Semiconductor Devices

Abstract

This semiconductor device comprises semiconductor elements (5); an insulating substrate (2) on which the semiconductor elements (5) are mounted, a metal base plate (1) on which the insulating substrate (2) is mounted, and a resin case (3) that is provided on the metal base plate (1) so as to surround the insulating substrate (2). The metal base plate (1) has a plurality of first fastening holes (4a) and the resin case (3) has a plurality of second fastening holes (4b) that are disposed so as to overlap the plurality of first fastening holes (4a). A protrusion (1a) for limiting the rotation of the resin case (3) is provided in a region between adjacent first fastening holes (4a) in the metal base plate (1).

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device, and more particularly to a semiconductor device having a package structure including a metal base plate and a resin case. [Background technology]

[0002] For example, Patent Document 1 discloses a semiconductor device having a package structure including a metal base plate for heat dissipation and a resin case. In Patent Document 1, the metal base plate and the resin case are joined by pressing the resin case against the metal base plate to which an adhesive has been applied, and then heating the adhesive to harden the adhesive. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 8-31967 Summary of the Invention [Problem to be solved by the invention]

[0004] In the process of joining a metal base plate and a resin case, one method of pressing the resin case against the metal base plate is to fasten the metal base plate and the resin case together with a jig on which the resin case is placed with screws. When this method is used, the metal base plate and the resin case are heated in a screwed state to harden the adhesive, and then the screws fastening the metal base plate and the resin case together are removed.

[0005] However, with this method, the torque applied when tightening the first screw can cause the resin case to shift relative to the metal base plate around the tightening position of the first screw. If the adhesive hardens while the resin case and metal base plate are misaligned, the fastening holes in the resin case and the metal base plate will be misaligned in the finished semiconductor device. If this misalignment occurs, the screw will interfere with the inner wall of the fastening hole in the metal base plate when fixing the semiconductor device to the cooling fin, resulting in a malfunction of the cooling fin installation.

[0006] The present disclosure has been made to solve the above-mentioned problems, and aims to provide a semiconductor device that can prevent misalignment between the fastening holes in the resin case and the fastening holes in the metal base plate. [Means for solving the problem]

[0007] A semiconductor device according to the present disclosure includes a semiconductor element, an insulating substrate on which the semiconductor element is mounted, a metal base plate on which the insulating substrate is mounted, a resin case provided on the metal base plate so as to surround the insulating substrate, a plurality of first fastening holes formed in the metal base plate, a plurality of second fastening holes formed in the resin case and arranged so as to overlap with the plurality of first fastening holes, and protrusions provided in areas between adjacent first fastening holes on the metal base plate and which limit rotation of the resin case. The resin case has grooves into which the protrusions fit, the metal base plate has linear protrusions extending between adjacent first fastening holes, and the resin case has linear grooves into which the linear protrusions fit. [Effects of the Invention]

[0008] According to the semiconductor device of the present disclosure, a protrusion is provided on the metal base plate to limit the rotation of the resin case, thereby preventing misalignment between the first fastening hole in the resin case and the second fastening hole in the metal base plate.

[0009] The objects, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. [Brief explanation of the drawings]

[0010] [Figure 1]1 is a plan view showing a configuration of a semiconductor device according to a first embodiment. [Figure 2] 1 is a plan view of the semiconductor device according to the first embodiment, with the resin case omitted. [Figure 3] FIG. 2 is a cross-sectional view taken along the line A1-A2 shown in FIG. [Figure 4] FIG. 10 is a plan view showing the configuration of a semiconductor device according to a second embodiment. [Figure 5] FIG. 10 is a plan view of a semiconductor device according to a second embodiment, with the resin case omitted. [Figure 6] FIG. 10 is a plan view showing the configuration of a semiconductor device according to a third embodiment. [Figure 7] FIG. 7 is an enlarged view of a region R shown in FIG. [Figure 8] FIG. 10 is a plan view showing the configuration of a semiconductor device according to a fourth embodiment. [Figure 9] FIG. 10 is a plan view of a semiconductor device according to a fourth embodiment, with the resin case omitted. [Figure 10] FIG. 11 is a plan view showing the configuration of a semiconductor device according to a fifth embodiment. [Figure 11] FIG. 11 is a plan view of a semiconductor device according to a fifth embodiment, with the resin case omitted. [Figure 12] FIG. 11 is a cross-sectional view taken along the line A1-A2 shown in FIG. [Figure 13] FIG. 13 is a plan view showing the configuration of a semiconductor device according to a sixth embodiment. [Figure 14] FIG. 13 is a plan view of a semiconductor device according to a sixth embodiment, with the resin case omitted. [Figure 15] FIG. 14 is a cross-sectional view taken along the line A1-A2 shown in FIG. [Figure 16] FIG. 13 is a plan view showing the configuration of a semiconductor device according to a seventh embodiment. [Figure 17] FIG. 13 is a plan view of a semiconductor device according to a seventh embodiment, with the resin case omitted. [Figure 18] FIG. 17 is a cross-sectional view taken along the line A1-A2 shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0011] <First Embodiment> 1, 2, and 3 are diagrams showing the configuration of a semiconductor device according to embodiment 1. Fig. 1 is a plan view of the semiconductor device, Fig. 2 is a plan view of the semiconductor device from Fig. 1 with a resin case of the semiconductor device omitted, and Fig. 3 is a cross-sectional view taken along line A1-A2 shown in Fig. 1.

[0012] As shown in FIG. 1, the semiconductor device of the first embodiment comprises a semiconductor element 5, an insulating substrate 2 on which the semiconductor element 5 is mounted, a metal base plate 1 on which the insulating substrate 2 is mounted, and a resin case 3 arranged on the metal base plate 1 to surround the insulating substrate 2.

[0013] The metal base plate 1 is made of a material with excellent thermal conductivity, such as aluminum alloy or copper. Although not shown, the insulating substrate 2 is composed of an insulating layer and a circuit pattern bonded to both sides of the insulating layer. The insulating layer is made of a ceramic with excellent thermal conductivity, such as aluminum nitride or silicon nitride, or a resin. The circuit pattern is made of a conductive material with excellent thermal conductivity, such as aluminum alloy or copper. The insulating layer and the circuit pattern are bonded together using a bonding material, such as solder or soft solder. The semiconductor element 5 is bonded to the circuit pattern on the insulating substrate 2 using a bonding material. Here, multiple semiconductor elements 5 are mounted on metal lead electrodes 6, and the multiple semiconductor elements 5 are connected via the metal lead electrodes 6 to form a circuit. Instead of the metal lead electrodes 6, for example, aluminum wire or the like may be used.

[0014] There are no restrictions on the type of semiconductor element 5. In power control semiconductor devices, silicon (Si) IGBTs, diodes, and reverse conducting IGBTs are often used as the semiconductor elements 5. MOSFETs and Schottky diodes formed from semiconductor materials with larger band gaps than Si, such as silicon carbide (SiC) and gallium nitride (GaN) semiconductors, can also be used as the semiconductor elements 5 of power control semiconductor devices. There are also no restrictions on the number of semiconductor elements 5 mounted on the insulating substrate 2, and the required number of semiconductor elements 5 can be mounted depending on the application.

[0015] The resin case 3 is composed of an external electrode 3a and a resin portion 3b. The external electrode 3a may be insert-molded into the resin portion 3b, or may be inserted and placed after the resin portion 3b is formed. The material of the resin portion 3b is generally a highly heat-resistant resin such as PPS (polyphenylene sulfide) or PBT (polybutylene terephthalate), but is not limited to these, and any resin with the desired properties may be selected.

[0016] Although not shown in the drawings, the resin case 3 is filled with a sealing resin or the like having high insulating properties, which seals the semiconductor element 5, insulating substrate 2, metal lead electrodes 6, etc. Although silicone gel or epoxy resin is generally used as the sealing resin, it is not limited thereto, and any resin having desired physical properties such as elastic modulus, heat resistance, adhesiveness, and linear expansion coefficient may be selected.

[0017] The semiconductor device according to the first embodiment has fastening holes 4 at its four corners. The fastening holes 4 penetrate the metal base plate 1 and the resin case 3. That is, the fastening holes 4 consist of fastening hole 4a, which is a first fastening hole formed in the metal base plate 1, and fastening hole 4b, which is a second fastening hole formed in the resin case 3. Fastening hole 4a in the metal base plate 1 and fastening hole 4b in the resin case 3 are arranged so as to overlap each other.

[0018] In the first embodiment, in order to prevent misalignment between the fastening holes 4a in the metal base plate 1 and the fastening holes 4b in the resin case 3, a protrusion 1a is provided on the upper surface of the metal base plate 1 to limit the rotation of the resin case 3. As shown in FIG. 2, the protrusion 1a is provided in the area between adjacent fastening holes 4a in the metal base plate 1. The protrusion 1a is provided in one or more locations on the metal base plate 1, and its position, shape, and length (height) are not important as long as it can limit the rotation of the resin case 3. The position of the protrusion 1a may be anywhere in the area between adjacent fastening holes 4a in the metal base plate 1. Here, a square prism is shown as an example of the shape of the protrusion 1a, but it may also be, for example, a cylinder, a tapered square pyramid, or a cone.

[0019] Furthermore, grooves 3c are provided on the bottom surface of the resin case 3 (i.e., the surface that abuts against the metal base plate 1) at positions corresponding to the protrusions 1a of the metal base plate 1. The resin case 3 is positioned so that the protrusions 1a fit into the grooves 3c, as shown in FIG. 3, and is then mounted on the metal base plate 1.

[0020] Here, an example of the assembly process of the semiconductor device according to the embodiment 1 will be described. The assembly process includes the following first to fifth steps.

[0021] [1st step] In the first step, the metal base plate 1, insulating substrate 2, and semiconductor element 5 are bonded together using a bonding material such as sheet solder, solder paste, or other soft solder. Solder is typically used as the bonding material. The bonding process is carried out at a temperature above the melting point of the bonding material used. The bonding material may be a pre-formed material such as sheet solder, or may be a solder paste that is applied by screen printing or dispensing.

[0022] [Second process] In the second step, a silicone or epoxy adhesive is applied to the outer periphery of the metal base plate 1 to be joined to the resin case 3, and the metal base plate 1 is placed on a jig. Then, the resin case 3 is placed on top of the metal base plate 1, and they are fastened together with the jig with screws, thereby press-fitting the metal base plate 1 and the resin case 3 together. In this state, the metal base plate 1 and the resin case 3 are heated to cure the adhesive.

[0023] [3rd step] In the third step, a circuit is formed by soldering metal lead electrodes 6 to the semiconductor element 5. The screws attached in the second step are removed after the third step.

[0024] [4th step] In the fourth step, the control electrode (not shown) of the semiconductor element 5 and an external signal terminal (not shown) for inputting a control signal are connected by ultrasonic bonding of a wire, etc. Aluminum, which has high thermal conductivity and electrical conductivity, is often used as the material for this wire.

[0025] [5th ​​step] In the fifth step, the resin case 3 is filled with a sealing resin to seal the semiconductor element 5, insulating substrate 2, metal lead electrodes 6, etc. Silicone gel or epoxy resin is often used as the sealing resin, but there is no limitation thereto; any resin having the desired physical properties such as elastic modulus, heat resistance, adhesiveness, and linear expansion coefficient can be selected. The semi-finished product is then placed in a curing oven or the like to harden the sealing resin.

[0026] The above steps complete the structure of the semiconductor device, which is then tested for necessary electrical properties before being manufactured as a finished product.

[0027] In the semiconductor device according to the first embodiment, the metal base plate 1 has the protrusion 1a, and the resin case 3 is provided with the groove 3c into which the protrusion 1a fits. Therefore, when the metal base plate 1 and the resin case 3 are fastened together with screws in the second step, rotation of the resin case 3 due to the torque of the screws is restricted. Therefore, misalignment between the fastening holes 4a in the metal base plate 1 and the fastening holes 4b in the resin case 3 is prevented.

[0028] <Embodiment 2> Figures 4 and 5 are diagrams showing the configuration of a semiconductor device according to embodiment 2. Figure 4 is a plan view of the semiconductor device, and Figure 5 is a plan view of the semiconductor device from which the resin case is omitted.

[0029] In the semiconductor device of the second embodiment, the projections 1a provided on the metal base plate 1 are linear in shape (i.e., elongated rectangular) in plan view. That is, the metal base plate 1 has linear projections 1a extending between adjacent fastening holes 4a. The resin case 3 also has linear grooves 3c at positions corresponding to the projections 1a on the metal base plate 1, into which the linear projections 1a fit. The projections 1a are provided in one or more locations on the metal base plate 1.

[0030] According to the semiconductor device of the second embodiment, similarly to the first embodiment, the protrusion 1a of the metal base plate 1 restricts the rotation of the resin case 3 due to the torque of the screws fastening in the second step. In particular, by making the shape of the protrusion 1a linear, the amount of deviation in the rotational direction of the metal base plate 1 is suppressed more than in the first embodiment, and misalignment between the fastening holes 4a of the metal base plate 1 and the fastening holes 4b of the resin case 3 is even less likely to occur.

[0031] <Third Embodiment> 6 and 7 are diagrams showing the configuration of a semiconductor device according to embodiment 3. Fig. 6 is a plan view of the semiconductor device, and Fig. 7 is an enlarged view of a region R shown in Fig. 6.

[0032] The basic configuration of the semiconductor device according to the third embodiment is the same as that of the first or second embodiment. Fig. 6 shows a state in which the position of the resin case 3 is shifted relative to the metal base plate 1, but the groove 3c of the resin case 3 is caught on the protrusion 1a of the metal base plate 1, preventing the shift of the resin case 3.

[0033] 7 shows the positional relationship between the protrusion 1a of the metal base plate 1 and the groove 3c of the resin case 3 in the state shown in FIG. 6, as well as the positional relationship between the fastening hole 4a of the metal base plate 1 and the fastening hole 4b of the resin case 3. As shown in FIG. 7, the maximum width Wmax of the gap that can be formed between the protrusion 1a fitted into the groove 3c and the inner wall of the groove 3c is smaller than the difference between the diameter Da of the fastening hole 4a of the metal base plate 1 and the diameter Db of the fastening hole 4b of the resin case 3. In other words, the relationship Wmax<|Da-Db| holds.

[0034] In the semiconductor device according to the third embodiment, the relationship Wmax<|Da-Db| holds, and therefore even if the resin case 3 rotates due to the screw tightening torque in the second step, the inner wall of the groove 3c of the resin case 3 catches on the protrusion 1a of the metal base plate 1 before the fastening hole 4b of the resin case 3 protrudes from the fastening hole 4a of the metal base plate 1. Therefore, there is substantially no misalignment between the fastening hole 4a of the metal base plate 1 and the fastening hole 4b of the resin case 3.

[0035] <Fourth Embodiment> 8 and 9 are diagrams showing the configuration of a semiconductor device according to embodiment 4. Fig. 8 is a plan view of the semiconductor device, and Fig. 9 is a plan view of the semiconductor device from Fig. 8 with the resin case of the semiconductor device omitted.

[0036] In the semiconductor device of the fourth embodiment, a plurality of (here, two) cylindrical protrusions 1a are provided on the metal base plate 1. The resin case 3 also has a plurality of circular grooves 3c into which the cylindrical protrusions 1a fit. The cylindrical protrusions 1a may be located anywhere in the region between adjacent fastening holes 4a on the metal base plate 1.

[0037] Rotation of the resin case 3 due to the screw tightening torque in the second step occurs around the first screw tightening position. In the above-described third embodiment, it is necessary to design the maximum width (Wmax) of the gap between the protrusion 1a and the inner wall of the groove 3c so that misalignment between the fastening hole 4a of the metal base plate 1 and the fastening hole 4b of the resin case 3 does not occur even at a position far from the first screw tightening position. In contrast, in the fourth embodiment, by providing two or more cylindrical protrusions 1a, the amount of misalignment of the metal base plate 1 in the rotational direction is suppressed, making it easier to design the maximum width of the gap between the protrusion 1a and the inner wall of the groove 3c.

[0038] <Fifth Embodiment> 10, 11, and 12 are diagrams showing the configuration of a semiconductor device according to embodiment 5. Fig. 10 is a plan view of the semiconductor device, Fig. 11 is a plan view of the semiconductor device from which a resin case is omitted, and Fig. 12 is a cross-sectional view taken along line A1-A2 shown in Fig. 10.

[0039] In the semiconductor device of the fifth embodiment, one or more pairs of protrusions 1a are provided on each of two non-parallel sides of the metal base plate 1, and the protrusions 1a are arranged to sandwich a part of the resin case 3. There are no restrictions on the shape or height of the two protrusions 1a that make up a pair. Note that, because the pair of protrusions 1a sandwich a part of the resin case 3 and thereby limit the rotation of the resin case 3, there is no need to form a groove 3c in the resin case 3.

[0040] According to the semiconductor device of the fifth embodiment, similarly to the first embodiment, the projections 1a of the metal base plate 1 prevent the resin case 3 from rotating due to the torque of the screws fastened in the second step. In particular, since the pair of projections 1a is configured to sandwich a part of the metal base plate 1, there is no need to form a groove 3c in the resin case 3.

[0041] <Sixth Embodiment> 13, 14, and 15 are diagrams showing the configuration of a semiconductor device according to embodiment 6. Fig. 13 is a plan view of the semiconductor device, Fig. 14 is a plan view of the semiconductor device from Fig. 13 with the resin case of the semiconductor device omitted, and Fig. 15 is a cross-sectional view taken along line A1-A2 shown in Fig. 13.

[0042] In the semiconductor device according to the sixth embodiment, one or more protrusions 1a are provided on each side of the metal base plate 1 and are arranged inside the resin case 3. Therefore, the metal base plate 1 is provided with four or more protrusions 1a on the inside of the resin case 3. When the resin case 3 is arranged on the metal base plate 1, the multiple protrusions 1a are fitted into the inside of the resin case 3.

[0043] According to the semiconductor device of the sixth embodiment, similarly to the first embodiment, the protrusions 1a of the metal base plate 1 restrict rotation of the resin case 3 due to the torque of the screws tightened in the second step. In particular, by providing the protrusions 1a on each side of the metal base plate 1, horizontal displacement of the metal base plate 1 is also suppressed, making it even less likely that misalignment will occur between the fastening holes 4a of the metal base plate 1 and the fastening holes 4b of the resin case 3. Furthermore, since the inner wall of the resin case 3 is configured to be engaged with the protrusions 1a, there is no need to form grooves 3c in the resin case 3. This is effective when it is difficult to arrange some of the protrusions 1a on the outside of the resin case 3, as in the fifth embodiment.

[0044] <Seventh Embodiment> 16, 17, and 18 are diagrams showing the configuration of a semiconductor device according to embodiment 7. Fig. 16 is a plan view of the semiconductor device, Fig. 17 is a plan view of the semiconductor device from Fig. 16 with the resin case of the semiconductor device omitted, and Fig. 18 is a cross-sectional view taken along line A1-A2 shown in Fig. 16.

[0045] In the semiconductor device according to the seventh embodiment, one or more protrusions 1a are provided on each side of the metal base plate 1 and are arranged on the outside of the resin case 3. Therefore, the metal base plate 1 is provided with four or more protrusions 1a on the outside of the resin case 3. When the resin case 3 is placed on the metal base plate 1, the protrusions 1a on each side are positioned on the outside of the resin case 3.

[0046] According to the semiconductor device of the seventh embodiment, as in the first embodiment, the protrusions 1a of the metal base plate 1 limit rotation of the resin case 3 due to the torque of the screws tightened in the second step. Also, as in the sixth embodiment, the provision of protrusions 1a on each side of the metal base plate 1 also suppresses horizontal displacement of the metal base plate 1, making it even less likely that misalignment will occur between the fastening holes 4a of the metal base plate 1 and the fastening holes 4b of the resin case 3. Furthermore, since the outer wall of the resin case 3 is configured to be engaged with the protrusions 1a, there is no need to form grooves 3c in the resin case 3. This is effective when it is difficult to arrange all of the protrusions 1a inside the resin case 3, as in the sixth embodiment.

[0047] <Embodiment 8> The basic configuration of the semiconductor device according to the eighth embodiment is the same as that of the fifth, sixth, or seventh embodiment, and furthermore, is designed so that the maximum width of the gap that can be formed between the resin case 3 mounted on the metal base plate 1 and the protrusion 1a of the metal base plate 1 is smaller than the difference in diameter between the fastening hole 4b and the fastening hole 4a in the resin case 3. In other words, if the maximum width of the gap between the resin case 3 and the protrusion 1a of the metal base plate 1 is Wmax, the diameter of the fastening hole 4b in the resin case 3 is Da, and the diameter of the fastening hole 4a is Db, then the relationship Wmax<|Da-Db| holds.

[0048] According to the semiconductor device of the eighth embodiment, the relationship Wmax<|Da-Db| holds, and therefore even if the resin case 3 rotates due to the screw tightening torque in the second step, the resin case 3 catches on the protrusion 1a of the metal base plate 1 before the fastening hole 4b of the resin case 3 protrudes from the fastening hole 4a of the metal base plate 1. Therefore, there is substantially no misalignment between the fastening hole 4a of the metal base plate 1 and the fastening hole 4b of the resin case 3.

[0049] It is possible to freely combine the embodiments, and to modify or omit the embodiments as appropriate.

[0050] The above description is illustrative in all respects, and it is understood that countless variations not illustrated can be envisioned. [Explanation of symbols]

[0051] 1 metal base plate, 1a protrusion, 2 insulating substrate, 3 resin case, 3a external electrode, 3b resin part, 3c groove, 4 fastening hole, 4a fastening hole in metal base plate, 4b fastening hole in resin case, 5 semiconductor element, 6 metal lead electrode.

Claims

1. A semiconductor element; an insulating substrate on which the semiconductor element is mounted; a metal base plate on which the insulating substrate is mounted; a resin case provided on the metal base plate so as to surround the insulating substrate; a plurality of first fastening holes formed in the metal base plate; a plurality of second fastening holes formed in the resin case and arranged to overlap with the plurality of first fastening holes; a protrusion provided in a region between adjacent first fastening holes of the metal base plate, the protrusion limiting rotation of the resin case; Equipped with the resin case has a groove into which the protrusion fits, the metal base plate includes the linear protrusions extending between adjacent first fastening holes; the resin case includes the linear groove into which the linear protrusion fits, Semiconductor device.

2. A semiconductor element; an insulating substrate on which the semiconductor element is mounted; a metal base plate on which the insulating substrate is mounted; a resin case provided on the metal base plate so as to surround the insulating substrate; a plurality of first fastening holes formed in the metal base plate; a plurality of second fastening holes formed in the resin case and arranged to overlap with the plurality of first fastening holes; a protrusion provided in a region between adjacent first fastening holes of the metal base plate, the protrusion limiting rotation of the resin case; Equipped with the resin case has a groove into which the protrusion fits, a maximum width of a gap that can be formed between the protrusion fitted in the groove and the inner wall of the groove is smaller than a difference between a diameter of the first fastening hole and a diameter of the second fastening hole; Semiconductor device.

3. A semiconductor element; an insulating substrate on which the semiconductor element is mounted; a metal base plate on which the insulating substrate is mounted; a resin case provided on the metal base plate so as to surround the insulating substrate; a plurality of first fastening holes formed in the metal base plate; a plurality of second fastening holes formed in the resin case and arranged to overlap with the plurality of first fastening holes; a protrusion provided in a region between adjacent first fastening holes of the metal base plate, the protrusion limiting rotation of the resin case; Equipped with the metal base plate includes a pair of the protrusions arranged on each of two sides of the metal base plate that are not parallel to each other, and that are arranged so as to sandwich a part of the resin case therebetween; Semiconductor device.

4. A semiconductor element; an insulating substrate on which the semiconductor element is mounted; a metal base plate on which the insulating substrate is mounted; a resin case provided on the metal base plate so as to surround the insulating substrate; a plurality of first fastening holes formed in the metal base plate; a plurality of second fastening holes formed in the resin case and arranged to overlap with the plurality of first fastening holes; a protrusion provided in a region between adjacent first fastening holes of the metal base plate, the protrusion limiting rotation of the resin case; Equipped with the metal base plate includes the protrusions disposed on the inside of the resin case on each side of the metal base plate; Semiconductor device.

5. A semiconductor element; an insulating substrate on which the semiconductor element is mounted; a metal base plate on which the insulating substrate is mounted; a resin case provided on the metal base plate so as to surround the insulating substrate; a plurality of first fastening holes formed in the metal base plate; a plurality of second fastening holes formed in the resin case and arranged to overlap with the plurality of first fastening holes; a protrusion provided in a region between adjacent first fastening holes of the metal base plate, the protrusion limiting rotation of the resin case; Equipped with the metal base plate includes the protrusions arranged on the outside of the resin case on each side of the metal base plate; Semiconductor device.

6. a maximum width of a gap that can be formed between the resin case mounted on the metal base plate and the protrusion is smaller than a difference in diameter between the second fastening hole and the first fastening hole; The semiconductor device according to claim 3 .

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