Semiconductor device manufacturing method and semiconductor device

Abstract

This method for manufacturing a semiconductor apparatus comprises a first preparation step, a second preparation step, a mounting step, a third preparation step, a disposing step, and a curing step. The first preparation step prepares a first lead frame including an island portion. The second preparation step prepares a semiconductor element having an element main surface, an element back surface, a first electrode, and a second electrode. The mounting step mounts the semiconductor element in the island portion with a first electrically conductive paste interposed between the element back surface and the island portion. The third preparation step prepares a second lead frame including a first portion, a second portion, a frame portion, a first linking portion, and a second linking portion. The disposing step disposes the second lead frame with a second electrically conductive paste interposed between the first portion and the first electrode, and with a third electrically conductive paste interposed between the second portion and the second electrode. The curing step cures the first electrically conductive paste, the second electrically conductive paste, and the third electrically conductive paste.

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a semiconductor device. [Background technology]

[0002] Semiconductor devices using III-V nitride semiconductors (hereinafter sometimes referred to as "nitride semiconductors") such as gallium nitride (GaN) have been developed. Patent Document 1 discloses a semiconductor device using a nitride semiconductor. The semiconductor device disclosed in this document includes a device body made of a semiconductor, and a nitride semiconductor layer and electrodes stacked on the main surface side of the device body. The electrodes include a source electrode, a drain electrode, and a gate electrode arranged on the nitride semiconductor layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-38885 Summary of the Invention [Problem to be solved by the invention]

[0004] In a semiconductor device using the above-described semiconductor element, conductive members are bonded to the source electrode and the drain electrode arranged on the main surface side of the element body. It is desirable that these conductive members be positioned relative to each other as accurately as possible.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device and a method for manufacturing the same that enable more accurate placement of conductive members. [Means for solving the problem]

[0006] A method for manufacturing a semiconductor device provided by a first aspect of the present disclosure includes a first preparation step of preparing a first lead frame including an island portion; a second preparation step of preparing a semiconductor element having a main surface facing one side in a thickness direction and a back surface facing the other side, and at least one first electrode and at least one second electrode disposed on the main surface; a mounting step of mounting the semiconductor element on the island portion so that a first conductive paste is interposed between the back surface of the element and the island portion; and a mounting step of mounting the semiconductor element on the island portion so that a first conductive paste is interposed between the first portion, the second portion, the frame portion, and the island portion. The method includes a third preparation step of preparing a second lead frame including a first connecting portion that connects a first portion and the frame portion and a second connecting portion that connects the second portion and the frame portion; an arrangement step of arranging the second lead frame so that a second conductive paste is interposed between the first portion and the at least one first electrode and a third conductive paste is interposed between the second portion and the at least one second electrode; and a hardening step of hardening the first conductive paste, the second conductive paste, and the third conductive paste.

[0007] A second aspect of the present disclosure provides a semiconductor device comprising a plurality of leads, a semiconductor element, and a sealing resin covering the semiconductor element and portions of the plurality of leads, the plurality of leads including an island lead, a first lead, and a second lead spaced apart from one another, the semiconductor element having a main surface facing one side in a thickness direction and a back surface facing the other side, and at least one first electrode and at least one second electrode arranged on the main surface, the back surface of the element and the island lead being joined by a first conductive joint portion, The first lead has a first main portion, at least one first branch portion, and a first extension portion, the second lead has a second main portion, at least one second branch portion, and a second extension portion, the at least one first branch portion and the at least one first electrode are each joined by a second conductive junction, the at least one second branch portion and the at least one second electrode are each joined by a third conductive junction, the first extension portion has a first end face exposed from the sealing resin, and the second extension portion has a second end face exposed from the sealing resin. [Effects of the Invention]

[0008] According to the present disclosure, the conductive member can be positioned more accurately.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 3] 1 is a perspective view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 4] 1 is a perspective view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 5]1 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 6] FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 7] FIG. 2 is a rear view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 8] FIG. 1 is a left side view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 9] FIG. 2 is a right side view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 10] 1 is a plan view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 11 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 11 is a cross-sectional view taken along line XV-XV in FIG. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 11 is a cross-sectional view taken along line XVII-XVII in FIG. [Figure 18] FIG. 11 is a cross-sectional view taken along line XVIII-XVIII in FIG. [Figure 19] FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. [Figure 20] FIG. 2 is a perspective view showing a first lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 21] FIG. 2 is a plan view showing a first lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 22] 1 is a front view showing a first lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 23] FIG. 2 is a rear view showing a first lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 24] FIG. 2 is a side view showing a first lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 25] FIG. 2 is a perspective view showing a second lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 26] FIG. 2 is a plan view showing a second lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 27] FIG. 3 is a rear view showing a second lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 28] FIG. 2 is a front view showing a second lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 29] FIG. 2 is a side view showing a second lead of the semiconductor device according to the first embodiment of the present disclosure. [Figure 30] 1 is a perspective view showing an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 31] 1 is a perspective view showing an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 32] 1 is a perspective view showing an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 33] 3A to 3C are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 34] 3A to 3C are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 35] 1 is a perspective view showing an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 36] FIG. 2 is a cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 37] FIG. 2 is a cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 38] FIG. 10 is a perspective view showing a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 39] FIG. 10 is a plan view of a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 40]FIG. 10 is a perspective view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 41] FIG. 10 is a perspective view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 42] FIG. 10 is a perspective view showing a main part of a semiconductor device according to a third embodiment of the present disclosure. [Figure 43] FIG. 10 is a perspective view showing a main part of a semiconductor device according to a third embodiment of the present disclosure. [Figure 44] FIG. 10 is a front view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 45] FIG. 10 is a bottom view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 46] FIG. 10 is a rear view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 47] FIG. 10 is a left side view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 48] FIG. 10 is a right side view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 49] FIG. 10 is a plan view of a main part showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 50] FIG. 50 is a plan view of the main part of FIG. 49 in which the first lead and the second lead are omitted. [Figure 51] FIG. 50 is a cross-sectional view taken along line LI-LI in FIG. 49. [Figure 52] FIG. 50 is a cross-sectional view taken along line LII-LII in FIG. 49. [Figure 53] FIG. 50 is a cross-sectional view taken along line LIII-LIII in FIG. 49. [Figure 54] 10 is a flowchart showing an example of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 55] FIG. 10 is a perspective view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 56] FIG. 10 is a perspective view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 57] FIG. 10 is a plan view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 58] FIG. 10 is a plan view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 59] FIG. 10 is a perspective view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 60] FIG. 10 is a perspective view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 61] FIG. 10 is a cross-sectional view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 62] FIG. 10 is a cross-sectional view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 63] FIG. 10 is a perspective view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. [Figure 64] FIG. 10 is a perspective view showing a step of a method for manufacturing a semiconductor device according to a third embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0012] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0013] First Embodiment 1 to 29 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a plurality of leads 1 to 6, a semiconductor element 7, a wire 99, and a sealing resin 8. The semiconductor device A1 is intended to perform current switching by being mounted on a substrate, for example, but the specific use of the semiconductor device A1 is not limited in any way.

[0014] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a perspective view showing the semiconductor device A1. FIG. 3 is a perspective view of a main part of the semiconductor device A1. FIG. 4 is a perspective view of a main part of the semiconductor device A1. FIG. 5 is a front view of the semiconductor device A1. FIG. 6 is a bottom view of the semiconductor device A1. FIG. 7 is a rear view of the semiconductor device A1. FIG. 8 is a left side view of the semiconductor device A1. FIG. 9 is a right side view of the semiconductor device A1. FIG. 10 is a plan view of a main part of the semiconductor device A1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 10. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 10. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 10. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 10. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 10. Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 10. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 10. Fig. 19 is a cross-sectional view taken along line XIX-XIX in Fig. 10.

[0015] For convenience of explanation, the thickness direction of the semiconductor device A1 will be referred to as the "z direction." In the following explanation, one side of the z direction will be referred to as the z1 side, and the other side of the z direction will be referred to as the z2 side. Note that terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component in the z direction, and do not necessarily define the relationship with the direction of gravity. The first direction perpendicular to the z direction will be referred to as the "x direction." In the following explanation, one side of the x direction will be referred to as the x2 side, and the other side of the x will be referred to as the x1 side. The second direction perpendicular to the z direction and the x direction will be referred to as the "y direction." In the following explanation, one side of the y direction will be referred to as the y1 side, and the other side of the y direction will be referred to as the y2 side.

[0016] [Leads 1-6] The leads 1 to 6 are intended to appropriately perform functions such as supporting the semiconductor element 7 and forming a conductive path that is electrically connected to the semiconductor element 7. The leads 1 to 6 are made of metal such as Cu (copper), Ni (nickel), or Fe (iron). The leads 1 to 6 are formed by processing a metal plate material, for example, by punching, bending, or etching. Furthermore, a plating layer made of Ag (silver), Ni, Au (gold), or the like may be provided at appropriate locations on each of the leads 1 to 6, as needed.

[0017] In this embodiment, the multiple leads 1 to 6 are described as a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and an island lead 6. That is, the multiple leads 1 to 6 include a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and an island lead 6. As will be described later, in this embodiment, the fourth lead 4 and the island lead 6 are connected to each other. Depending on the conduction state of each lead, the leads may be configured as separate pieces, or some of the leads may be connected to each other. In the following, an example will be described in which the first lead 1 and the second lead 2 are formed by punching and bending a metal plate material, and the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6 are formed by etching the metal plate material.

[0018] [Island Lead 6] 1 to 14, 16, and 17, the island lead 6 has a main surface 601, a back surface 602, a thick portion 61, a thin portion 62, and a plurality of extending portions 63. The main surface 601 faces the z1 side in the z direction and is a smooth surface perpendicular to the z direction in the illustrated example. The island lead 6 may have, for example, a recess or groove recessed from the main surface 601 as appropriate. The back surface 602 faces the z2 side in the z direction and is opposite to the main surface 601. In the illustrated example, the back surface 602 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti (titanium), or the like may be provided on the back surface 602 as appropriate.

[0019] The thick portion 61 is a portion where the main surface 601 and the back surface 602 overlap when viewed in the z direction, and in the example shown, is a rectangular portion when viewed in the z direction. The shape of the thick portion 61 is not limited in any way. The thickness of the thick portion 61 in the z direction is the distance between the main surface 601 and the back surface 602. The thin portion 62 is a portion that overlaps with the main surface 601 when viewed in the z direction but does not overlap with the back surface 602, and in the example shown, is connected to the thick portion 61 so as to extend to both sides in the x direction and both sides in the y direction when viewed in the z direction. The thickness of the thin portion 62 in the z direction is smaller than the distance between the main surface 601 and the back surface 602. The thicknesses of the thick portion 61 and the thin portion 62 are not limited in any way. For example, the thickness of the thick portion 61 is approximately 0.2 mm to 0.5 mm, and the thickness of the thin portion 62 is 0.1 mm to 0.4 mm. In the illustrated example, the portion of the thin portion 62 that extends from the thick portion 61 to the y1 side in the y direction is larger than the portion that extends to the y2 side.

[0020] The multiple extension portions 63 are portions extending from the end of the thin-walled portion 62. In the illustrated example, the multiple extension portions 63 extend from the thin-walled portion 62 on both sides in the x-direction. The number of extension portions 63 is not limited and may be multiple or one. In the illustrated example, two extension portions 63 are provided on the x1 side in the x-direction, and two extension portions 63 are provided on the x2 side. The extension portions 63 have end faces 631. The end faces 631 are surfaces facing the opposite side from the thin-walled portion 62 in the x-direction; in other words, they are surfaces facing outward in the x-direction. The illustrated end faces 631 are surfaces perpendicular to the x-direction. The positions in the x-direction of the two end faces 631 located on the x1 side of the x-direction are the same. Furthermore, the positions in the x-direction of the two end faces 631 located on the x2 side of the x-direction are the same.

[0021] [3rd Lead 3] As shown in Figures 2 to 4, 6, 7, and 10 to 15, the third lead 3 is disposed on the y1 side of the island lead 6 in the y direction and spaced apart from the island lead 6. The center of the third lead 3 in the x direction is located at approximately the same position in the x direction as the center of the island lead 6 in the x direction. The third lead 3 has a main surface 301, a back surface 302, a thick portion 31, a thin portion 32, and multiple extending portions 33. The main surface 301 faces the z1 side in the z direction and is a smooth surface perpendicular to the z direction in the illustrated example. The third lead 3 may have, for example, a recess or groove recessed from the main surface 301 as appropriate. The back surface 302 faces the z2 side in the z direction and is opposite to the main surface 301. In the illustrated example, the back surface 302 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 302 as appropriate. In this embodiment, the main surface 301 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 302 is located at approximately the same position as the back surface 602.

[0022] The thick portion 31 is a portion where the main surface 301 and the back surface 302 overlap when viewed in the z direction. In the illustrated example, the thick portion 31 is an elongated rectangular portion with the x direction as the longitudinal direction when viewed in the z direction. The shape of the thick portion 31 is not limited in any way. The thickness of the thick portion 31 in the z direction is the distance between the main surface 301 and the back surface 302. The thin portion 32 is a portion that overlaps the main surface 301 when viewed in the z direction but does not overlap the back surface 302. In the illustrated example, the thin portion 32 is connected to the thick portion 31 so as to extend to both sides in the x direction and to the y2 side in the y direction when viewed in the z direction. The thickness of the thin portion 32 in the z direction is smaller than the distance between the main surface 301 and the back surface 302. The thicknesses of the thick portion 31 and the thin portion 32 are not limited in any way. In this embodiment, the thickness of the thick portion 31 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 32 is approximately the same as the thickness of the thin portion 62.

[0023] In the illustrated example, the thin-walled portion 32 has a recess 321. The recess 321 is a portion recessed inward from the outside in the x direction. One recess 321 is provided on each side of the illustrated thin-walled portion 32 in the x direction. The shape of the recess 321 is not limited in any way, and in the illustrated example, it is semicircular.

[0024] The multiple extending portions 33 are portions extending from the end of the thick portion 31. In the illustrated example, the multiple extending portions 33 extend from the thick portion 31 toward the y1 side in the y direction. There is no limitation on the number of extending portions 33, and there may be multiple extending portions 33 or just one extending portion. In the illustrated example, four extending portions 33 are provided. The extending portion 33 has an end face 331. The end face 331 is a surface facing the opposite side to the thick portion 31 in the y direction, in other words, a surface facing the y1 side, which is the outside in the y direction. The illustrated end face 331 is a surface perpendicular to the y direction. The multiple end faces 331 are located at the same position in the y direction.

[0025] [4th lead 4] As shown in FIGS. 1 to 6 , 10 , 13 , 14 , 18 , and 19 , the fourth lead 4 is disposed on the y2 side in the y direction with respect to the island lead 6. The center of the fourth lead 4 in the x direction is located on the x1 side in the x direction with respect to the center of the island lead 6 in the x direction. The fourth lead 4 has a main surface 401, a back surface 402, a thick portion 41, a thin portion 42, and multiple extension portions 43. The main surface 401 faces the z1 side in the z direction and is a smooth surface perpendicular to the z direction in the illustrated example. The fourth lead 4 may have, for example, a recess or groove recessed from the main surface 401 as appropriate. The back surface 402 faces the z2 side in the z direction and is opposite to the main surface 401. In the illustrated example, the back surface 402 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be appropriately provided on the back surface 402. In this embodiment, the main surface 401 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 402 is located at approximately the same position as the back surface 602.

[0026] The thick portion 41 is a portion where the main surface 401 and the back surface 402 overlap when viewed in the z direction. In the illustrated example, the thick portion 41 is an elongated rectangular portion with the x direction as the longitudinal direction when viewed in the z direction. The shape of the thick portion 41 is not limited in any way. The thickness of the thick portion 41 in the z direction is the distance between the main surface 401 and the back surface 402. In this embodiment, the dimension of the thick portion 41 in the x direction is smaller than the dimension of the thick portion 31 in the x direction. The thin portion 42 is a portion that overlaps the main surface 401 when viewed in the z direction but does not overlap the back surface 402. In the illustrated example, the thin portion 42 is connected to the island lead 6 so as to extend to both sides in the x direction and the y1 side in the y direction when viewed in the z direction. The thin portion 42 is connected to the island lead 6 via a relay portion 49. The thickness of the thin portion 42 in the z direction is smaller than the distance between the main surface 401 and the back surface 402. There are no limitations on the thickness of the thick portion 41 and the thin portion 42. In this embodiment, the thickness of the thick portion 41 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 42 is approximately the same as the thickness of the thin portion 62.

[0027] In the illustrated example, the thin-walled portion 42 has a recess 421. The recess 421 is a portion recessed inward from the outside in the x direction. One recess 421 is provided on each side of the illustrated thin-walled portion 42 in the x direction. The shape of the recess 421 is not limited in any way, and in the illustrated example, it is semicircular.

[0028] The multiple extending portions 43 are portions extending from the end of the thick portion 41. In the illustrated example, the multiple extending portions 43 extend from the thick portion 41 toward the y2 side in the y direction. The number of extending portions 43 is not limited and may be multiple or may be one. In the illustrated example, three extending portions 43 are provided. The positions in the x direction of these three extending portions 43 are approximately the same as the positions in the x direction of the three extending portions 33 among the multiple extending portions 33 that are located on the x1 side in the x direction. The extending portion 43 has an end face 431. The end face 431 is a surface that faces the opposite side from the thick portion 41 in the y direction, in other words, a surface that faces the y2 side, which is the outside in the y direction. The illustrated end face 431 is a surface that is perpendicular to the y direction. The positions in the y direction of the multiple end faces 431 are the same.

[0029] [5th ​​Lead 5] As shown in FIGS. 1 to 6, 10 to 12, and 19, the fifth lead 5 is disposed on the y2 side in the y direction with respect to the island lead 6. The center of the fifth lead 5 in the x direction is located on the x2 side in the x direction with respect to the center of the island lead 6 in the x direction. The fifth lead 5 is disposed on the x2 side in the x direction with respect to the fourth lead 4. The fifth lead 5 has a main surface 501, a back surface 502, a thick portion 51, a thin portion 52, and an extending portion 53. The main surface 501 faces the z1 side in the z direction and is a smooth surface perpendicular to the z direction in the illustrated example. The fifth lead 5 may have, for example, a recess or groove recessed from the main surface 501 as appropriate. The back surface 502 faces the z2 side in the z direction and is opposite to the main surface 501. In the illustrated example, the back surface 502 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be appropriately provided on the back surface 502. In this embodiment, the main surface 501 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 502 is located at approximately the same position as the back surface 602.

[0030] The thick portion 51 is a portion where the main surface 501 and the back surface 502 overlap when viewed in the z direction. In the illustrated example, the thick portion 51 is an elongated rectangular portion with the x direction as the longitudinal direction when viewed in the z direction. The shape of the thick portion 51 is not limited in any way. The thickness of the thick portion 51 in the z direction is the distance between the main surface 501 and the back surface 502. In this embodiment, the dimension of the thick portion 51 in the x direction is smaller than the dimensions of the thick portions 31 and 41 in the x direction. The thin portion 32 is a portion that overlaps the main surface 301 when viewed in the z direction but does not overlap the back surface 302. In the illustrated example, the thin portion 32 is connected to the thick portion 51 so as to extend to both sides in the x direction and to the y1 side in the y direction when viewed in the z direction. The thickness of the thin portion 52 in the z direction is smaller than the distance between the main surface 501 and the back surface 502. The thickness of the thick portion 51 and the thin portion 52 are not limited in any way. In this embodiment, the thickness of the thick portion 51 is approximately the same as the thickness of the thick portion 61 , and the thickness of the thin portion 52 is approximately the same as the thickness of the thin portion 62 .

[0031] The extending portion 53 is a portion extending from the end of the thick portion 51. In the illustrated example, the extending portion 53 extends from the thick portion 51 toward the y2 side in the y direction. The number of extending portions 53 is not limited and may be multiple or may be one. In the illustrated example, one extending portion 53 is provided. The position in the x direction of the extending portion 53 is approximately the same as the position in the x direction of the extending portion 33 among the multiple extending portions 33 that is located closest to the x2 side in the x direction. The extending portion 53 has an end face 531. The end face 531 is a surface facing the opposite side to the thick portion 51 in the y direction, in other words, a surface facing the y2 side, which is the outer side in the y direction. The illustrated end face 531 is a surface perpendicular to the y direction. Furthermore, the position in the y direction of the end face 531 is the same as that of the multiple end faces 431.

[0032] [First Lead 1] 1 to 4, 8 to 16, and 19, the first lead 1 is arranged on the z1 side in the z direction relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The first lead 1 of this embodiment has a first main portion 11, a plurality of first branch portions 12, a first extending portion 13, a third extending portion 14, a first connecting portion 15, a first protruding portion 16, and a first recess 17. Note that FIGS. 20 to 24 are views showing only the first lead 1.

[0033] The first main portion 11 is a plate-like portion extending along the x and y directions, and in the illustrated example, has a substantially rectangular shape with the x direction as the longitudinal direction. The first main portion 11 in the illustrated example has a through hole 111. The through hole 111 penetrates the first main portion 11 in the z direction. The number of through holes 111 is not limited and may be one or more. In the illustrated example, the first main portion 11 has two through holes 111. The shape of the through holes 111 is not limited in any way and may be a circle, an ellipse, a rectangle, a polygon, or the like, as appropriate. In the illustrated example, the through hole 111 has an elliptical shape with the x direction as the longitudinal direction when viewed along the z direction.

[0034] The multiple first branch portions 12 extend from the first main portion 11 toward the y2 side in the y direction. The number of first branch portions 12 is not limited in any way, and in the illustrated example, five first branch portions 12 are provided. The multiple first branch portions 12 are arranged side by side in the x direction. In the illustrated example, the first branch portions 12 have a tip portion 121 and a base portion 122. The tip portion 121 is a portion located on the y2 side in the y direction with respect to the first main portion 11. The tip portion 121 is located on the z2 side of the first main portion 11 in the z direction. The shape of the tip portion 121 is not limited in any way, and in the illustrated example, it has a shape having a portion whose dimension in the x direction becomes smaller as it approaches the y2 side in the y direction. In addition, the tip portion 121 has a shape that extends along the y direction and is approximately perpendicular to the z direction. The root portion 122 is located between the tip portion 121 and the first main portion 11 and is connected to the tip portion 121 and the first main portion 11. The root portion 122 is inclined so that it approaches the tip portion 121 in the z direction (is located on the z2 side) as it moves from the first main portion 11 toward the tip portion 121 in the y direction (as it moves from the y1 side to the y2 side). In the illustrated example, the x-direction dimension of the first branch portions 12 located on both sides in the x direction is smaller than the x-direction dimension of the first branch portions 12 located between them. The y-direction dimension of the five first branch portions 12 is the same. The five first branch portions 12 are arranged biased toward the x2 side in the x direction with respect to the first main portion 11.

[0035] The first extending portion 13 is a portion extending from the first main portion 11. In this embodiment, the first extending portion 13 extends from the first main portion 11 along the x direction and further extends toward the x1 side from the end portion of the first main portion 11 on the x1 side in the x direction. The first extending portion 13 has a first end face 131. The first end face 131 is a surface facing the opposite side to the first main portion 11 in the x direction; in other words, it is a surface facing the x1 side, which is the outer side in the x direction. The illustrated first end face 131 is a surface perpendicular to the x direction. Furthermore, the position of the first end face 131 in the x direction is the same as the position in the x direction of the multiple end faces 631 located on the x1 side in the x direction.

[0036] The third extending portion 14 is a portion extending from the first main portion 11. In this embodiment, the third extending portion 14 extends from the first main portion 11 along the x direction and further extends toward the x2 side from the end of the first main portion 11 on the x2 side in the x direction. The third extending portion 14 has a third end face 141. The third end face 141 is a surface facing the opposite side to the first main portion 11 in the x direction; in other words, it is a surface facing the x2 side, which is the outer side in the x direction. The illustrated third end face 141 is a surface perpendicular to the x direction. Furthermore, the position of the third end face 141 in the x direction is the same as the position in the x direction of the multiple end faces 631 located on the x2 side in the x direction.

[0037] The first connecting portion 15 is connected to an end portion of the first main portion 11 on the y1 side in the y direction, opposite to the first branch portion 12. The first connecting portion 15 extends from the first main portion 11 to the z2 side in the z direction. The shape of the first connecting portion 15 is not limited in any way, and in the example shown, it is a rectangle with the x direction as its longitudinal direction. In the example shown, the center of the first connecting portion 15 in the x direction is located on the x1 side of the center of the first main portion 11 in the x direction.

[0038] The first protrusion 16 is connected to an end of the first main portion 11 on the y1 side in the y direction, opposite the first branch portion 12, and is located outside the first connecting portion 15 in the x direction. In the illustrated example, two first protrusions 16 are provided on both sides of the first connecting portion 15 in the x direction. The first protrusions 16 extend from the first main portion 11 to the z2 side in the z direction. The shape of the first protrusions 16 is not limited in any way, and in the illustrated example, they are rectangular with the z direction as the longitudinal direction. The dimension of the first protrusions 16 in the z direction is larger than the dimension of the first connecting portion 15 in the z direction. That is, the tip of the first protrusion 16 in the z direction is located on the z2 side of the tip of the first connecting portion 15 in the z direction. The first recess 17 is provided between the first connecting portion 15 and the first protrusion 16. The first recess 17 is recessed toward the z1 side in the z direction.

[0039] The tip of the first connection portion 15 of the first lead 1 on the z2 side in the z direction is conductively joined to the main surface 301 of the third lead 3 via a fourth conductive joint portion 94. The fourth conductive joint portion 94 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc. In the illustrated example, the first connection portion 15 is conductively joined to the thin portion 32 of the third lead 3.

[0040] Furthermore, the tip portion of the first protrusion 16 of the first lead 1 enters the recess 321 of the thin-walled portion 32 of the third lead 3 from the z1 side in the z direction. In the illustrated example, the first protrusion 16 is spaced apart from the recess 321, but the first protrusion 16 may be configured to abut against a part of the recess 321.

[0041] [2nd Lead 2] As shown in Figures 1 to 5, 8, 10, 12 to 14, and 17 to 19, the second lead 2 is arranged on the z1 side in the z direction relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The second lead 2 is also arranged on the y2 side in the y direction relative to the first lead 1. The second lead 2 of this embodiment has a second main portion 21, multiple second branch portions 22, a second extending portion 23, a fourth extending portion 24, a second connecting portion 25, a second protruding portion 26, a second recess 27, and a linking portion 29. Note that Figures 25 to 29 are views showing only the second lead 2.

[0042] The second main portion 21 is a plate-like portion extending along the x and y directions, and in the illustrated example, has a substantially rectangular shape with the x direction as the longitudinal direction. The second main portion 21 in the illustrated example has a through hole 211. The through hole 211 penetrates the second main portion 21 in the z direction. The number of through holes 211 is not limited and may be one or more. In the illustrated example, the second main portion 21 has two through holes 211. The shape of the through hole 211 is not limited in any way and may be a circle, an ellipse, a rectangle, a polygon, or the like, as appropriate. In the illustrated example, the through hole 211 has an elliptical shape with the x direction as the longitudinal direction when viewed along the z direction. In this embodiment, the second main portion 21 is disposed at the same position as the first main portion 11 in the z direction.

[0043] The multiple second branch portions 22 extend from the second main portion 21 toward the y1 side in the y direction. The number of second branch portions 22 is not limited in any way, and in the illustrated example, four second branch portions 22 are provided. The multiple second branch portions 22 are arranged side by side in the x direction. In this embodiment, the multiple first branch portions 12 and the multiple second branch portions 22 are arranged alternately in the x direction. In the illustrated example, the second branch portion 22 has a tip portion 221 and a base portion 222. The tip portion 221 is a portion located on the y1 side in the y direction with respect to the second main portion 21. The tip portion 221 is located on the z2 side of the second main portion 21 in the z direction. In this embodiment, the tip portion 221 is located at the same position as the tip portion 121 in the z direction. The shape of the tip portion 221 is not limited in any way, and in the illustrated example, the tip portion 221 has a shape having a portion whose dimension in the x direction decreases toward the y1 side in the y direction. The tip portion 221 has a shape that extends along the y direction and is approximately perpendicular to the z direction. The root portion 222 is located between the tip portion 221 and the second main portion 21 and is connected to the tip portion 221 and the second main portion 21. The root portion 222 is inclined so that it approaches the tip portion 221 in the z direction (is located on the z2 side) as it moves from the second main portion 21 toward the tip portion 221 in the y direction (as it moves from the y2 side toward the y1 side). In the illustrated example, the dimensions of the multiple second branch portions 22 in the x direction and the y direction are the same. The five second branch portions 22 are arranged biased toward the x2 side in the x direction with respect to the second main portion 21.

[0044] The second extending portion 23 is a portion extending from the second main portion 21. In this embodiment, the second extending portion 23 extends from the second main portion 21 along the x direction and further extends toward the x1 side from the end portion of the second main portion 21 on the x1 side in the x direction. The second extending portion 23 has a second end face 231. The second end face 231 is a surface facing the opposite side to the second main portion 21 in the x direction; in other words, it is a surface facing the x1 side, which is the outer side in the x direction. The illustrated second end face 231 is a surface perpendicular to the x direction. In this embodiment, the position of the second end face 231 in the x direction is the same as that of the first end face 131 and the end face 631 located on the x1 side in the x direction.

[0045] The fourth extension portion 24 is a portion extending from the second main portion 21. In this embodiment, the fourth extension portion 24 is connected to the second main portion 21 via a connecting portion 29. The connecting portion 29 has a smaller dimension in the y direction than the second main portion 21 and the fourth extension portion 24. As such, the fourth extension portion 24 in the present disclosure is not limited to a configuration in which it is directly connected to the second main portion 21, but also includes a configuration in which it is connected to the second main portion 21 via another portion. This also applies to the second extension portion 23. Furthermore, the first extension portion 13 and the third extension portion 14 described above are not limited to a configuration in which they are directly connected to the first main portion 11, but also include a configuration in which they are connected to the first main portion 11 via another portion. The fourth extension portion 24 extends along the y direction and further extends toward the y2 side in the y direction. The fourth extension portion 24 has a fourth end surface 241. The fourth end face 241 is a surface facing the opposite side to the second main portion 21 in the y direction, in other words, a surface facing the y2 side, which is the outside in the y direction. The illustrated fourth end face 241 is a surface perpendicular to the y direction. The position of the fourth end face 241 in the y direction is the same as that of the multiple end faces 431 and 531. In the illustrated example, the position of the fourth extension portion 24 in the x direction is the same as that of the multiple second branch portions 22 that is located closest to the x2 side in the x direction.

[0046] The second connecting portion 25 is connected to an end portion of the second main portion 21 on the y2 side in the y direction, opposite to the second branch portion 22. The second connecting portion 25 extends from the second main portion 21 to the z2 side in the z direction. The shape of the second connecting portion 25 is not limited in any way, and in the example shown, it is a rectangle with the x direction as its longitudinal direction. In the example shown, the center of the second connecting portion 25 in the x direction is the same as the center of the second main portion 21 in the x direction.

[0047] The second protrusion 26 is connected to an end of the second main portion 21 on the y2 side in the y direction, opposite the second branch portion 22, and is located outward in the x direction from the second connecting portion 25. In the illustrated example, two second protrusions 26 are provided on both sides of the second connecting portion 25 in the x direction. The second protrusions 26 extend from the second main portion 21 to the z2 side in the z direction. The shape of the second protrusions 26 is not limited in any way, and in the illustrated example, they are rectangular with the z direction as the longitudinal direction. The dimension of the second protrusions 26 in the z direction is larger than the dimension of the second connecting portion 25 in the z direction. That is, the tip of the second protrusion 26 in the z direction is located on the z2 side of the tip of the second connecting portion 25 in the z direction. The second recess 27 is provided between the second connecting portion 25 and the second protrusion 26. The second recess 27 is recessed toward the z1 side in the z direction.

[0048] The tip of the second connection portion 25 of the second lead 2 on the z2 side in the z direction is conductively joined to the main surface 401 of the fourth lead 4 via a fifth conductive joint portion 95. The fifth conductive joint portion 95 is, for example, solder. In the illustrated example, the second connection portion 25 is conductively joined to the thick portion 41 of the fourth lead 4.

[0049] Furthermore, the tip portion of the second protrusion 26 of the second lead 2 enters the recess 421 of the thin-walled portion 42 of the fourth lead 4 from the z1 side in the z direction. In the illustrated example, the second protrusion 26 is spaced apart from the recess 421, but the second protrusion 26 may be configured to abut against a part of the recess 421.

[0050] [Semiconductor element 7] The semiconductor element 7 is an element that exhibits the electrical functions of the semiconductor device A1. The specific configuration of the semiconductor element 7 is not limited in any way, and in this embodiment, the semiconductor element 7 is a semiconductor element using a nitride semiconductor, more specifically, a HEMT (High Electron Mobility Transistor) using gallium nitride (GaN). As shown in FIGS. 3, 10 to 14, and 17, the semiconductor element 7 has an element body 70, a first electrode 71, a second electrode 72, and a third electrode 73.

[0051] The element body 70 is, for example, a portion in which a substrate layer, a buffer layer, and a nitride layer (all not shown) are stacked. The element body 70 has an element main surface 701 and an element back surface 702. The element main surface 701 faces the z1 side in the z direction. The element back surface 702 faces the z2 side in the z direction, facing the opposite side to the element main surface 701. In the illustrated example, a metal layer is provided on the element back surface 702. This metal layer and the main surface 601 of the island lead 6 are joined by a first conductive joint 91. The first conductive joint 91 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, or the like. The above-mentioned metal layer is provided for joining by the first conductive joint 91, but the metal layer may be omitted. Alternatively, the metal layer may be at the same potential as the second electrode 72, etc. In the illustrated example, the semiconductor element 7 is disposed at a position overlapping a part of the thick portion 61 and a part of the thin portion 62 of the island lead 6 when viewed in the z direction.

[0052] The first electrode 71, the second electrode 72, and the third electrode 73 are disposed on the element principal surface 701. In this embodiment, a plurality of first electrodes 71 and a plurality of second electrodes 72 are provided. The number of the first electrodes 71 and the second electrodes 72 is not limited. In the illustrated example, five first electrodes 71 and four second electrodes 72 are provided. The first electrode 71 functions as a drain electrode. The second electrode 72 functions as a source electrode. The plurality of first electrodes 71 and the plurality of second electrodes 72 are alternately arranged in the x direction. The shapes of the first electrodes 71 and the second electrodes 72 are not limited, and in the illustrated example, they are elongated shapes extending in the y direction. The first electrode 71 has a portion whose dimension in the x direction decreases from the y1 side toward the y2 side in the y direction. The second electrode 72 has a portion whose dimension in the x direction decreases from the y2 side toward the y1 side in the y direction.

[0053] Tips 121 of the first branches 12 of the first lead 1 are conductively joined to the first electrodes 71 via second conductive joints 92. The second conductive joints 92 are, for example, solder, Ag paste, Ag sintered material, Cu sintered material, etc. Tips 221 of the second branches 22 of the second lead 2 are conductively joined to the second electrodes 72 via third conductive joints 93. The third conductive joints 93 are, for example, solder.

[0054] The third electrode 73 functions as a gate electrode. The third electrode 73 is disposed on the y2 side in the y direction relative to the multiple first electrodes 71 and on the outside in the x direction relative to the multiple second electrodes 72. In the illustrated example, two third electrodes 73 are provided on both sides in the x direction, sandwiching the multiple second electrodes 72. Of these, in the illustrated configuration, the third electrode 73 disposed on the x2 side in the x direction is used and is electrically connected to the fifth lead 5 by a wire 99. Note that instead of the wire 99, a conductive member made of a metal plate material may be used to electrically connect the third electrode 73 and the fifth lead 5. Alternatively, only one third electrode 73 may be disposed on the x2 side in the x direction.

[0055] [Sealing resin 8] The sealing resin 8 covers a portion of each of the leads 1 to 6, the semiconductor element 7, and the wires 99, and is made of an insulating material such as epoxy resin. As shown in Figures 1, 2, 5 to 9, and 11 to 19, the sealing resin 8 of this embodiment has a first surface 81, a second surface 82, a third surface 83, a fourth surface 84, a fifth surface 85, and a sixth surface 86, and is shaped like a rectangular parallelepiped.

[0056] The first surface 81 is a surface facing the z1 side in the z direction. In the illustrated example, the first surface 81 is a plane perpendicular to the z direction. The second surface 82 is a surface facing the z2 side in the z direction. In the illustrated example, the second surface 82 is a plane perpendicular to the z direction. The third surface 83 is a surface facing the y1 side in the y direction. In the illustrated example, the third surface 83 is a plane perpendicular to the y direction. The fourth surface 84 is a surface facing the y2 side in the y direction. In the illustrated example, the fourth surface 84 is a plane perpendicular to the y direction. The fifth surface 85 is a surface facing the x1 side in the x direction. In the illustrated example, the fifth surface 85 is a plane perpendicular to the x direction. The sixth surface 86 is a surface facing the x2 side in the x direction. In the illustrated example, the sixth surface 86 is a plane perpendicular to the x direction.

[0057] In this embodiment, the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 are exposed on the z2 side in the z direction from the second surface 82. The second surface 82, the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 are flush with one another. However, all or any of the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 may protrude slightly from the second surface 82.

[0058] Furthermore, multiple end faces 331 of the third lead 3 are exposed on the y1 side in the y direction from the third surface 83. The third surface 83 and the multiple end faces 331 of the third lead 3 are flush with each other. However, all or any of the multiple end faces 331 may slightly protrude from the third surface 83.

[0059] Furthermore, the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 are exposed on the y2 side in the y direction from the fourth surface 84. The fourth surface 84, the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 are flush with one another. However, all or any of the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 may protrude slightly from the fourth surface 84.

[0060] Furthermore, the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 are exposed on the x1 side in the x direction from the fifth surface 85. The fifth surface 85, the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 are flush with one another. However, all or any of the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 may protrude slightly from the fifth surface 85.

[0061] Furthermore, the third end face 141 of the first lead 1 and the multiple end faces 631 of the island lead 6 are exposed on the x2 side in the x direction from the sixth surface 86. The sixth surface 86, the third end face 141 of the first lead 1, and the multiple end faces 631 of the island lead 6 are flush with one another. However, all or any of the third end face 141 of the first lead 1 and the multiple end faces 631 of the island lead 6 may protrude slightly from the sixth surface 86.

[0062] Next, an example of a method for manufacturing the semiconductor device A1 will be described below with reference to FIGS.

[0063] The manufacturing method of this embodiment includes a first preparation step, a second preparation step, a mounting step, a third preparation step, a placement step, and a curing step.

[0064] [First preparation process] First, a first lead frame LF1 is prepared as shown in Fig. 30. The first lead frame LF1 includes a frame portion f1, a third portion 30, a fourth portion 40, a fifth portion 50, and an island portion 60. The frame portion f1 is a frame-shaped portion that surrounds the third portion 30, the fourth portion 40, the fifth portion 50, and the island portion 60 in the x and y directions.

[0065] The third portion 30 corresponds to the thick portion 31 and the thin portion 32 of the third lead 3 of the semiconductor device A1 described above. The third portion 30 is connected to the frame portion f1 by a plurality of connecting portions 330. The fourth portion 40 corresponds to the thick portion 41 and the thin portion 42 of the fourth lead 4 of the semiconductor device A1 described above. The fourth portion 40 is connected to the frame portion f1 by a plurality of connecting portions 430. The fifth portion 50 corresponds to the thick portion 51 and the thin portion 52 of the fifth lead 5 of the semiconductor device A1 described above. The fifth portion 50 is connected to the frame portion f1 by a connecting portion 530. The island portion 60 corresponds to the thick portion 61 and the thin portion 62 of the semiconductor device A1 described above. The island portion 60 is connected to the frame portion f1 by a plurality of connecting portions 630. The island portion 60 is connected to the fourth portion 40 by a relay portion 49. In the first lead frame LF1, the main surface 301, the main surface 401, the main surface 501, and the main surface 601 are flush with one another. Also, the back surface 302, the back surface 402, the back surface 502, and the back surface 602 are flush with one another.

[0066] [Second preparation process] Next, the semiconductor element 7 is prepared. The semiconductor element 7 has the same configuration as that described for the semiconductor device A1 above. Note that the order of the first preparation step and the second preparation step is not limited in any way.

[0067] [Mounting process] 31, the semiconductor element 7 is mounted on the island portion 60. In this mounting process, a first conductive paste 910 is interposed between the element rear surface 702 of the semiconductor element 7 and the main surface 601 of the island portion 60. The first conductive paste 910 is, for example, a solder paste.

[0068] [Third preparation process] Next, the second lead frame LF2 is prepared. The second lead frame LF2 includes a frame portion f2, a first portion 10, and a second portion 20. The frame portion f2 is a frame-shaped portion that surrounds the first portion 10 and the second portion 20.

[0069] The first portion 10 corresponds to the first main portion 11, the multiple first branch portions 12, the first connecting portion 15, the first protrusion 16, and the first recess 17 of the first lead 1 of the semiconductor device A1 described above. The first portion 10 is connected to the frame portion f2 by the first connecting portion 130 and the third connecting portion 140. The first connecting portion 130 and the third connecting portion 140 extend from the first portion 10 to both sides in the x-direction. The second portion 20 corresponds to the second main portion 21, the multiple second branch portions 22, the second connecting portion 25, the second protrusion 26, the second recess 27, and the connecting portion 29 of the second lead 2 of the semiconductor device A1 described above. The second portion 20 is connected to the frame portion f2 by the second connecting portion 230 and the fourth connecting portion 240. The second connecting portion 230 extends from the second portion 20 to the x1 side in the x-direction. The fourth connecting portion 240 extends from the second portion 20 to the y2 side in the y direction. The order of the third preparation step, the first preparation step, the second preparation step, and the mounting step is not limited in any way.

[0070] [Placement process] Next, as shown in FIGS. 32 to 34, the second lead frame LF2 is arranged. FIG. 33 is a cross-sectional view in the yz plane intersecting the first branch portion 12, and FIG. 34 is a cross-sectional view in the yz plane intersecting the second branch portion 22. In this arrangement step, a second conductive paste 920 is interposed between the tip portions 121 of the first branch portions 12 of the first portion 10 and the first electrodes 71 of the semiconductor element 7. In addition, a third conductive paste 930 is interposed between the tip portions 221 of the second branch portions 22 of the second portion 20 and the second electrodes 72 of the semiconductor element 7. The second conductive paste 920 and the third conductive paste 930 are, for example, solder paste. In addition, in this arrangement step, a fourth conductive paste 940 is interposed between the tip of the first connection portion 15 of the first portion 10 on the z2 side in the z direction and the main surface 301 of the third portion 30. Furthermore, a fifth conductive paste 950 is interposed between the tip of the second connection portion 25 of the second portion 20 on the z2 side in the z direction and the main surface 401 of the fourth portion 40. The fourth conductive paste 940 and the fifth conductive paste 950 are, for example, solder paste.

[0071] [Curing process] Next, the first conductive paste 910, the second conductive paste 920, the third conductive paste 930, the fourth conductive paste 940, and the fifth conductive paste 950 are cured. This curing is performed, for example, by heating the first lead frame LF1, the second lead frame LF2, and the semiconductor element 7, which have undergone the placement process, to a predetermined temperature in a reflow furnace and then cooling them. As a result, the first conductive paste 910, the second conductive paste 920, the third conductive paste 930, the fourth conductive paste 940, and the fifth conductive paste 950 harden, respectively, to become the first conductive joint 91, the second conductive joint 92, the third conductive joint 93, the fourth conductive joint 94, and the fifth conductive joint 95 described in the semiconductor device A1. Then, the first lead frame LF1, the second lead frame LF2, and the semiconductor element 7 are electrically connected to one another at various locations.

[0072] Thereafter, the third electrode 73 and the main surface 501 of the fifth lead 5 are electrically connected by a wire 99. Next, as shown in FIG. 35 , a portion of each of the first lead frame LF1 and the second lead frame LF2, the semiconductor element 7, and the wire 99 are sealed with sealing resin 8. Thereafter, the first connecting portion 130, the third connecting portion 140, the second connecting portion 230, the fourth connecting portion 240, the plurality of connecting portions 330, the plurality of connecting portions 430, the connecting portion 530, and the plurality of connecting portions 630 are cut along the sealing resin 8. As a result, the portions of first connecting portion 130, third connecting portion 140, second connecting portion 230, fourth connecting portion 240, multiple connecting portions 330, multiple connecting portions 430, connecting portion 530, and multiple connecting portions 630 that remain in sealing resin 8 become first extending portion 13, third extending portion 14, second extending portion 23, fourth extending portion 24, multiple extending portions 33, multiple extending portions 43, extending portion 53, and multiple extending portions 63. The cut surfaces at this time become first end surface 131, third end surface 141, second end surface 231, fourth end surface 241, multiple end surfaces 331, multiple end surfaces 431, end surface 531, and multiple end surfaces 631, respectively. Through the above steps, semiconductor device A1 is obtained.

[0073] Next, the operation of the semiconductor device A1 and the method for manufacturing the semiconductor device A1 will be described.

[0074] According to this embodiment, as shown in Fig. 31, in the second lead frame LF2, the first portion 10 is connected to the frame portion f2 via the first connecting portion 130, and the second portion 20 is connected to the frame portion f2 via the second connecting portion 230. Therefore, even if the first conductive paste 910, the second conductive paste 920, and the third conductive paste 930 are in a molten state in the arrangement step shown in Fig. 32 and the subsequent curing step, it is possible to prevent the first portion 10 and the second portion 20 from being unduly misaligned. Therefore, according to this embodiment, the first lead 1 (first portion 10) and the second lead 2 (second portion 20), which are conductive members, can be arranged more accurately.

[0075] The first portion 10 is connected to the frame portion f2 via the third connecting portion 140 in addition to the first connecting portion 130. This allows the frame portion f2 to more firmly support the first portion 10. This is preferable for more accurate positioning of the first lead 1 (first portion 10). The second portion 20 is connected to the frame portion f2 via the fourth connecting portion 240 in addition to the second connecting portion 230. This allows the frame portion f2 to more firmly support the second portion 20. This is preferable for more accurate positioning of the second lead 2 (second portion 20). Note that if the functions of the third connecting portion 140 and the fourth connecting portion 240 are not essential, the third connecting portion 140 (third extending portion 14) and the fourth connecting portion 240 (fourth extending portion 24) may not be provided.

[0076] The first connecting portion 130 and the third connecting portion 140 are located on opposite sides of the first portion 10 in the x direction. With this configuration, the first portion 10 can be supported more reliably.

[0077] The fourth connecting portion 240 extends to the y2 side in the y direction, but does not extend to the x2 side in the x direction. This makes it possible to prevent the fourth connecting portion 240 from covering most of the third electrode 73 and the fifth lead 5. This makes it possible to suppress undue interference when the third electrode 73 and the fifth lead 5 are electrically connected by the wire 99.

[0078] The plurality of first electrodes 71 and the plurality of second electrodes 72 are alternately arranged in the x direction, and accordingly, the plurality of first branch portions 12 and the plurality of second branch portions 22 are alternately arranged in the x direction. In this configuration, the first portion 10 and the second portion 20 can be positioned more accurately, which is suitable for appropriately establishing a conductive connection between the first electrode 71 and the first branch portion 12 and between the second electrode 72 and the second branch portion 22, and for example, it is possible to prevent the first branch portion 12 and the second branch portion 22 from coming too close to each other.

[0079] By electrically connecting the tip of the first connection portion 15 on the z2 side in the z direction to the main surface 301 of the third lead 3, it is possible to reduce the bonding area between the first lead 1 and the third lead 3. Furthermore, by electrically connecting the tip of the second connection portion 25 on the z2 side in the z direction to the main surface 401 of the fourth lead 4, it is possible to reduce the bonding area between the second lead 2 and the fourth lead 4. This allows the semiconductor device A1 to be miniaturized. Furthermore, this effect can be more easily achieved by reliably supporting the first portion 10 and the second portion 20 by the frame portion f2.

[0080] 36 to 64 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiments are given the same reference numerals as those in the above-described embodiments. The configurations of the parts in each embodiment and each modified example can be mutually combined to the extent that no technical contradiction occurs.

[0081] <First Modification of First Embodiment> 36 and 37 show a first modified example of the semiconductor device A1. The semiconductor device A11 of this modified example differs from the semiconductor device A1 described above in the configurations of the first lead 1, the second lead 2, the third lead 3, and the fourth lead 4.

[0082] The first lead 1 of this modification has a first main portion 11, a plurality of first branch portions 12, a first extending portion 13, a third extending portion 14, and a first connecting portion 15, but does not have the above-mentioned first protruding portion 16 or first recess 17. Furthermore, the above-mentioned recess 321 is not formed in the thin-walled portion 32 of the third lead 3. The tip portion of the first connecting portion 15 on the z2 side in the z direction is conductively joined to the main surface 301 of the third lead 3 via a fourth conductive joint portion 94.

[0083] The second lead 2 has a second main portion 21, multiple second branch portions 22, a second extending portion 23, a fourth extending portion 24, a second connecting portion 25, and a linking portion 29, but does not have the above-mentioned second protruding portion 26 or second recess 27. In addition, the above-mentioned recess 421 is not formed in the thin-walled portion 42 of the fourth lead 4. The tip portion of the second connecting portion 25 on the z2 side in the z direction is conductively joined to the main surface 401 of the fourth lead 4 via a fifth conductive joint portion 95.

[0084] As with the semiconductor device A1 described above, this modification also allows for more accurate positioning of the first lead 1 and the second lead 2. Furthermore, as can be seen from this modification, the specific configurations of the first lead 1, the second lead 2, the third lead 3, and the fourth lead 4 can be modified in various ways.

[0085] Second Embodiment 38 and 39 show a semiconductor device according to a second embodiment of the present disclosure. Similar to the semiconductor device A1 described above, the semiconductor device A2 of this embodiment includes a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, an island lead 6, a semiconductor element 7, a wire 99, and a sealing resin 8. The semiconductor device A2 is manufactured by the same manufacturing method as the semiconductor device A1.

[0086] The semiconductor element 7 of this embodiment has fewer first electrodes 71, second electrodes 72, and third electrodes 73 than the semiconductor element 7 of the semiconductor device A1. Specifically, the semiconductor element 7 has two first electrodes 71, two second electrodes 72, and one third electrode 73. Correspondingly, the first lead 1 has two first branches 12. Furthermore, the second lead 2 has two second branches 22.

[0087] In this embodiment, the two first branch portions 12 have different lengths in the y direction. The first branch portion 12 located on the x1 side in the x direction has a longer length in the y direction than the first branch portion 12 located on the x2 side. The first branch portion 12 located on the x2 side in the x direction is disposed in a position close to the third electrode 73 and the wire 99.

[0088] The semiconductor element 7 of this embodiment is mounted so that its center in the x direction coincides with or is close to the center of the island lead 6 in the x direction. That is, in the semiconductor device A1, the center of the semiconductor element 7 in the x direction is located on the x2 side of the center of the island lead 6 in the x direction. The distance between the centers of the semiconductor element 7 and the island lead 6 in the x direction in the semiconductor device A2 is shorter than the center distance between them in the semiconductor device A1. Furthermore, in the semiconductor device A2, when viewed in the z direction, the portions of the island lead 6 that extend from the semiconductor element 7 to both sides in the x direction are approximately the same on the x1 side and the x2 side. In the semiconductor device A1, the portion of the island lead 6 that extends from the semiconductor element 7 is larger on the x1 side than on the x2 side.

[0089] Furthermore, the island lead 6 of this embodiment does not have the extending portion 63 described in the semiconductor device A1. The island lead 6 is connected to the fourth lead 4 by the relay portion 49 described above. Therefore, in manufacturing the semiconductor device A2, the island portion 60 that will become the island lead 6 is connected to the above-mentioned frame portion f2 via the fourth portion 40 that will become the fourth lead 4.

[0090] This embodiment also allows for more accurate positioning of the first lead 1 and the second lead 2. Furthermore, depending on the number and positioning of the first electrodes 71 and the second electrodes 72 of the semiconductor element 7 and the relative positions of the island lead 6 and the semiconductor element 7, it is possible to further reduce the dimension of the semiconductor device A2 in the x direction compared to, for example, the semiconductor device A1.

[0091] <Third embodiment> 40 to 53 show a semiconductor device according to a third embodiment of the present disclosure. The semiconductor device B1 of this embodiment includes a plurality of leads 1 to 6, a semiconductor element 7, a wire 99, and a sealing resin 8. The semiconductor device B1 is intended to perform current switching by being mounted on a substrate, for example, but the specific use of the semiconductor device B1 is not limited in any way.

[0092] [Leads 1-6] The multiple leads 1 to 6 are intended to appropriately fulfill functions such as supporting the semiconductor element 7 and forming a conductive path that is electrically connected to the semiconductor element 7. The multiple leads 1 to 6 are made of a metal such as Cu, Ni, or Fe. The multiple leads 1 to 6 are formed, for example, by subjecting a metal plate material to a process selected from punching, bending, or etching. Furthermore, a plating layer made of Ag, Ni, Au, or the like may be provided at appropriate locations on each of the multiple leads 1 to 6, as needed.

[0093] In this embodiment, the multiple leads 1 to 6 are described as a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and an island lead 6. That is, the multiple leads 1 to 6 include a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and an island lead 6. As will be described later, in this embodiment, the fourth lead 4 and the island lead 6 are connected to each other. Depending on the conduction state of the leads 1 to 6, the leads may be configured as separate pieces, or some of the leads may be connected to each other. In the following description, an example will be given in which the first lead 1 and the second lead 2 are formed by punching and bending a metal plate material, and the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6 are formed by etching the metal plate material.

[0094] [Island Lead 6] As shown in FIGS. 40 to 42, 45, and 47 to 53, the island lead 6 has a main surface 601, a back surface 602, a thick portion 61, a thin portion 62, and a plurality of extending portions 63. The main surface 601 faces the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The island lead 6 may have, for example, a recess or groove recessed from the main surface 601 as appropriate. The back surface 602 faces the z2 side in the z direction, and faces the opposite side to the main surface 601. In the illustrated example, the back surface 602 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 602 as appropriate.

[0095] The thick portion 61 is a portion where the main surface 601 and the back surface 602 overlap when viewed in the z direction, and in the example shown, is a rectangular portion when viewed in the z direction. The shape of the thick portion 61 is not limited in any way. The thickness of the thick portion 61 in the z direction is the distance between the main surface 601 and the back surface 602. The thin portion 62 is a portion that overlaps with the main surface 601 when viewed in the z direction but does not overlap with the back surface 602, and in the example shown, is connected to the thick portion 61 so as to extend to both sides in the x direction and both sides in the y direction when viewed in the z direction. The thickness of the thin portion 62 in the z direction is smaller than the distance between the main surface 601 and the back surface 602. The thicknesses of the thick portion 61 and the thin portion 62 are not limited in any way. For example, the thickness of the thick portion 61 is approximately 0.2 mm to 0.5 mm, and the thickness of the thin portion 62 is 0.1 mm to 0.4 mm. In the illustrated example, the portion of the thin portion 62 that extends from the thick portion 61 to the y1 side in the y direction is larger than the portion that extends to the y2 side.

[0096] The multiple extension portions 63 are portions extending from the end of the thin-walled portion 62. In the illustrated example, the multiple extension portions 63 extend from the thin-walled portion 62 on both sides in the x-direction. The number of extension portions 63 is not limited and may be multiple or one. In the illustrated example, two extension portions 63 are provided on the x1 side in the x-direction, and two extension portions 63 are provided on the x2 side. The extension portions 63 have end faces 631. The end faces 631 are surfaces facing the opposite side from the thin-walled portion 62 in the x-direction; in other words, they are surfaces facing outward in the x-direction. The illustrated end faces 631 are surfaces perpendicular to the x-direction. The positions in the x-direction of the two end faces 631 located on the x1 side of the x-direction are the same. Furthermore, the positions in the x-direction of the two end faces 631 located on the x2 side of the x-direction are the same.

[0097] [First Lead 1] 42, 51, and 52, the first lead 1 is arranged on the z1 side in the z direction relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. As shown in FIGS. 40 to 43, 47 to 49, 51, and 52, the first lead 1 of this embodiment has a first main portion 11, a plurality of first branch portions 12, a first extending portion 13, a third extending portion 14, and a first connecting portion 15.

[0098] The first main portion 11 is a plate-like portion along the xy plane, and in the illustrated example, has a substantially rectangular shape with the x direction as the longitudinal direction. The first main portion 11 in the illustrated example has a through hole 111. The through hole 111 penetrates the first main portion 11 in the z direction. The number of through holes 111 is not limited and may be one or more. In the illustrated example, the first main portion 11 has two through holes 111. The shape of the through holes 111 is not limited in any way and may be a circle, an ellipse, a rectangle, a polygon, or the like, as appropriate. In the illustrated example, the through hole 111 has an elliptical shape with the x direction as the longitudinal direction when viewed along the z direction.

[0099] The multiple first branch portions 12 extend from the first main portion 11 toward the y2 side in the y direction. The number of first branch portions 12 is not limited, and in the example shown, two first branch portions 12 are provided. The multiple first branch portions 12 are arranged side by side in the x direction. Each first branch portion 12 has a tip portion 121 and a base portion 122. The tip portion 121 is located on the y2 side in the y direction with respect to the first main portion 11. The tip portion 121 is located on the z2 side of the first main portion 11 in the z direction. The shape of the tip portion 121 is not limited, and in the example shown, it is rectangular with the y direction as the longitudinal direction when viewed along the z direction. The tip portion 121 is perpendicular to the z direction. In the example shown in FIG. 51, the end of the tip portion 121 on the y2 side in the y direction is thinner than other portions, but the thickness of the tip portion 121 may be uniform. The root portion 122 is located between the tip portion 121 and the first main portion 11 and is connected to the tip portion 121 and the first main portion 11. The root portion 122 is inclined in the y direction from the first main portion 11 toward the tip portion 121 (from the y1 side toward the y2 side) so as to approach the semiconductor element 7 in the z direction (toward the z2 side). In the illustrated example, the lengths of the two first branch portions 12 in the y direction are different from each other. The first branch portion 12 located on the x1 side in the x direction has a longer length in the y direction than the first branch portion 12 located on the x2 side. The first branch portion 12 located on the x2 side in the x direction is located near a third electrode 73 and a wire 99, which will be described later.

[0100] The first extending portion 13 is a portion extending from the first main portion 11. The first extending portion 13 extends toward the x1 side from the end portion of the first main portion 11 on the x1 side in the x direction. The first extending portion 13 has a first end face 131. The first end face 131 is a surface facing the opposite side to the first main portion 11 in the x direction, in other words, a surface facing the x1 side, which is the outer side in the x direction. The illustrated first end face 131 is a surface perpendicular to the x direction. The position in the x direction of the first end face 131 is the same as the position in the x direction of the multiple end faces 631 located on the x1 side in the x direction.

[0101] The third extending portion 14 is a portion extending from the first main portion 11. The third extending portion 14 extends toward the x2 side from the end portion of the first main portion 11 on the x2 side in the x direction. The third extending portion 14 has a third end face 141. The third end face 141 is a surface facing the opposite side to the first main portion 11 in the x direction; in other words, it is a surface facing the x2 side, which is the outer side in the x direction. The illustrated third end face 141 is a surface perpendicular to the x direction. Furthermore, the position of the third end face 141 in the x direction is the same as the position in the x direction of the multiple end faces 631 located on the x2 side in the x direction.

[0102] The first connecting portion 15 is connected to an end portion of the first main portion 11 on the y1 side in the y direction, opposite the first branch portion 12. The first connecting portion 15 extends from the first main portion 11 to the z2 side in the z direction. The shape of the first connecting portion 15 is not limited in any way, and in the example shown, it is rectangular with the x direction as the longitudinal direction. In the example shown, the center of the first connecting portion 15 in the x direction is the same as the center of the first main portion 11 in the x direction.

[0103] 51 and 52, the tip of the first connection portion 15 of the first lead 1 on the z2 side in the z direction is conductively joined to the third lead 3 via a fourth conductive joint portion 94. The fourth conductive joint portion 94 is, for example, solder, an Ag paste material, an Ag sintered material, a Cu sintered material, or the like.

[0104] [2nd Lead 2] 42, 49, and 52, the second lead 2 is arranged on the z1 side in the z direction relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The second lead 2 is also arranged on the y2 side in the y direction relative to the first lead 1. As shown in FIGS. 40 to 42, 44, 46, 47, 49, and 52, the second lead 2 of this embodiment has a second main portion 21, a plurality of second branch portions 22, a second extending portion 23, a fourth extending portion 24, a second connecting portion 25, and a linking portion 29.

[0105] The second main portion 21 is a plate-like portion along the xy plane, and in the illustrated example, has a substantially rectangular shape with the x direction as the longitudinal direction. The first main portion 11 and the second main portion 21 are disposed on opposite sides of each other in the y direction with the semiconductor element 7 as the reference. In the illustrated example, the second main portion 21 has a through hole 211. The through hole 211 penetrates the second main portion 21 in the z direction. The number of through holes 211 is not limited and may be one or more. In the illustrated example, the second main portion 21 has two through holes 211. The shape of the through holes 211 is not limited and may be a circle, an ellipse, a rectangle, a polygon, or the like, as appropriate. In the illustrated example, the through hole 211 has an elliptical shape with the x direction as the longitudinal direction when viewed along the z direction. In this embodiment, the second main portion 21 is disposed at the same position as the first main portion 11 in the z direction.

[0106] The multiple second branch portions 22 extend from the second main portion 21 toward the y1 side in the y direction. The number of second branch portions 22 is not limited in any way, and in the example shown, two second branch portions 22 are provided. The multiple second branch portions 22 are arranged side by side in the x direction. The multiple first branch portions 12 and the multiple second branch portions 22 are arranged alternately in the x direction. The second branch portion 22 has a tip portion 221 and a root portion 222. The tip portion 221 is a portion located on the y1 side in the y direction relative to the second main portion 21. The tip portion 221 is located on the z2 side of the second main portion 21 in the z direction. The tip portion 221 is located at the same position as the tip portion 121 in the z direction. The shape of the tip portion 221 is not limited in any way, and in the example shown, it is rectangular with the y direction as the longitudinal direction when viewed along the z direction. The tip portion 221 is perpendicular to the z direction. 52, the end of tip portion 221 on the y1 side in the y direction is thinner than other portions, but tip portion 221 may have a uniform thickness. Root portion 222 is located between tip portion 221 and second main portion 21 and is connected to tip portion 221 and second main portion 21. Root portion 222 is inclined so that it approaches semiconductor element 7 in the z direction (is located on the z2 side) as it moves from second main portion 21 toward tip portion 221 in the y direction (as it moves from the y2 side toward the y1 side). In the illustrated example, the dimensions of the multiple second branch portions 22 in the x and y directions are the same.

[0107] The second extending portion 23 is a portion extending from the second main portion 21. The second extending portion 23 extends toward the x1 side from the end portion of the second main portion 21 on the x1 side in the x direction. The second extending portion 23 has a second end face 231. The second end face 231 is a surface facing the opposite side to the second main portion 21 in the x direction; in other words, it is a surface facing the x1 side, which is the outer side in the x direction. The illustrated second end face 231 is a surface perpendicular to the x direction. The position of the second end face 231 in the x direction is the same as that of the first end face 131 and the end face 631 located on the x1 side in the x direction.

[0108] The fourth extending portion 24 is connected to the second main portion 21 via a connecting portion 29. The dimension of the connecting portion 29 in the y direction is smaller than those of the second main portion 21 and the fourth extending portion 24. As such, the fourth extending portion 24 in the present disclosure is not limited to a configuration in which it is directly connected to the second main portion 21, but also includes a configuration in which it is connected to the second main portion 21 via another portion. This also applies to the second extending portion 23. Furthermore, the first extending portion 13 and the third extending portion 14 described above are not limited to a configuration in which they are directly connected to the first main portion 11, but also include a configuration in which they are connected to the first main portion 11 via another portion. The fourth extending portion 24 extends along the y direction. The fourth extending portion 24 has a fourth end surface 241. The fourth end surface 241 is a surface facing away from the second main portion 21 in the y direction; in other words, a surface facing the y2 side, which is outward in the y direction. The illustrated fourth end surface 241 is a surface perpendicular to the y direction.

[0109] The second connecting portion 25 is connected to an end portion of the second main portion 21 on the y2 side in the y direction, opposite to the second branch portion 22. The second connecting portion 25 extends from the second main portion 21 to the z2 side in the z direction. The shape of the second connecting portion 25 is not limited in any way, and in the example shown, it is rectangular with the x direction as the longitudinal direction. In the example shown, the center of the second connecting portion 25 in the x direction is the same as the center of the second main portion 21 in the x direction.

[0110] 52, the tip of the second connection portion 25 of the second lead 2 on the z2 side in the z direction is conductively joined to the fourth lead 4 via a fifth conductive joint portion 95. The fifth conductive joint portion 95 is, for example, solder.

[0111] In this embodiment, as shown in FIG. 49 , the first main portion 11 of the first lead 1 has a first edge 112 and a first recessed edge 113. The first edge 112 faces the second main portion 21. In the illustrated example, the first edge 112 extends along the x direction when viewed in the z direction. Each first branch portion 12 extends from the first edge 112 along the y direction. The first recessed edge 113 is recessed from the first edge 112. The first recessed edge 113 is recessed in the extension direction of the second branch portion 22 when viewed in the z direction (the y direction in this embodiment). The first recessed edge 113 is formed in a portion of the first edge 112 facing each second branch portion 22 when viewed in the z direction. In the illustrated example, the first main portion 11 has two first recessed edge portions 113. In the present embodiment, one of the two first recessed edge portions 113 is formed between the two first branch portions 12 in the x direction, and the other of the two first recessed edge portions 113 is formed at the end of the first edge 112 on the x1 side in the x direction. Some of the first recessed edge portions 113 (one in the present embodiment) are formed between the two first branch portions 12 in the x direction. In the illustrated example, the first edge 112 overlaps the semiconductor element 7 when viewed in the z direction, and the first recessed edge portion 113 does not overlap the semiconductor element 7 when viewed in the z direction. Each first recessed edge portion 113 is the edge of a notch formed in the first main portion 11. Each first recessed edge portion 113 has a side extending parallel to the first edge 112 and a side extending along the y direction. Unlike the example shown in FIG. 49 , each first recessed edge portion 113 may be a curved recess or a trapezoidal recess when viewed in the z direction.

[0112] In this embodiment, as shown in FIG. 49 , the second main portion 21 of the second lead 2 has a second edge 212 and a second recessed edge 213. The second edge 212 faces the first main portion 11. In the illustrated example, the second edge 212 extends along the x direction when viewed in the z direction. Each second branch portion 22 extends from the second edge 212 along the y direction. The second recessed edge 213 is recessed from the second edge 212. The second recessed edge 213 is recessed in the extension direction of the first branch portion 12 when viewed in the z direction (the y direction in this embodiment). The second recessed edge 213 is formed in a portion of the second edge 212 facing the first branch portion 12 when viewed in the z direction. In the illustrated example, the second main portion 21 has one second recessed edge 213. In the present embodiment, the second recessed edge portion 213 is formed between the two second branch portions 22 in the x direction. In the illustrated example, the second end edge 212 overlaps the semiconductor element 7 when viewed in the z direction, and the second recessed edge portion 213 does not overlap the semiconductor element 7. The second recessed edge portion 213 is the edge of a notch formed in the second main portion 21. When viewed in the z direction, the second recessed edge portion 213 has a side that extends parallel to the second end edge 212 and a side that extends along the y direction. Unlike the example shown in FIG. 49 , the second recessed edge portion 213 may be a curved recess or a trapezoidal recess when viewed in the z direction.

[0113] [3rd Lead 3] 50 to 52, the third lead 3 is arranged at a distance on the y1 side in the y direction from the island lead 6. The center of the third lead 3 in the x direction is at approximately the same position in the x direction as the center of the island lead 6 in the x direction. As shown in FIGS. 42, 43, 45, 46, and 49 to 52, the third lead 3 has a main surface 301, a back surface 302, a thick portion 31, a thin portion 32, and a plurality of extending portions 33.

[0114] The main surface 301 is a surface facing the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The third lead 3 may have, for example, a recess or groove recessed from the main surface 301 as appropriate. The first connection portion 15 described above is joined to the main surface 301 via a fourth conductive joint portion 94. The back surface 302 is a surface facing the z2 side in the z direction, facing the opposite side to the main surface 301. In the illustrated example, the back surface 302 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 302 as appropriate. In this embodiment, the main surface 301 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 302 is located at approximately the same position as the back surface 602.

[0115] The thick portion 31 is a portion where the main surface 301 and the back surface 302 overlap when viewed in the z direction. In the illustrated example, the thick portion 31 is a rectangular portion with the x direction as the longitudinal direction when viewed in the z direction. The shape of the thick portion 31 is not limited in any way. The thickness of the thick portion 31 in the z direction is the distance between the main surface 301 and the back surface 302. The thin portion 32 is a portion that overlaps the main surface 301 when viewed in the z direction but does not overlap the back surface 302 when viewed in the z direction. In the illustrated example, the thin portion 32 is connected to the thick portion 31 when viewed in the z direction so as to extend to both sides in the x direction and to the y2 side in the y direction. Furthermore, the thin portion 32 has a portion that is connected to the thick portion 31 when viewed in the z direction so as to extend to the y1 side in the y direction, and this portion is sandwiched between the extending portions 33 in the x direction. The thickness of the thin portion 32 in the z direction is smaller than the distance between the main surface 301 and the back surface 302. There are no limitations on the thickness of the thick portion 31 and the thin portion 32. In this embodiment, the thickness of the thick portion 31 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 32 is approximately the same as the thickness of the thin portion 62.

[0116] The multiple extending portions 33 are portions extending from the end of the thick portion 31. In the illustrated example, the multiple extending portions 33 extend from the thick portion 31 toward the y1 side in the y direction. There is no limitation on the number of extending portions 33, and there may be multiple extending portions 33 or just one extending portion. In the illustrated example, four extending portions 33 are provided. The extending portion 33 has an end face 331. The end face 331 is a surface facing the opposite side to the thick portion 31 in the y direction, in other words, a surface facing the y1 side, which is the outside in the y direction. The illustrated end face 331 is a surface perpendicular to the y direction. The multiple end faces 331 are located at the same position in the y direction.

[0117] [4th lead 4] 42, 49, 50, and 52, the fourth lead 4 is disposed on the y2 side in the y direction with respect to the island lead 6. The center of the fourth lead 4 in the x direction is located on the x1 side in the x direction with respect to the center of the island lead 6 in the x direction. In the semiconductor device B1, as shown in FIG. 50, the fourth lead 4 and the island lead 6 are connected by a relay portion 49. Alternatively, the fourth lead 4 may be separated from the island lead 6. As shown in FIGS. 40 to 45, 49, 50, and 52, the fourth lead 4 has a main surface 401, a back surface 402, a thick portion 41, a thin portion 42, and a plurality of extending portions 43.

[0118] The main surface 401 is a surface facing the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The fourth lead 4 may have, for example, a recess or groove recessed from the main surface 401 as appropriate. The second connection portion 25 described above is joined to the main surface 401 via a fifth conductive joint portion 95. The back surface 402 is a surface facing the z2 side in the z direction, facing the opposite side to the main surface 401. In the illustrated example, the back surface 402 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 402 as appropriate. In this embodiment, the main surface 401 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 402 is located at approximately the same position as the back surface 602.

[0119] The thick portion 41 is a portion where the main surface 401 and the back surface 402 overlap when viewed in the z direction. In the illustrated example, the thick portion 41 is a rectangular portion with the longitudinal direction in the x direction when viewed in the z direction. The shape of the thick portion 41 is not limited in any way. The thickness of the thick portion 41 in the z direction is the distance between the main surface 401 and the back surface 402. In this embodiment, the dimension of the thick portion 41 in the x direction is smaller than the dimension of the thick portion 31 in the x direction. The thin portion 42 is a portion that overlaps with the main surface 401 when viewed in the z direction but does not overlap with the back surface 402. In the illustrated example, the thin portion 42 is connected to the thick portion 41 when viewed in the z direction so as to extend on both sides in the x direction and to the y1 side in the y direction. Furthermore, the thin portion 42 has a portion that is connected to the thick portion 41 so as to extend to the y2 side in the y direction when viewed in the z direction, and this portion is sandwiched between the extending portions 43 in the x direction. The thickness of the thin portion 42 in the z direction is smaller than the distance between the main surface 401 and the back surface 402. The thicknesses of the thick portion 41 and the thin portion 42 are not limited in any way. In this embodiment, the thickness of the thick portion 41 is approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 42 is approximately the same as the thickness of the thin portion 62.

[0120] The multiple extending portions 43 are portions extending from the end of the thick portion 41. In the illustrated example, the multiple extending portions 43 extend from the thick portion 41 toward the y2 side in the y direction. The number of extending portions 43 is not limited and may be multiple or may be one. In the illustrated example, three extending portions 43 are provided. The positions in the x direction of these three extending portions 43 are approximately the same as the positions in the x direction of the three extending portions 33 among the multiple extending portions 33 that are located on the x1 side in the x direction. The extending portion 43 has an end face 431. The end face 431 is a surface that faces the opposite side from the thick portion 41 in the y direction, in other words, a surface that faces the y2 side, which is outward in the y direction. The illustrated end face 431 is a surface perpendicular to the y direction. The positions in the y direction of the multiple end faces 431 are the same. The positions of the multiple end faces 431 in the y direction are the same as those of the fourth end face 241.

[0121] [5th ​​Lead 5] As shown in Figures 42, 43, 45, and 49 to 51, the fifth lead 5 is arranged on the y2 side in the y direction with respect to the island lead 6. The center of the fifth lead 5 in the x direction is located on the x2 side in the x direction with respect to the center of the island lead 6 in the x direction. The fifth lead 5 is arranged on the x2 side in the x direction with respect to the fourth lead 4. As shown in Figures 40 to 45, and 49 to 51, the fifth lead 5 has a main surface 501, a back surface 502, a thick portion 51, a thin portion 52, and an extending portion 53.

[0122] The main surface 501 is a surface facing the z1 side in the z direction, and in the illustrated example, is a smooth surface perpendicular to the z direction. The fifth lead 5 may have, for example, a recess or groove recessed from the main surface 501 as appropriate. A wire 99 is bonded to the main surface 501. The back surface 502 is a surface facing the z2 side in the z direction, and is facing the opposite side to the main surface 501. In the illustrated example, the back surface 502 is a smooth surface perpendicular to the z direction. A plating layer made of Ni, Ti, or the like may be provided on the back surface 502 as appropriate. In this embodiment, the main surface 501 is located at approximately the same position as the main surface 601 in the z direction, and the back surface 502 is located at approximately the same position as the back surface 602.

[0123] The thick portion 51 is a portion where the main surface 501 and the back surface 502 overlap when viewed in the z direction. In the illustrated example, the thick portion 51 is a rectangular portion when viewed in the z direction. The shape of the thick portion 51 is not limited in any way. The thickness of the thick portion 51 in the z direction is the distance between the main surface 501 and the back surface 502. In this embodiment, the dimension of the thick portion 51 in the x direction is smaller than the dimensions of the thick portions 31 and 41 in the x direction. The thin portion 32 is a portion that overlaps with the main surface 301 when viewed in the z direction but does not overlap with the back surface 302. In the illustrated example, the thin portion 32 is connected to the thick portion 51 so as to extend on both sides in the x direction and to the y1 side in the y direction when viewed in the z direction. The thickness of the thin portion 52 in the z direction is smaller than the distance between the main surface 501 and the back surface 502. The thickness of the thick portion 51 and the thin portion 52 are not limited in any way. In this embodiment, the thickness of the thick portion 51 is approximately the same as the thickness of the thick portion 61 , and the thickness of the thin portion 52 is approximately the same as the thickness of the thin portion 62 .

[0124] The extending portion 53 is a portion extending from an end of the thick portion 51. In the illustrated example, the extending portion 53 extends from the thick portion 51 toward the y2 side in the y direction. The number of extending portions 53 is not limited and may be multiple or may be one. In the illustrated example, one extending portion 53 is provided. The position of the extending portion 53 in the x direction is approximately the same as the position in the x direction of the extending portion 33 among the multiple extending portions 33 that is located closest to the x2 side in the x direction. The extending portion 53 has an end face 531. The end face 531 is a surface facing away from the thick portion 51 in the y direction; in other words, it is a surface facing the y2 side, which is the outer side in the y direction. The illustrated end face 531 is a surface perpendicular to the y direction. The position of the end face 531 in the y direction is the same as that of the fourth end face 241 and the multiple end faces 431.

[0125] [Semiconductor element 7] The semiconductor element 7 is a component that performs the electrical functions of the semiconductor device B1. The specific configuration of the semiconductor element 7 is not limited. In this embodiment, the semiconductor element 7 is a transistor using a nitride semiconductor, more specifically, a GaN HEMT. The semiconductor element 7 is not limited to a nitride semiconductor, and other semiconductors such as silicon (Si) and silicon carbide (SiC) may be used. Furthermore, the semiconductor element 7 is not limited to a HEMT, and may be other transistors such as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 7 is mounted on the thick portion 61 of the island lead 6. As shown in FIGS. 42, 49, and 51 to 53, the semiconductor element 7 has an element body 70, a first electrode 71, a second electrode 72, and a third electrode 73.

[0126] The element body 70 is, for example, a portion in which a substrate layer, a buffer layer, and a nitride layer (all not shown) are stacked. The element body 70 has an element main surface 701 and an element back surface 702. The element main surface 701 faces the z1 side in the z direction. The element back surface 702 faces the z2 side in the z direction, facing the opposite side to the element main surface 701. In the illustrated example, a metal layer is provided on the element back surface 702. As shown in FIGS. 51 to 53 , this metal layer and the main surface 601 of the island lead 6 are joined by a first conductive joint 91. The first conductive joint 91 is, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, or the like. The above-mentioned metal layer is provided for joining by the first conductive joint 91, but the metal layer may not be provided. Alternatively, the metal layer may be at the same potential as the second electrode 72, for example. In the illustrated example, the semiconductor element 7 is disposed at a position overlapping a part of the thick portion 61 and a part of the thin portion 62 of the island lead 6 when viewed in the z direction.

[0127] The first electrode 71, the second electrode 72, and the third electrode 73 are arranged on the element principal surface 701. In this embodiment, a plurality of first electrodes 71 and a plurality of second electrodes 72 are provided. The number of the first electrodes 71 and the second electrodes 72 is not limited in any way. In the illustrated example, two first electrodes 71 and two second electrodes 72 are provided. The number of the first electrodes 71 is the same as the number of the first branch portions 12, and the number of the second electrodes 72 is the same as the number of the second branch portions 22. The first electrode 71 is an electrode that functions as a drain electrode. The second electrode 72 is an electrode that functions as a source electrode. The plurality of first electrodes 71 and the plurality of second electrodes 72 are arranged alternately in the x direction. The shapes of the first electrodes 71 and the second electrodes 72 are not limited in any way, and in the illustrated example, they are rectangular with the y direction as the longitudinal direction.

[0128] 51 and 53, tip ends 121 of the multiple first branch portions 12 of the first lead 1 are conductively joined to the multiple first electrodes 71 via second conductive joints 92. The second conductive joints 92 are, for example, solder, Ag paste, Ag sintered material, Cu sintered material, etc. As shown in FIGS. 52 and 53, tip ends 221 of the multiple second branch portions 22 of the second lead 2 are conductively joined to the multiple second electrodes 72 via third conductive joints 93. The third conductive joints 93 are, for example, solder, Ag paste, Ag sintered material, Cu sintered material, etc.

[0129] The third electrode 73 functions as a gate electrode. The number of third electrodes 73 is not limited and may be one or more. In the illustrated example, one third electrode 73 is provided. The third electrode 73 is disposed, for example, at one of the four corners of the element principal surface 701. In the illustrated example, the third electrode 73 is disposed near a corner of the element principal surface 701 that is on the x2 side in the x direction and the y2 side in the y direction. The third electrode 73 is disposed on the y2 side in the y direction relative to the first electrode 71 that is on the x2 side in the x direction, out of the two first electrodes 71. A wire 99 is joined to the third electrode 73, and the third electrode 73 is electrically connected to the fifth lead 5 via the wire 99. Note that instead of the wire 99, a conductive member made of a metal plate material may be used to electrically connect the third electrode 73 and the fifth lead 5.

[0130] [Sealing resin 8] The sealing resin 8 covers a portion of each of the leads 1 to 6, the semiconductor element 7, and the wires 99, and is made of an insulating material such as epoxy resin. As shown in Figures 40, 41, and 44 to 53, the sealing resin 8 has a first surface 81, a second surface 82, a third surface 83, a fourth surface 84, a fifth surface 85, and a sixth surface 86, and is shaped like a rectangular parallelepiped.

[0131] The first surface 81 is a surface facing the z1 side in the z direction. In the illustrated example, the first surface 81 is a plane perpendicular to the z direction. The second surface 82 is a surface facing the z2 side in the z direction. In the illustrated example, the second surface 82 is a plane perpendicular to the z direction. The third surface 83 is a surface facing the y1 side in the y direction. In the illustrated example, the third surface 83 is a plane perpendicular to the y direction. The fourth surface 84 is a surface facing the y2 side in the y direction. In the illustrated example, the fourth surface 84 is a plane perpendicular to the y direction. The fifth surface 85 is a surface facing the x1 side in the x direction. In the illustrated example, the fifth surface 85 is a plane perpendicular to the x direction. The sixth surface 86 is a surface facing the x2 side in the x direction. In the illustrated example, the sixth surface 86 is a plane perpendicular to the x direction.

[0132] 45 , a back surface 602 of the island lead 6, a back surface 302 of the third lead 3, a back surface 402 of the fourth lead 4, and a back surface 502 of the fifth lead 5 are exposed on the z2 side in the z direction from the second surface 82. The second surface 82, the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 are flush with one another. However, all or any of the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 may protrude slightly from the second surface 82.

[0133] 46, 49, and 50, multiple end faces 331 of the third lead 3 are exposed on the y1 side in the y direction from the third surface 83. The third surface 83 and the multiple end faces 331 of the third lead 3 are flush with each other. However, all or any of the multiple end faces 331 may slightly protrude from the third surface 83.

[0134] 44, 49, and 50, the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 are exposed on the y2 side in the y direction from the fourth surface 84. The fourth surface 84, the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 are flush with one another. However, all or any of the fourth end face 241 of the second lead 2, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 may protrude slightly from the fourth surface 84.

[0135] 47, 49, and 50, the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 are exposed on the x1 side in the x direction from the fifth surface 85. The fifth surface 85, the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 are flush with one another. However, all or any of the first end face 131 of the first lead 1, the second end face 231 of the second lead 2, and the multiple end faces 631 of the island lead 6 may protrude slightly from the fifth surface 85.

[0136] 48, 49, and 50, the third end face 141 of the first lead 1 and the multiple end faces 631 of the island lead 6 are exposed on the x2 side in the x direction from the sixth surface 86. The sixth surface 86, the third end face 141 of the first lead 1, and the multiple end faces 631 of the island lead 6 are flush with one another. However, all or any of the third end face 141 of the first lead 1 and the multiple end faces 631 of the island lead 6 may protrude slightly from the sixth surface 86.

[0137] Next, an example of a method for manufacturing the semiconductor device B1 will be described below with reference to FIGS.

[0138] As shown in FIG. 54, the manufacturing method of this embodiment includes a first preparation step S11, a second preparation step S12, a mounting step S13, a third preparation step S14, an arrangement step S15, a curing step S16, a connection step S17, a resin formation step S18, and a cutting step S19.

[0139] [First preparation step S11] First, a first lead frame LF1 shown in Fig. 55 is prepared. The first lead frame LF1 includes a frame portion f1, a third portion 30, a fourth portion 40, a fifth portion 50, and an island portion 60. The frame portion f1 is a frame-shaped portion that surrounds the third portion 30, the fourth portion 40, the fifth portion 50, and the island portion 60 in the x and y directions.

[0140] The third portion 30 corresponds to the thick portion 31 and the thin portion 32 of the third lead 3 of the semiconductor device B1 described above. The third portion 30 is connected to the frame portion f1 by a plurality of connecting portions 330. The fourth portion 40 corresponds to the thick portion 41 and the thin portion 42 of the fourth lead 4 of the semiconductor device B1 described above. The fourth portion 40 is connected to the frame portion f1 by a plurality of connecting portions 430. The fifth portion 50 corresponds to the thick portion 51 and the thin portion 52 of the fifth lead 5 of the semiconductor device B1 described above. The fifth portion 50 is connected to the frame portion f1 by a connecting portion 530. The island portion 60 corresponds to the thick portion 61 and the thin portion 62 of the semiconductor device B1 described above. The island portion 60 is connected to the frame portion f1 by a plurality of connecting portions 630. In the first lead frame LF1, the main surface 301, the main surface 401, the main surface 501, and the main surface 601 are flush with one another. In addition, the rear surface 302, the rear surface 402, the rear surface 502, and the rear surface 602 are flush with one another.

[0141] [Second preparation step S12] Next, the semiconductor element 7 shown in Fig. 55 is prepared. The semiconductor element 7 has the configuration described above in connection with the semiconductor device B1. Note that the order of the first preparation step S11 and the second preparation step S12 is not limited in any way.

[0142] [Mounting process S13] 56, the semiconductor element 7 is mounted on the island portion 60. In the mounting step S13, a first conductive paste 910 is interposed between the element rear surface 702 of the semiconductor element 7 and the main surface 601 of the island portion 60. The first conductive paste 910 is, for example, a solder paste.

[0143] [Third preparation step S14] 57 to 59, a second lead frame LF2 is prepared. The second lead frame LF2 includes a frame portion f2, a first portion 10, and a second portion 20. The frame portion f2 is a frame-shaped portion that surrounds the first portion 10 and the second portion 20. As shown in FIG. 54, the third preparation step S14 includes a first process S141 and a second process S142.

[0144] In the first process S141, first, a metal flat plate is prepared. Then, the prepared flat plate is punched to form the second lead frame LF2 shown in FIG. 57. In the first process S141, a notch is formed in the first edge 112 of the first main portion 11 (the edge closer to the second main portion 21 in the y direction), thereby forming a first recessed edge portion 113 in the first edge 112 of the first main portion 11. Similarly, in the first process S141, a notch is formed in the second edge 212 of the second main portion 21 (the edge closer to the first main portion 11 in the y direction), thereby forming a second recessed edge portion 213 in the second edge 212 of the second main portion 21.

[0145] In the second lead frame LF2 after the first process S141, each of the first branch portions 12 and each of the second branch portions 22 is not bent and extends along the xy plane. As shown in FIG. 57 , one of the two first branch portions 12 (the one sandwiched between the two second branch portions 22) extends from the first edge 112 to a notch (first recessed edge portion 113) formed in the second main portion 21. Similarly, the two second branch portions 22 extend from the second edge 212 to a notch (second recessed edge portion 213) formed in the first main portion 11. In the second lead frame LF2 after the first process S141, the first connecting portion 15 extends from the first main portion 11 to the y1 side in the y direction, and the second connecting portion 25 extends from the second main portion 21 to the y2 side in the y direction.

[0146] In the second process S142, the second lead frame LF2 (the second lead frame LF2 shown in FIG. 57) after the first process S141 is bent to form the second lead frame LF2 shown in FIGS. 58 and 59. In the second process S142, for example, the second lead frame LF2 is bent toward the z2 side in the z direction along the bending line shown by the dashed line in FIG. 57. By the second process S142, the first branch portions 12, the first connecting portion 15, the second branch portions 22, and the second connecting portion 25 have the configuration described in the semiconductor device B1 above. Therefore, in the first portion 10, the tip portion 121 of each first branch portion 12 is positioned closer to the z2 side than the first main portion 11 in the z direction. In the first portion 10, the first connecting portion 15 extends from the first main portion 11 toward the z2 side in the z direction. In the second portion 20, the tip portion 221 of each second branch portion 22 is disposed on the z2 side in the z direction relative to the second main portion 21. In the second portion 20, the second connection portion 25 extends from the second main portion 21 to the z2 side in the z direction.

[0147] [Placement process S15] Next, as shown in FIGS. 60 to 62, the second lead frame LF2 is arranged. FIG. 61 is a cross-sectional view in the yz plane intersecting the first branch portion 12, and FIG. 62 is a cross-sectional view in the yz plane intersecting the second branch portion 22. In the arrangement step S15, a second conductive paste 920 is interposed between the tip portions 121 of the first branch portions 12 of the first portion 10 and the first electrodes 71 of the semiconductor element 7. A third conductive paste 930 is interposed between the tip portions 221 of the second branch portions 22 of the second portion 20 and the second electrodes 72 of the semiconductor element 7. The second conductive paste 920 and the third conductive paste 930 are, for example, solder paste. In the arrangement step S15, a fourth conductive paste 940 is interposed between the tip of the first connection portion 15 of the first portion 10 on the z2 side in the z direction and the main surface 301 of the third portion 30. Furthermore, a fifth conductive paste 950 is interposed between the tip of the second connection portion 25 of the second portion 20 on the z2 side in the z direction and the main surface 401 of the fourth portion 40. The fourth conductive paste 940 and the fifth conductive paste 950 are, for example, solder paste.

[0148] [Curing process S16] Next, the first conductive paste 910, the second conductive paste 920, the third conductive paste 930, the fourth conductive paste 940, and the fifth conductive paste 950 are cured. This curing is performed, for example, by heating the first lead frame LF1, the second lead frame LF2, and the semiconductor element 7, which have undergone the placement step S15, to a predetermined temperature in a reflow furnace and then cooling them. As a result, the first conductive paste 910, the second conductive paste 920, the third conductive paste 930, the fourth conductive paste 940, and the fifth conductive paste 950 harden, respectively, to become the first conductive joints 91, the second conductive joints 92, the third conductive joints 93, the fourth conductive joints 94, and the fifth conductive joints 95 described in the semiconductor device B1. Then, the first lead frame LF1, the second lead frame LF2, and the semiconductor element 7 are electrically connected to one another at various locations. In this embodiment, in the curing step S16, the first conductive paste 910, the second conductive paste 920, the third conductive paste 930, the fourth conductive paste 940 and the fifth conductive paste 950 are cured all at once, but instead of this process, only the first conductive paste 910 may be cured first after the semiconductor element 7 is mounted.

[0149] [Connection step S17] 63, the wire 99 is joined to the third electrode 73 and the main surface 501 of the fifth lead 5, thereby electrically connecting the third electrode 73 and the fifth lead 5 with the wire 99. When a conductive member made of a metal plate material is used instead of the wire 99, the third electrode 73 and the main surface 501 are electrically joined with the conductive member.

[0150] [Resin formation process S18] 64, each of a portion of the first lead frame LF1 and a portion of the second lead frame LF2, the semiconductor element 7, and the wires 99 are sealed with sealing resin 8. The resin forming step S18 is performed by, for example, molding.

[0151] [Cutting process S19] Next, the first connecting portion 130, the third connecting portion 140, the second connecting portion 230, the fourth connecting portion 240, the plurality of connecting portions 330, the plurality of connecting portions 430, the connecting portion 530, and the plurality of connecting portions 630 are cut along the sealing resin 8. As a result, the portions of the first connecting portion 130, the third connecting portion 140, the second connecting portion 230, the fourth connecting portion 240, the plurality of connecting portions 330, the plurality of connecting portions 430, the connecting portion 530, and the plurality of connecting portions 630 that remain in the sealing resin 8 become the above-mentioned first extending portion 13, the third extending portion 14, the second extending portion 23, the fourth extending portion 24, the plurality of extending portions 33, the plurality of extending portions 43, the extending portion 53, and the plurality of extending portions 63. The cut surfaces at this time become first end face 131, third end face 141, second end face 231, fourth end face 241, multiple end faces 331, multiple end faces 431, end face 531, and multiple end faces 631, respectively.

[0152] Through the above steps, the semiconductor device B1 is manufactured.

[0153] Next, the functions and effects of the semiconductor device B1 and the method for manufacturing the semiconductor device B1 will be described.

[0154] In the manufacturing method of the semiconductor device B1, as shown in FIGS. 58 and 59, in the second lead frame LF2, the first portion 10 is connected to the frame portion f2 via the first connecting portion 130, and the second portion 20 is connected to the frame portion f2 via the second connecting portion 230. Therefore, even if the first conductive paste 910, the second conductive paste 920, and the third conductive paste 930 are in a molten state in the arrangement step S15 and the subsequent hardening step S16 shown in FIG. 60, it is possible to prevent the first portion 10 and the second portion 20 from being incorrectly misaligned. Therefore, according to this embodiment, the first lead 1 (first portion 10) and the second lead 2 (second portion 20), which are conductive members, can be more accurately arranged.

[0155] In the semiconductor device B1, the first main portion 11 has a first recessed edge 113 recessed from the first edge 112. The first recessed edge 113 is formed, for example, in a first step S141 of the third preparation step S14. In the second lead frame LF2 after the first step S141, the second branch portion 22 extends to the recess formed by the first recessed edge 113. This configuration allows the length (y-direction dimension) of the second branch portion 22 to be longer than in a configuration in which the first recessed edge 113 is not formed. This increases the bonding area between the tip portion 221 and the second electrode 72. Therefore, this embodiment improves electrical continuity between the second lead 2 and the second electrode 72. Furthermore, in the manufacturing method of the semiconductor device B1, in the resin forming step S18, the resin flows downward into the first main portion 11 through the recess formed by the first recessed edge 113. This improves the flow of resin into the area covered by the first main portion 11. Therefore, according to this embodiment, a path for the resin to flow below the first main portion 11 is ensured, and it is possible to prevent the occurrence of an area where the sealing resin 8 is not formed, that is, a void.

[0156] In the semiconductor device B1, the second main portion 21 has a second recessed edge 213 recessed from the second edge 212. The second recessed edge 213 is formed, for example, in a first step S141 of the third preparation step S14. In the second lead frame LF2 after the first step S141, the first branch portion 12 extends to the recess formed by the second recessed edge 213. This configuration allows the length (y-direction dimension) of the first branch portion 12 to be longer than in a configuration in which the second recessed edge 213 is not formed. This increases the bonding area between the tip portion 121 and the first electrode 71. Therefore, this embodiment improves electrical continuity between the first lead 1 and the first electrode 71. Furthermore, in the manufacturing method of the semiconductor device B1, in the resin forming step S18, resin flows downward into the second main portion 21 through the recess formed by the second recessed edge 213. This improves the flow of resin into the area covered by the second main portion 21. Therefore, according to this embodiment, a path for the resin to flow below the second main portion 21 can be secured, and the occurrence of an area where the sealing resin 8 is not formed, that is, a void, can be suppressed.

[0157] In the semiconductor device B1, the first main portion 11 has a first edge 112 and a first recessed edge 113. Each of the first branch portions 12 extends from the first edge 112. This configuration ensures the length of each of the second branch portions 22 while preventing the area of ​​the first main portion 11 from being reduced. Similarly, the second main portion 21 has a second edge 212 and a second recessed edge 213. Each of the second branch portions 22 extends from the second edge 212. This configuration ensures the length of each of the first branch portions 12 while preventing the area of ​​the second main portion 21 from being reduced. In the placement step S15, when the second lead frame LF2 is moved onto the first lead frame LF1, the first main portion 11 and the second main portion 21 of the second lead frame LF2 may be transported while being sucked. In this transport method, the larger the area of ​​the portion to be sucked, the more stable the transport. Therefore, according to this embodiment, reduction in the area of ​​each of the first main portion 11 and the second main portion 21 is suppressed, and therefore, the second lead frame LF2 can be stably transported in the placement step S15 and the like.

[0158] In semiconductor device B1, the plurality of first electrodes 71 and the plurality of second electrodes 72 are alternately arranged in the x direction, and accordingly, the plurality of first branch portions 12 and the plurality of second branch portions 22 are alternately arranged in the x direction. In such a configuration, the first portion 10 and the second portion 20 can be positioned more accurately, which is suitable for appropriately establishing conductive junctions between the first electrodes 71 and the first branch portions 12 and between the second electrodes 72 and the second branch portions 22, and can prevent, for example, the first branch portions 12 and the second branch portions 22 from becoming unduly close to each other.

[0159] The semiconductor device and the manufacturing method of the semiconductor device according to the present disclosure are not limited to the above-described embodiment. The specific configurations of the semiconductor device and the manufacturing method of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0160] Appendix A1. a first preparation step of preparing a first lead frame including an island portion; a second preparation step of preparing a semiconductor element having a main surface facing one side in a thickness direction and a back surface facing the other side, and at least one first electrode and at least one second electrode arranged on the main surface of the element; a mounting step of mounting the semiconductor element on the island portion so that a first conductive paste is interposed between the rear surface of the element and the island portion; a third preparation step of preparing a second lead frame including a first portion, a second portion, a frame portion, a first connecting portion connecting the first portion and the frame portion, and a second connecting portion connecting the second portion and the frame portion; a positioning step of positioning the second lead frame so that a second conductive paste is interposed between the first portion and the at least one first electrode, and a third conductive paste is interposed between the second portion and the at least one second electrode; a curing step of curing the first conductive paste, the second conductive paste, and the third conductive paste. Appendix A2. a sealing resin forming step of forming a sealing resin that covers the semiconductor element, the first portion, the second portion, a portion of the first connecting portion, and a portion of the second connecting portion after the curing step; The method for manufacturing a semiconductor device according to Appendix A1, further comprising: a cutting step of cutting the first connecting portion and the second connecting portion. Appendix A3. the at least one first electrode includes a plurality of first electrodes; the at least one second electrode includes a plurality of second electrodes; the plurality of first electrodes and the plurality of second electrodes are alternately arranged in a first direction perpendicular to the thickness direction, the first section has a first main portion and a plurality of first branch portions each connected to the first main portion, the second section has a second main portion and a plurality of second branch portions each connected to the second main portion, The method for manufacturing a semiconductor device according to Appendix A1 or Appendix A2, wherein in the placement process, a second conductive paste is interposed between each of the plurality of first branch portions and the plurality of first electrodes, and a third conductive paste is interposed between each of the plurality of second branch portions and the plurality of second electrodes. Appendix A4. A method for manufacturing a semiconductor device according to Appendix A3, wherein in a second direction perpendicular to the thickness direction and the first direction, the first main portion is located on one side and the second main portion is located on the other side of the first main portion. Appendix A5. the semiconductor element has a third electrode disposed on the element main surface, The method for manufacturing a semiconductor device according to Appendix A4, wherein the third electrode is located on the other side of the second direction relative to the plurality of first electrodes and on one side of the first direction relative to the plurality of second electrodes. Appendix A6. the second lead frame has a third connecting portion that connects the first portion and the frame portion, the first connecting portion extends from the first portion to the other side in the first direction, The method for manufacturing a semiconductor device according to Appendix A5, wherein the third connecting portion extends from the first portion to one side in the first direction. Appendix A7. the second lead frame has a fourth connecting portion that connects the second portion and the frame portion, the second connecting portion extends from the second portion to the other side in the first direction, The method for manufacturing a semiconductor device according to Appendix A6, wherein the fourth connecting portion extends from the second portion to the other side in the second direction. Appendix A8. the first lead frame includes a third portion and a fourth portion; the first portion has a first connection portion that is connected to the first main portion from one side in the second direction and extends to the other side in the thickness direction, the second portion has a second connection portion that is connected to the second main portion from the other side in the second direction and extends to the other side in the thickness direction, A method for manufacturing a semiconductor device according to any one of Appendix A5 to Appendix A7, wherein in the placing step, the second lead frame is placed so that a fourth conductive paste is interposed between the first connection portion and the third portion, and a fifth conductive paste is interposed between the second connection portion and the fourth portion. Appendix A9. The method for manufacturing a semiconductor device according to any one of Appendix A5 to Appendix A8, further comprising the step of joining a conductive member to the third electrode and the first lead frame after the curing step. Appendix A10. A method for manufacturing a semiconductor device according to Appendix A9, wherein the third electrode is arranged opposite the first electrode located furthest to the one side in the first direction among the plurality of first electrodes. Appendix A11. Multiple leads and A semiconductor element; a sealing resin that covers each of the plurality of leads and the semiconductor element, the plurality of leads include an island lead, a first lead, and a second lead spaced apart from one another; the semiconductor element has a main surface facing one side in a thickness direction and a back surface facing the other side, and at least one first electrode and at least one second electrode arranged on the main surface; the rear surface of the element and the island lead are joined by a first conductive joint, the first lead has a first main portion, at least one first branch portion, and a first extension portion; the second lead has a second main portion, at least one second branch portion, and a second extension portion; the at least one first branch portion and the at least one first electrode are joined by a second conductive joint, the at least one second branch portion and the at least one second electrode are respectively joined by a third conductive joint; the first extension portion has a first end surface exposed from the sealing resin, The second extension portion has a second end surface exposed from the sealing resin. Appendix A12. the at least one first electrode includes a plurality of first electrodes; the at least one second electrode includes a plurality of second electrodes; the plurality of first electrodes and the plurality of second electrodes are alternately arranged in a first direction perpendicular to the thickness direction, the at least one first branch includes a plurality of first branches; The semiconductor device according to Appendix A11, wherein the at least one second branch portion includes a plurality of second branch portions. Appendix A13. The semiconductor device described in Appendix A12, wherein in a second direction perpendicular to the thickness direction and the first direction, the first main portion is located on one side and the second main portion is located on the other side of the first main portion. Appendix A14. the semiconductor element has a third electrode disposed on the element main surface, The semiconductor device according to Appendix A13, wherein the third electrode is located on the other side in the second direction relative to the plurality of first electrodes and on the one side in the first direction relative to the plurality of second electrodes. Appendix A15. the first lead has a third extension portion, the first extending portion extends from the first main portion to the other side in the first direction, The semiconductor device according to Appendix A14, wherein the third extension portion extends from the first main portion to one side in the first direction. Appendix A16. the second lead has a fourth extension portion, the second extending portion extends from the second main portion to the other side in the first direction, The semiconductor device according to Appendix A15, wherein the fourth extension portion extends from the second main portion to the other side in the second direction. Appendix A17. the plurality of leads includes a third lead and a fourth lead; the first lead has a first connection portion connected to the first main portion from one side in the second direction and extending to the other side in the thickness direction, the second lead has a second connection portion connected to the second main portion from the other side in the second direction and extending to the other side in the thickness direction, the first connection portion and the third lead are joined by a fourth conductive joint portion, The semiconductor device according to any one of appendices A14 to A16, wherein the second connection portion and the fourth lead are joined by a fifth conductive joint portion. Appendix A18. Further comprising a conductive member, the plurality of leads includes a fifth lead; The semiconductor device according to any one of Appendix A14 to Appendix A17, wherein the conductive member is joined to the third electrode and the fifth lead. Appendix A19. The semiconductor device according to Appendix A18, wherein the third electrode is arranged opposite to the first electrode located furthest to the one side in the first direction among the plurality of first electrodes on the other side in the second direction. Appendix B1. a first preparation step of preparing a first lead frame including an island portion; a second preparation step of preparing a semiconductor element having a main surface facing one side in a thickness direction and a back surface facing the other side, and a first electrode and a second electrode disposed on the main surface; a mounting step of mounting the semiconductor element on the island portion so that a first conductive paste is interposed between the rear surface of the element and the island portion; a third preparation step of preparing a second lead frame including a first portion, a second portion, a frame portion, a first connecting portion connecting the first portion and the frame portion, and a second connecting portion connecting the second portion and the frame portion; a positioning step of positioning the second lead frame so that a second conductive paste is interposed between the first portion and the first electrode and a third conductive paste is interposed between the second portion and the second electrode; a curing step of curing the first conductive paste, the second conductive paste, and the third conductive paste; the first portion includes a first main portion and a first branch portion extending from the first main portion; the second portion includes a second main portion and a second branch portion extending from the second main portion toward the first main portion as viewed in the thickness direction, the third preparation step includes a process of forming a first recessed edge portion that is recessed in an extension direction of the second branch portion when viewed in the thickness direction, on a first end edge of the first main portion that faces the second main portion, A method for manufacturing a semiconductor device, wherein in the placing process, the second conductive paste is interposed between the first branch portion and the first electrode, and the third conductive paste is interposed between the second branch portion and the second electrode. Appendix B2. the first branch portion extends from the first main portion toward the second main portion when viewed in the thickness direction, The method for manufacturing a semiconductor device described in Appendix B1, wherein the third preparation step includes a process for forming a second recessed edge portion that is recessed in the extension direction of the first branch portion when viewed in the thickness direction on a second edge of the second main portion that faces the first main portion. Appendix B3. The method for manufacturing a semiconductor device described in Appendix B2, wherein the third preparation process includes a first process of punching the second lead frame from a metal flat plate, and a second process of bending a portion of the second lead frame after the first process. Appendix B4. The method for manufacturing a semiconductor device according to Appendix B3, wherein the first recessed edge portion and the second recessed edge portion are formed in the first treatment. Appendix B5. The method for manufacturing a semiconductor device according to either Appendix B3 or Appendix B4, wherein the first branch portion and the second branch portion are bent by the second process. Appendix B6. the first electrodes and the second electrodes are arranged in a first direction perpendicular to the thickness direction, the first main portion and the second main portion are disposed on opposite sides of the semiconductor element in the thickness direction and in a second direction perpendicular to the first direction, the first branch portion extends from the first main portion along the second direction when viewed in the thickness direction, The method for manufacturing a semiconductor device according to any one of Appendix B1 to Appendix B5, wherein the second branch portion extends from the second main portion along the second direction when viewed in the thickness direction. Appendix B7. the first lead frame includes a third portion and a fourth portion; the first portion has a first connection portion that is connected to the first main portion from a side opposite to the side to which the first branch portion is connected in the second direction and that extends to the other side in the thickness direction, the second portion has a second connection portion that is connected to the second main portion from a side opposite to the side to which the second branch portion is connected in the second direction and that extends to the other side in the thickness direction, The method for manufacturing a semiconductor device described in Appendix B6, wherein in the placing step, the second lead frame is placed so that a fourth conductive paste is interposed between the first connection portion and the third portion, and a fifth conductive paste is interposed between the second connection portion and the fourth portion. Appendix B8. the semiconductor element has a third electrode disposed on the element main surface, The method for manufacturing a semiconductor device according to any one of Appendix B1 to Appendix B7, further comprising the step of joining a conductive member to the third electrode and the first lead frame after the curing step. Appendix B9. a sealing resin forming step of forming a sealing resin that covers the semiconductor element, the first portion, the second portion, a portion of the first connecting portion, and a portion of the second connecting portion after the curing step; The method for manufacturing a semiconductor device according to any one of Appendix B1 to Appendix B8, further comprising: a cutting step of cutting the first connecting portion and the second connecting portion. Appendix B10. Multiple leads and A semiconductor element; a sealing resin that covers each of the plurality of leads and the semiconductor element, the plurality of leads include an island lead, a first lead, and a second lead spaced apart from one another; the semiconductor element has a main surface facing one side in a thickness direction and a back surface facing the other side, and a first electrode and a second electrode disposed on the main surface; the back surface of the element is bonded to the island lead, the first lead includes a first main portion and a first branch portion extending from the first main portion and joined to the first electrode; the second lead includes a second main portion and a second branch portion extending from the second main portion toward the first main portion as viewed in the thickness direction and joined to the second electrode; The first main portion has a first edge facing the second main portion and a first recessed edge recessed from the first edge in the extension direction of the second branch portion when viewed in the thickness direction. Appendix B11. The semiconductor device described in Appendix B10, wherein the second main portion has a second edge facing the first main portion and a second recessed edge recessed from the second edge in the extension direction of the first branch portion when viewed in the thickness direction. Appendix B12. the first electrodes and the second electrodes are arranged in a first direction perpendicular to the thickness direction, the first main portion and the second main portion are disposed on opposite sides of the semiconductor element in the thickness direction and in a second direction perpendicular to the first direction, the first branch portion extends from the first main portion along the second direction when viewed in the thickness direction, The semiconductor device according to any one of Appendix B10 and Appendix B11, wherein the second branch portion extends from the second main portion along the second direction when viewed in the thickness direction. Appendix B13. the plurality of leads includes a third lead and a fourth lead; the first lead has a first connection portion that is connected to the first main portion from a side opposite to the side to which the first branch portion is connected in the second direction and that extends to the other side in the thickness direction, the second lead has a second connection portion that is connected to the second main portion from a side opposite to the side to which the second branch portion is connected in the second direction and that extends to the other side in the thickness direction, the first connection portion is joined to the third lead; The semiconductor device according to Appendix B12, wherein the second connection portion is joined to the fourth lead. Appendix B14. Further comprising a conductive member, the plurality of leads includes a fifth lead; the semiconductor element has a third electrode disposed on the element main surface, The semiconductor device according to any one of Appendix B10 to Appendix B13, wherein the conductive member is joined to the third electrode and the fifth lead. [Explanation of symbols]

[0161] A1, A11, A2, B1: semiconductor device 1: First lead 2: Second lead 3: Third lead 4: 4th lead 5: 5th lead 6: Island Lead 7: Semiconductor elements 8: Sealing resin 10: Part 1 11: First main part 12: First branch 13:First extension part 14:Third extension part 15: First connection part 16: 1st protrusion 17: First recess 20: Part 2 21: Second main part 22: Second branch 23:Second extension part 24: 4th extension part 25: Second connection part 26:Second protrusion 27: Second recess 29:Connection part 30: Part 3 31,41,51,61: Thick wall part 32, 42, 52, 62: Thin-walled section 33,43,53,63:Extension part 40: Part 4 49: Relay section 50: Part 5 60: Island section 70: Element body 71: 1st electrode 72: 2nd electrode 73:Third electrode 91: 1st conductive junction 92:Second conductive junction 93:Third conductive junction 94: 4th conductive junction 95: 5th conductive junction 99: Wire 111, 211: Through holes 112: First edge 113: First recessed edge 121,221:Tip 122,222: Base 130: 1st connection part 131: First end surface 140:Third connection part 141: Third end surface 212: Second edge 213: Second recessed edge 230:Second connection part 231: Second end surface 240: 4th connection part 241: 4th end face 301, 401, 501, 601: Main surface 302,402,502,602:Back side 321,421: Recess 330,430,530,630:Connection part 331,431,531,631: End face 701: Main element surface 702: Back side of element 910: First conductive paste 920: Second conductive paste 930: Third conductive paste 940: 4th conductive paste 950: 5th conductive paste LF1: First lead frame LF2: Second lead frame f1, f2: Frame section

Claims

1. a first preparation step of preparing a first lead frame including an island portion; a second preparation step of preparing a semiconductor element having a main surface facing one side in a thickness direction and a back surface facing the other side, and at least one first electrode and at least one second electrode arranged on the main surface; a mounting step of mounting the semiconductor element on the island portion so that a first conductive paste is interposed between the rear surface of the element and the island portion; a third preparation step of preparing a second lead frame including a first portion, a second portion, a frame portion, a first connecting portion connecting the first portion and the frame portion, and a second connecting portion connecting the second portion and the frame portion; a positioning step of positioning the second lead frame so that a second conductive paste is interposed between the first portion and the at least one first electrode, and a third conductive paste is interposed between the second portion and the at least one second electrode; a curing step of curing the first conductive paste, the second conductive paste, and the third conductive paste, the first lead frame includes a third portion and a fourth portion; the first portion has a first main portion and a first connection portion that is connected to the first main portion and extends to the other side in the thickness direction, the second portion has a second main portion and a second connection portion that is connected to the second main portion and extends to the other side in the thickness direction, A method for manufacturing a semiconductor device, wherein in the placement process, the second lead frame is placed so that a fourth conductive paste is interposed between the first connection portion and the third portion, and a fifth conductive paste is interposed between the second connection portion and the fourth portion.

2. The first connection portion and the second connection portion each have a shape whose longitudinal direction is a first direction that is perpendicular to the thickness direction, the first portion has a first protruding portion that is separated from the first connection portion in the first direction, is connected to the first main portion, and extends to the other side in the thickness direction; a tip end of the first protruding portion in the thickness direction is located on the other side in the thickness direction than a tip end of the first connecting portion in the thickness direction, the second portion has a second protruding portion that is separated from the second connection portion in the first direction, is connected to the second main portion, and extends to the other side in the thickness direction; The method for manufacturing a semiconductor device according to claim 1 , wherein a tip end of the second protrusion in the thickness direction is located on the other side in the thickness direction than a tip end of the first connection portion in the thickness direction.

3. a sealing resin forming step of forming a sealing resin that covers the semiconductor element, the first portion, the second portion, a portion of the first connecting portion, and a portion of the second connecting portion after the curing step; The method for manufacturing a semiconductor device according to claim 1 , further comprising: a cutting step of cutting the first connecting portion and the second connecting portion.

4. the at least one first electrode includes a plurality of first electrodes; the at least one second electrode includes a plurality of second electrodes; the plurality of first electrodes and the plurality of second electrodes are alternately arranged in a first direction perpendicular to the thickness direction, the first portion has a plurality of first branch portions each connected to the first main portion, the second portion has a plurality of second branch portions each connected to the second main portion, 4. The method for manufacturing a semiconductor device according to claim 1, wherein in the placement process, the second conductive paste is interposed between each of the plurality of first branch portions and each of the plurality of first electrodes, and the third conductive paste is interposed between each of the plurality of second branch portions and each of the plurality of second electrodes.

5. In a second direction perpendicular to the thickness direction and the first direction, the first main portion is located on one side, and the second main portion is located on the other side relative to the first main portion, the first connection portion is connected to the first main portion from one side in the second direction, The method for manufacturing a semiconductor device according to claim 4 , wherein the second connection portion is connected to the second main portion from the other side in the second direction.

6. the semiconductor element has a third electrode disposed on the element main surface, 6. The method for manufacturing a semiconductor device according to claim 5, wherein the third electrode is located on the other side in the second direction with respect to the plurality of first electrodes, and on the one side in the first direction with respect to the plurality of second electrodes.

7. the second lead frame has a third connecting portion that connects the first portion and the frame portion, the first connecting portion extends from the first portion to the other side in the first direction, The method for manufacturing a semiconductor device according to claim 6 , wherein the third connecting portion extends from the first portion to one side in the first direction.

8. the second lead frame has a fourth connecting portion that connects the second portion and the frame portion, the second connecting portion extends from the second portion to the other side in the first direction, The method for manufacturing a semiconductor device according to claim 7 , wherein the fourth connecting portion extends from the second portion to the other side in the second direction.

9. 9. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of joining a conductive member to said third electrode and said first lead frame after said curing step.

10. 10. The method for manufacturing a semiconductor device according to claim 9, wherein the third electrode is disposed opposite to the first electrode located furthest to the first electrode in the first direction on the other side in the second direction.

11. each of the plurality of second branch portions extends from the second main portion toward the first main portion as viewed in the thickness direction; the third preparation step includes a process of forming a recessed edge portion on an edge of the first main portion that faces the second main portion when viewed in the thickness direction, 11. The method for manufacturing a semiconductor device according to claim 4, wherein the recessed edge portion is recessed in each of the directions in which the second branch portions extend when viewed from the edge in the thickness direction.

12. Multiple leads and A semiconductor element; a sealing resin that covers each of the plurality of leads and the semiconductor element, the plurality of leads include an island lead, a first lead, and a second lead spaced apart from one another; the semiconductor element has a main surface facing one side in a thickness direction and a back surface facing the other side, and at least one first electrode and at least one second electrode arranged on the main surface; the rear surface of the element and the island lead are joined by a first conductive joint, the first lead has a first main portion, at least one first branch portion, and a first extension portion; the second lead has a second main portion, at least one second branch portion, and a second extension portion; the at least one first branch portion and the at least one first electrode are joined by a second conductive joint, the at least one second branch portion and the at least one second electrode are respectively joined by a third conductive joint; the first extension portion has a first end surface exposed from the sealing resin, the second extension portion has a second end surface exposed from the sealing resin, the plurality of leads includes a third lead and a fourth lead; the first lead has a first connection portion connected to the first main portion from one side in the second direction and extending to the other side in the thickness direction; the second lead has a second connection portion connected to the second main portion from the other side in the second direction and extending to the other side in the thickness direction, the first connection portion and the third lead are joined by a fourth conductive joint portion, The second connection portion and the fourth lead are joined by a fifth conductive joint portion.

13. The first connection portion and the second connection portion each have a shape whose longitudinal direction is a first direction that is perpendicular to the thickness direction, the first portion has a first protruding portion that is separated from the first connection portion in the first direction, is connected to the first main portion, and extends to the other side in the thickness direction; a tip end of the first protruding portion in the thickness direction is located on the other side in the thickness direction than a tip end of the first connecting portion in the thickness direction, the second portion has a second protruding portion that is separated from the second connection portion in the first direction, is connected to the second main portion, and extends to the other side in the thickness direction; The semiconductor device according to claim 12 , wherein a tip end of the second protrusion in the thickness direction is located on the other side in the thickness direction than a tip end of the first connection portion in the thickness direction.

14. the at least one first electrode includes a plurality of first electrodes; the at least one second electrode includes a plurality of second electrodes; the plurality of first electrodes and the plurality of second electrodes are alternately arranged in a first direction perpendicular to the thickness direction, the at least one first branch includes a plurality of first branches; The semiconductor device according to claim 12 or 13, wherein the at least one second branch portion includes a plurality of second branch portions.

15. In a second direction perpendicular to the thickness direction and the first direction, the first main portion is located on one side, and the second main portion is located on the other side relative to the first main portion, the first connection portion is connected to the first main portion from one side in the second direction, The semiconductor device according to claim 14 , wherein the second connection portion is connected to the second main portion from the other side in the second direction.

16. the semiconductor element has a third electrode disposed on the element main surface, 16. The semiconductor device according to claim 15, wherein the third electrode is located on the other side in the second direction with respect to the plurality of first electrodes, and on the one side in the first direction with respect to the plurality of second electrodes.

17. the first lead has a third extending portion, the first extending portion extends from the first main portion to the other side in the first direction, The semiconductor device according to claim 16 , wherein the third extension portion extends from the first main portion to one side in the first direction.

18. the second lead has a fourth extension portion, the second extending portion extends from the second main portion to the other side in the first direction, The semiconductor device according to claim 17 , wherein the fourth extension portion extends from the second main portion to the other side in the second direction.

19. Further comprising a conductive member, the plurality of leads includes a fifth lead; 19. The semiconductor device according to claim 16, wherein the conductive member is joined to the third electrode and the fifth lead.

20. 20. The semiconductor device according to claim 19, wherein the third electrode is disposed opposite to the first electrode located furthest on the one side in the first direction among the plurality of first electrodes on the other side in the second direction.

21. the at least one second branch portion extends from the second main portion toward the first main portion when viewed in the thickness direction, 21. The semiconductor device according to claim 12, wherein the first main portion has an edge facing the second main portion when viewed in the thickness direction, and a recessed edge recessed from the edge in an extension direction of the at least one second branch portion when viewed in the thickness direction.

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