Etching method, etching device, semiconductor device manufacturing method, and master plate manufacturing method

JP7789604B2Active Publication Date: 2025-12-22KIOXIA CORP
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Patent Information

Application Number
JP2022048499
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-03-24
Publication Date
2025-12-22
Estimated Expiration
2042-03-24
Patent Text Reader

Abstract

To provide an etching method capable of forming suitable concavo-convex patterns on substrates, etching equipment, a method for manufacturing a semiconductor device, and a method for manufacturing an original plate.SOLUTION: One example of an etching method includes a first step of forming a surface modification layer containing halogens on a substrate by supplying a gas containing halogens to the substrate or by holding the substrate in a gas atmosphere containing halogens, and a second step of removing the surface modification layer at a predetermined site and the substrate under the surface modification layer at the predetermined site by supplying ions derived from solid raw materials to the predetermined site in the surface modification layer.SELECTED DRAWING: Figure 1
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