Electrical connection member and semiconductor device

Abstract

To provide an electric connection member which makes a thickness of a conductive joint material less likely to be uneven.SOLUTION: A plate-like electric connection member 110 is used to connect an electrode of a semiconductor element having the electrode with a wiring pattern and includes: a semiconductor connection area 118 connected to the electrode of the semiconductor element through a conductive joint material; a semiconductor non-contact area 120 which is not connected to the electrode of the semiconductor element; and a wiring pattern connection area 122 connected to the wiring pattern. The semiconductor connection area 118 is formed with multiple projections 112. A first through hole 114 is formed between the two adjacent projections 112 of the multiple projections 112.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an electrical connection member and a semiconductor device. [Background technology]

[0002] With the advent of next-generation power semiconductors (GaN, etc.), there is a demand to speed up switching operations from the conventional hundreds of kHz to the order of several MHz, and to speed up turn-on / off speeds by an order of magnitude or more. In addition, there is a demand to ensure operational stability and reliability by reducing switching losses, surge voltages, and noise during circuit system operation.

[0003] Therefore, conventionally, a plate-shaped electrical connection member that can achieve low inductance has been used as an electrical connection member for connecting a semiconductor element to a wiring pattern. This plate-shaped electrical connection member is connected to the semiconductor element via a conductive bonding material.

[0004] Patent Document 1 discloses a semiconductor device in which a metal oxide film is formed in an intermediate portion of the underside between a first bonding portion and a second bonding portion of an electrical connection member so as to prevent a conductive bonding material such as solder from leaking and spreading from between the first bonding portion and an upper electrode of a semiconductor element to the intermediate portion. The semiconductor device described in Patent Document 1 can prevent the conductive bonding material from leaking and spreading to the electrical connection member, thereby improving the reliability of the semiconductor device. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2019-220653 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the above-mentioned conventional technology, the conductive adhesive is applied to the entire surface of the semiconductor element, and the semiconductor element and the electrical connection member are connected by reflowing the adhesive while the electrical connection member is in place, which causes the semiconductor element and the electrical connection member to be joined at an angle, resulting in a problem that the thickness of the conductive adhesive may be uneven, which may reduce the reliability of the manufactured semiconductor device.

[0007] The present invention has been made to solve the above-mentioned problems, and aims to provide an electrical connection member in which the thickness of the conductive bonding material is less likely to become uneven, and a semiconductor device in which a decrease in reliability is suppressed. [Means for solving the problem]

[0008] (1) The electrical connection member of the present invention is a plate-shaped electrical connection member used to connect an electrode of a semiconductor element having an electrode to a wiring pattern, and has a semiconductor connection region connected to the electrode of the semiconductor element via a conductive bonding material, a semiconductor non-connection region not connected to the electrode of the semiconductor element, and a wiring pattern connection region connected to the wiring pattern, The semiconductor connection region has a plurality of protrusions formed therein, and a first through hole is formed between two adjacent protrusions among the plurality of protrusions.

[0009] (2) In the electrical connection member of the present invention, it is preferable that the semiconductor element is a semiconductor element having a plurality of electrodes on one surface, and the electrical connection member is used to connect the plurality of electrodes to the wiring pattern.

[0010] (3) In the electrical connection member of the present invention, it is preferable that the semiconductor element is a semiconductor element having multiple types of electrodes on one surface, and the electrical connection member is used to connect one type of electrode among the multiple types of electrodes to the wiring pattern.

[0011] (4) In the electrical connection member of the present invention, it is preferable that the one type of electrode is divided into a plurality of individual electrodes, and that the plurality of protrusions are formed in regions corresponding to the plurality of individual electrodes, respectively.

[0012] (5) In the electrical connection member of the present invention, the area (planar area) of the first through hole is preferably smaller than the area (planar area) of the protrusion.

[0013] (6) In the electrical connection member of the present invention, the protrusion preferably has a conical or pyramidal shape.

[0014] (7) In the electrical connection member of the present invention, it is preferable that a second through hole is formed in the semiconductor non-connection region.

[0015] (8) The semiconductor device of the present invention is a semiconductor device comprising a semiconductor element having electrodes, a wiring pattern, and a plate-shaped electrical connection member that connects the electrodes of the semiconductor element and the wiring pattern, wherein the electrical connection member is the electrical connection member of the present invention. [Effects of the Invention]

[0016] According to the electrical connection member of the present invention, since a plurality of protrusions are formed in the semiconductor connection region, the semiconductor element and the electrical connection member are prevented from being joined in an inclined state, and the thickness of the conductive bonding material is made uniform. Furthermore, by applying the conductive bonding material to positions corresponding to the formation positions of the plurality of protrusions, unnecessary application of the conductive bonding material can be prevented. Furthermore, according to the electrical connection member of the present invention, since a first through hole is formed between two adjacent protrusions, the flow of the molten conductive bonding material is interrupted, making it easier to control the flow of the conductive bonding material and preventing the conductive bonding material from spreading more than necessary. As a result, the electrical connection member of the present invention can prevent a decrease in reliability of the manufactured semiconductor device, and the semiconductor device of the present invention is a semiconductor device in which a decrease in reliability is suppressed. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a perspective view of an electrical connection member 110 of the present invention. [Figure 2] FIG. 1 is a plan view of a semiconductor element 102 to which an electrical connection member 110 of the present invention is to be connected. [Figure 3] FIG. 1 is a diagram showing a state in which an electrical connection member 110 of the present invention is connected to an electrode 104 of a semiconductor element 102. [Figure 4] FIG. 1 is a diagram showing an equivalent circuit 126 of an electronic module 130 according to an embodiment. [Figure 5] 2 is a diagram showing the electrode structure of semiconductor elements (first semiconductor element 10, second semiconductor element 20) used in the embodiment. FIG. [Figure 6] 1 is an enlarged perspective view of a main part of an electronic module 130 according to an embodiment. [Figure 7] 10 is an enlarged perspective view of a main part of an electronic module 132 according to a first modified example. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0018] The electrical connection member and semiconductor device of the present invention will be described below with reference to the drawings. Note that the drawings are schematic diagrams and do not necessarily reflect the actual dimensions. Furthermore, the embodiments described below do not limit the invention according to the claims. Furthermore, not all of the elements and combinations thereof described in each embodiment are necessarily essential to the solution of the present invention. Furthermore, in each embodiment, the same reference numerals are used across embodiments for configurations and elements that have the same basic configuration, features, functions, etc. (including components that are not completely identical in shape, etc.), and repeated description may be omitted.

[0019] [Electrical connection members and semiconductor devices] FIG. 1 is a perspective view of an electrical connection member 110 of the present invention. FIG. 2 is a plan view of a semiconductor element 102 to which the electrical connection member 110 of the present invention is to be connected. FIG. 3 is a diagram showing a state in which the electrical connection member 110 of the present invention is connected to an electrode 104 of the semiconductor element 102. FIG. 3(A) is a perspective view showing this state, and FIGS. 3(B) and 3(C) are cross-sectional views of the main part showing this state. FIG. 3(B) is a cross-sectional view of the main part before the bonding step, and FIG. 3(C) is a cross-sectional view of the main part after the bonding step.

[0020] 1 to 3, the electrical connection member 110 of the present invention is a plate-shaped electrical connection member used to connect the electrodes 104 of a semiconductor element 102 having the electrodes 104 to a wiring pattern (see a first wiring pattern 41 in FIG. 6 described later). As shown in FIGS. 1 and 2, the electrical connection member 110 has a semiconductor connection region 118 connected to the electrodes 104 of the semiconductor element 102 via a conductive bonding material 124, a semiconductor non-connection region 120 not connected to the electrodes 104 of the semiconductor element 102, and a wiring pattern connection region 122 connected to the wiring pattern. A plurality of protrusions 112 are formed in the semiconductor connection region 118, and a first through-hole 114 is formed between two adjacent protrusions 112 (the semiconductor non-connection region) among the plurality of protrusions 112.

[0021] In the electrical connection member 110 of the present invention, the semiconductor element 102 is a semiconductor element having a plurality of electrodes (individual electrodes 104a, 104b, 104c) on one surface, as shown in FIG. 2, and the electrical connection member 110 is used to connect the plurality of electrodes (individual electrodes 104a, 104b, 104c) to a wiring pattern.

[0022] Furthermore, in the electrical connection member 110 of the present invention, the semiconductor element 102 is a semiconductor element having multiple types of electrodes (electrode 104 and other electrodes 106) on one surface, as shown in FIG. 2, and the electrical connection member 110 is used to connect one type of electrode (electrode 104) of the multiple types of electrodes (electrode 104 and other electrodes 106) to a wiring pattern.

[0023] In the electrical connection member 110 of the present invention, one type of electrode (electrode 104) in the semiconductor element 102 is divided into a plurality of individual electrodes 104a, 104b, and 104c as shown in Fig. 2, and the plurality of protrusions 112a, 112b, and 112c (see Fig. 1) in the electrical connection element 110 are formed in regions corresponding to the plurality of individual electrodes 104a, 104b, and 104c (see Figs. 2 and 3). In the present invention, one protrusion 112 may be formed in a region corresponding to each of the individual electrodes 104a, 104b, and 104c (see Fig. 1), or a plurality of protrusions 112 may be formed in a region corresponding to each of the individual electrodes 104a, 104b, and 104c.

[0024] In addition, in the electrical connection member 110 of the present invention, the area (planar area) of the first through hole 114 is smaller than the area (planar area) of the protrusion 112, as shown in Fig. 1. In addition, in the electrical connection member 110 of the present invention, the protrusion 112 has a conical shape, as shown in Fig. 1. Note that in the present invention, the protrusion 112 is not limited to one having a conical shape, and may have a pyramidal shape, a cylindrical shape, a prismatic shape, a hemispherical shape, or other shapes.

[0025] 1 and 3, in the electrical connection member 110 of the present invention, a second through hole 116 is formed in the semiconductor non-connection region 120. The second through hole 116 is arranged on a vertical line extending from the central protrusion 112 (protrusion 112b) toward the wiring pattern connection region 122.

[0026] 3(A), a protective insulating layer 108 is formed on all or part of the semiconductor non-connection region 120. The protective insulating layer 108 may be a resist layer, a metal oxide layer, or the like.

[0027] As shown in Fig. 3(A), the semiconductor device of the present invention is a semiconductor device comprising a semiconductor element 102 having electrodes 104, a wiring pattern (not shown), and a plate-like electrical connecting member 110 that connects the electrodes 104 of the semiconductor element 102 to the wiring pattern. In Fig. 3(A), reference numeral 106 denotes another electrode.

[0028] The electrical connection member 110 of the present invention is connected to the semiconductor element 102 as follows. That is, after applying a conductive bonding material 124 to the electrodes 104 of the semiconductor element 102, the electrical connection member 110 is mounted so that the protrusions 112 (protrusions 112a, 112b, 112c) (see FIG. 1) of the electrical connection member 110 face the electrodes 104 (individual electrodes 104a, 104b, 104c) (see FIG. 2). Thereafter, the conductive bonding material 124 is melted by reflow or the like, thereby connecting the electrical connection member 110 to the electrodes 104 of the semiconductor element 102 (see FIGS. 3(B) to 3(C)). The wiring pattern connection region 122 is connected to a wiring pattern on a substrate (not shown) via the conductive bonding material.

[0029] [Effects of the Electrical Connection Member and Semiconductor Device] According to the electrical connection member 110 of the present invention, the semiconductor connection region 118 is formed with a plurality of protrusions 112, which prevents the semiconductor element 102 and the electrical connection member 110 from being bonded in an inclined state, and the thickness of the conductive bonding material 124 is uniform. Furthermore, by applying the conductive bonding material 124 to positions corresponding to the positions of the plurality of protrusions 112, it is possible to prevent unnecessary application of the conductive bonding material 124. Furthermore, according to the electrical connection member 110 of the present invention, the first through-holes 114 are formed between two adjacent protrusions 112, which divides the flow of the molten conductive bonding material 124, making it easier to control the flow of the conductive bonding material 124 and preventing the conductive bonding material 124 from spreading more than necessary. As a result, it is possible to prevent a decrease in reliability of the manufactured semiconductor device, and the semiconductor device of the present invention is a semiconductor device in which a decrease in reliability is suppressed.

[0030] Furthermore, as described above, the electrical connection member 110 of the present invention can prevent the conductive bonding material 124 from wetting and spreading more than necessary, so that the conductive bonding material 124 will not spread to the semiconductor non-bonded region 120 or other electrodes 106.

[0031] Furthermore, according to the electrical connection member 110 of the present invention, the conductive bonding material 124 is applied to positions corresponding to the formation positions of the multiple protrusions 112, which further prevents the reliability of the semiconductor device from decreasing.

[0032] In the electrical connection member 110 of the present invention, the area (planar area) of the first through-hole 114 is smaller than the area (planar area) of the protrusion 112, and therefore the parasitic inductance can be reduced accordingly.

[0033] According to the electrical connection member 110 of the present invention, since the protrusions 112 have a conical shape, it is possible to increase the amount of conductive bonding material 124 on the tip side of the protrusions 112, and it is possible to position the conductive bonding material 124 evenly and reliably around the protrusions 112. Therefore, it is possible to ensure the thickness of the conductive bonding material 124 while making the thickness of the conductive bonding material 124 uniform. Furthermore, according to the electrical connection member 110 of the present invention, since the protrusions 112 have a conical shape, it is possible to ensure the thickness of the conductive bonding material 124 while making the thickness uniform, and it is possible to suppress the occurrence of defects such as cracks in the conductive bonding material 124 after it has hardened.

[0034] Furthermore, according to the electrical connection member 110 of the present invention, since the second through hole 116 is formed in the semiconductor non-connection region 120, the conductive bonding material 124 does not spread more than necessary from the semiconductor connection region 118 toward the wiring pattern connection region 122, and short circuits between the end face of the semiconductor element 102 and the electrical connection member 110 are not caused.

[0035] Furthermore, according to the electrical connection member 110 of the present invention, a protective insulating layer 108 is formed on all or part of the area corresponding to the semiconductor non-connection area 120 in the semiconductor element 102, so that the conductive bonding material 124 does not wet and spread toward the semiconductor non-connection area 120.

[0036] The semiconductor device of the present invention is a semiconductor device comprising a semiconductor element 102 having electrodes 104, a wiring pattern (not shown), and a plate-shaped electrical connection member 110 that connects the electrodes 104 of the semiconductor element 102 to the wiring pattern, and therefore is a semiconductor device in which a decrease in reliability is suppressed.

[0037] The electrical connection member 110 of the present invention is a plate-shaped electrical connection member that has a larger bonding area and smaller parasitic inductance than electrical connection members such as wires, and therefore has a particularly significant effect when applied to a semiconductor device that uses a semiconductor element made of a next-generation power semiconductor (a semiconductor made of gallium nitride, silicon carbide, or gallium oxide).In the following embodiments, the electrical connection member and semiconductor device of the present invention will be described using an electronic module that uses a semiconductor element made of a next-generation power semiconductor (GaN) as such a semiconductor device.

[0038] [Example of semiconductor device configuration] Fig. 4 is a diagram showing an equivalent circuit 126 of an electronic module 130 according to an embodiment. Fig. 5 is a diagram showing the electrode structure of semiconductor elements (first semiconductor element 10, second semiconductor element 20) used in the embodiment. Fig. 5(A) is a diagram showing the electrode structure of the first semiconductor element 10, and Fig. 5(B) is a diagram showing the electrode structure of the second semiconductor element 20. Fig. 6 is an enlarged perspective view of a main part of the electronic module 130 according to an embodiment.

[0039] As shown in FIG. 4, the drain electrode 11d of the first semiconductor element 10 is connected to a power supply terminal 70 via a third wiring pattern 43. The source electrode 12s of the first semiconductor element 10 is connected to the drain electrode 21d of the second semiconductor element 20 and the first wiring pattern 41, and is connected to an output terminal 72 via the first wiring pattern 41. The source electrode 22s of the second semiconductor element 20 is connected to a ground terminal 74 via a second wiring pattern 42. The capacitor 30 is connected to the power supply terminal 70 and the ground terminal 74 via the third wiring pattern 43 and the second wiring pattern 42. A circuit is formed in which the capacitor 30 is connected in parallel to the first semiconductor element 10 and the second semiconductor element 20, which are connected in series. A detection source electrode 12sb and a detection source electrode 22sb are also provided.

[0040] The first semiconductor element 10 and the second semiconductor element 20 are both MOS transistors. As shown in FIG. 5, a first drain electrode 11d and a second drain electrode 21d are arranged on one side of the same surface of each of the first semiconductor element 10 and the second semiconductor element 20, and a first source electrode 12s and a second source electrode 22s are arranged on the other side. As shown in FIG. 5(A), the first drain electrode 11d is composed of three individual electrodes 11d1, 11d2, and 11d3. As shown in FIG. 5(B), the second drain electrode 21d is composed of three individual electrodes 21d1, 21d2, and 21d3. As shown in FIG. 5(A), the first source electrode 12s is composed of three individual electrodes 12s1, 12s2, and 12s3. As shown in FIG. 5(B), the source electrode 22s is composed of three individual electrodes 22s1, 22s2, and 22s3. In Fig. 5(A), reference numeral 13g denotes a first gate electrode, and reference numeral 12sb denotes a first detection source electrode 12sb. In Fig. 5(B), reference numeral 23g denotes a second gate electrode, and reference numeral 22sb denotes a second detection source electrode.

[0041] In the electronic module 130 according to the embodiment, as shown in FIG. 6, the electrical connection member 110 is connected to the semiconductor element 100 such that the protrusions 112 are disposed at the positions of the drain electrodes 11d1, 11d2, 11d3, 21d1, 21d2, and 21d3, and the protrusions 112 are disposed at the positions of the source electrodes 12s1, 12s2, 12s3, 22s1, 22s2, and 22s3.

[0042] The electronic module 130 according to the embodiment is a resin-sealed electronic module, and as shown in FIG. 6, includes a substrate 40 having a first wiring pattern 41, a second wiring pattern 42, and a third wiring pattern 43, a first semiconductor element 10 having a plurality of first electrodes (a first drain electrode 11d, a first source electrode 12s (not shown), a first detection source electrode 12sb, and a first gate electrode 13g), a second semiconductor element 20 having a plurality of second electrodes (a second drain electrode 21d (not shown), a second source electrode 22s, a second detection source electrode 22sb, and a second gate electrode 23g), a capacitor 30, and the substrate 40.

[0043] The first wiring pattern 41 has the first semiconductor element 10 mounted thereon, and is connected to a first source electrode 12s by a first electrical connection member 51, and to a second drain electrode 21d by a fourth electrical connection member 54. The second wiring pattern 42 has the second semiconductor element 20 mounted thereon, and is connected to a second source electrode 22s by a second electrical connection member 52, and is connected to a part 31 of the capacitor 30. The third wiring pattern 43 has the first drain electrode 11d connected thereon by a third electrical connection member 53, and is connected to another part 32 of the capacitor 30. The substrate 40 may be, for example, a DCB substrate in which a copper circuit plate is directly bonded to a ceramic substrate.

[0044] In the electronic module 130 according to the embodiment, as shown in FIG. 6, the second electrical connection member 52 and the third electrical connection member 53 use linear electrical connection members, while the first electrical connection member 51 and the fourth electrical connection member 54 use plate-shaped electrical connection members (electrical connection member 110 of the present invention).

[0045] 6, the electrical connection member 110 serving as the first electrical connection member 51 has a width that covers the three first source electrodes 12s (12s1, 12s2, 12s3) and connects the first source electrodes 12s (12s1, 12s2, 12s3) to the first wiring pattern 41. The electrical connection member 110 serving as the fourth electrical connection member 54 has a width that covers the three second drain electrodes 21d (21d1, 21d2, 21d3) and connects the second drain electrodes 21d (21d1, 21d2, 21d3) to the first wiring pattern 41.

[0046] The first electrical connection member 51 and the fourth electrical connection member 54 are made of the electrical connection member 110 of the present invention (i.e., an electrical connection member 110 having a semiconductor connection region 118, a semiconductor non-connection region 120, and a wiring pattern connection region 122, in which a plurality of protrusions 112 are formed in the semiconductor connection region 118, and a first through hole 114 is formed between two adjacent protrusions of the plurality of protrusions 112) (see Figure 1).

[0047] As described above, in the electronic module 130 according to the embodiment (corresponding to a semiconductor device of the present invention), the first electrical connection member 51 and the fourth electrical connection member 54 are formed using the electrical connection member 110 of the present invention. This prevents the semiconductor elements (first semiconductor element 10, second semiconductor element 20) and the electrical connection members (first electrical connection member 51, fourth electrical connection member 54) from being joined in an inclined state, resulting in a uniform thickness of the conductive bonding material. Furthermore, by applying the conductive bonding material to positions corresponding to the formation positions of the multiple protrusions, unnecessary application of the conductive bonding material can be prevented. Furthermore, since the first through-holes are formed between two adjacent protrusions, the flow of the molten conductive bonding material is interrupted, making it easier to control the flow of the conductive bonding material and preventing the conductive bonding material from spreading more than necessary. As a result, the electronic module 130 according to the embodiment (corresponding to a semiconductor device of the present invention) is a semiconductor device in which a decrease in reliability is suppressed.

[0048] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications and applications are possible within the scope of the gist of the present invention.

[0049] (1) Fig. 7 is an enlarged perspective view of a main part of an electronic module 132 according to Modification 1. As shown in Fig. 7, the electronic module 132 according to Modification 1 uses plate-shaped second electrical connection members 52 and plate-shaped third electrical connection members 53 (i.e., the electrical connection members 110 of the present invention) instead of the linear second electrical connection members 52 and third third electrical connection members 53 in the electronic module 130 according to the embodiment. An electronic module (electronic module 132) having such a structure still has the same effects as the semiconductor device of the present invention.

[0050] (2) In the above-described embodiment, the electrical connection member of the present invention was described using a semiconductor element having a plurality of individual drain electrodes and a plurality of individual source electrodes on one surface, but the present invention is not limited to this. The present invention can also be applied to a semiconductor element having a drain electrode in which each individual drain electrode is partially connected, or a semiconductor element having a source electrode in which each individual source electrode is partially connected. The present invention can also be applied to a semiconductor element in which the drain electrodes and source electrodes have a complex structure.

[0051] (3) In the above-described embodiment, a wiring pattern formed on a substrate is used as the wiring pattern connected to the electrodes of the semiconductor element, but the present invention is not limited to this. The present invention can also use wiring patterns other than wiring patterns formed on a substrate (for example, lead frames, bulk wiring patterns, etc.).

[0052] (4) In the above-described embodiment, the semiconductor device of the present invention has been described using a half-bridge circuit, but the present invention is not limited to this. The present invention can also be applied to a totem-pole power factor correction circuit or other circuits. [Explanation of symbols]

[0053] 102 Semiconductor elements 104 Electrode 104a,104b,104c Individual electrode 106 Other electrodes 108 Protective insulation layer 110 Electrical connection members 112 Protrusion 114 First through hole 116 Second through hole 118 Semiconductor Connection Area 120 Semiconductor non-connected area 122 Wiring pattern connection area 126 Equivalent Circuit 10 First semiconductor element 11d, 11d1, 11d2, 11d3: first drain electrode 12s, 12s1, 12s2, 12s3 First source electrode 12sb First detection source electrode 13g First gate electrode 20 second semiconductor element 21d, 21d1, 21d2, 21d3 Second drain electrode 22s, 22s1, 22s2, 22s3 Second source electrode 22sb Second detection source electrode 23g Second gate electrode 30 capacitors 31 Part of a capacitor 32 Other parts of the capacitor 40 boards 41 First wiring pattern (wiring pattern) 42 Second wiring pattern (wiring pattern) 43 Third wiring pattern (wiring pattern) 51 First electrical connection member (electrical connection member) 52 Second electrical connection member (electrical connection member) 53 Third electrical connection member (electrical connection member) 54 Fourth electrical connection member (electrical connection member) 70 Power terminal 72 Output terminal 74 Ground terminal 130,132 Electronic Module

Claims

1. A plate-shaped electrical connecting member used to connect electrodes of a semiconductor element having electrodes to a wiring pattern, a semiconductor connection region connected to the electrode of the semiconductor element via a conductive bonding material, a semiconductor non-connection region not connected to the electrode of the semiconductor element, and a wiring pattern connection region connected to the wiring pattern, a plurality of protrusions are formed in the semiconductor connection region; a first through hole is formed between two adjacent protrusions among the plurality of protrusions; The electrical connection member is characterized in that a second through hole is formed in the semiconductor non-connection region.

2. the semiconductor element is a semiconductor element having a plurality of electrodes on one surface, 2. The electrical connection member according to claim 1, wherein the electrical connection member is used to connect the plurality of electrodes and the wiring pattern.

3. the semiconductor element is a semiconductor element having a plurality of types of electrodes on one surface, 2. The electrical connection member according to claim 1, wherein the electrical connection member is used to connect one type of electrode out of the plurality of types of electrodes to the wiring pattern.

4. the one type of electrode is divided into a plurality of individual electrodes, 4. The electrical connection member according to claim 3, wherein each of the plurality of protrusions is formed in a corresponding area of ​​each of the plurality of individual electrodes.

5. 5. The electrical connection member according to claim 1, wherein the area (planar area) of the first through hole is smaller than the area (planar area) of the protrusion.

6. 6. The electrical connection member according to claim 1, wherein the projection has a conical, pyramidal, cylindrical, prismatic or hemispherical shape.

7. A plate-shaped electrical connection member used to connect electrodes of a semiconductor element having electrodes to a wiring pattern, a semiconductor connection region connected to the electrode of the semiconductor element via a conductive bonding material, a semiconductor non-connection region not connected to the electrode of the semiconductor element, and a wiring pattern connection region connected to the wiring pattern, a plurality of protrusions are formed in the semiconductor connection region; a first through hole is formed between two adjacent protrusions among the plurality of protrusions; An electrical connection member, wherein the area (planar area) of the first through hole is smaller than the area (planar area) of the protrusion.

8. a semiconductor element having an electrode; The wiring pattern, A semiconductor device comprising a plate-shaped electrical connection member that connects the electrodes of the semiconductor element and the wiring pattern, 8. A semiconductor device, wherein the electrical connection member is the electrical connection member according to claim 1.

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