Amorphous materials and cross-point memory
JP7789400B2Active Publication Date: 2025-12-22NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY
Patent Information
- Application Number
- JP2023556417
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2021-10-27
- Filing Date
- 2022-10-24
- Publication Date
- 2025-12-22
- Estimated Expiration
- 2042-10-24
Smart Images
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Abstract
The present invention provides an amorphous material which contains, as main components, Hf, O and Te and has such a characteristic that the electrical resistivity transits from a first state to a second state that is lower than the first state at a specific threshold voltage. A cross-point type memory can be obtained by sandwiching a pair of a memory part and a selector part containing this amorphous material between two electrode wiring lines.
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Citation Information
Patent Citations
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