LED die with surface brightness peaking at the center

Abstract

A light emitting diode die (LED die) can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can feed the p-n junction. The vias can be optionally electrically connected in parallel with each other. A controller can provide current to the vias to power the LED die. The vias can be distributed with a peak density at or near the center of the LED die and a decreasing density away from the peak density, such that when multiple vias are powered, the LED die emits light with a peak surface brightness at or near the center of the LED die and a decreasing surface brightness with increasing distance from the peak surface brightness.

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 63 / 284,982, filed December 1, 2021, the entire contents of which are incorporated herein by reference. [Technical field] FIELD OF THE DISCLOSURE The present disclosure relates to light emitting diode (LED) dies and lighting systems and methods that use such dies. [Background technology]

[0002] The lighting system can use LEDs to provide light to the scene. Summary of the Invention

[0003] Efforts are ongoing to improve lighting systems, such as reducing wasted light and / or reducing optical materials in the components of the lighting system. [Brief explanation of the drawings]

[0004] [Figure 1] FIG. 1 is a diagram illustrating an example side view of an example lighting system according to some embodiments.

[0005] [Figure 2] FIG. 2 is a diagram illustrating an example side view of an example lighting system according to some embodiments.

[0006] [Figure 3] FIG. 3 is a diagram illustrating a front view of the LED die of FIGS. 1 and 2 according to some embodiments.

[0007] [Figure 4] FIG. 4 illustrates a flowchart of an example method for providing illumination, according to some embodiments.

[0008] Corresponding reference characters indicate corresponding parts throughout the several views. Elements in the drawings are not necessarily drawn to scale. The configurations shown in the drawings are examples only and should not be construed as limiting in any way. DETAILED DESCRIPTION OF THE INVENTION

[0009] It has been found that in some optical systems, such as automotive optical systems such as vehicle headlights, light emanating from the corners of a square or rectangular LED die may not significantly contribute to the optical system's figure of merit (Figure of merit is a quantity that is maximized or minimized during the design phase of an optical system, such as root-mean-square spot size, modulation transfer at a specific spatial frequency, detector signal, or Strehl ratio). For example, in the case of a vehicle headlight, light from the corners of the LED die may arrive at a location far from the target position of the vehicle headlight. As a result, utilizing the corners of a square or rectangular LED die can waste optical materials (e.g., the semiconductor material forming the corners of the LED die) and power (e.g., from the current passing through the corners of the LED die and generating light at the corners of the LED die).

[0010] To reduce wasted optical material and power, the LED die can be shaped to reduce or eliminate surface area corresponding to the corners of a square or rectangle. The manufacturing process is suitable for polygonal LED die shapes because the LED die can be fabricated at the wafer level by a singulation or dicing process that can include scribing, scoring, breaking, dicing, laser ablation, and / or other suitable steps that can include straightening. For example, the LED die can be shaped as a pentagon, heptagon, octagon, nonagon, decagon, or another n-sided polygon (n=5 or greater).

[0011] In some examples, it has been found that hexagonal LED dies, such as regular hexagonal LED dies (e.g., hexagonal LED dies where the hexagon is both equilateral and equiangular), can use less optical material than equivalent square or rectangular LED dies and can operate at less power than equivalent square or rectangular LED dies. Furthermore, because regular hexagons can be tiled to efficiently fill a planar area, such as the area of ​​a wafer, forming the LED into a regular hexagon avoids material waste (e.g., material that would not be included in the LED die if the LED die were formed into an n-sided polygon, where n is greater than or equal to 5 and less than or equal to 7).

[0012] In addition to shaping the LED die in a particular manner, the electrical connections of the LED die can be tailored so that the surface brightness forms a peak, such as at or near the center of the LED die, and decreases away from the peak. Compared to an LED die contact, which can extend across the entire or nearly the entire surface area of ​​the LED die to create a generally uniform surface brightness across the surface area of ​​the LED die, the LED die can include a plurality of vias, which can be distributed non-uniformly across the surface area of ​​the LED die. To create a peak surface brightness, such as the center of the LED die, the vias can be distributed to have a higher density at the peak location, such as the center of the LED die, and a lower density at locations away from the peak location.

[0013] This shaping of the LED die and this formation of the die electrical connections can be used for vertical thin film (VTF), buried contact vertical thin film, chip scale package (CSP), thin film flip chip (TFFC), or other suitable die types.

[0014] FIG. 1 is an exemplary side view of a lighting system 100 according to some embodiments.

[0015] The lighting system 100 may include a light emitting diode (LED) die 102. The LED die 102 may include a p-n junction 104 between a p-doped semiconductor material 106 and an n-doped semiconductor material 108. The LED die 102 may include a plurality of p-vias 110 that electrically contact the p-doped semiconductor material 106. The LED die 102 may include a plurality of n-vias 112 that electrically contact the n-doped semiconductor material 108. The p-n junction 104 may be formed on a substrate, such as a sapphire substrate, which is omitted from FIG. 1 for clarity.

[0016] The multiple p-vias 110 and the multiple n-vias 112 can be distributed non-uniformly across the surface area of ​​the LED die 102, and therefore, when the multiple p-vias 110 and the multiple n-vias 112 are powered, the LED die 102 can emit light having a surface brightness that varies non-uniformly across the surface area of ​​the LED die 102.

[0017] In some embodiments, the p vias 110 of the plurality of p vias 110 and the n vias 112 of the plurality of n vias 112 can be distributed across the surface area of ​​the LED die 102 with a density that has a peak at or near the center of the LED die 102 (e.g., within 5% of the diameter of the LED die 102, within 10% of the diameter of the LED die 102, or within 20% of the diameter of the LED die 102) and decreases away from the peak of the LED die 102; thus, when the plurality of p vias 110 and the plurality of n vias 112 are powered, the LED die 102 can emit light that has a peak surface brightness 114 at or near the center of the LED die 102 and that decreases as the distance from the peak of the surface brightness 114 increases.

[0018] In some embodiments, the p-vias 110 of the plurality of p-vias 110 and the n-vias 112 of the plurality of n-vias 112 may be distributed over the surface area of ​​the LED die 102 in an equilateral triangular pattern.

[0019] In some embodiments, the p vias 110 of the plurality of p vias 110 can be distributed over the surface area of ​​the LED die 102 such that the separation between adjacent p vias 110 varies across the LED die 102 by a value of 15% or more of the minimum p via separation value, 10% or more of the minimum p via separation value, or 20% or more of the minimum p via separation value. Simulations of the LED die 102 have shown that a value of 15% (or about 15%, such as 10% or 20%) can provide a reasonable compromise between reducing the surface area of ​​the LED die 102 (and thus reducing material and power) and maintaining an appropriately high figure of merit in an optical system using the LED die 102.

[0020] In some embodiments, the n vias 112 of the plurality of n vias 112 can be distributed across the surface area of ​​the LED die 102 such that the separation between adjacent n vias 112 varies across the LED die 102 by a value of 15% or more of the minimum n via separation value, 10% or more of the minimum n via separation value, or 20% or more of the minimum n via separation value.

[0021] In some embodiments, the perimeter of the LED die 102 can be devoid of electrical connections such as p-vias 110 and -vias 112. For example, an area around the perimeter within 1%, 5%, or 10% of the diameter of the LED die 102.

[0022] In some embodiments, the p vias 110 of the plurality of p vias 110 can be electrically connected in parallel to one another. The LED die 102 can include a central p contact pad 116 positioned proximate to the center of the LED die 102 (e.g., spaced less than 1%, less than 5%, or less than 10% of the diameter of the LED die 102 from the center) and capable of supplying current to the p vias 110 of the plurality of p vias 110. In some embodiments, the central p contact pad 116 can direct heat away from the LED die 102.

[0023] In some embodiments, the n-vias 112 of the plurality of n-vias 112 may be electrically connected in parallel to one another. The LED die 102 may include a central n-contact pad 118 located proximate a center of the LED die 102 and capable of supplying current to the n-vias 112 of the plurality of n-vias 112. In some embodiments, the central n-contact pad 118 may direct heat away from the LED die 102.

[0024] 1 , the LED die 102 can use p-vias 110 to supply current to the p-doped semiconductor material 106. Alternatively, the LED die 102 can use one or more contact pads that are larger than vias to supply current to a larger area of ​​the p-doped semiconductor material than can be accessed by each p-via. In some embodiments, the LED die 102 can use large electrical contacts that extend across the entire surface area or nearly the entire surface area of ​​the LED die 102 to supply current throughout the p-doped semiconductor material 106.

[0025] 1 , the LED die 102 can use n-vias to supply current to the n-doped semiconductor material 108. Alternatively, the LED die 102 can use one or more contact pads that are larger than the vias to supply current to a larger area of ​​the n-doped semiconductor material 108 than can be accessed by each n-via. In some implementations, the LED die 102 can use large electrical contacts that extend across the entire surface area or nearly the entire surface area of ​​the LED die 102 to supply current throughout the n-doped semiconductor material 108.

[0026] 2 is an exemplary side view of a lighting system 200 according to some embodiments. Compared to the lighting system 100 of FIG. 1, the lighting system 200 replaces the p-vias 110 with a conductive layer 110A that electrically contacts the p-doped semiconductor material 106. The conductive layer 110A may extend at least partially over a surface area of ​​the LED die 102 such that, when power is supplied to the plurality of p-vias 110, current flows through the p-n junctions 104 between the conductive layer 110A and the plurality of n-vias 112.

[0027] As a further alternative, the positions of the p-doped semiconductor material 106 and the n-doped semiconductor material 108 can be swapped such that the conductive layer 110A is in electrical contact with the n-doped semiconductor material 108 and the via is a p-via that is in electrical contact with the p-doped semiconductor material 106, with light exiting the LED die 102 from the p-doped semiconductor material 106.

[0028] FIG. 3 is a front view of the LED die of FIGS. 1 and 2 according to some embodiments.

[0029] In some embodiments, the surface area of ​​the LED die 102 can be hexagonal, such as a regular hexagon, an equilateral hexagon, an equiangular hexagon, etc. Alternatively, other shapes can be used, including an n-sided polygon, where n is an integer greater than or equal to 5.

[0030] In some embodiments, the high brightness area 302 of the LED die can be defined as the area of ​​the LED die 102 where the surface brightness 114 is greater than or equal to 80% of the peak surface brightness 114. Other thresholds, such as 50%, 60%, 70%, 75%, 85%, 90%, 95%, 98%, or 99%, can also be used. The high brightness area 302 can be less than half of the surface area of ​​the LED die 102.

[0031] The high-brightness area 302 has a perimeter 304. The radial separation between the perimeter 304 and the edge of the LED die 102, extending along a line passing through the peak of the surface brightness 114, can vary by less than a threshold percentage, such as 20% of the average radial separation value around the perimeter 304 of the high-brightness area 302. Other threshold values, such as 40%, 30%, 25%, 15%, 10%, 5%, 2%, or 1%, can also be used. In the example of FIG. 3 , the radial separation is shown as having values ​​D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11, and D12. The values ​​of D1 through D12 can vary by less than a threshold percentage, such as 20% of an average value or a mean value of the values ​​D1 through D12. This is by way of example, and other suitable configurations can be used.

[0032] Illumination system 100 may optionally further include a controller 120 that can pass current across pn junction 104 to generate light having a surface brightness 114 that varies non-uniformly across the surface area of ​​LED die 102. Illumination system 100 may optionally further include a lens 122 that can collimate the light to direct a specified light distribution 124 toward a target. In some embodiments, LED die 102 and lens may be configured as a vehicle headlight, a spotlight, a flashlight, or other suitable application where a direction beam may be used.

[0033] 4 shows a flowchart of an example method 400 for providing illumination, according to some embodiments. Method 400 can be performed by lighting system 100, lighting system 200, or another suitable system. Method 400 for providing illumination is one method for providing illumination, and other suitable methods can also be used.

[0034] In operation 402, a light emitting diode (LED) die is provided. The LED die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include a plurality of p-vias that electrically contact the p-doped semiconductor material 106. The LED die can include a plurality of n-vias that electrically contact the n-doped semiconductor material. The plurality of p-vias and the plurality of n-vias can be distributed non-uniformly across a surface area of ​​the LED die.

[0035] In operation 404, the plurality of p-vias and the plurality of n-vias can be energized to cause the LED die to emit light having a surface brightness that varies non-uniformly across the surface area of ​​the LED die.

[0036] In some embodiments, the p vias of the plurality of p vias and the n vias of the plurality of n vias can be distributed across the surface area of ​​the LED die with a density that peaks at or near the center of the LED die and decreases away from the peak density, such that when the plurality of p vias and the plurality of n vias are powered, the LED die emits light that has a peak surface brightness at or near the center of the LED die and decreases away from the peak surface brightness. In some embodiments, the high brightness area of ​​the LED die can be defined as an area of ​​the LED die that has a surface brightness that is 80% or greater than the peak surface brightness. The high brightness area can be less than half of the surface area of ​​the LED die. The high brightness area can have a periphery. The radial separation between the periphery and edge of the LED die, extending along a line passing through the peak surface brightness, can vary by less than 20% of the average value of the radial separation around the periphery of the high brightness area. In some embodiments, the surface area of ​​the LED die is a regular hexagon.

[0037] A method for manufacturing such LED dies capable of emitting light with non-uniform surface brightness is described. The dies and substrate can be singulated or diced to create dies of predetermined polygonal shapes, such as hexagons. Die singulation methods include scribe and break, stealth dice (e.g., dicing using a laser rather than a blade) and break, blade dicing, and laser ablation. Some dicing methods can use parallel cuts across the wafer. For regular hexagonal dies, scribe and break can use three different scribe axes oriented 120 degrees from each other. For polygonal dies, additional techniques can be used to prevent scribing through other dies on the wafer.

[0038] As an example of a manufacturing technique, semiconductor active regions (mesas) can be defined by dry etching (ICP, RIE) of the epitaxial material through the desired shape of the active region (mesa etching). This dry etching allows the active region to be shaped into a specific spatial distribution, such as a hexagon, octagon, or other n-gon shape. A second etch defines the boundaries of the epitaxial material that can conform to the mesa boundaries (trench etching). For VTF and TFFC dies, where the substrate has been removed, this technique can be used to define dies of arbitrary shapes. For CSP dies, where the substrate remains on the device, excess substrate can be removed by laser cutting or other techniques at the die or wafer level. This technique allows VTF and TFFC dies to be arranged in a triangular lattice, making the most efficient use of the entire wafer area. CSP dies can also be arranged in a triangular lattice configuration and then singulated by laser ablation of the substrate. Laser ablation allows for higher laser power and wider street widths between dies than stealth scribe and break techniques.

[0039] Alternatively, in another example of a singulation technique, the scribe / break can skip parallel scribe / break lines to avoid scribing / breaking on top of other dies. This approach uses three scribe axes offset 120 degrees apart to form a central hexagon, but skips every third scribe / break line. Skipping every third scribe / break line produces a hexagonal die and the boundaries of two additional die shapes (a triangle and a diamond), which can be discarded as waste or used in other applications to utilize the entire wafer.

[0040] Another approach is to etch the GaN down to the sapphire substrate and then stealth-dic the sapphire. To prevent cracks in the sapphire from extending through other dies, stealth-dicing is done at the corners or points of the polygons, followed by stealth-dicing at the straight edges of the polygons. This technique prevents cracks from propagating beyond the points of the polygons. In particular, the hexagons can be shaped into a honeycomb structure to reduce and minimize epitaxial material waste.

[0041] To further illustrate the systems and related methods disclosed herein, a non-limiting list of examples is provided below. Each of the following non-limiting examples can stand on its own or can be combined with any one or more of the other examples in any permutation or combination.

[0042] In Example 1, the lighting system comprises: a light emitting diode die (LED die) including a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material; The LED die includes a plurality of vias configured to feed the pn junction, the plurality of vias being distributed at a peak density at or near the center of the LED die and decreasing density as the distance from the peak density increases, such that when the plurality of vias are fed, the LED die emits light that has a peak surface brightness at or near the center of the LED die and decreases surface brightness as the distance from the peak surface brightness increases.

[0043] In Example 2, the lighting system of Example 1 can optionally be configured as follows: the vias of the plurality of vias are electrically connected in parallel with each other.

[0044] In Example 3, the lighting system of either Example 1 or 2 can optionally be configured as follows: the vias of the plurality of vias are distributed over the surface area of ​​the LED die in an equilateral triangular pattern.

[0045] In Example 4, the lighting system of any of Examples 1 to 3 can optionally be configured as follows: the vias of the plurality of vias are distributed across the surface area of ​​the LED die such that the separation between adjacent vias varies across the LED die by a value that is 15% or more of the smallest via separation value.

[0046] In Example 5, the lighting system of any of Examples 1 to 4 can optionally be configured as follows: the LED die includes a central contact pad located proximate to a center of the LED die, the central contact pad configured to supply current to a via of the plurality of vias and to direct heat away from the LED die.

[0047] In Example 6, the lighting system of any of Examples 1 to 13 optionally further includes: a conductive layer extending at least partially across a surface area of ​​the LED die, the conductive layer being arranged such that when the plurality of vias are powered, current flows through pn junctions between the conductive layer and the plurality of vias.

[0048] In Example 7, the lighting system of any of Examples 1 to 6 may optionally be configured as follows: the plurality of vias is a first plurality of vias that electrically contacts the n-doped semiconductor material, and the lighting system further includes a second plurality of vias that electrically contacts the p-doped semiconductor material, such that when the plurality of vias is powered, current flows through p-n junctions between the first plurality of vias and the second plurality of vias.

[0049] In Example 8, the lighting system of any of Examples 1 to 7 can optionally be configured as follows: a via of the plurality of vias is an n-via that electrically contacts an n-doped semiconductor material.

[0050] In Example 9, the lighting system of any of Examples 1-8 can optionally be configured as follows: there are no vias at the periphery of the LED die.

[0051] In Example 10, the lighting system of any of Examples 1 to 9 can optionally be configured as follows: the high brightness area of ​​the LED die is defined as an area of ​​the LED die where the surface brightness is 80% or more of the peak surface brightness, and the high brightness area is less than or equal to half of the surface area of ​​the LED die.

[0052] In Example 11, the illumination system of any of Examples 1 to 10 can optionally be configured as follows: the high brightness area of ​​the LED die is defined as an area of ​​the LED die having a surface brightness that is 80% or more of the peak surface brightness; the high brightness area has a periphery; and the radial separation between the periphery and the edge of the LED die, extending along a line passing through the peak surface brightness, varies by less than 20% of the average value of the radial separation around the periphery of the high brightness area.

[0053] In Example 12, the lighting system of any of Examples 1 to 11 can optionally be configured as follows: the surface area of ​​the LED die is a regular hexagon.

[0054] In Example 13, the lighting system of any of Examples 1 to 13 may optionally further comprise: a controller configured to pass current across the pn junction through a plurality of vias to generate light having a surface brightness that varies non-uniformly across the surface area of ​​the LED die, and a lens configured to collimate the light.

[0055] In Example 14, the lighting system of any of Examples 1 to 13 can optionally be configured as follows: the LED die and lens are configured as a vehicle headlight, a spotlight, or a flashlight.

[0056] In Example 15, the lighting system comprises: a light emitting diode die (LED die) configured to emit light having a surface brightness that varies across a surface area of ​​the LED die, the surface brightness having a peak surface brightness at or near a center of the LED die and decreasing with increasing distance from the peak surface brightness; a high brightness area of ​​the LED die, defined as an area of ​​the LED die having a surface brightness of 80% or more of a peak surface brightness, the high brightness area of ​​the LED die being less than half of the surface area of ​​the LED die, and the high brightness area having a periphery; and a radial separation between the periphery and the edge of the LED die extending along a line passing through the peak surface brightness, the radial separation varying by less than 20% of the average value of the radial separation around the periphery of the high brightness area.

[0057] In Example 16, the lighting system of Example 15 can optionally be configured as follows: the surface area of ​​the LED die is shaped as a regular hexagon.

[0058] In Example 17, the lighting system of any of Examples 15 to 16 may optionally be configured as follows: the LED die comprises a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material; the LED die includes a plurality of vias configured to feed power to the p-n junction; and the plurality of vias are distributed across a surface area of ​​the LED die with a peak density at or near the center of the LED die and a decreasing density as the distance from the peak density increases.

[0059] In Example 18, the lighting system comprises: a light emitting diode die (LED die) including a p-n junction between p-doped and n-doped semiconductor materials, the LED die including a plurality of vias electrically connected in parallel to one another and configured to supply power to the p-n junction, the plurality of vias being non-uniformly distributed across a surface area of ​​the LED die with a peak density at or near a center of the LED die and decreasing density with increasing distance from the peak density, such that when the plurality of vias are powered, the LED die emits light having a peak surface brightness at or near the center of the LED die and decreasing surface brightness with increasing distance from the peak surface brightness; a high brightness area of ​​the LED die, defined as an area of ​​the LED die having a surface brightness of 80% or more of a peak surface brightness, the high brightness area being less than half of the surface area of ​​the LED die, and the high brightness area having a periphery; and a radial separation between the periphery and the edge of the LED die extending along a line passing through the peak surface brightness, the radial separation varying by less than 20% of the average value of the radial separation around the periphery of the high brightness area.

[0060] In Example 19, the lighting system of Example 18 can optionally be configured as follows: the surface area of ​​the LED die is a regular hexagon.

[0061] In Example 20, the lighting system of any of Examples 18 to 19 may optionally further comprise: a conductive layer extending at least partially across a surface area of ​​the LED die, the conductive layer being arranged such that when the plurality of vias are energized, current flows through pn junctions between the conductive layer and the plurality of vias.

[0062] While only certain features of the systems and methods have been illustrated and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes. The actions of the methods may be performed substantially simultaneously or in different orders.

Claims

1. 1. A lighting system comprising: a light emitting diode die (LED die) including a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material; the LED die includes a plurality of vias configured to feed a pn junction; the vias are distributed at a peak density at or near a center of the LED die and a decreasing density with increasing distance from the peak density, such that when the vias are powered, the LED die emits light having a peak surface brightness at or near the center of the LED die and a decreasing surface brightness with increasing distance from the peak surface brightness; the LED die includes a central contact pad located proximate to a center of the LED die; the central contact pad is configured to supply current to a via of the plurality of vias and to direct heat away from the LED die. Lighting system.

2. the vias among the plurality of vias are electrically connected to each other in parallel; 10. The lighting system of claim 1.

3. the vias of the plurality of vias are distributed across a surface area of ​​the LED die in an equilateral triangular pattern; 10. The lighting system of claim 1.

4. the vias of the plurality of vias are distributed across a surface area of ​​the LED die such that a separation between adjacent vias varies across the LED die by a value greater than or equal to 15% of a minimum via separation value; 10. The lighting system of claim 1.

5. and further comprising a conductive layer extending at least partially across a surface area of ​​the LED die, the conductive layer being arranged such that, when the plurality of vias are energized, current flows through pn junctions between the conductive layer and the plurality of vias.

10. The lighting system of claim 1.

6. the plurality of vias is a first plurality of vias that electrically contact the n-doped semiconductor material; The lighting system comprises: a second plurality of vias electrically contacting the p-doped semiconductor material such that when the plurality of vias is powered, current flows through p-n junctions between the first and second plurality of vias; 10. The lighting system of claim 1.

7. a via in the plurality of vias is an n-via that electrically contacts the n-doped semiconductor material; 10. The lighting system of claim 1.

8. There are no vias at the periphery of the LED die; 10. The lighting system of claim 1.

9. the high brightness area of ​​the LED die is defined as the area of ​​the LED die having a surface brightness of 80% or more of the peak surface brightness; the high brightness area is less than half of the surface area of ​​the LED die; 10. The lighting system of claim 1.

10. a high brightness area of ​​the LED die is defined as an area of ​​the LED die having a surface brightness of 80% or greater of a peak surface brightness; the high intensity area has a periphery; a radial separation between the periphery and the edge of the LED die, extending along a line passing through the peak surface brightness, varies by less than 20% of an average value of the radial separation at the periphery of the high brightness area; 10. The lighting system of claim 1.

11. the surface area of ​​the LED die is a regular hexagon; 10. The lighting system of claim 1.

12. a controller configured to pass current through the plurality of vias and across the pn junction to generate light having a surface brightness that varies non-uniformly across a surface area of ​​the LED die; a lens configured to collimate the light.

10. The lighting system of claim 1.

13. The LED die and the lens are configured as a vehicle headlight, a spotlight, or a flashlight.

13. The lighting system of claim 12.

14. 1. A lighting system comprising: a light emitting diode die (LED die) configured to emit light having a surface brightness that varies across a surface area of ​​the LED die, the surface brightness having a peak surface brightness at or near a center of the LED die and decreasing with increasing distance from the peak surface brightness; a high brightness area of ​​the LED die, defined as an area of ​​the LED die where the surface brightness is 80% or more of the peak surface brightness, the high brightness area being less than half of the surface area of ​​the LED die, and the high brightness area having a periphery; a radial separation between the periphery and an edge of the LED die extending along a line passing through the peak surface brightness, the radial separation varying by less than 20% of an average value of the radial separation around the periphery of the high brightness area; Equipped with the LED die includes a central contact pad located proximate to a center of the LED die; the central contact pad is configured to supply current to one of a plurality of vias in the LED die and to direct heat away from the LED die. Lighting system.

15. the surface area of ​​the LED die is shaped as a regular hexagon; 15. The lighting system of claim 14.

16. the LED die comprises a pn junction between a p-doped semiconductor material and an n-doped semiconductor material; the LED die includes a plurality of vias configured to feed a pn junction; the plurality of vias are distributed across a surface area of ​​the LED die with a peak density at or near a center of the LED die and a decreasing density with increasing distance from the peak density; 15. The lighting system of claim 14.

17. 1. A lighting system comprising: a light emitting diode die (LED die) including a p-n junction between p-doped and n-doped semiconductor materials, the LED die including a plurality of vias electrically connected in parallel with each other and configured to supply power to the p-n junction, the plurality of vias being non-uniformly distributed across a surface area of ​​the LED die with a peak density at or near a center of the LED die and decreasing with increasing distance from the peak density, such that when the plurality of vias are powered, the LED die emits light having a peak surface brightness at or near the center of the LED die and decreasing with increasing distance from the peak surface brightness; a high brightness area of ​​the LED die defined as an area of ​​the LED die where the surface brightness is 80% or greater than the peak surface brightness, the high brightness area being less than half of the surface area of ​​the LED die, and the high brightness area having a periphery; a radial separation between the periphery and an edge of the LED die extending along a line passing through the peak surface brightness, the radial separation varying by less than 20% of an average value of the radial separation around the periphery of the high brightness area; Equipped with the LED die includes a central contact pad located proximate to a center of the LED die; the central contact pad is configured to supply current to a via of the plurality of vias and to direct heat away from the LED die. Lighting system.

18. the surface area of ​​the LED die is a regular hexagon; 18. The lighting system of claim 17.

19. and further comprising a conductive layer extending at least partially across the surface area of ​​the LED die, the conductive layer being arranged such that, when the plurality of vias are energized, current flows through pn junctions between the conductive layer and the plurality of vias.

18. The lighting system of claim 17.

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