Semiconductor element and semiconductor device

Abstract

Provided are a semiconductor element and a semiconductor device which excel in semiconductor characteristics and heat-dissipating properties. The semiconductor element includes a layered structural body in which an oxide semiconductor film containing, as a main component, an oxide having a corundum structure is layered on a conductive substrate directly or via another layer. The conductive substrate has an area larger than that of the oxide semiconductor film. The semiconductor device is formed by joining, using a joining member, the semiconductor element with a lead frame, a circuit substrate, or a heat-dissipating substrate.

Description

[Technical Field]

[0001] The present invention relates to a semiconductor element useful as a power device or the like, and a semiconductor device and a semiconductor system using the semiconductor element. [Background technology]

[0002] Gallium oxide (Ga2O3) is a transparent semiconductor with a wide bandgap of 4.8-5.3 eV at room temperature, which has little absorption of visible or ultraviolet light. Therefore, it is a promising material for use in optoelectronic devices and transparent electronics, particularly those operating in the deep ultraviolet region. In recent years, photodetectors, light-emitting diodes (LEDs), and transistors based on Ga2O3 have been developed (see Non-Patent Document 1).

[0003] Gallium oxide (Ga2O3) has five crystal structures: α, β, γ, σ, and ε, and the most stable structure is generally β-Ga2O3. However, since β-Ga2O3 has a β-gallium structure, it differs from the crystal systems generally used in electronic materials and is not necessarily suitable for use in semiconductor devices. In addition, the growth of a β-Ga2O3 thin film requires a high substrate temperature and a high degree of vacuum, which increases the manufacturing cost. Furthermore, as described in Non-Patent Document 2, in β-Ga2O3, a high concentration (for example, 1×10 19 / cm 3 Even the dopant (Si) of the above ions cannot be used as a donor unless it is annealed at a high temperature of 800 to 1100°C after ion implantation.

[0004] On the other hand, α-Ga2O3 has the same crystal structure as the widely used sapphire substrate, making it suitable for use in optical and electronic devices. Furthermore, it has a wider band gap than β-Ga2O3, making it particularly useful in power devices. For this reason, semiconductor elements using α-Ga2O3 as a semiconductor are eagerly awaited.

[0005] Patent Documents 1 and 2 describe semiconductor elements that use β-Ga2O3 as a semiconductor and, as electrodes that provide compatible ohmic characteristics, use two layers consisting of a Ti layer and an Au layer, three layers consisting of a Ti layer, an Al layer, and an Au layer, or four layers consisting of a Ti layer, an Al layer, a Ni layer, and an Au layer. Furthermore, Patent Document 3 describes a semiconductor element that uses β-Ga2O3 as a semiconductor and uses either Au, Pt, or a laminate of Ni and Au as an electrode that can obtain Schottky characteristics compatible with β-Ga2O3. However, when the electrodes described in Patent Documents 1 to 3 are applied to semiconductor devices using α-Ga2O3 as a semiconductor, there are problems such as the electrodes not functioning as Schottky electrodes or ohmic electrodes, the electrodes not bonding to the film, and the semiconductor properties being impaired. Furthermore, the electrode configurations described in Patent Documents 1 to 3 have problems such as leakage current occurring from the electrode end, making it impossible to obtain a semiconductor device that is practically satisfactory.

[0006] In particular, in recent years, when gallium oxide is used as a semiconductor, there have been problems such as heat dissipation problems and adverse effects on semiconductor characteristics, etc. In response to these problems, the present applicants have considered producing a semiconductor element by bonding a conductive substrate to a semiconductor film made of gallium oxide, but when cutting the conductive substrate, cracks and impurities occur in the gallium oxide, and burrs are also generated, making it difficult to produce a satisfactory semiconductor element. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-260101 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-81468 [Patent Document 3] Japanese Patent Application Laid-Open No. 2013-12760 [Non-patent literature]

[0008] [Non-Patent Document 1] Jun Liang Zhao et al, “UV and Visible Electroluminescence From a Sn:Ga2O3 / n+-Si Heterojunction by Metal-Organic Chemical Vapor Deposition”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO.5 MAY 2011 [Non-patent document 2] Kohei Sasaki et al, “Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts”, Applied Physics Express 6 (2013) 086502 Summary of the Invention [Problem to be solved by the invention]

[0009] An object of the present invention is to provide a semiconductor element and a semiconductor device including an oxide semiconductor film, which have excellent heat dissipation properties and semiconductor characteristics. [Means for solving the problem]

[0010] As a result of intensive research to achieve the above object, the present inventors have succeeded in creating a semiconductor element including an oxide semiconductor film, which eliminates problems such as burrs, improves semiconductor characteristics, and further has excellent heat dissipation properties, by fabricating a semiconductor element by bonding a conductive substrate that is slightly larger than an oxide semiconductor film and cutting it from the conductive substrate side, and have found that such a semiconductor element can solve all of the above-mentioned conventional problems at once. Furthermore, after obtaining the above findings, the present inventors conducted further studies and completed the present invention.

[0011] That is, the present invention relates to the following inventions. [1] A semiconductor element including a stacked structure in which an oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on a conductive substrate directly or via another layer, wherein the conductive substrate has an area larger than that of the oxide semiconductor film. [2] A semiconductor element including a stacked structure in which an oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on an electrode directly or via another layer, wherein the electrode has an area larger than that of the oxide semiconductor film. [3] The semiconductor device according to [1] or [2], wherein the oxide contains at least gallium. [4] The semiconductor device according to [1] or [2], wherein the oxide is α-Ga2O3 or a mixed crystal thereof. [5] The semiconductor element according to [1], wherein the coefficient of linear thermal expansion of the conductive substrate is equal to or smaller than the coefficient of linear thermal expansion of the oxide semiconductor film. [6] The oxide semiconductor film includes at least a first side, a second side, a first crystal axis, and a second crystal axis; the linear thermal expansion coefficient in the first crystal axis direction is smaller than the linear thermal expansion coefficient in the second crystal axis direction; the first side direction is parallel or approximately parallel to the first crystal axis direction, the second side direction is parallel or approximately parallel to the second crystal axis direction, The semiconductor element according to [1], wherein the conductive substrate includes at least a side corresponding to the first side and a side corresponding to the second side, and the side corresponding to the first side is longer than the side corresponding to the second side. [7] The semiconductor element according to [1], wherein the conductive substrate is a metal substrate or a semiconductor substrate. [8] The semiconductor element according to [1], wherein the conductive substrate is slightly larger than the oxide semiconductor film. [9] The semiconductor element according to [2], wherein the electrode is slightly larger than the oxide semiconductor film.

[10] The semiconductor device according to [1], wherein the area of ​​the conductive substrate is 1.1 to 4 times the area of ​​the oxide semiconductor film.

[11] The semiconductor element according to [2], wherein the area of ​​the electrode is 1.1 to 4 times the area of ​​the oxide semiconductor film.

[12] The semiconductor element according to [1], wherein the side surface of the conductive substrate is a cut surface, and the cut surface has a step or burr.

[13] The semiconductor element according to [1] or [2] above, which is a vertical device.

[14] The semiconductor element according to [1] or [2] above, which is a power device.

[15] The semiconductor element according to [1] or [2], which is a Schottky barrier diode (SBD), a metal oxide semiconductor field effect transistor (MOSFET), or an insulated gate bipolar transistor (IGBT).

[16] A semiconductor device constructed by bonding at least a semiconductor element to a lead frame, a circuit board, or a heat dissipation substrate with a bonding member, wherein the semiconductor element is the semiconductor element described in [1] or [2] above.

[17] The semiconductor device according to

[16] , which is a power module, an inverter or a converter.

[18] The semiconductor device according to

[16] above, which is a power card.

[19] A semiconductor system comprising a semiconductor element or a semiconductor device, wherein the semiconductor element is the semiconductor element described in [1] or [2] above, and the semiconductor device is the semiconductor device described in any one of

[16] to

[18] above. [Effects of the Invention]

[0012] The semiconductor element of the present invention is excellent in semiconductor properties and heat dissipation. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a cross-sectional view schematically showing a preferred embodiment of a semiconductor element of the present invention. [Figure 2]2A to 2C are diagrams illustrating an embodiment of a preferred method for manufacturing the semiconductor element of FIG. [Figure 3] 2A to 2C are diagrams illustrating an embodiment of a preferred method for manufacturing the semiconductor element of FIG. [Figure 4] 2A to 2C are diagrams illustrating an embodiment of a preferred method for manufacturing the semiconductor element of FIG. [Figure 5] 2A to 2C are diagrams illustrating an embodiment of a preferred method for manufacturing the semiconductor element of FIG. [Figure 6] 1 is a cross-sectional view schematically showing a preferred embodiment of a semiconductor element of the present invention. [Figure 7] Figure 1 shows cross-sectional SEM images of test examples, where (a) shows a porous layer made of silver formed by normal annealing, and (b) shows a porous layer that has been further subjected to thermocompression bonding to reduce the porosity to 10% or less. [Figure 8] FIG. 1 is a diagram schematically illustrating a preferred example of a power supply system. [Figure 9] FIG. 1 is a diagram schematically illustrating a preferred example of a system device. [Figure 10] FIG. 1 is a diagram schematically illustrating a preferred example of a power supply circuit diagram of a power supply device. [Figure 11] 1A and 1B are diagrams schematically illustrating a preferred example of a semiconductor device. [Figure 12] FIG. 1 is a diagram schematically illustrating a preferred example of a power card. [Figure 13] 1 is a cross-sectional view schematically showing a preferred embodiment of a semiconductor element of the present invention. [Figure 14] 1 is a cross-sectional view schematically showing a preferred embodiment of a semiconductor element of the present invention. [Figure 15] FIG. 10 is a diagram showing evaluation results of a simulation of heat distribution in an example. [Figure 16] 1 is a diagram showing the evaluation results of a simulation of heat distribution in an example, in which the arrows indicate the direction of heat transfer. [Figure 17] 1 is a cross-sectional view schematically showing a preferred embodiment of a semiconductor element of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] The semiconductor element of the present invention is a semiconductor element including a stacked structure in which an oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on a conductive substrate directly or via another layer, and is characterized in that the conductive substrate has an area larger than that of the oxide semiconductor film.

[0015] Furthermore, a semiconductor element of the present invention is a semiconductor element including a stacked structure in which an oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on an electrode directly or via another layer, and is characterized in that the electrode has an area larger than that of the oxide semiconductor film.

[0016] In the present invention, the linear thermal expansion coefficient of the conductive substrate is preferably equal to or smaller than that of the oxide semiconductor film. Furthermore, in the present invention, the oxide semiconductor film includes at least a first side, a second side, a first crystal axis, and a second crystal axis, the linear thermal expansion coefficient in the first crystal axis direction is smaller than the linear thermal expansion coefficient in the second crystal axis direction, the first side direction is parallel or approximately parallel to the first crystal axis direction, and the second side direction is parallel or approximately parallel to the second crystal axis direction. The conductive substrate includes at least a side corresponding to the first side and a side corresponding to the second side, and the side corresponding to the first side is longer than the side corresponding to the second side, which is preferable because it can further improve the heat dissipation of the semiconductor element. Note that the "crystal axis" refers to a coordinate axis derived from a crystal structure to systematically represent crystal planes, rotational symmetry, etc. Furthermore, the "first side" may be straight or curved, but in the present invention, it is preferably straight in order to improve the relationship with the crystal axis. The "second side" may also be straight or curved, but in the present invention, it is preferably straight in order to improve the relationship with the crystal axis. The "linear thermal expansion coefficient" is measured in accordance with JIS R 3102 (1995). "Side direction" refers to the direction of the side that constitutes a specific shape. "Approximately parallel" means that they do not have to be completely parallel, but may be slightly deviated from that (for example, the angle they form may be greater than 0° and less than 10°).

[0017] In the present invention, it is also preferable that the conductive substrate be one size larger than the oxide semiconductor film, since this allows the semiconductor element to be more easily miniaturized while maintaining excellent heat dissipation. Here, "one size larger" means, for example, that the area of ​​the conductive substrate is 1.1 to 4 times the area of ​​the oxide semiconductor film. In the present invention, it is also preferable that the side surface of the conductive substrate is a cut surface, and that the cut surface has steps or burrs.

[0018] The oxide semiconductor film (hereinafter simply referred to as "semiconductor layer" or "semiconductor film") is not particularly limited as long as it has a corundum structure. In the present invention, the oxide preferably contains one or more metals selected from Group 9 (e.g., cobalt, rhodium, or iridium) and Group 13 (e.g., aluminum, gallium, or indium) of the periodic table, more preferably at least one metal selected from aluminum, indium, gallium, and iridium, even more preferably at least gallium or iridium, and most preferably at least gallium. In the present invention, it is more preferable that the principal surface of the oxide semiconductor film is an m-plane, since this can further suppress the diffusion of oxygen and improve electrical properties. The oxide semiconductor film may have an off-axis angle. In the present invention, the oxide is preferably α-Ga2O3 or a mixed crystal thereof. The term "main component" means that the oxide is contained in an atomic ratio of preferably 50% or more, more preferably 70% or more, and even more preferably 90% or more of the total components of the semiconductor layer, and may be 100%. The thickness of the semiconductor layer is not particularly limited, and may be 1 μm or less or 1 μm or more, but in the present invention, it is preferably 1 μm or more, and more preferably 10 μm or more. The surface area of ​​the semiconductor film is not particularly limited, but is preferably 1 mm 2 May be more than 1 mm 2 May be less than 10mm 2 ~300cm 2 Preferably, 100 mm 2 ~100cm 2It is more preferable that the semiconductor film is a single-crystal film, but may be a polycrystalline film or a crystalline film containing polycrystalline. The semiconductor film is also preferably a multilayer film including at least a first semiconductor layer and a second semiconductor layer, and when a Schottky electrode is provided on the first semiconductor layer, the multilayer film is also preferably a multilayer film in which the carrier density of the first semiconductor layer is lower than the carrier density of the second semiconductor layer. In this case, the second semiconductor layer usually contains a dopant, and the carrier density of the semiconductor layer can be appropriately set by adjusting the doping amount.

[0019] The oxide semiconductor is preferably a metal oxide, and the metal oxide is not particularly limited, but preferably contains at least one or more metals from periods 4 to 6 of the periodic table, more preferably at least gallium, indium, rhodium, or iridium, and most preferably gallium. In the present invention, the metal oxide also preferably contains gallium and indium and / or aluminum.

[0020] The semiconductor layer preferably contains a dopant. The dopant is not particularly limited and may be a known one. Examples of the dopant include n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium, or niobium, or p-type dopants such as magnesium, calcium, or zinc. In the present invention, the semiconductor layer preferably contains an n-type dopant, and is more preferably an n-type oxide semiconductor layer. In the present invention, the n-type dopant is preferably Sn, Ge, or Si. The content of the dopant in the composition of the semiconductor layer is preferably 0.00001 atomic % or more, more preferably 0.00001 atomic % to 20 atomic %, and most preferably 0.00001 atomic % to 10 atomic %. More specifically, the concentration of the dopant is usually about 1×10 16 / cm 3 ~1×10 22 / cm 3Alternatively, the dopant concentration may be, for example, about 1×10 17 / cm 3 According to one aspect of the present invention, the dopant may be at a low concentration of about 1×10 20 / cm 3 The concentration of the fixed charges in the semiconductor layer is not particularly limited, but in the present invention, it is preferably 1×10 17 / cm 3 The following is preferable because it allows a depletion layer to be formed well in the semiconductor layer.

[0021] The semiconductor layer may be formed by a known method. Examples of the method for forming the semiconductor layer include CVD, MOCVD, MOVPE, mist CVD, mist epitaxy, MBE, HVPE, pulsed growth, and ALD. In the present invention, the method for forming the semiconductor layer is preferably mist CVD or mist epitaxy. In the mist CVD or mist epitaxy method, for example, a raw material solution is atomized (atomization step), the droplets are suspended, and the atomized droplets are transported to a substrate by a carrier gas (transport step). Next, the atomized droplets are thermally reacted near the substrate to deposit a semiconductor film containing an oxide as a main component on the substrate (film formation step), thereby forming the semiconductor layer.

[0022] (Atomization process) In the atomization step, the raw solution is atomized. The atomization means for the raw solution is not particularly limited as long as it can atomize the raw solution, and any known means may be used. However, in the present invention, an atomization means using ultrasonic waves is preferred. The atomized droplets obtained using ultrasonic waves have an initial velocity of zero and are suspended in the air, which is preferable. For example, rather than being sprayed like a spray, the atomized droplets (including mist) are suspended in space and can be transported as a gas, which is highly suitable because they are not damaged by collision energy. The droplet size is not particularly limited and may be on the order of a few millimeters, but is preferably 50 μm or less, and more preferably 100 nm to 10 μm.

[0023] (Raw material solution) The raw material solution is not particularly limited as long as it can be atomized and contains a raw material capable of forming a semiconductor film, and may be an inorganic material or an organic material. In the present invention, the raw material is preferably a metal or a metal compound, and more preferably contains one or more metals selected from aluminum, gallium, indium, iron, chromium, vanadium, titanium, rhodium, nickel, cobalt, and iridium.

[0024] In the present invention, the raw material solution can be suitably prepared by dissolving or dispersing the metal in the form of a complex or salt in an organic solvent or water. Examples of the complex include acetylacetonate complexes, carbonyl complexes, ammine complexes, and hydride complexes. Examples of the salt include organic metal salts (e.g., metal acetates, metal oxalates, and metal citrates), metal sulfides, metal nitrates, metal phosphates, and metal halides (e.g., metal chlorides, metal bromides, and metal iodides).

[0025] It is also preferable to mix additives such as hydrohalic acid and oxidizing agents into the raw material solution. Examples of hydrohalic acids include hydrobromic acid, hydrochloric acid, and hydroiodic acid. Among these, hydrobromic acid and hydroiodic acid are preferred because they can more efficiently suppress the generation of abnormal grains. Examples of the oxidizing agent include peroxides such as hydrogen peroxide (H2O2), sodium peroxide (Na2O2), barium peroxide (BaO2), and benzoyl peroxide (C6H5CO)2O2, hypochlorous acid (HClO), perchloric acid, nitric acid, ozone water, and organic peroxides such as peracetic acid and nitrobenzene.

[0026] The raw material solution may contain a dopant. Adding a dopant to the raw material solution allows for better doping. The dopant is not particularly limited as long as it does not impair the objectives of the present invention. Examples of the dopant include n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium, or niobium, and p-type dopants such as Mg, H, Li, Na, K, Rb, Cs, Fr, Be, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Ti, Pb, N, or P. The content of the dopant is appropriately determined using a calibration curve showing the relationship between the desired carrier density and the dopant concentration in the raw material.

[0027] The solvent for the raw material solution is not particularly limited and may be an inorganic solvent such as water, an organic solvent such as alcohol, or a mixed solvent of an inorganic solvent and an organic solvent. In the present invention, the solvent preferably contains water, and more preferably is water or a mixed solvent of water and alcohol.

[0028] (Transportation process) In the transport step, the atomized droplets are transported into the film-forming chamber using a carrier gas. The carrier gas is not particularly limited as long as it does not impede the objectives of the present invention. Suitable examples include oxygen, ozone, inert gases such as nitrogen and argon, and reducing gases such as hydrogen gas and forming gas. The carrier gas may be one type, or two or more types. A dilution gas with a reduced flow rate (e.g., a 10-fold dilution gas) may also be used as a second carrier gas. The number of carrier gas supply locations may be one or more. The flow rate of the carrier gas is not particularly limited, but is preferably 0.01 to 20 L / min, more preferably 1 to 10 L / min. In the case of a dilution gas, the flow rate of the dilution gas is preferably 0.001 to 2 L / min, more preferably 0.1 to 1 L / min.

[0029] (Film forming process) In the film-forming step, the atomized droplets are thermally reacted near the substrate to form the semiconductor film on the substrate. The thermal reaction may be carried out at a temperature equal to or higher than the evaporation temperature of the solvent, but is not particularly limited to the reaction conditions, as long as the objectives of the present invention are not impaired. In this step, the thermal reaction is typically carried out at a temperature equal to or higher than the evaporation temperature of the solvent. A moderate temperature (e.g., 1000°C) is preferred, with a temperature of 650°C or lower being more preferred, and a temperature between 300°C and 650°C being most preferred. The thermal reaction may be carried out under vacuum, in an oxygen-free atmosphere (e.g., an inert gas atmosphere), in a reducing gas atmosphere, or in an oxygen atmosphere, as long as the objectives of the present invention are not impaired. However, the thermal reaction is preferably carried out under an inert gas atmosphere or an oxygen atmosphere. The thermal reaction may be carried out under atmospheric pressure, elevated pressure, or reduced pressure, but is preferably carried out under atmospheric pressure in the present invention. The thickness of the semiconductor film can be controlled by adjusting the film-forming time.

[0030] (Base) The substrate is not particularly limited as long as it can support the semiconductor film. The material of the substrate is also not particularly limited as long as it does not impede the object of the present invention, and may be a known substrate, an organic compound, or an inorganic compound. The substrate may have any shape, and is effective for all shapes, such as a plate-like shape (e.g., a flat plate or a disk), a fiber-like shape, a rod-like shape, a column-like shape, a rectangular column-like shape, a cylindrical shape, a spiral shape, a spherical shape, a ring-like shape, etc., but in the present invention, a substrate is preferred. The thickness of the substrate is not particularly limited in the present invention.

[0031] The substrate is not particularly limited as long as it is plate-shaped and serves as a support for the semiconductor film. It may be an insulating substrate, a semiconductor substrate, a metal substrate, or a conductive substrate. However, the substrate is preferably an insulating substrate, and also preferably a substrate having a metal film on its surface. Examples of the substrate include a base substrate containing as its main component a substrate material having a corundum structure, a base substrate containing as its main component a substrate material having a β-gallia structure, or a base substrate containing as its main component a substrate material having a hexagonal crystal structure. Here, "main component" means that the substrate material having the specific crystal structure preferably accounts for 50% or more, more preferably 70% or more, and even more preferably 90% or more, in atomic ratio, of the total components of the substrate material; it may be 100%.

[0032] The substrate material is not particularly limited, and may be any known material, as long as it does not impede the objectives of the present invention. Suitable examples of substrate materials having the corundum structure include α-Al2O3 (sapphire substrate) and α-Ga2O3, with more preferred examples including a-plane sapphire substrates, m-plane sapphire substrates, r-plane sapphire substrates, c-plane sapphire substrates, and α-type gallium oxide substrates (a-plane, m-plane, or r-plane). Examples of base substrates primarily composed of substrate materials having a β-gallium structure include β-Ga2O3 substrates and mixed crystal substrates containing Ga2O3 and Al2O3, with Al2O3 being greater than 0 wt% and less than 60 wt%. Examples of base substrates primarily composed of substrate materials having a hexagonal crystal structure include SiC substrates, ZnO substrates, and GaN substrates.

[0033] In the present invention, an annealing treatment may be performed after the film formation step. The annealing temperature is not particularly limited as long as it does not impede the object of the present invention, and is usually 300°C to 650°C, and preferably 350°C to 550°C. The annealing time is usually 1 minute to 48 hours, preferably 10 minutes to 24 hours, and more preferably 30 minutes to 12 hours. The annealing may be performed in any atmosphere as long as it does not impede the object of the present invention. It may be an oxygen-free atmosphere or an oxygen atmosphere. Examples of the oxygen-free atmosphere include an inert gas atmosphere (e.g., a nitrogen atmosphere) or a reducing gas atmosphere, but in the present invention, an inert gas atmosphere is preferred, and a nitrogen atmosphere is more preferred.

[0034] In the present invention, the semiconductor film may be provided directly on the substrate, or may be provided via another layer such as a stress relaxation layer (e.g., a buffer layer, an ELO layer, etc.), a peeling sacrificial layer, etc. The means for forming each layer is not particularly limited and may be any known means, but in the present invention, a mist CVD method is preferred.

[0035] In the present invention, the semiconductor film may be attached to the conductive substrate having a larger surface area than the semiconductor film, and then peeled off from the base or the like by a known method, and then used as the semiconductor layer in a semiconductor element, or the semiconductor film may be used as the semiconductor layer as it is in a semiconductor element in which the semiconductor film and the conductive substrate having a larger surface area than the semiconductor film are thermally connected.

[0036] Furthermore, in the present invention, a laminated structure consisting of the electrode and the semiconductor film laminated on the electrode directly or via another layer may be attached to the conductive substrate having a surface area larger than that of the semiconductor film, and then peeled off from the base or the like using a known method, and then used as the laminated structure in a semiconductor element, or the laminated structure may be used as it is in a semiconductor element in which the semiconductor film and the electrode are thermally connected to the conductive substrate having a surface area larger than that of the semiconductor film.

[0037] The material of the electrode is not particularly limited as long as it is conductive and can be used as an electrode, as long as it does not impede the object of the present invention. The material of the electrode may be a conductive inorganic material or a conductive organic material. In the present invention, the material of the electrode is preferably a metal. Suitable examples of the metal include at least one metal selected from Groups 4 to 11 of the periodic table. Examples of metals in Group 4 of the periodic table include titanium (Ti), zirconium (Zr), and hafnium (Hf). Examples of metals in Group 5 of the periodic table include vanadium (V), niobium (Nb), and tantalum (Ta). Examples of metals in Group 6 of the periodic table include chromium (Cr), molybdenum (Mo), and tungsten (W). Examples of metals in Group 7 of the periodic table include manganese (Mn), technetium (Tc), and rhenium (Re). Examples of metals in Group 8 of the periodic table include iron (Fe), ruthenium (Ru), and osmium (Os). Examples of metals in Group 9 of the periodic table include cobalt (Co), rhodium (Rh), and iridium (Ir). Examples of metals in Group 10 of the periodic table include nickel (Ni), palladium (Pd), and platinum (Pt). Examples of metals in Group 11 of the periodic table include copper (Cu), silver (Ag), and gold (Au). The thickness of the electrode is not particularly limited, but is preferably 0.1 nm to 10 μm, more preferably 5 nm to 500 nm, and most preferably 10 nm to 200 nm. The electrode may be a Schottky electrode or an ohmic electrode, but is preferably an ohmic electrode in the present invention.

[0038] In the present invention, the oxide semiconductor film and the electrode are preferably formed on the conductive substrate via a porous layer. Furthermore, in the present invention, the porosity of the porous layer is preferably 10% or less. Here, "porosity" refers to the ratio of the volume of the space generated by voids to the volume of the porous layer (volume including the voids). The porosity of the porous layer can be determined, for example, based on cross-sectional photographs taken using a scanning electron microscope (SEM). Specifically, cross-sectional photographs (SEM images) of the porous layer are taken at multiple positions. Next, commercially available image analysis software is used to binarize the SEM images, and the proportion of areas corresponding to holes (voids) in the SEM images (e.g., black areas) is determined. The proportions of black areas determined from the SEM images taken at multiple positions are averaged to determine the porosity of the porous layer. The term "porous layer" as used herein includes not only porous films, which are continuous film-like structures, but also porous aggregates.

[0039] The porous layer is not particularly limited, but preferably contains a metal, more preferably a precious metal such as gold (Au), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), or ruthenium (Ru), and most preferably silver (Ag). The porous layer may be a porous substrate coated with a metal film such as the precious metal. However, in the present invention, the porous layer is preferably a porous layer of the metal, more preferably a porous layer of the precious metal, and most preferably a porous layer of silver (Ag). The porous layer may be a single layer or a multilayer. The thickness of the porous layer is not particularly limited as long as it does not impede the objectives of the present invention, but is preferably about 10 nm to about 1 mm, more preferably 10 nm to 200 μm, and more preferably 30 nm to 50 μm.

[0040] The porous layer can be suitably obtained by sintering a metal (preferably a noble metal). The means for achieving a porosity of 10% in the porous layer are not particularly limited and may be any known means. By appropriately setting sintering conditions such as sintering time, pressure, and sintering temperature, the porosity of the porous layer can be easily achieved. For example, the porosity can be adjusted to 10% or less by heat bonding (thermocompression bonding). More specifically, for example, sintering for a longer sintering time than usual under a certain pressure. Figure 7(a) shows the porosity of a test example in which a porous layer made of Ag was bonded by conventional annealing. As shown in Figure 7(a), the porosity of the porous layer normally exceeds 10%, but as shown in Figure 7(b), if the layer is further heated to, for example, 300°C to 500°C and pressed under a pressure of, for example, 0.2 MPa to 10 MPa for an hour, the porosity becomes 10% or less. By using such a porous layer with a porosity of 10% or less in a semiconductor element, it is possible to alleviate warping, thermal stress concentration, etc. without impairing the semiconductor properties.

[0041] The conductive substrate is not particularly limited as long as it is conductive and can support a semiconductor layer. The material of the conductive substrate is also not particularly limited as long as it does not impede the object of the present invention. Examples of the material for the conductive substrate include metals (e.g., aluminum, nickel, chromium, nichrome, copper, gold, silver, platinum, rhodium, indium, molybdenum, and tungsten), conductive metal oxides (e.g., ITO (InSnO compound), FTO (tin oxide doped with fluorine, etc.), and zinc oxide), conductive carbon, and semiconductors (e.g., SiC, GaN, Si, and diamond). In the present invention, the conductive substrate is preferably a metal substrate or a semiconductor substrate, and more preferably a metal substrate. When the conductive substrate is a semiconductor substrate, the conductive substrate is preferably a SiC substrate. When the conductive substrate is a metal substrate, the conductive substrate preferably contains a transition metal, more preferably contains at least one metal selected from Groups 6 and 11 of the periodic table, and more preferably contains a metal of Group 6 of the periodic table. Examples of metals in Group 6 of the periodic table include at least one metal selected from chromium (Cr), molybdenum (Mo), and tungsten (W). In the present invention, the metals in Group 6 of the periodic table preferably include molybdenum. Examples of metals in Group 11 of the periodic table include at least one metal selected from copper (Cu), silver (Au), and gold (Au). In the present invention, the conductive substrate preferably contains two or more metals, and examples of such combinations of two or more metals include copper (Cu)-silver (Ag), copper (Cu)-tin (Sn), copper (Cu)-iron (Fe), copper (Cu)-tungsten (W), copper (Cu)-molybdenum (Mo), copper (Cu)-titanium (Ti), molybdenum (Mo)-lanthanum (La), molybdenum (Mo)-yttrium (Y), molybdenum (Mo)-rhenium (Re), molybdenum (Mo)-tungsten (W), molybdenum (Mo)-niobium (Nb), and molybdenum (Mo)-tantalum (Ta). In the present invention, the conductive substrate preferably contains molybdenum as a main component, and more preferably contains molybdenum and copper.Here, "main component" means that, for example, when the conductive substrate contains Mo as the main component, Mo preferably accounts for 50% or more, more preferably 70% or more, and even more preferably 90% or more of the total components of the conductive substrate, in atomic ratio, and may be 100%. By using such a preferred conductive substrate material, the preferred conductive adhesive layer, and the preferred semiconductor layer in combination, the semiconductor properties of the preferred semiconductor layer can be better exhibited in the semiconductor element. In addition, in the present invention, it is preferable that the conductive substrate contains nickel on at least a portion of the substrate surface, and it is also preferable that the conductive substrate contains gold on at least a portion of the surface.

[0042] In the present invention, the semiconductor device can be obtained by stacking, directly or via another layer, the oxide semiconductor film containing an oxide having a corundum structure as a main component on the conductive substrate having a larger area than the oxide semiconductor film. Here, when fabricating the semiconductor device, the conductive substrate, on whose surface the oxide semiconductor film is attached at regular intervals, directly or via another layer, is typically cut into predetermined areas (the shape is not particularly limited, but preferably polygonal, more preferably rectangular, and most preferably rectangular) corresponding to the intervals. However, burrs may occur on the cut surface of the conductive substrate, making it difficult to fabricate industrially usable semiconductor devices. Therefore, it is preferable to fabricate the semiconductor device by forming a stepped cut surface of the conductive substrate or by cutting from the conductive substrate side rather than the oxide semiconductor film side to prevent burrs from adversely affecting the semiconductor characteristics. The "other layer" is not particularly limited and may include various films such as crystalline films, amorphous films, and metal films. It may be a conductive film or an insulating film. It may also have a single-layer structure or a multi-layer structure consisting of one or more of the above films. In the present invention, it is preferable to bond the semiconductor layer and the conductive substrate having a larger surface area than the semiconductor layer via one or more other layers such as an adhesive layer (for example, an adhesive layer made of a conductive adhesive or a metal), and to sinter the adhesive layer at this time to form the porous layer.

[0043] Furthermore, in the present invention, the oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on the electrode directly or via another layer, and the resulting stacked structure is stacked on the conductive substrate having an area larger than that of the oxide semiconductor film directly or via another layer, and then the side surfaces of the oxide semiconductor film are etched, thereby making it possible to obtain the semiconductor element. [Example]

[0044] Preferred embodiments of the present invention will be described in more detail below with reference to the drawings, but the present invention is not limited to these embodiments.

[0045] FIG. 1 shows the main components of a Schottky barrier diode (SBD) as a semiconductor device according to a preferred embodiment of the present invention. The semiconductor device includes at least a semiconductor layer 101 and a porous layer 108 having a porosity of 10% or less, which is disposed on a first surface side of the semiconductor layer 101 or a second surface side opposite the first surface side. The SBD in FIG. 1 further includes an ohmic electrode 102, a Schottky electrode 103, and a dielectric film 104. The ohmic electrode 102 includes metal layers 102a, 102b, and 102c. The semiconductor layer 101 includes a first semiconductor layer 101a and a second semiconductor layer 101b. The Schottky electrode 103 includes metal layers 103a, 103b, and 103c. The first semiconductor layer 101a is, for example, an n-type semiconductor layer, and the second semiconductor layer 101b is, for example, an n+-type semiconductor layer 101b. Furthermore, the dielectric film 104 (hereinafter, sometimes referred to as "insulator film") covers the side surfaces of the semiconductor layer 101 (the side surfaces of the first semiconductor layer 101a and the second semiconductor layer 101b) and has an opening located on the upper surface of the semiconductor layer 101 (first semiconductor layer 101a), and the opening is provided between a part of the first semiconductor layer 101a and the metal layer 103c of the Schottky electrode 103. The dielectric film 104 may be extended to cover the side surfaces of the semiconductor layer 101 and a part of the upper surface of the semiconductor layer 101 (first semiconductor layer 101a). In the semiconductor element of FIG. 1, the dielectric film 104 improves crystal defects at the edge, better forms a depletion layer, further improves electric field relaxation, and can better suppress leakage current. In this embodiment, the porous layer 108 is disposed on the ohmic electrode 102 (metal layer 102c), and the semiconductor element further includes a conductive substrate (hereinafter also simply referred to as "substrate") 109 disposed on the porous layer 108. In this embodiment, the substrate 109 has a larger area than the semiconductor layer 101. Also, in this embodiment, the ohmic electrode 102 has a larger area than the semiconductor layer 101. Here, "having a larger area" means that the area of ​​the substrate 109 or the ohmic electrode 102 is larger than the area of ​​the semiconductor layer 101 when the semiconductor element is viewed in a plan view in the vertical direction (stacking direction) in FIG. 1.

[0046] The constituent materials of each metal layer of the ohmic electrode 102 and the Schottky electrode 103 are not particularly limited as long as they are conductive and can be used as an ohmic electrode and a Schottky electrode, respectively, and may be known metals as long as they do not impede the object of the present invention. Suitable examples of the metal include at least one metal selected from Groups 4 to 11 of the periodic table. Examples of metals in Group 4 of the periodic table include titanium (Ti), zirconium (Zr), and hafnium (Hf). Examples of metals in Group 5 of the periodic table include vanadium (V), niobium (Nb), and tantalum (Ta). Examples of metals in Group 6 of the periodic table include chromium (Cr), molybdenum (Mo), and tungsten (W). Examples of metals in Group 7 of the periodic table include manganese (Mn), technetium (Tc), and rhenium (Re). Examples of metals in Group 8 of the periodic table include iron (Fe), ruthenium (Ru), and osmium (Os). Examples of metals in Group 9 of the periodic table include cobalt (Co), rhodium (Rh), and iridium (Ir). Examples of metals in Group 10 of the periodic table include nickel (Ni), palladium (Pd), and platinum (Pt). Examples of metals in Group 11 of the periodic table include copper (Cu), silver (Ag), and gold (Au). The thickness of each metal layer is not particularly limited, but is preferably 0.1 nm to 10 μm, more preferably 5 nm to 500 nm, and most preferably 10 nm to 200 nm.

[0047] The means for forming each metal layer of the ohmic electrode 102 and the Schottky electrode 103 is not particularly limited and may be a known means. Specific examples of the forming means include a dry method and a wet method. Examples of dry methods include sputtering, vacuum deposition, and CVD. Examples of wet methods include screen printing and die coating.

[0048] Regarding the heat dissipation of the semiconductor element shown in FIG. 1 and a semiconductor element in which the substrate 109 has the same area as the semiconductor layer 101, a simulation of the heat distribution was performed when each element was used in a semiconductor device. The evaluation results are shown in FIG. 15. As is clear from FIG. 15, the semiconductor element of the present invention has excellent heat dissipation properties and is useful for semiconductor devices that require heat dissipation. Furthermore, regarding the heat dissipation of the semiconductor element shown in FIG. 1 and a semiconductor element in which the ohmic electrode 102 has the same area as the semiconductor layer 101, a simulation of the heat distribution was performed when each element was used in a semiconductor device, and similar evaluation results were obtained.

[0049] In the present invention, the semiconductor layer 101 preferably includes at least a first side, a second side, a first crystal axis, and a second crystal axis, the linear thermal expansion coefficient in the first crystal axis direction being smaller than the linear thermal expansion coefficient in the second crystal axis direction, the first side direction being parallel or substantially parallel to the first crystal axis direction, the second side direction being parallel or substantially parallel to the second crystal axis direction, the substrate 109 preferably includes at least a side corresponding to the first side and a side corresponding to the second side, the side corresponding to the first side being longer than the side corresponding to the second side, because this further improves the heat dissipation of the semiconductor element.Similarly, the ohmic electrode 102 preferably includes at least a side corresponding to the first side and a side corresponding to the second side, the side corresponding to the first side being longer than the side corresponding to the second side, because this further improves the heat dissipation of the semiconductor element. Simulations of heat distribution were performed when such a preferred semiconductor element was used in a semiconductor device, and when a semiconductor element in which the substrate 109 has the same area as the semiconductor layer 101 was used in a semiconductor device. The evaluation results are shown in FIG. 16. As is clear from FIG. 16, the preferred semiconductor element of the present invention described above has excellent heat dissipation properties and is even more useful in semiconductor devices that require heat dissipation. Similarly, when simulations of heat distribution were performed when such a preferred semiconductor element was used in a semiconductor device, and when a semiconductor element in which the ohmic electrode 102 has the same area as the semiconductor layer 101 was used in a semiconductor device, similar evaluation results were obtained.

[0050] FIG. 6 shows the main components of a Schottky barrier diode (SBD) as a semiconductor device according to a preferred embodiment of the present invention. The SBD in FIG. 6 differs from the SBD in FIG. 1 in that it has a tapered region on the side of Schottky electrode 103. In the semiconductor device in FIG. 6, the outer ends of metal layer 103b and / or metal layer 103c (the first metal layer) are located outside the outer end of metal layer 103a (the second metal layer), thereby effectively suppressing leakage current. Furthermore, the portions of metal layer 103b and / or metal layer 103c that extend outward beyond the outer end of metal layer 103a have a tapered region in which the film thickness decreases toward the outside of the semiconductor device, resulting in a configuration with superior voltage resistance. In this embodiment, substrate 109 has a larger area than semiconductor layer 101. In this embodiment, ohmic electrode 102 has a larger area than semiconductor layer 101. Here, "having a large area" means that the area of ​​the substrate 109 is larger than the area of ​​the semiconductor layer 101 when the semiconductor element is viewed in a plan view from the vertical direction (stacking direction) in FIG.

[0051] Examples of materials for the metal layer 103a include the metals listed above as examples of the materials for each metal layer. Examples of materials for the metal layers 103b and 103c include the metals listed above as examples of the materials for each metal layer. The means for forming each layer in FIG. 1 is not particularly limited and may be any known means as long as it does not impede the objectives of the present invention. Examples include forming a film by vacuum deposition, CVD, sputtering, or various coating techniques, followed by patterning by photolithography, or directly patterning using printing technology.

[0052] The following describes preferred manufacturing steps for the SBD shown in FIG. 1, but the present invention is not limited to these preferred manufacturing methods. FIG. 2(a) shows a stacked structure in which a first semiconductor layer 101a and a second semiconductor layer 101b are stacked on a crystal growth substrate (sapphire substrate) as a base 110 via a stress relaxation layer using the mist CVD method described above. Metal layers 102a, 102b, and 102c are formed as ohmic electrodes on the second semiconductor layer 101b using the dry method or the wet method described above, yielding the stacked structure shown in FIG. 2(b). Furthermore, a substrate 109 is stacked on the stacked structure shown in FIG. 2(b) via a porous layer 108 made of a noble metal, yielding stacked structure (c). Then, as shown in FIG. 3, the base 110 and stress relaxation layer 111 of stacked structure (c) are peeled off using a known peeling method, yielding stacked structure (d). As shown in FIG. 4, the side surfaces of the semiconductor layer of the laminate (d) are tapered by etching to obtain a laminate (e), and then an insulating film 104 is laminated on the tapered side surfaces and the upper surface of the semiconductor layer excluding the openings to obtain a laminate (f). Next, as shown in FIG. 5, metal layers 103a, 103b, and 103c are formed as Schottky electrodes in the upper openings of the semiconductor layer of the laminate (f) using the dry method or the wet method to obtain a laminate (g). The semiconductor device obtained in this manner has excellent semiconductor properties and heat dissipation because the ohmic electrode 102 and the substrate 109 have larger areas than the semiconductor layers 101a and 101b. Furthermore, the semiconductor device obtained in this manner can effectively suppress the diffusion of oxygen and other elements in the semiconductor layer, exhibiting excellent ohmic properties, improving crystal defects at the edges, better forming a depletion layer, further improving electric field relaxation, and better suppressing leakage current. When an SBD was fabricated using the preferred embodiment, it was confirmed using a microscope that it had no cracks or irregularities, excellent flatness, and no distortion. The prototype was then subjected to a power cycle test, completing 3,000 cycles in 5 minutes. The results were favorable, demonstrating sufficient heat dissipation and thermal resistance. As shown in Figure 7(b), this example uses a porous layer with a porosity of 10% or less.

[0053] FIG. 17 shows an example of a lateral semiconductor device. The MOSFET in FIG. 17 is a lateral MOSFET and includes an n+-type semiconductor layer (n+-type source layer) 1b, an n+-type semiconductor layer (n+-type drain layer) 1c, a high-resistance oxide film 2 as a p-type semiconductor layer, a gate insulating film 4a, a gate electrode 5a, a source electrode 5b, a drain electrode 5c, an insulating substrate 9, a porous layer 108, and a substrate 109. In this embodiment, the substrate 109 has a larger area than the n+-type semiconductor layer (n+-type source layer) 1b and the n+-type semiconductor layer (n+-type drain layer) 1c. In the semiconductor device in FIG. 17, the insulating substrate 9 is bonded to the substrate 109 via the porous layer 108. However, in the present invention, the insulating substrate 9 may be bonded directly to the substrate 109 or by other known means. The means for forming each layer in FIG. 17 is not particularly limited and may be any known means as long as it does not impede the objectives of the present invention. For example, a method of forming a film by vacuum deposition, CVD, sputtering, or various coating techniques, followed by patterning by photolithography, or a method of directly patterning by printing technology, etc., can be mentioned.

[0054] The semiconductor element may be a horizontal device or a vertical device, but in the present invention, a vertical device is preferred and is particularly useful as a power device. Examples of the semiconductor element include diodes (e.g., PN diodes, Schottky barrier diodes, junction barrier Schottky diodes, etc.) and transistors (e.g., MOSFETs, MESFETs, etc.), with Schottky barrier diodes (SBDs), metal oxide semiconductor field effect transistors (MOSFETs), and insulated gate bipolar transistors (IGBTs) being preferred, and Schottky barrier diodes (SBDs) being more preferred.

[0055] In addition to the above, the semiconductor element of the present invention is preferably bonded to a lead frame, circuit board, or heat dissipation substrate using a bonding member according to conventional methods and used as a semiconductor device. It is particularly suitable for use as a power module, inverter, or converter, and further suitable for use in semiconductor systems using power supplies, etc. A preferred example of the semiconductor device is shown in FIG. 11. In the semiconductor device of FIG. 11, both sides of a semiconductor element 500 are bonded to a lead frame, circuit board, or heat dissipation substrate 502 by solder 501. This configuration allows for a semiconductor device with excellent heat dissipation properties. In the present invention, it is preferable that the periphery of the bonding member, such as solder, is sealed with resin. In the present invention, it is preferable that the side surface of the conductive substrate is a cut surface and that the cut surface has a step or burr, since this allows the semiconductor device to be fabricated without adversely affecting the semiconductor characteristics of the semiconductor element. An example of a semiconductor element in which the conductive substrate is a cut surface and the cut surface has a step is shown in FIG. 13. 14 shows an example of a semiconductor element in which the conductive substrate is a cut surface and the cut surface has burrs 112. Here, "burrs" refers to residues, fluff, etc. that extend from the edge of the cut surface due to the cutting process. The step may be one or more steps, and the shape of the step is not particularly limited as long as it does not impede the object of the present invention.

[0056] The power supply device can be fabricated from or as the semiconductor device by connecting it to a wiring pattern or the like using a known method. FIG. 8 shows a power supply system 170 configured using multiple power supply devices 171 and 172 and a control circuit 173. As shown in FIG. 9, the power supply system can be used in a system device 180 by combining an electronic circuit 181 and a power supply system 182. An example of a power supply circuit diagram for a power supply device is shown in FIG. 10. FIG. 10 shows the power supply circuit of the power supply device, which is composed of a power circuit and a control circuit. DC voltage is switched at high frequency by an inverter 192 (comprising MOSFETs A to D) to convert it to AC, then insulated and transformed by a transformer 193, rectified by a rectifier MOSFET 194, and smoothed by a DCL 195 (smoothing coils L1 and L2) and a capacitor to output a DC voltage. At this time, a voltage comparator 197 compares the output voltage with a reference voltage, and a PWM control circuit 196 controls the inverter 192 and the rectifier MOSFET 194 to obtain the desired output voltage.

[0057] In the present invention, the semiconductor device is preferably a power card, including a cooler and an insulating member. More preferably, the cooler is provided on both sides of the semiconductor layer, with at least the insulating member interposed therebetween. Most preferably, a heat dissipation layer is provided on each side of the semiconductor layer, with the cooler provided on the outside of the heat dissipation layer, with at least the insulating member interposed therebetween. FIG. 12 shows a power card according to a preferred embodiment of the present invention. The power card shown in FIG. 12 is a double-sided cooled power card 201, and includes a refrigerant tube 202, a spacer 203, an insulating plate (insulating spacer) 208, a sealing resin portion 209, a semiconductor chip 301a, a metal heat transfer plate (protruding terminal portion) 302b, a heat sink and electrode 303, a metal heat transfer plate (protruding terminal portion) 303b, a solder layer 304, a control electrode terminal 305, and a bonding wire 308. The thickness-direction cross section of the refrigerant tube 202 has a number of flow paths 222 separated by a number of partition walls 221 extending in the flow path direction at predetermined intervals. Such a suitable power card can achieve higher heat dissipation and satisfy higher reliability.

[0058] Semiconductor chip 301a is bonded to the inner main surface of metal heat transfer plate 302b with solder layer 304, and metal heat transfer plate (protruding terminal portion) 302b is bonded to the remaining main surface of semiconductor chip 301a with solder layer 304, thereby connecting the collector electrode surface and emitter electrode surface of the IGBT with the anode electrode surface and cathode electrode surface of the flywheel diode in a so-called anti-parallel configuration. Metal heat transfer plates (protruding terminal portions) 302b and 303b can be made of, for example, Mo or W. Metal heat transfer plates (protruding terminal portions) 302b and 303b have a thickness difference that compensates for the thickness difference of semiconductor chip 301a, and as a result, the outer surfaces of metal heat transfer plates 302b and 303b are flat.

[0059] Resin sealing portion 209 is made of, for example, epoxy resin and is molded to cover the side surfaces of metal heat transfer plates 302b and 303b, and semiconductor chip 301a is molded in resin sealing portion 209. However, the outer main surfaces, i.e., the contact heat-receiving surfaces, of metal heat transfer plates 302b and 303b are completely exposed. Metal heat transfer plates (protruding terminal portions) 302b and 303b protrude from resin sealing portion 209 to the right in Fig. 12, and control electrode terminal 305, which is a so-called lead frame terminal, connects the gate (control) electrode surface of semiconductor chip 301a, on which, for example, an IGBT is formed, to control electrode terminal 305.

[0060] The insulating spacer, insulating plate 208, is made of, for example, aluminum nitride film, but may be made of other insulating films. Insulating plate 208 completely covers and adheres to metal heat transfer plates 302b and 303b. However, insulating plate 208 and metal heat transfer plates 302b and 303b may simply be in contact with each other, or may be coated with a good heat transfer material such as silicone grease, or may be joined by various methods. Alternatively, an insulating layer may be formed by ceramic spraying, or insulating plate 208 may be joined to the metal heat transfer plate, or may be joined or formed on the refrigerant tube.

[0061] The refrigerant tubes 202 are fabricated by cutting aluminum alloy plates formed by pultrusion or extrusion to the required length. The cross section of the refrigerant tubes 202 in the thickness direction has numerous flow paths 222 separated by numerous partition walls 221 extending in the flow path direction at predetermined intervals. The spacers 203 may be soft metal plates such as solder alloys, or may be films formed by coating on the contact surfaces of the metal heat transfer plates 302b and 303b. The surface of this soft spacer 203 easily deforms to conform to the minute irregularities and warping of the insulating plate 208 and the refrigerant tubes 202, thereby reducing thermal resistance. The surfaces of the spacers 203 may be coated with a known high-thermal-conductivity grease, or the spacers 203 may be omitted. [Industrial Applicability]

[0062] The semiconductor element of the present invention can be used in a wide range of fields, including semiconductors (for example, compound semiconductor electronic devices), electronic components, electrical equipment components, optical and electrophotographic related devices, and industrial materials, but is particularly useful as a power device. [Explanation of symbols]

[0063] 1 n+ type semiconductor layer 1b n+ type semiconductor layer (n+ type source layer) 1c n+ type semiconductor layer (n+ type drain layer) 2. High-resistivity oxide film 3 n-type semiconductor layer 4a Gate insulating film 5a Gate electrode 5b Source electrode 5c Drain electrode 9 Substrate 101 Semiconductor layer 101a First semiconductor layer 101b Second semiconductor layer 102 Ohmic electrode 102a metal layer 102b Metal layer 102c metal layer 103 Schottky electrode 103a Metal layer 103b Metal layer 103c metal layer 104 Insulator film 108 Porous layer 109 PCB 110 Base 111 Stress relief layer 112 Bali 170 Power System 171 Power supply 172 Power supply 173 Control Circuit 180 System Unit 181 Electronic circuit 182 Power System 192 inverter 193 Trans 194 Rectifier MOSFET 195 DCL 196 PWM control circuit 197 Voltage Comparator 201 Double-sided cooled power card 202 Refrigerant tube 203 Spacer 208 Insulating plate (insulating spacer) 209 Sealing resin part 221 Bulkhead 222 Channel 301a Semiconductor chip 302b Metal heat transfer plate (protruding terminal part) 303 Heat sink and electrode 303b Metal heat transfer plate (protruding terminal part) 304 solder layer 305 Control electrode terminal 308 Bonding Wire 500 semiconductor elements 501 Solder 502 Lead frame, circuit board or heat dissipation board

Claims

1. A semiconductor element including a stacked structure in which an oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on a conductive substrate via a porous layer, wherein the conductive substrate has an area larger than that of the oxide semiconductor film.

2. A semiconductor element including a stacked structure in which an oxide semiconductor film containing an oxide having a corundum structure as a main component is stacked on an electrode directly or via another layer, the electrode being an ohmic electrode, the electrode having an area larger than that of the oxide semiconductor film, and a notch being formed in an upper end of a side surface of the electrode.

Images