Methods for controlling the surface properties and thickness of multilayer transition metal dichalcogenide thin films

JP7788781B2Active Publication Date: 2025-12-19INDUSTRYACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY
View PDF 4 Cites 0 Cited by

Patent Information

Application Number
JP2025502632
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2022-08-24
Filing Date
2023-08-18
Publication Date
2025-12-19
Estimated Expiration
2043-08-18

Smart Images

  • Figure 0007788781000001
    Figure 0007788781000001
  • Figure 0007788781000002
    Figure 0007788781000002
  • Figure 0007788781000003
    Figure 0007788781000003
Patent Text Reader

Abstract

This invention relates to a method for controlling the surface properties and thickness of a multilayer transition metal dichalcogenide thin film. After forming an amorphous transition metal oxide thin film on the multilayer transition metal dichalcogenide thin film, the multilayer transition metal dichalcogenide thin film on which the amorphous transition metal oxide thin film has been formed is treated at least once with an ammonium sulfide aqueous solution, thereby enabling the surface properties and thickness of the transition metal dichalcogenide to be controlled simply and inexpensively without the need for complex equipment for heat treatment, plasma or laser etching, etc.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Manufacture of semiconductor device, manufacturing device of semiconductor device, manufacture of semiconductor laser, manufacture of quantum wire structure, and crystal growth method

    JP1994232099A

  • Sulfur containing thin film

    JP2017501303A

  • Manufacturing method of two-dimensional transition metal dichalcogenide thin film

    JP2018525516A

  • Transition metal dichalcogenide thin film transistor and method of manufacturing the same

    KR1020170098053A