Device integrating OLED and phototransistor, and method for manufacturing device integrating OLED and phototransistor
JP7797063B1Active Publication Date: 2026-01-13JIANGSU UNIV OF SCI & TECH
Patent Information
- Application Number
- JP2025072512
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2024-08-07
- Filing Date
- 2025-04-24
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2045-04-24
Smart Images

Figure 0007797063000001_ABST
Abstract
The present invention discloses an apparatus and an e-beam etching method for integrating an OLED and a phototransistor, in which a series-connected OLED and a phototransistor are fabricated on a substrate using an e-beam etching process and connected with an insulating e-beam photoresist. The phototransistor includes a gate, a gate insulating layer, a source, a conductive channel, and a drain, and the OLED includes a semitransparent anode, a hole transport layer, a light-emitting layer and electron transport layer, a reflective cathode, and a substrate. The present invention realizes the multi-functional integration of organic electronic devices, simultaneously having the functions of light-emitting display and light-sensing, and realizes the control of the luminous intensity of the OLED according to the intensity of external light.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Ultrahigh-sensitivity near-infrared transistor photoelectric detector and preparation method thereof
CN112928213A
Flat panel display and electronic device
JP2004126153A
Organic el device and display
JP2005259550A
Inverted top emission device, and method for manufacturing the same
JP2016035888A
Organic optoelectronic device with infrared detector
JP2016514341A