Method for manufacturing power semiconductor devices

Abstract

To provide a power semiconductor device having a structure corresponding to an application.SOLUTION: In the present invention, the substrate unit (6) in which the power semiconductor element (2) and the terminals (the power terminal 4 and the signal terminal 5) are mounted on the substrate (3) is manufactured, then the substrate unit (6) is attached to the casing (7) having the opening (8), then the opening (8) of the casing (7) is sealed with the sealing material, and then the opening (8) of the casing (7) is closed with the cover (9) according to the type of the sealing material. A power semiconductor (1c) in which an opening (8) of a casing (7) is closed by a cover (9) and a power semiconductor (1b) in which the opening (8) of the casing (7) is opened are selectively manufactured. The substrate unit (6) is sealed with a sealing material molded using a mold, and the power semiconductor device (1a) molded and sealed with the sealing material without mounting the casing (7) is selectively manufactured.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a power semiconductor device in which a power semiconductor element is packaged, and a method for manufacturing the power semiconductor device. [Background technology]

[0002] Power semiconductor devices are widely used as electronic components that can pass large currents to control the power of electronic devices.

[0003] Many of these power semiconductor devices are manufactured with a structure in which power semiconductor elements and terminals are mounted on a substrate, and then the substrate and power semiconductor elements are sealed with a molding resin (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2023-167416 Summary of the Invention [Problem to be solved by the invention]

[0005] The above-mentioned conventional power semiconductor devices are required to have not only a structure sealed with mold resin but also other suitable structures depending on various conditions such as the location where they are installed inside an electronic device and their intended use. [Means for solving the problem]

[0007] Therefore, in the present invention according to claim 1, in a method for manufacturing a power semiconductor device in which a power semiconductor element is packaged, a substrate unit is manufactured in which the power semiconductor element and terminals are mounted on a substrate, and then the substrate unit is mounted in a casing having an opening, and then: Manufactured Board unit In order of best dimensional accuracyThe opening of the casing of the selected substrate unit is sealed with a soft sealing material, and the openings of the casing of the other substrate units are sealed with a hard sealing material, and then the openings of the casing of the substrate unit sealed with the soft sealing material are closed with a cover, thereby selectively manufacturing a power semiconductor device sealed with the soft sealing material and whose casing opening is closed with a cover, and a power semiconductor device sealed with the hard sealing material and whose casing opening is open.

[0008] In addition, in the present invention according to claim 2, after the substrate unit is manufactured in the present invention according to claim 1, Not sealed with the soft or hard sealant The board unit is sealed with a sealing material formed using a mold, and a power semiconductor device molded and sealed with the sealing material without a casing is selectively manufactured. [Effects of the Invention]

[0009] The present invention provides the following effects.

[0010] That is, in the present invention, in a power semiconductor device in which a power semiconductor element is packaged, a substrate unit having the power semiconductor element and terminals mounted on a substrate is attached to a casing having an opening, the opening of the casing is sealed with a sealing material, and the opening of the casing is closed with a cover depending on the type of sealing material.Therefore, depending on the conditions of use, etc., it is possible to provide to the market power semiconductor devices having a structure in which the opening of the casing is closed with a cover and power semiconductor devices having a structure in which the opening of the casing is open.

[0011] Furthermore, in the present invention, in the method for manufacturing a power semiconductor device in which a power semiconductor element is packaged, a substrate unit is manufactured in which the power semiconductor element and terminals are mounted on a substrate, and then the substrate unit is attached to a casing having an opening. Thereafter, the opening of the casing is sealed with a sealing material, and then the opening of the casing is closed with a cover depending on the type of sealing material, and thus a power semiconductor device in which the casing opening is closed with a cover and a power semiconductor device in which the casing opening is open can be selectively manufactured. Therefore, it is possible to provide to the market power semiconductor devices with a structure in which the casing opening is closed with a cover and power semiconductor devices with a structure in which the casing opening is open depending on the conditions of use, etc.

[0012] In particular, if it is decided to selectively manufacture power semiconductor devices that are molded and sealed with sealing material without attaching a casing by sealing the substrate unit with a sealing material formed using a mold, it is possible to provide to the market power semiconductor devices with a structure in which the opening of the casing is closed with a cover, power semiconductor devices with a structure in which the opening of the casing is open, and power semiconductor devices with a structure in which no casing is attached and is sealed with sealing material, depending on the conditions of use, etc. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a perspective view illustrating a power semiconductor device. [Figure 2] 5A to 5C are explanatory diagrams showing a method for manufacturing a power semiconductor device. [Figure 3] FIG. [Figure 4] FIG. 10 is a perspective explanatory view showing the substrate unit after forming. [Figure 5] 1A is a perspective explanatory view showing a casing, FIG. 1B is a plan explanatory view of the same, and FIG. 1C is a perspective explanatory view showing a cover. [Figure 6] FIG. 2 is a perspective view illustrating a power semiconductor module. DETAILED DESCRIPTION OF THE INVENTION

[0014] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific configuration of a power semiconductor device and a method for manufacturing the power semiconductor device according to the present invention will be described below with reference to the drawings.

[0015] As shown in FIG. 1, the power semiconductor device 1 (1a, 1b, 1c) is a packaged power semiconductor element 2, and is selectively manufactured into a power semiconductor device 1a (FIG. 1(a)) having a structure in which a substrate unit 6, in which the power semiconductor element 2 and terminals (power terminals 4, signal terminals 5) are mounted on a substrate 3, is a common component, and the substrate unit 6 is sealed with a sealing material formed using a mold (molded sealed type), a power semiconductor device 1b (FIG. 1(b)) having a structure in which an opening 8 of a casing 7 accommodating the substrate unit 6 is open (open case sealed type), and a power semiconductor device 1c (FIG. 1(c)) having a structure in which the opening 8 of the casing 7 accommodating the substrate unit 6 is closed with a cover 9 (closed case sealed type). These three types of structures of the power semiconductor device 1 (1a, 1b, 1c) are selected and used as appropriate depending on various conditions such as the location where it is installed inside an electronic device or the like and the purpose of use.

[0016] FIG. 2 shows selective manufacturing methods for the power semiconductor devices 1 (1a, 1b, 1c) having these three types of structures.

[0017] First, the power semiconductor element 2 is placed in a predetermined position on the upper surface of the rectangular plate-shaped substrate 3 (chip mounting step).

[0018] Next, the circuit pattern formed on the substrate 3 and the power semiconductor element 2 are connected using wires (wire bonding step).

[0019] Next, a rectangular terminal plate 10 having terminals (power terminals 4, signal terminals 5) formed in a frame shape is ultrasonically bonded to a predetermined position on the substrate 3 (ultrasonic bonding step).

[0020] 3, a generally thin-plate-shaped substrate unit 6 is manufactured in which the power semiconductor elements 2 and terminals (power terminals 4, signal terminals 5) are mounted on the substrate 3. At this stage, the frame 11 has not been removed from the terminal board 10, and the terminals (power terminals 4, signal terminals 5) have not yet been bent.

[0021] Here, as shown in FIG. 2, when manufacturing a mold-sealed power semiconductor device 1a, a sealing material (resin) is molded onto a substrate unit 6 selected from the manufactured substrate units 6 based on the shape, etc., to seal the power semiconductor elements 2 and terminals (power terminals 4, signal terminals 5) mounted on the substrate 3 (molding process).

[0022] Next, the frames 11 of the terminal boards 10 of the board units 6 that have undergone the molding process and the board units 6 that have not undergone the molding process are cut away from the power terminals 4 and signal terminals 5, and the frames 11 are removed (trim process).

[0023] Next, the power terminals 4 and signal terminals 5 of the board unit 6 that has undergone the trimming process are bent into a predetermined shape (forming process).

[0024] As a result, the substrate unit 6 that has undergone the molding process becomes a substrate unit 6 that has been molded and sealed with a sealing material, similar to the power semiconductor device 1a shown in Figure 1(a), while the substrate unit 6 that has not undergone the molding process becomes a substrate unit 6 in a preliminary stage where the terminals are bent into a predetermined shape and sealed with a sealing material, as shown in Figure 4.

[0025] Here, as shown in FIG. 2, when manufacturing an open-case sealed power semiconductor device 1b or a closed-case sealed power semiconductor device 1c, the substrate unit 6, in which the terminals (power terminals 4, signal terminals 5) are bent into a predetermined shape and sealed with a sealing material, is housed in the opening 8 of the casing 7 and adhered (casing adhering process).

[0026] 5, casing 7 has a through-hole 12 formed vertically and having the same shape as board 3, a housing section 13 for housing board unit 6 formed above through-hole 12, and recesses 14 for housing and protecting the bent portions of power terminals 4 and recesses 15 for housing and protecting the bent portions of signal terminals 5 formed on the front and rear sides of housing section 13, and further has a mounting base 16 for mounting power terminals 4 formed on the front and rear sides of recess 14. Mounting base 16 has recesses 17 formed in it for housing nuts that connect to power terminals 4. Furthermore, connecting pieces 18 for mounting to electronic equipment are formed on the left and right sides of casing 7.

[0027] The casing 7 is open above the storage section 13 to form an opening 8, and the opening 8 (storage section 13) can be closed with a cover 9 that is fitted into the opening 8.

[0028] In the casing bonding step, the substrate 3 of the substrate unit 6 is fitted into the through-hole 12 of the casing 7, and the substrate 3 is bonded to the casing 7 in the receiving portion 13.

[0029] Next, as shown in FIG. 2, the substrate unit 6 that has undergone the casing bonding step is sealed with a sealant from above the substrate 3 in the housing portion 13 of the casing 7 (sealing step).

[0030] Here, the sealing material used may be a hard sealing material made of a thermosetting resin such as epoxy resin that hardens (solidifies) after sealing, or a soft sealing material such as silicone gel that has elasticity (does not solidify) after sealing.

[0031] In the sealing step, the substrate units 6 selected from the substrate units 6 that have been through the casing bonding step based on their shapes and the like are sealed with a soft sealing material, and the other substrate units 6 are sealed with a hard sealing material.

[0032] After the substrate unit 6 is sealed with the soft sealing material, a cover 9 is fitted into the opening 8 of the casing 7 and the cover 9 is adhered to the casing 7 (cover adhering step).

[0033] Finally, electrical and mechanical tests are carried out (testing process), and three types of power semiconductor devices 1 (1a, 1b, 1c) are manufactured.

[0034] That is, the mold-sealed power semiconductor device 1a is manufactured through a chip mounting process, a wire bonding process, an ultrasonic bonding process, a molding process, a trimming process, a forming process, and a testing process, the open-case sealed power semiconductor device 1b is manufactured through a chip mounting process, a wire bonding process, an ultrasonic bonding process, a trimming process, a forming process, a casing bonding process, a sealing process, and a testing process, and the closed-case sealed power semiconductor device 1c is manufactured through a chip mounting process, a wire bonding process, an ultrasonic bonding process, a trimming process, a forming process, a casing bonding process, a sealing process, a cover bonding process, and a testing process. In this case, the mold-sealed, open-case sealed, and closed-case sealed power semiconductor devices 1 (1a, 1b, 1c) can be manufactured by selecting based on the shape of the substrate unit 6, etc. For example, a case-closed sealed power semiconductor device 1c can be manufactured using a substrate unit 6 having a shape (dimensional accuracy) such that the terminals (power terminals 4, signal terminals 5) do not come into contact with the casing 7 or the cover 9 even when housed in the casing 7 and closed with the cover 9, and a mold-sealed power semiconductor device 1a can be manufactured using a substrate unit 6 having a shape (dimensional accuracy) such that the terminals (power terminals 4, signal terminals 5) come into contact with the casing 7 when housed in the casing 7.In this way, power semiconductor devices 1 can be manufactured in the order of best dimensional accuracy of the substrate unit 6: case-closed sealed, case-open sealed, and mold-sealed.

[0035] In this way, the manufacturing method of the above-mentioned power semiconductor device 1 (1a, 1b, 1c) makes it possible to manufacture three types of power semiconductor devices 1 (1a, 1b, 1c) according to the application, etc., while standardizing the manufacturing line, thereby reducing manufacturing costs.

[0036] As shown in Figure 6(a), multiple storage sections 13 (openings 8, through-holes 12) of the same size can be formed in the casing 7', and each storage section 13 can accommodate a board unit 6 consisting of the same basic circuit, or as shown in Figure 6(b), the openings 8 of each storage section 13 can be closed with covers 9 to form a power semiconductor device (power semiconductor module) configured to form a composite circuit consisting of multiple basic circuits.

[0037] Also, as shown in Figure 6, a heat sink 19 such as an air-cooled or water-cooled one can be attached to the casing 7', and the heat sink 19 can be pressed into contact with the heat dissipation pattern formed on the back surface of the board 3 of the board unit 6 at the through-hole 12.

[0038] As described above, the power semiconductor device 1 is configured such that a substrate unit 6 having power semiconductor elements 2 and terminals (power terminals 4, signal terminals 5) mounted on a substrate 3 is attached to a casing 7 having an opening 8, the opening 8 of the casing 7 is sealed with a sealing material, and the opening 8 of the casing 7 is closed with a cover 9 depending on the type of sealing material.

[0039] Therefore, with the power semiconductor device 1 having the above configuration, it is possible to provide to the market a power semiconductor device 1c having a structure in which the opening 8 of the casing 7 is closed by the cover 9, or a power semiconductor device 1b having a structure in which the opening 8 of the casing 7 is open, depending on the conditions of use, etc.

[0040] Furthermore, the manufacturing method of the power semiconductor device 1 is configured to manufacture a substrate unit 6 having power semiconductor elements 2 and terminals (power terminals 4, signal terminals 5) mounted on a substrate 3, then attach the substrate unit 6 to a casing 7 having an opening 8, then seal the opening 8 of the casing 7 with a sealing material, and then close the opening 8 of the casing 7 with a cover 9 depending on the type of sealing material, thereby selectively manufacturing a power semiconductor device 1c in which the opening 8 of the casing 7 is closed with the cover 9 and a power semiconductor device 1b in which the opening 8 of the casing 7 is open.

[0041] Therefore, in the manufacturing method of the power semiconductor device 1 having the above configuration, it is possible to provide to the market a power semiconductor device 1c having a structure in which the opening 8 of the casing 7 is closed by the cover 9, or a power semiconductor device 1b having a structure in which the opening 8 of the casing 7 is open, depending on the conditions of use, etc.

[0042] In addition, the manufacturing method of the power semiconductor device 1 is configured to selectively manufacture the power semiconductor device 1a molded and sealed with the sealing material without attaching the casing 7 by sealing the substrate unit 6 with the sealing material formed using a mold.

[0043] Therefore, in the manufacturing method of the power semiconductor device 1 having the above configuration, depending on the conditions of use, etc., it is possible to provide to the market a power semiconductor device 1c having a structure in which the opening 8 of the casing 7 is closed with the cover 9, a power semiconductor device 1b having a structure in which the opening 8 of the casing 7 is left open, or a power semiconductor device 1a having a structure in which the casing 7 is sealed with a sealing material without being attached. [Explanation of symbols]

[0044] 1, 1a, 1b, 1c Power semiconductor device 2 Power semiconductor element 3 PCB 4 Power terminal 5 Signal terminal 6 Board unit 7,7' casing 8 opening 9 Cover 10 Terminal board 11 Frame 12 Penetration section 13 Receiving portion 14 Recess 15 recess 16 mounting base 17 recess 18 connecting piece 19 Heat sink

Claims

1. In a method for manufacturing a power semiconductor device in which a power semiconductor element is packaged, We manufacture board units with power semiconductor elements and terminals mounted on the board, Then, the substrate unit is mounted in a casing having an opening, Thereafter, the openings of the casings of the substrate units selected in order of dimensional accuracy from the manufactured substrate units are sealed with a soft sealing material, and the openings of the casings of the other substrate units are sealed with a hard sealing material; Thereafter, the opening of the casing of the substrate unit sealed with the soft sealing material is closed with a cover, A method for manufacturing a power semiconductor device, characterized by selectively manufacturing a power semiconductor device that is sealed with a soft sealing material and has a casing opening closed with a cover, and a power semiconductor device that is sealed with a hard sealing material and has a casing opening open.

2. 2. The method for manufacturing a power semiconductor device according to claim 1, wherein, after manufacturing the substrate unit, the substrate unit that has not been sealed with the soft sealing material or the hard sealing material is sealed with a sealing material formed using a mold, thereby selectively manufacturing a power semiconductor device that is molded and sealed with a sealing material without attaching a casing.

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