section of an example of an LED 11 of the present embodiment. FIG. [Figure 5B] 5B is a cross-sectional view corresponding to FIG. 5A, showing a semiconductor light-emitting element portion and a support substrate portion of an LED 11 separated from each other. [Figure 5C] 1 is a circuit diagram showing the connection between the electrodes of the light-emitting functional layer 20 and the protective element 17 and the anode 16A and the cathode 16B. [Figure 6A] FIG. 2 is a plan view schematically showing the upper surface of the wiring substrate 12, that is, the surface on the bonding side with the light-emitting functional layer 20. [Figure 6B] 1 is a plan view schematically showing the back surface of a wiring board 12, that is, the surface on which an LED 11 is mounted on a circuit board such as a PCB board. [Figure 7A] FIG. 2 is a plan view schematically showing the upper surface of the light-emitting functional layer 20. [Figure 7B] 1 is a plan view schematically showing the back surface of the light-emitting functional layer 20 (the surface to be bonded to the wiring substrate 12). [Figure 8] 10 is a cross-sectional view schematically illustrating a cross section of another example of an LED 11A according to the present embodiment. FIG. [Figure 9A] FIG. 1 is a top view showing two semiconductor light emitting devices 10 arranged so that their side surfaces are in contact with each other. [Figure 9B] FIG. 1 is a cross-sectional view showing two semiconductor light emitting devices 10 of the same size arranged in contact with each other. [Figure 9C] 10 is a cross-sectional view showing another example of the arrangement of two semiconductor light emitting devices 10. FIG. [Figure 10A] FIG. 1 is a top view showing two semiconductor light emitting devices 10 arranged with their side surfaces spaced apart from each other. [Figure 10B]The cross-sectional view which shows the case where two semiconductor light-emitting devices 10 are arranged such that the width WC of the wavelength conversion element 50 is larger than the width WE of the wiring board 12 (WE < WC). [Figure 10C] The cross-sectional view which shows the case where two semiconductor light-emitting devices 10 are arranged such that the width WC of the wavelength conversion element 50 is equal to the width WE of the wiring board 12 (WE = WC). [Figure 10D] The cross-sectional view which shows the case where two semiconductor light-emitting devices 10 are arranged such that the width WC of the wavelength conversion element 50 is smaller than the width WE of the wiring board 12 (WE > WC). [Figure 11] The top view (upper part) and cross-sectional view (lower part) which show the semiconductor light-emitting module 60 according to the second embodiment of the present invention. [Figure 12] The plan view which schematically shows the wiring of the upper surface wiring layer 61A and the buried wiring layer 61B of the module substrate 61. [Figure 13] The top view which shows the semiconductor light-emitting module 70 according to the third embodiment of the present invention. [Figure 14] The cross-sectional view which schematically shows the cross-section along the line A-A shown in FIG. 13. [Embodiments for Carrying Out the Invention]

[0015] Hereinafter, preferred embodiments of the present invention will be described, but these may be appropriately modified and combined. In the following description and the accompanying drawings, substantially the same or equivalent parts will be denoted by the same reference numerals and described. [First Embodiment] FIG. 1A is a top view schematically showing a cross-section of the semiconductor light-emitting device 10 according to the first embodiment of the present invention. FIG. 1B is a cross-sectional view showing the cross-section along the line A-A of FIG. 1A. Further, FIG. 1C is an exploded cross-sectional view corresponding to FIG. 1B and showing the configuration of the semiconductor light-emitting device 10.

[0016] As shown in FIGS. 1A, 1B, and 1C, the semiconductor light-emitting device 10 has an LED (light-emitting diode) 11 which is a light-emitting element and a wavelength conversion element 50 which is a translucent optical element. The wavelength conversion element 50 is adhered onto the LED 11 by a translucent adhesive layer 57.

[0017] 1C, the LED 11 has a wiring substrate (submount) 12 and a light-emitting functional layer 20. The wiring substrate 12 has a support substrate 12A, the light-emitting functional layer 20 formed on the support substrate 12A, an anode 16A, and a cathode 16B. Emitted light LE is emitted from the LED 11. The support substrate 12A is made of, for example, Si (silicon) and is opaque to the emitted light from the LED 11, blocking the emitted light.

[0018] The light-emitting functional layer 20 is an LED semiconductor layer, and is a p-type semiconductor layer The light-emitting functional layer 20 has an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer provided between the n-type semiconductor layer. The light-emitting functional layer 20 may have a p-electrode and an n-electrode. For example, a light-reflective electrode or a light-reflective layer may be provided on the bottom side of the light-emitting functional layer 20. Alternatively, the light-emitting functional layer 20 may be attached to the support substrate 12 by a reflective bonding member. A The light-emitting functional layer 20 may be electrically connected to the anode 16A and the cathode 16B of the support substrate 12.

[0019] The wavelength conversion element 50 has a plate-shaped wavelength converter 51 and a light-shielding film 55 provided on the side surface of the wavelength converter 51. In this embodiment, the light-shielding film 55 is provided over the entire side surface of the wavelength converter 51. However, the light-shielding film 55 may be provided on at least a part of the side surface of the wavelength converter 51, i.e., on the side surface portion where light is desired to be blocked.

[0020] In the following, the wavelength conversion element 50 will be described as an example of the light-transmitting optical element provided on the LED 11, but the present invention is not limited to this. The present invention can be applied to a light-transmitting optical element 50 having a light-transmitting optical body 51 instead of the wavelength conversion body 51 and a light-shielding film 55 provided on the side surface of the light-transmitting optical body 51.

[0021] In addition, in this embodiment, the wavelength conversion element 50 has a rectangular pillar shape, but the shape of the wavelength conversion element 50 is not limited to this. For example, the wavelength conversion element 50 may have a polygonal pillar shape, a cylindrical shape (including an elongated cylindrical shape), or any other shape.

[0022] In addition, in the present embodiment, the case where the translucent adhesive layer 57 fills the gap between the LED 11 and the translucent optical element 50 will be described as an example, but the present invention is not limited to this. For example, the translucent optical element 50 may be adhered only to the periphery of the wiring substrate 12 of the LED 11.

[0023] As shown in FIG. 1C, the emitted light LE emitted from the light-emitting functional layer 20 of the LED 11 passes through the adhesive layer 57 and enters the wavelength converter 51 from the rear surface 51B of the wavelength converter 51 (i.e., the surface on the light-emitting functional layer 20 side).

[0024] The emitted light LE of the LED 11 is, for example, blue light. A portion of the emitted light LE of the LED 11 is wavelength-converted to, for example, yellow light when passing through the wavelength converter 51. Then, white light, which is a mixture of the yellow light and the blue light that has passed through the wavelength converter 51, is emitted from the upper surface 51S of the wavelength converter 51 (emitted light LM).

[0025] The light LE emitted from the LED 11 is not limited to blue light, but may be light in the visible light band such as red or green light, or light outside the visible light band such as ultraviolet light or infrared light.

[0026] The light-shielding film 55 is formed so as to cover the peripheral edge of the back surface 51B of the wavelength converter 51, and has a frame portion (hereinafter referred to as a rim portion) 55R protruding from the back surface 51B. That is, the rim portion 55R is formed as a rectangular ring-shaped frame on the peripheral edge of the back surface 51B of the wavelength converter 51.

[0027] 1B, a bottom 55B of the annular rim portion 55R of the light-shielding film 55 is bonded by an adhesive layer 57 so as to contact the upper surface of the wiring substrate 12 of the LED 11. That is, the light-emitting functional layer 20 is inserted into a recess 55S formed inside the rim portion 55R, and the inside of the recess 55S is filled with the adhesive layer 57 is filled by

[0028] The rim portion 55R may not be in contact with the upper surface of the wiring substrate 12, and there may be a gap between the bottom portion 55B of the rim portion 55R and the upper surface of the wiring substrate 12. Even in this case, the light-emitting functional layer 20 is embedded in the adhesive layer 57. It is preferable that at least a portion of the bottom portion 55B of the rim portion 55R be in contact with the upper surface of the wiring substrate 12. Furthermore, it is most preferable in terms of light-blocking properties that the entire bottom portion 55B of the rim portion 55R be in contact with the upper surface of the wiring substrate 12.

[0029] 2A is a side view showing one side of the semiconductor light emitting device 10. A wavelength conversion element 50 is mounted on a wiring substrate 12. The central axis CX of the wavelength conversion element 50 is also shown.

[0030] The lateral external dimensions of the semiconductor light emitting device 10 are determined by the width WC of the wavelength conversion element 50 and the width WE of the wiring substrate 12. As shown in Fig. 2A, the width WC of the wavelength conversion element 50 is larger than the width WE of the wiring substrate 12, and the side surfaces of the wavelength conversion element 50 protrude beyond the side surfaces of the LED 11, i.e., the side surfaces of the wiring substrate 12. Note that Fig. 2A shows a case where the entire bottom portion 55B of the annular rim portion 55R of the light-shielding film 55 is formed in contact with the upper surface of the wiring substrate 12 of the LED 11.

[0031] 2B is a plan view showing the bottom surface of the semiconductor light emitting device 10. The anode 16A and the cathode 16B arranged on the bottom surface of the semiconductor light emitting device 10 are indicated by dashed lines.

[0032] On one side surface of the semiconductor light emitting device 10, the width WC1 of the wavelength conversion element 50 is larger than the width WE1 of the wiring board 12, and the side surface protrudes beyond the side surface of the wiring board 12. Similarly, on the other side surface of the semiconductor light emitting device 10 that is perpendicular to the one side surface, the width WC2 of the wavelength conversion element 50 is larger than the width WE2 of the wiring board 12, and the side surface protrudes beyond the side surface of the wiring board 12. In this specification, unless otherwise specified, The above aspects are: The width WC of the wavelength conversion element 50 and the width WE of the wiring substrate 12 are collectively referred to as the width WC.

[0033] Therefore, a plurality of semiconductor light emitting devices 10 can be arranged so that the wavelength conversion elements 50 are in contact with one another. In particular, when the semiconductor light emitting device 10 has a rectangular pillar shape, the plurality of semiconductor light emitting devices 10 can be arranged in a matrix so that the four side surfaces of the semiconductor light emitting devices 10 are in contact with one another.

[0034] As described above, the shape of the wavelength conversion element 50 is not limited to a rectangular prism, and may be a polygonal prism (including a triangular prism, a hexagonal prism, etc.), a cylindrical shape (including an elongated cylindrical shape), or any other arbitrary shape. Even in such a case, a plurality of semiconductor light emitting devices 10 can be arranged so that the wavelength conversion elements 50 are in contact with each other.

[0035] It is sufficient that at least a part of the side surface of the wavelength conversion element 50 protrudes beyond the side surface of the wiring substrate 12, but it is most preferable that the entire side surface of the wavelength conversion element 50 protrudes beyond the side surface of the wiring substrate 12.

[0036] Fig. 3A is an SEM (scanning electron microscope) image showing a cross section of an example of light-shielding film 55. Fig. 3B is an SEM image showing an enlarged view of the upper end portion and rim portion 55R of light-shielding film 55. Fig. 3C is an SEM image showing a cross section of another example of light-shielding film 55.

[0037] Here, the light-shielding film 55 was formed as a dielectric multilayer film in which Al2O3 films and TiO2 films were alternately stacked. The light-shielding film 55 was formed by atomic layer epitaxy (ALE) using a gas source molecular beam epitaxy (MBE) device. It can also be formed by atomic layer deposition (ALD).

[0038] 4A is a graph showing the film thickness of each layer of the dielectric multilayer film of the light-shielding film 55. A thick layer (200 nm) was formed as a base layer, and a dielectric multilayer film functioning as a reflective film was formed on top of that. The dielectric multilayer film was formed by alternately stacking two dielectric films with different refractive indices, namely, Al2O3 films (Aj:j=1,2,...) and TiO2 films (Bj:j=1,2,...).

[0039] The thicknesses of the Al2O3 film and the TiO2 film were changed so that the angle dependency of the light-shielding characteristics would be small in the wavelength range of light incident on the light-shielding film 55. In other words, a multilayer film was adopted that included Al2O3 film and TiO2 film whose thicknesses were modulated to correspond to a film thickness corresponding to λ / 4 (λ: wavelength within the medium). The total thickness of the light-shielding film 55 was 4.7 μm.

[0040] 4B shows the results of calculating the wavelength dependency of the reflectance of the light-shielding film 55 having the above-mentioned dielectric multilayer film, using the angle of incidence of light as a parameter. It can be seen that in the visible light band, the angle dependency on the angle of incidence is small, and a high reflectance can be obtained.

[0041] That is, as described above, by changing the film thickness of each of the two films constituting the dielectric multilayer film and reducing the wavelength dependency and angle dependency, a light-shielding film 55 with high light-shielding performance can be obtained, and even when the wavelength conversion elements 50 are arranged in contact with each other, problems such as pseudo-emission of light from adjacent semiconductor light-emitting devices 10 can be prevented.

[0042] The light-shielding film 55 may be a dielectric multilayer film in which Al2O3 films and TiO2 films each having a thickness corresponding to λ / 4 are alternately stacked.

[0043] 3A, it can be seen that the light-shielding film 55 having a flat and uniform layer structure is firmly attached to the flat side surface of the wavelength converter 51. Furthermore, as shown in FIG. 3B, it was confirmed that the light-shielding film 55 also has a flat and uniform layer structure at the upper end of the light-shielding film 55. It was also confirmed that the light-shielding film 55 is formed on the peripheral edge of the bottom surface of the wavelength converter 51, and that a rim portion 55R made of a multilayer film is formed at the lower end of the light-shielding film 55.

[0044] FIG. 3C is an SEM image showing a cross section of another example of a light-shielding film 55. Similar to FIG. 3B, an enlarged SEM image of the upper end and rim portion 55R of the light-shielding film 55 is shown. In this example of the light-shielding film 55, the side surface of the wavelength converter 51 has wavy irregularities, and the side surface is less flat than the wavelength converter 51 shown in FIG. 3B. However, it can be seen that the light-shielding film 55 is firmly adhered to and formed on the side surface of the wavelength converter 51. Furthermore, even if the layer structure of the light-shielding film 55 has some undulations, it still functions sufficiently as a light-shielding film. Furthermore, it was confirmed that a rim portion 55R made of a multilayer film was formed at the lower end of the light-shielding film 55.

[0045] With this configuration, of the light emitted from the light-emitting functional layer 20 of the LED 11, light emitted in the side direction (lateral direction) of the light-emitting functional layer 20 is blocked by the rim portion 55R and prevented from emitting to the outside. In addition, light guided inside the wavelength converter 51 is also blocked by the light-shielding film 55. Therefore, in the semiconductor light-emitting device 10, light is emitted only from the upper surface 51S of the wavelength converter 51 (emitted light LM).

[0046] The light-emitting functional layer 20 is protected by the wiring substrate 12 and the wavelength conversion element 50. The light-emitting functional layer 20 is hermetically sealed by the adhesive layer 57.

[0047] The light-shielding film 55 can be formed of, for example, a dielectric multilayer film or a light-shielding ceramic film. The dielectric multilayer film used for the light-shielding film 55 can be, for example, a multilayer film made of two or more of Al2O3, TiO2, SiO2, Ta2O5, and Nb2O5, but is not limited to this, and a light-shielding or reflective multilayer film in which various films are alternately stacked can be used.

[0048] Alternatively, when a ceramic film is used as the light-shielding film 55, a film made of alumina, zirconia, aluminum nitride, or silicon nitride can be used.

[0049] Furthermore, alumina, glass, aluminum garnet, etc. can be used as the base material of the wavelength converter 51, and YAG:Ce, GYAG:Ce, LuAG:Ce, α-sialon, β-sialon, CASN, SCASN, etc. can be used as the phosphor.

[0050] As described above, in the semiconductor light-emitting device 10, the wavelength conversion element 50, which is slightly larger than the light-emitting functional layer 20, is bonded onto the LED 11. In addition, electrodes for supplying power to the LED 11 are provided on the upper and / or lower surfaces of the support substrate 12A. Therefore, it is possible to realize a semiconductor light-emitting device 10 that is slightly larger than the wavelength conversion element 50 and has high light-blocking properties that prevent light from radiating sideways. [LED11 structure] Fig. 5A is a cross-sectional view schematically illustrating a cross section of an example of the LED 11 of this embodiment. Fig. 5B corresponds to Fig. 5A and is a cross-sectional view showing the semiconductor light-emitting element portion and the support substrate portion of the LED 11 separated from each other. Figs. 5A and 5B are cross-sectional views taken along line AA shown in Figs. 6A and 7B.

[0051] The LED 11 has a wiring substrate 12 and a light-emitting functional layer 20 bonded onto the wiring substrate 12. The wiring substrate 12 is made up of a first substrate semiconductor layer 13, a second substrate semiconductor layer 15, and an interlayer insulating film 14 provided between the first substrate semiconductor layer 13 and the second substrate semiconductor layer 15.

[0052] Furthermore, on the rear surface of the wiring board 12, a first mounting electrode (anode) 16A and a second mounting electrode (cathode) 16B are provided which are electrically connected to the light-emitting functional layer 20 and which drive the light-emitting functional layer 20.

[0053] In addition, a protective element 17 is provided on the second substrate semiconductor layer 15 of the support substrate 12A. The protective element 17 is electrically connected to the light-emitting functional layer 20 and functions as a protective circuit for the light-emitting functional layer 20.

[0054] The light-emitting functional layer 20 has an LED semiconductor layer 32 which is a semiconductor light-emitting laminate made up of an n-type semiconductor layer 33 as a second semiconductor layer, a p-type semiconductor layer 35 as a first semiconductor layer, and a light-emitting layer 34 provided between the n-type semiconductor layer 33 and the p-type semiconductor layer 35. The light-emitting functional layer 20 also has electrodes 36A and 36B connected to the n-type semiconductor layer 33 and the p-type semiconductor layer 35.

[0055] In this embodiment, the light-emitting functional layer 20 is bonded to the wiring substrate 12 with the p-type semiconductor layer 35 (semiconductor layer of the first conductivity type), which is the topmost grown layer, facing downward, and the n-type semiconductor layer 33 (semiconductor layer of the second conductivity type) is used as the surface layer of the LED 11. Light emitted from the light-emitting functional layer 20 is radiated from the n-type semiconductor layer 33 to the outside of the LED 11 (radiated light LE).

[0056] In this embodiment, the first conductivity type is p-type and the second conductivity type is n-type, but the first conductivity type may be n-type and the second conductivity type may be p-type.

[0057] For ease of explanation and understanding, Fig. 5B is a schematic cross-sectional view showing the wiring board 12 and the light-emitting functional layer 20 separated from each other. The wiring board 12 and the light-emitting functional layer 20 will be described in detail below with reference to Fig. 5B. (wiring board 12) The wiring substrate 12 has a support substrate 12A, which is a substrate having an interlayer insulating film sandwiched between semiconductor layers, for example, an SOI (Silicon on Insulator) substrate. The first substrate semiconductor layer 13 and the second substrate semiconductor layer 15 are, for example, n-type Si (silicon) layers doped with P (phosphorus) or As (arsenic), and the interlayer insulating film 14 is a SiO2 film. Hereinafter, the first substrate semiconductor layer 13 and the second substrate semiconductor layer 15 will be referred to as the upper Si layer 13 and the lower Si layer 15, respectively.

[0058] The wiring substrate 12 is not limited to an SOI (Silicon on Insulator) substrate. In this specification, a substrate having a structure in which an interlayer insulating film is sandwiched between semiconductor layers such as Ge (germanium) is also referred to as an SOI (Semiconductor on Insulator) substrate.

[0059] The upper surface of the wiring substrate 12 (the surface on the bonding side with the light-emitting functional layer 20) is provided with a first wiring electrode 22A and a second wiring electrode 22B (hereinafter, collectively referred to as wiring electrodes 22 unless otherwise distinguished).

[0060] In this embodiment, the first wiring electrode 22A is a p-wiring electrode connected to the first element electrode (p-electrode) of the light-emitting functional layer 20, and the second wiring electrode 22B is an n-wiring electrode connected to the second element electrode (n-electrode) of the light-emitting functional layer 20.

[0061] The first wiring electrode (p-wiring electrode) 22A and the second wiring electrode (n-wiring electrode) 22B are protected by a protective film 28A, which is an insulating film (e.g., a SiO2 film). The first wiring electrode 22A is provided on the upper Si layer 13 via an insulating film 25, and is electrically insulated from the upper Si layer 13. The second wiring electrode 22B is provided on the upper Si layer 13 and is in ohmic contact with the upper Si layer 13.

[0062] Furthermore, a first mounting electrode 16A and a second mounting electrode 16B (hereinafter, collectively referred to as mounting electrodes 16 unless otherwise specified) are provided on the rear surface of the wiring board 12. First mounting electrode 16A and the second mounting electrode 16B are connected to wiring on a circuit board such as a PCB board.

[0063] In this embodiment, the first mounting electrode 16A is an anode, and the second mounting electrode 16B is a cathode. The anode 16A and the cathode 16B are protected by a protective film 28B, which is an insulating film (for example, an SiO2 film).

[0064] The anode 16A is connected to the first wiring electrode 22A through a metal via 23 that reaches from the back surface (back surface of the lower Si layer 15) to the top surface (surface of the upper Si layer 13) of the support substrate 12A. The first wiring electrode 22A, the metal via 23, and the anode 16A are insulated from the support substrate 12A by an insulating film 25.

[0065] It is preferable to provide a plurality of metal vias 23 in order to prevent poor conduction between the first wiring electrode 22A and the anode 16A and to improve the heat dissipation properties of the heat generated by the light-emitting functional layer 20.

[0066] The support substrate 12A is provided with a via (via hole) 26 that extends from the rear surface of the support substrate 12A to the surface or interior of the upper Si layer 13. The cathode 16B is electrically connected to the upper Si layer 13 through the via 26.

[0067] More specifically, an insulating film 27 is provided on the inner wall of the via 26. The cathode 16B is formed on the insulating film 27 and has a via electrode portion 24V that extends from the rear surface of the lower Si layer 15 to the upper Si layer 13. The cathode 16B is insulated from the lower Si layer 15.

[0068] The via electrode portion 24V of the cathode 16B is connected by ohmic contact to the upper Si layer 13 exposed from the via 26. Therefore, the cathode 16B is electrically connected to the second wiring electrode 22B through the upper Si layer 13.

[0069] It is desirable to provide multiple vias 26 including the via electrode portion 24V in order to prevent poor conductivity between the second wiring electrode 22B and the upper Si layer 13 and to improve the heat dissipation properties of the heat generated by the light-emitting functional layer 20.

[0070] Furthermore, a protection element 17 is provided in the lower Si layer 15 of the support substrate 12A. More specifically, an impurity diffusion region 17D (p-Si region) in which an impurity such as B (boron) or Al (aluminum) is diffused is formed in the lower Si layer 15, and the protection element 17 (indicated by the broken line in the drawing) which is a Zener diode (ZD) is formed by a pn junction between the impurity diffusion region 17D and the lower Si layer 15 in contact with the impurity diffusion region 17D.

[0071] An impurity diffusion region 17D (p-Si region), which is one end of the protection element 17, is connected to the cathode 16B. The other end of the protection element 17 is connected to the lower Si layer 15 and is electrically connected to the anode 16A via the lower Si layer 15 (n-Si layer).

[0072] More specifically, as shown in FIG. 5C, the positive electrode (anode) and negative electrode (cathode) of the protection element 17 are connected to the cathode 16B and anode 16A of the light-emitting functional layer 20, respectively, and are formed so as to be connected in parallel with the light-emitting functional layer 20.

[0073] The first wiring electrode 22A is made of, for example, Ni (nickel) / Au (gold), and the second wiring electrode 22B is made of, for example, Ti (titanium) or Ni / Au. The anode 16A and cathode 16B are made of, for example, Ni / Au. In these electrodes, Au is the surface layer. (Light-emitting functional layer 20) In this embodiment, a so-called thin-film LED is used as the LED semiconductor layer 32 in the light-emitting functional layer 20. More specifically, the LED semiconductor layer 32 has a configuration in which a semiconductor laminate (thin-film LED) having an LED structure epitaxially grown on a growth substrate is removed from the growth substrate.

[0074] The LED semiconductor layer 32 is not limited to a thin film LED, and may be a semiconductor light emitting laminate having a p-electrode and an n-electrode provided on one side thereof.

[0075] The LED semiconductor layer 32 includes an n-type semiconductor layer (second semiconductor layer) 33, a light-emitting layer 34, and a p-type semiconductor layer (first semiconductor layer) 35. The n-type semiconductor layer 33 and the p-type semiconductor layer 35 each include at least one semiconductor layer, and may include various semiconductor layers such as a barrier layer, a current diffusion layer, and a contact layer depending on the design for improving characteristics, etc.

[0076] The LED semiconductor layer 32 is a blue light-emitting semiconductor layer made of, for example, but not limited to, a GaN-based semiconductor layer. The light-emitting layer 34 has, for example, a single quantum well (SQW) or multiple quantum well (MQW) structure.

[0077] A p-electrode (first element electrode) 36A and an n-electrode (second element electrode) 36B are provided on the LED semiconductor layer 32. The p-electrode 36A is formed on the surface of the p-type semiconductor layer 35 and is connected to the p-type semiconductor layer 35 by ohmic contact.

[0078] In the LED semiconductor layer 32, a via 36V is formed from the surface of the p-type semiconductor layer 35 to the n-type semiconductor layer 33, and an n-electrode 36B is provided on the n-type semiconductor layer 33 exposed from the via 36V. n-type semiconductor layer 33 The connection is made by ohmic contact.

[0079] An element protective film 38 made of SiO2 is provided on the side and bottom surfaces (surfaces bonded to the wiring substrate 12) of the LED semiconductor layer 32 and on the inner wall surfaces of the vias 36V. The element protective film 38 protects the side surfaces of the LED semiconductor layer 32, as well as the p-electrode 36A, n-electrode 36B, and inner wall surfaces of the vias 36V.

[0080] The p-electrode 36A is made of an ITO / Ni / Pt / Ag layer in which a translucent conductive film of ITO (indium tin oxide) and a reflective film of Ni (nickel), Pt (platinum), and Ag (silver) are formed in this order on the p-type semiconductor layer 35. It is preferable that the p-electrode 36A be provided with a reflective film, but the reflective film need not be provided.

[0081] The n-electrode 36B is made of a Ti / Au layer in which Ti (titanium) and Au (gold) are formed in this order on the n-type semiconductor layer 33. Note that rhodium (Rh), palladium (Pd), or the like can be used instead of Au.

[0082] The materials and structures of the p-electrode 36A and the n-electrode 36B are not limited to those described above, and may be selected appropriately taking into consideration characteristics such as improvement in extraction efficiency by light reflection, ohmic characteristics, and device reliability (lifespan). (Joining of the wiring substrate 12 and the light-emitting functional layer 20) The wiring substrate 12 and the light-emitting functional layer 20 are bonded together by the bonding layer 41A and the bonding layer 41B, thereby forming the LED 11 shown in FIG. 5A.

[0083] More specifically, the first wiring electrode (p-wiring electrode) 22A of the wiring substrate 12 is joined to the p-electrode 36A of the light-emitting functional layer 20 by a bonding layer 41A. The second wiring electrode 22B of the wiring substrate 12 is joined to the n-electrode 36B of the light-emitting functional layer 20 by a bonding layer 41B. (Top and bottom surfaces of the wiring substrate 12 and the light-emitting functional layer 20) Fig. 6A is a plan view schematically showing the upper surface of the wiring substrate 12, i.e., the surface on the bonding side with the light-emitting functional layer 20. Fig. 6B is a plan view schematically showing the back surface of the wiring substrate 12, i.e., the surface on which the LEDs 11 are mounted on a circuit board such as a PCB board.

[0084] 6A, a plurality of circular second wiring electrodes 22B (n-wiring electrodes) (five in this embodiment) are arranged on the wiring substrate 12. The plurality of second wiring electrodes 22B are insulated from the first wiring electrodes (p-wiring electrodes) 22A by a protective film 28A, which is an insulating film.

[0085] The plurality of second wiring electrodes 22B may be formed in a number, position and size that allows good current diffusion and uniform light emission.

[0086] Moreover, the first wiring electrodes 22A are arranged over the entire surface of the upper Si layer 13 of the support substrate 12A, except for the areas of the plurality of second wiring electrodes 22B and the protective film 28A.

[0087] As shown in FIGS. 5B and 6A, the plurality of second wiring electrodes 22B are connected to the cathode 16B on the rear surface of the wiring substrate 12, and the first wiring electrode 22A is connected to the anode 16A.

[0088] Fig. 7A is a plan view schematically showing the upper surface of the light-emitting functional layer 20, i.e., the surface from which the emitted light LO is emitted, and the surface of the n-type semiconductor layer 33. Fig. 7B is a plan view schematically showing the back surface of the light-emitting functional layer 20 (the bonding surface with the wiring substrate 12). (Electrode conversion function of wiring board 12) The wiring substrate 12 has a so-called electrode conversion function. Specifically, as shown in Fig. 7B, one p-electrode 36A and multiple n-electrodes 36B (five in this embodiment) are provided on the back surface of the light-emitting functional layer 20 (the bonding surface with the wiring substrate 12).

[0089] It is sufficient to provide at least one p-electrode 36A and one n-electrode 36B, but it is preferable to provide a plurality of n-electrodes 36B. The number, size, and arrangement of the p-electrodes 36A and n-electrodes 36B can be designed appropriately depending on current spreading and light emission brightness.

[0090] On the other hand, as shown in Figure 6A, first wiring electrodes 22A and second wiring electrodes 22B are provided on the upper surface of the wiring substrate 12 (the bonding surface with the light-emitting functional layer 20) in numbers, sizes and arrangements corresponding to the p-electrode 36A and n-electrode 36B of the light-emitting functional layer 20.

[0091] Preferably, a plurality of n-electrodes 36B (n, where n is an integer of 2 or more) are provided. In this case, the plurality of n-electrodes 36B provided on the bottom surface of the light-emitting functional layer 20 are preferably arranged symmetrically. For example, as shown in FIG. 7B, the plurality of n-electrodes 36B are preferably arranged symmetrically with respect to the center point C or center line (e.g., symmetry line AA) of the light-emitting functional layer 20.

[0092] In addition, although the present embodiment has been described taking the case where the n-electrode 36B has a circular shape as an example, this is not limiting. The n-electrode 36B may have any shape that corresponds to the shape and size of the light-emitting functional layer 20, and the number, size, and arrangement of the n-electrodes 36B. Furthermore, the multiple n-electrodes 36B do not have to have the same shape.

[0093] Furthermore, as shown in FIG. 7B, it is preferable that the p-electrode 36A of the light-emitting functional layer 20 is formed as an electrode covering the entire surface of the p-type semiconductor layer 35, a so-called full-surface electrode, except for the formation region of the n-electrode 36B (i.e., the region of the n-electrode 36B and the region of the element protective film 38 that protects the edge of the n-electrode 36B).

[0094] As shown in FIG. 6B, one anode 16A and one cathode 16B are provided on the back surface of the wiring board 12 (i.e., the surface on which the LED 11 is mounted on the circuit board), and the p-electrode 36A and the n-electrode 36B of the light-emitting functional layer 20 are connected to them, respectively.

[0095] In other words, even if multiple p-electrodes 36A and / or n-electrodes 36B are provided in the light-emitting functional layer 20 to improve element characteristics such as current diffusion, the anode 16A and cathode 16B of the wiring board 12 can be consolidated into one each, making it easier to wire circuit boards such as PCB boards. [Another example of LED11] 8 is a cross-sectional view schematically illustrating a cross section of an LED 11A according to another embodiment of the present invention. The LED 11A differs from the LED 11 described above in that a metal electrode layer 13A is provided on the upper Si layer 13.

[0096] More specifically, the metal electrode layer 55 is electrically connected to the second wiring electrode 22B (n-wiring electrode). The metal electrode layer 55 functions as a current diffusion layer, and can improve current diffusion even when current diffusion is insufficient due to the resistivity of the upper Si layer 13 (n-Si layer). Therefore, the in-plane uniformity of light emission and the light emission efficiency can be improved. Note that the metal electrode layer 13A is preferably formed over the entire surface of the upper Si layer 13 except for the region where the second wiring electrode 22B is provided. [Size and Arrangement of Wavelength Conversion Element and LED] (1) Contact Arrangement A plurality of the semiconductor light-emitting devices 10 described above can be arranged in contact with each other. FIG. 9A is a top view showing a case where two semiconductor light-emitting devices 10 are arranged such that their side surfaces are in contact with each other.

[0097] FIG. 9B is a cross-sectional view showing a cross-section (a cross-section along line A-A in FIG. 9A) when two semiconductor light-emitting devices 10 of the same size are arranged in contact with each other. In this case, the width WC of the wavelength conversion element 50 is larger than the width WE of the LED 11 (WE < WC), and the side surfaces protrude beyond the side surfaces of the LED 11.

[0098] Therefore, the side surfaces of the wavelength conversion elements 50 of the two semiconductor light-emitting devices 10 can be arranged to be in contact with each other. That is, since the light emitted from the semiconductor light-emitting device 10 to the side is blocked by the light shielding film 55 of the wavelength conversion element 50, crosstalk and leakage can be suppressed even in the contact arrangement, and a light module with a high contrast on the light-emitting surface can be provided.

[0099] Note that a coating member or a sealing member may be filled between the LEDs 11 of the two semiconductor light-emitting devices 10 to form an underfill 57. As the sealing member, for example, a light-reflective or light-absorbing resin (so-called white resin or black resin) used for sealing a light module can be used.

[0100] As described above, by using the wavelength conversion element 50 having at least one side surface that protrudes beyond the wiring substrate 12, it is possible to arrange a plurality of semiconductor light emitting devices 10 in contact with each other.

[0101] Furthermore, in the semiconductor light emitting device 10 of this embodiment, the anode 16A and the cathode 16B that drive the LED 11 are provided on the back surface of the wiring substrate 12, so there is no need to provide electrodes for connection to the outside on the upper surface of the wiring substrate 12. Therefore, it is possible to realize a semiconductor light emitting device 10 in which the entire side surface of the wavelength conversion element 50 protrudes beyond the entire side surface of the wiring substrate 12.

[0102] In this embodiment, the semiconductor light emitting device 10 has a rectangular pillar shape, and the side surfaces of the wavelength conversion element 50 protrude beyond the side surfaces of the wiring substrate 12 on all four sides (see Figures 2A and 2B), so that all of the semiconductor light emitting devices 10 can be arranged so that they are in contact with each other.

[0103] 9C is a cross-sectional view showing another example of the arrangement of two semiconductor light emitting devices 10. That is, even if the width WC of the wavelength conversion element 50 and the width WE of the wiring substrate 12 are the same (WE=WC) in the two semiconductor light emitting devices 10, the semiconductor light emitting devices 10 can be arranged so as to be in contact with each other. In this case, an insulating film such as SiO2 is provided on the side surfaces of the wiring substrate 12 of the semiconductor light emitting devices 10 to prevent short-circuiting between them. (2) Spaced arrangement (adjacent arrangement) 10A is a top view showing two semiconductor light emitting devices 10 arranged with their side surfaces spaced apart. 10B, 10C, and 10D are diagrams showing the relationship between the width WC of the wavelength conversion element 50 and the width WE of the wiring substrate 12, respectively.<WC、WE=WC、WE> FIG. 1 is a cross-sectional view showing an arrangement of two semiconductor light emitting devices 10 having a WC relationship.

[0104] As described above, even when multiple semiconductor light emitting devices 10 are arranged with their sides spaced apart, the light from each semiconductor light emitting device 10 is blocked by the light-shielding film 55, so crosstalk and bleeding are suppressed even with the spaced arrangement, and an optical module with high contrast on the light-emitting surface can be provided.

[0105] The gap between the two semiconductor light emitting devices 10 may be filled with a sealing material or the like to form a side fill 58. Since the semiconductor light emitting device 10 is provided with a light-shielding film 55, the side fill 58 may be transparent, white, or black. [Second embodiment] FIG. 11 shows a top view (upper part) of a semiconductor light emitting module 60 according to the second embodiment of the present invention and a cross-sectional view (lower part) taken along line AA of the top view.

[0106] A semiconductor light emitting module 60 of the second embodiment has semiconductor light emitting devices 10(m, n) arranged in a matrix of m rows and n columns (m and n are natural numbers). The semiconductor light emitting module 60 also has a module substrate 61, which is a low temperature co-fired ceramics (LTCC) multilayer ceramic substrate. When the semiconductor light emitting devices 10(m, n) are not particularly distinguished from one another, they will be collectively referred to as semiconductor light emitting devices 10.

[0107] A frame body 62 is provided on the module substrate 61, and semiconductor light emitting devices 10(m, n) are mounted inside the frame body 62. Note that, although the semiconductor light emitting devices 10(m, n) are illustrated and described as being arranged adjacent to each other with a gap between their respective side surfaces, the semiconductor light emitting devices 10(m, n) may also be arranged in contact with each other.

[0108] The semiconductor light emitting devices 10(m, n) may emit light of the same color or different colors, and the output light intensities of the semiconductor light emitting devices 10(m, n) may be different from each other.

[0109] Furthermore, since the semiconductor light emitting devices 10(m, n) are shielded from light by the light-shielding film 55, a covering member does not necessarily have to be provided in the space 62K between the semiconductor light emitting devices 10(m, n). However, if a covering member is provided to protect the semiconductor light emitting devices 10(m, n) or to improve the appearance of the device, a covering member that is translucent, white, black, or the like can be appropriately selected and used.

[0110] The module substrate 61 has an upper surface wiring layer (first wiring layer) 61A, a buried wiring layer (second wiring layer) 61B, and a module bonding layer 61C provided on the bottom surface of the substrate. Also provided on the module substrate 61 are a first terminal 69A and a second terminal 69B (collectively referred to as terminals 69 when no particular distinction is needed) electrically connected to the semiconductor light emitting device 10(m, n). The first terminal 69A and the second terminal 69B are, for example, an anode and a cathode, respectively.

[0111] 11, the first terminals 69A and second terminals 69B (terminal pairs) in the first, second, etc. columns of each row are represented as 69A(1) and 69B(1), 69A(2) and 69B(2), etc. The same applies to terminal wirings 64A and 64B and buried wirings 68A and 68B, which will be described later, and when no particular distinction is made, they will be collectively referred to as terminal wirings 64 and buried wirings 68.

[0112] The components of the semiconductor light emitting module 60 will be described in detail below. The module substrate 61 can use ceramics such as alumina, zirconia, or aluminum nitride as the base material. Furthermore, silver (Ag), copper (Cu), or tungsten (W) can be used as the wiring material. Nickel / gold (Ni / Au) can be used as the surface wiring material. When ceramic is selected as the base material of the module substrate 61, it can be used in a wide range of temperature environments, for example, from a low temperature of -45°C to a high temperature of 120°C. If the usage environment is within a range of about room temperature ±30°C, glass fiber reinforced epoxy resin can also be used as the base material.

[0113] The module bonding layer 61C may be made of, for example, tungsten / nickel / gold (W / Ni / Au). When the semiconductor light emitting module 60 is bonded to a heat sink or a wiring board with an adhesive, the module bonding layer 61C does not need to be provided.

[0114] For example, silicone resin or epoxy resin can be used for the frame 62. When the frame 62 is to be white, for example, titanium oxide particles or alumina particles can be contained in the silicone resin or epoxy resin, and when the frame 62 is to be black, for example, black titanium oxide, black alumina, or carbon black can be contained. A thickener or a thixotropic agent may also be contained.

[0115] As shown in the cross-sectional view (lower row) of Figure 11, the upper wiring layer 61A of the module substrate 61 has mounting wiring 65A, 65B to which the anode 16A and cathode 16B of the semiconductor light-emitting device 10(m, n) are respectively joined and connected, and terminal wiring 64A, 64B to which the first terminal 69A and second terminal 69B (terminal pair) are connected.

[0116] The module substrate 61 also has a buried wiring layer 61B provided on the lower surface side of the upper surface wiring layer 61A. The buried wiring layer 61B has buried wirings 68A and 68B. The mounted wirings 65A and 65B (collectively referred to as mounted wirings 65 when no particular distinction is made) and terminal wirings 64A and 64B of the upper surface wiring layer 61A are connected to the buried wirings 68A and 68B of the buried wiring layer 61B through via wirings 61V.

[0117] 12 is a plan view schematically showing the wiring of the upper surface wiring layer 61A and the buried wiring layer 61B of the module substrate 61. For ease of explanation and understanding, they are shown in the upper and lower rows, respectively.

[0118] For example, the anode 16A and cathode 16B of the semiconductor light-emitting device 10(1, k) in the first row and kth column (k=1, 2, . . . , n) are connected to buried wirings 68A(k) and 68B(k), which are in turn connected to the first terminal 69A(k) and the second terminal 69B(k), respectively, through via wirings 61V.

[0119] That is, the semiconductor light emitting device 10(1, k) can be made to emit light by applying a voltage between the first terminal 69A(k) and the second terminal 69B(k). The same applies to the semiconductor light emitting devices 10(j, k) in each row (j=1, 2, . . . , m), and the light emission of each semiconductor light emitting device 10 can be controlled individually.

[0120] Therefore, by controlling the light emission of each semiconductor light emitting device 10, it is possible to adjust the light emission pattern and brightness of each semiconductor light emitting device 10. Furthermore, it is possible to select the light emission color for each semiconductor light emitting device 10, making it possible to perform, for example, a full RGB color display.

[0121] Furthermore, the semiconductor light emitting devices 10 of this embodiment have excellent light blocking properties, and even when arranged in contact with each other, there is very little light leakage or crosstalk, making it possible to provide a semiconductor light emitting module with high contrast on the light emitting surface. Also, it is possible to provide a semiconductor light emitting module in which semiconductor light emitting devices are arranged compactly.

[0122] Furthermore, in the light-emitting module of this embodiment, the anode and cathode on the back surface of the semiconductor light-emitting device 10 are bonded and connected to wiring mounted on the module substrate, eliminating the need for wire bonding. Furthermore, as described above, the wiring substrate 12 of this embodiment is provided with a built-in protective element. Wire bonding is also unnecessary for the protective element. Therefore, the manufacturing process is simple, and the light-emitting module is also excellent in reliability and lifespan.

[0123] Furthermore, it is possible to arrange a plurality of semiconductor light emitting devices 10 in contact with or adjacent to other semiconductor light emitting devices 10 all around the circumference of the semiconductor light emitting device 10. Therefore, it is possible to arrange the semiconductor light emitting devices 10 in contact with or adjacent to each other even in an arrangement of three or more rows.

[0124] In this specification, closely spaced arrangement refers to the case where semiconductor light emitting devices 10 are spaced apart by a narrow gap (200 μm or less). [Third embodiment] 13 is a top view showing a semiconductor light emitting module 70 according to a third embodiment of the present invention. The semiconductor light emitting module 70 has semiconductor light emitting devices 10(m, n) arranged in a matrix. Specifically, it has a 4×4 matrix structure (m=4, n=4) in which 16 semiconductor light emitting devices 10 emitting different colors of light are arranged in 4 rows and 4 columns.

[0125] More specifically, the semiconductor light emitting module 70 is configured by arranging a unit array 70E, each of which is made up of four semiconductor light emitting devices 10 arranged in a 2x2 matrix, in two rows and two columns. In the unit array 70E, two white (WW) semiconductor light emitting devices 10W are arranged at diagonal positions (=10(1,1), 10(2,2)), and a cyan (C) semiconductor light emitting device 10C (=10(2,1)) and a red (R) semiconductor light emitting device 10R (=10(1,2)) are arranged at the other diagonal position.

[0126] In each of the 16 semiconductor light emitting devices 10, four side surfaces of the wavelength conversion element 50 protrude beyond the side surfaces of the wiring substrate 12 (WE≦WC, see FIG. 2B). The 16 semiconductor light emitting devices 10 are arranged with narrow gaps (for example, narrow gaps of 20 to 200 μm) between each other.

[0127] The semiconductor light emitting devices 10 may be arranged with a narrow gap of 100 μm or less, or with an even narrower gap of 50 μm or less. The semiconductor light emitting devices 10 may be arranged so that the side surface of the wavelength conversion element 50 of each of the semiconductor light emitting devices 10 contacts the side surface of another wavelength conversion element 50, and so that the semiconductor light emitting devices 10 contact each other.

[0128] The semiconductor light-emitting module 70 is a high-color-rendering white light-emitting module in which WW (white), C (cyan), and R (red) semiconductor light-emitting devices 10 are arranged. The white semiconductor light-emitting device 10 (W), which is composed of blue and yellow, has low spectral intensities in cyan and red. Cyan and red are complementary colors, with cyan compensating for the spectral deficiency between blue and green-yellow, and red compensating for the spectral deficiency in the red region. This combination results in a high-color-rendering white light-emitting module. For example, when used as a light source for a vehicle lamp, it can be adjusted to produce white light with a low color temperature that is highly visible in foggy conditions. The semiconductor light-emitting devices 10 arranged in the unit array 70E can also be used as a color display module, such as RRGB.

[0129] Fig. 14 is a cross-sectional view schematically showing a cross section taken along line AA shown in Fig. 13. That is, it shows a cross section across two semiconductor light-emitting devices 10 arranged adjacent to each other, in this case, semiconductor light-emitting device 10C and semiconductor light-emitting device 10W arranged adjacent to it.

[0130] The semiconductor light emitting device 10 is mounted on a module substrate 71 by a bonding layer 73. More specifically, the module substrate 71 has an upper wiring layer 71A, a buried wiring layer 71B, and a module bonding layer 71C provided on the bottom surface of the substrate. The semiconductor light emitting device 10 is bonded to the upper wiring layer 71A and mounted.

[0131] The semiconductor light emitting devices 10C and 10W are bonded to the mounting wiring 65 of the upper wiring layer 71A and are arranged adjacent to each other. More specifically, the semiconductor light emitting devices 10C and 10W are arranged closely to each other with a narrow gap of 200 μm or less. The same is true for the semiconductor light emitting device 10R, and the semiconductor light emitting devices 10C, 10W, and 10R are arranged closely to each other with a narrow gap.

[0132] The semiconductor light emitting device 10 has the above-mentioned configuration, and the shielding of the wavelength conversion elements 50 of the adjacent semiconductor light emitting devices 10 is light film The lateral light leakage is prevented by the light source 55, regardless of whether it is the long wavelength light WL or the short wavelength light WS. In addition, it is possible to prevent light bleeding caused by the adjacent light emitting devices emitting pseudo light when each system is energized.

[0133] Furthermore, when the semiconductor light emitting devices 10 are arranged adjacent to or in contact with each other, two light-shielding coatings 55 are arranged between the light emitting functional layers 20 and wavelength converters 51 of adjacent semiconductor light emitting devices 10. For example, if the light leakage of one light-shielding coating is 0.05 (5%), the light leakage is reduced to 0.0025 (0.25%) by the two light-shielding coatings 55. Furthermore, by placing a light-shielding (reflective or absorptive) covering member 75 between adjacent semiconductor light emitting devices 10, the light leakage can be further reduced.

[0134] The semiconductor light emitting module 70 of this embodiment offers the same advantages as the semiconductor light emitting module of the second embodiment. Specifically, it allows for a plurality of semiconductor light emitting devices to be arranged closely together or in contact with each other, and allows for a close or contact arrangement in three or more rows. Furthermore, it provides excellent light blocking between light emitting devices, preventing light bleeding due to pseudo-emission of adjacent semiconductor light emitting devices 10.

[0135] Furthermore, according to the semiconductor light emitting module 70 of this embodiment, a plurality of semiconductor light emitting devices emitting one emission color and a plurality of semiconductor light emitting devices emitting a different emission color can be arranged alternately in a checkerboard pattern. That is, even with such an arrangement, a semiconductor light emitting module can be provided that has excellent light blocking between the light emitting devices and suppresses bias in the emission color of each semiconductor light emitting device. Also, a light emitting module with high color rendering properties can be provided.

[0136] In the semiconductor light emitting module 70, the semiconductor light emitting devices 10(m, n) are preferably arranged in 3 rows and 3 columns or more (3≦m and 3≦n).

[0137] Furthermore, the semiconductor light emitting module 70 is preferably a module with an RRGB matrix arrangement (R: red, G: green, B: blue) or a light emitting module with an RGGB matrix arrangement.

[0138] Furthermore, it is preferable that the semiconductor light emitting module 70 includes at least two pairs of semiconductor light emitting devices 10 of two complementary colors, i.e., three pairs of blue (B) and yellow (Y), red (R) and cyan (C), and green (G) and purple (P).

[0139] Furthermore, it is preferable that the semiconductor light emitting module 70 includes semiconductor light emitting devices 10 of four colors: two colors, blue (B) and yellow (Y), and two colors complementary to the blue (B) and yellow (Y) semiconductor light emitting devices 10, respectively.

[0140] As described above in detail, according to the present invention, it is possible to provide a light-emitting device that has high performance in blocking light emitted from the light-emitting element and light emitted from the wavelength conversion element without providing separate covering members on the side surfaces of the light-emitting element. It is also possible to provide a light-emitting module that allows multiple light-emitting devices to be arranged closely or in contact with each other, has excellent light-blocking properties between the light-emitting devices, and suppresses crosstalk. Furthermore, it is possible to provide a light-emitting module with high color rendering properties. [Explanation of symbols]

[0141] 10, 10(m, n), 10C, 10R, 10W: Semiconductor light-emitting device 11, 11A: Light emitting element 12: Wiring board 12A: Support board 13A: Metal electrode layer 16A: Anode 16B: Cathode 17: Protective element 20: Light-emitting functional layer 32: LED semiconductor layer 33: n-type semiconductor layer 34: Light-emitting layer 35: p-type semiconductor layer 50: Wavelength conversion element 51: Wavelength converter 55: Light-shielding film 55R: Rim section 55S: Recess 57: Adhesive layer 60,70: Semiconductor light emitting module 61, 71: Module board 61A, 71A: Top wiring layer 61B, 71B: Buried wiring layer 61V: Via wiring 62: Frame 64A, 64B: Terminal wiring 65A, 65B: Mounted wiring 68A, 68B: Buried wiring 69A, 69B: Terminals 70E: Unit array of semiconductor light emitting device 75: Covering material

Claims

1. a wiring substrate having a p-electrode and an n-electrode provided on a rear surface of the substrate; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to an upper surface of the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer, At least a part of a side surface of the light-transmitting optical element protrudes beyond a side surface of the wiring substrate.

2. The semiconductor light emitting device according to claim 1 , wherein at least a portion of the frame portion of the light-shielding film is in contact with the upper surface of the wiring substrate.

3. a wiring substrate having a p-electrode and an n-electrode provided on a rear surface of the substrate; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to an upper surface of the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer, At least a part of the frame portion of the light-shielding film is in contact with the upper surface of the wiring substrate.

4. 4. The semiconductor light emitting device according to claim 1, wherein the light blocking film is provided over the entire side surface of the translucent optical body.

5. 5. The semiconductor light emitting device according to claim 1, wherein the translucent optical element has a rectangular shape, and all four side surfaces of the translucent optical element extend beyond the side surfaces of the wiring substrate.

6. The semiconductor light emitting device according to claim 1 , wherein the light emitting functional layer has a reflective layer on a surface facing the wiring substrate.

7. 7. The semiconductor light emitting device according to claim 1, wherein the light-transmitting optical element is a wavelength conversion element.

8. 8. The semiconductor light emitting device according to claim 1, wherein a protective element is built into the wiring substrate.

9. 9. The semiconductor light-emitting device according to claim 1, wherein the light-shielding film is a dielectric multilayer film and / or a ceramic film.

10. A semiconductor light emitting module comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 9, The semiconductor light emitting module is configured such that the side surfaces of the light-transmitting optical elements of the plurality of semiconductor light emitting devices are adjacent to each other.

11. A semiconductor light emitting module comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 9, The plurality of semiconductor light emitting devices are arranged such that the side surfaces of the light-transmitting optical elements are in contact with each other.

12. A semiconductor light emitting module including a plurality of semiconductor light emitting devices, Each of the plurality of semiconductor light emitting devices comprises: a wiring substrate having a p-electrode and an n-electrode provided on a rear surface of the substrate; a light-emitting functional layer including a p-type semiconductor layer connected to the p-electrode, a light-emitting layer, and an n-type semiconductor layer connected to the n-electrode, and bonded to an upper surface of the wiring substrate; a light-transmitting optical element provided on a side surface of a plate-shaped light-transmitting optical body, the light-transmitting optical element having a light-shielding film covering a peripheral edge portion of a rear surface of the light-transmitting optical body and having an annular frame portion formed on the peripheral edge portion; an adhesive layer that adheres the translucent optical element to the upper surface of the wiring substrate so that the light-emitting functional layer is inserted into a recess inside the frame body portion, the recess is filled with the adhesive layer, the plurality of semiconductor light emitting devices are arranged such that the side surfaces of the light-transmitting optical elements are in contact with each other; Semiconductor light emitting module.

13. 13. The semiconductor light emitting module according to claim 10, wherein the plurality of semiconductor light emitting devices include at least two semiconductor light emitting devices each having a different emission color.

14. A semiconductor light emitting module comprising a plurality of semiconductor light emitting devices according to any one of claims 1 to 9, or the semiconductor light emitting module according to claim 11, The semiconductor light emitting module includes a plurality of semiconductor light emitting devices arranged in a matrix of at least three rows and three columns.

15. 15. The semiconductor light emitting module according to claim 14, A semiconductor light emitting module that is a module with an RRGB matrix arrangement (R: red, G: green, B: blue) or a light emitting module with an RGGB matrix arrangement.

16. The semiconductor light emitting module according to claim 13, A semiconductor light emitting module including at least two pairs of semiconductor light emitting devices in a combination of two complementary colors.

17. 17. The semiconductor light-emitting module according to claim 16, wherein the combinations of two complementary colors are three pairs of blue (B) and yellow (Y), red (R) and cyan (C), and green (G) and purple (P).

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