Etching method, etching device, semiconductor device manufacturing method, and master plate manufacturing method
JP7789604B2Active Publication Date: 2025-12-22KIOXIA CORP
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Patent Information
- Application Number
- JP2022048499
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-03-24
- Publication Date
- 2025-12-22
- Estimated Expiration
- 2042-03-24
Abstract
To provide an etching method capable of forming suitable concavo-convex patterns on substrates, etching equipment, a method for manufacturing a semiconductor device, and a method for manufacturing an original plate.SOLUTION: One example of an etching method includes a first step of forming a surface modification layer containing halogens on a substrate by supplying a gas containing halogens to the substrate or by holding the substrate in a gas atmosphere containing halogens, and a second step of removing the surface modification layer at a predetermined site and the substrate under the surface modification layer at the predetermined site by supplying ions derived from solid raw materials to the predetermined site in the surface modification layer.SELECTED DRAWING: Figure 1
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