Supports for manufacturing microelectronic products

Abstract

A carrier for fabricating microelectronic products may include a tempered substrate formed from glass or glass ceramic and having an average thickness of greater than 1.0 mm and less than or equal to 2.0 mm. 2 The substrate may also have a compressive stress of 200 MPa or more and a depth of layer of about 50 μm to about 150 μm. The substrate may further have a compressive stress of 40 kJ / m 2 It may also include a tensile stress region having a stored elastic energy of less than 5, providing a flat fragmentation factor of 5 or less.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 697,661, filed July 13, 2018, the contents of which are relied upon and incorporated herein by reference in their entirety. [Technical Field]

[0002] This specification relates generally to carriers used in the fabrication of microelectronic products, and more particularly to carriers used in the fabrication of microelectronic products that include reinforced substrates formed from glass or glass-ceramics. [Background technology]

[0003] Carriers are used during the fabrication of microelectronic wafers or panels to support the various components as the wafers or panels are "stacked" layer by layer on the carrier. Conventional fabrication techniques, such as fan-out wafer-level packaging (FOWLP) and fan-out panel-level packaging (FOPLP), expose the carrier to mechanical stresses, high temperatures, and harsh chemical environments, each of which can degrade the performance of conventional carriers fabricated from silicon, making them unsuitable for more than one use. Summary of the Invention [Problem to be solved by the invention]

[0004] Therefore, what is needed instead is a carrier that can withstand the harsh conditions of the microelectronics fabrication process. [Means for solving the problem]

[0005] According to various aspects disclosed herein, a carrier for fabricating microelectronic products can include a reinforced substrate formed from glass or glass ceramic. The reinforced substrate can have a first surface, a second surface opposite the first surface, and an average thickness between the first and second surfaces that is greater than 1.0 mm and less than or equal to 2.0 mm. The area of ​​one side of the reinforced substrate can be 70,000 mm 2 The reinforced substrate may also include a first compressive stress layer extending inward from the first surface toward the center of the reinforced substrate and having a first depth of 50 μm or more and 150 μm or less. The second compressive stress layer may extend inward from the second surface toward the center of the reinforced substrate and have a second depth of 50 μm or more and 150 μm or less. The surface compressive stress at the first and second surfaces of the reinforced substrate may be 200 MPa or more. The reinforced substrate may further include a first compressive stress layer located between the first compressive stress layer and the second compressive stress layer, 17 J / m 2 The reinforced substrate may include a tensile stress region having a stored elastic energy of less than 0.05 .mu.m. The reinforced substrate may have a flat fragmentation factor of 5 or less.

[0006] Another embodiment includes the carrier of any of the above embodiments, wherein the surface compressive stress at the first surface and the second surface of the reinforced substrate is 700 MPa or less.

[0007] Another embodiment includes the carrier of any of the above embodiments, wherein the surface compressive stress at the first surface and the second surface of the reinforced substrate is 450 MPa or more and 650 MPa or less.

[0008] Another embodiment includes the support of any of the above embodiments, wherein the first layer depth and the second layer depth are 60 μm or more and 100 μm or less.

[0009] Another embodiment includes the carrier of any of the above embodiments, wherein the stored elastic energy of the tensile stress region is: 16.6 J / m 2 The following is the result.

[0010] Another embodiment includes the carrier of any of the above embodiments, wherein the stored elastic energy of the tensile stress region is: 16.2J / m 2 The following is the result.

[0011] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a flat fragmentation factor of 3 or less.

[0012] Another embodiment includes the support of any of the above embodiments, wherein the first surface has a surface roughness Ra of 1 μm or less.

[0013] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a transmittance of 50% or more for light wavelengths of 300 nm or more and 355 nm or less.

[0014] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a transmittance of 70% or more for light wavelengths of 300 nm or more and 355 nm or less.

[0015] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a strength of 10 GPa-mm 3 The bending rigidity is as above.

[0016] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a retained strength of 300 MPa or greater after indentation with an indentation load of 1 kilogram force (approximately 10 N).

[0017] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a retained strength of 100 MPa or greater after being indented with an indentation load of 2 kilograms force (approximately 20 N).

[0018] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a retained strength of 70 MPa or greater after indentation with an indentation load of 3 kilograms force (approximately 29 N).

[0019] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a retained strength of 45 MPa or greater after indentation with an indentation load of 4 kilograms force (approximately 39 N).

[0020] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has an average thickness of 1.8 mm or less.

[0021] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has an average thickness of 1.5 mm or less.

[0022] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has an average thickness of 1.1 mm or less.

[0023] Another embodiment includes the support of any of the above embodiments, wherein the reinforced substrate is an ion-exchange reinforced substrate.

[0024] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has an average of 9×10 -6 K -1 The thermal expansion coefficient is equal to or greater than this.

[0025] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate comprises an alkali aluminosilicate glass.

[0026] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has an in-process warp of 4,000 μm or less to 9,000 μm or more.

[0027] Another embodiment includes the carrier of any of the above embodiments, wherein the reinforced substrate has a warp at the time of completion of forming of 0 μm or more and 500 μm or less.

[0028] According to some embodiments disclosed herein, a method for forming a carrier for microelectronic product fabrication may include immersing a glass or glass-ceramic substrate in a molten salt bath containing a mixture of about 90% to about 98% potassium nitrate and about 2% to about 10% sodium nitrate by weight at a temperature of 380° C. to 460° C. for a period of 5 hours to 30 hours. The glass or glass-ceramic substrate has a first surface, a second surface opposite the first surface, and a 70,000 mm 2 and an average thickness between the first and second surfaces of greater than 1.0 mm and less than or equal to 2.0 mm.

[0029] Other embodiments include the method of any of the above embodiments, wherein the molten salt bath comprises a mixture of about 93% to about 95% by weight potassium nitrate and about 5% to about 7% by weight sodium nitrate.

[0030] Other embodiments include the method of any of the above embodiments, wherein the glass or glass-ceramic substrate is immersed in the molten salt bath at a temperature of about 450° C. for a period of at least 6 hours and not more than about 15 hours.

[0031] Other embodiments include the method of any of the above embodiments, wherein after immersing the glass or glass-ceramic substrate in the molten salt bath, the glass or glass-ceramic substrate comprises a first compressive stress layer extending inward from the first surface toward the center of the glass or glass-ceramic substrate and having a first depth of 50 μm or more and 150 μm or less. The substrate also comprises a second compressive stress layer extending inward from the second surface toward the center of the glass or glass-ceramic substrate and having a second depth of 50 μm or more and 150 μm or less, and the surface compressive stress at the first and second surfaces of the glass or glass-ceramic substrate can be 200 MPa or more. The glass or glass-ceramic substrate further comprises a second compressive stress layer positioned between the first compressive stress layer and the second compressive stress layer: 17 J / m 2 The substrate may also include a tensile stress region having a stored elastic energy of less than 0.05 .mu.m. The substrate may also include a flat fragmentation factor of 5 or less.

[0032] Additional features and advantages of the carriers comprising reinforced substrates formed from glass or glass ceramics for fabricating the microelectronic products described herein are set forth in the detailed description that follows, and in part will be readily apparent to those skilled in the art from that description or may be learned by practice of the embodiments described herein, including the following detailed description, claims, and drawings.

[0033] It should be understood that both the foregoing general description and the following detailed description are intended to provide an overview or framework for understanding the nature and features of the various embodiments and claimed subject matter. The accompanying drawings are provided to provide a further understanding of the various embodiments and are incorporated in and form a part of this specification. The drawings illustrate various embodiments described herein and, together with the description, serve to explain the principles and operation of the claimed subject matter. [Brief explanation of the drawings]

[0034] [Figure 1] 1 shows a schematic representation of a process for fabricating a microelectronic product on a carrier. [Figure 2] 1 is a top view schematic of a carrier including a reinforced substrate formed from a glass or glass ceramic according to one or more embodiments described herein. FIG. [Figure 3] FIG. 3 is a cross-sectional view schematically illustrating the carrier of FIG. 2. [Figure 4] FIG. 1 is a cross-sectional view showing a substrate, such as a reinforced substrate, undergoing indentation with an indenter to assess the retained strength of the substrate. [Figure 5] FIG. 1 is a cross-sectional view showing a schematic representation of a substrate, such as a reinforced substrate, undergoing four-point bending to assess the retained strength of the substrate after indentation. [Figure 6] FIG. 1 is a cross-sectional view that schematically illustrates a substrate, such as a reinforced substrate, subjected to a flat fragmentation load to evaluate the flat fragmentation coefficient of the substrate. [Figure 7]1 is a drawing (based on a photograph) of the reinforced substrate after the flat fragmentation test, showing that the reinforced substrate fragmented into two main pieces (i.e., the flat fragmentation factor of the reinforced substrate was 2). [Figure 8] Drawing (based on a photograph) of the unreinforced substrate after the flat fragmentation test, showing that the unreinforced substrate fragmented into four main pieces (i.e., the flat fragmentation factor of the unreinforced substrate was 4). [Figure 9] 1 is a graph showing the retained strength (shown in MPa on the Y-axis) as a function of indentation load (shown in kilogram-force on the X-axis) for reinforced and unreinforced substrates. [Figure 10] 1 is a graph showing in-process warpage (shown in μm on the Y-axis) as a function of substrate thickness (shown in millimeters on the X-axis) for substrates having different thicknesses and having different coatings applied. DETAILED DESCRIPTION OF THE INVENTION

[0035] Various embodiments of a carrier for microelectronic product fabrication including a reinforced substrate formed from glass or glass ceramic will now be described in detail, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used to refer to the same or similar parts throughout the views. One embodiment of the carrier is shown schematically in Figures 2 and 3. The carrier generally includes a reinforced substrate formed from glass or glass ceramic. The reinforced substrate has a first surface, a second surface opposite the first surface, and an average thickness between the first and second surfaces that is greater than 1.0 mm and less than or equal to 2.0 mm. The area of ​​one side of the reinforced substrate is 70,000 mm 2The tempered glass substrate may also include a first compressive stress layer extending inward from the first surface toward a center of the tempered substrate, the first compressive stress layer having a first depth of 50 μm to 150 μm. The second compressive stress layer may extend inward from the second surface toward a center of the tempered substrate, the second depth of 50 μm to 150 μm. The surface compressive stress at the first and second surfaces of the tempered substrate may be 200 MPa or greater. The tempered substrate may further include a tensile stress region located between the first and second compressive stress layers, the tensile stress region having a 17 J / m 2 The reinforced glass substrate may have a stored elastic energy of less than 1 / 2. The planar fragmentation coefficient of the reinforced glass substrate may be less than or equal to 5. Various embodiments of carriers including reinforced substrates formed from glass or glass-ceramics used to fabricate microelectronic products will now be described in more detail with specific reference to the accompanying drawings.

[0036] In the description that follows, ranges may be expressed as from "about" one particular value, and / or to "about" another particular value. When such a range is expressed, another embodiment includes from the one particular value and / or to the other particular value. Similarly, when values ​​are expressed as approximations, by use of "about," it will be understood that the particular value forms another embodiment. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.

[0037] Directional terms used herein, such as up, down, right, left, front, back, top, bottom, etc., are described in relation to the drawings only and are not intended to imply absolute orientations.

[0038] Unless otherwise expressly stated, it is not intended that any method set forth herein be construed as requiring that its steps be performed in a particular order or as requiring a particular orientation of any apparatus. Thus, while method claims may not actually recite the order in which steps are to be performed, or any apparatus may not actually recite the order or orientation of individual components, no order or orientation is intended to be inferred unless the claims or specification recite a specific order of steps or a specific order or orientation of components. This applies to logical matters relating to the sequence of steps, operational flow, order or orientation of components, simple meanings derived from grammatical structures or punctuation, as well as any matter based on the absence of a statement of interpretation, including the number or type of embodiments described herein.

[0039] As used herein, the singular, with indefinite and definite articles in the original English, includes the plural unless the context clearly indicates otherwise. Thus, for example, an element with an indefinite article in the original English includes two or more of such elements unless the context clearly indicates otherwise.

[0040] As used herein, the term "CTE" refers to the coefficient of thermal expansion of a substrate averaged over the temperature range of 20°C to 300°C.

[0041] The elastic modulus (also called Young's modulus) of the substrate is provided in units of gigapascals (GPa) and is determined by resonant ultrasound spectroscopy on a bulk sample of the substrate.

[0042] Compressive stress and depth of layer are determined using a fundamental stress measurement (FSM) instrument, such as the FSM-6000 manufactured by Orihara Seisakusho Co., Ltd. (Tokyo, Japan), to determine compressive stress values ​​based on the measured stress optical coefficient (SOC). The FSM instrument couples light into and separates it from the birefringent surface of the substrate. The measured birefringence is then related to stress via material constants to obtain the stress optical coefficient or photoelastic coefficient (SOC or PEC) and two parameters: maximum surface compressive stress (CS) and exchanged depth of layer (DOL).

[0043] Axial transmittance (referred to herein as "transmittance") for ultraviolet wavelengths of light was determined using a Lambda950 UV / Vis Spectrophotometer manufactured by PerkinElmer Inc. (Waltham, Massachusetts, USA). The Lambda950 instrument was coupled with a 150 mm integrating sphere with operating parameters of 2500 nm to 200 nm. Transmittance is reported as the percentage of intensity at a given wavelength that passes through the substrate (i.e., transmittance T = (transmitted intensity / incident intensity) x 100).

[0044] Referring now to FIG. 1 , a non-limiting example of a microelectronic product fabrication process 10 is illustrated schematically. Process 10 may be, for example, a fan-out process for producing wafers with embedded microelectronic devices. Process 10 generally includes an initial step 12 in which a tape 32 is laminated to a carrier 34 that includes a substrate. Conventionally, the substrate of the carrier is formed, for example, from silicon. Subsequently, in step 14, electronic components 36 are disposed on tape 32. Next, in step 16, a wafer 38 may be molded onto the electronic components 36. Thereafter, in step 18, the carrier 34 is removed (also referred to as “separating”) from the formed wafer. In step 20, a ball grid array 40 may be applied to wafer 38, after which wafer 38 may be diced into discrete microelectronic components 42.

[0045] As the dimensions of microelectronic elements decrease, high surface planarity of the carrier substrate is required to facilitate maintaining the tight tolerances required for the microelectronic elements and the wafers formed thereon. Additionally, the carrier substrate should facilitate laser separation of the wafer from the substrate and also be able to withstand the stresses and harsh chemical environments of the microelectronic fabrication process.

[0046] Glass substrates have been identified as suitable alternatives to traditional carrier substrates made from silicon due to their excellent flatness, optical transparency at certain wavelengths, dimensional stability, and chemical durability. Indeed, glass substrates are significantly improved over traditional carrier substrates, at least in terms of dimensional stability and chemical durability, allowing glass substrates to be reused multiple times in microelectronic product processing before being discarded.

[0047] However, unstrengthened glass substrates are not defect-free. In particular, unstrengthened glass substrates used in carriers for microelectronic product fabrication can experience various mechanical stresses when various components are pressed and / or molded onto the surface of the substrate. These mechanical stresses can ultimately lead to failure of the unstrengthened glass substrate due to cracking. The generation of glass chips, especially numerous small glass chips, in fabrication tools can disrupt the precise operation of the tool, requiring costly tool downtime to remove the glass chips. This, in turn, reduces manufacturing efficiency and increases production costs.

[0048] Embodiments described herein relate to carriers for use in microelectronics fabrication, including reinforced substrates. The reinforced substrates are formed from glass or glass-ceramics, which mitigate substrate breakage due to mechanical shocks routinely encountered during the microelectronics fabrication process. In cases where substrate breakage is anticipated, the reinforced substrates described herein also provide for selective substrate breakage, reducing the number of debris resulting from substrate breakage.

[0049] Referring now to FIGS. 2 and 3 , one embodiment of a carrier 100 is shown schematically. The carrier 100 described herein includes a reinforced substrate 102. Although not shown, the carrier 100 may further include additional components, such as, but not limited to, coatings, alignment features, and the like. In the embodiment shown in FIGS. 2 and 3 , the reinforced substrate 102 of the carrier 100 is rectangular or square in shape. While FIG. 2 schematically illustrates the reinforced substrate 102 with a rectangular or square cross-section, it should be understood that other shapes of the reinforced substrate are contemplated and may include, but are not limited to, regular geometric shapes such as circles, triangles, octagons, or irregular geometric shapes. In embodiments, the shape of the reinforced substrate may be specifically tailored to provide alignment features for orienting the reinforced substrate during microelectronic product fabrication processing.

[0050] In the embodiments described herein, the reinforced substrate 102 has a first surface 104, a second surface 106 opposite the first surface, and an average thickness T between the first surface 104 and the second surface 106. The reinforced substrate 102 may have a relatively large surface area to maximize the number of microelectronic devices fabricated per carrier. In embodiments, the area of ​​one side (i.e., the area of ​​the first surface 104 of the reinforced substrate 102 or the area of ​​the second surface 106 of the reinforced substrate 102) is 70,000 mm 2 For example, in some of these embodiments, the area of ​​one side of the reinforced substrate 102 is 90,000 mm 2 or more, or 122,500 mm 2 In some of these embodiments, the area of ​​one side of the reinforced substrate 102 can be 160,000 mm 2 or more, or 202,500 mm 2 In some of these embodiments, the area of ​​one side of the reinforced substrate 102 can be 250,000 mm 2 or more, or 302,500 mm 2 In some of these embodiments, the area of ​​one side of the reinforced substrate 102 can be 360,000 mm 2or more, or 422,500 mm 2 In some of these embodiments, the area of ​​one side of the reinforced substrate 102 can be 490,000 mm 2 or more, or 562,500 mm 2 In some of these embodiments, the area of ​​one side of the reinforced substrate 102 can be 640,000 mm or more. 2 or more, or 722,500 mm 2 In some of these embodiments, the area of ​​one side of the reinforced substrate 102 can be 810,000 mm or more. 2 or more, or 902,500 mm 2 In each of the above embodiments, the area of ​​one side of the reinforced substrate 102 is 1 m 2 It can be the following:

[0051] In the embodiments described herein, the average thickness T of the reinforced substrate 102 can be greater than 1.0 mm and less than or equal to 2.0 mm. If the reinforced substrate 102 has an average thickness less than about 1.0 mm, the substrate may warp or bow significantly during microelectronic fabrication processing, resulting in unacceptable processing variations. If the reinforced substrate 102 has an average thickness greater than about 2.0 mm, the combination of the thickness of the substrate and the thicknesses of the various layers and components deposited thereon may be too large for the space constraints of the microelectronic fabrication tool. In the embodiments of the carrier 100 described herein, the average thickness T of the reinforced substrate 102 can be less than or equal to 1.8 mm, less than or equal to 1.5 mm, or less than or equal to 1.1 mm.

[0052] The strengthened substrate 102 described herein is a glass or glass-ceramic and can be formed from a variety of different glass and / or glass-ceramic compositions. In embodiments, the strengthened substrate is formed from an alkali aluminosilicate glass composition. For example, in embodiments, the strengthened substrate can be formed from an alkali aluminosilicate glass composition including about 57 mol% to about 75 mol% SiO, about 7 mol% to about 17 mol% AlO, 0 mol% to about 12 mol% BO, about 9 mol% to about 21 mol% NaO, 0 mol% to about 4 mol% KO, 0 mol% to about 7 mol% MgO, and 0 mol% to about 3 mol% CaO. In certain embodiments, the strengthened substrate may be formed from an alkali aluminosilicate glass composition including 69.49 mol% SiO, 8.45 mol% AlO, 14.01 mol% NaO, 1.16 mol% KO, 0.185 mol% SnO, 0.507 mol% CaO, 6.2 mol% MgO, 0.01 mol% ZrO, and 0.008 mol% FeO. In certain embodiments, the strengthened substrate may be formed from an alkali aluminosilicate glass composition including 67.55 mol% SiO, 3.67 mol% B0, 12.67 mol% Al0, 13.66 mol% Na0, 0.014 mol% K0, 2.33 mol% MgO, 0 mol% CaO, 0.008 mol% Fe0, 0.005 mol% Zr0, and 0.10 mol% Sn0.

[0053] In embodiments, the strengthened substrate may be formed from an alkali aluminosilicate glass composition comprising about 57 mol% to about 75 mol% SiO, about 6 mol% to about 17 mol% AlO, 0 mol% to about 15 mol% BO, 0 mol% to about 15 mol% LiO, 0 mol% to about 20 mol% NaO, 0 mol% to about 10 mol% KO, 0 mol% to about 8 mol% MgO, 0 mol% to about 10 mol% CaO, 0 mol% to about 5 mol% ZrO, 0 mol% to about 1 mol% SnO, 0 mol% to about 1 mol% CeO, less than about 50 ppm AsO, and less than about 50 ppm SbO, where 12 mol%≦LiO+NaO+KO≦20 mol%, and 0 mol%≦MgO+CaO≦10 mol%. In certain embodiments, the strengthened substrate may be formed from an alkali aluminosilicate glass composition including 66.16 mol% SiO, 10.29 mol% AlO, 14.0 mol% NaO, 2.45 mol% KO, 0.6 mol% BO, 0.21 mol% SnO, 0.58 mol% CaO, 5.7 mol% MgO, 0.0105 mol% ZrO, and 0.0081 mol% FeO. In certain embodiments, the strengthened substrate may be formed from an alkali aluminosilicate glass composition including 64.74 mol% SiO, 5.14 mol% B0, 13.94 mol% Al0, 13.72 mol% Na0, 0 mol% KO, 2.38 mol% MgO, 0 mol% CaO, and 0.08 mol% Sn0.

[0054] Additionally, glass compositions suitable for fabricating the strengthened substrate may include, but are not limited to, glass compositions described in U.S. Pat. No. 8,969,226, assigned to Corning Incorporated, entitled "Glasses Having Improved Toughness And Scratch Resistance," U.S. Pat. No. 8,586,492, assigned to Corning Incorporated, entitled "Crack and Scratch Resistant Glass And Enclosures Made Therefrom," and U.S. Pat. No. 8,951,927, assigned to Corning Incorporated, entitled "Zircon Compatible, Ion Exchangable Glass With High Damage Resistance."

[0055] As described herein, the reinforced substrate of the carrier can also be formed from a glass-ceramic material that can be strengthened by ion exchange. Suitable glass-ceramic compositions include, but are not limited to, the glass-ceramics disclosed in U.S. Patent Publication No. 2016 / 0102010, assigned to Corning Incorporated, and entitled "HIGH STRENGTH GLASS-CERAMICS HAVING PETALITE AND LITHIUM SILICATE STRUCTURES."

[0056] Although specific glass or glass-ceramic compositions and / or compositional spaces are described, it should be understood that these compositions and / or compositional spaces are exemplary only, and that other glasses or glass-ceramics are contemplated and may be used.

[0057] In embodiments, the first surface 104 of the reinforced substrate 102 may be the surface on which microelectronic components are placed during the microelectronic product fabrication process, and the second surface 106 of the reinforced substrate 102 may be the underside of the carrier 100. In the embodiments described herein, the first surface 104 of the reinforced substrate 102 has a surface roughness Ra of 1 μm or less, or a surface roughness Ra of 0.5 μm or less. In some of these embodiments, the first surface 104 has a surface roughness Ra of 0.2 μm or less, or a surface roughness Ra of 0.1 μm or less. In some of these embodiments, the first surface 104 of the reinforced substrate 102 has a surface roughness Ra of 0.01 μm or less.

[0058] In some embodiments, the second surface 106 of the reinforced substrate 102 may have the same surface roughness as the first surface 104 of the reinforced substrate 102. In some other embodiments, the second surface 106 of the reinforced substrate 102 may have a surface roughness that is greater than the surface roughness of the first surface 104 of the reinforced substrate.

[0059] The reinforced substrate 102 described herein may be substantially transparent to certain wavelengths of electromagnetic radiation, facilitating separation of the microelectronic elements from at least one of the first surface 104 and the second surface 106 of the reinforced substrate. For example, in some embodiments, the reinforced substrate 102 has a transmittance of 50% or greater for light in the ultraviolet spectrum (i.e., light with wavelengths from about 10 nm to about 400 nm). If the transmittance of the substrate is less than 50% for wavelengths within this range, separation of the microelectronic elements may not be achieved. In some embodiments, the reinforced substrate has a transmittance of 50% or greater, or 60% or greater, for ultraviolet wavelengths between 300 nm and 355 nm. In some of these embodiments, the transmittance may be 70% or greater, or 80% or greater, for ultraviolet wavelengths between 300 nm and 355 nm.

[0060] In the embodiments described herein, the reinforced substrate has a melting point of 8×10 averaged over the temperature range of 20° C. to 300° C.-6 K -1 CTE of 9×10 or greater averaged over the temperature range 20°C to 300°C -6 K -1 These CTE values ​​reduce the CTE difference between the substrate and the coatings and / or components adhered to the substrate during the microelectronic fabrication process, thereby minimizing distortion of the substrate during the thermal cycles to which it is subjected during the microelectronic fabrication process.

[0061] 2 and 3 , in the embodiments described herein, the term “reinforced substrate” refers to a substrate that, during or after formation of the substrate, is subjected to processing conditions that introduce compressive stresses into the surface of the substrate, thereby increasing the substrate's resistance to damage-induced failure. Accordingly, the reinforced substrates described herein further include first and second compressive stress layers 108, 110, respectively, extending from the first and second surfaces 104, 106 of the reinforced substrate 102 toward the center of the reinforced substrate 102 to a depth-of-layer (DOL). The compressive stress of the first and second compressive stress layers 108, 110 is generally greatest at the first and second surfaces 104, 106 of the reinforced substrate 102 and decreases toward the center of the reinforced substrate 102 until the compressive stress reaches zero. The depth from the surface where the compressive stress reaches zero generally represents the DOL of each of the first and second compressive stress layers 108, 110. The first compressive stress layer 108 and the second compressive stress layer 110 are separated by a tensile region 112 located between the first compressive stress layer 108 and the second compressive stress layer 110 .

[0062] As described herein, the compressive stress of the first compressive stress layer 108 and the second compressive stress layer 110 is generally greatest at the first surface 104 and the second surface 106 of the reinforced substrate 102, and is referred to herein as the surface compressive stress. In the embodiments described herein, the surface compressive stress is generally 200 MPa or greater, enabling the reinforced substrate to withstand the mechanical shocks of the microelectronics fabrication process with a relatively low risk of fracture. That is, if the surface compressive stress is less than 200 MPa, there is an increased risk that mechanical shocks to the reinforced substrate 102 of the carrier 100 that occur during the microelectronics fabrication process, combined with stresses applied to the reinforced substrate 102 of the carrier 100 during processing, may lead to fracture of the reinforced substrate 102. In embodiments, the surface compressive stress of the first compressive stress layer 108 and the second compressive stress layer 110 is 200 MPa or greater and 700 MPa or less. In some of these embodiments, the surface compressive stress of the first compressive stress layer 108 and the second compressive stress layer 110 is greater than or equal to 450 MPa and less than or equal to 650 MPa.

[0063] The first compressive stress layer 108 and the second compressive stress layer 110 each extend to a DOL of 50 μm to 150 μm, inclusive. A DOL of less than 50 μm may not accommodate scratches caused by mechanical shocks experienced during the microelectronics fabrication process, which may lead to fracture of the reinforced substrate 102. In some embodiments, the depth of layer is 60 μm to 100 μm, inclusive.

[0064] One result of introducing compressive stress into the reinforced substrate 102 is a complementary increase in tensile stress in the tension region 112. To maintain a balance of physical forces, the amount of stored elastic energy (SEE) in both the first and second compressive stress layers 108, 110 and the tension region 112 must be equal, canceling out and reducing the stress in the reinforced substrate to zero. In most cases, the surface compressive stress at the first and second surfaces 104, 106 will be relatively large, while the tension region 112 will have a smaller tensile stress. That is, the compressive stress in the first and second compressive stress layers 108, 110 will be distributed over a relatively shallow depth, while the small tensile stress will be distributed over a larger portion of the thickness T of the substrate.

[0065] Herein, the energy stored in the tensile region 112 by introducing a compressive stress at the surfaces 104, 106 is referred to as stored elastic energy (SEE), which is defined by the following equation: SEE=(CT 2 / E)·(T-2DOL)·(1-ν) where E is the Young's modulus of the reinforced substrate, CT is the central tension, T is the average thickness of the reinforced substrate, v is the Poisson's ratio of the reinforced substrate, and DOL is the depth of layer of the first and second compressive stress layers 108, 110. CT is calculated from the compressive stress (CS), depth of layer (DOL), and thickness T according to the following formula: CT=CS*DOL / (T-2*DOL).

[0066] The SEE of the tensile region 112 generally governs the fragmentation behavior of the reinforced substrate upon failure. That is, if the SEE is higher than a certain threshold, the reinforced substrate will break into multiple small pieces when a flaw (e.g., a crack) introduced into the reinforced substrate 102 extends through the DOL of the first or second compressive stress layers 108, 110 into the tensile region 112. As described herein, breaking the reinforced substrate into multiple small pieces is undesirable because the small pieces can clog microelectronics fabrication tools and be difficult to remove, resulting in process downtime, reducing manufacturing efficiency, and increasing manufacturing costs.

[0067] However, if the SEE is below a certain threshold, when a flaw (e.g., a crack) introduced into the reinforced substrate 102 extends through the DOL of the first or second compressive stress layers 108, 110 into the tensile region 112, the reinforced substrate will break into a few (large) pieces. These large pieces can be easily removed from the microelectronics fabrication tool, reducing process downtime and increasing manufacturing efficiency.

[0068] In the embodiments described herein, the SEE of the reinforced substrate 102 is: 17 Joules per square metre (J / m 2 ), the reinforced substrate separates into a small number of (large) pieces when a flaw (e.g., a crack, etc.) introduced into the reinforced substrate extends through the DOL of the first or second compressive stress layer 108, 110 into the tensile region 112. In some embodiments, the SEE of the reinforced substrate is 16.6 J / m 2 or 16.2 J / m 2 In some embodiments, the SEE of the reinforced substrate is: 16 J / m 2 or 15.3 J / m 2 In some embodiments, the SEE of the reinforced substrate is: 14 J / m 2 or 13 J / m 2 The following is the result.

[0069] In the embodiments described herein, the compressive stress layers 108, 110 may be formed on the strengthened substrate 102 by several different processes or combinations thereof. For example, the compressive stress layers 108, 110 may be formed on the strengthened substrate by thermal strengthening, chemical strengthening via ion exchange, and / or lamination of glasses or glass-ceramics having different moduli of elasticity and / or coefficients of thermal expansion (CTE).

[0070] In one specific embodiment, the compressive stress layers 108, 110 are formed through chemical strengthening by ion exchange. To achieve desired stress characteristics (e.g., surface compressive stress, DOL, SEE, etc.), the substrate may be immersed in a molten salt bath containing alkali metal ions to facilitate the exchange of small alkali metal ions in the substrate with large alkali metal ions in the molten salt bath. In an embodiment, the ion exchange process includes placing the substrate in a molten salt bath containing NaNO and KNO. The NaNO concentration in the molten salt bath may be about 2% to about 10% by weight, or about 5% to about 7% by weight. The KNO concentration in the molten salt bath may be about 90% to about 98% by weight, or about 93% to about 95% by weight. The molten salt bath may be maintained at a temperature of 380°C to 460°C, or 400°C to 450°C. The substrate is placed in the molten salt bath for a period of at least 5 hours and not more than 30 hours to achieve the desired stress characteristics, hi embodiments, the substrate is placed in the molten salt bath for a period of at least 6 hours and not more than 15 hours to achieve the desired stress characteristics.

[0071] The CS, central tension, and DOL of the reinforced substrate facilitate singulation of the reinforced substrate with relatively low forces. In particular, the reinforced substrates described herein can be singulated by scribing-breaking techniques using conventional hand-held tools. For example, score lines can be formed in the surface of the reinforced substrate with a scribing force of 30 Newtons (N) or less using a conventional glass cutter, such as a Mitsuboshi glass cutter using a standard Penett® wheel. The score lines are sufficiently deep that the reinforced substrate can be easily singulated along the score lines by applying a bending moment on either side of the score lines. Singulation under these conditions occurs without crack branching, and thus the substrates are smoothly separated along the score lines.

[0072] The retention strength of a reinforced substrate is a measure of the resistance of the substrate to failure under load after being subjected to a mechanical shock, such as the introduction of a scratch. In the embodiments described herein, retention strength refers to the ability of the substrate after being subjected to a mechanical shock to withstand the rigors of the microelectronics fabrication process.

[0073] 4 and 5, a process for determining the retention strength of a substrate, such as a reinforced substrate, is illustrated schematically. In a first step, an indentation 202 (FIG. 5) is formed on the first surface 104 of the reinforced substrate 102 to simulate a mechanical impact, such as a scratch. The indentation 202 is formed using a pyramidal indenter 200 having a surface angle φ of 120°. The indenter 200 is applied to the first surface 104 of the reinforced substrate with an indentation load F, which in the embodiments described herein varies from 1 kilogram force (approximately 10 N) to 4 kilogram force (approximately 39 N). I to simulate different degrees of damage.

[0074] After the indentation 202 is formed on the first surface 104 of the reinforced substrate 102, a bending stress is applied to the reinforced substrate in a four-point bending manner, as shown in FIG. 5 . Specifically, the reinforced substrate 102 is placed on a pair of support pins 204, 206 such that the support pins contact the second surface 106 of the reinforced substrate 102. The support pins 204, 206 are spaced apart by a distance d1. A pair of load pins 208, 210 are then brought into contact with the first surface 104 of the reinforced substrate 102 on either side of the indentation 202. The load pins 208, 210 are positioned within the distance d1 of the support pins 204, 206, but on opposite sides of the reinforced substrate 102 from the support pins 204, 206. The load pins 208, 210 are spaced apart by a distance d2, which is less than the distance d1. A four-point bending load (F 4B ) is applied to the load pins 208, 210 and the load is increased at a set rate until the reinforced substrate breaks (i.e., cracks) at the indentation 202. The four-point bending load at break is determined by the specific indentation load F that created the indentation 202. I The holding strength of the substrate is

[0075] In embodiments described herein, the reinforced substrate has a retained strength of 300 MPa or greater after indentation (using the methods described herein) with an indentation load of 1 kilogram force (about 10 N). In embodiments, the reinforced substrate has a retained strength of 310 MPa or greater, or 320 MPa or greater, after indentation with an indentation load of 1 kilogram force (about 10 N). In some embodiments, the reinforced substrate has a retained strength of 330 MPa or greater, or 340 MPa or greater, after indentation with an indentation load of 1 kilogram force (about 10 N).

[0076] In embodiments described herein, the reinforced substrate has a retained strength of 100 MPa or greater after indentation (using the methods described herein) with an indentation load of 2 kilograms force (about 20 N). In embodiments, the reinforced substrate has a retained strength of 110 MPa or greater, or 115 MPa or greater, after indentation with an indentation load of 2 kilograms force (about 20 N). In some embodiments, the reinforced substrate has a retained strength of 120 MPa or greater, or 130 MPa or greater, after indentation with an indentation load of 2 kilograms force (about 20 N). In some embodiments, the reinforced substrate has a retained strength of 140 MPa or greater, or 150 MPa or greater, after indentation with an indentation load of 2 kilograms force (about 20 N).

[0077] In embodiments described herein, the reinforced substrate has a retained strength of 70 MPa or greater after indentation (using the methods described herein) with an indentation load of 3 kilograms force (about 29 N). In embodiments, the reinforced substrate has a retained strength of 80 MPa or greater, or 90 MPa or greater, after indentation with an indentation load of 3 kilograms force (about 29 N). In some embodiments, the reinforced substrate has a retained strength of 100 MPa or greater, or 110 MPa or greater, after indentation with an indentation load of 3 kilograms force (about 29 N).

[0078] In embodiments described herein, the reinforced substrate has a retained strength of 45 MPa or greater after indentation (using the methods described herein) at an indentation load of 4 kilograms force (approximately 39 N). In embodiments, the reinforced substrate has a retained strength of 50 MPa or greater, or 55 MPa or greater, after indentation at an indentation load of 4 kilograms force (approximately 39 N). In some embodiments, the reinforced substrate has a retained strength of 60 MPa or greater, or 65 MPa or greater, after indentation at an indentation load of 4 kilograms force (approximately 39 N). In some embodiments, the reinforced substrate has a retained strength of 70 MPa or greater, or 80 MPa or greater, after indentation at an indentation load of 4 kilograms force (approximately 39 N).

[0079] As described herein, the reinforced substrate desirably has sufficient holding strength to prevent breakage due to damage (e.g., mechanical impact, etc.) during the microelectronics fabrication process. However, if the reinforced substrate does break, it is desirable for the reinforced substrate to separate into as few main fragments as possible, with the main fragments being as large as possible to prevent clogging of microelectronics fabrication tools and to facilitate easy removal of the pieces from the tools. As used herein, the term "main fragment" refers to the largest fragment resulting from a substrate breakage, excluding smaller chips and particles at or near the surface where the break or crack initiated. In the embodiments described herein, the main fragment has a single-sided area that is at least 1 / 8 of the single-sided area of ​​the substrate prior to fragmentation.

[0080] In the embodiments described herein, a "flat fragmentation factor" is used to describe the fragmentation behavior of a substrate. Specifically, the flat fragmentation factor is the number of main fragments into which the reinforced substrate is separated due to damage (i.e., the number of fragments with a single-sided area equal to or greater than 1 / 8 of the single-sided area of ​​the reinforced substrate prior to fragmentation). The reinforced substrates described herein have a flat fragmentation factor greater than 1 and equal to or less than 5. In embodiments, the reinforced substrate has a flat fragmentation factor equal to or less than 4, or equal to or less than 3. In some embodiments, the reinforced substrate has a flat fragmentation factor of 2.

[0081] Referring now to FIG. 6, the flat fragmentation factor can be determined experimentally. Specifically, FIG. 6 illustrates a process for determining the flat fragmentation factor of a glass or glass-ceramic substrate, such as the tempered substrate 102. The process involves contacting the first surface 104 of the tempered substrate 102 with a fragmentation indenter (such as a sharp carbide tip or other similar indenter) at a flat fragmentation force FFF at the geometric center of the substrate, and then increasing the flat fragmentation force until the substrate breaks. The number of primary fragments (identified by the area of ​​one side of the fragment) is then counted to determine the flat fragmentation factor.

[0082] The reinforced substrate 102 is sufficiently stiff to resist bending due to loads applied to the reinforced substrate 102 during the microelectronics fabrication process. Specifically, the reinforced substrate 102 has a compressive strength of 10 GPa-mm, calculated by the following formula: 3 Having a bending stiffness D greater than or equal to:

[0083]

number

[0084] where E is the elastic modulus of the glass or glass ceramic, t is the average thickness of the reinforced substrate, and ν is the Poisson's ratio of the reinforced substrate. 3 If the bending stiffness D of the reinforced substrate 102 is less than 15 GPa-mm, the reinforced substrate 102 may bend or flex during microelectronic fabrication, potentially causing component misalignment. 3 or above, or 20GPa-mm 3 In some embodiments, the flexural rigidity D of the reinforced substrate is 25 GPa-mm 3 or above 30GPa-mm 3 In some embodiments, the flexural rigidity D of the reinforced substrate is 35 GPa-mm 3 or above, or 40GPa-mm 3In some embodiments, the flexural rigidity D of the reinforced substrate is 45 GPa-mm 3 or above, or 50GPa-mm 3 That's all.

[0085] In embodiments, the tempered substrate 102 of the carrier 100 has an as-built warp of from 0 μm to 500 μm. As used herein, the term "as-built warp" refers to the amount of distortion of the tempered substrate after tempering but before any other materials are deposited on the tempered substrate 102. In some embodiments, the tempered substrate 102 has an as-built warp of from 0 μm to 400 μm, or from 0 μm to 300 μm. In some embodiments, the tempered substrate 102 has an as-built warp of from 0 μm to 200 μm, or from 0 μm to 150 μm. In some embodiments, the tempered substrate 102 has an as-built warp of from 0 μm to 100 μm, or from 0 μm to 50 μm. In the embodiments described herein, as-formed warpage is measured according to the method described in U.S. Pat. No. 9,031,813, entitled "Methods and Apparatus for Estimating Gravity-Free Shapes."

[0086] In embodiments described herein, the reinforced substrate 102 of the carrier 100 has an in-process warpage of 4,000 μm or less to 9,000 μm or more. As used herein, the term "in-process warpage" refers to the amount of distortion of the reinforced substrate 102 during the microelectronics fabrication process as various layers of material, such as layers of dielectric material, layers of metallic material (e.g., copper, silver, etc.), and epoxy molding compounds, are deposited thereon. In-process warpage can be caused, for example, by differences in the thermal expansion coefficients of the reinforced substrate 102 and the various layers deposited thereon, and by differences in thicknesses of the reinforced substrate 102 and the various layers deposited thereon. In-process warpage can also be caused by cure shrinkage of polymer film layers. In embodiments, the reinforced substrate has an in-process warpage of 3,500 μm or less to 8,000 μm or more. In some embodiments, the reinforced substrate has an in-process warp of 3,000 μm or less to 7,000 μm or more. In some embodiments, the reinforced substrate has an in-process warp of 2,000 μm or less to 5,000 μm or more. In some embodiments, the reinforced substrate has an in-process warp of 1,500 μm or less to 4,000 μm or more. In the embodiments described herein, in-process warp is measured according to the method described in U.S. Pat. No. 9,031,813, entitled "Methods and Apparatus for Estimating Gravity-Free Shapes." [Example]

[0087] The embodiments described herein are further illustrated by the following examples. Example 1 The effects of ion-exchange treatment conditions (time, temperature, and bath composition) and sample thickness on storage elastic energy (SEE) were experimentally evaluated for samples with thicknesses of 2.0 mm and 1.8 mm. The samples were formed from an alkali aluminosilicate glass composition containing 69.49 mol% SiO, 8.45 mol% AlO, 14.01 mol% NaO, 1.16 mol% KO, 0.185 mol% SnO, 0.507 mol% CaO, 6.2 mol% MgO, 0.01 mol% ZrO, and 0.008 mol% FeO. The samples were ion-exchanged in a salt bath containing KNO and NaNO at the time and temperature conditions listed in Table 1A.

[0088] [Table 1A]

[0089] The samples were then measured to determine the surface compressive stress (CS), depth of layer (DOL), and depth of compression (DOC), the values ​​of which are reported for each sample in Table 1B. Based on this information, the SEE was calculated according to the following formula: SEE=(CT 2 / E)·(T-2DOL)·(1-ν) where E is the Young's modulus of the glass (71.7 GPa for the sample tested), T is the average thickness of the sample tested, ν is the Poisson's ratio of the glass (0.21 for the sample tested), and DOL is the depth of the compressive stress layer.

[0090] [Table 1B]

[0091] As shown in Table 1B, all of the samples tested 17 J / m 2 Without wishing to be bound by theory, 17 J / m 2A tempered glass or glass-ceramic substrate having an SEE of less than 0.05 exhibits a flat fragmentation factor of 5 or less, which, due to the tempering, provides a tempered substrate that is less susceptible to failure by mechanical impact than an untempered glass or glass-ceramic, but when subjected to a fracture-causing mechanical impact, the fracture is believed to produce fewer primary fragments than an untempered glass or glass-ceramic. Example 2 The spallation behavior of unreinforced and ion-exchange-reinforced substrates was compared. The substrates were made from alkali aluminosilicate glass containing 69.49 mol% SiO2, 8.45 mol% Al2O3, 14.01 mol% Na2O, 1.16 mol% K2O, 0.185 mol% SnO2, 0.507 mol% CaO, 6.2 mol% MgO, 0.01 mol% ZrO2, and 0.008 mol% Fe2O3. The substrates were square in shape, 500 mm long and 500 mm wide (each side had an area of ​​250,000 mm2). 2 The substrates were 1.8 mm thick. One set of substrates was strengthened by ion exchange in a molten salt bath containing 95 wt% KNO and 5 wt% NaNO for 10 hours at a temperature of 450 °C. The other set of substrates was not strengthened.

[0092] The flat fragmentation test was performed as described herein with respect to Figure 6. Specifically, the glass substrate was placed on a stage and an indenter was applied to the surface of the glass substrate at the geometric center of the substrate with an increasing flat fragmentation force F FF The maximum fragmentation force F FF , and the condition of the substrate (i.e., whether it broke or withstood without breaking) are shown in Table 2 below. Photographs were taken of the broken reinforced substrate (line drawing in Figure 7) and the broken unreinforced substrate (line drawing in Figure 8).

[0093] [Table 2]

[0094] As shown in Figure 7, the reinforced substrate fragmented into two main pieces and therefore had a flattening factor of 2. In contrast, the unreinforced substrate (Figure 8) fragmented into four main pieces and therefore had a flattening factor of 4. The experimental results of these tests indicate that the reinforced substrate has a better (i.e., smaller) flattening factor than the unreinforced substrate and therefore is more suitable for use in microelectronics fabrication processes where fragmentation into small numbers is desirable to prevent clogging of fabrication tools.

[0095] Furthermore, as shown in Table 2, the maximum fragmentation force at breakage F for tempered glass samples FF is generally the maximum fragmentation force at failure F for unreinforced specimens. FF The results are lower than those of the previous study. This is believed to be due to the introduction of central tension through ion exchange. Strengthening the glass ultimately introduces compressive stresses and tensile regions that extend to the depth of layer (DOL). The glass within the depth of layer generally withstands the flaw without fracture due to the compressive stresses in the layer. However, if the flaw penetrates into the tensile region, the tensile stress in that region promotes the flaw's propagation through the glass, resulting in the glass breaking (i.e., fragmenting).

[0096] On the other hand, unstrengthened glass substrates have no stress (or have very low compressive / tensile stress compared to tempered glass substrates). Due to the absence of tensile regions, the indenter must penetrate deeper into the glass substrate (compared to tempered glass substrates) to initiate breakage and fragmentation. This deeper penetration of the indenter into the glass surface requires a greater force, and therefore the maximum fragmentation force F for unstrengthened glass substrates is FF becomes larger.

[0097] This phenomenon is advantageous when the reinforced substrate is used as a carrier in microelectronics fabrication processes. Specifically, the reinforced substrate generally has a higher retention strength than an unreinforced substrate (see Example 3). This means that the reinforced substrate can better withstand typical mechanical impacts (e.g., scratches, chips, etc.) during microelectronics fabrication processes without fracture due to compressive stresses at the substrate's surface. However, if the mechanical impact is severe (i.e., the scratch, chip, etc. extends through the layer depth), the tension in the tensile region of the reinforced substrate can cause the reinforced substrate to preferentially fracture and fragment relatively early in the microelectronics fabrication process, where stresses are lower, and the fragments can then be easily removed from the fabrication tool. Failure at this stage of the fabrication process also reduces loss of products laminated to the reinforced substrate and also reduces tool downtime. Example 3 Two sets of alkali aluminosilicate glass samples were experimentally tested to compare the effect of ion exchange on the specimen's retention strength. The glass specimens had a length of 40 mm, a width of 66 mm, and a thickness of 1.8 mm. The first set of specimens was left in the as-received condition (i.e., not strengthened by ion exchange). The second set of specimens was strengthened by ion exchange in a mixed salt bath containing 5 wt.% NaNO3 and 95 wt.% KNO3 for 10 hours at a temperature of 450°C. The ion exchange treatment resulted in a DOL of 73 μm and a surface compressive stress of 540 MPa. Each set of specimens was indented at indentation loads of 1, 2, 3, and 4 kg-f, as shown in Figure 4.

[0098] Each specimen was then loaded in four-point bending as shown in Figure 5. The four-point bending load was applied to the load pin at a rate of 5 mm / min until each specimen failed. The results are shown in Table 3 below and graphed in Figure 9.

[0099] [Table 3]

[0100] As shown graphically in Figure 9, the retention strength of the ion-exchange-reinforced and unreinforced samples generally decreased as the indentation load increased. However, for all indentation load conditions, the retention strength of the ion-exchange-reinforced samples was approximately twice that of the unreinforced samples. This data demonstrates that the ion-exchange-reinforced samples are able to withstand the mechanical shocks of the microelectronics fabrication process without failure, compared to the unreinforced substrate. Example 4 The in-process warpage of tempered substrates used in carriers with thicknesses of 1.0 mm, 1.5 mm, 2.0 mm, and 3 mm was mathematically modeled. The tempered substrates modeled were formed from an alkali aluminosilicate glass substrate containing 66.16 mol% SiO2, 10.29 mol% Al2O3, 14.0 mol% Na2O, 2.45 mol% K2O, 0.6 mol% B2O3, 0.21 mol% SnO2, 0.58 mol% CaO, 5.7 mol% MgO, 0.0105 mol% ZrO2, and 0.0081 mol% Fe2O3. The glass substrate had an elastic modulus of 73.3 GPa and a tensile strength of 9.4 × 10 -6 K -1 The reinforced substrate was modeled with a length of 500 mm and a width of 500 mm.

[0101] The in-process warpage of the reinforced substrate was modeled by adding a metal / dielectric film containing eight alternating layers of copper (four layers with a thickness of 10 μm each) and dielectric material (four layers with a thickness of 30 μm each). Copper has an elastic modulus of 102.1 GPa and a dielectric strength of 16.5 × 10 -6 K -1 The dielectric material was modeled with a CTE of 3.4 GPa below the material's glass transition temperature (330°C), a modulus of 0.0034 GPa above the material's glass transition temperature, and a Poisson's ratio of 35×10 below the material's glass transition temperature. -6 K -1 CTE of 50 × 10 at temperatures above the glass transition temperature of the material -6 K -1The dielectric material was modeled with a CTE of 0.25 and a Poisson's ratio of 0.35. The curing temperature of the dielectric material (375°C) is higher than the glass transition temperature, so the stress-free temperature of the dielectric material was modeled at the glass transition temperature (330°C).

[0102] The in-process warpage of the reinforced substrate with the metal / dielectric film was also modeled by adding a 0.5 mm thick layer of epoxy molding compound on top of the metal / dielectric film. In one model, the first epoxy molding compound (EMC A) had a modulus of elasticity of 22 GPa below the glass transition temperature of the material (165°C), a modulus of elasticity of 0.022 GPa above the glass transition temperature of the material, and a modulus of elasticity of 7.5 × 10 below the glass transition temperature. -6 K -1 CTE of 33 × 10 at temperatures above the glass transition temperature -6 K -1 and a Poisson's ratio of 0.35. In the second model, a second epoxy molding compound (EMC B) was modeled with a modulus of 27 GPa below the glass transition temperature of the material (175°C), a modulus of 0.027 GPa above the glass transition temperature of the material, and a modulus of 7.2 × 10 below the glass transition temperature. -6 K -1 CTE, 30 × 10 at temperatures above the glass transition temperature -6 K -1 The stress-free temperatures of EMC A and EMC B were modeled at the post-mold cure temperature (125°C), since the post-mold cure temperatures of EMC A and EMC B are lower than the glass transition temperatures.

[0103] The warpage of the modeled reinforced substrates (shown in μm on the Y-axis) as a function of glass thickness (shown in mm on the X-axis) is shown graphically in Figure 10. Specifically, Figure 10 shows the warpage of the modeled reinforced substrate with only a metal / dielectric film (identified as "No EMC"), the warpage of the modeled reinforced substrate with a metal / dielectric film and a first epoxy molding compound (identified as "EMC A"), and the warpage of the modeled reinforced substrate with a metal / dielectric film and a second epoxy molding compound (identified as "EMC B").

[0104] As shown in Figure 10, the "no EMC" model had a warpage that was less than zero, specifically, from about -9,000 μm to about -2,000 μm, and the warpage approached zero as the thickness of the reinforced substrate increased. Negative warpage leads to a concave shape in the reinforced substrate. Without wishing to be bound by theory, it is believed that the negative warpage of the "no EMC" model is due to tensile thermal stresses within the dielectric material.

[0105] On the other hand, the "EMC B" model had a warp greater than zero, specifically from about 3,000 μm to about 0 μm, and the warp decreased as the thickness of the reinforced substrate increased. The positive warp is linked to the convex shape of the reinforced substrate. Without wishing to be bound by theory, it is believed that the positive warp of the "EMC B" model is due to compressive thermal stresses from the second epoxy molding compound.

[0106] The "EMC A" model had a warpage that was greater than zero and progressed to less than zero as the glass thickness increased. Specifically, the "EMC A" model had a warpage of approximately 1,000 μm when the glass thickness was 1 mm. This warpage decreased to approximately 0 μm when the glass thickness was 0 mm and further decreased to less than 0 μm when the glass thickness was greater than 1.5 mm. Without wishing to be bound by theory, it is believed that the warpage at glass thicknesses of 1.5 mm or less is due to compressive thermal stress in the first epoxy molding compound. However, as the glass thickness increases, the rigidity of the glass increases, making the effect of the compressive thermal stress in the first epoxy molding compound negligible. As the effect of the compressive thermal stress weakens, tensile thermal stress in the dielectric material causes negative warpage. This negative warpage approaches 0 μm as the glass thickness increases.

[0107] It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments described herein without departing from the spirit and scope of the claimed subject matter. Thus, it is intended that the present specification cover modifications and variations of the various embodiments described herein, provided such modifications and variations come within the scope of the appended claims and their equivalents.

[0108] Preferred embodiments of the present invention will be described below in detail.

[0109] Embodiment 1 In the support (100), a reinforced substrate (102) formed from glass or glass ceramic and having a first surface (104), a second surface (106) opposite the first surface (104), and an average thickness between the first surface (104) and the second surface (106) greater than 1.0 mm and less than or equal to 2.0 mm; Including, The reinforced substrate (102) comprises: 70,000mm 2 The area of ​​one side is equal to or greater than a first compressive stress layer (108) extending inward from the first surface (104) toward the center of the reinforced substrate (102) and having a first depth of 50 μm or more and 150 μm or less; a second compressive stress layer (110) extending inward from the second surface (106) toward the center of the reinforced substrate (102) and having a second depth of at least 50 μm and at most 150 μm; Including, the surface compressive stress at the first surface (104) and the second surface (106) of the reinforced substrate (102) is 200 MPa or more; The reinforced substrate (102) further comprises: Located between the first compressive stress layer (108) and the second compressive stress layer (110), 17 J / m 2 a tensile stress region having a stored elastic energy less than A flat fragmentation factor of 5 or less and A carrier comprising:

[0110] Embodiment 2 2. The carrier (100) of embodiment 1, wherein the surface compressive stress at the first surface (104) and the second surface (106) of the reinforced substrate (102) is 700 MPa or less.

[0111] Embodiment 3 3. The carrier (100) of claim 1 or 2, wherein the surface compressive stress at the first surface (104) and the second surface (106) of the reinforced substrate (102) is 450 MPa or more and 650 MPa or less.

[0112] Embodiment 4 4. The carrier (100) according to any one of the preceding embodiments, wherein the first and second depths of layer are between 60 μm and 100 μm.

[0113] Embodiment 5 The stored elastic energy of the tensile stress region is 16.6 J / m 2 5. A carrier (100) according to any one of embodiments 1 to 4, wherein:

[0114] Embodiment 6 The stored elastic energy of the tensile stress region is 16.2 J / m 2 6. A carrier (100) according to any one of embodiments 1 to 5, wherein:

[0115] Embodiment 7 7. The carrier (100) of any one of the preceding embodiments, wherein the reinforced substrate (102) has a flat fragmentation coefficient of 3 or less.

[0116] Embodiment 8 8. The carrier (100) according to any one of the preceding embodiments, wherein the first surface (104) has a surface roughness Ra of 1 μm or less.

[0117] Embodiment 9 9. The carrier (100) according to any one of the preceding embodiments, wherein the reinforced substrate (102) has a transmittance of 50% or more for light wavelengths of 300 nm or more and 355 nm or less.

[0118] Embodiment 10 10. The carrier (100) according to any one of the preceding embodiments, wherein the reinforced substrate (102) has a transmittance of 70% or more for light wavelengths of 300 nm or more and 355 nm or less.

[0119] Embodiment 11 The reinforced substrate (102) has a strength of 10 GPa-mm 3 The carrier (100) according to any one of embodiments 1 to 10, having a bending rigidity of at least 10.

[0120] Embodiment 12 12. The carrier (100) of any one of embodiments 1 to 11, wherein the reinforced substrate (102) has a retention strength of 300 MPa or more after indentation (202) with an indentation load of 1 kilogram force (approximately 10 N).

[0121] Embodiment 13 13. The carrier (100) of any one of embodiments 1 to 12, wherein the reinforced substrate (102) has a retention strength of 100 MPa or more after indentation (202) with an indentation load of 2 kilograms force (approximately 20 N).

[0122] Embodiment 14 14. The carrier (100) of any one of embodiments 1 to 13, wherein the reinforced substrate (102) has a retention strength of 70 MPa or more after indentation (202) with an indentation load of 3 kilograms force (approximately 29 N).

[0123] Embodiment 15 15. The carrier (100) of any one of embodiments 1 to 14, wherein the reinforced substrate (102) has a retention strength of 45 MPa or more after indentation (202) with an indentation load of 4 kilograms force (approximately 39 N).

[0124] Embodiment 16 16. The carrier (100) of any one of the preceding embodiments, wherein the reinforced substrate (102) has an average thickness of 1.8 mm or less.

[0125] Embodiment 17 17. The carrier (100) of any one of the preceding embodiments, wherein the reinforced substrate (102) has an average thickness of 1.5 mm or less.

[0126] Embodiment 18 18. The carrier (100) of any one of the preceding embodiments, wherein the reinforced substrate (102) has an average thickness of 1.1 mm or less.

[0127] Embodiment 19 19. The carrier (100) according to any one of the preceding embodiments, wherein the reinforced substrate (102) is an ion-exchange reinforced substrate (102).

[0128] Embodiment 20 The reinforced substrate (102) exhibits an average of 9×10 -6 K -1 20. The carrier (100) according to any one of the preceding embodiments, having a thermal expansion coefficient equal to or greater than 1000 kJ / cm.

[0129] Embodiment 21 21. The carrier (100) of any one of the preceding embodiments, wherein the reinforced substrate (102) comprises an alkali aluminosilicate glass.

[0130] Embodiment 22 22. The carrier (100) according to any one of the preceding embodiments, wherein the reinforced substrate (102) has an in-process (10) warpage of 4,000 μm or less to 9,000 μm or more.

[0131] Embodiment 23 23. The carrier (100) of any one of embodiments 1 to 22, wherein the reinforced substrate (102) has an as-formed warp of 0 μm to 500 μm.

[0132] Embodiment 24 In a method for forming a support (100), immersing the glass or glass-ceramic substrate in a molten salt bath containing a mixture of about 90% to about 98% by weight potassium nitrate and about 2% to about 10% by weight sodium nitrate at a temperature of 380°C to 460°C for a period of 5 to 30 hours; Including, The glass or glass ceramic substrate has a first surface (104), a second surface (106) opposite the first surface (104), and a 2 and an average thickness between the first surface (104) and the second surface (106) of greater than 1.0 mm and less than or equal to 2.0 mm.

[0133] Embodiment 25 25. The method of embodiment 24, wherein the molten salt bath comprises a mixture of about 93% to about 95% by weight potassium nitrate and about 5% to about 7% by weight sodium nitrate.

[0134] Embodiment 26 26. The method of claim 24 or 25, wherein the glass or glass-ceramic substrate is immersed in the molten salt bath at a temperature of about 450° C. for a period of at least 6 hours and not more than about 15 hours.

[0135] Embodiment 27 After the glass or glass-ceramic substrate is immersed in the molten salt bath, the glass or glass-ceramic substrate is a first compressive stress layer (108) extending inward from the first surface (104) toward the center of the glass or glass-ceramic substrate and having a first depth of at least 50 μm and at most 150 μm; a second compressive stress layer (110) extending inward from the second surface (106) toward the center of the glass or glass-ceramic substrate and having a second depth of at least 50 μm and at most 150 μm; Including, the surface compressive stress at the first surface (104) and the second surface (106) of the glass or glass-ceramic substrate is 200 MPa or more; The glass or glass-ceramic substrate may further comprise: Located between the first compressive stress layer (108) and the second compressive stress layer (110), 40J / m 2 a tensile stress region having a stored elastic energy less than A flat fragmentation factor of 5 or less and 27. The method of any one of embodiments 24 to 26, comprising: [Explanation of symbols]

[0136] 34, 100 carriers 102 Reinforced base material 108 First stress compression layer 110 Second stress compression layer 112 Tensile Region 200, 300 indenter 204, 206 Support pin 208, 210 Load pin

Claims

1. In the support (100), a reinforced substrate (102) formed from glass or glass ceramic and having a first surface (104), a second surface (106) opposite the first surface (104), and an average thickness between the first surface (104) and the second surface (106) greater than 1.0 mm and not greater than 2.0 mm; Including, The reinforced substrate (102) comprises: 70,000 mm ２ The area of ​​one side is equal to or greater than a first compressive stress layer (108) extending inward from the first surface (104) toward the center of the reinforced substrate (102) and having a first depth of layer of at least 50 μm and at most 150 μm; a second compressive stress layer (110) extending inward from the second surface (106) toward the center of the reinforced substrate (102) and having a second depth of layer of at least 50 μm and at most 150 μm; Including, a surface compressive stress at the first surface (104) and the second surface (106) of the reinforced substrate (102) is 200 MPa or greater; The reinforced substrate (102) further comprises: 17 J / m between the first compressive stress layer (108) and the second compressive stress layer (110) ２ a tensile stress region having a stored elastic energy less than A flat fragmentation factor of 5 or less and A carrier comprising:

2. a surface compressive stress at the first surface (104) and the second surface (106) of the reinforced substrate (102) is 700 MPa or less; The carrier (100) of claim 1, wherein the first depth of layer and the second depth of layer are greater than or equal to 60 μm and less than or equal to 100 μm.

3. The stored elastic energy of the tensile stress region is 15.3 J / m ２ 3. The carrier (100) of claim 1 or 2, wherein:

4. The carrier (100) of any one of claims 1 to 3, wherein the reinforced substrate (102) has a flat fragmentation factor of 3 or less.

5. The carrier (100) according to any one of claims 1 to 4, wherein the first surface (104) has a surface roughness Ra of 1 μm or less.

6. The carrier (100) according to any one of claims 1 to 5, wherein the reinforced substrate (102) has a transmittance of 50% or more for light wavelengths of 300 nm or more and 355 nm or less.

7. The reinforced substrate (102) has a modulus of 10 GPa-mm ３ The support (100) according to any one of claims 1 to 6, having a bending stiffness of at least 100 mm.

8. 8. The carrier (100) of claim 1, wherein the reinforced substrate (102) has a retention strength of 300 MPa or greater after indentation (202) with an indentation load of 1 kilogram force (approximately 10 N).

9. 9. The carrier (100) of claim 1, wherein the reinforced substrate (102) has a retention strength of 45 MPa or greater after indentation (202) with an indentation load of 4 kilograms force (approximately 39 N).

10. The reinforced substrate (102) has an in-process (10) warpage of 4,000 μm or less to 9,000 μm or more; The carrier (100) of any one of claims 1 to 9, wherein the reinforced substrate (102) has an as-formed camber of 0 to 500 microns.

11. The storage elastic energy is 16.6 J / m ２ The carrier of claim 1, wherein the carrier is less than 10 ...

12. The storage elastic energy is 16.2 J / m ２ The carrier of claim 1, wherein the carrier is less than 10 ...

13. The storage elastic energy is 15 J / m ２ The carrier of claim 1, wherein the carrier is less than 10 ...

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