Optoelectronic structural elements, semiconductor structures and methods relating thereto

By employing controlled dopant application and diffusion processes with patterned masks, the method addresses efficiency degradation in quantum well intermixing, enhancing both low- and high-current performance and extending the lifespan of optoelectronic components.

JP7789881B2Active Publication Date: 2025-12-22AMS OSRAM INT GMBH
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Patent Information

Application Number
JP2024204199
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-01-29
Filing Date
2024-11-22
Publication Date
2025-12-22
Estimated Expiration
2040-03-26

AI Technical Summary

Technical Problem

Optoelectronic components with quantum well intermixing experience significant degradation and efficiency loss at low current intensities due to impurity diffusion, particularly in high load current densities, limiting their performance and lifespan.

Method used

A method involving controlled dopant application and diffusion processes, including a patterned mask to protect active layers, followed by precise temperature and precursor use, forms barriers to impurity penetration and quantum well intermixing, optimizing the process window for improved aging resistance and efficiency.

Benefits of technology

The method enhances low- and high-current efficiency by reducing non-radiative recombination and extending the lifespan of optoelectronic components through controlled quantum well intermixing and barrier formation, maintaining performance over time.

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Abstract

To provide an optoelectronic component which enhances quantum well intermixing.SOLUTION: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer arranged between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a multiplicity of first optically active regions, at least one second region, and at least one third region. In this case, the plurality of first optically active regions are arranged at a distance from one another in a hexagonal pattern. The at least one quantum well in the active region has a greater band gap in the at least one second region than in the multiplicity of first optically active regions and the at least one third region. The band gap is modified by quantum well intermixing, in particular. The at least one second region encloses the multiplicity of first optically active regions.SELECTED DRAWING: Figure 6A
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Citation Information

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