Substrate Processing Equipment

Abstract

To provide a substrate processing apparatus capable of improving a uniformity of a processing rate in a surface of a substrate.SOLUTION: A substrate processing apparatus 1 comprises: a holding part 10 that holds a substrate W, and makes the substrate to be rotated; a processing liquid supply part 21 that supplies a first processing liquid and a second processing liquid of which a temperature is lower than that of the first processing liquid to the substrate W; an annular-shaped ring member 31 including an inner peripheral edge having a shape along an outer peripheral edge of the substrate W, and integrally formed over a whole periphery, and includes a flow channel 33 in which a liquid flows to their peripheral direction; and a liquid supply part 34 that supplies the liquid to the flow channel 33. The liquid supply part 34 adjusts a temperature of the ring member 31 to a predetermined temperature set to be lower than the temperature of the first processing liquid and to be higher than the temperature of the second processing liquid by supplying the liquid to the flow channel 33.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a substrate processing apparatus. [Background technology]

[0002] In manufacturing processes for semiconductor devices and flat panel displays, a desired pattern is formed by supplying an etching solution to a film formed on the surface of a substrate, such as a wafer or glass substrate. As an apparatus for performing such etching, a substrate processing apparatus has been proposed that supplies an etching solution to a central region of a rotating substrate. In this case, the etching solution supplied to the central region of the substrate spreads toward the outer edge of the substrate due to centrifugal force, so that the surface of the substrate is etched with the supplied etching solution.

[0003] Here, since the etching process is performed by a chemical reaction between the etching solution and the portion to be removed, it is necessary to ensure that the etching solution is in contact with the portion to be removed. In this case, if the rotation speed of the substrate per unit time is increased, the flow rate of the etching solution increases, and the etching reaction does not proceed. Therefore, when performing the etching process, the rotation speed of the substrate is lowered compared to cleaning processes using cleaning solutions such as pure water. If the rotation speed of the substrate is lowered, the flow rate of the etching solution decreases, and the time that the etching solution is in contact with the portion to be removed can be increased. This can promote the etching reaction on the portion to be removed.

[0004] However, at the outer peripheral edge of the substrate, surface tension makes it difficult for the etching liquid to be discharged outward. Furthermore, when the rotation speed of the substrate is reduced, the centrifugal force acting radially outward becomes smaller, further making it difficult for the etching liquid to be discharged from the substrate. Therefore, the etching liquid is likely to stagnate at the outer peripheral edge of the substrate. Here, the etching liquid supplied to the central region of the substrate flows toward the outer peripheral edge of the substrate while chemically reacting with the removed portion. The etching liquid that has flowed to the outer peripheral edge of the substrate is already used etching liquid, i.e., etching liquid with reduced reactivity with the removed portion. When the etching liquid with reduced reactivity stagnates at the outer peripheral edge of the substrate, the processing rate at the outer peripheral edge of the substrate decreases, impairing the uniformity of the processing rate across the surface of the substrate.

[0005] For this reason, a substrate processing apparatus has been proposed in which an annular ring member having an inner peripheral edge formed along the outer peripheral edge of the substrate is provided around the outer periphery of the substrate, and the ring member expands the surface of the substrate (Patent Document 1). As a result, surface tension is no longer exerted on the etching solution that has flowed to the outer peripheral edge of the substrate, allowing the etching solution to be smoothly discharged outside the substrate. This prevents the etching solution, whose reactivity has decreased, from accumulating around the outer peripheral edge of the substrate, thereby improving the uniformity of the processing rate across the surface of the substrate. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2022-155377 Summary of the Invention [Problem to be solved by the invention]

[0007] However, in such substrate processing apparatuses that provide a ring member around the outer periphery of a substrate, the high-temperature etching solution supplied to the substrate during the etching process spreads toward the outer periphery of the substrate as the substrate rotates, causing the ring member to heat to a high temperature. After the etching process, the etching solution is replaced with a low-temperature cleaning solution, and the low-temperature cleaning solution supplied to the substrate spreads toward the outer periphery of the substrate as the substrate rotates, thereby cooling the ring member. Such temperature fluctuations cause the ring member to thermally expand and contract. This can cause the ring member to become distorted. If the ring member becomes distorted, it becomes difficult for the ring member to uniformly approach the outer periphery of the substrate.

[0008] If there are areas where the ring member and the outer edge of the substrate are not close to each other, the surface of the substrate will not expand at those areas, i.e., it will be the same as if the ring member were not provided, causing the etching liquid to stagnate at the outer edge of the substrate and reducing the processing rate at the outer edge of the substrate.

[0009] The present invention has been made to solve the above-mentioned problems, and has an object to provide a substrate processing apparatus that can improve the uniformity of the processing rate within the surface of a substrate. [Means for solving the problem]

[0010] The substrate processing apparatus according to the embodiment includes a holder for holding a substrate and allowing it to rotate, a processing liquid supply unit for supplying a first processing liquid and a second processing liquid having a temperature lower than that of the first processing liquid to the substrate, a ring-shaped member having an inner periphery shaped to fit the outer periphery of the substrate and integrally formed around the entire circumference, the ring member having a flow path through which a liquid flows in the circumferential direction, and a flow path through which a liquid flows. The aforementioned a liquid supply unit that supplies a liquid to the flow path, The aforementioned By supplying liquid, the temperature of the ring member is The aforementioned From the temperature of the first processing liquid Low , The aforementioned From the temperature of the second processing liquid high The temperature is adjusted to a predetermined value. [Effects of the Invention]

[0011] According to the embodiment of the present invention, it is possible to improve the uniformity of the processing rate within the surface of the substrate. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus according to an embodiment. [Figure 2] 2A is a schematic plan view illustrating the ring member, and FIG. 2B is a view of the ring member in FIG. 2A as seen from the direction of arrow A. FIG. [Figure 3] 1A is a cross-sectional view illustrating the positions of each component during etching processing, and FIG. 1B is a cross-sectional view illustrating the positions of each component during cleaning processing. [Figure 4] 2(A) is a schematic cross-sectional view showing the flow state of the etching solution during etching processing at the cross-sectional position of line BB in FIG. 2(A). [Figure 5] 1 is a flowchart showing a procedure for substrate processing according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] [composition] A substrate processing apparatus 1 according to an embodiment of the present invention will be described below with reference to Figs. 1 to 4. The surface of a substrate W to be processed is referred to as the front surface, and the opposite surface is referred to as the back surface. Note that, for example, a nitride film is formed on the front surface of the substrate W processed in this embodiment. As shown in Fig. 1, the substrate processing apparatus 1 includes a holding unit 10, a supply unit 20, a ring unit 30, a rotation mechanism 40, a recovery unit 50, and a control unit 60.

[0014] The holder 10 rotatably and horizontally holds the substrate W. The holder 10 includes a mounting portion 11, a shaft 12, holding pins 13, and a pin opening / closing mechanism 14.

[0015] The mounting portion 11 has a cylindrical shape and is larger in radial dimension than the substrate W. The mounting portion 11 has a surface 11a that faces the rear surface of the substrate W. The central region of the surface 11a is open.

[0016] The shaft 12 is cylindrical and has a smaller diameter than the mounting portion 11, and is connected to the surface opposite to the surface 11a of the mounting portion 11 so that its axis is aligned. The shaft 12 is hollow, and is formed so that the opening of the surface 11a and the hollow of the shaft 12 overlap in a plan view.

[0017] The holding pins 13 contact the outer periphery of the substrate W to hold the substrate W horizontally. A plurality of holding pins 13 are provided at equal intervals on the surface 11a of the mounting section 11. As shown in FIG. 2(A), six holding pins 13 are provided in this embodiment.

[0018] The pin opening / closing mechanism 14 moves the plurality of holding pins 13 between an open position where they are spaced apart from the substrate W and a closed position where they contact the outer periphery of the substrate W to hold the substrate W.

[0019] 1, the supply unit 20 is provided above the holding unit 10. The supply unit 20 includes a processing liquid supply unit 21, a heating unit 22, and a supply unit lifting mechanism 23.

[0020] The processing liquid supply unit 21 supplies a processing liquid to the surface of the substrate W held by the holder 10. In this embodiment, the processing liquids are a first processing liquid and a second processing liquid. The first processing liquid is, for example, an etching liquid Lp such as an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution) or an aqueous solution containing hydrogen fluoride. The second processing liquid is, for example, a cleaning liquid Lw such as pure water or IPA. The temperature of the first processing liquid can be, for example, 160°C, and the temperature of the second processing liquid can be, for example, 25°C. In this embodiment, a phosphoric acid solution is used as the etching liquid Lp, and pure water is used as the cleaning liquid Lw. The processing liquid supply unit 21 includes a processing liquid nozzle 211, a processing liquid tank 212, a processing liquid supply pipe 213, a pump 214, a valve 215, and a flow meter 216.

[0021] The processing liquid nozzle 211 includes a first processing liquid nozzle 211a and a second processing liquid nozzle 211b. The first processing liquid nozzle 211a supplies an etching liquid Lp onto the surface of the substrate W. The second processing liquid nozzle 211b supplies a cleaning liquid Lw onto the surface of the substrate W.

[0022] The processing liquid tank 212 stores a plurality of processing liquids, one for each processing liquid. The processing liquid tank 212 includes a first processing liquid tank 212a that stores an etching liquid Lp and a second processing liquid tank 212b that stores a cleaning liquid Lw. The first processing liquid tank 212a is provided with a heating unit (not shown) therein. The heating unit heats the etching liquid Lp in accordance with the processing of the substrate W, and adjusts the temperature of the etching liquid Lp. In this embodiment, the heating unit heats the phosphoric acid solution to, for example, about 160°C.

[0023] The processing liquid supply pipe 213 is a pipe for supplying the processing liquid stored in the processing liquid tank 212 to the processing liquid nozzle 211. That is, one end of the processing liquid supply pipe 213 is connected to the processing liquid nozzle 211, and the other end of the processing liquid supply pipe 213 is connected to the processing liquid tank 212. The processing liquid supply pipe 213 includes a first processing liquid supply pipe 213a and a second processing liquid supply pipe 213b. One end of the first processing liquid supply pipe 213a is connected to the first processing liquid tank 212a, and the other end is connected to the first processing liquid nozzle 211a. The second processing liquid supply pipe 213b is connected to the second processing liquid tank 212b, and the other end is connected to the second processing liquid nozzle 211b.

[0024] The pump 214 is provided in the processing liquid supply pipe 213. The pump 214 supplies the processing liquid stored in the processing liquid tank 212 to the processing liquid nozzle 211.

[0025] The valve 215 is provided in the processing liquid supply pipe 213. The valve 215 has a function of starting and stopping the supply of the processing liquid and a function of adjusting the flow rate.

[0026] The flow meter 216 is provided in the processing liquid supply pipe 213. The flow meter 216 detects the flow rate of the processing liquid flowing through the processing liquid supply pipe 213.

[0027] The heating unit 22 heats the etching liquid Lp on the surface of the substrate W to, for example, 180° C. Note that heating the etching liquid Lp supplied to the surface of the substrate W also includes a mode in which the substrate W is heated and the etching liquid Lp is indirectly heated via the substrate W. The heating unit 22 includes a plate 221 and a heater 222.

[0028] The plate 221 has a circular shape and is disposed horizontally facing the surface of the substrate W. The outer diameter of the plate 221 is larger than the outer diameter of the substrate W. The plate 221 is preferably heat-resistant and chemical-resistant, and is formed of, for example, quartz. In this embodiment, the plate 221 has two supply ports 221a. The supply ports 221a are formed for each processing liquid nozzle 211 at positions on the plate 221 that are slightly shifted from a position corresponding to the rotation axis of the substrate W. As a result, the positions at which the supply ports 221a face each other on the substrate W change sequentially as the substrate W rotates, thereby making it possible to uniformize the temperature of the etching liquid Lp. Furthermore, the tips of the first processing liquid nozzle 211a and the second processing liquid nozzle 211b are inserted into the two supply ports 221a, respectively.

[0029] The heater 222 is circular and sheet-shaped. A plurality of heaters 222 may be provided concentrically. In this case, a plurality of annular heater pieces are provided outside a circular heater piece. The heater 222 generates heat when energized. The plurality of heaters 222 may generate heat such that the temperature increases radially outward. This prevents the temperature of the outer periphery of the substrate W from decreasing due to heat dissipation. The heater 222 has a through-hole 222a. The through-hole 222a is located in the heater 222 slightly offset from the rotation axis of the substrate W and is formed for each processing liquid nozzle 211 at the same position as the supply port 221a in a plan view. A first processing liquid nozzle 211a and a second processing liquid nozzle 211b are inserted into the two through-holes 222a, respectively.

[0030] The supply unit lifting mechanism 23 moves the supply unit 20 in a direction toward or away from the substrate W. For example, the supply unit lifting mechanism 23 moves the supply unit 20 between a standby position away from the substrate W so that the substrate W can be loaded and unloaded, as shown in Fig. 1, and a heating position close to the substrate W with a predetermined gap therebetween so that the etching liquid Lp can be heated during the etching process, as shown in Fig. 3(A).

[0031] The ring section 30 includes a ring member 31, a ring member lifting mechanism 32, a flow path 33, a liquid supply section , a liquid discharge pipe 35, and a detection section .

[0032] As shown in FIG. 2A, the ring member 31 is an annular member whose inner periphery is integrally formed along the entire circumference and conforms to the outer periphery of the substrate W. The ring member 31 is plate-shaped, and its outer diameter is smaller than that of the plate 221 of the heating unit 22. The ring member 31 is preferably heat-resistant and chemical-resistant, and may be made of, for example, polyphenylene sulfide (PPS). The ring member 31 is provided on the surface 11a of the mounting unit 11 so as to be movable up and down by a ring member lifting mechanism 32 (described later). The ring member 31 comes into close contact with the outer periphery of the substrate W, thereby smoothly discharging the etching solution Lp that has spread around the outer periphery of the substrate W due to the rotation of the substrate W to the outside of the substrate W. The surface of the ring member 31 facing the plate 221 of the heating unit 22 is referred to as the front surface, and the opposite surface is referred to as the back surface. The surface of the ring member 31 is preferably a horizontal plane. The ring member 31 has a cover portion 31a, a notch 31b, and a hole 31c.

[0033] 4, the cover portion 31a is a member that protrudes integrally around the entire outer periphery of the ring member 31 toward the mounting portion 11. When the ring member 31 is close to the outer periphery of the substrate W, the cover portion 31a prevents the etching liquid Lp that has scattered radially outward from the ring member 31 from reaching the rear surface of the substrate W.

[0034] The notches 31b are recesses provided on the side surface on the inner periphery of the ring member 31. As shown in FIG. 2(A), the notches 31b are shaped to accommodate the retaining pins 13 in the closed position so as to avoid interference with the retaining pins 13. In this embodiment, a U-shape is shown as an example, but the shape is not limited to this. In a plan view, the notches 31b are provided in the same positions as the retaining pins 13 and in the same number. Thus, in this embodiment, six notches 31b are provided.

[0035] As shown in Fig. 2(B), the hole 31c is formed on the side surface including the cover portion 31a on the outer periphery of the ring member 31. One end of the hole 31c is connected to the tip of a first flow path 33a or the tip of a second flow path 33b, which will be described later. The other end of the hole 31c is connected to the tip of a first liquid supply pipe 341a or the tip of a second liquid supply pipe 341b, which will be described later. Note that Fig. 2(B) omits the illustration of the liquid supply pipe 341 and the liquid discharge pipe 35, which will be described later.

[0036] The ring member lifting mechanism 32 moves the position of the ring member 31 in the direction of the rotation axis of the substrate W. For example, the ring member lifting mechanism 32 moves the ring member 31 between an approach position where the inner peripheral edge of the ring member 31 is close to the outer peripheral edge of the substrate W, as shown in Fig. 3(A), and a retracted position where the inner peripheral edge of the ring member 31 is retracted from the outer peripheral edge of the substrate W, as shown in Fig. 3(B).

[0037] Specifically, the close position refers to a position where the inner peripheral edge of the ring member 31 and the outer peripheral edge of the substrate W are close enough to prevent the etching solution Lp from dropping from the gap between the substrate W and the ring member 31. When the ring member 31 is in the close position, the surface of the ring member 31 is flush with the surface of the substrate W or is slightly lower than the surface of the substrate W.

[0038] Specifically, the retracted position refers to a position where the substrate W can be loaded and unloaded and where the ring member 31 is separated from the outer periphery of the substrate W so that the outer periphery of the substrate W and the processing liquid near the outer periphery of the substrate W are not heated by radiant heat from the ring member 31. When the ring member 31 is in the retracted position, a gap is formed between the surface 11a of the mounting part 11 and the ring member 31, through which a liquid supply pipe 341 and a liquid discharge pipe 35, which will be described later, pass.

[0039] As shown in FIG. 4, the flow path 33 is provided inside the ring member 31. More preferably, it is provided around the entire periphery inside the outer periphery including the cover portion 31a of the ring member 31. The flow path 33 maintains the ring member 31 at a predetermined temperature by allowing the processing liquid to flow through it. The predetermined temperature is set to be lower than the temperature of the processing liquid when processing at the highest temperature among the multiple processing liquids supplied to the substrate W and higher than the temperature of the processing liquid when processing at the lowest temperature. Furthermore, the predetermined temperature is preferably the highest temperature among the temperatures that do not cause unintended etching of the substrate W due to radiant heat from the ring member 31 when the ring member 31 is in the retracted position. The flow path 33 has a first flow path 33a and a second flow path 33b.

[0040] The first flow path 33a is supplied with the etching liquid Lp stored in the first processing liquid tank 212a. The second flow path 33b is supplied with the cleaning liquid Lw stored in the second processing liquid tank 212b. The first flow path 33a is preferably located closer to the inner peripheral edge of the ring member 31 in terms of linear distance than the second flow path 33b to facilitate heat transfer to the outer peripheral edge of the substrate W. As shown in FIG. 4 , in this embodiment, of the two flow paths 33 arranged side by side in the rotation axis direction of the ring member 31, the first flow path 33a is located closer to the surface of the ring member 31, and the second flow path 33b is located closer to the mounting unit 11. Furthermore, a plurality of first flow paths 33a and a plurality of second flow paths 33b may be provided. In this case, it is preferable that the first flow paths 33a and the second flow paths 33b are arranged alternately.

[0041] The liquid supply unit 34 includes a liquid supply pipe 341 , a pump 342 , a valve 343 and a flow meter 344 .

[0042] The liquid supply pipe 341 is a pipe for supplying liquid to the flow path 33. In this embodiment, the liquid supplied to the flow path 33 is the processing liquid stored in the processing liquid tank 212. That is, one end of the liquid supply pipe 341 is connected to the processing liquid tank 212, and the other end is connected to the flow path 33 via the hole 31c. As shown in FIG. 1, the liquid supply pipe 341 is inserted through the opening in the surface 11a and the hollow of the shaft 12. A rotary joint (not shown) is provided midway along the liquid supply pipe 341 so as not to hinder the rotation of the mounting unit 11. The liquid supply pipe 341 is also connected so as to supply the processing liquid to the flow path 33 through a gap between the mounting unit 11 and the back surface of the ring member 31. The liquid supply pipe 341 includes a first liquid supply pipe 341a and a second liquid supply pipe 341b. One end of the first liquid supply pipe 341a is connected to the first processing liquid tank 212a, and the other end is connected to the first flow path 33a. The second liquid supply pipe 341b has one end connected to the second processing liquid tank 212b and the other end connected to the second flow path 33b.

[0043] The pump 342 is provided on the liquid supply pipe 341. The pump 342 supplies the processing liquid stored in the processing liquid tank 212 to the flow path 33.

[0044] The valve 343 is provided on the liquid supply pipe 341. The valve 343 has a function of starting and stopping the supply of the processing liquid and a function of adjusting the flow rate.

[0045] The flow meter 344 is provided in the liquid supply pipe 341. The flow meter 344 detects the flow rate of the processing liquid flowing through the liquid supply pipe 341.

[0046] The liquid discharge pipe 35 is a pipe for recovering the liquid that has flowed through the flow path 33. In this embodiment, the liquid flowing through the flow path 33 is the treatment liquid stored in the treatment liquid tank 212. The liquid recovered through the liquid discharge pipe 35 is sent to the treatment liquid tank 212. That is, one end of the liquid discharge pipe 35 is connected to the flow path 33 via the hole 31c, and the other end is connected to the treatment liquid tank 212. As shown in FIG. 1 , the liquid discharge pipe 35 is inserted through the opening in the surface 11a and the hollow of the shaft 12. The liquid discharge pipe 35 is connected so as to discharge the treatment liquid from the flow path 33 through the gap between the mounting unit 11 and the back surface of the ring member 31. In addition, the liquid discharge pipe 35 is provided with a rotary joint (not shown) so as not to hinder the rotation of the mounting unit 11. The liquid discharge pipe 35 includes a first liquid discharge pipe 35a and a second liquid discharge pipe 35b. The first liquid discharge pipe 35a has one end connected to the first flow path 33a and the other end connected to the first processing liquid tank 212a, and the second liquid discharge pipe 35b has one end connected to the second flow path 33b and the other end connected to the second processing liquid tank 212b.

[0047] The detection unit 36 ​​detects the temperature of the ring member 31 while the processing liquid is being supplied to the flow path 33. The detection unit 36 ​​is preferably provided in a position not directly affected by radiant heat from the heating unit 22, for example, on the back surface of the ring member 31. As shown in FIG. 4, the detection unit 36 ​​is preferably provided in a position not directly affected by radiant heat from the substrate W and the etching liquid Lp supplied to the substrate W, for example, near the cover portion 31a on the back surface of the ring member 31. The detection unit 36 ​​may be, for example, a thermocouple or a resistance temperature detector. If the detection unit 36 ​​is a thermocouple requiring a lead wire (not shown), the lead wire is inserted through the opening in the surface 11a and the hollow of the shaft 12, similar to the liquid supply pipe 341 and the liquid discharge pipe 35.

[0048] The rotation mechanism 40 rotates both the holding portion 10 and the ring member 31 at a predetermined rotation speed. The rotation mechanism 40 has a drive source (not shown) such as a motor, and the drive source rotates the holding portion 10 and the ring member 31.

[0049] The collection unit 50 includes a cup 51 and a cup lifting mechanism 52 .

[0050] The cup 51 is cylindrical and is provided to surround the holder 10 and the ring member 31. The upper part of the peripheral wall of the cup 51 is inclined radially inward and is open to expose the holder 10. The cup 51 collects the processing liquid that has scattered radially outward from the holder 10 due to the rotation of the substrate W. The cup 51 also sends the collected processing liquid to a collection tank (not shown) via piping (not shown).

[0051] The cup lifting mechanism 52 moves the position of the cup 51 in the direction of the rotation axis of the substrate W. For example, the cup lifting mechanism 52 moves the cup 51 to a lowered position as shown in Fig. 1, where the cup 51 is lowered so that the substrate W can be loaded and unloaded, and to an elevated position as shown in Fig. 3, where the cup 51 is elevated so that the scattered processing liquid can be collected.

[0052] The control unit 60 controls each part of the substrate processing apparatus 1. The control unit 60 has a calculation unit (not shown) that executes a program, a memory unit (not shown) that stores various information such as the program and operating conditions, an input unit (not shown) that inputs various information, a display unit (not shown) that displays various information, and a drive circuit (not shown) that drives each element. That is, the control unit 60 controls the pin opening / closing mechanism 14, the supply unit lifting / lowering mechanism 23, the ring member lifting / lowering mechanism 32, the rotation mechanism 40, the cup lifting / lowering mechanism 52, the pumps 214 and 342, the valves 215 and 343, and the heater 222.

[0053] For example, the control unit 60 controls the flow of the processing liquid flowing through the processing liquid supply pipe 213 and the liquid supply pipe 341. but The control unit 60 controls the valves 215 and 343 to achieve a predetermined flow rate. It is preferable that the control unit 60 controls the valve 343 so that the flow rate of the etching liquid Lp flowing through the first liquid supply pipe 341a is greater than the flow rate of the cleaning liquid Lw flowing through the second liquid supply pipe 341b.

[0054] Furthermore, when the flow rate of the processing liquid flowing through the processing liquid supply pipe 213 or the liquid supply pipe 341 detected by the flowmeter 216, 344 is less than a predetermined flow rate, the control unit 60 controls the valves 215, 343 to achieve the predetermined flow rate, thereby adjusting the flow rate of the processing liquid supplied to the surface of the substrate W or the flow path 33. For example, when the flow rate of the etching liquid Lp detected by the flowmeter 216 is less than the predetermined flow rate, the control unit 60 controls the valve 215 to increase the flow rate of the etching liquid Lp supplied to the surface of the substrate W, thereby achieving the predetermined flow rate.

[0055] Furthermore, the control unit 60 controls the valve 343 in accordance with the temperature of the ring member 31 detected by the detection unit 36, thereby adjusting the flow rate of at least one of the etching liquid Lp and the cleaning liquid Lw supplied to the flow path 33. For example, when the temperature detected by the detection unit 36 ​​is lower than a predetermined temperature during operation of the substrate processing apparatus 1, the control unit 60 controls the valve 343 to increase the flow rate of the high-temperature etching liquid Lp supplied to the first flow path 33a, or to decrease the flow rate of the low-temperature cleaning liquid Lw supplied to the second flow path 33b.

[0056] [Operation] The operation of the substrate processing apparatus 1 of this embodiment as described above will be described with reference to the flowchart of Fig. 5 in addition to Figs. 1 to 4. During operation of the substrate processing apparatus 1, the etching liquid Lp and the cleaning liquid Lw are constantly supplied to the flow path 33 provided in the ring member 31 from the processing liquid tank 212 through the liquid supply pipe 341. That is, even before the substrate W is loaded into the ring member 31, the etching liquid Lp and the cleaning liquid Lw flowing through the flow path 33 keep the ring member 31 at a predetermined temperature.

[0057] First, the supply unit 20 is placed in the standby position, the holding pins 13 are in the open position, the ring member 31 is in the retracted position, and the cup 51 is in the lowered position. The heater 222 of the heating unit 22 is energized in advance to maintain the plate 221 at, for example, 180°C. In this state, the substrate W is loaded between the holder 10 and the supply unit 20 (step S01), and the holding pins 13 are moved from the open position to the closed position, thereby holding the substrate W by the holder 10, as shown in FIG. 1 (step S02). Then, the cup lifting mechanism 52 moves the cup 51 from the lowered position to the raised position. The ring member lifting mechanism 32 moves the ring member 31 from the retracted position to the approach position (step S03).

[0058] When the ring member 31 moves to the approach position, the substrate W, the holder 10, and the ring member 31 are rotated at a predetermined rotation speed by the rotation mechanism 40 (step S04). The rotation speed at this time is, for example, 100 rpm or less. Thereafter, as shown in FIG. 3(A), the supply unit 20 moves to the heating position, and the processing liquid supply unit 21 supplies the etching liquid Lp to the central region of the surface of the substrate W (step S05). The heating unit 22 provided in the supply unit 20 also heats the etching liquid Lp on the surface of the substrate W. At this time, the ring member 31 is maintained at a predetermined temperature by the etching liquid Lp and the cleaning liquid Lw flowing through the flow path 33. Therefore, thermal expansion of the ring member 31 caused by sudden heating by the heating unit 22 located at the heating position can be suppressed.

[0059] The supplied etching liquid Lp flows from the central region of the substrate W toward its outer periphery due to the rotation of the substrate W. As a result, the etching liquid Lp spreads over the entire surface of the substrate W, and the heated etching liquid Lp removes the nitride film formed on the substrate W. The etching liquid Lp that has flowed to the outer periphery of the substrate W does not stagnate at the outer periphery of the substrate W but flows onto the surface of the ring member 31, as shown in FIG. 4, because the ring member 31 reduces the change in flow rate at the outer periphery of the substrate W. At this time, the ring member 31 is maintained at a predetermined temperature by the etching liquid Lp and cleaning liquid Lw in the flow path 33. Therefore, thermal expansion of the ring member 31 caused by rapid heating by the high-temperature etching liquid Lp can be suppressed. Furthermore, because the ring member 31 is maintained at a predetermined temperature, the temperature of the outer periphery of the substrate W and the temperature of the etching liquid Lp on the outer periphery of the substrate W are less likely to decrease. This improves the processing rate at the outer periphery of the substrate W. The etching liquid Lp that has flowed onto the surface of the ring member 31 is then discharged outward from the outer periphery of the ring member 31.

[0060] After a predetermined time has elapsed, the processing liquid supply unit 21 stops supplying the etching liquid Lp to the substrate W (step S06). After the supply of the etching liquid Lp has stopped, the ring member 31, which is in the approach position, is moved to the retracted position by the ring member lifting mechanism 32 (step S07). This allows the etching liquid Lp remaining on the substrate W or the cleaning liquid Lw, which will be described later and has been supplied to the surface of the substrate W and spread to the outer periphery of the substrate W, to be heated by radiant heat from the ring member 31, thereby preventing unintended etching from occurring at the outer periphery of the substrate W. Furthermore, the etching liquid Lp remaining on the bevel portion of the substrate W after the etching process can be washed away by the cleaning liquid Lw during the cleaning process.

[0061] 3(B), the processing liquid supply unit 21 supplies the cleaning liquid Lw to the central region of the surface of the substrate W (step S08). The supplied cleaning liquid Lw flows from the central region of the substrate W toward the outer periphery due to the rotation of the substrate W. This washes away the etching liquid Lp from the surface of the substrate W. The rotation speed at this time is, for example, about 150 rpm to 300 rpm. The ring member 31 is maintained at a predetermined temperature by the etching liquid Lp and cleaning liquid Lw in the flow path 33. This makes it possible to suppress thermal contraction of the ring member 31 caused by rapid cooling by the low-temperature cleaning liquid Lw. After a predetermined time has elapsed, the processing liquid supply unit 21 stops supplying the cleaning liquid Lw, and the supply unit 20 moves to the standby position (step S09).

[0062] After the supply of the cleaning liquid Lw is stopped, the rotation of the substrate W and ring member 31 is stopped by the rotation mechanism 40 (step S10). Then, the cup 51 moves from the raised position to the lowered position. Also, the holding pins 13 move from the closed position to the open position (step S11). Then, the substrate W is unloaded (step S12).

[0063] [effect] As described above, the substrate processing apparatus 1 of this embodiment includes the holder 10 that holds the substrate W and enables it to rotate, the processing liquid supply unit 21 that supplies the substrate W with a first processing liquid and a second processing liquid that is lower in temperature than the first processing liquid, the ring member 31 that has an inner peripheral edge that conforms to the outer peripheral edge of the substrate W and is integrally formed around the entire circumference, the ring member 31 having a flow path 33 through which liquid flows in the circumferential direction, and the liquid supply unit 34 that supplies liquid to the flow path 33, and the liquid supply unit 34 supplies liquid to the flow path 33, thereby raising the temperature of the ring member 31 to a temperature lower than the temperature of the first processing liquid. Low , the temperature of the second treatment liquid high That is, the liquid supply unit 34 supplies liquid to the flow path 33 provided in the circumferential direction of the ring member 31, thereby allowing the ring member 31 to be maintained at the predetermined temperature.

[0064] This makes it possible to prevent the etching liquid Lp and cleaning liquid Lw supplied to the substrate W from spreading to the outer periphery of the substrate W, or to prevent rapid heating and cooling of the ring member 31 caused by the heating unit 22 being located at the heating position. That is, it is possible to prevent thermal expansion and thermal contraction of the ring member 31. Therefore, the ring member 31 can be uniformly brought close to the outer periphery of the substrate W, and it is possible to prevent the etching liquid Lp from accumulating at the outer periphery of the substrate W. This makes it possible to improve the uniformity of the processing rate within the surface of the substrate W.

[0065] The flow path 33 has a first flow path 33a through which a first liquid having a temperature higher than a predetermined temperature flows, and a second flow path 33b through which a second liquid having a temperature lower than a predetermined temperature flows. The substrate processing apparatus 1 also includes a control unit 60 that adjusts the temperature of the ring member 31 to a predetermined temperature by controlling the flow rate of the first liquid supplied to the first flow path 33a and the flow rate of the second liquid supplied to the second flow path 33b. In this embodiment, the first liquid is an etching liquid Lp, and the second liquid is a cleaning liquid Lw. This allows the ring member 31 to be maintained at a predetermined temperature, and thermal expansion and thermal contraction of the ring member 31 can be suppressed.

[0066] The ring unit 30 includes a detection unit 36 ​​that detects the temperature of the ring member 31, and the control unit 60 controls the flow rate of the etching liquid Lp supplied to the first flow path 33a and the flow rate of the cleaning liquid Lp supplied to the second flow path 33b in accordance with the temperature detected by the detection unit 36. w The control unit 60 controls at least one of the flow rates of the etching liquid Lp supplied to the first flow path 33a and the cleaning liquid Lw supplied to the second flow path 33b. For example, when the temperature of the ring member 31 detected by the detection unit 36 ​​during substrate processing is lower than a predetermined temperature, the control unit 60 controls the flow rate of the etching liquid Lp supplied to the first flow path 33a to increase. Alternatively, the control unit 60 controls the flow rate of the cleaning liquid Lw supplied to the second flow path 33b to decrease. As a result, even if the temperature of the ring member 31 deviates from the predetermined temperature, the temperature of the ring member 31 can be adjusted to the predetermined temperature based on the temperature detected by the detection unit 36. Therefore, thermal expansion and thermal contraction of the ring member 31 can be further suppressed.

[0067] The control unit 60 controls the flow rate of the etching liquid Lp supplied to the first flow path 33a so that it is greater than the flow rate of the cleaning liquid Lw supplied to the second flow path 33b. As a result, the temperature of the ring member 31 is maintained at a relatively high temperature, so that the etching liquid Lp on the outer periphery of the substrate W and the surface of the substrate W is heated, thereby improving the processing rate of the outer periphery of the substrate W during the etching process.

[0068] The substrate processing apparatus 1 includes a ring member lifting mechanism 32 that can raise and lower the ring member 31. The ring member lifting mechanism 32 moves the ring member 31 between a proximity position where the inner peripheral edge of the ring member 31 is close to the outer peripheral edge of the substrate W and a retracted position where the inner peripheral edge of the ring member 31 is retracted from the outer peripheral edge of the substrate W. For example, if the ring member 31, which is kept at a relatively high temperature by the etching solution Lp and cleaning solution Lw flowing through the flow path 33, is in the proximity position during the cleaning process, the outer peripheral edge of the substrate W is heated. The cleaning solution Lw flows from the center region of the substrate W toward the heated outer peripheral edge of the substrate W, etching the outer peripheral edge of the substrate W. Thus, even if the entire surface of the substrate W is kept warm by the heating unit 22 and the ring member 31 during the etching process, only the outer peripheral edge of the substrate W is heated during the cleaning process, which may result in an uneven processing rate across the surface of the substrate W.

[0069] Therefore, in this embodiment, the ring member 31 is moved to the approach position during etching processing and to the retracted position during cleaning processing. At the approach position, the ring member 31, maintained at a predetermined temperature, allows the ring member 31 to approach the outer periphery of the substrate W uniformly, thereby preventing the etching liquid Lp from accumulating at the outer periphery of the substrate W. This improves the uniformity of the processing rate within the surface of the substrate W. At the retracted position, the etching liquid Lp remaining on the substrate W or the cleaning liquid Lw supplied to the surface of the substrate W and spreading to the outer periphery of the substrate W is heated by radiant heat from the ring member 31, thereby preventing unintended etching from occurring at the outer periphery of the substrate W. Furthermore, the etching liquid Lp remaining on the bevel portion of the substrate W after etching processing can be washed away by the cleaning liquid Lw during cleaning processing. This improves the uniformity of the processing rate within the surface of the substrate W.

[0070] The substrate processing apparatus 1 has a heating unit 22 that has a diameter larger than the outer diameter of the substrate W and faces the surface of the substrate W. The heating unit 22 heats the etching liquid Lp supplied to the surface of the substrate W. This promotes the reaction between the etching liquid Lp and the removed portion, thereby improving the processing rate within the surface of the substrate W.

[0071] The first liquid supplied to the first flow path 33a by the liquid supply unit 34 can be the first processing liquid. This eliminates the need to provide a tank for storing the first liquid to be supplied to the first flow path 33a, separate from the processing liquid tank 212, thereby simplifying the configuration and saving space.

[0072] [Variations] Hereinafter, modifications of the substrate processing apparatus 1 according to the embodiment of the present invention will be described.

[0073] The liquid supplied to the flow path 33 does not have to be the processing liquid supplied to the substrate W, as long as it can maintain the ring member 31 at a predetermined temperature. For example, a liquid having a temperature equivalent to the predetermined temperature of the ring member 31 may be supplied.

[0074] As long as the ring member 31 can be maintained at a predetermined temperature, the flow rate of the liquid supplied to the flow path 33 does not need to be controlled according to the temperature of the ring member 31. For example, the liquid may be supplied to the flow path 33 at an optimal flow rate determined in advance by experiments or simulations.

[0075] The number of flow paths 33 provided in the ring member 31 does not need to be multiple, as long as the ring member 31 can be maintained at a predetermined temperature. For example, one type of liquid or etching liquid Lp at a predetermined temperature or higher may be supplied to one flow path 33, and the predetermined temperature may be maintained by controlling the flow rate. Alternatively, a high-temperature liquid and a low-temperature liquid may be selectively supplied to one flow path 33 to achieve the predetermined temperature. Furthermore, a liquid in which a high-temperature liquid and a low-temperature liquid are mixed may be supplied to one flow path 33 to achieve the predetermined temperature.

[0076] The flow path 33 provided in the ring member 31 does not have to be inside the ring member 31. For example, it may be provided so as to be in contact with the back surface of the ring member 31, so as to maintain the ring member 31 at a predetermined temperature.

[0077] The flow path 33 provided in the ring member 31 does not have to be provided around the entire circumference of the ring member 31 as long as the entire ring member 31 can be maintained at a predetermined temperature. For example, the flow path 33 may be provided around only half the circumference of the ring member 31.

[0078] The shape of the flow path 33 provided in the ring member 31 does not have to be similar to the outer periphery of the ring member 31. For example, the flow path 33 may have a meandering shape.

[0079] The method of supplying the treatment liquid to the flow path 33 provided in the ring member 31 is not limited to the method using a rotary joint. In other words, it is sufficient if the treatment liquid can be supplied to and discharged from the flow path 33 without interfering with the rotation of the mounting part 11.

[0080] The processing contents of the substrate processing apparatus 1 and the processing liquid supplied to the substrate W are not limited to those exemplified above. The substrate W and film to be processed are also not limited to those exemplified above.

[0081] [Other embodiments] Although the embodiments of the present invention and modifications of each part have been described above, these embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit and scope of the invention. These embodiments and modifications are included within the scope and spirit of the invention, and are also included in the invention described in the claims. [Explanation of symbols]

[0082] 1. Substrate processing equipment 10 Holding part 11 Placement section 11a side 12 shafts 13 Retaining pin 14-pin opening and closing mechanism 20 Supply section 21 Processing liquid supply unit 22 Heating section 23 Supply section lifting mechanism 30 Ring section 31 Ring member 31a Cover part 31b Notch 31c hole 32 Ring member lifting mechanism 33 Flow path 33a First flow path 33b Second flow path 34 Liquid supply section 35 Liquid drain pipe 35a First liquid discharge pipe 35b Second liquid discharge pipe 36 Detector 40 Rotation mechanism 50 Collection Department 51 cups 52 Cup lifting mechanism 60 Control Unit 211 Processing liquid nozzle 211a First processing liquid nozzle 211b Second processing liquid nozzle 212 Processing liquid tank 212a First processing liquid tank 212b Second processing liquid tank 213 Processing liquid supply pipe 213a First processing liquid supply pipe 213b Second processing liquid supply pipe 214 Pump 215 Valve 216 Flow meter 221 Plate 221a Supply port 222 Heater 222a Through hole 341 Liquid supply pipe 341a first liquid supply pipe 341b Second liquid supply pipe 342 Pump 343 Valve 344 Flow meter

Claims

1. a holder that holds the substrate and enables it to rotate; a processing liquid supply unit that supplies a first processing liquid and a second processing liquid having a temperature lower than that of the first processing liquid to the substrate; a ring-shaped member having an inner peripheral edge shaped to follow the outer peripheral edge of the substrate, the ring member being integrally formed around the entire circumference, the ring member having a flow path through which a liquid flows in the circumferential direction; a liquid supply unit that supplies the liquid to the flow path; Equipped with The liquid supply unit supplies the liquid to the flow path, thereby adjusting the temperature of the ring member to a predetermined temperature that is set lower than the temperature of the first processing liquid and higher than the temperature of the second processing liquid.

2. the flow path includes a first flow path through which a first liquid having a temperature higher than the predetermined temperature flows, and a second flow path through which a second liquid having a temperature lower than the predetermined temperature flows, 2. The substrate processing apparatus according to claim 1, wherein the liquid supply unit adjusts the temperature of the ring member to the predetermined temperature by supplying the first liquid to the first flow path and the second liquid to the second flow path.

3. The liquid supply unit further includes a control unit that controls the flow rate of the first liquid supplied to the first flow path and the flow rate of the second liquid supplied to the second flow path; the ring member has a detection unit that detects the temperature of the ring member, 3. The substrate processing apparatus according to claim 2, wherein the control unit controls at least one of the flow rate of the first liquid supplied to the first flow path and the flow rate of the second liquid supplied to the second flow path in accordance with the temperature of the ring member detected by the detection unit.

4. The liquid supply unit further includes a control unit that controls the flow rate of the first liquid supplied to the first flow path and the flow rate of the second liquid supplied to the second flow path; 3. The substrate processing apparatus according to claim 2, wherein the control unit controls the flow rate of the first liquid supplied to the first flow path so that the flow rate of the first liquid supplied to the second flow path is greater than the flow rate of the second liquid supplied to the second flow path.

5. Further provided is a ring member lifting mechanism that can lift and lower the ring member, 2. The substrate processing apparatus of claim 1, wherein the ring member lifting mechanism moves the ring member between an approach position where the inner peripheral edge of the ring member is close to the outer peripheral edge of the substrate and a retracted position where the inner peripheral edge of the ring member is retracted from the outer peripheral edge of the substrate.

6. The substrate processing apparatus according to claim 1 , further comprising a heating section having a diameter larger than an outer diameter of the substrate and facing the surface of the substrate.

7. 2. The substrate processing apparatus according to claim 1, wherein the liquid supplied to the flow path by the liquid supply unit is the first processing liquid.

8. 3. The substrate processing apparatus according to claim 2, wherein the first liquid supplied to the first flow path by the liquid supply unit is the first processing liquid.

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