Semiconductor light-emitting device

Abstract

To provide a semiconductor light emitting device that is capable of shading light emitted from the sides of the semiconductor light emitting element and light guide, and protecting the semiconductor light emitting element and light guide from the outside world, while being highly reliable and easy to manufacture.SOLUTION: It has a light emitting device assembly 10A having a support substrate having a first and second electrode on the bottom, a semiconductor light emitting element 11 having a light emitting semiconductor layer provided on the support substrate and connected to the first and second electrodes, and a light guide 13 bonded on the emitting surface of the semiconductor light emitting element by an adhesive layer 12, and a cylindrical heat shrinkable covering member 14 made of heat shrinkable resin covering the sides of the light emitting device assembly.SELECTED DRAWING: Figure 1C

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having a semiconductor light emitting element such as a light emitting diode (LED). [Background technology]

[0002] In recent years, semiconductor light-emitting elements such as light-emitting diodes (LEDs) have been arranged and used in multiple devices in order to achieve higher output and light distribution control.

[0003] For example, adaptive driving beam (ADB) headlamps are known for their variable light distribution, which controls the light distribution according to the driving environment. Also known are high-power LED packages for lighting and LED packages for information and communication devices with high-density LED arrangements.

[0004] However, in general, in a semiconductor light emitting device in which multiple semiconductor light emitting elements are arranged side by side, a portion of the light emitted from the conductive elements may propagate to the non-conductive elements, and such light leakage and optical crosstalk have been problems in various application fields in which multiple semiconductor light emitting elements are arranged and used.

[0005] For example, Patent Document 1 discloses providing a light-reflecting layer made of a dielectric multilayer film on the side surfaces of a substrate and a light-emitting element. Patent Document 2 discloses a light-emitting element that is made of a dielectric multilayer film and has a reflective member that covers the side surfaces of a semiconductor laminate, thereby suppressing light leakage to the side from the upper end of the side surface of the semiconductor laminate.

[0006] Patent Document 3 discloses that a fluorescent substance is dispersed and a reflective layer made of an optical multilayer film is provided on the side surface of a sealing resin that seals a light-emitting diode.

[0007] Furthermore, Patent Document 4 discloses a semiconductor electronic component in which a semiconductor chip is surrounded by a heat-shrinkable tube and provided with an insulating coating in order to prevent short circuits of the semiconductor chip due to contact with bonding wires during the manufacturing process. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-225862 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-119063 [Patent Document 3] Japanese Patent Application Laid-Open No. 2006-351808 [Patent Document 4] Japanese Patent Application Laid-Open No. 2001-168132 Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been made in consideration of the above points, and provides a semiconductor light-emitting device that can block light emitted from the side surfaces of the semiconductor light-emitting element and the light guide, protect the semiconductor light-emitting element and the light guide from the outside, and has excellent airtightness and high reliability.Furthermore, it is possible to provide a semiconductor light-emitting device that is easy to manufacture, low cost, and has a simple structure. [Means for solving the problem]

[0010] A semiconductor light emitting device according to one embodiment of the present invention comprises: a support substrate having a first electrode and a second electrode on a bottom surface thereof, and a semiconductor light emitting element provided on the support substrate and having a light emitting semiconductor layer connected to the first electrode and the second electrode; a light emitting element assembly having a light guide adhered onto the light emitting surface of the semiconductor light emitting element by an adhesive layer; a cylindrical heat-shrinkable covering member made of a heat-shrinkable resin that covers a side surface of the light-emitting element assembly; It has the following characteristics. [Brief explanation of the drawings]

[0011] [Figure 1A] 1 is a plan view schematically showing the upper surface of a semiconductor light emitting device 10 according to a first embodiment of the present invention. [Figure 1B] 1 is a diagram schematically illustrating a side surface of a semiconductor light emitting device 10. FIG. [Figure 1C] 1B is a cross-sectional view schematically showing a cross section of the semiconductor light-emitting device 10 taken along line AA in FIG. 1A. [Figure 1D] 2 is a partially enlarged cross-sectional view showing a cross section of a part W of a side portion of the semiconductor light-emitting device 10. FIG. [Figure 2A] 2 is a plan view showing the upper surface of the semiconductor light emitting element 11. FIG. [Figure 2B] 2 is a plan view schematically showing the back surface of the semiconductor light emitting element 11. FIG. [Figure 2C] FIG. 2B is a cross-sectional view showing a cross section taken along line AA shown in FIG. 2A. [Figure 3A] 1A and 1B are a top view and a cross-sectional view showing a light-emitting element assembly 10A set in a covering molding machine 100 and a tubular covering member 14 made of heat-shrinkable resin 14A. [Figure 3B] 1A and 1B are a top view and a cross-sectional view showing a light-emitting element assembly 10A against which a pair of pressing dies 101 are pressed while the coating molding machine 100 is heated. [Figure 3C] 1A and 1B are a top view and a cross-sectional view showing the manufactured semiconductor light-emitting device with the pressing mold 101 opened. [Figure 4A] FIG. 2 is a cross-sectional view showing a semiconductor light-emitting device 50 according to a modification of the first embodiment. [Figure 4B] 4B is a partially enlarged cross-sectional view showing a cross section of a part W of a side portion of the semiconductor light-emitting device 50 shown in FIG. 4A. FIG. [Figure 5A] FIG. 10 is a plan view schematically showing the upper surface of a semiconductor light emitting device 70 according to a second embodiment of the present invention. [Figure 5B] 2 is a diagram schematically illustrating a side surface of a semiconductor light emitting device 70. FIG. [Figure 5C] 5B is a cross-sectional view schematically showing a cross section of the semiconductor light-emitting device 70 taken along line AA in FIG. 5A. [Figure 5D] 2 is a partially enlarged cross-sectional view showing a cross section of a part W of a side portion of the semiconductor light-emitting device 70. FIG. [Figure 6] 10 is a partially enlarged cross-sectional view showing a cross section of a part W of a side wall portion of a semiconductor light-emitting device 75 according to a modified example of the second embodiment. FIG. [Figure 7A] 10A to 10C are diagrams illustrating a first individual molding method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment. [Figure 7B] 10A and 10B are diagrams illustrating an individual molding method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment. [Figure 8A] 10A and 10B are diagrams showing a continuous molding method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment. [Figure 8B] 8B is a top view taken along line EE in FIG. 8A. [Figure 8C] 8B is a top view taken along line FF in FIG. 8A. DETAILED DESCRIPTION OF THE INVENTION

[0012] In the following, preferred embodiments of the present invention will be described, but these may be modified and combined as appropriate. In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals.

[0013] [First embodiment] (1) Structure of semiconductor light-emitting device Fig. 1A is a plan view schematically showing the top surface of a semiconductor light emitting device 10 according to a first embodiment of the present invention. Fig. 1B is a view schematically showing a side surface of the semiconductor light emitting device 10. Fig. 1C is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 taken along line AA in Fig. 1A. Fig. 1D is a partially enlarged cross-sectional view showing an enlarged cross section of a portion W of the side of the semiconductor light emitting device 10 shown in Fig. 1C.

[0014] In this embodiment, the semiconductor light emitting device 10 has a semiconductor light emitting element 11 which is a light emitting diode (LED), an adhesive layer 12 which is a light-transmitting layer made of a thermosetting resin, a phosphor plate 13 which is a light guide, and a covering member 14.

[0015] More specifically, the semiconductor light emitting element 11 and the phosphor plate 13 are bonded together by a light-transmitting adhesive layer 12 to form a light emitting element assembly 10A. The light emitting element assembly 10A has a rectangular pillar shape as a whole.

[0016] As shown in FIG. 1C, the semiconductor light emitting device 10 has pad electrodes 34A and 34B on the back surface of the semiconductor light emitting element 11 that can be directly mounted on a circuit board.

[0017] The shape of the light-emitting element assembly 10A is not limited to a rectangular columnar shape, and may be a cylindrical shape (including an elongated columnar shape) or a polygonal columnar shape. Furthermore, the semiconductor light-emitting element 11 or the phosphor plate 13 (light guide) may have a polygonal columnar shape with chamfered corners.

[0018] The covering member 14 preferably covers all side surfaces of the light-emitting element assembly 10A. The adhesive layer 12 is preferably filled between the semiconductor light-emitting element 11 and the phosphor plate 13 (light guide). The adhesive layer 12 is preferably a thermosetting resin, but a curable resin such as an ultraviolet-curable resin may also be used.

[0019] (2) Covering material As shown in Figures 1C and 1D, in this embodiment, the covering member 14 (hereinafter also referred to as the first covering member) consists of a tubular heat-shrinkable resin 14A with adhesive resin 14G applied to its inner surface, and is tightly adhered to the side of the light-emitting element assembly 10A by the thermal shrinkage of the heat-shrinkable resin 14A.

[0020] Furthermore, the covering member 14 has a wraparound portion 14R that wraps around and adheres to the back surface of the semiconductor light emitting element 11. The wraparound portion 14R of the covering member 14 covers the peripheral edge of the back surface of the semiconductor light emitting element 11.

[0021] The heat-shrinkable resin 14A may be a resin that has light reflectivity, such as a white resin (dye or pigment) or a resin that can be heat-shrinked, such as a fluororesin with reflective particles such as TiO2 particles dispersed in the resin, silicone resin, epoxy resin, acrylic resin, etc. Fluororesin is particularly suitable because it has excellent airtightness, such as breathability and water resistance.

[0022] For example, examples of fluororesins include PTFE (polytetrafluoroethylene), PFA (perfluoroalkoxyalkane), FEP (perfluoroethylene propene copolymer), and ETFE (ethylene tetrafluoroethylene copolymer).

[0023] Heat-shrinkable tubing is manufactured by, for example, molding resin into a tube, cross-linking the polymer with an electron beam, expanding it, and then cooling it to set the shape. It then shrinks by heating, returning to its original shape. Heat-shrinkable resin is made by stretching resin that has been primarily molded into a tube shape, and has high strength against tearing in the plane direction. It also stretches, making it resistant to tearing due to thermal history.

[0024] Furthermore, referring to FIG. 1D, the adhesion can be improved by providing irregularities on the outer surface 13E of the phosphor plate 13 and / or the inner surface 14I of the covering member 14 to roughen them.

[0025] In the above description, the heat-shrinkable resin 14A has light reflectivity, but the heat-shrinkable resin may have light-absorbing particles dispersed therein and have light-blocking properties due to its light-absorbing properties.

[0026] (3) Light guide and adhesive layer The phosphor plate 13, which is a light guide, also functions as a sealing material for the upper surface side of the semiconductor light emitting device 10. Light emitted from the semiconductor light emitting element 11 enters the phosphor plate 13 from the bottom surface of the phosphor plate 13, and the emitted light LO of the semiconductor light emitting device 10 is emitted from the surface (light emitting surface 13S) of the phosphor plate 13.

[0027] For example, the semiconductor light emitting element 11 emits blue light, and the phosphor plate 13 converts the blue light from the semiconductor light emitting element 11 into yellow light. White light, which is a mixture of blue and yellow light, is emitted as the emitted light LO from the semiconductor light emitting device 10. Furthermore, if a phosphor plate 13 that converts almost all of the blue light from the semiconductor light emitting element 11 into yellow light is used as the phosphor plate 13, the emitted light LO from the semiconductor light emitting device 10 can also be yellow light. Similarly, it can also be red light or infrared light.

[0028] The light-guiding member 13 can be made of a ceramic phosphor plate made of alumina and YAG:Ce or the like, a glass phosphor plate made of glass and α- or β-sialon or the like, a resin phosphor plate made of silicone resin and silicate:Ce or the like, or a single crystal or polycrystalline phosphor plate made of YAG and Ce or the like.

[0029] Instead of the phosphor plate 13, a light-transmitting glass plate, a sapphire plate, a resin plate, or a light-guiding member such as a plate with a lens and a diffractive optical element may be used.

[0030] The adhesive layer 12 can be made of a resin that transmits the light emitted by the semiconductor light-emitting element 11, such as a translucent silicone resin, epoxy resin, or acrylic resin. Alternatively, low-melting-point glass, a nano-metal oxide sintered body, or the like can be used. It is also possible to use a composite in which a porous nano-metal oxide sintered body is impregnated with a resin or low-melting-point glass. A diffusing agent or a light conversion material can also be added to the adhesive layer 12.

[0031] (4) Semiconductor light-emitting element The semiconductor light emitting device 11 will be described in detail below with reference to the drawings. Fig. 2A is a plan view showing the top surface of the semiconductor light emitting device 11. For the purpose of explaining the internal electrode structure, the electrodes inside the device are also shown with dashed lines.

[0032] Fig. 2B is a plan view schematically showing the back surface of the semiconductor light emitting element 11, i.e., the surface on which the semiconductor light emitting element 11 is mounted on a circuit board such as a printed circuit board (PCB), and Fig. 2C is a cross-sectional view showing a cross section taken along line AA shown in Fig. 2A.

[0033] 2C is a cross-sectional view showing a schematic and detailed example of the configuration of semiconductor light emitting element 11. Semiconductor light emitting element 11 has a configuration in which an LED semiconductor layer 20, which is a so-called thin-film LED, is attached to a support substrate 31 as a light emitting semiconductor layer.

[0034] More specifically, the LED semiconductor layer (light-emitting semiconductor layer) 20 has a configuration in which a semiconductor layer (thin film LED) having an LED structure epitaxially grown on a growth substrate is removed from the growth substrate and attached to a support substrate 31. In this embodiment, a p-type semiconductor layer, which is the topmost grown layer, is attached to the support substrate 31 as the lower surface, and an n-type semiconductor layer is used as the surface layer.

[0035] The support substrate 31 is a conductive n-type substrate made of Si (silicon) doped with P (phosphorus) or As (arsenic) or the like.

[0036] The LED semiconductor layer 20 includes an n-type semiconductor layer (semiconductor layer of second conductivity type) 21, a light-emitting layer 22, and a p-type semiconductor layer (semiconductor layer of first conductivity type) 23. The n-type semiconductor layer 21 and the p-type semiconductor layer 23 each include at least one semiconductor layer, and may include various semiconductor layers depending on the purpose, such as an electron or hole barrier layer, a current diffusion layer, or a contact layer.

[0037] In this embodiment, an example will be described in which the first conductivity type is p-type and the second conductivity type is n-type, but the first conductivity type may be n-type and the second conductivity type may be p-type.

[0038] The LED semiconductor layer 20 is, for example, a blue-emitting LED semiconductor layer made of a GaN-based semiconductor layer, but is not limited to this. The light-emitting layer 22 has, for example, a single quantum well (SQW) or multiple quantum well (MQW) structure.

[0039] The LED semiconductor layer 20 has a p-electrode 25A and an n-electrode 25B. The p-electrode 25A is joined to a substrate p-electrode 32A by a conductive p-side bonding layer 26, and the n-electrode 25B is joined to a substrate n-electrode 32B by a conductive n-side bonding layer 27.

[0040] The p-electrode 25A is made of an ITO / Ni / Pt / Ag layer in which an indium tin oxide (ITO), nickel (Ni), platinum (Pt), and silver (Ag) reflective film are formed in this order on the p-type semiconductor layer 23. The n-electrode 25B is made of a (Ti or Ni) / Pt / Au layer in which titanium (Ti) or nickel (Ni), platinum (Pt), and gold (Au) are formed in this order on the n-type semiconductor layer 21.

[0041] The materials and structures of the p-electrode 25A and the n-electrode 25B are not limited to those described above. Any suitable structure can be selected taking into consideration characteristics such as improvement in extraction efficiency by light reflection, ohmic characteristics, and element reliability (lifespan).

[0042] An element protection film 28A made of SiO2 is provided on the side surface of the LED semiconductor layer 20. Furthermore, a substrate protection film 28B made of SiO2 is provided on the surface of the support substrate 31 (the bonding side with the LED semiconductor layer 20).

[0043] Substrate p electrode 32A is connected to conductive via 33, and is electrically connected to anode electrode 34A (first electrode) on the back surface of semiconductor light emitting device 10 through conductive via 33. Substrate p electrode 32A, conductive via 33, and anode electrode 34A are insulated from supporting substrate 31 by substrate insulating film 35 made of SiO2.

[0044] Substrate n-electrode 32B is electrically connected to cathode electrode 34B (second electrode) on the back surface of semiconductor light emitting device 10 via support substrate 31, which is a conductive Si substrate.

[0045] When a current is applied to the anode electrode 34A and the cathode electrode 34B from a circuit board or the like (not shown) on which the semiconductor light emitting element 11 is mounted, the semiconductor light emitting element 11 emits light, and the light is emitted from the surface 21S of the n-type semiconductor layer 21 (direct light). Furthermore, light emitted from the light emitting layer 22 in the opposite direction to the direct light is reflected by the p-electrode 25A and emitted from the surface 21S of the n-type semiconductor layer 21 (reflected light). In other words, the direct light and reflected light are emitted from the surface 21S of the n-type semiconductor layer 21 as emitted light LE from the semiconductor light emitting element 11.

[0046] Although the LED semiconductor layer 20 is a thin-film LED in the above example, the present invention is not limited to this. The LED semiconductor layer 20 may be a flip-chip type LED semiconductor layer in which a light-transmitting substrate is used as a growth substrate and the topmost growth layer (e.g., a p-type semiconductor layer) is used as an emission surface.

[0047] (5) Manufacturing Method of Semiconductor Light-Emitting Device 10 According to First Embodiment 3A to 3C, a manufacturing process for the semiconductor light emitting device 10 will be described. In each figure, a top view is shown on the upper side, and a cross-sectional view taken along the center line of the light emitting element assembly 10A is shown on the lower side.

[0048] First, as shown in Fig. 3A, a tubular covering member 14 (see Fig. 1D) made of a light-emitting element assembly 10A and heat-shrinkable resin 14A with adhesive 14G applied to its inner surface is set in a covering molding machine 100. At this time, as shown in the cross-sectional view, the heat-shrinkable resin 14A is arranged in a size and position that allows it to abut against the entire side surface and the peripheral edge of the bottom of the light-emitting element assembly 10A during molding pressure.

[0049] A protective sheet 104 is attached to the electrode pads 34A and 34B of the light-emitting element assembly 10A, and is fitted into a recess in the base 103 for positioning.

[0050] 3B, while the covering molding machine 100 is heated, a pair of L-shaped pressing dies 101 are pressed against the light-emitting element assembly 10A from both sides (arrows in the figure). This causes the covering member 14 to adhere tightly to the side surfaces of the light-emitting element assembly 10A without leaving any gaps. In addition, the adhesive 14G applied to the heat-shrinkable resin 14A hardens due to heating, and the heat-shrinkable resin 14A adheres to the side surfaces and the peripheral edge of the bottom of the light-emitting element assembly 10A.

[0051] 3C, the pressing mold 101 is opened (arrow in the figure) while the covering molding machine 100 is cooled. Through the above steps, the semiconductor light-emitting device 10 is manufactured, in which the covering member 14 is tightly attached to the peripheral edges of the side and bottom of the light-emitting element assembly 10A.

[0052] (6) Modification of the First Embodiment FIG. 4A is a cross-sectional view showing a semiconductor light-emitting device 50 according to a modified example of the first embodiment, and FIG. 4B is a partially enlarged cross-sectional view showing an enlarged cross-section of a portion W of the side of the semiconductor light-emitting device 50 shown in FIG. 4A.

[0053] In this modified example, a covering member 16 having an inner covering member 16A and an outer covering member 16B is provided on the side surface of the light-emitting element assembly 10A. That is, as shown in Fig. 4A, the outer covering member 16B made of heat-shrinkable resin is provided in close contact with the outer peripheral side surface of the inner covering member 16A. That is, the semiconductor light-emitting device 50 has a covering member 16 made of two layers of heat-shrinkable resin.

[0054] More specifically, an inner covering member 16A and an outer covering member 16B are laminated, and a tubular heat-shrinkable resin 16 having adhesive resin 14G applied to the inner surface of the inner covering member 16A is adhered tightly to the side of the light-emitting element assembly 10A by heat shrinkage.

[0055] The inner covering member 16A is made of a light-reflective heat-shrinkable resin, such as a white resin, and the outer covering member 16B is made of a light-absorbing heat-shrinkable resin, such as a black resin.

[0056] In this way, by using a heat-shrinkable resin as the covering member 16, in which a light-reflective inner covering member and a light-absorbing outer covering member are laminated, high light-blocking properties are achieved against both light from the light-emitting element assembly 10A and light from outside the covering member.

[0057] As described above, the semiconductor light emitting devices 10 and 50 of the first embodiment can block light emitted from the side surfaces of the semiconductor light emitting element and the light guide, protect the semiconductor light emitting element and the light guide from the outside world, and provide a highly reliable semiconductor light emitting device with excellent airtightness.Furthermore, a semiconductor light emitting device with a simple structure that is easy to manufacture and low cost can be provided.

[0058] [Second embodiment] (1) Structure of semiconductor light-emitting device Fig. 5A is a plan view schematically showing the top surface of a semiconductor light emitting device 70 according to a second embodiment of the present invention. Fig. 5B is a view schematically showing a side surface of the semiconductor light emitting device 70. Fig. 5C is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 70 taken along line AA in Fig. 5A. Fig. 5D is a partially enlarged cross-sectional view showing an enlarged cross section of a portion W of a side portion of the semiconductor light emitting device 70.

[0059] As shown in Figures 5A to 5C, in this embodiment, the semiconductor light-emitting device 70 has a covering member 16 having a third covering member 71 (inner covering member) and a first covering member 72 (outer covering member) provided on the side of the light-emitting element assembly 10A.

[0060] The third covering member 71 is a cured resin, i.e., a molded body, such as a white resin having light reflectivity, and the first covering member 72 is formed using a tubular covering member made of a heat-shrinkable resin as described in the first embodiment.

[0061] In this embodiment, the first covering member 72 is made of a light-reflecting resin, but the resin can be selected from a variety of resins such as a light-absorbing resin or a colored resin.

[0062] 5D, a third adhesive layer 71G is provided on the inner surface of the third covering member 71, bonding the third covering member 71 to the phosphor plate 13. Also, a first adhesive layer 72G is provided on the inner surface of the first covering member 72, bonding the first covering member 72 to the third covering member 71.

[0063] More specifically, the light-emitting element assembly 10A has a rectangular columnar shape, and a third covering member 71 having a cylindrical outer surface and an arc-shaped (or semi-cylindrical) cross section is provided in close contact with each of the four side surfaces. Here, the semi-cylindrical side surfaces (outer surfaces) of the four third covering members 71 collectively form a single closed cylindrical side surface. Then, a first covering member 72 is provided in close contact with the cylindrical side surfaces of the four third covering members 71.

[0064] In other words, the rectangular columnar light-emitting element assembly 10A is inscribed in the cylindrical first covering member 72, and the third covering member 71 having an arc-shaped cross section is inserted between the first covering member 72 and the light-emitting element assembly 10A, and the third covering member 71 is provided in close contact with the first covering member 72 and the light-emitting element assembly 10A.

[0065] The first covering member 72 only needs to have a substantially cylindrical shape. That is, even if the first covering member 72 has a concave or convex portion at the connection portion between adjacent third covering members 71 or at the portion where the light-emitting element assembly 10A is inscribed in the first covering member 72, it is sufficient that the first covering member 72 has a cylindrical shape as a whole. Even in such cases, the first covering member 72, which is a heat-shrinkable tube, can cover the light-emitting element assembly 10A and the third covering member 71 evenly without gaps by heat shrinking.

[0066] Although the third covering member 71 (inner covering member) has an arc-shaped cross section in the above description, the present invention is not limited to this. It is sufficient that the third covering member 71, which is a resin molded body, has a shape that allows it to be inserted between the first covering member 72 (outer covering member) and the light-emitting element assembly 10A and fill the space between the first covering member 72 and the light-emitting element assembly 10A due to thermal contraction of the first covering member 72, which is a heat-shrinkable resin. Therefore, in this case, the first covering member 72 can have any shape, including a polygonal pillar shape.

[0067] In this embodiment, by inserting a third covering member 71 having an arc-shaped cross section between the outer surface of the light-emitting element assembly 10A and the heat-shrinkable tube (first covering member 72), the covering molding machine used in the first embodiment becomes unnecessary, and the semiconductor light-emitting device 70 can be manufactured more easily.

[0068] (2) Modification of the second embodiment FIG. 6 is a partially enlarged cross-sectional view showing a cross section of a part W of a side of a semiconductor light-emitting device 75 according to a modification of the second embodiment.

[0069] In this modified example, the outer surface of the third covering member 71A, which is the inner covering member, has multiple irregularities (or grooves) 77, and no adhesive is provided between the third covering member 71A and the first covering member 72.

[0070] The tubular first covering member 72 made of heat-shrinkable resin is fitted into the recesses 77 of the third covering member 71A during heat molding, and is tightly adhered to the third covering member 71A.

[0071] (3) First manufacturing method of semiconductor light emitting device (individual molding method) 7A and 7B are diagrams showing an example of the individual molding method, which is a first manufacturing method suitable for manufacturing the semiconductor light-emitting device 70 of the second embodiment. Figures 7A and 7B show the state before and after heat molding, respectively. In each figure, the upper side shows a cross-sectional view taken along the center line of the light-emitting element assembly 10A, and the lower side shows a top view taken along line DD.

[0072] 7A, in the covering molding machine 200, the guide tube 201 has a rectangular tube shape corresponding to the side surface of the rectangular light-emitting element assembly 10A. The overlapping third covering member 71 and first covering member 72 are fed along the guide tube 201. Note that the first adhesive layer 71G and the second adhesive layer 72G (see FIG. 5D) are not shown.

[0073] After the third covering member 71 and the first covering member 72 are guided onto the base 103, the guide tube 201 is pulled upward (Figure 7A, cross-sectional view), and the third covering member 71 and the first covering member 72 are positioned with gaps between them and the four side surfaces of the light-emitting element assembly 10A (Figure 7A, top view).

[0074] Next, the third covering member 71 and the first covering member 72 are cut by a cutter CT at the same height as the light-emitting element assembly 10A (FIG. 7A, cross-sectional view).

[0075] Next, when the first covering member 72 is heated by the hot air nozzle 203, the first covering member 72 shrinks, and the third covering member 71 is tightly adhered to the four side surfaces of the light-emitting element assembly 10A, as shown in FIG. 7B. After the thermal shrinkage, the adhesive layer is thermally cured by further heating. The manufacturing process of the semiconductor light-emitting device 70 is completed through the above steps.

[0076] (4) First manufacturing method of semiconductor light emitting device (continuous molding method) Fig. 8A is a diagram showing an example of a continuous molding method, which is a second manufacturing method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment. Fig. 8B and Fig. 8C are top views seen from the planes along the lines EE and FF in Fig. 8A.

[0077] Referring to FIG. 8A, in a coating molding machine 300, the light-emitting element assembly 10A is fed downward (arrow in the figure) along a first guide pipe 301 having a rectangular pipe shape corresponding to the side surface of the light-emitting element assembly 10A.

[0078] That is, as shown in FIG. 8B, the third covering member 71, the first covering member 72 and the light-emitting element assembly 10A are transported with the first guide tube 301 inserted between the third covering member 71 and the light-emitting element assembly 10A.

[0079] Next, when the first covering member 72 is heated by the hot air nozzle 303 at the transfer position where the first guide tube 301 is removed, the first covering member 72 shrinks and the third covering member 71 is tightly adhered to the four side surfaces of the light-emitting element assembly 10A.

[0080] Next, as shown in FIG. 8C, the light-emitting element assembly 10A with the first covering member 72 adhered thereto is transported along the inner surface of the second guide tube 302 and heated by the heater 304 to thermally cure the adhesive layer (FIG. 8A).

[0081] Finally, the third covering member 71 and the first covering member 72 are cut by the cutter CT at the same height as the light-emitting element assembly 10 A. Through the above steps, the manufacturing of the semiconductor light-emitting device 70 is completed.

[0082] As described above in detail, the present invention provides a semiconductor light-emitting device that can block light emitted from the side surfaces of the semiconductor light-emitting element and the light guide, protect the semiconductor light-emitting element and the light guide from the outside world, and has excellent airtightness and high reliability.Furthermore, it is possible to provide a semiconductor light-emitting device that is easy to manufacture, low cost, and has a simple structure.

[0083] In the above-described embodiment, the semiconductor light emitting element and the light guide have been described as having a rectangular columnar shape, but the present invention is not limited to this and may be applied to cases where the semiconductor light emitting element and the light guide have a polygonal columnar shape or a cylindrical (including an elongated cylindrical) shape.

[0084] Furthermore, although the semiconductor light emitting device has been described as having a cylindrical shape, the present invention is not limited to this and may be applied to a polygonal pillar shape or a cylindrical shape (including an elongated pillar shape). [Explanation of symbols]

[0085] 10, 50, 70: semiconductor light emitting device, 10A: light emitting element assembly, 11: semiconductor light emitting element, 12: adhesive layer, 13: light guide (phosphor plate), 14: covering member, 14A: heat shrinkable resin, 14R: wraparound portion, 16A: inner covering member, 16B: outer covering member, 20: light emitting semiconductor layer, 21: second conductivity type semiconductor layer, 22: light emitting layer, 23: first conductivity type semiconductor layer, 71, 71A: third covering member (inner covering member), 72: first covering member (outer covering member), 71G, 72G: adhesive layer, 200, 300: covering molding machine

Claims

1. a light-emitting element assembly including a substrate having a first electrode and a second electrode on a bottom surface thereof, a transparent light guide located on the substrate, and a light-emitting semiconductor layer sandwiched between the substrate and the light guide, the light-emitting semiconductor layer having a light-emitting layer connected to the first electrode and the second electrode, and emitting light emitted from the light-emitting layer from a top surface thereof; a tubular heat-shrinkable covering member that covers all side surfaces of the light-emitting element assembly with a heat-shrinkable tubular resin, the substrate is a growth substrate on which the light-emitting semiconductor layer is grown or a support substrate that supports the light-emitting semiconductor layer, and is configured to be thicker than the light-emitting semiconductor layer; the light guide is surrounded by a bottom surface into which light emitted from the light emitting layer is incident, a light exit surface opposite to the bottom surface and from which the light incident from the bottom surface exits, and a side surface connecting the bottom surface and the light exit surface, and is configured to be thicker than the light emitting semiconductor layer; The semiconductor light emitting element having the light emitting semiconductor layer provided on the substrate is integrally bonded to the substrate and the light guide by an adhesive layer so as to sandwich the light emitting semiconductor layer, The heat-shrinkable covering member constitutes the outermost surface of the semiconductor light-emitting device.

2. a light-emitting element assembly including a substrate having a first electrode and a second electrode on a bottom surface thereof, a transparent light guide located on the substrate, and a light-emitting semiconductor layer sandwiched between the substrate and the light guide, the light-emitting semiconductor layer having a light-emitting layer connected to the first electrode and the second electrode, and emitting light emitted from the light-emitting layer from a top surface thereof; a tubular heat-shrinkable covering member that covers all side surfaces of the light-emitting element assembly with a heat-shrinkable tubular resin, the substrate is a growth substrate on which the light-emitting semiconductor layer is grown or a support substrate that supports the light-emitting semiconductor layer, and is configured to be thicker than the light-emitting semiconductor layer; the light guide is surrounded by a bottom surface into which light emitted from the light emitting layer is incident, a light exit surface opposite to the bottom surface and from which the light incident from the bottom surface exits, and a side surface connecting the bottom surface and the light exit surface, and is configured to be thicker than the light emitting semiconductor layer; The semiconductor light emitting element having the light emitting semiconductor layer provided on the substrate is integrally bonded to the substrate and the light guide by an adhesive layer so as to sandwich the light emitting semiconductor layer, The heat-shrinkable covering member further includes an outer covering member made of a heat-shrinkable resin, and the outer covering member is provided on the outside of the heat-shrinkable covering member. The outer covering member constitutes the outermost surface of the semiconductor light emitting device.

3. 3. The semiconductor light emitting device according to claim 1, wherein the light emitting element assembly and the heat shrinkable covering member are bonded together with a thermosetting adhesive.

4. The semiconductor light emitting device according to claim 1 , wherein the light emitting element assembly has a rectangular pillar shape.

5. 5. The semiconductor light emitting device according to claim 1, wherein the heat shrinkable resin is made of any one of fluororesin, silicone resin, epoxy resin, and acrylic resin.

6. The semiconductor light emitting device according to claim 1 , wherein the light guide is a phosphor.

7. 7. The semiconductor light emitting device according to claim 1, wherein the heat shrinkable covering member has a wraparound portion that wraps around a rear surface of the semiconductor light emitting element and covers a peripheral portion of the rear surface of the semiconductor light emitting element.

8. the heat-shrinkable covering member has a substantially cylindrical shape, The semiconductor light emitting device according to claim 1 , further comprising a resin molding inserted and filled between the heat-shrinkable covering member and the light emitting element assembly as an inner covering member.

9. 9. The semiconductor light emitting device according to claim 8, wherein the light emitting element assembly has a rectangular columnar shape, and the resin molding has an arc-shaped cross section.

10. 10. The semiconductor light emitting device according to claim 8, wherein the inner covering member has a plurality of projections and recesses on an outer surface thereof.

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