Holding device

Abstract

To provide a retainer capable of improving a detection accuracy of a temperature detection part.SOLUTION: In an aspect of the present disclosure, a ceramic member 10 comprises: at least one of a heater electrode part 40 and a gas tunnel 50 opened to a holding surface 11 and a lower surface 12; and a temperature sensor 60 in an electrostatic chuck 1. In the case where the ceramic member 10 has the gas tunnel 50, the gas tunnel 50 comprises: a vertical hole 51 extended to a Z-axis direction from the lower surface 12; and a lateral hole 52 extended to an X-axis direction or a Y-axial direction, and is connected to the vertical hole 51. In view of the electrostatic chuck 1 from the Z-axis direction, at least one of a heater electrode overlapping level DH and a tunnel overlapping level DT is 20% or less or 80% or more.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a holding device for holding an object. [Background technology]

[0002] As a document relating to a holding device, Patent Document 1 discloses an electrostatic chuck having a thermistor (temperature detection unit) disposed in a recess formed in the lower surface of a ceramic member. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-220595 Summary of the Invention [Problem to be solved by the invention]

[0004] In the electrostatic chuck disclosed in Patent Document 1, a thermistor is disposed on the lower surface of a ceramic member, and a heater line portion, which is a linear resistance heating element constituting a heater electrode, is disposed above the thermistor. Here, there is a risk that the heater line portion and no heater line portion may coexist directly above the thermistor. This may result in variations in the temperature distribution directly above the thermistor, reducing the detection accuracy of the thermistor.

[0005] Therefore, the present disclosure has been made to solve the above-mentioned problems, and has an object to provide a holding device that improves the detection accuracy of a temperature detection unit. [Means for solving the problem]

[0006] In one embodiment of the present disclosure made to solve the above problem, there is provided a holding device having a first plate-shaped member with a first surface and a second surface provided on the opposite side of the first surface in a first direction, and holding an object on the first surface of the first plate-shaped member, wherein the first plate-shaped member is provided with a heater electrode unit, at least one of a gas tunnel opening on the first surface and the second surface, and a temperature detection unit, and when the first plate-shaped member is provided with the gas tunnel, the gas tunnel is provided on the second surface and a horizontal hole extending in a second direction that is substantially perpendicular to the first direction and connected to the vertical hole, wherein when the holding device is viewed from the first direction, at least one of a heater electrode overlap degree, which is the rate at which the heater electrode overlaps with the arrangement area of ​​the temperature detection unit, and a tunnel overlap degree, which is the rate at which the horizontal hole of the gas tunnel overlaps with the arrangement area of ​​the temperature detection unit, is 20% or less or 80% or more.

[0007] According to this aspect, when the holding device is viewed from the first direction, at least one of the heater electrode unit and the horizontal hole of the gas tunnel is configured to almost completely or almost completely overlap with the temperature detection unit. This makes it possible to suppress variations in temperature distribution near the temperature detection unit due to the influence of the heater electrode unit or the horizontal hole of the gas tunnel. This improves the detection accuracy of the temperature detection unit. Therefore, it is possible to ensure uniform heating of the first surface of the first plate-shaped member based on the detection results of the temperature detection unit.

[0008] In the above aspect, it is preferable that the holding device has a second plate-shaped member having a third surface and a fourth surface located on the opposite side of the third surface in the first direction, the second surface of the first plate-shaped member and the third surface of the second plate-shaped member are thermally connected, the second plate-shaped member has a cooling flow path extending in the second direction and through which cooling water flows, and when the holding device is viewed from the first direction, the cooling flow path overlap rate, which is the percentage by which the cooling flow path overlaps with the arrangement area of ​​the temperature detection unit, is 20% or less or 80% or more.

[0009] According to this aspect, when the holding device is viewed from the first direction, the cooling flow path does not overlap the temperature detection unit or overlaps it almost entirely. This makes it possible to suppress variations in temperature distribution near the temperature detection unit due to the influence of the cooling flow path. Therefore, even if the cooling flow path is provided in the second plate-like member, the detection accuracy of the temperature detection unit is maintained.

[0010] In the above aspect, it is preferable that at least one of the heater electrode portion overlapping degree and the tunnel overlapping degree is 100%.

[0011] According to this aspect, when the holding device is viewed from the first direction, at least one of the heater electrode and the gas tunnel overlaps the entire temperature detection unit, which more reliably suppresses variations in temperature distribution near the temperature detection unit due to the influence of the heater electrode and the gas tunnel.

[0012] In the above aspect, it is preferable that at least one of the heater electrode portion overlapping degree and the tunnel overlapping degree is 0%.

[0013] According to this aspect, when the holding device is viewed from the first direction, at least one of the heater electrode and the horizontal hole of the gas tunnel does not overlap with the temperature detection unit, which more reliably suppresses variations in temperature distribution near the temperature detection unit due to the influence of the heater electrode and the horizontal hole of the gas tunnel.

[0014] In the above aspect, it is preferable that a plurality of the temperature detection units are provided, and that at least one of the heater electrode overlap degree and the tunnel overlap degree is the same or approximately the same for all of the temperature detection units.

[0015] According to this aspect, when the holding device is viewed from the first direction, at least one of the heater electrode unit and the gas tunnel is configured to almost completely or almost not overlap with the temperature detection unit for all temperature detection units. This makes it possible to suppress variations in temperature distribution near the temperature detection unit for all temperature detection units. As a result, the detection accuracy of all temperature detection units is maintained almost constant. [Effects of the Invention]

[0016] According to the holding device of the present disclosure, the detection accuracy of the temperature detection unit is improved. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a schematic perspective view of an electrostatic chuck according to an embodiment of the present invention. [Figure 2] 1 is a side view (partially an XZ cross-sectional view) of an electrostatic chuck according to an embodiment of the present invention; [Figure 3] 10A and 10B are diagrams illustrating an example of the arrangement of temperature sensors on the lower surface of a ceramic member. [Figure 4] 10A and 10B are diagrams illustrating an example of the arrangement of temperature sensors on the lower surface of a ceramic member. [Figure 5] This is an image diagram showing the case where the heater electrode overlap rate (the ratio of the heater electrode heating element and linearly formed driver overlapping the temperature sensor placement area), the tunnel overlap rate, and the cooling channel overlap rate are 20% or less. [Figure 6] This is an image diagram showing the case where the heater electrode overlap rate (the ratio of the heater electrode heating element and linearly formed driver to the temperature sensor placement area), tunnel overlap rate, and cooling channel overlap rate are 80% or more. [Figure 7] FIG. 10 is an image diagram showing a case where the degree of heater electrode overlap (the rate at which the driver formed in the plane of the heater electrode overlaps with the arrangement area of ​​the temperature sensor) is 20% or less. [Figure 8]FIG. 10 is an image diagram showing a case where the degree of heater electrode overlap (the ratio of the driver formed in a plane of the heater electrode to the arrangement area of ​​the temperature sensor) is 80% or more. [Figure 9] This is an image diagram showing the case where the heater electrode overlap rate (the ratio of the heater electrode heating element and linearly formed driver overlapping the temperature sensor placement area), the tunnel overlap rate, and the cooling channel overlap rate are 100%. [Figure 10] FIG. 10 is an image diagram showing a case where the degree of heater electrode overlap (the ratio of the driver formed in a plane of the heater electrode to the arrangement area of ​​the temperature sensor) is 100%. [Figure 11] This is an image diagram showing the case where the heater electrode overlap rate (the ratio of the heater electrode heating element and linearly formed driver overlapping the temperature sensor placement area), the tunnel overlap rate, and the cooling channel overlap rate are 0%. [Figure 12] FIG. 10 is an image diagram showing a case where the degree of heater electrode overlap (the rate at which the driver formed in the plane of the heater electrode overlaps with the arrangement area of ​​the temperature sensor) is 0%. [Figure 13] FIG. 1 is an image diagram illustrating a case where, when the electrostatic chuck is viewed from the thickness direction of the ceramic member, the arrangement region of the temperature sensor has overlapping and non-overlapping portions with a heating element of a heater electrode portion, a linear driver, a lateral hole of a gas tunnel, or a cooling flow path. [Figure 14] FIG. 10 is an image diagram illustrating a case where, when the electrostatic chuck is viewed from the thickness direction of the ceramic member, a driver formed in a planar shape of the heater electrode portion overlaps with a region where a temperature sensor is disposed, in some areas and in other areas where the driver does not overlap with the region where the temperature sensor is disposed. DETAILED DESCRIPTION OF THE INVENTION

[0018] An embodiment of a holding device according to the present disclosure will be described. In this embodiment, an electrostatic chuck 1 will be described as an example of the holding device.

[0019] <Overall explanation of electrostatic chuck> The electrostatic chuck 1 of this embodiment is a device that attracts and holds a semiconductor wafer W by electrostatic attraction, and is used, for example, to fix the semiconductor wafer W in a vacuum chamber of a semiconductor manufacturing device. The semiconductor wafer W is an example of the "target object" of the present disclosure.

[0020] 1, the electrostatic chuck 1 includes a ceramic member 10, a base member 20, and a bonding layer 30 that bonds the ceramic member 10 to the base member 20. The ceramic member 10 is an example of a "first plate-shaped member" in the present disclosure, and the base member 20 is an example of a "second plate-shaped member" in the present disclosure.

[0021] In the following description, for convenience of explanation, the X, Y, and Z axes are defined as shown in Fig. 1. Here, the Z axis is an axis in the central axis direction of the electrostatic chuck 1 (the vertical direction in Fig. 1), and the X and Y axes are axes in the radial directions of the electrostatic chuck 1.

[0022] As shown in FIG. 1, the ceramic member 10 is a plate-shaped, more specifically, disk-shaped member, and is made of ceramics (ceramic substrate).

[0023] Although various ceramics are used as the ceramic, it is preferable to use ceramics whose main component is, for example, aluminum oxide (alumina, Al2O3) or aluminum nitride (AlN) from the viewpoints of strength, wear resistance, plasma resistance, etc. Here, the main component means the component with the highest content (for example, a component with a volume content of 90 vol% or more).

[0024] 1 and 2, the ceramic member 10 has a holding surface 11 (upper surface) that holds a semiconductor wafer W, and a lower surface 12 that is provided on the opposite side of the holding surface 11 in the thickness direction (hereinafter referred to as the "Z-axis direction") of the ceramic member 10. Note that the holding surface 11 is an example of a "first surface" in the present disclosure, the lower surface 12 is an example of a "second surface" in the present disclosure, and the Z-axis direction is an example of a "first direction" in the present disclosure.

[0025] The ceramic member 10 has a diameter of, for example, about 180 to 400 mm. The ceramic member 10 has a thickness of, for example, about 2 to 8 mm. The ceramic member 10 preferably has a thermal conductivity in the range of 10 to 50 W / mK (more preferably, 18 to 30 W / mK).

[0026] The ceramic member 10 also includes a chuck electrode (adsorption electrode) (not shown) inside it. When a voltage is applied to the chuck electrode from a power supply (not shown), an electrostatic attraction force is generated in the chuck electrode, and the semiconductor wafer W is attracted to and held on the holding surface 11 by this electrostatic attraction force.

[0027] The ceramic member 10 also includes a heater electrode portion 40 therein. The heater electrode portion 40 includes a heating element 41 of the heater and a driver 42 connected to the heating element 41 through a via 44. The driver 42 is an electrode formed in a linear or planar shape.

[0028] The ceramic member 10 also includes a gas tunnel 50 that opens to the holding surface 11 and the lower surface 12. The gas tunnel 50 includes a vertical hole 51 that extends from the lower surface 12 in the Z-axis direction, a horizontal hole 52 that extends in directions (X-axis direction and Y-axis direction) substantially perpendicular to the Z-axis direction and is connected to the vertical hole 51, and a vertical hole 53 that connects to the horizontal hole 52 and extends in the Z-axis direction to the holding surface 11. The X-axis direction and the Y-axis direction are examples of the "second direction" in the present disclosure.

[0029] The ceramic member 10 also has a temperature sensor 60 on its lower surface 12. A plurality of temperature sensors 60 are provided. For example, as shown in FIGS. 3 and 4, a total of four temperature sensors 60 are provided, with at least one temperature sensor 60 provided in each of a plurality of zones (zones separated by dashed lines in the figures, four zones in this case) equally divided on the lower surface 12 of the ceramic member 10. A heater electrode unit 40 is disposed in each of the four zones, and the heater electrodes 40 can be controlled independently for each zone. The temperature sensor 60 is an example of a "temperature detection unit" in the present disclosure.

[0030] The base member 20 is disposed on the opposite side of the ceramic member 10 from the holding surface 11. The base member 20 is formed, for example, in a cylindrical shape. The base member 20 is made of, for example, a metal (e.g., aluminum or an aluminum alloy), but may be made of a material other than metal.

[0031] 1, the base member 20 has an upper surface 21 and a lower surface 22 provided on the opposite side of the upper surface 21 in the Z-axis direction. The upper surface 21 of the base member 20 is thermally connected to the lower surface 12 of the ceramic member 10 via a bonding layer 30. The upper surface 21 is an example of a "third surface" in the present disclosure, and the lower surface 22 is an example of a "fourth surface" in the present disclosure.

[0032] The diameter of the base member 20 is, for example, about 180 to 400 mm. The thickness (dimension in the Z-axis direction) of the base member 20 is, for example, about 20 to 50 mm. The thermal conductivity of the base member 20 (assumed to be made of aluminum) is preferably within the range of 160 to 250 W / mK (preferably about 230 W / mK).

[0033] The base member 20 extends in directions (X-axis direction, Y-axis direction) substantially perpendicular to the Z-axis direction and includes cooling channels 70 through which cooling water flows.

[0034] The bonding layer 30 is disposed between the lower surface 12 of the ceramic member 10 and the upper surface 21 of the base member 20, and bonds the ceramic member 10 and the base member 20 in a heat-transferable manner. In this way, the lower surface 12 of the ceramic member 10 and the upper surface 21 of the base member 20 are thermally connected.

[0035] The bonding layer 30 is made of an adhesive material of a resin (such as a silicone resin, an acrylic resin, or an epoxy resin) containing a thermally conductive filler. The thickness (dimension in the Z-axis direction) of the bonding layer 30 is, for example, about 0.1 to 1.5 mm. The thermal conductivity of the bonding layer 30 is, for example, 1.0 W / mK. The thermal conductivity of the bonding layer 30 (assumed to be a silicone resin) is preferably within the range of 0.1 to 2.0 W / mK (preferably 0.5 to 1.5 W / mK).

[0036] In the electrostatic chuck 1 described above, the base member 20 is cooled by flowing a coolant through the cooling flow passage 70 provided in the base member 20, and as a result, heat is drawn from the ceramic member 10 to the base member 20 via the bonding layer 30, thereby cooling the ceramic member 10. As the ceramic member 10 is cooled, the semiconductor wafer W held on the holding surface 11 can be cooled.

[0037] <Regarding temperature sensors> In the electrostatic chuck 1 of this embodiment, the heat generation amount of the heating element 41 of the heater electrode portion 40 is controlled based on the temperature detected by the temperature sensor 60 so that the temperature distribution of the holding surface 11 of the ceramic member 10 is uniform. Specific examples of the temperature sensor 60 include a thermistor and an RTD (resistance temperature detector). The temperature sensor 60 is disposed closer to the lower surface 12 than the heater electrode portion 40 and the horizontal hole 52 of the gas tunnel 50, and is disposed in a recess formed in the lower surface 12 of the ceramic member 10, for example.

[0038] (Regarding the relationship with the heater electrode and gas tunnel) 2, the heater electrode portion 40 and the gas tunnel 50 are provided in an area above (on the holding surface 11 side of) the temperature sensor 60 in the ceramic member 10. Here, there may be a mixture of areas directly above the temperature sensor 60 where the heater electrode portion 40 and the gas tunnel 50 are provided and areas where they are not provided.

[0039] 13, when the electrostatic chuck 1 is viewed from the Z-axis direction, the heating element 41 of the heater electrode unit 40, the linear driver 42, or the lateral hole 52 of the gas tunnel 50 may overlap with the arrangement region of the temperature sensor 60 in some areas and not in others. Alternatively, as shown in FIG. 14, when the electrostatic chuck 1 is viewed from the Z-axis direction, the planar driver 42 of the heater electrode unit 40 may overlap with the arrangement region of the temperature sensor 60 in some areas and not in others.

[0040] In such a case, the temperature distribution may vary directly above the temperature sensor 60, which may reduce the detection accuracy of the temperature sensor 60. As a result, the amount of heat generated by the heating element 41 of the heater electrode portion 40 may not be appropriately controlled based on the temperature detected by the temperature sensor 60, and the temperature distribution of the holding surface 11 of the ceramic member 10 may not be uniform.

[0041] Therefore, in this embodiment, when the electrostatic chuck 1 is viewed from the Z-axis direction, a portion where the heater electrode unit 40 or the gas tunnel 50 is provided and a portion where the heater electrode unit 40 or the gas tunnel 50 is not provided are mixed at a position directly above the temperature sensor 60. That is, the heater electrode unit 40 or the lateral hole 52 of the gas tunnel 50 is not provided over the entire or substantially the entire area directly above the temperature sensor 60, or is provided over the entire or substantially the entire area.

[0042] Specifically, when viewing the electrostatic chuck 1 from the Z-axis direction, the heater electrode portion overlap degree DH, which is the ratio of the heater electrode portion 40 overlapping the arrangement area of ​​the temperature sensor 60, and the tunnel overlap degree DT, which is the ratio of the horizontal hole 52 of the gas tunnel 50 overlapping the arrangement area of ​​the temperature sensor 60, are set to 20% or less or 80% or more.

[0043] That is, the heater electrode overlap degree DH (more specifically, the ratio of the overlap of the heating element 41 of the heater electrode 40 and the linearly formed driver 42 with respect to the arrangement area of ​​the temperature sensor 60) and the tunnel overlap degree DT are set to 20% or less as shown in FIG. 5, or 80% or more as shown in FIG. 6.

[0044] In addition, the heater electrode portion overlap degree DH (more specifically, the ratio of the driver 42 formed in the planar shape of the heater electrode portion 40 that overlaps with the arrangement area of ​​the temperature sensor 60) is set to 20% or less as shown in Figure 7, or 80% or more as shown in Figure 8.

[0045] More preferably, the heater electrode overlap degree DH and the tunnel overlap degree DT are set to 10% or less or 90% or more, and even more preferably, the heater electrode overlap degree DH and the tunnel overlap degree DT are set to 100% as shown in Figures 9 and 10, or 0% as shown in Figures 11 and 12.

[0046] By adjusting the heater electrode portion overlap degree DH and the tunnel overlap degree DT in this manner, it is possible to suppress variations in the temperature distribution directly above the temperature sensor 60 due to the influence of the heater electrode portion 40 and the horizontal hole 52 of the gas tunnel 50. This improves the detection accuracy of the temperature sensor 60. Therefore, the heat generation amount of the heating element 41 of the heater electrode portion 40 can be appropriately controlled based on the temperature detected by the temperature sensor 60, making it possible to make the temperature distribution of the holding surface 11 of the ceramic member 10 uniform and ensure thermal uniformity of the holding surface 11 of the ceramic member 10.

[0047] Furthermore, although a plurality of temperature sensors 60 are provided, if the heater electrode overlap degree DH and the tunnel overlap degree DT are different for each of the plurality of temperature sensors 60, it is not possible to simply compare the detection results of the plurality of temperature sensors 60. As a result, there is a risk that the temperature variation on the holding surface 11 of the ceramic member 10 cannot be accurately grasped.

[0048] Therefore, in this embodiment, the heater electrode portion overlapping degree DH and the tunnel overlapping degree DT are set to be the same or approximately the same for all the temperature sensors 60.

[0049] Note that the ceramic member 10 may include the heater electrode portion 40 but not the gas tunnel 50, or may not include the heater electrode portion 40 but include the gas tunnel 50. Therefore, in this embodiment, when the electrostatic chuck 1 is viewed from the Z-axis direction, at least one of the heater electrode portion overlap degree DH and the tunnel overlap degree DT is set to 20% or less or 80% or more.

[0050] (Regarding the relationship with the cooling channel) 2, a cooling flow path 70 is provided in the base member 20 below the temperature sensor 60. Here, there may be a mixture of a portion where the cooling flow path 70 is provided and a portion where the cooling flow path 70 is not provided, directly below the temperature sensor 60.

[0051] For example, as shown in FIG. 13, when the electrostatic chuck 1 is viewed from the Z-axis direction, the area where the temperature sensor 60 is disposed may have both overlapping and non-overlapping portions with the cooling flow passage 70.

[0052] In such a case, the temperature distribution may vary directly below the temperature sensor 60, which may reduce the detection accuracy of the temperature sensor 60. As a result, the amount of heat generated by the heating element 41 of the heater electrode portion 40 may not be appropriately controlled based on the temperature detected by the temperature sensor 60, and the temperature distribution of the holding surface 11 of the ceramic member 10 may not be uniform.

[0053] Therefore, in this embodiment, when the electrostatic chuck 1 is viewed from the Z-axis direction, a portion where the cooling flow passage 70 is provided and a portion where the cooling flow passage 70 is not provided are mixed at a position directly below the temperature sensor 60. That is, the cooling flow passage 70 is not provided over the entire or substantially the entire area directly below the temperature sensor 60, or is provided over the entire or substantially the entire area.

[0054] Specifically, when the electrostatic chuck 1 is viewed from the Z-axis direction, the cooling flow path overlap degree DC, which is the ratio of the overlap of the cooling flow path 70 with the arrangement area of ​​the temperature sensor 60, is set to 20% or less as shown in Fig. 5, or 80% or more as shown in Fig. 6. More preferably, the cooling flow path overlap degree DC is set to 100% or 0%.

[0055] <Effects of this embodiment> As described above, in the electrostatic chuck 1 of this embodiment, when the electrostatic chuck 1 is viewed from the Z-axis direction, at least one of the heater electrode portion overlap degree DH and the tunnel overlap degree DT is 20% or less or 80% or more.

[0056] In this way, when the electrostatic chuck 1 is viewed from the Z-axis direction, at least one of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50 is configured to almost not overlap with the temperature sensor 60 or to overlap with the entirety of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50. This makes it possible to suppress variations in the temperature distribution directly above the temperature sensor 60 due to the influence of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50. This improves the detection accuracy of the temperature sensor 60. Therefore, it is possible to ensure uniform temperature distribution on the holding surface 11 of the ceramic member 10 based on the detection result of the temperature sensor 60.

[0057] Furthermore, when the electrostatic chuck 1 is viewed from the Z-axis direction, the cooling flow path overlap degree DC is 20% or less, or 80% or more.

[0058] In this way, when the electrostatic chuck 1 is viewed from the Z-axis direction, the cooling flow passage 70 is configured to overlap the temperature sensor 60 almost entirely or not almost entirely. This makes it possible to suppress variations in the temperature distribution directly below the temperature sensor 60 due to the influence of the cooling flow passage 70. Therefore, even if the cooling flow passage 70 is provided in the base member 20, the detection accuracy of the temperature sensor 60 is maintained.

[0059] Moreover, at least one of the heater electrode portion overlapping degree DH and the tunnel overlapping degree DT is 100%.

[0060] In this way, when the electrostatic chuck 1 is viewed from the Z-axis direction, at least one of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50 is configured to overlap the entire temperature sensor 60. Therefore, it is possible to more reliably suppress the variation in the temperature distribution directly above the temperature sensor 60 due to the influence of the heater electrode portion 40 or the lateral hole 52 of the gas tunnel 50.

[0061] Moreover, at least one of the heater electrode portion overlap degree DH and the tunnel overlap degree DT is 0%.

[0062] In this way, when the electrostatic chuck 1 is viewed from the Z-axis direction, at least one of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50 does not overlap with the temperature sensor 60. Therefore, it is possible to more reliably suppress the variation in the temperature distribution directly below the temperature sensor 60 due to the influence of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50.

[0063] Furthermore, a plurality of temperature sensors 60 are provided, and all of the temperature sensors 60 have the same or approximately the same heater electrode portion overlapping degree DH and / or tunnel overlapping degree DT.

[0064] In this way, when the electrostatic chuck 1 is viewed from the Z-axis direction, at least one of the heater electrode portion 40 and the lateral hole 52 of the gas tunnel 50 is configured to almost completely or almost completely overlap with the temperature sensor 60, for all of the temperature sensors 60. This makes it possible to suppress variations in the temperature distribution near the temperature sensor 60 for all of the temperature sensors 60. Therefore, the detection accuracy of all of the temperature sensors 60 is maintained almost constant. Therefore, the detection results of the multiple temperature sensors 60 can be simply compared, and therefore the temperature variations on the holding surface 11 of the ceramic member 10 can be accurately determined.

[0065] It should be noted that the above-described embodiments are merely examples and do not limit the present disclosure in any way. It goes without saying that various improvements and modifications are possible within the scope of the gist of the present disclosure.

[0066] For example, when the electrostatic chuck 1 is viewed from the Z-axis direction, it is not essential that the cooling flow passage 70 does not overlap or overlaps the temperature sensor 60 almost entirely. That is, when the electrostatic chuck 1 is viewed from the Z-axis direction, while at least one of the heater electrode portion overlap degree DH and the tunnel overlap degree DT is 20% or less or 80% or more, the cooling flow passage overlap degree DC does not have to be 20% or less or 80% or more (that is, it may be greater than 20% and less than 80%). [Explanation of symbols]

[0067] 1. Electrostatic chuck 10 Ceramic materials 11 Holding surface 12 Bottom side 20 Base member 21 Top side 22 Bottom side 30 Bonding layer 40 Heater electrode 41 Heating element 42 Drivers 44 Beer 50 Gas Tunnel 51 Vertical Hole 52 Horizontal cave 53 Vertical Hole 60 Temperature Sensor 70 Cooling Channel W Semiconductor wafer DH Heater electrode overlap DT Tunnel overlap degree DC cooling channel overlap

Claims

1. a first plate-like member having a first surface and a second surface provided on the opposite side of the first surface in a first direction; A holding device that holds an object on the first surface of the first plate-shaped member, The first plate-shaped member includes: a heater electrode portion and at least one of a gas tunnel opening to the first surface and a gas tunnel opening to the second surface; A temperature detection unit; Equipped with When the first plate-shaped member includes the gas tunnel, The gas tunnel a vertical hole extending from the second surface in the first direction; a horizontal hole extending in a second direction that is substantially perpendicular to the first direction and connected to the vertical hole; Equipped with when the holding device is viewed from the first direction, at least one of a heater electrode portion overlapping degree, which is the ratio of the heater electrode portion overlapping with an arrangement area of ​​the temperature detection portion, and a tunnel overlapping degree, which is the ratio of the lateral hole of the gas tunnel overlapping with an arrangement area of ​​the temperature detection portion, is 20% or less or 80% or more; the temperature detection unit is disposed closer to the second surface in the first direction than the heater electrode unit and the lateral hole of the gas tunnel; A holding device characterized by:

2. The holding device of claim 1, a second plate-like member including a third surface and a fourth surface provided on the opposite side of the third surface in the first direction; the second surface of the first plate-shaped member and the third surface of the second plate-shaped member are thermally connected to each other, the second plate-shaped member extends in the second direction and includes a cooling flow path through which cooling water flows; a cooling flow path overlapping degree, which is a ratio of an overlap of the cooling flow path with respect to an arrangement area of ​​the temperature detection unit when the holding device is viewed from the first direction, is 20% or less or 80% or more; A holding device characterized by:

3. The holding device according to claim 1 or 2, At least one of the heater electrode portion overlapping degree and the tunnel overlapping degree is 100%; A holding device characterized by:

4. The holding device according to claim 1 or 2, At least one of the heater electrode portion overlapping degree and the tunnel overlapping degree is 0%; A holding device characterized by:

5. The holding device according to claim 1 or 2, The temperature detection unit is provided in plurality, At least one of the heater electrode portion overlapping degree and the tunnel overlapping degree is the same or substantially the same for all the temperature detection portions; A holding device characterized by:

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