Negative resist composition for gradation exposure

JP7819801B2Active Publication Date: 2026-02-25DAI NIPPON PRINTING CO LTD
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Patent Information

Application Number
JP2025062228
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-04-04
Publication Date
2026-02-25
Estimated Expiration
2041-03-16

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Abstract

To provide a negative resist composition for gradation exposure which allows alkaline development in pattern formation by irradiation with an electron beam, an ion beam, or EUV, is suitable for gradation exposure because the height of the convex portions can be easily controlled according to the amount of exposure, and is capable of forming a three-dimensional pattern with excellent resolution.SOLUTION: A chemical amplification type negative resist composition for gradation exposure comprises a phenolic compound (A) having a molecular weight of 400 to 2500, which has two or more phenolic hydroxyl groups per molecule and has two or more substituents of one or more kinds per molecule selected from the group consisting of hydroxymethyl groups and alkoxymethyl groups at the ortho-positions of the phenolic hydroxyl groups, and an organic basic compound (B), wherein the content of the phenolic compound (A) in the total solid content of the negative resist composition is 70 wt.% or more. The composition is substantially free of an acid generator.SELECTED DRAWING: None
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Citation Information

Patent Citations

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  • Negative type photoresist pattern forming method

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