Semiconductor Devices

Abstract

This semiconductor device comprises: a chip having a main surface; a drain region formed in an upper-layer portion of the main surface; a source region formed in the upper-layer portion of the main surface at an interval from the drain region; a channel inversion region formed on the source region side between the drain region and the source region in the upper-layer portion of the main surface; a drift region formed in a region between the drain region and the channel inversion region in the upper-layer portion of the main surface; a gate insulating film including a first part coating the channel inversion region on the main surface and a second part coating the drift region on the main surface; and a gate electrode including a first electrode part coating the first part and a second electrode part leading out of the first electrode part onto the second part so as to partially expose the second part.

Description

[Technical Field]

[0001] This application corresponds to Japanese Patent Application No. 2020-181367 filed with the Japan Patent Office on October 29, 2020, the entire disclosure of which is incorporated herein by reference. The present invention relates to a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses a semiconductor device including a p-substrate, a p-well, an n-type low-concentration diffusion layer, a source, a drain, a gate insulating film, and a gate electrode. The p-well is formed in the p-substrate. The n-type low-concentration diffusion layer is formed in the p-well. The source is formed in the p-well and spaced apart from the n-type low-concentration diffusion layer. The drain is formed in the n-type low-concentration diffusion layer and spaced apart from the source. The gate insulating film covers a channel region between the source and drain. The gate electrode is formed on the gate insulating film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2007 / 215949 Summary of the Invention [Problem to be solved by the invention]

[0004] An embodiment of the present invention provides a semiconductor device capable of improving electrical characteristics. [Means for solving the problem]

[0005] One embodiment of the present invention provides a semiconductor device including a chip having a main surface, a drain region formed in a surface layer portion of the main surface, a source region formed in the surface layer portion of the main surface at a distance from the drain region, a channel inversion region formed between the drain region and the source region in the surface layer portion of the main surface and on the source region side, a drift region formed in a region in the surface layer portion of the main surface between the drain region and the channel inversion region, a gate insulating film having a first portion covering the channel inversion region on the main surface and a second portion covering the drift region on the main surface, and a gate electrode having a first electrode portion covering the first portion and a second electrode portion extended from the first electrode portion onto the second portion so as to partially expose the second portion.

[0006] The above and other objects, features and advantages will become more apparent from the following description of the embodiments with reference to the accompanying drawings. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing a semiconductor device according to a first embodiment of the present invention. [Figure 2] FIG. 2 is an enlarged view showing region II shown in FIG. 1 together with the gate electrode according to the first embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along line III-III shown in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV shown in FIG. [Figure 5] FIG. 5 is a cross-sectional view taken along line VV shown in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI shown in FIG. [Figure 7A] FIG. 7A is an enlarged view showing region II shown in FIG. 1 together with a gate electrode according to the second embodiment. [Figure 7B] FIG. 7B is an enlarged view showing the region II shown in FIG. 1 together with the gate electrode according to the third embodiment. [Figure 7C]FIG. 7C is an enlarged view showing the region II shown in FIG. 1 together with the gate electrode according to the fourth embodiment. [Figure 7D] FIG. 7D is an enlarged view showing the region II shown in FIG. 1 together with the gate electrode according to the fifth embodiment. [Figure 7E] FIG. 7E is an enlarged view showing the region II shown in FIG. 1 together with the gate electrode according to the sixth embodiment. [Figure 8] FIG. 8 is a schematic diagram showing a semiconductor device according to a second embodiment of the present invention. [Figure 9] FIG. 9 is an enlarged view showing the region IX shown in FIG. 8 together with the gate electrode according to the first embodiment. [Figure 10] FIG. 10 is a cross-sectional view taken along the line XX shown in FIG. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Fig. 1 is a schematic diagram showing a semiconductor device 1 according to a first embodiment of the present invention. Referring to Fig. 1, the semiconductor device 1 includes a semiconductor chip 2 (chip) having a rectangular parallelepiped shape. In this embodiment, the semiconductor chip 2 is made of a silicon chip. The semiconductor chip 2 has a first main surface 3 on one side, a second main surface 4 on the other side, and first to fourth side surfaces 5A to 5D connecting the first main surface 3 and the second main surface 4.

[0009] The first main surface 3 and the second main surface 4 are formed in a quadrangular shape in a plan view seen from their normal direction Z. The normal direction Z is also the thickness direction of the semiconductor chip 2. The first side surface 5A and the second side surface 5B extend in a first direction X along the first main surface 3 and face a second direction Y that intersects (specifically, is perpendicular to) the first direction X. The third side surface 5C and the fourth side surface 5D extend in the second direction Y and face the first direction X.

[0010] The semiconductor device 1 includes a p-type (first conductivity type) first semiconductor region 6 formed in a surface layer portion of the second main surface 4 of the semiconductor chip 2. The first semiconductor region 6 is formed over the entire surface layer portion of the second main surface 4 and is exposed from the second main surface 4 and the first to fourth side surfaces 5A to 5D. In other words, the first semiconductor region 6 includes parts of the second main surface 4 and the first to fourth side surfaces 5A to 5D.

[0011] The first semiconductor region 6 may have a substantially constant p-type impurity concentration in the thickness direction. The p-type impurity concentration of the first semiconductor region 6 may be 1×10 14 cm -3 5x10 or more 15 cm -3 The thickness of the first semiconductor region 6 may be 50 μm or more and 800 μm or less. The thickness of the first semiconductor region 6 is adjusted by grinding the second main surface 4. In this embodiment, the first semiconductor region 6 is formed of a p-type semiconductor substrate.

[0012] The semiconductor device 1 includes a p-type second semiconductor region 7 (semiconductor region) formed in a surface layer portion of the first main surface 3 of the semiconductor chip 2. The second semiconductor region 7 is formed over the entire surface layer portion of the first main surface 3 and is exposed from the first main surface 3 and the first to fourth side surfaces 5A to 5D. In other words, the second semiconductor region 7 includes parts of the first main surface 3 and the first to fourth side surfaces 5A to 5D. The p-type impurity concentration of the second semiconductor region 7 is 1×10 14 cm -3 5x10 or more 15 cm -3 The thickness of the second semiconductor region 7 may be 5 μm or more and 20 μm or less. In this embodiment, the second semiconductor region 7 is formed by a p-type epitaxial layer.

[0013] The semiconductor device 1 includes a plurality of device regions 8 provided in the second semiconductor region 7. The plurality of device regions 8 are regions in which various functional devices are respectively formed. In a plan view, the plurality of device regions 8 are respectively defined inwardly of the first main surface 3 at intervals from the first to fourth side surfaces 5A to 5D. The number, arrangement, and shape of the device regions 8 are arbitrary and are not limited to a specific number, arrangement, or shape. Each of the plurality of functional devices may include at least one of a semiconductor switching device, a semiconductor rectifying device, and a passive device.

[0014] The semiconductor switching device may include at least one of a JFET (Junction Field Effect Transistor), a transistor (Metal Insulator Semiconductor Field Effect Transistor), a BJT (Bipolar Junction Transistor), and an IGBT (Insulated Gate Bipolar Junction Transistor). The semiconductor rectifying device may include at least one of a pn junction diode, a pin junction diode, a Zener diode, a Schottky barrier diode, and a fast recovery diode. The passive device may include at least one of a resistor, a capacitor, an inductor, and a fuse.

[0015] In this embodiment, the plurality of device regions 8 include at least one MISFET region 9. The MISFET region 9 is a region including a planar gate structure type MISFET 10. A specific structure of the MISFET region 9 (MISFET 10) side will be described below.

[0016] Fig. 2 is an enlarged view showing region II shown in Fig. 1 together with a gate electrode 40 according to the first embodiment. Fig. 3 is a cross-sectional view taken along line III-III shown in Fig. 2. Fig. 4 is a cross-sectional view taken along line IV-IV shown in Fig. 2. Fig. 5 is a cross-sectional view taken along line VV shown in Fig. 2. Fig. 6 is a cross-sectional view taken along line VI-VI shown in Fig. 2.

[0017] 2 to 6, the semiconductor device 1 includes a region separation structure 11 that electrically separates the MISFET region 9 from other regions in the second semiconductor region 7. The region separation structure 11 is formed in a ring shape surrounding a part of the first main surface 3 in a plan view, and defines the MISFET region 9 of a predetermined shape. In this embodiment, the region separation structure 11 is formed in a quadrangular ring shape in a plan view (a rectangular ring shape extending in the first direction X in this embodiment), and defines the quadrangular-shaped (rectangular shape extending in the first direction X in this embodiment) MISFET region 9 by its inner peripheral edge. The planar shape of the region separation structure 11 (the planar shape of the MISFET region 9) is arbitrary.

[0018] The region isolation structure 11 includes a p-type first isolation structure 12. A ground potential may be applied to the first isolation structure 12. The first isolation structure 12 is formed in a ring shape surrounding a part of the first main surface 3 in a plan view. The first isolation structure 12 extends in a wall shape from the first main surface 3 toward the first semiconductor region 6 so as to cross the second semiconductor region 7, and is electrically connected to the first semiconductor region 6.

[0019] In this embodiment, the first isolation structure 12 includes a p-type first buried region 13 and a p-type first isolation region 14. The first buried region 13 is formed at the boundary between the first semiconductor region 6 and the second semiconductor region 7. The first buried region 13 is formed spaced apart from the first main surface 3 and the second main surface 4 in the normal direction Z, and is electrically connected to the first semiconductor region 6 and the second semiconductor region 7. The first buried region 13 has a p-type impurity concentration that exceeds the p-type impurity concentration of the first semiconductor region 6. The p-type impurity concentration of the first buried region 13 is 5×10 16 cm -3 5x10 or more 18cm -3 It may be the following:

[0020] The first isolation region 14 is formed in the second semiconductor region 7 in a region between the first main surface 3 and the first buried region 13, and is electrically connected to the first buried region 13. In this embodiment, one first isolation region 14 is formed, but the number of stacked first isolation regions 14 is arbitrary as long as they are electrically connected to the first buried region 13. A plurality of first isolation regions 14 may be stacked from the first buried region 13 side to the first main surface 3 side. The p-type impurity concentration of the first isolation region 14 is 1×10 17 cm -3 More than 1×10 19 cm -3 The first isolation region 14 may have a p-type impurity concentration equal to or lower than the p-type impurity concentration of the first buried region 13.

[0021] The region isolation structure 11 includes a second isolation structure 15 of n-type (second conductivity type). A power supply potential may be applied to the second isolation structure 15. The second isolation structure 15 is formed at a distance inward from the inner periphery of the first isolation structure 12 in a plan view, and defines a MISFET region 9 within the region surrounded by the first isolation structure 12. Specifically, the second isolation structure 15 is formed in a cylindrical shape that surrounds a portion of the second semiconductor region 7 from the bottom side of the second semiconductor region 7 toward the first main surface 3. The second isolation structure 15 fixes a portion of the second semiconductor region 7 in an electrically floating state, and at the same time defines the portion of the second semiconductor region 7 as the MISFET region 9.

[0022] In this embodiment, the second isolation structure 15 includes an n-type second buried region 16 and an n-type second isolation region 17. The second buried region 16 is formed at the boundary between the first semiconductor region 6 and the second semiconductor region 7 within the region surrounded by the first isolation structure 12. The n-type impurity concentration of the second buried region 16 is 5×10 17 cm -3 More than 1×10 19 cm -3 It may be the following:

[0023] The second buried region 16 is formed at a distance inward from the inner periphery of the first isolation structure 12, and exposes a portion of the first semiconductor region 6 between the second buried region 16 and the first isolation structure 12. The second buried region 16 is formed at a distance from the first main surface 3 and the second main surface 4 in the normal direction Z, and is electrically connected to the first semiconductor region 6 and the second semiconductor region 7. In this embodiment, the second buried region 16 is formed in a quadrangular shape (specifically, a rectangular shape extending in the first direction X) that follows the inner periphery of the first isolation structure 12 in a plan view.

[0024] The second isolation region 17 is formed in the second semiconductor region 7 in a region between the first major surface 3 and the periphery of the second buried region 16, and is electrically connected to the second buried region 16. In this embodiment, one second isolation region 17 is formed, but the number of stacked second isolation regions 17 is arbitrary as long as they are electrically connected to the second buried region 16. A plurality of second isolation regions 17 may be stacked from the periphery side of the second buried region 16 toward the first major surface 3. The n-type impurity concentration of the second isolation region 17 is 1×10 17 cm -3 More than 1×10 19 cm -3 It may be the following:

[0025] The semiconductor device 1 includes a MISFET 10 formed in a MISFET region 9. The MISFET 10 includes at least one MISFET cell 20 formed in the MISFET region 9. When the MISFET 10 includes a plurality of MISFET cells 20, the plurality of MISFET cells 20 may be formed in the MISFET region 9 at intervals in the first direction X. In this embodiment, the MISFET 10 is composed of a single MISFET cell 20. The specific structure of the MISFET cell 20 will be described below.

[0026] The MISFET cell 20 includes an n-type drain well region 21 formed in the surface layer of the second semiconductor region 7 in the MISFET region 9. The drain well region 21 is formed on one end side (the third side surface 5C side) of the MISFET region 9. The drain well region 21 has an n-type impurity concentration that exceeds the p-type impurity concentration of the second semiconductor region 7. The n-type impurity concentration of the drain well region 21 is 1×10 16 cm -3 Over 2×10 18 cm -3 It may be the following:

[0027] The drain well region 21 is formed at a distance from the second isolation structure 15 (second isolation region 17) inwardly of the MISFET region 9 in plan view, and exposes a portion of the second semiconductor region 7 at the periphery of the MISFET region 9. In this embodiment, the drain well region 21 is formed in a quadrangular shape along the inner periphery (periphery of the second buried region 16) of the second isolation structure 15 (second isolation region 17) in plan view. The drain well region 21 is formed at a distance from the second buried region 16 towards the first main surface 3 in the normal direction Z, and faces the second buried region 16 with a portion of the second semiconductor region 7 sandwiched therebetween. In other words, the drain well region 21 has side portions and a bottom portion electrically connected to the second semiconductor region 7.

[0028] The MISFET cell 20 includes a p-type source well region 22 formed in a surface layer portion of the second semiconductor region 7 at a distance from the drain well region 21 in the MISFET region 9. The source well region 22 is formed on the other end side (fourth side surface 5D side) of the MISFET region 9 at a distance from the drain well region 21 in the first direction X. The source well region 22 has an n-type impurity concentration that exceeds the p-type impurity concentration of the second semiconductor region 7. The p-type impurity concentration of the source well region 22 is 5×10 16 cm -3 Over 2×10 18 cm -3 It may be the following:

[0029] The source well region 22 is formed at a distance from the second isolation structure 15 (second isolation region 17) inwardly of the MISFET region 9 in plan view, and exposes a portion of the second semiconductor region 7 at the periphery of the MISFET region 9. In this embodiment, the source well region 22 is formed in a quadrangular shape along the inner periphery (periphery of the second buried region 16) of the second isolation structure 15 (second isolation region 17) in plan view. The source well region 22 is formed at a distance from the second buried region 16 towards the first main surface 3 in the normal direction Z, and faces the second buried region 16 with a portion of the second semiconductor region 7 sandwiched therebetween. In other words, the source well region 22 has side portions and a bottom portion electrically connected to the second semiconductor region 7.

[0030] The MISFET cell 20 includes an n-type drain region 23 formed in the surface layer of the drain well region 21 in the MISFET region 9. The drain region 23 has an n-type impurity concentration that exceeds the n-type impurity concentration of the drain well region 21. The n-type impurity concentration of the drain region 23 is 1×10 19 cm -3 Over 2×10 21 cm -3 It may be the following:

[0031] The drain region 23 is formed inward from the periphery of the drain well region 21 at a distance in plan view, and is formed in a strip shape extending in one direction (second direction Y). The planar shape of the drain region 23 is arbitrary, and may be a square, hexagonal, or circular shape. The drain region 23 is formed at a distance from the bottom of the drain well region 21 toward the first main surface 3 in the normal direction Z, and faces the second semiconductor region 7 with a part of the drain well region 21 in between.

[0032] The MISFET cell 20 includes an n-type source region 24 formed in the surface layer of the source well region 22 in the MISFET region 9. The source region 24 is formed on one end side (the third side surface 5C side) of the source well region 22. The source region 24 has an n-type impurity concentration that exceeds the n-type impurity concentration of the drain well region 21. The n-type impurity concentration of the source region 24 is 1×1019 cm -3 Over 2×10 21 cm -3 The n-type impurity concentration of the source region 24 is preferably approximately equal to the n-type impurity concentration of the drain region 23.

[0033] The source region 24 is formed inward from the periphery of the source well region 22 at a distance in plan view, and is formed in a band shape extending in one direction (second direction Y). The planar shape of the source region 24 is arbitrary, and may be a square, hexagonal, or circular shape. The source region 24 is formed at a distance from the bottom of the source well region 22 toward the first main surface 3 in the normal direction Z, and faces the second semiconductor region 7 with a part of the source well region 22 in between.

[0034] The MISFET cell 20 includes a p-type contact region 25 formed in the surface layer of the source well region 22 in the MISFET region 9. The contact region 25 is formed on the other end side (the fourth side surface 5D side) of the source well region 22. The contact region 25 has a p-type impurity concentration that exceeds the p-type impurity concentration of the source well region 22. The p-type impurity concentration of the contact region 25 is 5×10 18 cm -3 More than 1×10 20 cm -3 It may be the following:

[0035] The contact region 25 is formed in a surface layer portion of the source well region 22 so as to be connected to the source region 24. The contact region 25 is formed inward from the periphery of the source well region 22 at a distance in plan view, and is formed in a strip shape extending in one direction (the second direction Y in this embodiment). The planar shape of the contact region 25 is arbitrary, and may be a square, hexagonal, or circular shape. The contact region 25 is formed at a distance from the bottom of the source well region 22 toward the first main surface 3 in the normal direction Z, and faces the second semiconductor region 7 across a part of the source well region 22.

[0036] The MISFET cell 20 includes a channel inversion region 26 (channel region) formed in a region between the drain region 23 and the source region 24 in the surface layer portion of the first main surface 3. In Figures 3 and 4, the channel inversion region 26 is indicated by a thick dashed line. The channel inversion region 26 is a region where the conduction and blocking of the current path formed between the drain region 23 and the source region 24 is controlled. The current flowing between the drain region 23 and the source region 24 is a drain-source current.

[0037] The channel inversion region 26 is formed on the source region 24 side in the region between the drain region 23 and the source region 24. Specifically, the channel inversion region 26 is formed in the region between the drain well region 21 and the source region 24 in the surface layer portion of the first main surface 3. More specifically, the channel inversion region 26 is formed in the surface layer portion of the second semiconductor region 7 and the surface layer portion of the source well region 22 in the region between the drain well region 21 and the source region 24. In this embodiment, the channel inversion region 26 is formed in a strip shape extending in the second direction Y across the entire opposing region between the drain well region 21 and the source region 24 in a plan view.

[0038] The MISFET cell 20 includes a drain drift region 27 (drift region) formed in a region between the drain region 23 and the channel inversion region 26 in the surface layer portion of the first main surface 3. In FIGS. 3 to 6, the drain drift region 27 is indicated by a thin dashed line. The drain drift region 27 is a region that serves as a current path between the drain region 23 and the source region 24 (channel inversion region 26). The current that flows between the drain region 23 and the source region 24 (channel inversion region 26) is a drain-source current.

[0039] The drain drift region 27 is formed in the drain well region 21. Specifically, the drain drift region 27 is formed in the region between the drain region 23 and the channel inversion region 26 in the drain well region 21. In this embodiment, the drain drift region 27 is formed in a strip shape extending in the second direction Y across the entire opposing region between the drain region 23 and the channel inversion region 26 in a plan view. In the first direction X, the length of the drain drift region 27 may be equal to or greater than the length of the channel inversion region 26, or may be less than the length of the channel inversion region 26. In the following description, the term drain drift region 27 includes the drain well region 21.

[0040] The MISFET cell 20 includes a gate insulating film 30 formed on the first main surface 3 in the MISFET region 9. In this embodiment, the gate insulating film 30 includes silicon oxide. Specifically, the gate insulating film 30 includes silicon oxide made of an oxide of the semiconductor chip 2 (the second semiconductor region 7, etc.). The thickness of the gate insulating film 30 may be 3 nm or more and 100 nm or less.

[0041] The gate insulating film 30 covers the region between the drain region 23 and the source region 24 on the first main surface 3 in the form of a film. Specifically, the gate insulating film 30 is formed on the first main surface 3 across the source region 24 and the drain drift region 27 (drain well region 21), and covers the source region 24, the channel inversion region 26, and the drain drift region 27.

[0042] The gate insulating film 30 includes a first portion 31 and a second portion 32. The first portion 31 covers the second semiconductor region 7, the source well region 22, and a portion of the source region 24 on the first main surface 3. That is, the first portion 31 covers the channel inversion region 26 on the first main surface 3. The first portion 31 preferably covers the entire channel inversion region 26. The first portion 31 is formed at a distance from the contact region 25 toward the drain region 23 in a plan view, and exposes the source region 24 and the contact region 25. In this embodiment, the first portion 31 exposes a portion of the source region 24 and the entire contact region 25. The first portion 31 has a first length L1 in the first direction X.

[0043] Second portion 32 extends from first portion 31 toward drain region 23 and covers drain well region 21 on first main surface 3. That is, second portion 32 covers drain drift region 27 on first main surface 3. Specifically, second portion 32 is formed at an interval from drain region 23 toward source region 24 in plan view, exposes a part of drain drift region 27 (specifically, the end portion on the fourth side surface 5D side) and the entire drain region 23, and partially covers drain drift region 27.

[0044] The planar area of ​​second portion 32 may be equal to or greater than the planar area of ​​the portion of drain drift region 27 exposed from second portion 32. Second portion 32 has a second length L2 in first direction X. Second length L2 may be equal to or greater than first length L1, or may be less than first length L1.

[0045] The MISFET cell 20 includes a field insulating film 35 formed on the first main surface 3 in the MISFET region 9. In FIG. 2, the end (opening) of the field insulating film 35 is indicated by a thick dashed line. The field insulating film 35 is formed inside and outside the MISFET region 9, and covers the region outside the gate insulating film 30 within the MISFET region 9. In this form, the field insulating film 35 includes silicon oxide.

[0046] Specifically, the field insulating film 35 contains silicon oxide made of an oxide of the semiconductor chip 2 (the second semiconductor region 7, etc.). The field insulating film 35 may be a LOCOS film (local oxidation of silicon film). The field insulating film 35 has a thickness different from that of the gate insulating film 30. Specifically, the thickness of the field insulating film 35 exceeds the thickness of the gate insulating film 30. The thickness of the field insulating film 35 may be 50 nm or more and 500 nm or less.

[0047] The field insulating film 35 covers the second semiconductor region 7, the drain well region 21, and the source well region 22 in the MISFET region 9 so as to expose the drain region 23, the source region 24, and the contact region 25. The field insulating film 35 surrounds the gate insulating film 30 in a plan view and is continuous with the first portion 31 and the second portion 32 of the gate insulating film 30. The field insulating film 35 covers the drain drift region 27 in the region between the drain region 23 and the second portion 32 of the gate insulating film 30 and is continuous with the second portion 32.

[0048] In this embodiment, an example has been described in which the field insulating film 35 is formed as a separate body from the gate insulating film 30. However, the field insulating film 35 may be formed as a part of the gate insulating film 30 (i.e., a thick film portion). Also, the field insulating film 35 may be formed as a part of another gate insulating film that is thicker than the gate insulating film 30. Of course, the MISFET cell 20 may include an STI (Sallow Trench Isolation) structure instead of the field insulating film 35. The STI structure includes a trench formed in the first main surface 3 and an insulator buried in the trench. The insulator may include at least one of silicon oxide and silicon nitride.

[0049] The MISFET cell 20 includes a gate electrode 40 formed on the gate insulating film 30. In FIG. 2, the gate electrode 40 is indicated by hatching. The gate electrode 40 forms a planar gate structure together with the gate insulating film 30. In this embodiment, the gate electrode 40 includes conductive polysilicon. The conductive polysilicon includes at least one of n-type polysilicon and p-type polysilicon.

[0050] The gate electrode 40 covers the region between the drain region 23 and the source region 24 in the form of a film on the gate insulating film 30. Specifically, the gate electrode 40 is formed on the gate insulating film 30 across the source region 24 and the drain drift region 27 (drain well region 21), and covers the drain drift region 27, the channel inversion region 26, and the source region 24 with the gate insulating film 30 in between. The gate electrode 40 has a planar shape different from that of the gate insulating film 30.

[0051] Specifically, the gate electrode 40 includes a first electrode portion 41 and a second electrode portion 42 formed in different planar shapes in different regions on the gate insulating film 30. The first electrode portion 41 is formed on the first portion 31 of the gate insulating film 30, and faces the second semiconductor region 7, the source well region 22, and part of the source region 24, with the first portion 31 of the gate insulating film 30 in between. In other words, the first electrode portion 41 faces the channel inversion region 26 with the first portion 31 in between.

[0052] The first electrode portion 41 preferably faces the entire region of the channel inversion region 26, sandwiching the first portion 31 therebetween. The gate electrode 40 (first electrode portion 41) preferably extends across the periphery of the channel inversion region 26 in the second direction Y in a plan view and is drawn out to a region outside the channel inversion region 26 (onto the field insulating film 35). The portion of the gate electrode 40 drawn out in the second direction Y so as to reach the region outside the channel inversion region 26 may be formed as a connection portion for a gate contact electrode (not shown). The first electrode portion 41 is formed at a distance from the contact region 25 towards the source region 24 in a plan view, exposing the source region 24 and the contact region 25.

[0053] The second electrode unit 42 is formed on the second portion 32 of the gate insulating film 30. Specifically, the second electrode unit 42 is drawn from the first electrode unit 41 onto the second portion 32 so as to partially expose the second portion 32, and faces a part of the drain drift region 27 across the second portion 32. The second electrode unit 42 is further drawn from above the second portion 32 onto the field insulating film 35 so as to partially expose the field insulating film 35, and faces the drain drift region 27 across the field insulating film 35.

[0054] The second electrode portion 42 forms a gate-drain capacitance Cgd between itself and the drain drift region 27. The gate-drain capacitance Cgd is also called a feedback capacitance Crss. The gate-drain capacitance Cgd includes a first gate-drain capacitance Cgd1 and a second gate-drain capacitance Cgd2 connected in parallel to the first gate-drain capacitance Cgd1.

[0055] The first gate-drain capacitance Cgd1 is formed in a portion of the second electrode unit 42 facing the drain drift region 27 with the gate insulating film 30 interposed therebetween. The second gate-drain capacitance Cgd2 is formed in a portion of the second electrode unit 42 facing the drain drift region 27 with the field insulating film 35 interposed therebetween. The gate-drain capacitance Cgd includes a combined capacitance of the first gate-drain capacitance Cgd1 and the second gate-drain capacitance Cgd2. The second gate-drain capacitance Cgd2 may be equal to or smaller than the first gate-drain capacitance Cgd1, or may exceed the first gate-drain capacitance Cgd1.

[0056] The second electrode portion 42 has at least one (in this embodiment, multiple) drawn-out portion 43 drawn out from the first electrode portion 41 onto the second portion 32 so as to partially expose the second portion 32. The number of drawn-out portions 43 is adjusted appropriately depending on the length of the gate electrode 40 (gate insulating film 30) in the second direction Y.

[0057] The multiple lead portions 43 are each drawn out in a strip shape from the first electrode portion 41 onto the second portion 32 toward the drain region 23 in a plan view, and are arranged at intervals in the second direction Y. That is, the second electrode portion 42 (the multiple lead portions 43) are drawn out in a comb-teeth shape from the first electrode portion 41 toward the drain region 23 in a plan view. Furthermore, the second electrode portion 42 (the multiple lead portions 43) are arranged in a line in the second direction Y at intervals in a plan view, covering multiple locations of the second portion 32. The multiple lead portions 43 are preferably arranged at equal intervals in the second direction Y.

[0058] The multiple lead portions 43 each cover the second portion 32 at intervals from the first portion 31 (channel inversion region 26) toward the drain region 23 in a plan view. In other words, the multiple lead portions 43 cover only the second portion 32 of the gate insulating film 30 and do not cover the first portion 31. The multiple lead portions 43 each cover the second portion 32 at intervals from the drain region 23 toward the first portion 31 (channel inversion region 26) in a plan view. The multiple lead portions 43 face the drain region 23 on one side in the first direction X in a plan view, and face the source region 24 (channel inversion region 26) on the other side in the first direction X.

[0059] In this embodiment, the multiple lead portions 43 include two outer lead portions 43A arranged at both ends in the second direction Y, and multiple inner lead portions 43B sandwiched between the two outer lead portions 43A. The outer lead portions 43A may be extended to a region outside the drain drift region 27 (onto the field insulating film 35) across the periphery of the drain drift region 27 in the second direction Y in plan view.

[0060] In this case, the portion of gate electrode 40 (outer lead portion 43A) that is led out to a region outside channel inversion region 26 may be formed as a connection portion for a gate contact electrode (not shown). Of course, outer lead portion 43A may be formed only within a region surrounded by the periphery of drain well region 21 in plan view.

[0061] In this embodiment, the multiple inner drawn-out portions 43B are formed only within a region surrounded by the periphery of the drain well region 21 in a plan view. It is preferable that all of the multiple inner drawn-out portions 43B face the drain region 23 on one side in the first direction X in a plan view. It is preferable that all of the multiple inner drawn-out portions 43B face the source region 24 (channel inversion region 26) on the other side in the first direction X in a plan view.

[0062] The multiple lead portions 43 are further led out in a strip shape onto the field insulating film 35 from above the second portion 32 of the gate insulating film 30 toward the drain region 23. That is, the multiple lead portions 43 continuously cover the second portion 32 and a portion of the field insulating film 35. The multiple lead portions 43 are formed on the field insulating film 35 at intervals in the second direction Y. That is, the second electrode portion 42 (the multiple lead portions 43) cover multiple locations of the field insulating film 35 at intervals in a line in the second direction Y in a plan view.

[0063] Preferably, each of the plurality of lead portions 43 (at least the plurality of inner lead portions 43B) has a constant first width W1 in the second direction Y. The first width W1 may be 0.1 μm or more and 5 μm or less. Of course, the plurality of lead portions 43 may have different first widths W1.

[0064] In this way, the multiple lead portions 43 face the drain drift region 27 across the gate insulating film 30 (second portion 32), and face the drain drift region 27 across the field insulating film 35. In other words, the multiple lead portions 43 form a first gate-drain capacitance Cgd1 in the portion covering the gate insulating film 30 (second portion 32), and form a second gate-drain capacitance Cgd2 in the portion covering the field insulating film 35.

[0065] The second electrode portion 42 has at least one (in this embodiment, multiple) exposed portion 44 defined by at least one (in this embodiment, multiple) drawn-out portion 43. The exposed portion 44 is a portion where the second electrode portion 42 (gate electrode 40) is partially removed to partially expose the second portion 32, and may also be referred to as a removed portion. The number of exposed portions 44 is adjusted as appropriate depending on the number of drawn-out portions 43 and the length of the gate electrode 40 (gate insulating film 30) in the second direction Y.

[0066] The multiple exposed portions 44 are each defined between two adjacent lead portions 43. The multiple exposed portions 44 are each defined by at least one side (multiple sides in this embodiment) extending in the opposing direction (first direction X) of the drain region 23 and the source region 24 on the second portion 32. Specifically, the multiple exposed portions 44 are each defined by at least two sides extending in directions intersecting each other in the second electrode portion 42. In this embodiment, the multiple exposed portions 44 are each defined by a side extending in the second direction Y and a side extending in the first direction X.

[0067] The sides extending in the first direction X are each formed by a plurality of lead-out portions 43. The sides extending in the second direction Y are each formed by the base ends of the plurality of lead-out portions 43. In other words, the plurality of exposed portions 44 are each defined by a plurality of sides of the plurality of lead-out portions 43. The "sides" referred to here do not necessarily need to extend linearly in a plan view, but may be curved.

[0068] The multiple exposed portions 44 each extend in a strip shape from the second portion 32 toward the drain region 23 in a plan view, and are arranged at intervals in the second direction Y. That is, in this embodiment, the multiple exposed portions 44 are each formed from an open region (cutout portion) of the second electrode portion 42, and are partitioned into stripes extending in the first direction X as a whole in a plan view. The multiple exposed portions 44 are preferably arranged at equal intervals in the second direction Y.

[0069] When a line is set connecting the multiple lead portions 43 in the second direction Y, the multiple exposed portions 44 are located on the line. In other words, the multiple exposed portions 44 are arranged alternately with the multiple lead portions 43 at intervals in the second direction Y, sandwiching one lead portion 43 between them. As a result, the second electrode portion 42 (multiple exposed portions 44) exposes multiple locations of the second portion 32 in a line in the second direction Y at intervals in plan view.

[0070] The multiple exposed portions 44 each expose the second portion 32 at intervals from the first portion 31 toward the drain region 23 in a plan view. That is, with respect to the gate insulating film 30, the multiple exposed portions 44 each expose only the second portion 32 and do not expose the first portion 31. The multiple exposed portions 44 each expose the second portion 32 at intervals from the drain region 23 toward the second portion 32 in a plan view. It is preferable that the multiple exposed portions 44 are formed only within a region surrounded by the periphery of the drain well region 21 in a plan view.

[0071] The multiple exposed portions 44 face the drain region 23 on one side in the first direction X in a plan view, and face the source region 24 (channel inversion region 26) on the other side in the first direction X. It is preferable that all of the multiple exposed portions 44 face the drain region 23 on one side in the first direction X in a plan view. It is preferable that all of the multiple exposed portions 44 face the source region 24 (channel inversion region 26) on the other side in the first direction X in a plan view.

[0072] The multiple exposed portions 44 further partially expose a portion of the field insulating film 35 in a region between the multiple drawn-out portions 43. That is, the multiple exposed portions 44 continuously expose the second portion 32 of the gate insulating film 30 and a portion of the field insulating film 35. In this case, the multiple exposed portions 44 are each defined by at least one side (multiple in this embodiment) extending in the opposing direction (first direction X) of the drain region 23 and the source region 24 on the field insulating film 35. The opposing direction (first direction X) is also the direction in which the drain-source current flows. The sides extending in the opposing direction are each formed by the multiple drawn-out portions 43. The "side" referred to here does not necessarily have to extend linearly in a plan view and may be curved.

[0073] The multiple exposed portions 44 are each formed in a strip shape extending continuously in the first direction X from the second portion 32 toward the field insulating film 35, and are formed at intervals in the second direction Y. When a line is set on the field insulating film 35 connecting the multiple drawn-out portions 43 in the second direction Y, the multiple exposed portions 44 are located on the line. In other words, the multiple exposed portions 44 are also formed on the field insulating film 35 alternately with the multiple drawn-out portions 43 in a manner that sandwiches one drawn-out portion 43 in the second direction Y. Furthermore, the second electrode portion 42 (the multiple exposed portions 44) exposes multiple locations of the field insulating film 35 in a line at intervals in the second direction Y in a plan view.

[0074] Preferably, each of the multiple exposed portions 44 has a constant second width W2 in the second direction Y. The second width W2 may be 0.1 μm or more and 5 μm or less. Of course, the multiple exposed portions 44 may have different second widths W2. The second width W2 may be greater than or equal to the first width W1 (W1≦W2) or less than the first width W1 (W1>W2).

[0075] In this way, the multiple exposed portions 44 partially expose the gate insulating film 30 (second portion 32) and partially expose the field insulating film 35. Specifically, the multiple exposed portions 44 partially expose the gate insulating film 30 (second portion 32) and the field insulating film 35 in portions adjacent to the drawn-out portion 43 in the second direction Y. The multiple exposed portions 44 reduce the first gate drain capacitance Cgd1 in portions exposing the gate insulating film 30 (second portion 32) and reduce the second gate drain capacitance Cgd2 in portions exposing the field insulating film 35.

[0076] The plane area (total plane area) of the multiple exposed portions 44 may be equal to or greater than the plane area (total plane area) of the multiple drawn-out portions 43, or may be less than the plane area (total plane area) of the multiple drawn-out portions 43. The plane area (total plane area) of the portions of the multiple exposed portions 44 located on the field insulating film 35 may be equal to or greater than the plane area (total plane area) of the portions of the multiple exposed portions 44 located on the gate insulating film 30, or may be less than the plane area (total plane area) of the portions of the multiple exposed portions 44 located on the gate insulating film 30.

[0077] The drawn-out portion 43 shields the electric field generated on the semiconductor chip 2 side, while the exposed portion 44 allows the electric field generated on the semiconductor chip 2 side to pass through. This thins out the electric field applied to the gate electrode 40, and the electric field on the gate electrode 40 is alleviated. Increasing or decreasing the first width W1 of the drawn-out portion 43 (the second width W2 of the exposed portion 44) changes the effect of shielding the electric field on the gate electrode 40. As an example, assuming the same number of drawn-out portions 43 (for example, a single drawn-out portion 43), narrowing the first width W1 of the drawn-out portion 43 widens the second width W2 of the exposed portion 44.

[0078] In this case, the first gate-drain capacitance Cgd1 and the second gate-drain capacitance Cgd2 decrease. If the first width W1 is narrowed too much, the electric field passing through the exposed portion 44 increases, which may result in the electric field concentrating on the gate electrode 40 near the channel inversion region 26. In consideration of the properties of the gate electrode 40, it is preferable that the first width W1 of each of the multiple drawn-out portions 43 be set to at least 0.5 μm (i.e., 0.5 μm or more). It is also preferable that the second width W2 of each of the multiple exposed portions 44 be set to at most 1 μm (i.e., 1 μm or less).

[0079] In this way, the number, planar shape, first width W1, etc. of the drawn-out portions 43 are appropriately adjusted according to the electric field generated on the semiconductor chip 2 side. In addition, the number, planar shape, second width W2, etc. of the exposed portions 44 are appropriately adjusted according to the electric field generated on the semiconductor chip 2 side. Gate electrodes 40 according to second to fifth embodiment examples will be described below with reference to FIGS. 7A to 7E.

[0080] Fig. 7A is an enlarged view showing region II shown in Fig. 1 together with a gate electrode 40 according to a second embodiment. In Fig. 7A, the same reference numerals are used for the structures shown in Figs. 1 to 6, and descriptions thereof will be omitted.

[0081] 7A, the second portion 32 of the gate electrode 40 according to the second embodiment includes an extension 45 extending in the second direction Y on the field insulating film 35. The extension 45 is connected to a plurality of lead-out portions 43. As a result, the second portion 32 includes a plurality of exposed portions 44 defined by the lead-out portions 43 and the extension 45 in a plan view. In this embodiment, the plurality of exposed portions 44 are each formed as a closed region (opening) of the second electrode portion 42. In the gate electrode 40 according to the second embodiment, the lattice-shaped second electrode portion 42 can be considered to be led out from the first electrode portion 41 in a plan view.

[0082] 7B is an enlarged view showing region II shown in FIG. 1 together with gate electrode 40 according to the third embodiment. In FIG. 7B, the same reference numerals are used for the structures shown in FIGS. 1 to 6, and descriptions thereof will be omitted.

[0083] 7B , the second portion 32 of the gate electrode 40 according to the third embodiment includes two lead portions 43 and one extension portion 45. In this embodiment, outer lead portions 43A are formed as the two lead portions 43, but the two lead portions 43 may be inner lead portions 43B. The two lead portions 43 are led out from both ends of the first portion 31 of the gate electrode 40 in the second direction Y toward the drain region 23. The one extension portion 45 is formed in a strip shape extending in the second direction Y and is connected to the two lead portions 43.

[0084] As a result, the second portion 32 includes a single exposed portion 44 defined by two drawn-out portions 43 and one extended portion 45 in plan view. In this embodiment, the single exposed portion 44 is made up of a closed region (opening) of the second electrode portion 42, and is formed in a strip shape extending in the second direction Y. In the gate electrode 40 according to the third embodiment, the second electrode portion 42, which is annular in plan view (a square annular in this embodiment), can be considered to be drawn out from the first electrode portion 41.

[0085] 7C is an enlarged view showing region II shown in FIG. 1 together with gate electrode 40 according to the fourth embodiment. In FIG. 7C, the same reference numerals are used for the structures shown in FIGS. 1 to 6, and descriptions thereof will be omitted.

[0086] 7C , the second portion 32 of the gate electrode 40 according to the fourth embodiment includes two lead portions 43 and a plurality of extension portions 45. In this embodiment, an example is shown in which outer lead portions 43A are formed as the two lead portions 43, but the two lead portions 43 may be inner lead portions 43B. The two lead portions 43 are led out from both ends of the first portion 31 of the gate electrode 40 in the second direction Y toward the drain region 23. The plurality of extension portions 45 are each formed in a strip shape extending in the second direction Y at intervals in the first direction X, and are connected to the two lead portions 43, respectively.

[0087] As a result, the second portion 32 includes a plurality of exposed portions 44 defined by two drawn portions 43 and a plurality of extending portions 45 in a plan view. In this embodiment, the plurality of exposed portions 44 are each formed from a closed region (opening) of the second electrode portion 42, and are each formed in a strip shape extending in the second direction Y with a gap in the first direction X. In other words, the plurality of exposed portions 44 are formed in a strip shape extending in the second direction Y in a plan view. At least one of the plurality of exposed portions 44 exposes at least the field insulating film 35. In the gate electrode 40 according to the fourth embodiment, the ladder-shaped second electrode portion 42 can be considered to be drawn out from the first electrode portion 41 in a plan view.

[0088] Fig. 7D is an enlarged view showing region II shown in Fig. 1 together with the gate electrode 40 according to the fifth embodiment. In Fig. 7D, the same reference numerals are used for the structures shown in Figs. 1 to 6, and descriptions thereof will be omitted.

[0089] 7D , the second portion 32 of the gate electrode 40 according to the fifth embodiment includes a plurality of lead portions 43 and a plurality of extension portions 45. As in the first embodiment, the plurality of lead portions 43 are led out from the first portion 31 of the gate electrode 40 toward the drain region 23. The plurality of extension portions 45 are each formed in a strip shape extending in the second direction Y at intervals in the first direction X, and are connected to the plurality of lead portions 43, respectively.

[0090] As a result, the second portion 32 includes a plurality of exposed portions 44 defined by a plurality of drawn portions 43 and a plurality of extended portions 45 in a plan view. In this embodiment, the plurality of exposed portions 44 are each formed of a closed region (opening) of the second electrode portion 42, and are arranged in a matrix at intervals in the first direction X and the second direction Y. At least one of the plurality of exposed portions 44 exposes at least the field insulating film 35. In the gate electrode 40 according to the fifth embodiment, the second electrode portion 42, which has a lattice shape with a plurality of crosses in a plan view, can be considered to be drawn out from the first electrode portion 41.

[0091] 7E is an enlarged view showing region II shown in FIG. 1 together with a gate electrode 40 according to the sixth embodiment. In FIG. 7E, the same reference numerals are used for the structures shown in FIGS. 1 to 6, and descriptions thereof will be omitted.

[0092] 7E, the second portion 32 of the gate electrode 40 according to the sixth embodiment includes a plurality of lead portions 43 and a plurality of extension portions 45. The plurality of lead portions 43 are each drawn in a strip shape from the first portion 31 of the gate electrode 40 toward the drain region 23 in a plan view. In this embodiment, the plurality of lead portions 43 are formed in a zigzag shape while bending to one side and the other side in the second direction Y in a plan view.

[0093] The multiple extension portions 45 are each formed in a strip shape extending in the second direction Y at intervals in the first direction X, and are connected to the multiple lead portions 43, respectively. As a result, the second portion 32 includes multiple exposed portions 44 defined by the multiple lead portions 43 and the multiple extension portions 45 in a plan view. In this embodiment, the multiple exposed portions 44 are each formed from a closed region (opening) of the second electrode portion 42, and are arranged in a staggered pattern at intervals in the first direction X and the second direction Y. At least one of the multiple exposed portions 44 exposes at least the field insulating film 35.

[0094] The gate electrode 40 according to the sixth embodiment can be considered to have a configuration in which the multiple exposed portions 44 in the gate electrode 40 according to the fifth embodiment are arranged in a staggered pattern at intervals in the first direction X and the second direction Y. Furthermore, the gate electrode 40 according to the sixth embodiment can be considered to have grid-shaped second electrode portions 42 having multiple T-junctions in a plan view, which are drawn out from the first electrode portion 41.

[0095] The features of the gate electrode 40 according to the first to sixth embodiment examples can be combined in any manner. That is, the semiconductor device 1 may have a gate electrode 40 that simultaneously includes at least two of the features of the gate electrode 40 according to the first to sixth embodiment examples.

[0096] As described above, the semiconductor device 1 includes the semiconductor chip 2, the n-type drain region 23, the n-type source region 24, the channel inversion region 26, the drain drift region 27, the gate insulating film 30, and the gate electrode 40. The semiconductor chip 2 has a first main surface 3. The drain region 23 is formed in a surface layer portion of the first main surface 3. The source region 24 is formed in a surface layer portion of the first main surface 3 at a distance from the drain region 23. The channel inversion region 26 is formed on the source region 24 side between the drain region 23 and the source region 24 in the surface layer portion of the first main surface 3. The drain drift region 27 is formed in a region between the drain region 23 and the channel inversion region 26 in the surface layer portion of the first main surface 3.

[0097] The gate insulating film 30 includes a first portion 31 and a second portion 32. The first portion 31 covers the channel inversion region 26 on the first major surface 3. The second portion 32 covers the drain drift region 27 on the first major surface 3. The gate electrode 40 includes a first electrode portion 41 and a second electrode portion 42. The first electrode portion 41 covers the first portion 31 of the gate insulating film 30. The second electrode portion 42 is drawn out from the first electrode portion 41 onto the second portion 32 so as to partially expose the second portion 32.

[0098] According to this structure, the second electrode portion 42 forms a gate-drain capacitance Cgd between the drain drift region 27 and the second portion 32 at the portion covering the second electrode portion 42. Because the second electrode portion 42 partially exposes the second portion 32, the opposing area of ​​the second electrode portion 42 with respect to the drain drift region 27 can be reduced. This reduces the gate-drain capacitance Cgd. As a result, the switching delay of the MISFET 10 can be suppressed, and therefore the switching loss can be suppressed. Therefore, a semiconductor device 1 with improved electrical characteristics can be provided.

[0099] In this case, the second electrode portion 42 preferably has a side that extends in the opposing direction of the drain region 23 and the source region 24 (first direction X) and partially exposes the second portion 32. The second electrode portion 42 preferably has at least two sides that extend in directions that intersect with each other in a plan view and partially expose the second portion 32. The second electrode portion 42 preferably has a side that extends in one direction (first direction X) on the second portion 32 in a plan view, and a side that extends in an intersecting direction (second direction Y) that intersects with the one direction.

[0100] The first electrode unit 41 preferably covers the entire first portion 31 in a plan view. This structure allows the channel inversion region 26 to be appropriately controlled. The second electrode unit 42 preferably exposes the second portion 32 at a distance from the first portion 31 in a plan view. This structure allows the channel inversion region 26 to be appropriately controlled. The second electrode unit 42 preferably exposes the second portion 32 only within a region surrounded by the periphery of the drain well region 21 in a plan view. This structure allows the gate-drain capacitance Cgd to be appropriately reduced. It is particularly preferable that the second electrode unit 42 exposes only the second portion 32 in the gate insulating film 30.

[0101] It is preferable that first portion 31 covers the entire channel inversion region 26 in a plan view, and second portion 32 does not cover the entire drain drift region 27 in a plan view. In other words, it is preferable that second portion 32 partially exposes and partially covers drain drift region 27. With this structure, it is possible to appropriately control channel inversion region 26 and appropriately reduce gate-drain capacitance Cgd.

[0102] The second electrode unit 42 preferably exposes a plurality of locations of the second portion 32. With this structure, the electric field applied to the gate electrode 40 can be thinned out by the plurality of locations of the second portion 32. This reduces the electric field concentration on the gate electrode 40, and improves the withstand voltage (e.g., breakdown voltage). In this case, the second electrode unit 42 is preferably arranged regularly in a plan view, as shown in FIGS. 2 and 7A to 7E. The second electrode unit 42 may expose a plurality of locations of the second portion 32 at intervals in a line in either one or both of the first direction X and the second direction Y.

[0103] The semiconductor device 1 preferably includes a field insulating film 35. The field insulating film 35 preferably has a thickness different from that of the gate insulating film 30. In this case, it is particularly preferable that the field insulating film 35 has a thickness greater than that of the gate insulating film 30. This structure makes it possible to obtain the effect of improving the breakdown voltage by the field insulating film 35. The field insulating film 35 preferably covers the drain drift region 27 on the first main surface 3 so as to be continuous with at least the second portion 32. It is particularly preferable that the field insulating film 35 be continuous with the first portion 31 and the second portion 32.

[0104] The second electrode portion 42 is preferably extended from above the second portion 32 onto the field insulating film 35 and faces the drain drift region 27 across the field insulating film 35. This structure can reduce the gate-drain capacitance Cgd in a structure that includes the field insulating film 35. In this case, the second electrode portion 42 preferably partially exposes the field insulating film 35.

[0105] The second electrode portion 42 forms a gate-drain capacitance Cgd between itself and the drain drift region 27 in a portion that covers the field insulating film 35. With this structure, the second electrode portion 42 partially exposes the field insulating film 35, thereby reducing the facing area of ​​the second electrode portion 42 with respect to the drain drift region 27. This makes it possible to reduce the gate-drain capacitance Cgd even in the portion of the second electrode portion 42 that covers the field insulating film 35.

[0106] The second electrode portion 42 may be extended from above the second portion 32 onto the field insulating film 35 so as to continuously expose the field insulating film 35 from the portion that partially exposes the second portion 32. The second electrode portion 42 preferably extends in at least the opposing direction (first direction X) of the drain region 23 and the source region 24 in a plan view and has a side that partially exposes the field insulating film 35.

[0107] The second electrode portions 42 preferably expose a plurality of locations of the field insulating film 35. With this structure, the electric field applied to the gate electrode 40 can be thinned out by the plurality of locations of the field insulating film 35. This reduces the electric field concentration on the gate electrode 40, improving the withstand voltage (e.g., breakdown voltage). In this case, the second electrode portions 42 are preferably arranged regularly on the field insulating film 35 in a plan view, as shown in FIGS. 2 and 7A to 7E. The second electrode portions 42 may expose a plurality of locations of the field insulating film 35 at intervals in a line in either or both of the first direction X and the second direction Y.

[0108] In this embodiment, the semiconductor device 1 includes a p-type second semiconductor region 7 and an n-type drain well region 21. The second semiconductor region 7 is formed in a surface layer portion of the first main surface 3. The drain well region 21 is formed in a surface layer portion of the second semiconductor region 7. In this structure, a drain region 23 is formed in a surface layer portion of the drain well region 21. A source region 24 is formed in a surface layer portion of the second semiconductor region 7 at a distance from the drain well region 21. A channel inversion region 26 is formed in a region between the drain well region 21 and the source region 24. A drain drift region 27 is formed in the drain well region 21.

[0109] The semiconductor device 1 may include a source well region 22 formed in a surface layer portion of the second semiconductor region 7 at a distance from the drain well region 21. In this case, the source region 24 may be formed in a surface layer portion of the source well region 22. In this structure, the semiconductor device 1 may include a contact region 25 formed in a surface layer portion of the source well region 22.

[0110] Fig. 8 is a schematic diagram showing a semiconductor device 51 according to a second embodiment of the present invention. Fig. 9 is an enlarged view showing region IX shown in Fig. 8 together with a gate electrode 40 according to the first embodiment. Fig. 10 is a cross-sectional view taken along line XX shown in Fig. 9. Fig. 11 is a cross-sectional view taken along line XI-XI shown in Fig. 9. Hereinafter, structures corresponding to those described with respect to the semiconductor device 1 will be given the same reference numerals, and descriptions thereof will be omitted.

[0111] 8 to 11, similar to the semiconductor device 1 according to the first embodiment, the semiconductor device 51 includes a semiconductor chip 2, a first semiconductor region 6, a second semiconductor region 7, a plurality of device regions 8, and a region isolation structure 11. In this embodiment, the conductivity type of the second semiconductor region 7 is changed from p-type (first conductivity type) to n-type (second conductivity type). The n-type impurity concentration of the second semiconductor region 7 is 5×10 14 cm -3 5x10 or more 15 cm -3 The thickness of the second semiconductor region 7 may be 3 μm or more and 15 μm or less. In this embodiment, the second semiconductor region 7 is formed by an n-type epitaxial layer.

[0112] The region isolation structure 11 includes a p-type first isolation structure 12 and an n-type second isolation structure 15. In this embodiment, the second isolation structure 15 includes an n-type second buried region 16 but does not include an n-type second isolation region 17.

[0113] Similar to the semiconductor device 1 according to the first embodiment, the semiconductor device 51 includes at least one MISFET cell 20 formed in a MISFET region 9. The MISFET cell 20 includes a drain well region 21, a source well region 22, a drain region 23, a source region 24, a contact region 25, a channel inversion region 26, and a drain drift region 27. The drain well region 21, the source well region 22, the drain region 23, the source region 24, and the contact region 25 are each formed in the same manner as in the semiconductor device 1 according to the first embodiment.

[0114] The MISFET cell 20 includes a channel inversion region 26 formed in a region between the drain region 23 and the source region 24 in the surface layer portion of the first main surface 3. In Figures 10 and 11, the channel inversion region 26 is indicated by a thick dashed line. The channel inversion region 26 is a region where the conduction and blocking of the current path formed between the drain region 23 and the source region 24 is controlled. The current flowing between the drain region 23 and the source region 24 is a drain-source current.

[0115] The channel inversion region 26 is formed on the source region 24 side in the region between the drain region 23 and the source region 24. In this embodiment, the channel inversion region 26 is formed between the second semiconductor region 7 and the source region 24 in the surface layer portion of the source well region 22. In this embodiment, the channel inversion region 26 is formed in a strip shape extending in the second direction Y across the entire region between the periphery of the source well region 22 and the source region 24 in plan view.

[0116] The MISFET cell 20 includes a drain drift region 27 formed in a region between the drain region 23 and the channel inversion region 26 in the surface layer portion of the first main surface 3. In Figures 10 and 11, the drain drift region 27 is indicated by a thin dashed line. The drain drift region 27 is a region that serves as a current path between the drain region 23 and the source region 24. The current that flows between the drain region 23 and the source region 24 is a drain-source current.

[0117] Specifically, the drain drift region 27 is formed in the region between the source well region 22 and the drain region 23. That is, in this embodiment, the drain drift region 27 is formed in the second semiconductor region 7 and the drain well region 21 located in the region between the source well region 22 and the drain region 23. The drain drift region 27 is formed in a strip shape extending in the second direction Y across the entire opposing region between the drain region 23 and the source well region 22 in plan view.

[0118] Similar to the semiconductor device 1 according to the first embodiment, the MISFET cell 20 includes a gate insulating film 30, a field insulating film 35, and a gate electrode 40 formed on the first main surface 3 in the MISFET region 9. In Fig. 9, the end of the field insulating film 35 is indicated by a thick dashed line, and the gate electrode 40 is indicated by hatching. In this embodiment, an example is shown in which the MISFET cell 20 includes the gate electrode 40 according to the first embodiment example (see also Fig. 2 etc.).

[0119] The gate insulating film 30 covers the region between the drain region 23 and the source region 24 on the first main surface 3 in the form of a film. Specifically, the gate insulating film 30 is formed on the first main surface 3 across the source region 24 and the drain drift region 27 (drain well region 21), and covers the second semiconductor region 7, the source region 24, the channel inversion region 26, and the drain drift region 27.

[0120] Specifically, the gate insulating film 30 includes a first portion 31 and a second portion 32. The first portion 31 covers the source well region 22 and a portion of the source region 24 on the first main surface 3. That is, the first portion 31 covers the channel inversion region 26 on the first main surface 3. The first portion 31 preferably covers the entire channel inversion region 26. The first portion 31 is formed at an interval from the contact region 25 toward the source region 24 in a plan view, and exposes a portion of the source region 24 and the entire contact region 25. The first portion 31 has a first length L1 in the first direction X.

[0121] Second portion 32 extends from first portion 31 toward drain region 23, and covers second semiconductor region 7 and drain well region 21 on first main surface 3. That is, second portion 32 covers drain drift region 27 on first main surface 3. Specifically, second portion 32 is formed at an interval from drain region 23 toward source region 24 in plan view, exposes a part of drain well region 21 (specifically, the end portion on the fourth side surface 5D side) and the entire drain region 23, and partially covers drain drift region 27.

[0122] It is preferable that the planar area of the second part 32 is less than the planar area of the portion exposed from the second part 32 in the drain drift region 27. The second part 32 has a second length L2 in the first direction X. It is preferable that the second length L2 exceeds the first length L1 (L1 < L2).

[0123] In this form, the gate electrode 40 is formed across the source region 24 and the drain drift region 27 (drain well region 21) on the gate insulating film 30, covering the second semiconductor region 7, the drain drift region 27, the channel inversion region 26, and the source region 24 with the gate insulating film 30 interposed therebetween. The gate electrode 40 has a planar shape different from the planar shape of the gate insulating film 30.

[0124] Similar to the semiconductor device 1 according to the first embodiment, the gate electrode 40 includes a first electrode portion 41 and a second electrode portion 42 formed with different planar shapes in different regions on the gate insulating film 30. In this form, the first electrode portion 41 is formed on the first portion 31 of the gate insulating film 30 and faces a part of the source well region 22 and the source region 24 with the first portion 31 interposed therebetween. That is, the first electrode portion 41 faces the channel inversion region 26 with the first portion 31 interposed therebetween.

[0125] It is preferable that the first electrode portion 41 faces the entire area of the channel inversion region 26 with the first portion 31 interposed therebetween. It is preferable that the gate electrode 40 (first electrode portion 41) is drawn out to a region outside the channel inversion region 26 across the periphery of the channel inversion region 26 in the second direction Y in a plan view. The portion of the gate electrode 40 drawn out to the region outside the channel inversion region 26 may be formed as a connection portion of a gate contact electrode (not shown). The first electrode portion 41 is formed at an interval from the contact region 25 toward the source region 24 in a plan view, exposing the source region 24 and the contact region 25.

[0126] The second electrode unit 42 is formed on the second portion 32 of the gate insulating film 30. Specifically, the second electrode unit 42 is drawn from the first electrode unit 41 onto the second portion 32 so as to partially expose the second portion 32, and faces a part of the drain drift region 27 across the second portion 32. The second electrode unit 42 is further drawn from above the second portion 32 onto the field insulating film 35, and faces the drain drift region 27 across the field insulating film 35.

[0127] The second electrode unit 42 forms a gate-drain capacitance Cgd between itself and the drain drift region 27. The gate-drain capacitance Cgd includes a first gate-drain capacitance Cgd1 and a second gate-drain capacitance Cgd2 connected in parallel to the first gate-drain capacitance Cgd1. In this embodiment, the first gate-drain capacitance Cgd1 is formed in a portion of the second electrode unit 42 facing the second semiconductor region 7 and the drain well region 21 with the gate insulating film 30 interposed therebetween. In this embodiment, the second gate-drain capacitance Cgd2 is formed in a portion of the second electrode unit 42 facing the drain well region 21 with the field insulating film 35 interposed therebetween.

[0128] Similar to the semiconductor device 1 according to the first embodiment, the second electrode portion 42 has at least one (in this embodiment, multiple) lead-out portion 43 that is led out from the first electrode portion 41 onto the second portion 32 so as to partially expose the second portion 32 between the first electrode portion 41. In this embodiment, the multiple lead-out portions 43 are led out from a region between the drain well region 21 and the source well region 22 toward the drain region 23 in plan view. The multiple lead-out portions 43 are led out from positions spaced apart from the source well region 22 toward the drain well region 21.

[0129] In this embodiment, the multiple lead portions 43 face the second semiconductor region 7 and the drain well region 21 with the gate insulating film 30 (second portion 32) interposed therebetween, and face the second semiconductor region 7 and the drain well region 21 with the field insulating film 35 interposed therebetween. That is, the multiple lead portions 43 form a first gate-drain capacitance Cgd1 with the drain drift region 27 in the portion covering the gate insulating film 30 (second portion 32). Furthermore, the multiple lead portions 43 form a second gate-drain capacitance Cgd2 with the drain drift region 27 in the portion covering the field insulating film 35.

[0130] In this embodiment, an example has been described in which the multiple lead portions 43 face the second semiconductor region 7 with the second portion 32 interposed therebetween. However, the multiple lead portions 43 do not necessarily need to face the second semiconductor region 7. In other words, the multiple lead portions 43 may be led out from positions spaced apart from the second semiconductor region 7 toward the drain well region 21, and may cover the drain well region 21 with the second portion 32 interposed therebetween. In this case, the second electrode portion 42 may cover the entire area of ​​the portion of the second portion 32 that covers the second semiconductor region 7.

[0131] Similar to the semiconductor device 1 according to the first embodiment, the second electrode portion 42 has at least one (in this embodiment, multiple) exposed portion 44 defined by at least one (in this embodiment, multiple) drawn-out portion 43 so as to partially expose the second portion 32. In this embodiment, the multiple exposed portions 44 extend from a region between the drain well region 21 and the source well region 22 toward the drain region 23 in plan view.

[0132] In this embodiment, the multiple exposed portions 44 partially expose the portions of the second portion 32 that cover the second semiconductor region 7 and the drain well region 21, and partially expose the field insulating film 35. In other words, the multiple exposed portions 44 reduce the first gate-drain capacitance Cgd1 in the portions that expose the second semiconductor region 7 and the drain well region 21, and reduce the second gate-drain capacitance Cgd2 in the portions that expose the field insulating film 35.

[0133] As described above, the semiconductor device 51 can also achieve the same effects as those described for the semiconductor device 1. In this embodiment, an example has been described in which the semiconductor device 51 includes the gate electrode 40 according to the first embodiment described above. Of course, the semiconductor device 51 may include any one of the gate electrodes 40 according to the second to sixth embodiments instead of the gate electrode 40 according to the first embodiment. Furthermore, the semiconductor device 51 may have a gate electrode 40 that simultaneously includes at least two of the features of the gate electrode 40 according to the first to sixth embodiments described above.

[0134] The present invention can be embodied in still other forms.

[0135] In the first embodiment described above, a configuration may be adopted in which the source well region 22 and the contact region 25 are removed. In this case, the channel inversion region 26 is formed in the surface layer portion of the second semiconductor region 7 in the region between the drain well region 21 and the source region 24.

[0136] In the second embodiment described above, a configuration in which the drain well region 21 is removed may be employed. In this case, the drain drift region 27 is formed in the second semiconductor region 7. That is, the second electrode portion 42 may form a first gate-drain capacitance Cgd1 in a portion facing the second semiconductor region 7 across the gate insulating film 30, and may form a second gate-drain capacitance Cgd2 in a portion facing the second semiconductor region 7 across the field insulating film 35.

[0137] In the above-described embodiments, examples have been described in which the first conductivity type is p-type and the second conductivity type is n-type. However, the first conductivity type may be n-type and the second conductivity type may be p-type. A specific configuration in this case can be obtained by replacing n-type regions with p-type regions and p-type regions with n-type regions in the above description and accompanying drawings. In the above-described embodiments, examples have been described in which p-type is expressed as the first conductivity type and n-type is expressed as the second conductivity type. However, these are merely terms used to clarify the order of the description, and p-type may be expressed as the second conductivity type and n-type as the first conductivity type.

[0138] Below are examples of features extracted from this specification and drawings. The following [A1] to [A20], [B1] to [B5], and [C1] to [C5] provide a semiconductor device that can improve electrical characteristics. Below, alphanumeric characters in parentheses represent corresponding components in the above-mentioned embodiments, but are not intended to limit the scope of each item to the embodiments.

[0139] [A1] A chip (2) having a main surface (3), a drain region (23) formed in a surface layer portion of the main surface (3), a source region (24) formed in the surface layer portion of the main surface (3) at a distance from the drain region (23), a channel inversion region (26) formed on the source region (24) side between the drain region (23) and the source region (24) in the surface layer portion of the main surface (3), and a region between the drain region (23) and the channel inversion region (26) in the surface layer portion of the main surface (3). a gate insulating film (30) having a first portion (31) covering the channel inversion region (26) on the main surface (3) and a second portion (32) covering the drift region on the main surface (3); and a gate electrode (40) having a first electrode portion (41) covering the first portion (31) and a second electrode portion (42) extended from the first electrode portion (41) onto the second portion (32) so as to partially expose the second portion (32).

[0140] [A2] A semiconductor device (1, 51) according to A1, wherein the second electrode portion (42) extends in an opposing direction (X) of the drain region (23) and the source region (24) and has a side that partially exposes the second portion.

[0141] [A3] The semiconductor device (1, 51) according to A1 or A2, wherein the first electrode portion (41) covers the entire area of ​​the first portion (31) in plan view.

[0142] [A4] A semiconductor device (1, 51) according to any one of A1 to A3, wherein the second electrode portion (42) exposes the second portion (32) at a distance from the first portion (31) in a plan view.

[0143] [A5] The semiconductor device (1, 51) according to any one of A1 to A4, wherein the second electrode portion (42) exposes only the second portion (32) with respect to the gate insulating film (30).

[0144] [A6] A semiconductor device (1, 51) according to any one of A1 to A5, wherein the first portion (31) covers the entire area of ​​the channel inversion region (26) in a planar view, and the second portion (32) partially covers the drift region so as to partially expose the drift region in a planar view.

[0145] [A7] The semiconductor device (1, 51) according to any one of A1 to A6, wherein the second electrode portion (42) exposes a plurality of locations of the second portion (32).

[0146] [A8] The semiconductor device (1, 51) according to any one of A1 to A7, wherein the second electrode portion (42) exposes a plurality of locations of the second portion (32) in a line at intervals in a plan view.

[0147] [A9] A semiconductor device (1, 51) according to any one of A1 to A8, further comprising a field insulating film (35) covering the drift region on the main surface (3) and having a thickness different from that of the gate insulating film (30).

[0148] [A10] A semiconductor device (1, 51) according to A9, wherein the field insulating film (35) is continuous with the second portion (32), and the second electrode portion (42) is extended from above the second portion (32) onto the field insulating film (35) and faces the drift region across the field insulating film (35).

[0149] [A11] The semiconductor device (1, 51) according to A10, wherein the second electrode portion (42) partially exposes the field insulating film (35).

[0150] [A12] A semiconductor device (1, 51) according to A11, wherein the second electrode portion (42) extends in an opposing direction (X) of the drain region (23) and the source region (24) and has a side that partially exposes the field insulating film (35).

[0151] [A13] The semiconductor device (1, 51) according to A11 or A12, wherein the second electrode portion (42) exposes a plurality of portions of the field insulating film (35).

[0152] [A14] The semiconductor device (1, 51) according to any one of A11 to A13, wherein the second electrode portion (42) exposes a plurality of locations of the field insulating film (35) in a line in plan view.

[0153] [A15] The semiconductor device (1) according to any one of A1 to A14, further comprising: a semiconductor region of a first conductivity type (p-type) formed in a surface layer portion of the main surface (3); and a drain well region (21) of a second conductivity type (n-type) formed in a surface layer portion of the semiconductor region, wherein the drain region (23) of the second conductivity type (n-type) is formed in a surface layer portion of the drain well region (21), the source region (24) of the second conductivity type (n-type) is formed in the surface layer portion of the semiconductor region at a distance from the drain well region (21), the channel inversion region (26) is formed in a region between the drain well region (21) and the source region (24), and the drift region is formed in the drain well region (21).

[0154] [A16] The semiconductor device (1) according to A15, further comprising a source well region (22) of a first conductivity type (p-type) formed in a surface layer portion of the semiconductor region spaced apart from the drain well region (21), and the source region (24) is formed in a surface layer portion of the source well region (22).

[0155] [A17] The semiconductor device (1) according to A16, further comprising a contact region (25) of a first conductivity type (p-type) formed in a surface layer portion of the source well region (22).

[0156] [A18] The semiconductor device (51) according to any one of A1 to A14, further comprising: a semiconductor region of a first conductivity type (n-type) formed in a surface layer portion of the main surface (3); and a source well region (22) of a second conductivity type (p-type) formed in the surface layer portion of the semiconductor region, wherein the drain region (23) of the first conductivity type (n-type) is formed in the surface layer portion of the semiconductor region at a distance from the source well region (22), the source region (24) of the first conductivity type (n-type) is formed in the surface layer portion of the source well region (22), the channel inversion region (26) is formed in the surface layer portion of the source well region (22) between the semiconductor region and the source region (24), and the drift region is formed in a region between the source well region (22) and the drain region (23).

[0157] [A19] A semiconductor device (51) according to A18, further comprising a drain well region (21) of a first conductivity type (n-type) formed in a surface layer portion of the semiconductor region spaced apart from the source well region (22), and the drain region (23) is formed in a surface layer portion of the drain well region (21).

[0158] [A20] The semiconductor device (51) according to A18 or A19, further comprising a contact region (25) of a second conductivity type (p-type) formed in a surface layer portion of the source well region (22).

[0159] [B1] A chip (2) having a main surface (3), a semiconductor region of a first conductivity type (p-type) formed in a surface layer portion of the main surface (3), a drain well region (21) of a second conductivity type (n-type) formed in a surface layer portion of the semiconductor region, a drain region (23) of the second conductivity type (n-type) formed in a surface layer portion of the drain well region (21), and a second conductive layer (24) formed in the surface layer portion of the semiconductor region at a distance from the drain well region (21), forming a channel inversion region (26) between the drain well region (21) and the drain well region (21) in the surface layer portion of the semiconductor region. A semiconductor device (1) comprising: a source region (24) of a second conductivity type (n-type); a gate insulating film (30) having a first portion (31) covering the channel inversion region (26) on the main surface (3) and a second portion (32) covering the drain well region (21) on the main surface (3); and a gate electrode (40) having a first electrode portion (41) covering the first portion (31) and a second electrode portion (42) extended from the first electrode portion (41) onto the second portion (32) so as to partially expose the second portion (32).

[0160] [B2] The semiconductor device (1) according to B1, further comprising a source well region (22) of a first conductivity type (p-type) formed in a surface layer portion of the semiconductor region at a distance from the drain well region (21), and the source region (24) is formed in a surface layer portion of the source well region (22).

[0161] [B3] The semiconductor device (1) according to B2, further comprising a contact region (25) of a first conductivity type (p-type) formed in a surface layer portion of the source well region (22).

[0162] [B4] The semiconductor device (1) according to any one of B1 to B3, further comprising a field insulating film (35) covering the drain well region (21) on the main surface (3) and having a thickness different from that of the gate insulating film (30).

[0163] [B5] The semiconductor device (1) according to B4, wherein the field insulating film (35) is continuous with the second portion (32), and the second electrode portion (42) is extended from above the second portion (32) onto the field insulating film (35) and faces the drift region across the field insulating film (35).

[0164] [C1] A chip (2) having a main surface (3), a semiconductor region of a first conductivity type (n-type) formed in a surface layer portion of the main surface (3), a source well region (22) of a second conductivity type (p-type) formed in a surface layer portion of the semiconductor region, a drain region (23) of the first conductivity type (n-type) formed in a surface layer portion of the semiconductor region at a distance from the source well region (22), and a source region of the first conductivity type (n-type) formed in a surface layer portion of the source well region (22) and forming a channel inversion region (26) between the source well region (22) and the semiconductor region in the surface layer portion of the source well region (22). a gate insulating film (30) having a first portion (31) covering the channel inversion region (26) on the main surface (3) and a second portion (32) covering a region between the source well region (22) and the drain region (23) on the main surface (3); and a gate electrode (40) having a first electrode portion (41) covering the first portion (31) and a second electrode portion (42) extended from the first electrode portion (41) onto the second portion (32) so as to partially expose the second portion (32).

[0165] [C2] The semiconductor device (51) according to C1, further comprising a drain well region (21) of a first conductivity type (n-type) formed in a surface layer portion of the semiconductor region spaced apart from the source well region (22), and the drain region (23) is formed in a surface layer portion of the drain well region (21).

[0166] [C3] The semiconductor device (51) according to C1 or C2, further comprising a contact region (25) of a second conductivity type (p-type) formed in a surface layer portion of the source well region (22).

[0167] [C4] A semiconductor device (51) according to any one of C1 to C3, further comprising a field insulating film (35) covering the drain well region (21) on the main surface (3) and having a thickness different from that of the gate insulating film (30).

[0168] [C5] The semiconductor device (51) according to C4, wherein the field insulating film (35) is continuous with the second portion (32), and the second electrode portion (42) is extended from above the second portion (32) onto the field insulating film (35) and faces the drift region across the field insulating film (35).

[0169] Although the embodiments of the present invention have been described in detail, these are merely examples used to clarify the technical contents of the present invention, and the present invention should not be construed as being limited to these examples, and the scope of the present invention is limited by the appended claims. [Explanation of symbols]

[0170] 1. Semiconductor device 2. Semiconductor chips 3 First main surface 21 Drain well region 22 Source well region 23 Drain region 24 Source Region 25 Contact Area 26 Channel inversion region 30 Gate insulating film 31 Part 1 32 Part 2 35 Field insulating film 40 gate electrode 41 1st electrode part 42 Second electrode part 51 Semiconductor devices

Claims

1. a chip having a major surface; a drain region formed in a surface layer portion of the main surface; a source region formed in a surface layer portion of the main surface at a distance from the drain region; a channel inversion region formed between the drain region and the source region on the source region side in a surface layer portion of the main surface; a drift region formed in a surface portion of the main surface in a region between the drain region and the channel inversion region; a gate insulating film having a first portion covering the channel inversion region on the major surface and a second portion covering the drift region on the major surface; a gate electrode having a first electrode portion covering the first portion and a second electrode portion extended from the first electrode portion onto the second portion so as to partially expose the second portion; The semiconductor device, wherein the first electrode portion overlaps a part of the source region.

2. 2. The semiconductor device according to claim 1, wherein said second electrode portion has a side extending in a direction in which said drain region and said source region face each other and partially exposing said second portion.

3. The semiconductor device according to claim 1 , wherein the first electrode portion covers the entire first portion in a plan view.

4. 4. The semiconductor device according to claim 1, wherein the second electrode portion exposes the second portion at a distance from the first portion in a plan view.

5. 5. The semiconductor device according to claim 1, wherein said second electrode portion has only said second portion exposed with respect to said gate insulating film.

6. the first portion covers the entire channel inversion region in a plan view; 6. The semiconductor device according to claim 1, wherein the second portion partially covers the drift region so as to partially expose the drift region in a plan view.

7. 7. The semiconductor device according to claim 1, wherein the second electrode portion exposes a plurality of locations of the second portion.

8. 8. The semiconductor device according to claim 1, wherein the second electrode portion exposes a plurality of locations of the second portion in a line at intervals in a plan view.

9. 9. The semiconductor device according to claim 1, further comprising a field insulating film covering the drift region on the main surface and having a thickness different from a thickness of the gate insulating film.

10. the field insulating film is continuous with the second portion, 10. The semiconductor device according to claim 9, wherein said second electrode portion is extended from above said second portion onto said field insulating film and faces said drift region across said field insulating film.

11. The semiconductor device according to claim 10 , wherein said second electrode portion partially exposes said field insulating film.

12. 12. The semiconductor device according to claim 11, wherein said second electrode portion extends in a direction in which said drain region and said source region face each other, and has a side that partially exposes said field insulating film.

13. 13. The semiconductor device according to claim 11, wherein said second electrode portion exposes a plurality of portions of said field insulating film.

14. 14. The semiconductor device according to claim 11, wherein said second electrode portion exposes a plurality of portions of said field insulating film in a line in plan view.

15. a first conductivity type semiconductor region formed in a surface layer portion of the main surface; a drain well region of a second conductivity type formed in a surface layer portion of the semiconductor region, the drain region of the second conductivity type is formed in a surface layer portion of the drain well region, the source region of the second conductivity type is formed in a surface layer portion of the semiconductor region at a distance from the drain well region; the channel inversion region is formed in a region between the drain well region and the source region; 15. The semiconductor device according to claim 1, wherein the drift region is formed in the drain well region.

16. a source well region of a first conductivity type formed in a surface layer portion of the semiconductor region and spaced apart from the drain well region; 16. The semiconductor device according to claim 15, wherein said source region is formed in a surface layer portion of said source well region.

17. The semiconductor device according to claim 16 , further comprising a contact region of the first conductivity type formed in a surface layer portion of the source well region.

18. a first conductivity type semiconductor region formed in a surface layer portion of the main surface; a second conductivity type source well region formed in a surface layer portion of the semiconductor region, the drain region of the first conductivity type is formed in a surface layer portion of the semiconductor region at a distance from the source well region; the source region of the first conductivity type is formed in a surface layer portion of the source well region; the channel inversion region is formed between the semiconductor region and the source region in a surface layer portion of the source well region, 15. The semiconductor device according to claim 1, wherein the drift region is formed in a region between the source well region and the drain region.

19. a drain well region of a first conductivity type formed in a surface layer portion of the semiconductor region and spaced apart from the source well region; 19. The semiconductor device according to claim 18, wherein said drain region is formed in a surface layer portion of said drain well region.

20. 20. The semiconductor device according to claim 18, further comprising a contact region of the second conductivity type formed in a surface layer portion of the source well region.

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