Light-emitting element

Abstract

To provide a light emitting element.SOLUTION: A light emitting element includes a light emitting array, a plurality of cladding layers, and an insulating photosensitive material layer. The light emitting array includes a first organic light emitting unit and a second organic light emitting unit. The first organic light emitting unit includes a first electrode, and the second organic light emitting unit includes a second electrode. The cladding layers include a first cladding layer and a second cladding layer, where the first cladding layer covers a portion of an upper surface of the first electrode and a sidewall of the first electrode, and the second cladding layer covers a portion of an upper surface of the second electrode and a sidewall of the second electrode. The insulating photosensitive material layer is located between the sidewall of the first electrode and the sidewall of the second electrode, and partially covers the upper surface of the first electrode.SELECTED DRAWING: Figure 2B

Description

[Technical Field]

[0001] The present disclosure relates to light emitting devices, and more particularly to organic light emitting devices. [Background technology]

[0002] Organic light-emitting displays are widely used in most high-end electronic devices. However, due to limitations in conventional technology, the luminous efficiency and quality of the luminescent materials cannot be effectively controlled, resulting in unpredictable optical performance of the devices. Summary of the Invention [Means for solving the problem]

[0003] In the present disclosure, a light-emitting device includes a light-emitting array, multiple cladding layers, and a photosensitive insulating material layer. The light-emitting array includes a first organic light-emitting unit and a second organic light-emitting unit, the first organic light-emitting unit including a first electrode, and the second organic light-emitting unit including a second electrode. The multiple cladding layers include a first cladding layer and a second cladding layer, the first cladding layer covering a portion of the top surface of the first electrode and a sidewall of the first electrode, and the second cladding layer covering a portion of the top surface of the second electrode and a sidewall of the second electrode. The photosensitive insulating material layer is located between the sidewall of the first electrode and the sidewall of the second electrode and partially covers the top surface of the first electrode.

[0004] In the present disclosure, a light-emitting device includes a plurality of organic light-emitting units, a photosensitive insulating material layer, and a plurality of cladding layers. The photosensitive insulating material layer covers the organic light-emitting units and has a plurality of recesses for exposing a plurality of effective light-emitting areas of the organic light-emitting units. Each cladding layer surrounds the sidewalls of each organic light-emitting unit and is interposed between two adjacent sidewalls of the organic light-emitting units.

[0005] In the present disclosure, a method for manufacturing a light-emitting element includes the steps of preparing a substrate, forming a plurality of electrodes on the substrate, forming a coating material layer on the electrodes, patterning the coating material layer to surround a plurality of side walls of the electrodes, exposing a plurality of upper surfaces of the electrodes, and forming a plurality of cladding layers (the cladding layers are discontinuous between the electrodes), providing a photosensitive insulating material on the electrodes and the cladding layer, patterning the photosensitive insulating material to form a photosensitive insulating material layer that exposes a plurality of effective light-emitting areas on the upper surfaces of the electrodes, and providing an organic light-emitting material on the effective light-emitting areas of the electrodes.

[0006] In some embodiments, the optical absorptivity of the cladding layer is greater than the optical absorptivity of the photosensitive insulating material layer.

[0007] In some embodiments, the cladding layer and the photosensitive insulating material layer are integrally molded and made of the same material.

[0008] In some embodiments, the cladding layers comprise electrical conductors, and multiple cladding layers are separated from one another.

[0009] In some embodiments, the cladding layer comprises a metal, a resin, graphite, or any combination thereof.

[0010] In some embodiments, the cladding layer comprises a photosensitive material.

[0011] In some embodiments, the light-emitting device further comprises a transparent substrate, and the organic light-emitting unit is disposed on the transparent substrate.

[0012] In some embodiments, the first electrode has a first edge and a second edge opposite or adjacent to the first edge, a portion of the top surface extending inward from the first edge a first distance, and a portion of the top surface extending inward from the second edge a second distance, the first distance being greater than the second distance.

[0013] In some embodiments, the first electrode has a first edge and a second edge opposite or adjacent to the first edge, the photosensitive insulating material layer contacts a first region near the first edge and a second region near the second edge on the top surface of the first electrode, and the width of the first region is not equal to the width of the second region and / or the area of ​​the first region is not equal to the area of ​​the second region.

[0014] In some embodiments, the first electrode and the second electrode are anodes, and / or the first electrode and the second electrode comprise a transparent conductive material.

[0015] In some embodiments, the first organic light-emitting unit and the second organic light-emitting unit emit light at the same wavelength.

[0016] In some embodiments, the organic light-emitting material comprises an electron-transporting layer (ETL), an electron-injecting layer (EIL), an emissive layer (EM), a hole-blocking layer (HBL), a hole-injecting layer (HIL), a hole-transporting layer (HTL), or any combination thereof.

[0017] In some embodiments, the coating material layer is formed by spin coating or deposition.

[0018] In some embodiments, the layer of coating material is patterned by a photolithographic process. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 10 is a top view showing an intermediate product of a light-emitting element. [Figure 2A] 1 is a top view of a light-emitting device according to some embodiments. [Figure 2B] FIG. 2B is a cross-sectional view taken along line 2B-2B′ in FIG. 2A. [Figure 3A] 1 is a top view of a light-emitting device according to some embodiments. [Figure 3B] FIG. 3B is a cross-sectional view taken along line 3B-3B′ in FIG. 3A. [Figure 4A] 1 is a top view of a light-emitting device according to some embodiments. [Figure 4B] FIG. 4B is a cross-sectional view taken along line 4B-4B′ in FIG. 4A. [Figure 4C] 1 is a top view of a light-emitting device according to some embodiments. [Figure 4D] FIG. 4D is a cross-sectional view taken along line 4D-4D′ in FIG. 4C. [Figure 5A] 1 is a top view of a light-emitting device according to some embodiments. [Figure 5B] 1 is a cross-sectional view of a light-emitting device according to some embodiments. [Figure 6A] 1 is a top view of a light-emitting device according to some embodiments. [Figure 6B] FIG. 6B is a cross-sectional view taken along line 6B-6B′ in FIG. 3A. [Figure 7A] 1 is a top view of a light-emitting device according to some embodiments. [Figure 7B] FIG. 7B is a cross-sectional view taken along line 7B-7B' in FIG. 7A. [Figure 8A] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 8B] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 9A] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 9B] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 10A] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 10B] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 11A] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 11B] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 12A] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 12B]1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 13A] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. [Figure 13B] 1A-1D are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0020] 1 is a top view illustrating an intermediate product of a light-emitting element 10. The light-emitting element 10 includes a light-emitting layer 20 and a cover layer 40 disposed over the light-emitting layer 20. Spacers 30 can be designed to provide an array of recesses for accommodating an array of light-emitting pixels in the light-emitting layer 20. In some embodiments, the spacers 30 can include a photosensitive material.

[0021] FIG. 2A is a top view of a light-emitting device according to some embodiments, and FIG. 2B is a cross-sectional view taken along line 2B-2B′ in FIG. 2A. In some embodiments, FIG. 2B is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. In some embodiments, FIG. 2B is a cross-sectional view taken along line 2B-2B′ in FIG. 2A, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here. The spacer 30 has a plurality of bumps 310 to define a light-emitting pixel pattern. Recesses are located between two adjacent bumps 310, providing space for accommodating the light-emitting pixels. Those skilled in the art should understand that although the bumps 310 are shown separated when viewed from the cross-sectional view of FIG. 2B, they may be connected to each other via other portions of the spacer 30 when viewed from the top views of FIGS. 1 and 2A.

[0022] 1, 2A, and 2B, light-emitting element 10 includes a substrate 100, bumps 310 on substrate 100, and a light-emitting array. In some embodiments, the light-emitting array includes a plurality of organic light-emitting units (also referred to as light-emitting pixels), such as at least organic light-emitting unit 101 (also referred to as a first organic light-emitting unit) and organic light-emitting unit 102 (also referred to as a second organic light-emitting unit). In some embodiments, organic light-emitting unit 101 and organic light-emitting unit 102 are located on substrate 100 between bumps 310. In some embodiments, organic light-emitting unit 101 and organic light-emitting unit 102 emit light of the same wavelength.

[0023] In some embodiments, substrate 100 may include a thin film transistor (TFT) array configured to correspond to light-emitting pixels in light-emitting layer 20. Substrate 100 may include a plurality of capacitors. In some embodiments, two or more transistors are configured to form a circuit with the capacitors and the light-emitting pixels.

[0024] In some embodiments, organic light-emitting unit 101 comprises electrode 215 (also referred to as a first electrode), organic layer 269 (also referred to as an emissive layer), and electrode 216 (also referred to as a second electrode) on organic layer 269. Organic light-emitting unit 102 comprises electrode 225 (also referred to as a first electrode), organic layer 269, and electrode 216 (also referred to as a second electrode) on organic layer 269. In some embodiments, electrode 216 is located on organic layer 269.

[0025] In some embodiments, electrode 215 of organic light emitting unit 101 and electrode 225 of organic light emitting unit 102 are anodes. In some embodiments, electrode 215 of organic light emitting unit 101 and electrode 225 of organic light emitting unit 102 comprise a transparent conductive material. In some embodiments, electrode 215 and electrode 225 are configured to connect to circuitry embedded in substrate 100 on one side and to contact organic layer 269 on the other side.

[0026] In some embodiments, the second electrode 216 is patterned to cover only the active light-emitting area of ​​each organic light-emitting unit. In some embodiments, the second electrode 216 contacts the organic layer 269. The second electrode 216 may be a continuous film as shown in FIG. 2B , and is located on the organic layer 269 and the bumps 310. In other words, the second electrode 216 is a common electrode for multiple organic light-emitting units. In some embodiments, the second electrode 216 is a common electrode for all of the organic light-emitting units in the light-emitting element.

[0027] In some embodiments, organic layer 269 includes one or more layers of organic light-emitting materials, including an electron-transporting layer (ETL), an electron-injecting layer (EIL), an emissive layer (EM), a hole-blocking layer (HBL), a hole-injecting layer (HIL), a hole-transporting layer (HTL), or any combination thereof.

[0028] In some embodiments, organic layer 269 includes a first carrier transport layer 262 over bump 310 and electrode 215, a second carrier transport layer 263 over first carrier transport layer 262, and an organic light-emitting layer 264 over second carrier transport layer 263. In some embodiments, organic layer 269 further includes a carrier injection layer 261 disposed between electrode 215 and first carrier transport layer 262. In some embodiments, organic layer 269 further includes an organic carrier transport layer 265 disposed over organic light-emitting layer 264. In some embodiments, carrier injection layer 261 may be a hole injection layer, first carrier transport layer 262 may be a first hole transport layer, second carrier transport layer 263 may be a second hole transport layer, and organic carrier transport layer 265 may be an electron transport layer.

[0029] In some embodiments, bump 310 includes a portion of cladding layer 200A and a portion of photosensitive insulating material layer 300. In some embodiments, bump 310 includes a portion of cladding layer 200B and a portion of photosensitive insulating material layer 300. In some embodiments, bump 310 includes a portion of cladding layer 200A, a portion of cladding layer 200B, and a portion of photosensitive insulating material layer 300. In some embodiments, bump 310 is also referred to as a pixel defined layer (PDL).

[0030] In some embodiments, cladding layer 200A surrounds the sidewalls of organic light-emitting unit 101. In some embodiments, cladding layer 200A covers part 215P of top surface 215a of electrode 215 and sidewalls 215S of electrode 215. In some embodiments, cladding layer 200A includes through-holes 200A1 for exposing part of top surface 215a of electrode 215. In some embodiments, cladding layer 200A is interposed between the sidewalls of adjacent organic light-emitting units 101 and 102.

[0031] In some embodiments, cladding layer 200B surrounds the sidewalls of organic light-emitting unit 102. In some embodiments, cladding layer 200B covers portion 225P of top surface 225a of electrode 225 and sidewall 225S of electrode 225. In some embodiments, cladding layer 200B includes through-hole 200B1 for exposing portion of top surface 225a of electrode 225. In some embodiments, cladding layer 200B is interposed between the sidewalls of adjacent organic light-emitting units 101 and 102.

[0032] In some embodiments, cladding layers 200A, 200B include a conductive material and are separated from one another. In some embodiments, cladding layers 200A, 200B include a metal, a resin, graphite, or any combination thereof. In some embodiments, cladding layers 200A, 200B include a photosensitive material. In some embodiments, cladding layers 200A, 200B include quantum dots with excellent light absorption properties. In some embodiments, cladding layers 200A, 200B include a carbon black material, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like. In some embodiments, cladding layers 200A, 200B include a blackbody material with an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or greater for visible light.

[0033] In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 50% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 60% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 70%. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 80% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 90% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 95% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 99% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a particular wavelength is 99.5% or greater. In some embodiments, the absorptivity of cladding layers 200A, 200B for a specific wavelength is 99.9% or greater. In some embodiments, the specific wavelength is less than 400 nm. In some embodiments, the specific wavelength is less than 350 nm. In some embodiments, the specific wavelength is less than 300 nm. In some embodiments, the specific wavelength is less than 250 nm. In some embodiments, the specific wavelength is less than 200 nm. In some embodiments, the specific wavelength is less than 150 nm. In some embodiments, the specific wavelength is less than 100 nm.

[0034] In some embodiments, the electrode 215 has an edge 2151 and an edge 2152 opposite the edge 2151, a portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2151 by a distance D1, and the portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2152 by a distance D2, where the distance D1 is greater than the distance D2. In some embodiments, the electrode 215 has an edge 2153 adjacent to the edge 2151, and the portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2153 by a distance D3, where the distance D1 is greater than the distance D3. In some embodiments, electrode 215 has edge 2151 and adjacent edge 2154, and portion 215P of top surface 215a of electrode 215 extends inward from edge 2154 to a distance D4, where distance D1 is greater than distance D4. In some embodiments, distances D1, D2, D3, and D4 may all be different. In some embodiments, at least two of distances D1, D2, D3, and D4 are the same.

[0035] In some embodiments, electrode 225 has edge 2251 and edge 2252 opposite edge 2251, portion 225P of upper surface 225a of electrode 225 extends inward from edge 2251 to a distance D5, and portion 225P of upper surface 225a of electrode 225 extends inward from edge 2252 to a distance D6, where distance D5 is greater than distance D6. In some embodiments, electrode 225 has edge 2253 adjacent to edge 2251, and portion 225P of upper surface 225a of electrode 225 extends inward from edge 2253 to a distance D7, where distance D5 is greater than distance D7. In some embodiments, electrode 225 has edge 2254 adjacent to edge 2251, and portion 225P of top surface 225a of electrode 225 extends inward from edge 2254 to a distance D8, where distance D5 is greater than distance D8. In some embodiments, distances D5, D6, D7, and D8 may all be different. In some embodiments, at least two of distances D5, D6, D7, and D8 are the same.

[0036] In some embodiments, photosensitive insulating material layer 300 is located between sidewall 215S of electrode 215 and sidewall 225S of electrode 225. In some embodiments, photosensitive insulating material layer 300 partially covers top surface 215a of electrode 215. In some embodiments, photosensitive insulating material layer 300 partially covers top surface 225a of electrode 225. In some embodiments, photosensitive insulating material layer 300 covers organic light emitting unit 101 and organic light emitting unit 102, and has a plurality of recesses 300C for exposing a plurality of effective light emitting areas of the plurality of organic light emitting units, for example, the effective light emitting area of ​​organic light emitting unit 101 and the effective light emitting area of ​​organic light emitting unit 102.

[0037] In some embodiments, cladding layers 200A, 200B are located below photosensitive insulating material layer 300. In some embodiments, cladding layers 200A, 200B are embedded in photosensitive insulating material layer 300. In some embodiments, cladding layer 200A is located between a peripheral region (portion 215P and sidewall 215S) of top surface 215a of electrode 215 and photosensitive insulating material layer 300. In some embodiments, cladding layer 200B is located between a peripheral region (portion 225P and sidewall 225S) of top surface 225a of electrode 225 and photosensitive insulating material layer 300.

[0038] In some embodiments, the center of electrode 215 is not aligned with the center of recess 300C above electrode 215. In some embodiments, the center of electrode 215 is not aligned with the center of through hole 200A1 in cladding layer 200A. In some embodiments, the center of electrode 225 is not aligned with the center of recess 300C above electrode 225. In some embodiments, the center of electrode 225 is not aligned with the center of through hole 200B1 in cladding layer 200B.

[0039] In some embodiments, the absorptivity of the photosensitive insulating material layer 300 for a specific wavelength is 50% or greater. In some embodiments, the absorptivity of the photosensitive insulating material layer 300 for a specific wavelength is 60% or greater. In some embodiments, the absorptivity of the photosensitive insulating material layer 300 for a specific wavelength is 70% or greater. In some embodiments, the absorptivity of the photosensitive insulating material layer 300 for a specific wavelength is 80% or greater. In some embodiments, the absorptivity of the photosensitive insulating material layer 300 for a specific wavelength is 90% or greater. In some embodiments, the absorptivity of the photosensitive insulating material layer 300 for a specific wavelength is 95% or greater. In some embodiments, the specific wavelength is less than 400 nm (wavelength less than 400 nm). In some embodiments, the specific wavelength is less than 350 nm. In some embodiments, the specific wavelength is less than 300 nm. In some embodiments, the specific wavelength is less than 250 nm. In some embodiments, the specific wavelength is less than 200 nm. In some embodiments, the specific wavelength is less than 150 nm. In some embodiments, the specific wavelength is less than 100 nm. In some embodiments, the absorptivity of the cladding layers 200A, 200B for light having the specific wavelength is greater than the absorptivity of the photosensitive insulating material layer 300 for light having the specific wavelength.

[0040] In some embodiments, the photosensitive insulating material layer 300 contacts a region R11 near the edge 2151 of the upper surface 215a of the electrode 215, and the photosensitive insulating material layer 300 contacts a region R12 near the edge 2152 of the upper surface 215a of the electrode 215, where the width W1 of the region R11 is not equal to the width W2 of the region R12. In some embodiments, the area of ​​the region R11 is not equal to the area of ​​the region R12. In some embodiments, the photosensitive insulating material layer 300 contacts a region R13 near the edge 2153 of the upper surface 215a of the electrode 215, where the width W1 of the region R11 is not equal to the width W3 of the region R13. In some embodiments, the area of ​​the region R11 is not equal to the area of ​​the region R13. In some embodiments, the photosensitive insulating material layer 300 contacts a region R14 near the edge 2154 of the top surface 215a of the electrode 215, and the width W1 of the region R11 is not equal to the width W4 of the region R14. In some embodiments, the area of ​​the region R11 is not equal to the area of ​​the region R14. In some embodiments, the regions R11, R12, R13, and R14 of the top surface 215a of the electrode 215 surround the effective light-emitting area of ​​the top surface 215a of the electrode 215. In some embodiments, a portion 215P of the top surface 215a of the electrode 215 surrounds the regions R11, R12, R13, and R14. In some embodiments, a portion of the photosensitive insulating material layer 300 surrounds the effective light-emitting area of ​​the top surface 215a of the electrode 215. In some embodiments, a portion of the photosensitive insulating material layer 300 contacts an annular region between the effective light-emitting area of ​​the upper surface 215a of the electrode 215 and the portion 215P (ie, regions R11, R12, R13, and R14).

[0041] In some embodiments, the photosensitive insulating material layer 300 contacts a region R21 near the edge 2251 of the upper surface 225a of the electrode 225, and the photosensitive insulating material layer 300 contacts a region R22 near the edge 2252 of the upper surface 225a of the electrode 225, where the width W5 of the region R21 is not equal to the width W6 of the region R22. In some embodiments, the area of ​​the region R21 is not equal to the area of ​​the region R22. In some embodiments, the photosensitive insulating material layer 300 contacts a region R23 near the edge 2253 of the upper surface 225a of the electrode 225, where the width W5 of the region R21 is not equal to the width W7 of the region R23. In some embodiments, the area of ​​the region R21 is not equal to the area of ​​the region R23. In some embodiments, the photosensitive insulating material layer 300 contacts a region R24 near the edge 2254 of the top surface 225a of the electrode 225, and the width W5 of the region R21 is not equal to the width W8 of the region R24. In some embodiments, the area of ​​the region R21 is not equal to the area of ​​the region R24. In some embodiments, the regions R21, R22, R23, and R24 of the top surface 225a of the electrode 225 surround the effective light-emitting area of ​​the top surface 225a of the electrode 225. In some embodiments, the portion 225P of the top surface 225a of the electrode 225 surrounds the regions R21, R22, R23, and R24. In some embodiments, a portion of the photosensitive insulating material layer 300 surrounds the effective light-emitting area of ​​the top surface 225a of the electrode 225. In some embodiments, a portion of the photosensitive insulating material layer 300 contacts an annular region between the effective light-emitting area of ​​the upper surface 225a of the electrode 225 and the portion 225P (ie, regions R21, R22, R23, and R24).

[0042] According to some embodiments of the present disclosure, in a light-emitting device, multiple cladding layers cover the sidewalls of multiple organic light-emitting units (e.g., the sidewalls of multiple electrodes) and are arranged together with a photosensitive insulating material layer, which can effectively reduce optical crosstalk between the organic light-emitting units, reduce halation problems in the emission pattern, and improve the contrast of the emission pattern.

[0043] Next, according to some embodiments of the present disclosure, each cladding layer covers the periphery of the sidewalls and top surface of the electrode (or anode) of each organic light-emitting unit, and a photosensitive insulating material layer is disposed between the sidewalls of the electrodes of adjacent organic light-emitting units, so that light reflected upward or obliquely by the electrodes is effectively absorbed by the cladding layer, thereby better reducing optical crosstalk of the reflected light of adjacent electrodes and effectively improving the contrast of the light-emitting pattern. In addition to helping to absorb light reflected upward or obliquely by the electrodes, if the material of the cladding layer contains a conductor, the photosensitive insulating material layer can provide electrical isolation between different organic light-emitting units and prevent short circuits caused by the conductive cladding layer contacting the electrodes of adjacent organic light-emitting units.

[0044] Furthermore, according to some embodiments of the present disclosure, each cladding layer is embedded in the photosensitive insulating material layer and is located below the photosensitive insulating material layer and / or between the peripheral area of ​​each electrode and the photosensitive insulating material layer, which can enhance the absorption effect of light reflected upward or obliquely by the electrodes, thereby more effectively reducing optical crosstalk between the organic light-emitting units, reducing halation problems in the emission pattern, and improving the contrast of the emission pattern.

[0045] Furthermore, according to some embodiments of the present disclosure, the organic light-emitting units can emit light of the same wavelength, for example, adjacent organic light-emitting units can emit light of the same wavelength, and the sidewalls of each organic light-emitting unit are covered with a corresponding cladding layer, thereby achieving a fine pattern design and a high-contrast light-emitting pattern through the design of the number of organic light-emitting units, their positional relationship, and the outline of each effective light-emitting area.

[0046] 3A is a top view of a light-emitting device according to some embodiments, and FIG. 3B is a cross-sectional view taken along line 3B-3B' in FIG. 3A. In some embodiments, FIG. 3B is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. In some embodiments, FIG. 3B is a cross-sectional view taken along line 3B-3B' in FIG. 3A, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here.

[0047] 3A and 3B, a portion of cladding layer 200A directly contacts a portion of organic layer 269. In some embodiments, upper surface 215a of electrode 215 does not have regions R11 and R14. In some embodiments, a portion of photosensitive insulating material layer 300 contacts upper surface 215a of electrode 215 and is located between the effective light-emitting area and portion 215P. In some embodiments, a portion of photosensitive insulating material layer 300 contacts the L-shaped region (i.e., regions R11 and R14) between the effective light-emitting area of ​​upper surface 215a of electrode 215 and portion 215P.

[0048] 4A is a top view of a light-emitting device according to some embodiments, and FIG. 4B is a cross-sectional view taken along line 4B-4B' in FIG. 4A. In some embodiments, FIG. 4B is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. In some embodiments, FIG. 4B is a cross-sectional view taken along line 4B-4B' in FIG. 4A, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here.

[0049] In some embodiments, the cladding layer and the photosensitive insulating material layer are integrally molded and made of the same material. In some embodiments, as shown in Figures 4A and 4B, the cladding layer (e.g., cladding layer 200A) and the photosensitive insulating material layer (e.g., photosensitive insulating material layer 300) are integrally molded and made of the same material to form bump 310A, and the cladding layer (e.g., cladding layer 200B) and the photosensitive insulating material layer (e.g., photosensitive insulating material layer 300) are integrally molded and made of the same material to form bump 310B.

[0050] In some embodiments, the bump 310A surrounds the sidewall of the organic light emitting unit 101. In some embodiments, the bump 310A covers a portion 215P of the top surface 215a of the electrode 215 and the sidewall 215S of the electrode 215. In some embodiments, the bump 310A includes a through-hole 310A1 (also called a recess) for exposing a portion of the top surface 215a of the electrode 215. In some embodiments, the bump 310A is interposed between the sidewall of the organic light emitting unit 101 and the sidewall of the organic light emitting unit 102 adjacent to each other.

[0051] In some embodiments, the bump 310B surrounds the sidewall of the organic light emitting unit 102. In some embodiments, the bump 310B covers a portion 225P of the top surface 225a of the electrode 225 and a sidewall 225S of the electrode 225. In some embodiments, the bump 310B includes a through-hole 310B1 (also called a recess) for exposing a portion of the top surface 225a of the electrode 225. In some embodiments, the bump 310B is interposed between the sidewall of the organic light emitting unit 101 and the sidewall of the organic light emitting unit 102 adjacent to each other.

[0052] In some embodiments, the bumps 310A, 310B include a conductive material, and the bumps 310A and 310B are separated from each other.

[0053] In some embodiments, the absorptivity of the bumps 310A, 310B for a particular wavelength is 80% or greater. In some embodiments, the absorptivity of the bumps 310A, 310B for a particular wavelength is 90% or greater. In some embodiments, the absorptivity of the bumps 310A, 310B for a particular wavelength is 95% or greater. In some embodiments, the absorptivity of the bumps 310A, 310B for a particular wavelength is 99% or greater. In some embodiments, the absorptivity of the bumps 310A, 310B for a particular wavelength is 99.5% or greater. In some embodiments, the absorptivity of the bumps 310A, 310B for a particular wavelength is 99.9% or greater. In some embodiments, the particular wavelength is less than 400 nm. In some embodiments, the particular wavelength is less than 350 nm. In some embodiments, the particular wavelength is less than 300 nm. In some embodiments, the particular wavelength is less than 250 nm. In some embodiments, the particular wavelength is less than 200 nm. In some embodiments, the specific wavelength is less than 150 nm, hi some embodiments, the specific wavelength is less than 100 nm.

[0054] In some embodiments, the center of electrode 215 is not aligned with the center of through hole 310A1 of bump 310A. In some embodiments, the center of electrode 225 is not aligned with the center of through hole 310B1 of bump 310B.

[0055] 4C is a top view of a light-emitting device according to some embodiments, and FIG. 4D is a cross-sectional view taken along line 4D-4D' in FIG. 4C. In some embodiments, FIG. 4D is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. In some embodiments, FIG. 4D is a cross-sectional view taken along line 4D-4D' in FIG. 4C, showing only the light-emitting region. For simplicity, cover layer 40 is omitted here.

[0056] In some embodiments, the cladding layer (e.g., cladding layers 200A and 200B) and the photosensitive insulating material layer (e.g., photosensitive insulating material layer 300) are integrally molded and made of the same non-conductive material to form isolation structure 320, which covers the non-light-emitting region of the light-emitting element. In some embodiments, multiple bumps (e.g., bumps 310A and 310B) are connected to each other and made of the same non-conductive material to form isolation structure 320. In some embodiments, isolation structure 320 covers the non-light-emitting region on substrate 100. In some embodiments, isolation structure 320 completely covers the non-light-emitting region of the light-emitting element, leaving only the active light-emitting region of the organic light-emitting unit exposed.

[0057] 5A is a cross-sectional view of a light-emitting device according to some embodiments. In some embodiments, FIG. 5A is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here.

[0058] In some embodiments, the photosensitive insulating material layer 300 has a curved surface 212 that protrudes from the substrate 100 , and a portion of the organic layer 269 is located on the curved surface 212 .

[0059] In some embodiments, cladding layer 200A has a flat top surface and sloped sidewalls, hi some embodiments, cladding layer 200B has a flat top surface and sloped sidewalls.

[0060] In some embodiments, the electrode 215 has an edge 2151 and an edge 2152 opposite the edge 2151, and a portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2151 to a distance D1, and a portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2152 to a distance D2, and the distance D1 is greater than the distance D2.

[0061] In some embodiments, the photosensitive insulating material layer 300 contacts a region R11 near the edge 2151 of the upper surface 215a of the electrode 215, and the photosensitive insulating material layer 300 contacts a region R12 near the edge 2152 of the upper surface 215a of the electrode 215, and the width W1 of the region R11 is smaller than the width W2 of the region R12.

[0062] 5B is a cross-sectional view of a light-emitting device according to some embodiments. In some embodiments, FIG. 5B is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here.

[0063] In some embodiments, the photosensitive insulating material layer 300 has a curved surface 212 that protrudes from the substrate 100 , and a portion of the organic layer 269 is located on the curved surface 212 .

[0064] In some embodiments, the electrode 215 has an edge 2151 and an edge 2152 opposite the edge 2151, and a portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2151 to a distance D1, and a portion 215P of the upper surface 215a of the electrode 215 extends inward from the edge 2152 to a distance D2, and the distance D1 is greater than the distance D2.

[0065] In some embodiments, the photosensitive insulating material layer 300 contacts a region R11 near the edge 2151 of the upper surface 215a of the electrode 215, and the photosensitive insulating material layer 300 contacts a region R12 near the edge 2152 of the upper surface 215a of the electrode 215, and the width W1 of the region R11 is smaller than the width W2 of the region R12.

[0066] 6A is a top view of a light-emitting device according to some embodiments, and FIG. 6B is a cross-sectional view taken along line 6B-6B' in FIG. 6A. In some embodiments, FIG. 6B is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. In some embodiments, FIG. 6B is a cross-sectional view taken along line 6B-6B' in FIG. 6A, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here.

[0067] In some embodiments, the light-emitting device further includes a transparent substrate 100, and the organic light-emitting unit 101 and the organic light-emitting unit 102 are disposed on the transparent substrate 100. In some embodiments, the light-emitting device shown in Figures 6A and 6B is a bottom-emitting light-emitting device. In some embodiments, the transparent substrate 100 may include a glass plate. In some embodiments, the electrode 215 is a transparent electrode, and the electrode 216 is a reflective electrode.

[0068] In some embodiments, electrode 215 has a cross-shaped outline when viewed from above. In some embodiments, through-hole 200A1 in cladding layer 200A has a cross-shaped outline when viewed from above. In some embodiments, recess 300C in photosensitive insulating material layer 300 has a cross-shaped outline when viewed from above.

[0069] In some embodiments, the center of electrode 215 is not aligned with the center of recess 300C above electrode 215. In some embodiments, the center of electrode 215 is not aligned with the center of through hole 200A1 in cladding layer 200A.

[0070] 7A is a top view of a light-emitting device according to some embodiments, and FIG. 7B is a cross-sectional view taken along line 7B-7B' in FIG. 7A. In some embodiments, FIG. 7B is a cross-sectional view taken along line AA in FIG. 1, showing only the light-emitting region. In some embodiments, FIG. 7B is a cross-sectional view taken along line 7B-7B' in FIG. 7A, showing only the light-emitting region. For simplicity, the cover layer 40 is omitted here.

[0071] 7A and 7B, the light-emitting array comprises a plurality of organic light-emitting units, for example, at least organic light-emitting units 101, 102, 103, 104, and 105. In some embodiments, organic light-emitting units 101, 102, 103, 104, and 105 are above (or below) substrate 100, between bumps 310.

[0072] In some embodiments, organic light emitting unit 101 includes electrode 215, organic light emitting unit 102 includes electrode 225, organic light emitting unit 103 includes electrode 235, organic light emitting unit 104 includes electrode 245, and organic light emitting unit 105 includes electrode 255. In some embodiments, electrode 215, electrode 225, electrode 235, electrode 245, and electrode 255 are anodes. In some embodiments, second electrode 216 is a common electrode (or a common cathode) for all of the organic light emitting units in the light emitting element.

[0073] In some embodiments, cladding layer 200A surrounds the sidewalls of organic light emitting unit 101. In some embodiments, cladding layer 200B surrounds the sidewalls of organic light emitting unit 102. In some embodiments, cladding layer 200C surrounds the sidewalls of organic light emitting unit 103. In some embodiments, cladding layer 200D surrounds the sidewalls of organic light emitting unit 104. In some embodiments, cladding layer 200E surrounds the sidewalls of organic light emitting unit 105.

[0074] In some embodiments, at least two of electrodes 215, 225, 235, 245, and 255 have different contours. In some embodiments, electrodes 215, 225, 235, 245, and 255 can form a particular light emission pattern.

[0075] In some embodiments, at least two of the organic light-emitting units 101, 102, 103, 104, and 105 emit light of the same wavelength. In some embodiments, the organic light-emitting units 101, 102, 103, 104, and 105 emit light of the same wavelength. In some embodiments, the organic light-emitting units 101, 102, 103, 104, and 105 are configured to be in the same group, emitting light of the same color.

[0076] 8A to 13B are schematic diagrams illustrating methods for manufacturing light-emitting devices according to some embodiments.

[0077] As shown in FIGS. 8A and 8B, FIG. 8A is a top view, and FIG. 8B is a cross-sectional view taken along line 8B-8B' in FIG. 8A.

[0078] In some embodiments, a plurality of electrodes 215, 225, 235, 245, and 255 are formed on the substrate 100. In some embodiments, the electrodes 215, 225, 235, 245, and 255 form an electrode array pattern. In some embodiments, the electrode array pattern can be designed taking into account the arrangement of the light emission pattern.

[0079] As shown in FIGS. 9A and 9B, FIG. 9A is a top view, and FIG. 9B is a cross-sectional view taken along line 9B-9B' in FIG. 9A.

[0080] In some embodiments, the covering material layer 200 is formed on the electrodes 215, 225, 235, 245, and 255. In some embodiments, the covering material layer 200 is coated on the electrodes 215, 225, 235, 245, and 255 and the substrate 100. In some embodiments, the covering material layer 200 can be formed by spin coating or deposition.

[0081] In some embodiments, the coating material layer 200 comprises a conductor. In some embodiments, the coating material layer 200 comprises a metal, a resin, graphite, or any combination thereof. In some embodiments, the coating material layer 200 comprises a photosensitive material. In some embodiments, the coating material layer 200 comprises quantum dots. In some embodiments, the coating material layer 200 comprises a carbon black material, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like. In some embodiments, the coating material layer 200 comprises a blackbody material having an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or greater for visible light.

[0082] As shown in FIGS. 10A and 10B, FIG. 10A is a top view, and FIG. 10B is a cross-sectional view taken along line 10B-10B' in FIG. 10A.

[0083] In some embodiments, multiple cladding layers 200A, 200B, 200C, 200D, and 200E are formed to surround sidewalls 215S, 225S, 235S, 245S, and 255S of electrodes 215, 225, 235, 245, and 255, and the cladding material layer 200 is patterned to expose top surfaces 215a, 225a, 235a, 245a, and 255a of electrodes 215, 225, 235, 245, and 255. In some embodiments, the cladding layers 200A, 200B, 200C, 200D, and 200E are discontinuous with one another between electrodes 215, 225, 235, 245, and 255. In some embodiments, the cladding material layer 200 can be patterned using a photolithography process.

[0084] In some embodiments, after exposure, coating material layer 200 is wetted with a solution and developed. As shown in FIG. 10B, portions of coating material layer 200 are removed to form cladding layers 200A, 200B, 200C, 200D, and 200E. In some embodiments, after forming cladding layers 200A, 200B, 200C, 200D, and 200E, a cleaning operation can be performed to clean exposed surfaces of cladding layers 200A, 200B, 200C, 200D, and 200E and electrodes 215, 225, 235, 245, and 255. In some embodiments, the cleaning operation can be performed at a temperature between 30° C. and 80° C. In some embodiments, the cleaning operation can be performed using a cleaning agent such as water or isopropyl alcohol (IPA) and ultrasonic waves.

[0085] As shown in FIGS. 11A and 11B, FIG. 11A is a top view, and FIG. 11B is a cross-sectional view taken along line 11B-11B' in FIG. 11A.

[0086] In some embodiments, photosensitive insulating material 300A is disposed over electrodes 215, 225, 235, 245, and 255 and cladding layers 200A, 200B, 200C, 200D, and 200E. In some embodiments, photosensitive insulating material 300A can be formed by spin coating or deposition.

[0087] In some embodiments, photosensitive insulating material 300A includes a photosensitive material. In some embodiments, photosensitive insulating material 300A includes a blackbody material having an absorption rate of 90% or more for visible light. In some embodiments, the absorption rate of cladding layers 200A, 200B, 200C, 200D, and 200E for light having a specific wavelength is greater than the absorption rate of photosensitive insulating material 300A for light having the specific wavelength. In some embodiments, the specific wavelength is less than 400 nm, less than 350 nm, less than 300 nm, less than 250 nm, less than 200 nm, or less than 150 nm.

[0088] As shown in FIGS. 12A and 12B, FIG. 12A is a top view, and FIG. 12B is a cross-sectional view taken along line 12B-12B' in FIG. 12A.

[0089] In some embodiments, the photosensitive insulating material 300A is patterned to form a photosensitive insulating material layer 300 that exposes a plurality of effective light-emitting areas on the top surfaces 215a, 225a, 235a, 245a, and 255a of the electrodes 215, 225, 235, 245, and 255. In some embodiments, the photosensitive insulating material 300A can be patterned by a photolithography process.

[0090] In some embodiments, after exposure, the photosensitive insulating material 300A is wetted with a solution and developed. As shown in FIG. 12B, portions of the photosensitive insulating material 300A are removed to form the photosensitive insulating material layer 300. In some embodiments, after forming the photosensitive insulating material layer 300, a cleaning operation may be performed to clean the exposed surfaces of the convex photosensitive insulating material layer 300 and the electrodes 215, 225, 235, 245, and 255. In some embodiments, the cleaning operation may be performed at a temperature between 30°C and 80°C. In some embodiments, the cleaning operation may be performed using a cleaning agent such as water or isopropyl alcohol (IPA) and ultrasonic waves.

[0091] As shown in FIGS. 13A and 13B, FIG. 13A is a top view, and FIG. 13B is a cross-sectional view taken along line 13B-13B' in FIG. 13A.

[0092] In some embodiments, an organic light emitting material is provided over the effective light emitting areas 215a, 225a, 235a, 245a, and 255a of the top surfaces 215a, 225a, 235a, 245a, and 255a of the electrodes 215, 225, 235, 245, and 255. In some embodiments, the electrode 216 is provided over the organic light emitting material.

[0093] In some embodiments, a carrier injection layer 261, a first carrier transport layer 262, a second carrier transport layer 263, an organic light-emitting layer 264, and an organic carrier transport layer 265 are sequentially disposed on the photosensitive insulating material layer 300 and the exposed top surfaces 215a, 225a, 235a, 245a, and 255a of the electrodes 215, 225, 235, 245, and 255. In some embodiments, each organic light-emitting unit has a separate second carrier transport layer 263 and organic light-emitting layer 264.

[0094] The foregoing summary has outlined features of some embodiments so that those skilled in the art may better understand each aspect of the present disclosure. It will be apparent to those skilled in the art that other manufacturing processes and structures can be readily designed or adapted based on this disclosure to achieve the same purposes and / or advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent structures are capable of numerous changes, substitutions, and alterations without departing from the spirit and scope of the present disclosure, yet remain within the spirit and scope of the present disclosure. [Explanation of symbols]

[0095] 100 boards 101 Organic Light Emitting Unit 102 Organic Light Emitting Unit 103 Organic Light Emitting Unit 104 Organic Light Emitting Unit 105 Organic Light Emitting Unit 10 Light-emitting element 200 coating material layer 200A Cladding Layer 200A1 through hole 200B cladding layer 200B1 through hole 200C cladding layer 200D cladding layer 200E cladding layer 20 Light-emitting layer 215 Electrode 2151 Edge 2152 Edge 2153 Edge 2154 Edge 215a Top 215P part 215S side wall 216 Electrode 225 Electrode 2251 Edge 2252 Edge 2253 Edge 2254 Edge 225a Top 225P part 225S side wall 235 Electrode 235a Top 245 Electrode 245a Top 255 electrode 255a Top 261 Carrier injection layer 262 First Carrier Transport Layer 263 Second Carrier Transport Layer 264 Organic Light-Emitting Layer 265 Organic Carrier Transport Layer 269 ​​Organic layer 300 Photosensitive insulating material layer 300A Photosensitive Insulating Material 300C recessed part 30 spacer 310 Bump 310A Bump 310A1 through hole 310B Bump 310B1 through hole 40 Covering layer D1 Distance D2 distance D3 Distance D4 Distance D5 distance D6 distance D7 distance D8 distance R11 area R12 area R13 area R14 area R21 area R22 area R23 area R24 area W1 width W2 width W3 width W4 width W5 width W6 width W7 width W8 width AA line 2B-2B´ line 3B-3B´ line 4B-4B´ Line 6B-6B´ line 7B-7B´ line 8B-8B´ line 9B-9B´ line 10B-10B´ line 11B-11B´ line 12B-12B´ line 13B-13B´ line

Claims

1. a plurality of organic light-emitting units; a photosensitive insulating material layer covering the organic light emitting units and having a plurality of recesses for exposing a plurality of effective light emitting areas of the organic light emitting units; a plurality of cladding layers surrounding the sidewalls of each of the organic light-emitting units and interposed between two adjacent sidewalls of the organic light-emitting units; Equipped with Each organic light-emitting unit comprises a plurality of electrodes; each clad layer covers a sidewall of one electrode and is located between a peripheral region of the one electrode and the photosensitive insulating material layer; A light emitting device in which the optical absorptance of each clad layer is greater than the optical absorptance of the photosensitive insulating material layer.

2. 10. The light-emitting device of claim 1, wherein the plurality of cladding layers are connected to the photosensitive insulating material layer, and the plurality of cladding layers and the photosensitive insulating material layer comprise the same material.

3. 2. The light-emitting device of claim 1, wherein the plurality of cladding layers are connected to the photosensitive insulating material layer, the plurality of cladding layers and the photosensitive insulating material layer form an isolation structure comprising the same non-conductive material, and the isolation structure covers a non-light-emitting region of the light-emitting device.

4. The light-emitting device of claim 1 , wherein the plurality of cladding layers comprise a conductive material, and the plurality of cladding layers are separated from one another.

5. The light-emitting device according to claim 1 , wherein the plurality of cladding layers comprises a metal, a resin, graphite, or any combination thereof.

6. The light emitting device of claim 1 , wherein the plurality of cladding layers comprises a photosensitive material.

7. The light-emitting device according to claim 1 , further comprising a transparent substrate, wherein the plurality of organic light-emitting units are disposed on the transparent substrate.

8. providing a substrate; forming a plurality of electrodes on the substrate; forming a coating material layer over the plurality of electrodes; patterning the cladding material layer to form cladding layers that surround sidewalls of the electrodes, expose top surfaces of the electrodes, and are discontinuous between the electrodes; providing a photosensitive insulating material over the plurality of electrodes and the plurality of cladding layers; patterning the photosensitive insulating material to form a photosensitive insulating material layer exposing a plurality of effective light emitting areas on the top surfaces of the plurality of electrodes; providing an organic light emitting material over the plurality of effective light emitting areas of the plurality of electrodes; Including, each clad layer covers a sidewall of one electrode and is located between a peripheral region of the one electrode and the photosensitive insulating material layer; A method for manufacturing a light emitting device, wherein the optical absorptance of each clad layer is greater than the optical absorptance of the photosensitive insulating material layer.

9. 9. The method of claim 8, wherein the organic light-emitting material comprises an electron transport layer (ETL), an electron injection layer (EIL), an emissive layer (EM), a hole blocking layer (HBL), a hole injection layer (HIL), a hole transport layer (HTL), or any combination thereof.

10. The manufacturing method according to claim 8, wherein the coating material layer is formed by a spin coating method or a deposition method.

11. The method according to claim 8, wherein the coating material layer is patterned by a photolithography process.

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