Semiconductor device and semiconductor device manufacturing method

Abstract

To provide a semiconductor element in which the decrease in reliability can be suppressed, and a manufacturing method for the semiconductor element.SOLUTION: A semiconductor element 1 includes a mount board 10, a semiconductor chip 20, and a wire 30. The wire 30 includes a first part 31, a first bent part 41, a second part 32, a second bent part 42, and a third part 33. The first bent part 41 exists closer to a surface 10s of the mount board 10 than to a surface 20s of the semiconductor chip 20, and is bent so that the second part 32 is guided to the surface 20s side. The second part 32 extends over the surface 20s on the opposite side of the surface 10s. The second bent part 42 is bent so that the third part 33 is guided to the surface 20s side. The third part 33 extends to the surface 20s from a position over the surface 20s on the opposite side of the surface 10s.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] Patent Document 1 describes a semiconductor device. In this semiconductor device, pads (first bonding points) of a semiconductor chip mounted on a lead frame are connected to leads (second bonding points) of the lead frame by wires. The wire loop shape connected to the first bonding point and the second bonding point is trapezoidal in side view, with a neck height portion on the first bonding point side, a sloped portion on the second bonding point side, and a trapezoidal length portion (loop apex portion) between the neck height portion and the sloped portion. The trapezoidal length portion is curved and formed into a downwardly concave shape. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 3189115 Summary of the Invention [Problem to be solved by the invention]

[0004] In the semiconductor device described in Patent Document 1, the top portion of the loop of the wire is formed into a recessed shape by being pressed, thereby forming a loop that has high shape retention against external pressure.

[0005] On the other hand, there is a demand for the above-mentioned semiconductor device to be encapsulated with resin. In this case, the encapsulating resin is also placed between the wire and the lead frame (the wire embraces the encapsulating resin). Therefore, stress due to the expansion and contraction of the encapsulating resin caused by thermal cycles is applied to the wire. The greater the amount of resin between the wire and the lead frame, the greater the stress applied to the wire in response to thermal cycles, which may damage the wire and reduce reliability.

[0006] An object of the present invention is to provide a semiconductor element and a method for manufacturing the semiconductor element that can suppress a decrease in reliability. [Means for solving the problem]

[0007] A semiconductor device according to the present invention comprises a mounting substrate having a first surface, a semiconductor chip mounted on the first surface and having a second surface facing the opposite side to the first surface, and a wire extending from a first bonding point on the first surface to a second bonding point on the second surface, and connecting the first bonding point and the second bonding point to electrically connect the mounting substrate and the semiconductor chip, the wire including a first portion, a first bent portion, a second portion, a second bent portion, and a third portion arranged in this order from the first bonding point to the second bonding point, When viewed from a first direction along the first and second surfaces, the first bent portion is located closer to the first surface than the second surface when viewed from the first direction, and is bent so as to lead the second portion toward the second surface, and the second portion extends beyond the second surface on the opposite side of the first surface when viewed from the first direction, and the second bent portion is bent so as to lead the third portion toward the second surface, and the third portion extends from a position beyond the second surface on the opposite side of the first surface toward the second surface and is joined to the second joining point.

[0008] This semiconductor element includes a wire for electrically connecting a mounting substrate and a semiconductor chip mounted on the mounting substrate. The wire connects a first bonding point on a first surface of the mounting substrate on which the semiconductor chip is mounted and a second bonding point on a second surface of the semiconductor chip. The wire includes a first portion, a first bent portion, a second portion, a second bent portion, and a third portion, which are arranged in this order from the first bonding point to the second bonding point (from the mounting substrate to the semiconductor chip). The first portion is a portion of the wire that extends from the first bonding point and is located closer to the first surface than the second surface (for example, below the second surface). The third portion is a portion of the wire that is bonded to the second bonding point and is located beyond the second surface on the opposite side to the first surface (for example, above the second surface). The second portion is a portion between the first and third portions and extends from a position on the first surface side beyond the second surface.

[0009] With this structure, when the semiconductor element is resin-encapsulated, the encapsulation resin is disposed between the wire and the mounting substrate. In contrast, with this wire, the first bent portion between the first and second portions is located closer to the first surface than the second surface, and is bent so as to lead the second portion toward the second surface. In other words, compared to a case where the first bent portion is not present, the wire extends toward the first surface (i.e., the first portion) before reaching the first bent portion, and extends beyond the second surface (i.e., the second portion) after reaching the first bent portion. In other words, compared to a case where the first bent portion is not present, the wire extends to follow the corner formed by the mounting substrate and the semiconductor chip. As a result, the amount of resin held by the wire when the semiconductor element is resin-encapsulated is reduced. Therefore, with this semiconductor element, stress applied to the wire due to thermal cycling can be reduced, suppressing a decrease in reliability.

[0010] In this semiconductor element, the wire is bent at a second bend between the second and third portions at a position beyond the second surface, and the third portion is led to the second surface side. The third portion is then extended from the position beyond the second surface toward the second surface and joined to the second joint point. This prevents the wire from coming into contact with the corners of the semiconductor chip, compared to when the second portion does not have the second bend and third portion and extends from the first surface side and is directly joined to the second joint point. This further reduces the risk of a decrease in reliability.

[0011] In the semiconductor element according to the present invention, the first bent portion may be located closer to the first bonding point than the center of the wire in the extending direction. In this case, the first bent portion is formed at a position relatively far from the semiconductor chip. As a result, when forming the first bent portion, the holder (capillary) that holds the wire is prevented from coming into contact with the semiconductor chip.

[0012] In the semiconductor element according to the present invention, the first bent portion may be located closer to the second bonding point than the center of the wire in the extending direction. In this case, the first bent portion is formed relatively close to the semiconductor chip. As a result, the portion of the wire extending toward the first surface (first portion) is secured to be relatively long, further reducing the amount of resin that the wire encases. In other words, it is possible to reliably reduce the stress applied to the wire and reliably prevent a decrease in reliability.

[0013] In the semiconductor element according to the present invention, the wire may include a fourth portion extending to connect the first bent portion and the second portion. In this case, the height of the semiconductor chip from the first surface can be ensured by at least the second and fourth portions, eliminating the need for sharp bending, which is prone to causing stress concentration. This makes it possible to more reliably prevent a decrease in reliability.

[0014] In the semiconductor element according to the present invention, the wire may extend obliquely relative to the outer edge of the semiconductor chip when viewed from a second direction intersecting the second surface. In this case, it is easier to ensure a long wire length (the distance between the first and second bonding points) compared to when the wire is perpendicular to the outer edge of the semiconductor chip. As a result, it is easier to realize the above-described structure of the wire including multiple portions and multiple bends.

[0015] The semiconductor element manufacturing method of the present invention is a semiconductor element manufacturing method for manufacturing the above-mentioned semiconductor element, and includes: a first step of preparing a mounting substrate, a semiconductor chip mounted on a first surface of the mounting substrate, and at least a base material for the wire; a second step of, after the first step, moving a capillary holding the base material to a first joining point and joining the tip of the base material protruding from the capillary to the first joining point; a third step of, after the second step, moving the capillary while guiding the base material from the capillary to form at least a first portion, a first bend, a second portion, a second bend, and a third portion arranged in order; and a fourth step of, after the third step, moving the capillary to the second joining point and joining the base material to the second joining point, thereby forming a wire extending from the first joining point to the second joining point.

[0016] According to this manufacturing method, the above-described semiconductor element can be manufactured, that is, a semiconductor element capable of suppressing a decrease in reliability can be obtained.

[0017] The semiconductor device manufacturing method according to the present invention may include a fifth step, after the first step but before the second step, of moving the capillary to a second bonding point, bonding the tip of the base material protruding from the capillary to the second bonding point, and then cutting the tip to form a bond at the second bonding point. In the fourth step, the base material may be bonded to the second bonding point via the bond. In this case, when the tip of the base material protruding from the capillary is bonded to the second bonding point after forming each portion of the wire, the bond already formed at the second bonding point is interposed, thereby reducing impact on the semiconductor chip. In particular, the bond is formed using the capillary and base material used to form each portion of the wire, thereby simplifying the process. [Effects of the Invention]

[0018] According to the present invention, it is possible to provide a semiconductor element and a method for manufacturing a semiconductor element that can suppress a decrease in reliability. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 is a diagram showing a semiconductor device according to an embodiment. [Figure 2] FIG. 2 is a photograph showing an example of the semiconductor element shown in FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view showing one step of a semiconductor element manufacturing method for manufacturing the semiconductor element shown in FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view showing one step of a semiconductor element manufacturing method for manufacturing the semiconductor element shown in FIG. [Figure 5] FIG. 5 is a schematic cross-sectional view showing a step of a semiconductor element manufacturing method for manufacturing the semiconductor element shown in FIG. [Figure 6] FIG. 6 is a diagram showing a semiconductor device according to a first modification. [Figure 7] FIG. 7 is a diagram showing a semiconductor device according to a second modification. [Figure 8] FIG. 8 is a diagram showing a semiconductor device according to a third modification. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, an embodiment will be described in detail with reference to the drawings. In each drawing, the same or corresponding elements are denoted by the same reference numerals, and redundant description may be omitted.

[0021] FIG. 1 is a diagram showing a semiconductor element according to an embodiment. FIG. 1(a) is a schematic plan view, and FIG. 1(b) is a schematic cross-sectional view taken along line Ib-Ib in FIG. 1(a). FIG. 2 is a photograph showing an example of the semiconductor element shown in FIG. 1. As shown in FIGS. 1 and 2, the semiconductor element 1 includes a mounting substrate 10, a semiconductor chip 20, wires 30, and a resin part M. Note that the resin part M is not shown in FIG. 1(a).

[0022] The mounting substrate 10 includes a front surface (first surface) 10s and a back surface 10r opposite to the front surface 10s. A plurality of flat electrodes 13 are formed on the front surface 10s. As an example, each of the plurality of electrodes 13 is elongated in a direction along an outer edge 20e of a semiconductor chip 20 described below. The plurality of electrodes 13 are arranged along the outer edge 20e.

[0023] The semiconductor chip 20 is mounted on the front surface 10s. The semiconductor chip 20 may be placed directly on the front surface 10s, or may be placed on the front surface 10s via another member. The semiconductor chip 20 includes a front surface (second surface) 20s and a back surface 20r opposite the front surface 20s. The front surface 20s and the back surface 20r define the height T of the semiconductor chip 20 from the front surface 10s as the distance between them. The back surface 20r is the surface facing the front surface 10s of the mounting substrate 10, and the front surface 20s is the surface facing the side of the mounting substrate 10 opposite to the front surface 10s. Here, at least the front surfaces 10s and 20s are parallel to each other.

[0024] The semiconductor chip 20 has, for example, a rectangular parallelepiped shape and has a linearly extending outer edge 20e. The outer edge 20e is an outer edge of the semiconductor chip 20 that faces the electrode 13 side (the bond portion 51 side described later). The semiconductor chip 20 is, for example, a semiconductor light receiving element (for example, a Si photodiode).

[0025] A bond portion 51 is formed on the surface 10s of the mounting substrate 10, and a bond portion 52 is formed on the surface 20s of the semiconductor chip 20. The bond portion 51 is formed on the electrode 13. The bond portion 52 is formed on the electrode 21 exposed on the surface 20s of the semiconductor chip 20 and is electrically connected to the semiconductor chip 20. As will be described later, the bond portions 51 and 52 are formed integrally with the wire 30 using the same material as the wire 30. Therefore, the wire 30 is bonded to the electrode 13 via the bond portion 51 on the mounting substrate 10 side, and is bonded to the electrode 21 via the bond portion 52 on the semiconductor chip 20 side. In other words, the electrode 13 is the first bonding point of the wire 30, and the electrode 21 is the second bonding point of the wire 30. The outer edge 20e of the semiconductor chip 20 and the edge of the electrode 13 on the outer edge 20e side define a distance D between the semiconductor chip 20 and the electrode 13.

[0026] In the following, a direction that intersects (is perpendicular to) the direction from electrode 13 toward electrode 21 (extension direction of wire 30) and that runs along surfaces 10s and 20s may be referred to as a first direction, and a direction that intersects (is perpendicular to) surfaces 10s and 20s may be referred to as a second direction. The first direction is, for example, the horizontal direction, and the second direction is, for example, the vertical direction.

[0027] Furthermore, no recesses, holes, or other structures that reduce the thickness of the mounting substrate 10 (the distance between the front surface 10s and the back surface 10r) are provided between the region on the front surface 10s of the mounting substrate 10 where the electrodes 13 are provided and the region on the front surface 10s where the semiconductor chip 20 is provided. Therefore, the thickness of the mounting substrate 10 is constant in the region on the front surface 10s where the electrodes 13 are provided, the region on the front surface 10s where the semiconductor chip 20 is provided, and the region between them. However, the thickness of the mounting substrate 10 may be thicker in the region between the region on the front surface 10s where the electrodes 13 are provided and the region on the front surface 10s where the semiconductor chip 20 is provided than in other regions.

[0028] Here, an insulating member 60 such as a resist is formed on the surface 10s between an area on the surface 10s where the electrodes 13 are provided and an area on the surface 10s where the semiconductor chip 20 is provided. The insulating member 60 is interposed between the surface 10s and the wires 30 when viewed from the first direction, and is also interposed between the semiconductor chip 20 and the electrodes 13 when viewed from the second direction.

[0029] The wire 30 extends from the electrode 13 toward the electrode 21 and connects the electrode 13 and the electrode 21, thereby electrically connecting the mounting substrate 10 and the semiconductor chip 20. As described above, the wire 30 is joined to and integrated with the bond portion 51 on the electrode 13 and the bond portion 52 on the electrode 21. The wire 30 is made of a metal such as gold. The wire 30 includes a first portion 31, a first bent portion 41, a second portion 32, a second bent portion 42, and a third portion 33, which are arranged in this order from the electrode 13 toward the electrode 21.

[0030] Here, the first portion 31 and the second portion 32 are connected to each other via the first bent portion 41, and the second portion 32 and the third portion 33 are connected to each other via the second bent portion 42. That is, here, the wire 30 is made up of the first portion 31, the first bent portion 41, the second portion 32, the second bent portion 42, and the third portion 33. The wire 30 is joined to the bond portion 51 at the first portion 31 (joined to the electrode 13 via the bond portion 51), and is joined to the bond portion 52 at the third portion 33 (joined to the electrode 21 via the bond portion 52).

[0031] The first portion 31 includes a base end 31a bonded to the electrode 13 via the bond portion 51, a tip end 31c connected to the second portion 32, and a bent portion 31b connecting the base end 31a and the tip end 31c. Here, the base end 31a extends from the electrode 13 toward the side opposite the surface 10s (here, upward), and reaches the bent portion 31b. The bent portion 31b is bent so as to be convex toward the side opposite the surface 10s. The tip end 31c extends at an angle approaching the surface 10s as it moves away from the bent portion 31b, and reaches the second portion 32. The first portion 31 described above is located on the surface 10s side relative to the surface 20s (here, below the surface 20s). That is, the first portion 31 is contained closer to the surface 10s than the surface 20s.

[0032] The first bent portion 41 is located closer to the surface 10s than the surface 20s when viewed from the first direction, and is interposed between the first portion 31 and the second portion 32 and connected to the first portion 31 and the second portion 32. The first bent portion 41 is bent so as to be convex toward the surface 10s. As a result, the first bent portion 41 converts the inclination of the wire 30 when viewed from the first direction from an inclination at the tip end 31c of the first portion 31 that approaches the surface 10s as it approaches the electrode 21 to an inclination at the second portion 32 (described later) that moves away from the surface 10s as it approaches the electrode 21. In other words, the first bent portion 41 is bent so as to guide the second portion 32 toward the surface 20s. The first bent portion 41 is located closer to the electrode 13 than the center of the wire 30 in the extension direction of the wire 30.

[0033] When viewed from the first direction, a part of the second portion 32 on the first bent portion 41 side is located closer to the surface 10s than the surface 20s (here, located below the surface 20s), and the remaining part on the electrode 21 side protrudes from the surface 20s on the side opposite the surface 10s (here, located above the surface 20s). That is, the second portion 32 extends beyond the surface 20s on the side opposite the surface 10s from the first bent portion 41. As described above, by having the second portion 32 guided by the first bent portion 41, the wire 30 is inclined so as to move away from the surface 10s as it approaches the electrode 21.

[0034] The second bent portion 42 is located at a position protruding from the surface 20s on the opposite side to the surface 10s when viewed from the first direction (here, it is located higher than the surface 20s), and is interposed between the second portion 32 and the third portion 33 and connected to the second portion 32 and the third portion 33. The second bent portion 42 is bent so as to be convex on the side opposite to the surfaces 10s and 20s. As a result, the second bent portion 42 converts the inclination of the wire 30 when viewed from the first direction from an inclination in the second portion that moves away from the surface 10s toward the electrode 21 to an inclination in the third portion 33 that moves closer to the surface 20s toward the electrode 21, which will be described later. In other words, the second bent portion 42 is bent so as to guide the third portion 33 toward the surface 20s. The second bent portion 42 is located closer to the electrode 21 than the center of the wire 30 in the extension direction of the wire 30.

[0035] The third portion 33 protrudes from the surface 20s toward the opposite side of the surface 10s when viewed from the first direction (here, it is positioned higher than the surface 20s). That is, the third portion 33 extends toward the surface 20s from a position beyond the surface 20s on the opposite side of the surface 10s when viewed from the first direction, and is joined to the bond portion 52 (electrode 21). As described above, the third portion 33 is guided by the second bent portion 42, so that the wire 30 is inclined toward the surface 20s as it approaches the electrode 21.

[0036] As a result of the above, the wire 30 as a whole is bent so as to be convex toward the surface 10s at the first bend 41, and is bent so as to be convex toward the opposite side of the surfaces 10s and 20s at the second bend 42, thereby extending in an M shape from the electrode 13 to the electrode 21.

[0037] When viewed from a second direction intersecting the surfaces 10s and 20s (in (a) of FIG. 1), the wires 30 extend obliquely with respect to the outer edge 20e of the semiconductor chip 20 (inclined with respect to a line perpendicular to the outer edge 20e). However, when viewed from the second direction, the wires 30 may extend parallel to a line perpendicular to the outer edge 20e of the semiconductor chip 20.

[0038] The resin portion M is provided on the surface 10s beyond the top surface (surface 20s) of the semiconductor chip 20. As a result, the entire semiconductor chip 20 and the wires 30 are sealed by the resin portion M. The material of the resin portion M is, for example, silicone or epoxy.

[0039] Next, a method for manufacturing the semiconductor element 1 will be described. FIGS. 3 to 5 are schematic cross-sectional views showing one step of a semiconductor element manufacturing method for manufacturing the semiconductor element shown in FIG. 1. In this manufacturing method, as shown in FIG. 3(a), first, a mounting substrate 10, a semiconductor chip 20 mounted on a surface 10s of the mounting substrate 10, and a base material 30A for at least the wires 30 are prepared (step S101, first step). The base material 30A is formed into a wire shape using a metal such as gold. The base material 30A is held (inserted) in a capillary C provided in a wire bonding device.

[0040] 3(a) to 3(c), the capillary C is moved to the electrode 21 as a second joining point, and the tip 30Aa of the base material 30A protruding from the capillary C is joined to the electrode 21, and then the tip 30Aa is cut off, thereby forming a bond portion 52 on the electrode 21 (step S102, fifth step). More specifically, in step S102, the tip 30Aa of the base material 30A protruding from the capillary C is first melted to form a wire ball. Next, the wire ball is pressed against the electrode 21 while applying heat or ultrasonic waves. This forms the bond portion 52 from the wire ball. Thereafter, the bond portion 52 is cut off from the base material 30A.

[0041] In the next step, as shown in FIGS. 4(a) and 4(b), the capillary C holding the base material 30A is moved to a position above the electrode 13, and a new tip 30Aa of the base material 30A protruding from the capillary C is bonded to the electrode 13 as a first bonding point (step S103, second step). More specifically, in step S103, first, the tip 30Aa of the base material 30A protruding from the capillary C is melted to form a wire ball. Then, the wire ball is pressed against the electrode 13 while applying heat or ultrasonic waves. As a result, a bond portion 51 is formed, and ball bonding is performed, as shown in FIG. 4(c).

[0042] Next, as shown in Figure 4(c) and Figures 5(a) to (c), while the base material 30A is being drawn out from the capillary C and while the base material 30A is being shaped, the capillary C is moved to form a first portion 31, a first bent portion 41, a second portion 32, a second bent portion 42, and a third portion 33 arranged in order (step S104, third step).

[0043] 5(c), the capillary C is moved to a position above the electrode 21, and the base material 30A is bonded to the electrode 21, thereby forming a wire 30 extending from the electrode 13 to the electrode 21 (step S105, fourth step). More specifically, the base material 30A is pressed against the bond portion 52 with the edge portion of the tip of the capillary C, and the base material 30A is bonded to the bond portion 52 by applying heat or ultrasonic waves, and then the base material 30A is cut (stitched). This completes stitch bonding. Thereafter, a resin portion M is provided, and the semiconductor element 1 is obtained.

[0044] As described above, the semiconductor element is provided with wires 30 for electrically connecting the mounting substrate 10 and the semiconductor chip 20 mounted on the mounting substrate 10. The wires 30 connect the electrodes 13 on the surface 10s of the mounting substrate 10 on which the semiconductor chip 20 is mounted, to the electrodes 21 on the surface 20s of the semiconductor chip 20. The wires 30 include a first portion 31, a first bent portion 41, a second portion 32, a second bent portion 42, and a third portion 33, which are arranged in this order from the electrode 13 toward the electrode 21 (from the mounting substrate 10 toward the semiconductor chip 20).

[0045] The first portion 31 is a portion of the wire 30 that extends from the electrode 13 (bond portion 51) and is located closer to the surface 10s than the surface 20s (for example, below the surface 20s). The third portion 33 is a portion of the wire 30 that is bonded to the electrode 21 (bond portion 52) and is located on the opposite side of the surface 10s beyond the surface 20s (for example, above the surface 20s). The second portion 32 is a portion between the first portion 31 and the third portion 33 and extends from a position on the surface 10s side beyond the surface 20s.

[0046] According to this structure, the resin of the resin portion M is disposed between the wire 30 and the mounting substrate 10. In contrast, in the wire 30, the first bent portion 41 between the first portion 31 and the second portion 32 is located closer to the surface 10s than the surface 20s, and is bent so as to guide the second portion 32 toward the surface 20s. That is, compared to a case in which the first bent portion 41 is not present, the wire 30 (i.e., the first portion 31) extends toward the surface 10s before reaching the first bent portion 41, and then (i.e., the second portion 32) extends beyond the surface 20s after reaching the first bent portion 41. That is, compared to a case in which the first bent portion 41 is not present, the wire 30 extends to follow the corner formed by the mounting substrate 10 and the semiconductor chip 20. As a result, the amount of resin held by the wire 30 is reduced. Therefore, according to the semiconductor element 1, stress applied to the wire 30 due to thermal cycles can be reduced, and a decrease in reliability can be suppressed.

[0047] In the semiconductor element 1, the wire 30 is bent at a second bent portion 42 between the second portion 32 and the third portion 33 at a position beyond the surface 20s, and the third portion 33 is led toward the surface 20s. The third portion 33 is then extended from a position beyond the surface 20s toward the surface 20s and bonded to the electrode 21 (bond portion 52). Therefore, compared to a case where the second bent portion 42 and the third portion 33 are not present and the second portion 32 extends from the surface 10s side and is directly bonded to the electrode 21 (bond portion 52), the wire 30 is prevented from coming into contact with a corner of the semiconductor chip 20. This further reduces a decrease in reliability.

[0048] Furthermore, in the semiconductor element 1, the first bent portion 41 is located closer to the electrode 13 than the center of the extension direction of the wire 30. Therefore, the first bent portion 41 is formed at a position relatively far from the semiconductor chip 20. As a result, when forming the first bent portion 41 as shown in FIG. 5(a), for example, the holder (for example, the above-mentioned capillary C) that holds the wire 30 is prevented from coming into contact with the semiconductor chip 20.

[0049] Furthermore, in the semiconductor element 1, the wires 30 extend obliquely relative to the outer edge 20e of the semiconductor chip 20 when viewed from a second direction intersecting the surfaces 10s and 20s. This makes it easier to ensure a long length for the wires 30 compared to when the wires 30 are perpendicular to the outer edge 20e of the semiconductor chip 20. As a result, it is easier to realize the above-described structure of the wires 30, which includes multiple portions and multiple bends.

[0050] In the semiconductor element 1, an insulating member 60 such as a resist is formed on the surface 10s between the region on the surface 10s where the electrodes 13 are provided and the region on the surface 10s where the semiconductor chip 20 is provided. The insulating member 60 can be used for purposes such as pattern formation of the mounting substrate 10 and insulation between wiring on the surface 10s, but by being interposed between the surface 10s and the wires 30, it also contributes to reducing the amount of resin held by the wires 30. Therefore, in the semiconductor element 1, a decrease in reliability is more reliably suppressed.

[0051] Furthermore, the semiconductor element manufacturing method according to this embodiment manufactures the semiconductor element 1 described above. That is, a semiconductor element capable of suppressing a decrease in reliability is obtained. In particular, the semiconductor element manufacturing method according to this embodiment includes, after step S101 and before step S103, step S102 of moving the capillary C to the electrode 21, joining the tip 30Aa of the base material 30A protruding from the capillary C to the electrode 21, and then cutting the tip 30Aa to form a bond portion 52 on the electrode 21. At this time, in step S105, the base material 30A is joined to the electrode 21 via the bond portion 52. As a result, when the tip of the base material 30A protruding from the capillary C is joined to the electrode 21 after each portion of the wire 30 is formed, the bond portion 52 already formed on the electrode 21 is interposed, thereby reducing impact on the semiconductor chip 20. In particular, since the bond portion 52 is formed using the capillary C and the base material 30A for forming each portion of the wire 30, the process is simplified.

[0052] The above embodiment has described one aspect of the present invention. Therefore, the present invention is not limited to the above embodiment and can be modified as desired. As an example, the semiconductor element 1 according to the above embodiment can be modified depending on the distance D between the semiconductor chip 20 and the electrode 13 and the height T of the semiconductor chip 20. Next, modified examples of the semiconductor element 1 according to the above embodiment will be described. [First Modification]

[0053] FIG. 6 is a diagram illustrating a semiconductor element according to a first modified example. (a) of FIG. 6 is a schematic cross-sectional view, and (b) of FIG. 6 is an enlarged photograph. In the example illustrated in FIG. 6, the distance D between the electrode 13 and the semiconductor chip 20 is increased compared to FIG. 1. In such a case, by positioning the first bent portion 41 on the semiconductor chip 20 side, the length of the first portion 31 extending toward the surface 10s rather than the surface 20s can be relatively increased. As a result, the first bent portion 41 is positioned closer to the electrode 21 than the center of the wire 30 in the extension direction. Note that, in this example, the tip portion 31c of the first portion 31, which is closer to the second portion 32 than the bent portion 31b, is extended, so that the first bent portion 41 is positioned closer to the electrode 21.

[0054] According to the first modification described above, the first bent portion 41 is formed at a position relatively close to the semiconductor chip 20. As a result, the portion of the wire 30 extending toward the front surface 10s (first portion 31) is secured to be relatively long, and the amount of resin held by the wire 30 is further reduced. In other words, the stress applied to the wire 30 is reliably reduced, and a decrease in reliability can be reliably prevented. [Second Modification]

[0055] 7 is a diagram showing a semiconductor element according to a second modified example. FIG. 7(a) is a schematic cross-sectional view, and FIG. 7(b) is an enlarged photograph. In the example of FIG. 7, the height T of the semiconductor chip 20 is increased compared to FIG. 1. Here, a third bent portion 43 and a fourth portion 34 are interposed between the first portion 31 and the first bent portion 41. The third bent portion 43 and the fourth portion 34 are arranged in this order in the direction from the electrode 13 toward the electrode 21.

[0056] The third bent portion 43 and the fourth portion 34 are located closer to the surface 10s than the surface 20s. The third bent portion 43 is connected to the first portion 31 and the fourth portion 34. The third bent portion 43 is bent so as to be convex toward the surface 10s. That is, the third bent portion 43 is bent so as to be convex in the same direction as the first bent portion 41. As a result, the third bent portion 43 converts the inclination of the wire 30, as viewed from the first direction, from an inclination at the tip end 31c of the first portion 31 that approaches the surface 10s as it approaches the electrode 21 to an inclination at the fourth portion 34, described below, that moves away from the surface 10s as it approaches the electrode 21. In other words, the third bent portion 43 is bent so as to guide the fourth portion 34 toward the surface 20s.

[0057] The fourth portion 34 extends at an angle away from the surface 10s toward the electrode 21, connecting the first portion 31 and the first bent portion 41. Here, the first bent portion 41 is positioned closer to the electrode 21 by the length of the fourth portion 34, and therefore the first bent portion 41 is positioned closer to the electrode 21 than the center of the extension direction of the wire 30. However, the first bent portion 41 may be positioned at the center of the extension direction of the wire 30 or closer to the electrode 13 than the center, depending on the length of the fourth portion 34.

[0058] In this example, the inclination direction of the wire 30 does not change before and after the first bent portion 41 (i.e., the fourth portion 34 and the second portion 32). That is, here, the first bent portion 41 is bent so as to be convex toward the surface 10s, so that the inclination at the fourth portion 34, which moves away from the surface 10s toward the electrode 21, is maintained in the second portion 32 as well.

[0059] According to the second modification, the height T of the semiconductor chip 20 from the surface 10s can be ensured by at least the second portion 32 and the fourth portion 34, eliminating the need for abrupt bending that is likely to cause stress concentration. This makes it possible to more reliably prevent a decrease in reliability. [Third Modification]

[0060] Fig. 8 is a diagram showing a semiconductor device according to a third modified example. Fig. 8(a) is a schematic cross-sectional view, and Fig. 8(b) is an enlarged photograph. In the example shown in Fig. 8, the bending angle of the bending portion 31b of the first portion 31 is made larger compared to the example in Fig. 1. More specifically, the bending portion 31b is bent at a right angle so as to connect the base end portion 31a extending perpendicular to the surface 10s with the tip end portion 31c extending parallel to the surface 10s.

[0061] According to the third modification, the first portion 31 extends from the electrode 13 along the surface 10s, further reducing the amount of resin held by the wire 30. That is, the stress applied to the wire 30 can be reliably reduced, and a decrease in reliability can be reliably prevented.

[0062] In the above-described semiconductor element 1, an example has been described in which the bond portion 52 is provided on the surface 20s of the semiconductor chip 20 and the wire 30 is bonded to this bond portion 52. Such bond portion 52 can be installed, for example, using the same material as the wire 30 prior to the placement of the wire 30, as described above. However, in the semiconductor element 1, the bond portion 52 is not essential, and the wire 30 may be directly bonded to the semiconductor chip 20. Furthermore, even when the bond portion 52 is provided, the bond portion 52 may be provided separately by a device different from the wire bonding device for the wire 30.

[0063] Furthermore, the positions of the bond portions 51, 52 can be set arbitrarily in the semiconductor element 1. Therefore, when viewed from the second direction, the inclination of the wire 30 with respect to the outer edge 20e of the semiconductor chip 20 can also be set arbitrarily depending on the positional relationship of the bond portions 51, 52 (electrodes 13, 21). [Explanation of symbols]

[0064] 1...semiconductor element, 10...mounting substrate, 10s...surface (first surface), 13...electrode (first bonding point), 20...semiconductor chip, 20s...surface (second surface), 21...electrode (second bonding point), 30...wire, 31...first part, 32...second part, 33...third part, 34...fourth part, 41...first bend, 42...second bend, 51...bond portion, 52...bond portion.

Claims

1. a mounting substrate having a first surface; a semiconductor chip mounted on the first surface and having a second surface facing the opposite side to the first surface; a wire extending from a first bonding point on the first surface toward a second bonding point on the second surface and connecting the first bonding point and the second bonding point, thereby electrically connecting the mounting substrate and the semiconductor chip; Equipped with the wire includes a first portion, a first bent portion, a second portion, a second bent portion, and a third portion, which are arranged in order from the first junction to the second junction; the first portion is located closer to the first surface than the second surface when viewed from a first direction along the first surface and the second surface, the first bent portion is located closer to the first surface than the second surface when viewed from the first direction, and is bent so as to lead the second portion toward the second surface, the second portion extends beyond the second surface on a side opposite to the first surface when viewed from the first direction, the second bent portion is bent so as to guide the third portion toward the second surface, the third portion extends from a position beyond the second surface on a side opposite to the first surface, toward the second surface, as viewed from the first direction, and is joined to the second joining point; an insulating member is formed on the first surface between the first bonding point and the semiconductor chip; At least a part of a portion of the wire that extends beyond the second surface on the opposite side to the first surface as viewed from the first direction overlaps the insulating member as viewed from a direction intersecting the first surface. Semiconductor element.

2. the first bent portion is located closer to the first joint point than the center of the wire in the extending direction; The semiconductor device according to claim 1 .

3. the first bent portion is located closer to the second joint point than the center of the wire in the extending direction; The semiconductor device according to claim 1 .

4. the wire includes a fourth portion extending to connect the first portion and the first bent portion; The semiconductor element according to any one of claims 1 to 3.

5. the wire extends obliquely with respect to an outer edge of the semiconductor chip when viewed from a second direction intersecting the second surface; The semiconductor device according to any one of claims 1 to 4.

6. the second bonding point is provided at a position farther from the center of the semiconductor chip than the first bonding point in a direction along the first surface and the second surface and intersecting a direction in which the semiconductor chip and the first bonding point are aligned; The semiconductor device according to any one of claims 1 to 5.

7. a plurality of the first junctions, a plurality of the second junctions, and a plurality of the wires; Each of the plurality of wires connects each of the plurality of first junctions to each of the plurality of second junctions. The semiconductor device according to any one of claims 1 to 6.

8. the plurality of first bonding points are located on one side of the semiconductor chip when viewed from a second direction intersecting the second surface; The semiconductor device according to claim 7 .

9. A semiconductor device manufacturing method for manufacturing the semiconductor device according to any one of claims 1 to 8, comprising: a first step of preparing a base material for the mounting substrate, the semiconductor chip mounted on the first surface of the mounting substrate, and at least the wire; After the first step, a second step of moving the capillary holding the base material to the first joining point and joining the tip of the base material protruding from the capillary to the first joining point; a third step of, after the second step, moving the capillary while leading out the base material from the capillary to form at least the first portion, the first bent portion, the second portion, the second bent portion, and the third portion, which are arranged in order; a fourth step of, after the third step, moving the capillary to the second joining point and joining the base material to the second joining point, thereby forming the wire extending from the first joining point to the second joining point; Equipped with Semiconductor device manufacturing method.

10. a fifth step of moving the capillary to the second joining point after the first step and before the second step, joining a tip of the base material protruding from the capillary to the second joining point, and then cutting the tip, thereby forming a bond portion at the second joining point; In the fourth step, the base material is joined to the second joining point via the bond portion. The method for manufacturing a semiconductor device according to claim 9.

11. A mounting substrate having a first surface; a semiconductor chip mounted on the first surface and having a second surface facing the opposite side to the first surface; a wire extending from a first bonding point on the first surface toward a second bonding point on the second surface and connecting the first bonding point and the second bonding point, thereby electrically connecting the mounting substrate and the semiconductor chip; Equipped with the wire includes a first portion, a first bent portion, a second portion, a second bent portion, and a third portion, which are arranged in order from the first junction to the second junction; the first portion is located closer to the first surface than the second surface when viewed from a first direction along the first surface and the second surface, the first bent portion is located closer to the first surface than the second surface when viewed from the first direction, and is bent so as to lead the second portion toward the second surface, the second portion extends beyond the second surface on a side opposite to the first surface when viewed from the first direction, the second bent portion is bent so as to guide the third portion toward the second surface, the third portion extends from a position beyond the second surface on a side opposite to the first surface, toward the second surface, as viewed from the first direction, and is joined to the second joining point; an insulating member is formed on the first surface between the first bonding point and the semiconductor chip; the second bonding point is provided at a position farther from the center of the semiconductor chip than the first bonding point in a direction along the first surface and the second surface and intersecting a direction in which the semiconductor chip and the first bonding point are aligned; Semiconductor element.

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