Wide active area high speed detector architecture.

Abstract

To disclose detectors and detection systems.SOLUTION: A substrate comprises a plurality of sensing elements (311-313) including a first plurality of sensing elements and a second plurality of sensing elements, and a plurality of sections (321-324) configured to connect the first plurality of sensing elements to an output, and connect the second plurality of sensing elements to an output. Switching regions configured to connect two or more sensing elements may be provided between the sensing elements. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy and / or beam intensity.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. Patent Application No. 62 / 651,650, filed April 2, 2018, the entire contents of which are incorporated herein by reference.

[0002] FIELD OF THE INVENTION

[0002] The description herein relates to detectors, and more particularly to detectors that may be applicable to charged particle detection. [Background technology]

[0003]

[0003] Detectors may be used to sense physically observable phenomena. For example, an electron microscope may include a detector that collects charged particles emitted from a sample and outputs a detection signal. The detection signal can be used to reconstruct an image of the inspected sample structure, e.g., to reveal defects in the sample.

[0004] In some applications, the area detector may include a pixelated array of electronic sensing elements capable of detecting one or more projected electron beams. The detector may include signal routing circuitry located adjacent to the array of sensing elements, for example, as a circuit die stacked together with the sensor die.

[0005]

[0005] As detector arrays become larger, the wiring associated with signal processing and signal readout can become longer. For example, the physical distance between the sensing elements in the detector array and the associated signal processing circuitry can become large due to the size of the active area of ​​the detector array or the location of the sensing elements. Therefore, the interconnections between individual sensing elements and the signal processing circuitry can become very long, which can introduce higher series resistance, parasitic capacitance, and series inductance. Furthermore, many interconnected components can be added to the circuit die. As the wiring length increases and components are added to the circuit, communication speed can be compromised. For example, parasitic parameters can cause loss of signal fidelity and can arise in various parts of the circuit when attempting to route analog signals from the sensor.

[0006]

[0006] Some applications may require high speed, high throughput, high bandwidth, etc. Complications such as those discussed above may result in reduced bandwidth, especially if the interconnects are not well planned and designed. This may prevent the detection system from achieving a desired bandwidth, such as that dictated by the design specifications. Furthermore, long interconnects in the analog signal path may introduce more noise and interference into the signal path. As a result, the signal-to-noise ratio of the detection system may be reduced. Summary of the Invention

[0007]

[0007] Embodiments of the present disclosure provide systems and methods for providing a detector. In some embodiments, a charged particle beam detection system is provided. The charged particle beam detection system may include a detector.

[0008]

[0008] In some embodiments, a detector is provided that includes a substrate including a plurality of sensing elements and a plurality of sections including a first section that connects a first group of the plurality of sensing elements to an output and a second section that connects a second group of the plurality of sensing elements to the output.

[0009]

[0009] According to some embodiments, a configuration can be achieved that solves the problems caused by long wiring lengths without sacrificing the performance or flexibility of the detection system. By dividing the multiple sensing elements that make up the detector into an array of smaller sections, the effects of parasitic parameters such as resistance, capacitance, and inductance can be reduced. Interconnections can be formed between the sensing elements and analog signal processing circuits associated with the sensing elements, which can reduce the detrimental effects on the bandwidth of the detection system. Furthermore, improved signal routing can be achieved using digital multiplexers following the analog signal processing circuits and signal paths. The flexibility of the detection system can be maintained without incurring a degradation in signal fidelity.

[0010]

[0010] Additional objects and advantages of the disclosed embodiments will be set forth in part in the description that follows, and in part will be obvious from the description, or may be learned by practicing the embodiments. The objects and advantages of the disclosed embodiments may be realized and attained by means of the elements and combinations described in the present disclosure. However, exemplary embodiments of the present disclosure need not necessarily achieve such exemplary objects and advantages, and some embodiments may not achieve any of the described objects and advantages.

[0011]

[0011] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not intended to limit the disclosed embodiments as claimed.

[0012]

[0012] The above and other aspects of the present disclosure will become more apparent from the following description of exemplary embodiments taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0013] [Figure 1]FIG. 1 is a schematic diagram illustrating an exemplary electron beam inspection (EBI) system consistent with embodiments of the present disclosure. [Figure 2]

[0014] 2 is a schematic diagram illustrating an example electron beam tool consistent with embodiments of the present disclosure that may be part of the example electron beam inspection system of FIG. 1. [Figure 3]

[0015] 1 is a schematic diagram of an exemplary structure of a detector consistent with embodiments of the present disclosure. [Figure 4]

[0016] FIG. 2 illustrates an exemplary surface of a detector array consistent with embodiments of the present disclosure. [Figure 5]

[0017] FIG. 1 illustrates a cross-sectional view of a detector consistent with an embodiment of the present disclosure. [Figure 6]

[0018] FIG. 1 illustrates a cross-sectional view of a detector consistent with an embodiment of the present disclosure. [Figure 7]

[0019] FIG. 1 illustrates a cross-sectional view of a detector consistent with an embodiment of the present disclosure. [Figure 8]

[0020] FIG. 1 illustrates a cross-sectional view of a detector consistent with an embodiment of the present disclosure. [Figure 9]

[0021] FIG. 1 illustrates a detector structure consistent with an embodiment of the present disclosure. [Figure 10]

[0022] FIG. 1 illustrates a detector structure consistent with an embodiment of the present disclosure. [Figure 11]

[0023] FIG. 1 illustrates a detection system consistent with an embodiment of the present disclosure. [Figure 12]

[0024] FIG. 1 is a circuit diagram illustrating the sensor layer and circuit layer of a detector consistent with an embodiment of the present disclosure. [Figure 13]

[0025] FIG. 2 illustrates an exemplary surface of a detector array consistent with embodiments of the present disclosure. [Figure 14A]

[0026] FIG. 10 illustrates the relationship between electron beam spot and section size, consistent with an embodiment of the present disclosure. [Figure 14B]

[0026] FIG. 1 illustrates the relationship between electron beam spot and section size consistent with an embodiment of the present disclosure. [Figure 14C]

[0026] FIG. 1 illustrates the relationship between electron beam spot and section size consistent with an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0027] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the drawings. The following description refers to the accompanying drawings, in which like numbers in different drawings represent the same or similar elements unless otherwise noted. The implementations described in the following description of exemplary embodiments do not represent all implementations consistent with the present invention. Instead, they are merely examples of apparatus, systems, and methods consistent with aspects related to the subject matter as recited in the appended claims. For example, although some embodiments are described in the context of providing a detector in a system utilizing an electron beam, the disclosure is not so limited. Other types of charged particle beams may be similarly applicable. Furthermore, the detector may be used in other imaging systems, such as optical imaging, light detection, x-ray detection, etc.

[0015]

[0028] Embodiments of the present disclosure may provide a detector. The detector may have an array architecture. The detector may be used in a detection system that may be useful, for example, in a charged particle system for charged particle imaging. The charged particle system may be a scanning electron microscope (SEM) tool for imaging and inspecting samples. The charged particle system may be used, for example, for defect detection.

[0016]

[0029] In some exemplary embodiments, a detection system is provided that includes a detector having a plurality of sensing elements divided into sections. The sections may be uniform. For example, each section may have the same number of sensing elements. The sections may be the same shape and size as each other. Each section may have corresponding signal processing circuitry and signal paths. The sensing elements of a section may be associated with the signal processing circuitry and signal paths of the corresponding section.

[0017]

[0030] The detector may include one or more substrates, such as dies. For example, there may be a sensor die and a circuit die. The dies may be stacked in the thickness direction of the detector. For example, the detector may be formed as a substantially planar member with sensing elements arranged in a two-dimensional plane. The sensor die may include the sensing elements, and the circuit die may include signal processing circuitry. The sensor die and the circuit die may be stacked together in a stacking direction perpendicular to the plane of the array of sensing elements.

[0018]

[0031] In some embodiments, the detector section may be located directly above the corresponding signal processing circuitry and signal path.

[0019]

[0032] The size and shape of the detector sections may be determined so that the interconnections between the sensing elements and the corresponding signal processing circuitry and signal paths do not introduce parasitic capacitance, resistance, and inductance. Such parasitics may cause a reduction in the overall bandwidth of the detection system. For example, a detection system having specified characteristics, such as bandwidth among others, as determined by the design specifications may not be feasible due to parasitic parameters. Furthermore, the interconnections may introduce noise and interference, and such effects should not reduce the signal-to-noise ratio of the system below the design specifications.

[0020]

[0033] In some embodiments, the size of the detector sections and the arrangement of associated signal processing circuitry and signal paths may be configured to ensure that every electron beam spot projected onto the detector surface is received by at least one section. Multiple beam spots may be received by a section, and the signal from each electron beam spot may have a signal path assigned to it at any time.

[0021]

[0034] In some embodiments, the criterion for determining the size of a section may be as follows: For example, under any imaging conditions, at most one node in the electron beam spot grid should fall within one section. In the case of a rectangular grid of electron beam spots, the criterion for selecting the size of a section may be that the diagonal size of the section is smaller than the length of the smallest pitch of the electron beam spots in the grid. Therefore, at most one beam center is located within one section. In this way, it may be ensured that there are sufficient signal processing circuits and signal paths to accommodate signal processing and readout of the beams projected onto an area of ​​the detector surface.

[0022]

[0035] At the output of the section, a digitized signal may be generated that represents the intensity of the electron beam spot received by the detector section and its corresponding signal processing circuitry and signal path. A digital multiplexer may be connected to the output of the signal processing circuitry and signal path of the section. The multiplexer may collect data from the active signal processing circuitry and signal path that processes the signal from each electron beam spot.

[0023]

[0036] The size of the group of sensing elements for each electron beam spot may be smaller than, equal to, or larger than the size of a given detector section. For example, a detector may be provided that groups and combines sensing elements associated with an electron beam spot. When multiple sensing elements are combined, the combined electron detection signal may be routed to the signal processing circuitry and signal path of a given section even if some of the sensing elements are not included within the given section.

[0024]

[0037] The detection system may be configured such that the number of electron beam spots projected on the detector surface is less than or equal to the number of signal processing circuits and signal paths in the section. At any time, some of the signal processing circuits and signal paths may be disabled. Some of the signal processing circuits and signal paths may be deactivated based on predetermined requirements.

[0025]

[0038] In some embodiments, additional interconnects may be added. For example, additional interconnects may be provided within the circuit die. The interconnects may be provided on the same circuit die that includes the signal processing circuitry and signal paths of the section. Some or all of the interconnects may be connected to the sensing elements and to the inputs of the signal processing circuitry and signal paths. The interconnects may include switches.

[0026]

[0039] If additional interconnects are connected in parallel with existing interconnects, it may be possible to further reduce the impact of parasitic parameters on bandwidth. Furthermore, the additional interconnects may provide more signal routing flexibility for the signals of each electron beam spot. Furthermore, if the number of active signal processing circuits and signal paths required is less than the number of signal processing circuits and signal paths integrated on the die, the additional interconnects provide a possible way to improve fault tolerance capabilities. For example, even if one or more signal processing circuits and signal paths malfunction, the detection system can still operate without degraded functionality or performance.

[0027]

[0040] As discussed herein, signal processing circuits and signal paths may refer to structures contained in one section element. A section element may include one or more circuits. Circuit components, logic elements, wiring paths, etc. may also be provided. It should be understood that signal processing circuits and signal paths may be interpreted as including signal processing circuits and / or signal paths.

[0028]

[0041] Reference is now made to FIG. 1 , which illustrates an exemplary electron beam inspection (EBI) system 100 that may include a detector consistent with embodiments of the present disclosure. The EBI system 100 may be used for imaging. As shown in FIG. 1 , the EBI system 100 includes a main chamber 101, a load / lock chamber 102, an electron beam tool 104, and an equipment front-end module (EFEM) 106. The electron beam tool 104 is disposed within the main chamber 101. The EFEM 106 includes a first load port 106 a and a second load port 106 b. The EFEM 106 may include additional load ports. The first load port 106 a and the second load port 106 b receive a wafer front opening unified pod (FOUP) containing wafers (e.g., semiconductor wafers or wafers made of other materials) or samples (wafers and samples may be collectively referred to herein as “wafers”) to be inspected.

[0029]

[0042] One or more robot arms (not shown) in the EFEM 106 can transfer wafers to the load / lock chamber 102. The load / lock chamber 102 is connected to a load / lock vacuum pumping system (not shown), which removes gas molecules from the load / lock chamber 102 to reach a first pressure lower than atmospheric pressure. After the first pressure is reached, one or more robot arms (not shown) can transfer the wafers from the load / lock chamber 102 to the main chamber 101. The main chamber 101 is connected to a main chamber vacuum pumping system (not shown), which removes gas molecules from the main chamber 101 to reach a second pressure lower than the first pressure. After the second pressure is reached, the wafers are subjected to inspection by the electron beam tool 104. The electron beam tool 104 can be a single-beam system or a multi-beam system. A controller 109 is electronically connected to the electron beam tool 104. The controller 109 may be a computer adapted to perform various controls of the EBI system 100. While the controller 109 is shown in Figure 1 as being external to the structure including the main chamber 101, the load / lock chamber 102, and the EFEM 106, it should be understood that the controller 109 may also be part of the structure.

[0030]

[0043] Reference is now made to Figure 2. Figure 2 illustrates an electron beam tool 104 (also referred to herein as apparatus 104) that includes an electron source 202, a gun aperture 204, a condenser lens 206, a primary electron beam 210 emitted from the electron source 202, a source conversion unit 212, multiple beamlets 214, 216, and 218 of the primary electron beam 210, primary projection optics 220, a wafer stage (not shown in Figure 2), multiple secondary electron beams 236, 238, and 240, secondary optics 242, and an electron detection device 244. The primary projection optics 220 may include a beam separator 222, a deflection scanning unit 226, and an objective lens 228. The electron detection device 244 may include detection subregions 246, 248, and 250.

[0031]

[0044] The electron source 202, gun aperture 204, condenser lens 206, source conversion unit 212, beam separator 222, deflection scanning unit 226, and objective lens 228 may be aligned with a primary optical axis 260 of the apparatus 104. The secondary optics 242 and electron detection device 244 may be aligned with a secondary optical axis 252 of the apparatus 104.

[0032]

[0045] The electron source 202 may include a cathode, extractor, or anode, and primary electrons may be emitted, extracted, or accelerated from the cathode to form a primary electron beam 210 with a (virtual or real) crossover 208. The primary electron beam 210 may be visualized as being emitted from the crossover 208. The gun aperture 204 may block peripheral electrons of the primary electron beam 210 to reduce the size of the probe spots 270, 272, and 274.

[0033]

[0046] The source conversion unit 212 may include an array of imaging elements (not shown in FIG. 2 ) and an array of beam-limiting apertures (not shown in FIG. 2 ). The array of imaging elements may include an array of microdeflectors or microlenses. The array of imaging elements may form multiple parallel images (virtual or real) of the crossover 208 with the multiple beamlets 214, 216, and 218 of the primary electron beam 210. The array of beam-limiting apertures may limit the multiple beamlets 214, 216, and 218.

[0034]

[0047] The condenser lens 206 may focus the primary electron beam 210. The current of the beamlets 214, 216, and 218 downstream of the source conversion unit 212 can be varied by adjusting the focusing power of the condenser lens 206 or by changing the radial size of the corresponding beam-limiting aperture within the array of beam-limiting apertures. The objective lens 228 can focus the beamlets 214, 216, and 218 onto the wafer 230 for inspection, and can form multiple probe spots 270, 272, and 274 on the surface of the wafer 230.

[0035]

[0048] Beam separator 222 may be a Wien filter-type beam separator that generates electrostatic and magnetic dipole fields. In some embodiments, when applied, the force exerted by the electrostatic dipole field on electrons in beamlets 214, 216, and 218 may be equal in magnitude and opposite in direction to the force exerted by the magnetic dipole field on electrons. Therefore, beamlets 214, 216, and 218 may pass straight through beam separator 222 with a zero deflection angle. However, the total dispersion of beamlets 214, 216, and 218 generated by beam separator 222 may be non-zero. Beam separator 222 may separate secondary electron beams 236, 238, and 240 from beamlets 214, 216, and 218 and direct the secondary electron beams 236, 238, and 240 to secondary optics 242.

[0036]

[0049] The deflection scanning unit 226 can deflect the beamlets 214, 216, and 218 to scan the probe spots 270, 272, and 274 across the surface area of ​​the wafer 230. In response to the beamlets 214, 216, and 218 impinging on the probe spots 270, 272, and 274, secondary electron beams 236, 238, and 240 can be emitted from the wafer 230. The secondary electron beams 236, 238, and 240 can include energy-dispersed electrons, including secondary electrons and backscattered electrons. The secondary optics 242 can focus the secondary electron beams 236, 238, and 240 onto detection sub-regions 246, 248, and 250 of the electron detection device 244. The detection sub-regions 246, 248, and 250 may be adapted to detect corresponding secondary electron beams 236, 238, and 240 and generate corresponding signals that are used to reconstruct an image of the surface region of the wafer 230.

[0037]

[0050] Reference is now made to Figure 3, which shows a schematic diagram of an exemplary structure of a detector 300. The detector 300 may be provided as the electronic detection device 244.

[0038]

[0051] The detector 300 includes a sensor layer 301, a section layer 302, and a readout layer 303. The sensor layer 301 may include a sensor die comprised of multiple sensing elements 311, 312, 313, 314, etc. For example, the multiple sensing elements may be provided in an array of uniformly sized and shaped, uniformly spaced sensing elements.

[0039]

[0052] The section layer 302 may include multiple sections 321, 322, 323, and 324. A section may include a wiring path adapted to connect one or more sensing elements among the multiple sensing elements. For example, as shown in FIG. 3 , section 323 may be adapted to electrically connect the outputs of sensing elements 311, 312, 313, and 314. Section 323 may be adapted to output a combined signal collected from sensing elements 311, 312, 313, and 314 as a common output. A section may be adapted to connect to a sensing element located directly above it. For example, a section may have a grid of terminals adapted to connect to the outputs of multiple sensing elements. The sections may be provided in an array configuration so that the sections are uniform in size, shape, and placement. The sections may be, for example, square-shaped. Separation regions may be provided between adjacent sections to electrically isolate the sections from each other. In some embodiments, the sections may be arranged in an offset pattern, such as a tiled layout.

[0040]

[0053] The section layer 302 may include a semiconductor substrate including one or more wiring paths and other circuit elements. For example, the section layer 302 may include a base substrate on which a plurality of wiring paths are provided, each of the plurality of wiring paths being associated with a section. The wiring paths may include lines of conductive material printed on the base substrate, flexible wires, bonding wires, etc. One or more switches may also be provided. For example, a switch may be provided between an input to a section and an output from the section. The switch may be provided to enable the output of an individual sensing element to be connected or disconnected from a common output of the section. Corresponding circuitry for controlling the switch may also be provided in the section layer 302. In some embodiments, the switches may be provided in a separate switch matrix, which may itself include circuitry for controlling the switch.

[0041]

[0054] The readout layer 303 may include signal processing circuitry for processing the output of the sensing elements. A corresponding signal processing circuit may be provided for each section of the section layer 302. Multiple separate signal processing circuit sections may be provided. The signal processing circuit sections may be provided in an array of sections having uniform sizes, shapes, and uniform placement. For example, the readout layer 303 may include multiple signal processing circuit sections 331, 332, 333, and 334. The signal processing circuit sections may be adapted to connect with the output from the corresponding section of the section layer 302. For example, as shown in FIG. 3, the signal processing circuit section 333 may be adapted to electrically connect with the output of section 323.

[0042]

[0055] The readout layer 303 may include input and output terminals. The output of the readout layer 303 may be connected to a component for reading and interpreting the output of the detector 300. For example, the readout layer 303 may be directly connected to a digital multiplexer, a digital logic block, a controller, a computer, etc.

[0043]

[0056] The arrangement of the sensor layer 301, the section layer 302, and the readout layer 303 may correspond to a stacked relationship. For example, the section layer 302 may be attached directly onto the readout layer 303, and the sensor layer 301 may be attached directly onto the section layer 302. The layers may be stacked such that sections within the section layer 302 are aligned with signal processing circuit sections of the readout layer 303. Furthermore, the layers may be stacked such that one or more sensing elements are aligned with the sections. A sensing element to be associated with a section may be contained within the section. For example, in a plan view of the detector 300, the sensing elements of a section may fit within the boundaries of the section. Furthermore, individual sections of the section layer 302 may overlap with signal processing circuit sections of the readout layer 303. In this manner, predetermined regions may be established for associating sensing elements with sections and signal processing circuit sections.

[0044]

[0057] The size of a section and the number of sensing elements associated with a section may vary, for example, although Figure 3 shows four sensing elements in one section, embodiments of the present disclosure are not so limited.

[0045]

[0058] 3 depicts the sensor layer 301, the section layer 302, and the readout layer 303 as multiple separate layers, it should be understood that the sensor layer 301, the section layer 302, and the readout layer 303 need not be provided as separate substrates. For example, the wiring paths of the section layer 302 may be provided in a sensor die including multiple sensing elements, or may be provided outside the sensor die. The wiring paths may be patterned on the sensor layer 301. Furthermore, the section layer 302 may be combined with the readout layer 303. For example, a circuit die may be provided that includes the wiring paths of the section layer 302 and the signal processing circuitry of the readout layer 303. Thus, the structures and functions of the various layers may be combined or separated.

[0046]

[0059] In some embodiments, the detector may be provided in a two-die configuration. However, embodiments of the present disclosure are not so limited. For example, the functionality of the sensor layer, section layer, and readout layer may be implemented in a single die or in a package that may include one or more dies.

[0047]

[0060] Reference is now made to Figure 4, which illustrates an exemplary structure of a sensor surface 400 that may form the surface of the electron detection device 244. Multiple sections 410, 420, 430, and 440 may be provided that correspond to different regions of the sensor surface 400. Each section of the sensing element may be capable of receiving at least a portion of a beam spot emanating from a particular location from the wafer 230, such as one of the secondary electron beams 236, 238, and 240 as shown in Figure 2.

[0048]

[0061] The sensor surface 400 may include an array of sensing elements, including sensing elements 411, 412, and 413. Each of sections 410, 420, 430, and 440 may include some of the plurality of sensing elements. For example, section 410 may include a first plurality of sensing elements, section 420 may include a second plurality of sensing elements, and so on. The first plurality of sensing elements and the second plurality of sensing elements may be mutually exclusive. The sensing elements may be diodes. The sensing elements may also be diode-like elements capable of converting incident energy into a measurable signal. The sensing elements may include, for example, PIN diodes, avalanche diodes, electron multiplier tubes (EMTs), etc., and combinations thereof. Regions 425 may be provided between adjacent sensing elements. Regions 425 may be isolation regions for isolating sides and / or corners of adjacent pixels from each other. Regions 425 may include an insulating material that is different from the material of other regions of the sensor surface 400. The regions 425 may be provided as squares. In some embodiments, the regions 425 are not provided between adjacent sides of the sensing element.

[0049]

[0062] The sensing elements can generate a current signal commensurate with the electrons received within the active area of ​​the sensing element. The pre-processing circuitry can convert the generated current signal into a voltage that can represent the intensity of the received electron beam spot. The pre-processing circuitry can include, for example, a pre-amplifier circuit combined with a high-speed transimpedance amplifier. Other circuits can also be provided for other functions. For example, a switch actuation circuit can be provided that can control switching elements to connect the sensing elements together.

[0050]

[0063] In some embodiments, a field programmable detector array may include sensing elements with integrated switching regions between them. For example, detectors such as some of the examples discussed in U.S. Patent Application No. 62 / 555,032 may be provided. For example, switching regions may be provided between the switching elements to couple multiple sensing elements so that they are grouped when covered by the same electron beam spot. Circuitry for controlling the switching regions may be included in the signal processing circuitry of the readout layer.

[0051]

[0064] Some examples of detector and sensor layer structures are considered.

[0052]

[0065] Reference is now made to FIG. 5 , which shows a simplified diagram of the layer structure of a detector 500. The detector 500 may be provided as the detector 244 in the electron beam tool 104 as shown in FIG. 2 . The detector 500 may have multiple layers stacked in a thickness direction, which is substantially parallel to the direction of incidence of the electron beam. The multiple layers may include a sensor layer 510 and a circuit layer 520. Some layers have been omitted for clarity. The sensor layer 510 may have a sensor surface 501 for receiving incident electrons. Sensing elements, such as sensing elements 511, 512, and 513, may be provided in the sensing layer 510. A switching element 519 may be provided between horizontally adjacent sensing elements in a cross-sectional view. The switching element 519 may be embedded in the sensing layer 510.

[0053]

[0066] In some embodiments, the switching region may be located within the active area of ​​the sensing element, while in other embodiments the switching region may be formed outside the active area of ​​the sensing element.

[0054]

[0067] For example, the sensor layer 510 may be configured as a diode, and the sensing elements 511, 512, and 513 may be similar to the sensing elements 411, 412, and 413 described above. Additionally, the switching element 519 may be configured as a transistor, such as a MOSFET. Each of the sensing elements 511, 512, and 513 may include an output for electrical connection with the circuit layer 520. The output may be integrated with the switching element 519 or may be separate. The output may be integrated into the bottom layer of the sensor layer 510, which may be a metal layer.

[0055]

[0068] 5 depicts sensing elements 511, 512, and 513 as separate units when viewed in cross section, such a division may not exist in practice. For example, the sensing elements of the detector may be formed by semiconductor devices comprising PIN diode devices that may be fabricated as a substrate having multiple layers including p+ regions, intrinsic regions, and n+ regions. Thus, sensing elements 511, 512, and 513 may be continuous in cross section. Switching element 519 may be integral with the sensing elements.

[0056]

[0069] The circuit layer 520 is disposed adjacent to the sensor layer 510. The circuit layer 520 may represent the section layer 302 and readout layer 303 of the detector as described above with reference to FIG. 3. The circuit layer 520 may include line wires, interconnects, and various electronic circuit components. The circuit layer 520 may include a processing system. The circuit layer 520 may be adapted to receive an output current detected by the sensor layer 510.

[0057]

[0070] Reference is now made to Figure 6, which shows a simplified diagram of the layer structure of a further example detector 600, such as the example detector discussed in U.S. Patent Application No. 62 / 560,122. As shown in Figure 6, a switching element 519 may be provided between horizontally adjacent sensing elements in a cross-sectional view. The switching element 519 may be provided outside the sensor layer 510. For example, the switching element 519 may be embedded within the circuit layer 520.

[0058]

[0071] In some embodiments, the individual sensing elements 511, 512, and 513 may be separated by separation regions that extend in the thickness direction, for example, the sides of the sensing elements 511, 512, and 513 that are parallel to the thickness direction may be separated from each other by separation regions.

[0059]

[0072] In some embodiments, the switching elements 519 may be formed on a separate die. For example, as shown in Figure 7, detector 700 includes a switch die 710. The switch die 710 may include multiple switching elements 519. The switch die 710 may be sandwiched between the sensor layer 510 and the circuit layer 520. The switch die 710 may be electrically connected to the sensor layer 510 and the circuit layer 520.

[0060]

[0073] In some embodiments, the switching element may be integrated within the sensor layer, integrated within another layer, or located partially or completely within an existing layer. In some embodiments, for example, the sensor layer may include wells, trenches, or other structures, and the switching element may be formed within these structures.

[0061]

[0074] FIG. 8 illustrates a cross-sectional view of a sensing element 800 with embedded p-wells and n-wells for forming switches and other active and / or passive elements. Such elements can be connected to the sensing element 800 or other components. The sensing element 800 may form part of a sensor layer 805, which may be a sensor layer of a detector array, while circuit layers and other layers are not shown. The sensing element 800 may include, among other things, a diode device having a surface layer 801, a p+ region 810, a p-epitaxial region 820, and an n- region 830. The surface layer 801 may form the detection surface of the detector that receives incident electrons. The surface layer 801 may be a metal layer formed, for example, of aluminum. Other conductive materials may also be used. An electrode 850 may be provided on the opposite side of the surface layer 801 as a charge collector. The electrode 850 may be configured to output a current signal representative of the amount of electrons received within the active area of ​​the sensing element 800.

[0062]

[0075] The switching element 819 may be formed by a metal oxide semiconductor device. For example, multiple CMOS devices may be formed on the backside of the sensor layer 805. Examples of CMOS devices may include a deep p-well 841, an n-well 842, and a p-well 843. The process of fabricating the CMOS devices may include, for example, etching and patterning, among other techniques.

[0063]

[0076] Although only one sensing element 800 is shown, it should be understood that the sensor layer 805 may be made up of multiple sensing elements. The sensing element may be continuous in cross-section.

[0064]

[0077] In operation, when electrons strike the surface layer 801, the support layer of the substrate may be flooded with charge carriers from the p+ region 810. In this manner, the sensing elements may be activated by the electron beam spot and may generate an output signal, such as an electron beam current. If the electron beam spot covers multiple adjacent sensing elements, the sensing elements may be grouped together ("coupled") to collect current. Sensing elements may be coupled by turning on a switching element between them.

[0065]

[0078] The detector may be configured to allow individual sensing elements to communicate with external components, for example, via signal and / or data lines and address signals. The detector may be configured to operate a switch so that two or more sensing elements can be grouped (coupled) together to collect current together. As can be seen in FIG. 8, the sensing elements may be provided without isolation regions on the horizontal sides. Thus, when a sensing element is activated, all of the area below the surface layer 801 can be activated. If no isolation regions are provided between adjacent sensing elements, the dead area between them may be eliminated.

[0066]

[0079] Reference is now made to FIG. 9 , which illustrates a further representation of a section configuration consistent with exemplary embodiments of the present disclosure. A plurality of sensing elements 901, 902, 903, 904, 905, 906, etc. may be provided. The plurality of sensing elements may comprise a sensor layer that may form the sensing surface of the electronic detection device 244, as described above with reference to FIG. 2 . The sensor layer may include switching regions, such as switching elements 911, 912, and 913, that may be provided between adjacent sensing elements. The switching elements 911, 912, and 913 may correspond to the switching elements 519 or 819, as described above with reference to FIGS. 5-8 . For example, the switching elements 911, 912, and 913 may be configured to group two or more adjacent sensing elements together when they are turned on.

[0067]

[0080] Multiple sections, such as sections 921, 922, and 923, may be provided. The sections may be adapted to electrically connect one or more sensing elements. The sections may be adapted to output a common output. A first section may connect one or more sensing elements of a first plurality of sensing elements of the plurality of sensing elements to the output, and a second section may connect one or more sensing elements of a second plurality of sensing elements of the plurality of sensing elements to the output. For example, as shown in FIG. 9 , section 921 may be electrically connected to a first plurality of sensing elements including sensing elements 901, 902, and 903 and connected to a first output 928. Section 922 may be electrically connected to a second plurality of sensing elements including sensing elements 904, 905, and 906 and connected to a second output 929. The sections may connect to the sensing elements via multiple wiring paths 919 and switches 1019. The sections may be adapted to output electrical signals to signal processing circuitry and further circuit elements. For example, section 922 can output an electrical signal to signal processing circuitry 930 .

[0068]

[0081] The signal processing circuit 930 may include one or more signal processing circuits for processing the output of the connected sensing elements. For example, the signal processing circuit 930 may include a preamplifier 931, such as a transimpedance amplifier (TIA) or a charge transfer amplifier (CTA), a postamplifier 932, such as a variable gain amplifier (VGA), and a data converter 933, such as an analog-to-digital converter (ADC). One or more of the above components may be omitted. Furthermore, other circuits may be provided for other functions. For example, a switch actuation circuit may be provided that can control switching elements or other switches for connecting the sensing elements to each other. Furthermore, in some embodiments, an analog output line may be provided that can be read out by an analog path in addition to or instead of being sent to the ADC.

[0069]

[0082] A digital switch 940 may be provided. The digital switch 940 may include a switch matrix. The digital switch 940 may include a multiplexer. For example, the multiplexer may be configured to receive a first number of inputs and generate a second number of outputs. The first and second numbers may correspond to parameters of the detector, such as the total number of sensing element sections, and parameters of the device 104, such as the number of beams (or beamlets) generated from the electron source 202. The digital switch 940 may communicate with external components via data lines and address signals. The digital switch 940 may also control the reading / writing of data. The digital switch 940 may be configured to control the operation of switching elements. The digital switch 940 may be configured to generate output signals via multiple output paths 951, 952, 953, etc. Other components, such as relays, may be connected to the output channels of the digital switch 940. Thus, multiple sections can function as separate data highways for the detector signals.

[0070]

[0083] It should be understood that various components may be inserted at various stages in the representation of FIG.

[0071]

[0084] Additionally, one or more switches may be provided between the sensing elements and the signal processing circuitry associated with a section. The switches may be provided along the wiring paths of the section or in addition to the wiring paths. For example, as shown in FIG. 9, a switch 1019 is provided in line with each wiring path 919. The switch 1019 may be located between multiple sensing elements and sections 921, 922, and 923. If such switches are provided, they may isolate inactive sensing elements, for example, to reduce noise pickup, among other technical effects.

[0072]

[0085] In some embodiments of the present disclosure, analog switches are coupled before the signal processing path and digital switches are positioned after the signal processing path. In this way, the detector may be configured to achieve the greatest flexibility in interconnections between sensing elements and the greatest number of combinations of those interconnections. The system may be realized without the difficulties of implementing a purely analog switch matrix or a purely digital switch matrix. Furthermore, in accordance with some aspects of the present disclosure, scalability of the detection system may be achieved. In contrast, in comparative examples, solutions that rely on a purely analog switch matrix or a purely digital switch matrix may encounter difficulties when scaling up the system.

[0073]

[0086] In some embodiments, multiple sensing elements may be connected to a section via a variable number of wiring paths. A section may connect to one or more sensing elements in a first plurality of sensing elements. For example, while FIG. 9 shows each sensing element connected to a section via its own wiring path, such as wiring path 919, some such wiring paths may be omitted. As shown in FIG. 10, multiple sensing elements may connect to a section via only one wiring path 1119. For example, only one sensing element in a first plurality of sensing elements associated with a section may have a wiring path connected to that section. Only one sensing element in a second plurality of sensing elements associated with another section may have a wiring path connected to that section, and so on. Thus, when an electron beam spot is incident on a detector, a signal generated from an activated sensing element may be transmitted through a section only if the sensing element with the wiring path is activated. Coupling sensing elements allows detection signals generated in adjacent sensing elements to be transmitted through the wired sensing elements. Such a configuration can simplify the manufacture of the detector.

[0074]

[0087] Reference is now made to FIG. 11 , which illustrates a further representation of a section configuration consistent with an exemplary embodiment of the present disclosure. A detection system 1200 may be provided that includes a plurality of sensing elements, a plurality of sections 1240, and a digital interface 1250. The plurality of sensing elements may form a sensor surface 400, for example, as described above with respect to FIG. 4 . The plurality of sections 1240 may be comprised of a signal conditioning circuit array 1210, an analog signal processing path array 1220, and an ADC array 1230, each of which is divided into a plurality of separate units. That is, the section 1240 may be considered part of the signal conditioning circuit array 1210, the analog signal processing path array 1220, and the ADC array 1230. One section may be associated with a first plurality of sensing elements, one element of the signal conditioning circuit array 1210, one element of the analog signal processing path array 1220, and one element of the ADC array 1230. For example, one section may include signal conditioning circuitry adapted to process the output of one or more sensing elements. One section may also include a signal processing path adapted to provide gain and offset control. One section may also include ADC circuitry.

[0075]

[0088] The detection system 1200 may route outputs from multiple sensing elements to a signal conditioning circuit array 1210 and through various sections. One section of the signal conditioning circuit array 1210 may receive one or more outputs from different sensing elements. Thus, electron detection currents representing the intensity of at least a portion of the electron beam spot signal can be combined and processed together. For example, the electron detection currents of a group of sensing elements may be processed through respective sections and passed to a digital interface 1250. Thus, the digital interface 1250 may receive the section outputs downstream of the ADC circuit. The digital interface 1250 may include a digital switch, a digital control unit, or a controller. The digital interface 1250 may communicate with the analog signal processing path array 1230, the ADC array 1230, and the detector array. The digital interface 1250 may also send and receive information to a deflection and image control (DIC) unit via a transceiver, which may include, for example, a transmitter TX and a receiver RX. The controller 51 may perform imaging control.

[0076]

[0089] In some embodiments, the sections may include wiring paths. A network of wiring path sections may be provided for routing signals to corresponding signal processing circuitry. Further, in some embodiments, the sections may include such signal processing circuitry.

[0077]

[0090] 12 illustrates a circuit diagram that may be included in a sectioned configuration consistent with embodiments of the present disclosure. The dashed line may represent a boundary between a sensor die 701 and a circuit die 702. For example, a layout such as that shown in circuit die 702 may represent circuitry provided in circuit layer 520, as described above with reference to FIG. 5. A layout such as that shown in sensor die 701 may represent, for example, multiple sensing elements with switching elements 767 therebetween. For example, a layout such as that shown in sensor die 701 may represent the configuration of sensor layer 510, as described above with reference to FIG. 5. It should be understood that, in some embodiments, switching elements 767 may be provided outside the active areas of the electronic sensing elements.

[0078]

[0091] The circuit configuration of Figure 12 may be an example of a signal processing circuit that may be provided within a section. For example, a circuit similar to that shown in Figure 12 may be applied to implement a detector in which two or more sensing elements may be coupled. However, it should be noted that in some embodiments, the circuit for implementing such a detector may be provided outside of the circuit provided within the section.

[0079]

[0092] A circuit for implementing the coupling of sensing elements will now be described. In an exemplary process of signal detection, one pixel of the detector may be associated with one sensing element of the sensing array. Thus, the first pixel may be configured to generate a PIN diode current 711. At the start of the process for PIN diode signal strength detection, switch 721 and switch 731 may be set to open, while switch 741 is set to close. Thus, the voltage of capacitor 735 may be reset to Vref2.

[0080]

[0093] Next, switches 721 and 741 may be set to open, while switch 731 is set to close. In this state, capacitor 735 begins to charge and generate a voltage. Capacitor 735 may be allowed to charge for a predetermined period of time, e.g., t_charge, after which switch 731 is set to open.

[0081]

[0094] Comparator 736 then compares the voltage on capacitor 735 with a reference value Vref1. The reference value Vref1 may be set as a predetermined signal level. Based on this reference value, the circuit may output a signal indicating that the sensing element is collecting current from the incident electron beam. Therefore, the reference value may be an appropriate value indicating that the signal level from the PIN diode is high enough to be considered as collecting current from the incident electron beam contained within the beam spot. If comparator 736 determines that the voltage from capacitor 735 is higher than Vref1, it sends an output signal to block 750.

[0082]

[0095] Vref1 may be set so that each sensing element can be controlled to fall within the outer boundary of the beam spot. The value t_charge may be determined based on local logic or external circuitry, for example, via data line 752 communicating with block 750. The logic block and circuit components may be configured so that functions such as signal strength detection and pixel grouping determination can be performed locally. However, the signal strength of each sensing element may be collected and determination may be made via an external path. For example, the analog signal path and ADC may communicate with an external controller or external circuitry via analog signal line 722 and data line. For example, signal line 722 may connect to a preamplifier circuit 931, as described above with reference to FIG. 9.

[0083]

[0096] Each pixel in the sensing array may be associated with a sensing element, which generates a current based on electrons incident on the sensing element and communicates with signal processing circuitry. The pixels may be connected to circuitry such as described above with reference to a first pixel adapted to generate a PIN diode current 711. Accordingly, a second pixel may be adapted to generate a PIN diode current 712, and so on. The PIN diode current 712 may be connected to corresponding circuit elements, such as switch 721b, switch 731b, switch 741b, capacitor 735b, comparator 736b, block 750b, etc.

[0084]

[0097] Using the output current from the active sensing elements, the circuit layer may be adapted to generate a status indicator. The status indicator may be adapted to trigger a function for effecting pixel coupling. Various methods may be provided for achieving sensing element coupling.

[0085]

[0098] In one such method for combining pixels, combining of the sensing elements may be achieved according to a signal strength flag in a local logic circuit. If the signal strengths of the first pixel and the second pixel are strong, the two pixels may be combined. For example, the PIN diode current 711 and the PIN diode current 712 may both have high current values. That is, the voltage of the capacitor 735 and the voltage of the capacitor 735b may both be higher than Vref1. Then, the switch 767 is set to close to combine the two pixels.

[0086]

[0099] If the signal of at least one of the first pixel and the second pixel is weak, i.e., the voltage of capacitor 735 or capacitor 735b is less than Vref1, switch 767 is set to open so that the two pixels are not coupled.

[0087]

[0100] The switch 767 may be configured as an element for implementing a switch between two sensing elements. The switch 767 may be located on the sensor die 701. The switch 767 may be embedded in the sensor die 701. In some embodiments, the switch 767 may be provided outside the sensor die 701. The switch 767 may be configured as a transistor, such as a MOSFET.

[0088]

[0101] The criteria for determining the size of a section are discussed with reference to FIG.

[0089]

[0102] In some applications, a multi-beam device may be used to generate multiple beamlets. The beamlet pitch may be determined by the structure of the device 104, for example, the source conversion unit 212 as shown in FIG. 2. The beamlet pitch may be set based on various parameters. For example, the pitch may be set to ensure mechanical availability and mechanical stability, among other things. The more beamlets available, the higher the achievable inspection throughput. Therefore, charged particle beam systems with a high beamlet density may be used.

[0090]

[0103] Thus, multiple beams or beamlets may be incident on a detector surface. FIG. 13 illustrates a detector surface having multiple sensing elements and multiple beamlets incident thereon. For example, beamlets may be projected onto a sample and then received on a detector in an array pattern, such as a grid pattern. The grid pattern may be any shape. For example, the grid pattern may be square, rectangular, tiled, etc. Although four beamlet spots are shown in FIG. 13, embodiments of the present disclosure are not so limited. The square grid pattern of beamlet spots may be repeated arbitrarily.

[0091]

[0104] As shown in Figure 13, the beamlets are spaced apart to have a center-to-center distance in the first (horizontal) direction of A and a center-to-center distance in the second (vertical) direction of B. The values ​​of A and B may be equal.

[0092]

[0105] The detector may have multiple sections, as described above. For example, section 410 is shown, with the sensing elements associated with this section contained within the dashed box. The sections may be distributed uniformly across the surface of the detector.

[0093]

[0106] A criterion for determining the size of a section may be that the diagonal size of the section is smaller than the length of the smallest spacing between adjacent beam spots. For example, distance C may be set to be smaller than A. Therefore, under various different imaging conditions, e.g., due to varying alignment, beam shift, etc., at most one beam center may be included in one section. In this way, it may be ensured that there are sufficient signal processing circuits and signal paths to accommodate signal processing and readout of the beams projected onto an area of ​​the detector surface.

[0094]

[0107] As shown in FIGS. 14A-14C, under various conditions, sections sized to have a diagonal distance smaller than the minimum pitch of the beam spots can ensure that all beam spots are contained within their respective sections. For example, FIG. 14A shows a beam spot arrangement with a regular, fixed pitch indicated by dashed lines. FIG. 14B shows how no two beam spots can fit completely within a single section. The centers of two beam spots also cannot fit within a single section. FIG. 14C shows beam spots with the same pitch but larger sizes. Regardless of the beam spot size, at most one beam spot center can fit within a single section. Furthermore, even if the section arrangement is not aligned with the beam grid (e.g., if the grid pattern is rotated relative to the section arrangement), a situation in which two beam spot centers exist within a single section cannot occur. Thus, sensing elements associated with a single section can have output signals routed through the respective sections, which may have their own signal processing circuitry and wiring paths. Sensing elements that are grouped together for a beam spot can then have the signal for that beam spot routed through the signal processing circuitry of one of the sections with which the sensing elements in the group are associated, thus minimizing the length of the signal path for a beam spot, and may further improve bandwidth.

[0095]

[0108] It should be noted that, in some circumstances, activated sensing elements from two or more different beam spots may be included within a single section. However, due to pixel combining, for example, sensing elements covered by the same beam spot may be combined so that their outputs are processed together. For example, the section containing the center of the beam spot may be the section used to process all signals from activated sensing elements associated with a beam spot. Thus, sensing elements at the periphery of the beam spot may use a wiring path in another section than the one originally included in that section. Thus, sensing elements at the periphery of the beam spot may actually use a slightly longer wiring path than if they used the wiring path of the section stacked directly below them. In this way, the detector array can maintain flexibility. Thus, at a given time, the number of sensing elements associated with, and thereby processed by, a single section may be less than, equal to, or greater than the number of sensing elements that may be included within a given size of that section.

[0096]

[0109] The embodiments can be further described using the following clauses. Clause 1. A detector comprising: a substrate including a plurality of sensing elements; a plurality of sections including a first section connecting one or more sensing elements of the first plurality of sensing elements to a first output, and a second section connecting one or more sensing elements of the second plurality of sensing elements to a second output. Clause 2. The detector of clause 1, wherein the plurality of sections includes wiring paths and signal processing circuitry. Clause 3. A detector as described in any one of clauses 1 to 2, further comprising a plurality of circuits adapted to process the output of the plurality of sensing elements, a first circuit of the plurality of circuits being connected to the first section and a second circuit of the plurality of circuits being connected to the second section. Clause 4. The detector of clause 3, further comprising a switch disposed in a wiring path between each of the plurality of sensing elements and the plurality of circuits. Clause 5. A sensor die including a substrate; 5. The detector of any one of clauses 1 to 4, further comprising: a circuit die including one or more circuits adapted to process the output of the plurality of sensing elements. Clause 6. The detector of clause 5, wherein the sensor die and the circuit die are stacked together such that the first plurality of sensing elements are adjacent to the first section and the second plurality of sensing elements are adjacent to the second section. Clause 7. A detector according to any one of clauses 1 to 6, further comprising at least one switching region adapted to connect two or more of the plurality of sensing elements. Clause 8. The detector of clause 7, wherein the at least one switching region includes a switching region disposed between each of the plurality of sensing elements. Clause 9. The detector of clause 7, wherein in a cross-sectional view of the substrate, at least one switching region is integrated with two or more of the plurality of sensing elements. Clause 10. The detector of clause 7, wherein the switching region is within an active region of the plurality of sensing elements. Clause 11. The detector of clause 7, wherein the switching region is outside the active region of the plurality of sensing elements. Clause 12. A detector according to any one of clauses 1 to 11, wherein each of the plurality of sections comprises a signal processing path. Clause 13. The detector of clause 12, wherein the signal processing path includes an amplifier coupled to the data converter. Clause 14. A detection system comprising: a detector array including a plurality of sensing elements; a plurality of sections including a first section connecting the first plurality of sensing elements to a first output and a second section connecting the second plurality of sensing elements to a second output; and a detection system including an interface. Clause 15. The detection system of clause 14, wherein the plurality of sections includes wiring paths and signal processing circuitry. Clause 16. A detection system as described in any one of clauses 14 to 15, further comprising a plurality of circuits adapted to process the output of the plurality of sensing elements, a first circuit of the plurality of circuits being connected to the first section and a second circuit of the plurality of circuits being connected to the second section. Clause 17. The detection system of clause 16, further comprising a switch disposed in a wiring path between each of the plurality of sensing elements and the plurality of circuits. Clause 18. A detection system according to any one of clauses 14 to 17, wherein the interface comprises a digital switch matrix. Clause 19. A sensor die including a plurality of sensing elements; 19. The detection system of any one of clauses 14 to 18, further comprising: a circuit die including one or more circuits adapted to process the output of the plurality of sensing elements. Clause 20. The detection system of clause 19, wherein the sensor die and the circuit die are stacked together, whereby the first plurality of sensing elements are adjacent to the first section and the second plurality of sensing elements are adjacent to the second section. Clause 21. A detection system according to any one of clauses 14 to 20, further comprising at least one switching region adapted to connect two or more of the plurality of sensing elements. Clause 22. The detection system of clause 21, wherein the at least one switching region includes a switching region provided between each of the plurality of sensing elements. Clause 23. A detection system according to clause 21, wherein in a cross-sectional view of the detector, at least one switching region is integrated with two or more of the plurality of sensing elements. Clause 24. A detection system according to clause 21, wherein the switching region is within the active region of the plurality of sensing elements. Clause 25. A detector according to clause 21, wherein the switching region is outside the active region of the plurality of sensing elements. Clause 26. A detection system according to any one of clauses 14 to 25, wherein each of the plurality of sections comprises a signal processing path. Clause 27. The detection system of clause 18, wherein the signal processing path includes an amplifier coupled to the data converter. Clause 28. A detection system according to any one of clauses 14 to 27, wherein the interface is adapted to perform imaging control. Clause 29. A charged particle beam system comprising: a charged particle beam source adapted to generate a plurality of charged particle beams; 1. A detector adapted to receive a plurality of charged particle beams, comprising: a plurality of sensing elements; a detector including a plurality of sections, including a first section connecting a first plurality of sensing elements to a first output, and a second section connecting a second plurality of sensing elements to a second output. Clause 30. A charged particle beam system as described in clause 29, wherein the plurality of sections includes wiring paths and signal processing circuitry. Clause 31. A charged particle beam system as described in any one of clauses 29 to 30, further comprising a plurality of circuits adapted to process the output of the plurality of sensing elements, a first circuit of the plurality of circuits being connected to the first section and a second circuit of the plurality of circuits being connected to the second section. Clause 32. The charged particle beam system of clause 31, further comprising a switch disposed in a wiring path between each of the plurality of sensing elements and the plurality of circuits. Clause 33. A sensor die including a plurality of sensing elements; 33. The charged particle beam system of any one of clauses 29 to 32, further comprising: a circuit die including one or more circuits adapted to process the output of the plurality of sensing elements. Clause 34. A charged particle beam system as described in Clause 33, wherein the sensor die and the circuit die are stacked together, whereby the first plurality of sensing elements are adjacent to the first section and the second plurality of sensing elements are adjacent to the second section. Clause 35. A charged particle beam system according to any one of clauses 29 to 34, further comprising at least one switching region adapted to connect two or more of the plurality of sensing elements. Clause 36. A charged particle beam system as described in clause 35, wherein the at least one switching region includes a switching region provided between each of the plurality of sensing elements. Clause 37. A charged particle beam system as described in clause 35, wherein in a cross-sectional view of the detector, at least one switching region is integrated with two or more of the plurality of sensing elements. Clause 38. A charged particle beam system as described in clause 35, wherein the switching region is within an active region of the plurality of sensing elements. Clause 39. A charged particle beam system as described in clause 35, wherein the switching region is outside the active region of the plurality of sensing elements. Clause 40. A charged particle beam system according to any one of clauses 29 to 39, wherein each of the plurality of sections includes a signal processing path. Clause 41. A charged particle beam system as described in clause 40, wherein the signal processing path includes an amplifier coupled to a data converter. Clause 42. A charged particle beam system according to any one of clauses 29 to 41, wherein the multiple sections are dimensioned such that the diagonal distance of each section is smaller than the pitch of the multiple charged particle beams. Clause 43. A detector according to any one of clauses 1 to 13, wherein each of the first plurality of sensing elements is connected to the first output by a wiring path. Clause 44. A detector according to any one of clauses 1 to 13, wherein only one sensing element of the first plurality of sensing elements is connected to the first output by a wiring path.

[0097]

[0110] The block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer hardware / software products according to various exemplary embodiments of the present disclosure. In this regard, each block in the schematic diagrams may represent a specific arithmetic and / or logical operation that can be implemented using hardware, such as electronic circuits. The blocks may also represent modules, segments, or portions of code, including one or more executable instructions for performing the specified logical function(s). It should be understood that in some alternative implementations, the functions shown in the blocks may occur in an order other than that depicted in the figures. For example, two blocks shown in succession may be executed or performed substantially simultaneously, or the two blocks may sometimes be executed in the reverse order, depending on the functionality involved. Some blocks may also be omitted. It should be understood that each block of the block diagrams, and combinations of blocks, may be implemented by a special-purpose hardware-based system that performs the specified function(s) or operation(s), or by a combination of special-purpose hardware and computer instructions.

[0098]

[0111] It should be understood that the present invention is not limited to the exact configuration described above and illustrated in the accompanying drawings, and that various modifications and changes can be made without departing from the scope of the present invention. For example, while some exemplary embodiments discuss sections that are square in shape, other configurations such as triangular, hexagonal, etc. may be implemented. The sections may have shapes that are geometrically similar to the shapes of the sensing elements associated with them. The sensing elements themselves may be formed in shapes other than square or rectangular.

Claims

1. a substrate including a plurality of sensing elements; a plurality of adjacent sections having a substantially uniform size and shape, the first section connecting a first array of adjacent sensing elements of the plurality of sensing elements to a first output, and the second section connecting a second array of adjacent sensing elements of the plurality of sensing elements to a second output; A detector comprising: the first array of adjacent sensing elements is disposed in a first region of a surface of the substrate; the second array of adjacent sensing elements is disposed in a second region of the surface of the substrate; the first region is different from the second region; 10. The detector, further comprising: at least one switching region adapted to connect two or more of the plurality of sensing elements to couple and decouple the two or more of the plurality of sensing elements.

2. The detector of claim 1 , wherein the plurality of adjacent sections includes wiring paths and signal processing circuitry.

3. a plurality of circuits adapted to process outputs of the plurality of sensing elements; a first circuit of the plurality of circuits connected to the first section; The detector of claim 1 , wherein a second circuit of the plurality of circuits is connected to the second section.

4. The detector of claim 3 , further comprising a switch provided in a wiring path between each of the plurality of sensing elements and the plurality of circuits.

5. a sensor die including the substrate; a circuit die including one or more circuits adapted to process outputs of the plurality of sensing elements; The detector of claim 1 further comprising:

6. 6. The detector of claim 5, wherein the sensor die and the circuit die are stacked together such that the first adjacent array of sensing elements is adjacent to the first section and the second adjacent array of sensing elements is adjacent to the second section.

7. The detector of claim 1 , wherein the at least one switching region comprises a switching region disposed between each of the plurality of sensing elements.

8. The detector of claim 1 , wherein in a cross-sectional view of the substrate, the at least one switching region is integrated with the two or more of the plurality of sensing elements.

9. The detector of claim 1 , wherein the switching region is within an active region of the plurality of sensing elements.

10. The detector of claim 1 , wherein the switching region is outside of an active region of the plurality of sensing elements.

11. The detector of claim 1 , wherein each of the plurality of adjacent sections has a signal processing path.

12. The detector of claim 11 , wherein the signal processing path comprises an amplifier coupled to a data converter.

13. a plurality of sensing elements; a plurality of adjacent sections having a substantially uniform size and shape, the plurality of adjacent sections including a first section connecting a first array of adjacent sensing elements of the plurality of sensing elements to a first output, and a second section connecting a second array of adjacent sensing elements of the plurality of sensing elements to a second output; The interface and A detection system comprising: the first array of adjacent sensing elements is disposed in a first region of a surface of the detector, and the second array of adjacent sensing elements is disposed in a second region of the surface of the detector, the first region being different from the second region; 10. The detection system, further comprising: at least one switching region adapted to connect two or more of the plurality of sensing elements to couple and decouple the two or more of the plurality of sensing elements.

14. a sensor die including the plurality of sensing elements; a circuit die including one or more circuits adapted to process outputs of the plurality of sensing elements; The detection system of claim 13 further comprising:

Images