Support glass substrate and laminated substrate using same

Abstract

A support glass substrate of the present invention supports a substrate to be processed. The support glass substrate is characterized in that said substrate is lithium aluminosilicate-based glass and the content of Li2O in the glass composition is 0.02-25 mol%, the average coefficient of linear thermal expansion within the temperature range of 30-380℃ is 38 × 10-7 / ℃ or more and 160 × 10-7 / ℃ or less.

Description

[Technical Field]

[0001] The present invention relates to a supporting glass substrate for supporting a processed substrate and a laminated substrate using the same, and more specifically to a supporting glass substrate used to support a processed substrate in the manufacturing process of a semiconductor package (semiconductor device) and a laminated substrate using the same. [Background technology]

[0002] There is a demand for smaller and lighter portable electronic devices such as mobile phones, notebook personal computers, and smartphones. Accordingly, the mounting space for semiconductor chips used in these electronic devices is severely limited, making high-density mounting of semiconductor chips a challenge. Therefore, in recent years, three-dimensional mounting technology, i.e., stacking semiconductor chips and connecting them with wiring, has been used to achieve high-density mounting of semiconductor packages.

[0003] Conventional wafer-level packages (WLPs) are manufactured by forming bumps on a wafer and then dicing the wafer into individual pieces. However, conventional WLPs have the problem that it is difficult to increase the number of pins, and because the backside of the semiconductor chip is exposed when it is mounted, the semiconductor chip is prone to chipping.

[0004] Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP allows for an increase in the number of pins, and also protects the edges of the semiconductor chip, preventing chipping and other damage to the semiconductor chip. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2019 / 150654 [Patent Document 2] International Publication No. 2020 / 013984 DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0006] Incidentally, in a fan-out type WLP, after molding multiple semiconductor chips with a resin sealing material to form a processed substrate, processes such as wiring on one surface of the processed substrate and forming solder bumps are included.

[0007] These processes involve heat treatment at approximately 200 to 300°C, which may cause deformation of the encapsulant and dimensional changes in the processed substrate. If the processed substrate changes in size, it becomes difficult to form high-density wiring on one surface of the processed substrate and also difficult to form solder bumps accurately.

[0008] In order to suppress dimensional changes in the processed substrate, it is effective to use a glass substrate as the support substrate, but even when a glass substrate is used, dimensional changes in the processed substrate may occur.

[0009] Furthermore, if a WLP is accidentally dropped on the ground during manufacturing, the supporting glass substrate may break, rendering the expensive processed substrate unusable. To avoid this situation, it is important to increase the strength of the supporting glass substrate.

[0010] Lithium aluminosilicate glass is a promising material for a high-strength glass substrate (see Patent Document 1). Lithium aluminosilicate glass generally has a higher Young's modulus than aluminoborosilicate glass, and therefore has high mechanical strength and is likely to be less susceptible to breakage when dropped.

[0011] The present invention has been made in view of the above circumstances, and its technical object is to provide a supporting glass substrate that is less likely to cause dimensional changes in the processed substrate and is less likely to break when dropped, and a laminated substrate using the same. [Means for solving the problem]

[0012] As a result of repeated various experiments, the present inventors have found that the above technical problems can be solved by using lithium aluminosilicate glass as a supporting glass substrate and regulating the thermal expansion coefficient thereof to a predetermined range, and have proposed this finding as the present invention. That is, the supporting glass substrate of the present invention is a supporting glass substrate for supporting a processed substrate, which is made of lithium aluminosilicate glass, has a Li2O content of 0.02 to 25 mol% in the glass composition, and has an average linear thermal expansion coefficient of 38 × 10 in the temperature range of 30 to 380°C. -7 / ℃ or more and 160×10 -7 / °C or less. Here, "lithium aluminosilicate glass" refers to glass containing SiO2, Al2O3, and Li2O in the glass composition. "Average coefficient of linear thermal expansion in the temperature range of 30 to 380°C" refers to the value obtained by measuring the average coefficient of thermal expansion using a dilatometer.

[0013] Furthermore, the supporting glass substrate of the present invention is a supporting glass substrate for supporting a processed substrate, and preferably contains, in mole percent, 50 to 80% of SiO2, 4 to 25% of Al2O3, 0 to 16% of B2O3, 0.9 to 15% of Li2O, more than 0 to 21% of Na2O, 0 to 15% of K2O, 0 to 10% of MgO, 0 to 10% of ZnO, and 50 to 15% of P2O as a glass composition.

[0014] Furthermore, the supporting glass substrate of the present invention preferably satisfies the relationship of molar ratio ([Na2O]?[Li2O]) / ([Al2O3]+[B2O3]+[P2O5])≦1.50. Here, [Na2O] refers to the molar percent content of Na2O. [Li2O] refers to the molar percent content of Li2O. [Al2O3] refers to the molar percent content of Al2O3. [B2O3] refers to the molar percent content of B2O3. [P2O5] refers to the molar percent content of P2O5. ([Na2O]?[Li2O]) / ([Al2O3]+[B2O3]+[P2O5]) refers to the value obtained by subtracting the Li2O content from the Na2O content, divided by the combined amount of Al2O3, B2O3, and P2O5.

[0015] Furthermore, the supporting glass substrate of the present invention preferably satisfies the relationship of molar ratio ([B2O3] + [Na2O] - [P2O5]) / ([Al2O3] + [Li2O]) ≥ 0.001, where ([Na2O] - [Li2O]) / ([Al2O3] + [B2O3] + [P2O5]) refers to the value obtained by subtracting the Li2O content from the Na2O content, divided by the combined amount of Al2O3, B2O3, and P2O5.

[0016] Furthermore, the supporting glass substrate of the present invention preferably contains 12 mol% or more of ([Li2O] + [Na2O] + [K2O]) and satisfies the relationship [SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3] ≧ -40%. Here, [K2O] refers to the mol% content of K2O. [SiO2] refers to the mol% content of SiO2. ([Li2O] + [Na2O] + [K2O]) refers to the total amount of Li2O, Na2O, and K2O. [SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3] refers to the value obtained by subtracting 3 times the content of Al2O3, 2 times the content of Li2O, 1.5 times the content of Na2O, the content of K2O, and the content of B2O3 from the sum of the SiO2 content and 1.2 times the content of P2O5.

[0017] In addition, in the supporting glass substrate of the present invention, the high-temperature viscosity is 10 2.5 It is preferable that the temperature at which the viscosity reaches 10 dPa·s is less than 1660°C. 2.5 The "temperature at dPa·s" can be measured, for example, by the platinum sphere pull-up method.

[0018] The support glass substrate of the present invention preferably has an overflow joining surface at the center in the plate thickness direction, i.e., is formed by an overflow downdraw method. Here, the "overflow downdraw method" is a method for producing a glass substrate by allowing molten glass to overflow from both sides of a refractory molded body and drawing the overflowed molten glass downward while joining at the lower end of the refractory molded body.

[0019] In addition, the supporting glass substrate of the present invention has a mass loss per unit surface area of ​​100.0 mg / cm when immersed in a 5 mass % HCl aqueous solution heated to 80°C for 24 hours. 2 It is preferable that:

[0020] In addition, the supporting glass substrate of the present invention exhibits a mass loss per unit surface area of ​​5.0 mg / cm when immersed in a 5 mass % NaOH aqueous solution heated to 80°C for 6 hours. 2 It is preferable that:

[0021] Furthermore, the supporting glass substrate of the present invention preferably has a compressive stress layer on the glass surface. A method of chemically strengthening a glass substrate is known as a method for increasing the strength of a glass substrate (see Patent Document 2). Increasing the stress depth of the compressive stress layer is a useful method for increasing the strength of a strengthened glass substrate. Specifically, when a laminated substrate falls and collides with the ground, protrusions on the ground may penetrate the supporting glass substrate and reach the tensile stress layer, potentially resulting in breakage of the supporting glass substrate. Therefore, increasing the stress depth of the compressive stress layer makes it more difficult for protrusions on the ground to reach the tensile stress layer, thereby reducing the probability of breakage of the supporting glass substrate.

[0022] Furthermore, the supporting glass substrate of the present invention preferably has a compressive stress layer on the glass surface, and the glass composition preferably contains, in mole percent, 50 to 80% of SiO2, 4 to 25% of Al2O3, 0 to 16% of B2O3, 0.9 to 15% of Li2O, more than 0 to 21% of Na2O, 0 to 15% of K2O, 0 to 10% of MgO, 0 to 10% of ZnO, and 50 to 15% of P2O.

[0023] In addition, in the supporting glass substrate of the present invention, the compressive stress value of the outermost surface of the compressive stress layer is preferably 165 to 1000 MPa. Here, the "compressive stress value of the outermost surface" and "stress depth" refer to values ​​measured from a phase difference distribution curve observed using, for example, a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Manufacturing Co., Ltd.). The stress depth refers to the depth at which the stress value becomes zero. In calculating the stress characteristics, the refractive index of each measurement sample is set to 1.51 and the photoelastic constant is set to 30.1 [(nm / cm) / MPa].

[0024] In addition, in the supporting glass substrate of the present invention, the stress depth of the compressive stress layer is preferably 50 to 200 μm. Lithium aluminosilicate glass is advantageous for obtaining a deep stress depth. In particular, when a glass substrate made of lithium aluminosilicate glass is immersed in a molten salt containing NaNO3 and Li ions in the glass are ion-exchanged with Na ions in the molten salt, a tempered glass substrate having a deep stress depth can be obtained.

[0025] Furthermore, the supporting glass substrate of the present invention preferably has a compressive stress layer on the glass surface, and contains, as a glass composition, 17 mol% or more of Al2O3, 1 mol% or more of P2O5, and 12 mol% or more of ([Li2O] + [Na2O] + [K2O]), and satisfies the relationship: [SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3] ≧ -20 mol%.

[0026] Furthermore, the supporting glass substrate of the present invention preferably has a compressive stress layer on the glass surface, and the stress profile in the thickness direction preferably has at least a first peak, a second peak, a first bottom, and a second bottom.

[0027] The supporting glass substrate of the present invention preferably has a wafer shape or a substantially circular disk shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, a total thickness variation (TTV) of 5 μm or less, and a warpage of 60 μm or less. Here, "total thickness variation (TTV)" refers to the difference between the maximum thickness and the minimum thickness of the entire supporting glass substrate, and can be measured, for example, using an SBW-331ML / d manufactured by Kobelco Research Institute. "Warpage" refers to the sum of the absolute value of the maximum distance between the highest point and the least-squares focal plane and the absolute value of the distance between the lowest point and the least-squares focal plane on the entire supporting glass substrate, and can be measured, for example, using a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute.

[0028] The supporting glass substrate of the present invention preferably has a substantially rectangular shape of 200 mm or more, a thickness of 1.0 mm or more, and a total thickness variation (TTV) of 30 μm or less.

[0029] Furthermore, the supporting glass substrate of the present invention preferably has corners with an angle of 89.0 to 91.0° when viewed from above.

[0030] The supporting glass substrate of the present invention preferably has a positioning portion on its outer periphery, and the positioning portion is more preferably any one of a notch structure, a chamfered structure, and a cutout structure.

[0031] The laminate of the present invention is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is preferably the above-mentioned supporting glass substrate. The processed substrate preferably includes at least a semiconductor chip molded with a sealing material.

[0032] The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and a step of performing a processing treatment on the processing substrate, and it is preferable that the supporting glass substrate is the above-mentioned supporting glass substrate.

[0033] In addition, in the method for manufacturing a semiconductor package of the present invention, the processing step preferably includes a step of forming wiring on one surface of the processing substrate.

[0034] In addition, in the method for manufacturing a semiconductor package of the present invention, the processing step preferably includes a step of forming solder bumps on one surface of the processing substrate.

[0035] The glass substrate of the present invention is characterized by having a glass composition containing, in mole percent, 50-65% SiO2, 8-25% Al2O3, 0-10% B2O3, 5.1-20% Li2O, >10-16.1% Na2O, 0-15% K2O, 0.01-3% MgO, 0-10% CaO, and 0.01-10% ZrO2, and having a Young's modulus of 80 GPa or more. Here, "Young's modulus" refers to a value calculated using a method in accordance with JIS R1602-1995 "Testing Methods for Elastic Modulus of Fine Ceramics."

[0036] The glass substrate of the present invention has a glass composition containing, in mole percent, 50 to 65% SiO2, 8 to 18% Al2O3, 0 to 10% B2O3, 20 to 25% Li2O, 0.01 to 10% Na2O, 0 to 15% K2O, 0 to 10% MgO, 0.01 to 10% CaO, and 0 to 10% ZrO2, and has a Young's modulus of 85 GPa or more, a fracture toughness K 1C is 0.80 MPa m 0.5 The fracture toughness K 1C " indicates a value calculated using a method that complies with JIS R1607-2015 "Room temperature fracture toughness test method for fine ceramics."

[0037] The glass substrate of the present invention has a glass composition containing, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0 to 7% MgO, 0 to 7% CaO, 0 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10-7 / °C or less.

[0038] The glass substrate of the present invention has a glass composition containing, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0.01 to 7% MgO, 0.01 to 7% CaO, 0 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 / °C or less.

[0039] The glass substrate of the present invention has a glass composition containing, in mole percent, 64 to 76% SiO, 4 to 15% AlO, 4 to 16% BO, 0.1 to 14% LiO, 0.01 to 14% NaO, 0 to 15% KO, 0 to 7% MgO, 0 to 7% CaO, 0.01 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 / °C or less.

[0040] The glass substrate of the present invention has a glass composition containing, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0.01 to 7% MgO, 0.01 to 7% CaO, 0.01 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 / °C or less.

[0041] The glass substrate of the present invention has a glass composition containing, in mole percent, 64 to 76% SiO, 4 to 15% AlO, 4 to 16% BO, 1.5 to 8.5% LiO, 0.01 to 14% NaO, 0 to 15% KO, 0.01 to 7% MgO, 0.01 to 7% CaO, 0.01 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO, and has a Young's modulus of 60 GPa or more and an average coefficient of linear thermal expansion of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 / °C or less. [Brief explanation of the drawings]

[0042] [Figure 1] 1 is a conceptual perspective view showing an example of a laminated substrate of the present invention. [Figure 2] 1A to 1C are conceptual cross-sectional views showing the manufacturing process of a fan-out type WLP. [Figure 3] 10A and 10B are conceptual cross-sectional views showing a process of thinning a processed substrate by using a supporting glass substrate as a back-grinding substrate. [Figure 4] FIG. 2 is an explanatory diagram illustrating a stress profile having a first peak, a second peak, a first bottom, and a second bottom. [Figure 5] FIG. 10 is another explanatory diagram illustrating a stress profile having a first peak, a second peak, a first bottom, and a second bottom. DETAILED DESCRIPTION OF THE INVENTION

[0043] The supporting glass substrate of the present invention is made of lithium aluminosilicate glass, and the content of Li2O in the glass composition is 0.02 to 25 mol %. Li2O is a component that reduces high-temperature viscosity and improves meltability and formability, and also improves Young's modulus and fracture toughness K 1cLi2O is a component that increases the stress distribution. It is also a component necessary for increasing the thermal expansion coefficient. Furthermore, Li2O is an ion exchange component, and is an essential component for obtaining a deep stress depth by ion-exchanging the Li ions contained in the glass with the Na ions in the molten salt. On the other hand, if the Li2O content is too high, the devitrification tendency of the glass increases, making it difficult to obtain transparent glass and increasing production costs. Therefore, the preferred lower limit range of Li2O is 0.02 mol% or more, 0.03 mol% or more, 0.04 mol% or more, 0.05 mol% or more, 0.1 mol% or more, 0.2 mol% or more, 0.3 mol% or more, 0.4 mol% or more, 0.5 mol% or more, 0.9 mol% or more, 1 mol% or more, 1.5 mol% or more, 2 mol% or more, 3 mol% or more, 4 mol% or more, 4.5 mol% or more, 4.9 mol% or more, 5 mol% or more, 5.1 mol% or more, 5.2 mol% or more, 5.5 mol% or more, 6.5 mol% or more, 7 mol% or more, 7.3 mol% or more, 7.5 mol% or more, 7.8 mol% or more, and particularly 8 mol% or more. 1c When preferentially increasing the content of Li2O, the Li2O content is 15% or more, particularly 20% or more. Therefore, the upper limit of the Li2O content is preferably 25 mol% or less, 24 mol% or less, 23 mol% or less, 22 mol% or less, 21 mol% or less, 20.5 mol% or less, 20.1 mol% or less, 20 mol% or less, 19.9 mol% or less, 19.8 mol% or less, 19 mol% or less, 18 mol% or less, 17 mol% or less, 16 mol% or less, 15 mol% or less, 13 mol% or less, 12 mol% or less, 11.5 mol% or less, 11 mol% or less, 10.5 mol% or less, less than 10 mol%, 9.9 mol% or less, 9 mol% or less, 8.9 mol% or less, particularly 8.5% or less.

[0044] The thermal expansion coefficient of the supporting glass substrate is preferably regulated to match the thermal expansion coefficient of the processing substrate. Specifically, when the proportion of semiconductor chips in the processing substrate is small and the proportion of sealing material is large, it is preferable to increase the thermal expansion coefficient of the supporting glass substrate. Conversely, when the proportion of semiconductor chips in the processing substrate is large and the proportion of sealing material is small, it is preferable to decrease the thermal expansion coefficient of the supporting glass substrate. Therefore, the average linear thermal expansion coefficient of the supporting glass substrate in the temperature range of 30 to 380°C is 38 × 10 -7 / ℃ or more and 160×10 -7 / ℃ or less is preferable, and 45 × 10 -7 / ℃ or more and 155×10 -7 / ℃ or less, 50×10 -7 / ℃ or more and 150×10 -7 / ℃ or less, 55×10 -7 / ℃ or more and 140×10 -7 / ℃ or less, 60×10 -7 / ℃ or more and 130×10 -7 / ℃ or less, 65×10 -7 / ℃ or more and 120×10 -7 / ℃ or less, 65×10 -7 / ℃ or more and 110×10 -7 / ℃ or less, 70×10 -7 / ℃ or more and 105×10 -7 / ℃ or less, 75×10 -7 / ℃ or more and 100×10 -7 / ℃ or less, 80×10 -7 / ℃ or more and 99×10 -7 / ℃ or less, 85×10 -7 / ℃ or more and 98×10 -7 / °C or less, and particularly 87 × 10 -7 / ℃ or more and 96×10 -7 / ° C. or less. The "thermal expansion coefficient at 30 to 380° C." refers to a value obtained by measuring the average thermal expansion coefficient using a dilatometer.

[0045] The supporting glass substrate of the present invention preferably contains, in mole percent, 50 to 80% SiO2, 4 to 25% Al2O3, 0 to 16% B2O3, 0.9 to 15% Li2O, greater than 0 to 21% Na2O, 0 to 15% K2O, 0 to 10% MgO, 0 to 10% ZnO, and 50 to 15% P2O as a glass composition. In the following description of the content range of each component, % means mole percent.

[0046] SiO2 is a component that forms the glass network. If the SiO2 content is too low, vitrification becomes difficult, and the thermal expansion coefficient becomes too high, which tends to reduce thermal shock resistance. Therefore, the preferred lower limit range of SiO2 is 50% or more, 55% or more, 57% or more, 59% or more, and particularly 61% or more. On the other hand, if the SiO2 content is too high, meltability and formability tend to decrease, and the thermal expansion coefficient becomes too low, making it difficult to match the thermal expansion coefficient of surrounding materials. Therefore, the preferred upper limit range of SiO2 is 80% or less, 70% or less, 68% or less, 66% or less, 65% or less, and particularly 64.5% or less.

[0047] Al2O3 is a component that increases the strain point, Young's modulus, fracture toughness, and Vickers hardness, and also enhances ion exchange performance. Therefore, the preferred lower limit of Al2O3 is 4% or more, 8% or more, 10% or more, 12% or more, 13% or more, 14% or more, 14.4% or more, 15% or more, 15.3% or more, 15.6% or more, 16% or more, 16.5% or more, 17% or more, 17.5% or more, 18% or more, more than 18%, and particularly 18.5% or more. On the other hand, if the Al2O3 content is too high, the high-temperature viscosity increases, which tends to reduce meltability and formability. In addition, devitrification crystals tend to precipitate in the glass, making it difficult to form it into a plate shape using the overflow downdraw method or the like. In particular, when an alumina-based refractory is used as the formed refractory to form a glass substrate by the overflow downdraw method, spinel devitrification crystals are likely to precipitate at the interface with the alumina-based refractory. Furthermore, acid resistance is also reduced, making it difficult to apply to an acid treatment process. Therefore, the preferred upper limit range of Al2O3 is 25% or less, 21% or less, 20.5% or less, 20% or less, 19.9% ​​or less, 19.5% or less, 19.0% or less, and particularly 18.9% or less. By setting the Al2O3 content, which has a significant impact on ion exchange performance, within a preferred range, it becomes easier to form a profile with a first peak, a second peak, a first bottom, and a second bottom.

[0048] B2O3 is a component that reduces the high-temperature viscosity and density, stabilizes the glass, makes it difficult for crystals to precipitate, and lowers the liquidus temperature. If the B2O3 content is too low, the glass may become unstable and devitrification resistance may decrease. Therefore, the preferred lower limit range of B2O3 is 0% or more, 0.1% or more, 0.2% or more, 0.5% or more, 0.6% or more, 0.7% or more, 0.8% or more, 0.9% or more, and particularly 1% or more. On the other hand, if the B2O3 content is too high, the stress depth may become shallow. In particular, the efficiency of ion exchange between Na ions contained in the glass and K ions in the molten salt is likely to decrease, and the stress depth of the compressive stress layer (DOL_ZERO K ) tends to become small. Therefore, the preferred upper limit range of B2O3 is 16% or less, 14% or less, 12% or less, 10% or less, 5% or less, 4% or less, 3.8% or less, 3.5% or less, 3.3% or less, 3.2% or less, 3.1% or less, 3% or less, particularly 2.9% or less. If the B2O3 content is within the preferred range, it becomes easier to form a profile having a first peak, a second peak, a first bottom, and a second bottom.

[0049] The content and effects of Li2O are as described above.

[0050] Na2O is an ion-exchange component and a component that reduces high-temperature viscosity and improves meltability and formability. Na2O also improves devitrification resistance, particularly suppressing devitrification caused by reaction with alumina-based refractories. Na2O also increases the thermal expansion coefficient. Therefore, the preferred lower limit of Na2O is more than 0%, 3% or more, 4% or more, 5% or more, 6% or more, 7% or more, 7.5% or more, 8% or more, 8.5% or more, 8.8% or more, 9% or more, and particularly more than 10%. On the other hand, if the Na2O content is too high, the thermal expansion coefficient becomes too high, which can lead to a decrease in thermal shock resistance. Furthermore, the component balance of the glass composition may be disrupted, which may actually reduce devitrification resistance. Therefore, the preferred upper limit of Na2O is 21% or less, 20% or less, 19% or less, particularly 18% or less, 16.1% or less, 14% or less, 15% or less, 13% or less, and particularly 11% or less.

[0051] K2O is a component that reduces high-temperature viscosity and improves meltability and moldability. However, if the K2O content is too high, the thermal expansion coefficient becomes too high, which tends to reduce thermal shock resistance. It also tends to reduce the compressive stress value of the outermost surface. K2O also increases the thermal expansion coefficient. Therefore, the preferred upper limit of K2O is 15% or less, 10% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, 1.5% or less, 1% or less, less than 1%, 0.5% or less, and particularly less than 0.1%. From the perspective of increasing the stress depth, the preferred lower limit of K2O is 0% or more, 0.1% or more, 0.3% or more, and particularly 0.5% or more.

[0052] The molar ratio [Li2O] / ([Na2O]+[K2O]) is preferably 0.0 to 15.4, 0.1 to 10.0, 0.2 to 5.0, 0.3 to 3.0, 0.4 to 1.0, or 0.5 to 0.9, particularly 0.6 to 0.8. If the molar ratio [Li2O] / ([Na2O]+[K2O]) is too small, there is a risk that the ion exchange performance will not be fully exhibited. In particular, the efficiency of ion exchange between Li ions contained in the glass and Na ions in the molten salt is likely to decrease. On the other hand, if the molar ratio [Li2O] / ([Na2O]+[K2O]) is too large, devitrification crystals are likely to precipitate in the glass, making it difficult to form the glass into a plate shape by the overflow downdraw method or the like. It should be noted that "[Li2O] / ([Na2O]+[K2O])" refers to the value obtained by dividing the content of Li2O by the total amount of Na2O and K2O.

[0053] MgO is a component that reduces high-temperature viscosity, improves meltability and formability, and increases strain point and Vickers hardness. Among alkaline earth metal oxides, MgO is a component that is particularly effective in improving ion exchange performance. However, if the MgO content is too high, devitrification resistance tends to decrease, and it becomes particularly difficult to suppress devitrification caused by reaction with alumina-based refractories. Therefore, the preferred MgO content is 0 to 10%, 0.01 to 7%, 0.05 to 5%, 0.1 to 4%, or 0.2 to 3.5%, and particularly 0.5 to less than 3%.

[0054] ZnO is a component that enhances ion exchange performance, particularly increasing the compressive stress value of the outermost surface. It also reduces high-temperature viscosity without reducing low-temperature viscosity. The preferred lower limit of ZnO is 0% or more, 0.1% or more, 0.3% or more, 0.5% or more, 0.7% or more, and particularly 1% or more. On the other hand, if the ZnO content is too high, the glass tends to undergo phase separation, reduce devitrification resistance, increase density, and reduce stress depth. Therefore, the preferred upper limit of ZnO is 10% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2% or less, 1.5% or less, 1.3% or less, 1.2% or less, and particularly 1.1% or less.

[0055] P2O5 is a component that enhances ion exchange performance, particularly deepening the stress depth. It also improves acid resistance. If the P2O5 content is too low, there is a risk that the ion exchange performance will not be fully demonstrated. In particular, the efficiency of ion exchange between Na ions contained in the glass and K ions in the molten salt is likely to decrease, and the stress depth of the compressive stress layer (DOL_ZERO K ) tends to become small. In addition, the glass may become unstable, resulting in a decrease in devitrification resistance. Therefore, the preferred lower limit range of P2O5 is 0% or more, 0.1% or more, 0.4% or more, 0.7% or more, 1% or more, 1.2% or more, 1.4% or more, 1.6% or more, 2% or more, 2.3% or more, 2.5% or more, and particularly 3% or more. On the other hand, if the P2O5 content is too high, the glass is prone to phase separation and water resistance is likely to decrease. In addition, the stress depth due to ion exchange between Li ions contained in the glass and Na ions in the molten salt becomes too deep, resulting in a decrease in the compressive stress value (CS Na ) tends to become small. Therefore, the preferred upper limit range of P2O5 is 15% or less, 10% or less, 5% or less, 4.5% or less, and particularly 4% or less. If the P2O5 content is within the preferred range, it becomes easier to form a non-monotonic profile.

[0056] Alkali metal oxides are ion-exchange components that reduce high-temperature viscosity and improve meltability and moldability. Therefore, the preferred lower limit of the alkali metal oxide ([LiO] + [NaO] + [KO]) content is 5% or more, 6% or more, 7% or more, 8% or more, 9% or more, 10% or more, 11% or more, 12% or more, 13% or more, 14% or more, and particularly 15% or more. However, if the alkali metal oxide content ([LiO] + [NaO] + [KO]) is too high, the thermal expansion coefficient may increase and acid resistance may decrease. Therefore, the preferred upper limit of the alkali metal oxide ([LiO] + [NaO] + [KO]) content is 28% or less, 25% or less, 23% or less, 20% or less, 19% or less, and particularly 18% or less.

[0057] The molar ratio [Li2O] / [P2O5] is preferably 0 or greater, 0.1 to 30, 0.5 to 29, 0.9 to 28, 3.8 to 27, 4 to 26, 10 to 25, and particularly 15 to 20. If the molar ratio [Li2O] / [P2O5] is too small, the efficiency of ion exchange between the Li ions contained in the glass and the Na ions in the molten salt tends to decrease. On the other hand, if the molar ratio [Li2O] / [P2O5] is too large, devitrification crystals tend to precipitate in the glass, making it difficult to form the glass into a plate shape using an overflow downdraw method or the like. Here, "[Li2O] / [P2O5]" refers to the value obtained by dividing the Li2O content by the P2O5 content.

[0058] The molar ratio ([NaO] - [LiO]) / ([AlO] + [BO] + [PO]) is preferably 1.50 or less, 0.70 or less, 0.50 or less, 0.30 or less, 0.29 or less, 0.27 or less, 0.26 or less, 0.25 or less, 0.23 or less, 0.20 or less, and particularly 0.15 or less. If the molar ratio ([NaO] - [LiO]) / ([AlO] + [BO] + [PO]) is too large, there is a risk that the ion exchange performance will not be fully exhibited. In particular, the efficiency of ion exchange between Li ions contained in the glass and Na ions in the molten salt is likely to decrease.

[0059] The molar ratio ([B2O3] + [Na2O] - [P2O5]) / ([Al2O3] + [Li2O]) is preferably 0.001 or more, 0.05 or more, 0.15 or more, 0.25 or more, 0.30 or more, 0.35 or more, 0.40 or more, 0.42 or more, 0.43 or more, and particularly preferably 0.45 or more. If the molar ratio ([B2O3] + [Na2O] - [P2O5]) / ([Al2O3] + [Li2O]) is too small, devitrification crystals tend to precipitate in the glass, making it difficult to form the glass into a plate by the overflow downdraw method or the like.

[0060] The ratio ([SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3]) is preferably at least −40%, at least −30%, at least −25%, at least −22%, and particularly at least −20%. If the ratio ([SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3]) is too small, acid resistance is likely to decrease. On the other hand, if the ratio ([SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3]) is too large, there is a risk that the ion exchange performance will not be fully exhibited. Therefore, ([SiO2] + 1.2 × [P2O5] - 3 × [Al2O3] - 2 × [Li2O] - 1.5 × [Na2O] - [K2O] - [B2O3]) is preferably 50% or less, 40% or less, 30% or less, 20% or less, 15% or less, 10% or less, 5% or less, and particularly 0% or less.

[0061] In addition to the above components, the following components may also be added:

[0062] Compared to other components, CaO reduces high-temperature viscosity, improves meltability and formability, and increases strain point and Vickers hardness without reducing devitrification resistance. However, if the CaO content is too high, there is a risk of reducing ion exchange performance and degrading the ion exchange solution during ion exchange treatment. Therefore, the preferred upper limit of CaO content is 10% or less, 8% or less, 7% or less, 6% or less, 5% or less, 4% or less, 3.5% or less, 3% or less, 2% or less, 1% or less, less than 1%, or 0.5% or less, particularly 0.01 to less than 0.1%.

[0063] SrO and BaO are components that reduce high-temperature viscosity, improve meltability and formability, and increase the strain point and Young's modulus, but if their contents are too high, the ion exchange reaction is likely to be inhibited, the density and thermal expansion coefficient become unduly high, and the glass is likely to devitrify. Therefore, the preferred contents of SrO and BaO are 0 to 7%, 0 to 5%, 0 to 3%, 0 to 2%, 0 to 1.5%, 0 to 1%, 0 to 0.5%, and 0 to 0.1%, and particularly 0.01 to less than 0.1%, respectively.

[0064] ZrO2 is a component that increases Vickers hardness and also increases viscosity near the liquidus viscosity and strain point, but if its content is too high, there is a risk that devitrification resistance will be significantly reduced. Therefore, the preferred ZrO2 content is 0 to 5%, 0 to 4%, 0 to 3%, 0 to 1.5%, 0 to 1%, and particularly 0.01 to 0.1%.

[0065] TiO2 is a component that enhances ion exchange performance and reduces high-temperature viscosity, but if its content is too high, transparency and devitrification resistance tend to decrease. Therefore, the preferred TiO2 content is 0 to 3%, 0 to 1.5%, 0 to 1%, 0 to 0.1%, and particularly 0.001 to 0.1 mol%.

[0066] SnO2 is a component that improves ion exchange performance, but if its content is too high, devitrification resistance tends to decrease. Therefore, the lower limit of SnO2 is preferably 0.005% or more, 0.01% or more, and particularly 0.1% or more, and the upper limit is preferably 3% or less, 2% or less, and particularly 1% or less.

[0067] Cl is a fining agent, but if its content is too high, it can have a negative impact on the environment and equipment. Therefore, the preferred lower limit of Cl is 0.001% or more, particularly 0.01% or more, and the preferred upper limit is 0.3% or less, 0.2% or less, particularly 0.1% or less.

[0068] As a fining agent, one or more selected from the group consisting of SO3 and CeO2 (preferably SO3) may be added in an amount of 0.001 to 1%.

[0069] Fe2O3 is an impurity that is inevitably mixed in from raw materials. The preferred upper limit of Fe2O3 is 2000 ppm or less (0.2% or less), 1500 ppm or less (0.15% or less), less than 1000 ppm (less than 0.1%), less than 800 ppm, less than 600 ppm, less than 400 ppm, and particularly less than 300 ppm. If the Fe2O3 content is too high, the transmittance of the cover glass is likely to decrease. On the other hand, the preferred lower limit of Fe2O3 is 10 ppm or more, 20 ppm or more, 30 ppm or more, 50 ppm or more, 80 ppm or more, or 100 ppm or more. If the Fe2O3 content is too low, the raw material cost rises due to the need for high-purity raw materials, making it impossible to manufacture the product at low cost.

[0070] Rare earth oxides such as Nd2O3, La2O3, Y2O3, Nb2O5, Ta2O5, and Hf2O3 are components that increase Young's modulus. However, the raw material cost is high, and adding large amounts can easily reduce devitrification resistance. Therefore, the preferred content of rare earth oxides is 5% or less, 3% or less, 2% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.

[0071] From an environmental perspective, the supporting glass substrate of the present invention preferably contains substantially no As2O3, Sb2O3, PbO, or F in its glass composition. Also, from an environmental perspective, it preferably contains substantially no Bi2O3. The phrase "substantially does not contain..." means that the specified components are not actively added as glass components, but impurity-level addition is permitted, specifically referring to a case where the content of the specified components is less than 0.05%.

[0072] The supporting glass substrate of the present invention preferably has the following properties.

[0073] The supporting glass substrate of the present invention has a high-temperature viscosity of 10 2.5 The temperature at dPa·s is preferably less than 1800°C, more preferably less than 1660°C, 1640°C or less, 1620°C or less, 1600°C or less, and particularly preferably 1400 to 1590°C. 2.5 If the temperature at dPa·s is too high, the melting property and formability decrease, making it difficult to form the molten glass into a sheet.

[0074] The density is preferably 2.80 g / cm 3 Below 2.70g / cm 3 Below, 2.60g / cm 3 Below, 2.58g / cm 3 Below, 2.56g / cm 3 Below 2.55g / cm 3 Below, 2.53g / cm 3 Below 2.50g / cm 3 Below, 2.49g / cm 3 Below, 2.45g / cm 3 Below, especially 2.35 to 2.44 g / cm 3 The lower the density, the lighter the tempered glass substrate can be.

[0075] The softening point is preferably 985° C. or less, 970° C. or less, 950° C. or less, 930° C. or less, 900° C. or less, 880° C. or less, 860° C. or less, particularly 850 to 700° C. The "softening point" refers to a value measured based on the method of ASTM C338.

[0076] The liquidus viscosity is preferably 10 3.0 That's it, 10 3.2 That's it, 10 3.4 That's it, 10 3.6 That's it, 10 3.74 dPa·s or more, 10 4.5 dPa·s or more, 10 4.8 dPa·s or more, 10 4.9 dPa·s or more, 105.0 dPa·s or more, 10 5.1 dPa·s or more, 10 5.2 dPa·s or more, 10 5.3 dPa·s or more, 10 5.4 dPa·s or more, especially 10 5.5 It is dPa·s or higher. The higher the liquidus viscosity, the better the resistance to devitrification, and the less likely devitrification particles will occur during molding. Here, "liquidus viscosity" refers to the value of the viscosity at the liquidus temperature measured using the platinum ball pull-up method. "Liquidus temperature" is defined as the highest temperature at which devitrification (devitrification particles) is observed inside the glass when glass powder that passes through a standard 30 mesh (500 μm) sieve and remains on the 50 mesh (300 μm) sieve is placed in a platinum boat and held in a temperature gradient furnace for 24 hours, after which the platinum boat is removed and observed under a microscope.

[0077] The Young's modulus is preferably 63 GPa or more, 65 GPa or more, 68 GPa or more, 70 GPa or more, 74 GPa or more, 75 to 100 GPa, 80 to 95 GPa, particularly 85 to 90 GPa. If the Young's modulus is low, the supporting glass substrate is easily broken. Furthermore, if the supporting glass substrate is thin, it is easily bent.

[0078] Fracture toughness K 1c is preferably 0.80 MPa m 0.5 More than 0.81MPa m 0.5 More than 0.82MPa m 0.5 More than 0.83MPa m 0.5 More than 0.84MPa m 0.5 Above 0.85 MPa m 0.5 That's all. Fracture toughness K 1c If the temperature is low, the supporting glass substrate is easily damaged.

[0079] In the supporting glass substrate of the present invention, the mass loss per unit surface area when immersed in a 5 mass % HCl aqueous solution heated to 80°C for 24 hours is preferably 100.0 mg / cm 2 Below, 90mg / cm 2 Below 80mg / cm 2 Below, 70mg / cm 2 Below 60mg / cm 2Below, 50mg / cm 2 Below 40mg / cm 2 Below 30mg / cm 2 Below, especially 20 mg / cm 2 The supporting glass substrate may come into contact with an acidic chemical solution in the semiconductor package manufacturing process, and therefore, it is preferable that the supporting glass substrate has high acid resistance in order to prevent process defects.

[0080] The mass loss per unit surface area when immersed in a 5% by mass NaOH aqueous solution heated to 80°C for 6 hours is preferably 5.0 mg / cm 2 Below, 4.9mg / cm 2 Below, 4.8mg / cm 2 Below, 4.7mg / cm 2 Below, 4.6mg / cm 2 Below, 4.5mg / cm 2 Below, 4.0mg / cm 2 Below 3.0mg / cm 2 Below, especially 2.0 mg / cm 2 The supporting glass substrate is often recycled after being washed during the semiconductor package manufacturing process. In this process, the supporting glass substrate may come into contact with alkaline chemicals or detergents, so it is required to have high alkali resistance.

[0081] The supporting glass substrate of the present invention preferably has the following shape.

[0082] The supporting glass substrate of the present invention is preferably in the shape of a wafer or a substantially circular disk, with a diameter of 100 mm to 500 mm, particularly 150 mm to 450 mm. This facilitates application to the manufacturing process of a fan-out WLP. If necessary, it may be processed into other shapes, such as a rectangular shape.

[0083] The supporting glass substrate of the present invention is preferably substantially rectangular, with dimensions of 200 mm or more, preferably 220 to 750 mm, and particularly preferably 250 to 500 mm. This facilitates application to the manufacturing process of fan-out type PLP (panel level package). If necessary, it may be processed into other shapes, such as a triangle or a trapezoid.

[0084] The plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. The thinner the plate thickness, the lighter the mass of the laminated substrate, improving handleability. On the other hand, if the plate thickness is too thin, the strength of the supporting glass substrate itself decreases, making it difficult for the supporting substrate to function. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.

[0085] The total thickness variation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less, particularly 0.1 to less than 1 μm. The arithmetic mean roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, or 1 nm or less, particularly 0.5 nm or less. The higher the surface precision, the easier it is to improve the processing precision. In particular, wiring precision can be improved, enabling high-density wiring. In addition, the strength of the supporting glass substrate is improved, making the supporting glass substrate and laminate substrate less susceptible to breakage. Furthermore, the number of times the supporting glass substrate can be reused can be increased. The "arithmetic mean roughness Ra" can be measured using a stylus surface roughness meter or an atomic force microscope (AFM).

[0086] The amount of warping is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warping, the easier it is to improve the processing accuracy. In particular, wiring accuracy can be improved, enabling high-density wiring.

[0087] In the case of a wafer or approximately disk shape, the circularity is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the circularity, the easier it is to apply to the manufacturing process of a fan-out type WLP. Note that "circularity" is the value obtained by subtracting the minimum value from the maximum value of the outer shape, excluding the notch structure.

[0088] The supporting glass substrate of the present invention preferably includes a positioning portion, and the positioning portion is preferably any one of a notch structure, a chamfered structure, and a notch structure, and more preferably a notch structure, and the deep portion of the notch structure is generally circular or generally V-groove-shaped in plan view. This makes it easy to fix the position of the supporting glass substrate by abutting a positioning member such as a positioning pin against the notch structure of the supporting glass substrate. As a result, it becomes easy to align the supporting glass substrate with the processing substrate. In particular, forming a notch structure in the processing substrate and abutting the positioning member thereon makes it easy to align the entire laminated substrate. Note that a notch structure is prone to cracking due to the abutment of the positioning member, but the supporting glass substrate of the present invention is particularly effective when it has a notch structure because of its high strength.

[0089] When a positioning member is brought into contact with the notch structure of the supporting glass substrate, stress tends to concentrate in the notch structure, making the supporting glass substrate more susceptible to breakage starting from the notch structure. This tendency is particularly pronounced when the supporting glass substrate is curved by an external force. Therefore, it is preferable that the supporting glass substrate of the present invention has all or part of the edge region where the surface of the notch structure intersects with the end face be chamfered. This effectively prevents breakage starting from the notch structure.

[0090] In the wafer-shaped or approximately disk-shaped support glass substrate of the present invention, all or part of the edge region where the surface of the notch structure intersects with the edge face is chamfered, preferably 50% or more of the edge region where the surface of the notch structure intersects with the edge face is chamfered, more preferably 90% or more of the edge region where the surface of the notch structure intersects with the edge face is chamfered, and even more preferably the entire edge region where the surface of the notch structure intersects with the edge face is chamfered. The larger the chamfered region in the notch structure, the more likely it is that breakage originating from the notch structure will be reduced.

[0091] The chamfer width of the notch structure in the surface direction is preferably 50 to 900 μm, 200 to 800 μm, 300 to 700 μm, or 400 to 650 μm, particularly 500 to 600 μm. If the chamfer width of the notch structure in the surface direction is too small, the supporting glass substrate is likely to be damaged starting from the notch structure. On the other hand, if the chamfer width of the notch structure in the surface direction is too large, the chamfering efficiency decreases, which tends to increase the manufacturing cost of the supporting glass substrate.

[0092] The chamfer width in the thickness direction of the notch structure is preferably 5 to 80%, 20 to 75%, 30 to 70%, 35 to 65%, and particularly 40 to 60% of the thickness. If the chamfer width in the thickness direction of the notch structure is too small, the supporting glass substrate is likely to be damaged starting from the notch structure. On the other hand, if the chamfer width in the thickness direction of the notch structure is too large, external forces are likely to be concentrated on the end faces of the notch structure, and the supporting glass substrate is likely to be damaged starting from the end faces of the notch structure.

[0093] In the case of a substantially rectangular shape, the angle of the corners when viewed from above, i.e., when the supporting glass substrate is viewed in plan, is preferably 89.0 to 91.0°, 89.1 to 90.9°, 89.2 to 90.8°, 89.3 to 90.7°, 89.4 to 90.6°, and particularly 89.5 to 90.5°. The closer the corner angle is to 90°, the more accurately the supporting glass substrate can be positioned during transportation.

[0094] The supporting glass substrate of the present invention preferably has an information identification portion having dots as constituent units on the surface of the supporting glass substrate. The information identification portion has one or more elements selected from characters, symbols, two-dimensional codes, and graphics, and the elements are composed of a plurality of dots. The information identification portion preferably includes at least one piece of information selected from the dimensions of the supporting glass substrate, the linear thermal expansion coefficient, the lot, the total thickness variation (TTV), the manufacturer's name, the distributor's name, and the material code. Note that "dimensions" include the thickness dimension, outer diameter dimension, and notch structure dimension of the supporting glass substrate.

[0095] The outer diameter of the dot is preferably 0.05 to 0.20 mm, 0.07 to 0.13 mm, and particularly 0.09 to 0.11 mm. If the outer diameter of the dot is too small, the visibility of the information identifying portion is likely to decrease. On the other hand, if the outer diameter of the dot is too large, it becomes easier to ensure the strength of the supporting glass substrate.

[0096] The center-to-center distance between adjacent dots is preferably 0.06 to 0.25 mm. If the center-to-center distance between adjacent dots is too small, it becomes easier to ensure the strength of the supporting glass substrate. On the other hand, if the center-to-center distance between adjacent dots is too large, the visibility of the information identification portion is likely to decrease.

[0097] The information identification section preferably has dots as its constituent units, and the dots are preferably shaped like annular grooves. When the dots are shaped like annular grooves, the area surrounded by the annular grooves (the area inside the grooves) remains without being removed by the laser, making it possible to minimize a decrease in strength of the area where the information identification section is provided. Furthermore, with an annular groove, reducing the width of the groove does not significantly reduce visibility as long as the outer diameter remains unchanged. Therefore, by reducing the width of the groove without changing its outer diameter, the area inside the grooves can be enlarged accordingly, thereby ensuring visibility while maintaining the required strength.

[0098] The depth of the grooves forming the dots is preferably 2 to 30 μm. If the groove depth is too small, the visibility of the information identification portion is likely to decrease. On the other hand, if the groove depth is too large, it becomes easier to ensure the strength of the supporting glass substrate.

[0099] The information identification portion can be formed by various methods, but it is preferable to form the information identification portion by irradiating the glass in the irradiated area with a pulsed laser and ablating the glass, i.e., by laser ablation. In this way, ablation can be caused without accumulating excessive heat in the glass in the irradiated area. As a result, it is possible to reduce not only the length of cracks in the thickness direction but also the length of cracks extending from the dots in the surface direction.

[0100] The supporting glass substrate of the present invention is preferably produced by preparing and mixing glass raw materials to prepare a glass batch, charging the glass batch into a glass melting furnace, fining and stirring the resulting molten glass, and then supplying it to a forming device and forming it into a plate shape.

[0101] The support glass substrate of the present invention preferably has an overflow confluence surface at the center in the thickness direction. In the overflow downdraw method, the surface that will become the surface of the support glass substrate does not contact the trough-shaped refractory and is formed in a free surface state. Therefore, with a small amount of polishing, the overall thickness deviation can be reduced to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of the support glass substrate can be reduced.

[0102] The supporting glass substrate of the present invention is preferably formed by an overflow downdraw method and then has its surface polished, which makes it easier to regulate the overall thickness deviation to less than 2.0 μm, 1.5 μm or less, 1.0 μm or less, particularly 0.1 to 1.0 μm.

[0103] The support glass substrate of the present invention preferably has a compressive stress layer on the glass surface, and more preferably has a compressive stress layer formed by ion exchange. Forming a compressive stress layer on the glass surface can reduce the probability of breakage of the support glass substrate when the laminated substrate is dropped to the ground.

[0104] In the support glass substrate of the present invention, the compressive stress value of the outermost surface of the compressive stress layer is preferably 165 to 1000 MPa, 200 MPa or more, 220 MPa or more, 250 MPa or more, 280 MPa or more, 300 MPa or more, 310 MPa or more, and particularly 320 MPa or more. The higher the compressive stress value of the outermost surface, the higher the Vickers hardness. On the other hand, if an extremely large compressive stress is formed on the surface, the tensile stress inherent in the support glass substrate becomes extremely high, and there is a risk of significant dimensional change before and after ion exchange treatment. Therefore, the compressive stress value of the outermost surface is preferably 1000 MPa or less, 900 MPa or less, 700 MPa or less, 680 MPa or less, 650 MPa or less, and particularly 600 MPa or less. Note that shortening the ion exchange time or lowering the temperature of the ion exchange solution tends to increase the compressive stress value of the outermost surface.

[0105] The stress depth of the compressive stress layer is preferably 50 to 200 μm, 50 μm or more, 60 μm or more, 80 μm or more, 100 μm or more, and particularly 120 μm or more. The deeper the stress depth, the more difficult it is for protrusions on the ground to reach the tensile stress layer of the supporting glass substrate when the laminated substrate is dropped, thereby reducing the probability of breakage of the supporting glass substrate. On the other hand, if the stress depth is too deep, there is a risk of significant dimensional change before and after the ion exchange treatment. Furthermore, the compressive stress value of the outermost surface tends to decrease. Therefore, the stress depth is preferably 200 μm or less, 180 μm or less, 150 μm or less, and particularly 140 μm or less. Note that the stress depth tends to deepen if the ion exchange time is extended or the temperature of the ion exchange solution is increased.

[0106] The ion exchange treatment is preferably performed multiple times. The multiple ion exchange treatments preferably include immersion in a molten salt containing KNO molten salt followed by immersion in a molten salt containing NaNO molten salt. This allows for increased compressive stress at the outermost surface while maintaining a deep stress depth.

[0107] In particular, it is preferable to perform an ion exchange treatment (first ion exchange step) by immersing the substrate in a NaNO3 molten salt or a mixed molten salt of NaNO3 and KNO3, followed by an ion exchange treatment (second ion exchange step) by immersing the substrate in a mixed molten salt of KNO3 and LiNO3. This makes it possible to form the non-monotonic stress profile shown in Figures 4 and 5, i.e., a stress profile having at least a first peak, a second peak, a first bottom, and a second bottom. As a result, it is possible to significantly reduce the probability of breakage of the supporting glass substrate when the laminated substrate is dropped.

[0108] In the first ion exchange process, Li ions contained in the glass undergo ion exchange with Na ions contained in the molten salt. When a mixture of NaNO3 and KNO3 is used, Na ions contained in the glass also undergo ion exchange with K ions contained in the molten salt. The ion exchange between Li ions contained in the glass and Na ions in the molten salt is faster and more efficient than the ion exchange between Na ions contained in the glass and K ions in the molten salt. In the second ion exchange process, Na ions near the glass surface (a shallow region from the outermost surface to 20% of the plate thickness) undergo ion exchange with Li ions in the molten salt. Additionally, Na ions near the glass surface (a shallow region from the outermost surface to 20% of the plate thickness) also undergo ion exchange with K ions in the molten salt. In other words, the second ion exchange process can remove Na ions near the glass surface while introducing K ions with a large ionic radius. As a result, the compressive stress value at the outermost surface can be increased while maintaining a deep stress depth.

[0109] In the first ion exchange step, the temperature of the molten salt is preferably 360 to 400°C, and the ion exchange time is preferably 30 minutes to 6 hours. In the second ion exchange step, the temperature of the ion exchange solution is preferably 370 to 400°C, and the ion exchange time is preferably 15 minutes to 3 hours.

[0110] In order to form a non-monotonic stress profile, it is preferable that the NaNO3 concentration be higher than the KNO3 concentration in the mixed molten salt of NaNO3 and KNO3 used in the first ion exchange step, and it is preferable that the KNO3 concentration be higher than the LiNO3 concentration in the mixed molten salt of KNO3 and LiNO3 used in the second ion exchange step.

[0111] In the mixed molten salt of NaNO3 and KNO3 used in the first ion exchange step, the KNO3 concentration is preferably 0 mass% or more, 0.5 mass% or more, 1 mass% or more, 5 mass% or more, 7 mass% or more, 10 mass% or more, 15 mass% or more, and particularly 20 to 90 mass%. If the KNO3 concentration is too high, the compressive stress value formed during ion exchange between Li ions contained in the glass and Na ions in the molten salt may be too low. On the other hand, if the KNO3 concentration is too low, stress measurement using the surface stress meter FSM-6000 may become difficult.

[0112] In the mixed molten salt of KNO3 and LiNO3 used in the second ion exchange step, the LiNO3 concentration is preferably greater than 0 to 5 mass%, greater than 0 to 3 mass%, greater than 0 to 2 mass%, and particularly 0.1 to 1 mass%. If the LiNO3 concentration is too low, Na ions near the glass surface are less likely to be released. On the other hand, if the LiNO3 concentration is too high, the compressive stress value formed by ion exchange between Na ions near the glass surface and K ions in the molten salt may be too low.

[0113] The laminated substrate of the present invention is a laminated substrate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate, characterized in that the supporting glass substrate is the supporting glass substrate described above. The laminated substrate of the present invention preferably has an adhesive layer between the processing substrate and the supporting glass substrate. The adhesive layer is preferably a resin, such as a thermosetting resin or a photocurable resin (particularly a UV-curable resin). It is also preferable that the adhesive layer has heat resistance sufficient to withstand the heat treatment in the manufacturing process of a fan-out WLP. This makes the adhesive layer less likely to melt in the manufacturing process of a fan-out WLP, thereby improving the accuracy of the processing process. UV-curable tape can also be used as the adhesive layer to easily fix the processing substrate and the supporting glass substrate.

[0114] The laminated substrate of the present invention preferably further comprises a release layer between the processing substrate and the supporting glass substrate, more specifically, between the processing substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. This facilitates the separation of the processing substrate from the supporting glass substrate after the processing substrate has been subjected to a predetermined processing treatment. From the viewpoint of productivity, the separation of the processing substrate is preferably performed by irradiation with light such as laser light. Infrared laser light sources such as YAG lasers (wavelength 1064 nm) and semiconductor lasers (wavelength 780 to 1300 nm) can be used as laser light sources. Furthermore, resins that decompose upon irradiation with an infrared laser can be used for the release layer. Furthermore, a substance that efficiently absorbs infrared light and converts it to heat can be added to the resin. For example, carbon black, graphite powder, fine metal powder, dyes, pigments, etc. can be added to the resin.

[0115] The release layer is made of a material that undergoes "intralayer peeling" or "interfacial peeling" when irradiated with light such as laser light. In other words, when irradiated with light of a certain intensity, the interatomic or intermolecular bonding forces between atoms or molecules disappear or decrease, causing ablation or other such phenomena, resulting in peeling. Irradiation with light can cause components contained in the release layer to turn into gas and be released, leading to separation, or the release layer can absorb light, turn into gas, and then release the vapor, leading to separation.

[0116] In the laminated substrate of the present invention, the supporting glass substrate is preferably larger than the processing substrate, so that when the processing substrate is supported, even if the centers of the two are slightly separated, the edge of the processing substrate is less likely to protrude from the supporting glass substrate.

[0117] The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminated substrate having at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and a step of performing a processing treatment on the processing substrate, and is characterized in that the supporting glass substrate is the above-mentioned supporting glass substrate.

[0118] The method for manufacturing a semiconductor package of the present invention preferably further includes a step of transporting the laminated substrate. This can improve the processing efficiency. Note that the "step of transporting the laminated substrate" and the "step of performing processing on the processed substrate" do not need to be performed separately and may be performed simultaneously.

[0119] In the semiconductor package manufacturing method of the present invention, the processing is preferably a process of wiring one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the semiconductor package manufacturing method of the present invention, these steps can be carried out appropriately because the processed substrate is less likely to change in size during these processes.

[0120] In addition to the above, the processing may be any of the following: mechanical polishing of one surface of the processing substrate (usually the surface opposite the supporting glass substrate), dry etching of one surface of the processing substrate (usually the surface opposite the supporting glass substrate), and wet etching of one surface of the processing substrate (usually the surface opposite the supporting glass substrate). The semiconductor package manufacturing method of the present invention makes it difficult for the processing substrate to warp, and can maintain the rigidity of the laminated substrate. As a result, the above processing can be performed appropriately.

[0121] The present invention will be further explained with reference to the drawings.

[0122] Fig. 1 is a conceptual perspective view showing an example of a laminated substrate 1 of the present invention. In Fig. 1, the laminated substrate 1 includes a supporting glass substrate 10 and a processing substrate 11. The supporting glass substrate 10 is attached to the processing substrate 11 to prevent dimensional changes of the processing substrate 11. The supporting glass substrate 10 is a lithium aluminosilicate glass having a Li2O content of 0.02 to 25 mol% in the glass composition and an average linear thermal expansion coefficient of 45 × 10 in the temperature range of 30 to 380°C. -7 / ℃ or more and 160×10 -7 / °C or less. In addition, a release layer 12 and an adhesive layer 13 are disposed between the supporting glass substrate 10 and the processing substrate 11. The release layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.

[0123] As can be seen from FIG. 1 , the laminated substrate 1 is formed by stacking a support glass substrate 10, a release layer 12, an adhesive layer 13, and a processing substrate 11 in this order. The shape of the support glass substrate 10 is determined depending on the processing substrate 11, but in FIG. 1 , the shapes of the support glass substrate 10 and the processing substrate 11 are both wafer-shaped. In addition to amorphous silicon (a-Si), silicon oxide, silicate compounds, silicon nitride, aluminum nitride, titanium nitride, and the like are used for the release layer 12. The release layer 12 is formed by plasma CVD, spin coating using a sol-gel method, or the like. The adhesive layer 13 is made of a resin and is formed by coating using, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. After the support glass substrate 10 is peeled from the processing substrate 11 by the release layer 12, the adhesive layer 13 is dissolved and removed using a solvent or the like.

[0124] FIG. 2 is a conceptual cross-sectional view illustrating the manufacturing process of a fan-out WLP. FIG. 2(a) shows a state in which an adhesive layer 21 is formed on one surface of a support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2(b), multiple semiconductor chips 22 are attached to the adhesive layer 21. At this time, the active side of the semiconductor chips 22 is in contact with the adhesive layer 21. Next, as shown in FIG. 2(c), the semiconductor chips 22 are molded with a resin encapsulant 23. The encapsulant 23 is made of a material that exhibits minimal dimensional change after compression molding and during wiring molding. Next, as shown in FIGS. 2(d) and 2(e), the processed substrate 24 on which the semiconductor chips 22 are molded is separated from the support member 20, and then bonded to a supporting glass substrate 26 via an adhesive layer 25. At this time, the surface of the processed substrate 24 opposite the surface on which the semiconductor chips 22 are embedded is positioned on the supporting glass substrate 26. In this manner, a laminated substrate 27 is obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the supporting glass substrate 26. After the resulting laminated substrate 27 is transported, wiring 28 is formed on the surface of the processed substrate 24 on which the semiconductor chips 22 are embedded, and then a plurality of solder bumps 29 are formed, as shown in Fig. 2(f). Finally, after separating the processed substrate 24 from the supporting glass substrate 26, the processed substrate 24 is cut into individual semiconductor chips 22, and is then subjected to a subsequent packaging process (Fig. 2(g)).

[0125] FIG. 3 is a conceptual cross-sectional view illustrating a process for thinning a processed substrate using a support glass substrate as a back-grinding substrate. FIG. 3(a) shows a laminated substrate 30. The laminated substrate 30 is formed by stacking a support glass substrate 31, a release layer 32, an adhesive layer 33, and a processed substrate (silicon wafer) 34 in this order. A plurality of semiconductor chips 35 are formed on the surface of the processed substrate that contacts the adhesive layer 33 using a photolithography method or the like. FIG. 3(b) shows a process for thinning the processed substrate 34 using a polishing device 36. In this process, the processed substrate 34 is mechanically polished and thinned to, for example, several tens of μm. FIG. 3(c) shows a process for irradiating the release layer 32 with ultraviolet light 37 through the support glass substrate 31. After this process, the support glass substrate 31 can be separated as shown in FIG. 3(d). The separated support glass substrate 31 can be reused as needed. FIG. 3(e) shows a process for removing the adhesive layer 33 from the processed substrate 34. After this process, a thinned processed substrate 34 can be obtained.

[0126] The glass substrate of the present invention is characterized by having a glass composition containing, in mole percent, 50 to 65% SiO2, 8 to 25% Al2O3, 0 to 10% B2O3, 5.1 to 20% Li2O, more than 10 to 16.1% Na2O, 0 to 15% K2O, 0.01 to 3% MgO, 0 to 10% CaO, and 0.01 to 10% ZrO2, and having a Young's modulus of 80 GPa or more. The glass substrate of the present invention has a glass composition containing, in mole percent, 50 to 65% SiO2, 8 to 18% Al2O3, 0 to 10% B2O3, 20 to 25% Li2O, 0.01 to 10% Na2O, 0 to 15% K2O, 0 to 10% MgO, 0.01 to 10% CaO, and 0 to 10% ZrO2, and has a Young's modulus of 85 GPa or more, a fracture toughness K 1C is 0.80 MPa m 0.5 The technical features of the glass substrate of the present invention have already been described in the description of the supporting glass substrate of the present invention, and therefore detailed description thereof will be omitted here.

[0127] The glass substrate of the present invention has a glass composition containing, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0 to 7% MgO, 0 to 7% CaO, 0 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 The glass substrate of the present invention is characterized in that it contains, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0.01 to 7% MgO, 0.01 to 7% CaO, 0 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2 as a glass composition, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 The glass substrate of the present invention is characterized in that it contains, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0 to 7% MgO, 0 to 7% CaO, 0.01 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2 as a glass composition, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 The glass substrate of the present invention is characterized in that it contains, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 0.1 to 14% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0.01 to 7% MgO, 0.01 to 7% CaO, 0.01 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2 as a glass composition, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7The glass substrate of the present invention is characterized in that it contains, in mole percent, 64 to 76% SiO2, 4 to 15% Al2O3, 4 to 16% B2O3, 1.5 to 8.5% Li2O, 0.01 to 14% Na2O, 0 to 15% K2O, 0.01 to 7% MgO, 0.01 to 7% CaO, 0.01 to 7% SrO, 0 to 7% BaO, and 0 to 10% ZrO2 as a glass composition, and has a Young's modulus of 60 GPa or more and an average linear thermal expansion coefficient of 38 × 10 in a temperature range of 30 to 380°C. -7 / ℃ or more and 85×10 -7 / ° C. or less. Note that the technical features of the glass substrate of the present invention have already been described in the section explaining the supporting glass substrate of the present invention, and therefore detailed description thereof will be omitted here. [Example]

[0128] The present invention will be described below based on examples. Note that the following examples are merely illustrative and are not intended to limit the present invention in any way.

[0129] Tables 1 to 36 show the glass compositions and properties of the examples (samples Nos. 1 to 361) of the present invention. In the tables, "NA" means not measured, "Li / (Na+K)" means the molar ratio [LiO] / ([NaO]+[KO]), "Li+Na+K" means the molar ratio [LiO]+[NaO]+[KO], "Li / P" means the molar ratio [LiO] / [P2O5], and "(Na-Li) / (Al+B+P)" means the molar ratio ([NaO]-[LiO]) / ([AlO]+ "(B+Na-P) / (Al+Li)" means the molar ratio ([B2O3]+[Na2O] / [P2O5]) / ([Al2O3]+[Li2O]), and "Si+1.2P-3Al-2Li-1.5Na-KB" means [SiO2]+1.2×[P2O5]-3×[Al2O3]-2×[Li2O]-1.5×[Na2O]-[K2O]-[B2O3]. The values ​​in parentheses are calculated values ​​predicted from the glass composition.

[0130] Table 1

[0131] Table 2

[0132] Table 3

[0133] Table 4

[0134] Table 5

[0135] Table 6

[0136] Table 7

[0137] Table 8

[0138] Table 9

[0139] Table 10

[0140] Table 11

[0141] Table 12

[0142] Table 13

[0143] Table 14

[0144] Table 15

[0145] Table 16

[0146] Table 17

[0147] Table 18

[0148] Table 19

[0149] Table 20

[0150] Table 21

[0151] Table 22

[0152] Table 23

[0153] Table 24

[0154] Table 25

[0155] Table 26

[0156] Table 27

[0157] Table 28

[0158] Table 29

[0159] Table 30

[0160] Table 31

[0161] [Table 32]

[0162] [Table 33]

[0163] [Table 34]

[0164] [Table 35]

[0165] [Table 36]

[0166] Each sample in the table was prepared as follows. First, glass raw materials were mixed to obtain the glass composition shown in the table, and melted in a platinum pot at 1600°C for 21 hours. The resulting molten glass was then poured onto a carbon plate and formed into a flat plate. The plate was then cooled at 3°C / min through a temperature range between the annealing point and the strain point to obtain a glass substrate (glass substrate to be tempered). The surface of the resulting glass substrate was optically polished to a thickness of 1.5 mm, and various properties were evaluated.

[0167] The density (ρ) is a value measured by the well-known Archimedes method.

[0168] Thermal expansion coefficient (α) at ​​30 to 380°C 30-380℃ ) is the average thermal expansion coefficient measured using a dilatometer.

[0169] High temperature viscosity 10 2.5 Temperature (10 2.5 dPa·s) is a value measured by the platinum sphere pulling method.

[0170] The softening point (Ts) is a value measured based on the method of ASTM C338.

[0171] The liquidus temperature (TL) was determined by placing glass powder that passed through a standard 30 mesh (500 μm) sieve and remained on a 50 mesh (300 μm) sieve in a platinum boat, holding it in a temperature gradient furnace for 24 hours, then removing the platinum boat and observing it under a microscope.The liquidus temperature (logη at TL) was the highest temperature at which devitrification (devitrification particles) was observed inside the glass.The liquidus viscosity (logη at TL) was the viscosity at the liquidus temperature measured using the platinum sphere pulling method, and was expressed as logη by taking the logarithm.

[0172] The Young's modulus (E) was calculated by a method conforming to JIS R1602-1995 "Testing method for elastic modulus of fine ceramics."

[0173] Fracture toughness K 1C is calculated using a method that complies with JIS R1607-2015 "Room temperature fracture toughness test method for fine ceramics."

[0174] The acid resistance test uses a glass sample with dimensions of 50 x 10 x 1.0 mm, mirror-polished on both sides, as the measurement sample. After thoroughly washing with a neutral detergent and pure water, the sample is immersed in a 5% by mass HCl aqueous solution heated to 80°C for 24 hours. The mass loss per unit surface area (mg / cm) before and after immersion is measured. 2 ) was calculated.

[0175] The alkali resistance test was carried out by using a glass sample with dimensions of 50 x 10 x 1.0 mm, which was mirror-polished on both sides. After thoroughly washing with a neutral detergent and pure water, the sample was immersed in a 5% by mass NaOH aqueous solution heated to 80°C for 6 hours, and the mass loss per unit surface area (mg / cm) before and after immersion was measured. 2 ) was calculated.

[0176] As is clear from the table, samples Nos. 1 to 361 have an average linear thermal expansion coefficient of 39.6 × 10 in the temperature range of 30 to 380°C. -7 / ℃ or more and 107.4×10-7 / ℃ or less, Young's modulus is 63GPa or more, and fracture toughness K 1c is 0.91 MPa m 0.5 For the above reasons, it is believed that the processed substrate is unlikely to undergo dimensional changes and is unlikely to be damaged when dropped.

[0177] Next, each glass substrate was immersed in molten KNO3 at 430°C for 4 hours to carry out an ion exchange treatment, obtaining a tempered glass substrate with a compressive stress layer on the glass surface. After cleaning the glass surface, the compressive stress value (CS) of the compressive stress layer on the outermost surface was determined from the number and spacing of interference fringes observed using a surface stress meter FSM-6000 (manufactured by Orihara Manufacturing Co., Ltd.). K ) and stress depth (DOL_ZERO K ) was calculated. Here, DOL_ZERO K is the depth at which the compressive stress value becomes zero. In calculating the stress characteristics, the refractive index of each sample was set to 1.51 and the optical elastic constant was set to 30.1 [(nm / cm) / MPa].

[0178] In addition, each glass substrate was immersed in molten NaNO3 at 380°C for 1 hour to perform ion exchange treatment to obtain a tempered glass substrate. After cleaning the glass surface, the compressive stress value (CS) of the outermost surface was determined from the phase difference distribution curve observed using a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Manufacturing Co., Ltd.). Na ) and stress depth (DOL_ZERO Na ) was calculated. Here, DOL_ZERO Na is the depth at which the stress value becomes zero. In calculating the stress characteristics, the refractive index of each sample was set to 1.51 and the optical elastic constant was set to 30.1 [(nm / cm) / MPa].

[0179] As is clear from the table, when samples No. 1 to 361 were subjected to ion exchange treatment with KNO3 molten salt, the compressive stress value (CS K ) is 473 MPa or more, and when ion-exchanged with NaNO3 molten salt, the compressive stress value of the compressive stress layer on the outermost surface (CS Na) is 165 MPa or more, ion exchange treatment is possible with any molten salt, and it is thought that breakage is unlikely to occur when dropped.

[0180] [Example]

[0181] First, glass raw materials were prepared to obtain the glass compositions of Samples No. 2 and 34 in Table 1, and the mixture was melted at 1600°C for 21 hours using a platinum pot. The resulting molten glass was then poured onto a carbon plate and formed into a flat plate. The glass was then cooled at a rate of 3°C / min through a temperature range from the annealing point to the strain point to obtain a glass substrate. The surfaces of the obtained glass substrates were optically polished to a thickness of 0.7 mm for Sample No. 2 and 0.8 mm for Sample No. 34.

[0182] Next, the glass substrate was subjected to an ion exchange treatment by immersing it in a molten salt of NaNO3 (NaNO3 concentration 100 mass%) at 380°C for 3 hours, and then to another ion exchange treatment by immersing it in a mixed molten salt of KNO3 and LiNO3 (LiNO3 concentration 2.5 mass%) at 380°C. Furthermore, after cleaning the surface of the obtained tempered glass substrate, the stress profile of the tempered glass substrate was measured using a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Corporation) and a surface stress meter FSM-6000 (manufactured by Orihara Corporation). In both cases, a non-monotonic stress profile similar to that shown in Figure 4, i.e., a stress profile having a first peak, a second peak, a first bottom, and a second bottom, was obtained. [Example]

[0183] First, glass raw materials were prepared to obtain the glass compositions of Samples 108 and 145 in Table 5, and the mixture was melted at 1600°C for 21 hours using a platinum pot. The resulting molten glass was then poured onto a carbon plate and formed into a flat plate. The plate was then cooled at a rate of 3°C / min through a temperature range from the annealing point to the strain point, yielding a glass substrate. The surface of the resulting glass substrate was optically polished to a thickness of 0.7 mm.

[0184] Next, the glass substrate was subjected to an ion exchange treatment by immersing it in a molten salt of NaNO3 (NaNO3 concentration 100 mass%) at 380°C for 3 hours, and then to another ion exchange treatment by immersing it in a mixed molten salt of KNO3 and LiNO3 (LiNO3 concentration 1.5 mass%) at 380°C for 45 minutes. Furthermore, after cleaning the surface of the obtained tempered glass substrate, the stress profile of the tempered glass substrate was measured using a scattered light photoelastic stress meter SLP-1000 (manufactured by Orihara Corporation) and a surface stress meter FSM-6000 (manufactured by Orihara Corporation). Both measurements yielded non-monotonic stress profiles similar to those shown in Figure 5, i.e., stress profiles with a first peak, a second peak, a first bottom, and a second bottom. Therefore, the obtained tempered glass substrate is expected to have a low probability of breakage when dropped. [Example]

[0185] First, a glass batch prepared by blending glass raw materials to obtain the glass composition shown in the table was placed in a platinum crucible, and then melted, refined, and homogenized at 1500 to 1700°C for 24 hours. The glass batch was homogenized by stirring using a platinum stirrer during melting. The molten glass was then poured onto a carbon plate, formed into a plate, and slowly cooled at a temperature near the annealing point for 30 minutes.

[0186] Next, the glass substrates of Samples 1 to 361 were processed to a diameter of 300 mm and a thickness of 0.8 mm, and both surfaces were polished using a polishing machine. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads with different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads. During the polishing process, the glass substrate was controlled so that a portion of the glass substrate occasionally protruded from the polishing pad. The polishing pads were made of urethane, and the polishing slurry used during the polishing process had an average particle size of 2.5 μm and a polishing speed of 15 m / min. The total thickness variation (TTV) and warpage of each polished glass substrate were measured using a Kobelco Research Institute SBW-331ML / d. The total thickness variation (TTV) and warpage were found to be 0.38 μm and 28 μm, respectively, indicating that the glass substrates are suitable for use as support glass substrates. [Industrial Applicability]

[0187] The supporting glass substrate of the present invention is suitable as a supporting glass substrate for producing WLPs and PLPs. In addition to these uses, the supporting glass substrate of the present invention is expected to be applied to uses requiring high mechanical strength, such as window glass, magnetic disk substrates, flat panel display substrates, flexible display substrates, solar cell cover glass, solid-state imaging device cover glass, and automotive cover glass. [Explanation of symbols]

[0188] 1, 27, 30 Laminated board 10, 26, 31 Support glass substrate 11, 24, 34 Processed board 12, 32 peeling layer 13, 21, 25, 33 Adhesive layer 20 Support member 22, 35 Semiconductor chips 23 Encapsulating material 28 Wiring 29 Solder bumps 36 Polishing equipment 37 Ultraviolet light

Claims

1. A supporting glass substrate for supporting a processing substrate, the supporting glass substrate being made of lithium aluminosilicate glass, and having a glass composition of, in mol %, SiO ２ 50-68%, Al ２ O ３ 4-25%, B ２ O ３ 0-16%, Li ２ O 0.02-9.9%, Na ２ O >0~21%, K ２ O 0-15%, MgO 0-10%, ZnO 0-10%, P ２ O ５ The average linear thermal expansion coefficient in the temperature range of 30 to 380°C is 38 x 10 － ７ / °C or more and 160 x 10 －７ / °C or less.

2. A supporting glass substrate for supporting a processed substrate, the supporting glass substrate being lithium aluminosilicate glass, containing, in mole percent, SiO2 50-68%, Al2O3 17%-25%, B2O3 0-16%, Li2O 0.02-9.9%, Na2O greater than 0%-21%, K2O 0-15%, MgO 0-10%, ZnO 0-10%, and P2O5 1-15%, the glass having a compressive stress layer on the glass surface, and a compressive stress layer of ([Li2O] + [Na2O] + [ [SiO 2 ]+1.2×[P 2 O 5 ]−3×[Al 2 O 3 ]-2×[Li 2 O]-1.5×[Na 2 O]-[K 2 O]-[B 2 O 3 ]≧-20 mol % and has an average linear thermal expansion coefficient in the temperature range of 30 to 380°C of 38 x 10 -7 / °C or more and 160 x 10 -7 / °C or less.

3. Molar ratio ([Na ２ O] - [Li ２ O]) / ([Al ２ O ３ + [B ２ O ３ + [P ２ O ５ 3. The supporting glass substrate according to claim 1, wherein the relationship of (a) to (c) satisfies: Board.

4. Molar ratio ([B ２ O ３ ]+[Na ２ O]-[P ２ O ５ ]) / ([Al ２ O ３ ]+[Li ２ 3. The supporting glass substrate according to claim 1, wherein the relationship of [(R) / (R) / (R))≧0.001 is satisfied. 。

5. ([Li ２ O] + [Na ２ O] + [K ２ O]) at 12 mol % or more, ２ ]+ 1.2×[P ２ O ５ ]-3×[Al ２ O ３ ]-2×[Li ２ O]-1.5×[N ２ O]-[K ２ O]-[B ２ O ３ 5. Any one of claims 1 to 4, wherein the relationship of ≧−40% is satisfied. The supporting glass substrate according to claim 1.

6. High temperature viscosity 10 ２．５ The supporting glass substrate according to any one of claims 1 to 5, characterized in that the temperature at dPa·s is less than 1660°C.

7. 7. The supporting glass substrate according to claim 1, wherein an overflow joining surface is provided at the center in the thickness direction of the supporting glass substrate.

8. The mass loss per unit surface area when immersed in a 5% by mass aqueous solution of HCl heated to 80°C for 24 hours was 100.0 mg / cm ２ The supporting glass substrate according to any one of claims 1 to 7, wherein:

9. The mass loss per unit surface area when immersed in a 5% by mass NaOH aqueous solution heated to 80°C for 6 hours was 5.0 mg / cm ２ 9. The supporting glass substrate according to claim 1, wherein:

10. 10. The supporting glass substrate according to claim 1, further comprising a compressive stress layer on the glass surface.

11. The glass has a compressive stress layer on the surface thereof, and the glass composition is, in mol %, SiO ２ 50-68%, Al ２ O ３ 4-25%, B ２ O ３ 0-16%, Li ２ O 0.9-9.9%, Na ２ O >0~21%, K ２ O 0-15%, MgO 0-10%, ZnO 0-10%, P ２ O ５ A supporting glass substrate containing 4.1 to 15% of Zn.

12. A glass having a compressive stress layer on the surface thereof, the glass composition containing, in mole percent, 50-68% SiO 2 , 17-25% Al 2 O 3 , 0-16% B 2 O 3 , 0.9-9.9% Li 2 O , more than 0-21% Na 2 O , 0-15% K 2 O , 0-10% MgO , 0-10% ZnO , and 1-15% P 2 O 5 , and the glass having a compressive stress layer on the surface thereof, and ([Li 2 O]+ A supporting glass substrate characterized by containing 12 mol % or more of [Na 2 O] + [K 2 O] and satisfying the relationship: [SiO 2 ] + 1.2 × [P 2 O 5 ] - 3 × [Al 2 O 3 ] - 2 × [Li 2 O] - 1.5 × [Na 2 O] - [K 2 O] - [B 2 O 3 ] ≧ -20 mol %.

13. 13. The supporting glass substrate according to claim 11, wherein the compressive stress value of the outermost surface of the compressive stress layer is 165 to 1000 MPa.

14. 14. The supporting glass substrate according to claim 11, wherein the compressive stress layer has a stress depth of 50 to 200 μm.

15. 15. The supporting glass substrate according to claim 11, wherein the stress profile in the thickness direction has at least a first peak, a second peak, a first bottom, and a second bottom.

16. The supporting glass substrate according to any one of claims 1 to 15, characterized in that it has a wafer shape or a substantially circular plate shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, a total plate thickness variation (TTV) of 5 μm or less, and a warpage of 60 μm or less.

17. 17. The supporting glass substrate according to claim 1, having a substantially rectangular shape of 200 mm or more, a thickness of 1.0 mm or more, and a total thickness variation (TTV) of 30 μm or less.

18. The supporting glass substrate according to claim 17, wherein the angle of the corner when viewed from above is 89.0 to 91.0°.

19. 19. The supporting glass substrate according to claim 1, further comprising a positioning portion on the outer periphery thereof.

20. 20. The supporting glass substrate according to claim 19, wherein the positioning portion is any one of a notch structure, a chamfered structure, and a cutout structure.

21. A laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 20.

22. 22. The laminate of claim 21, wherein the engineered substrate comprises at least a semiconductor chip molded with an encapsulant.

23. A step of preparing a laminate including at least a processing substrate and a support glass substrate for supporting the processing substrate; A method for manufacturing a semiconductor package, comprising: a step of processing a processing substrate; and wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 20.

24. 24. The method for manufacturing a semiconductor package according to claim 23, wherein the processing step includes a step of wiring one surface of the processing substrate.

25. 25. The method for manufacturing a semiconductor package according to claim 23, wherein the processing step includes forming solder bumps on one surface of the processing substrate.

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