Power module and semiconductor device

Abstract

To facilitate the dissipation of heat generated in a semiconductor element.SOLUTION: A first wiring member (11) has a mounting surface (15) on which a semiconductor element (2) is mounted, and an exposed surface (16) that is exposed on the side opposite to the mounting surface (15). A second wiring member (12) is disposed at a distance from the first wiring member (11) in a direction perpendicular to the thickness direction of the first wiring member (11). A holding member (20) is disposed between the first wiring member (11) and the second wiring member (12) and holds the first wiring member (11) and the second wiring member (12). The holding member (20) includes a protrusion (22). The protrusion (22) protrudes from the exposed surface (16) toward the exposed surface (16) in the thickness direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a power module and a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses a power module including a power semiconductor element, a ceramic substrate that is a circuit board on which the power semiconductor element is mounted, and a heat dissipation fin on which the ceramic substrate is mounted using heat dissipation grease. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6234630 Summary of the Invention [Problem to be solved by the invention]

[0004] In the invention of Patent Document 1, a ceramic substrate is disposed between the power semiconductor element and the heat dissipation fin as an insulating heat dissipation member, which causes a problem that when heat generated by the power semiconductor element is dissipated, thermal resistance occurs in the insulating heat dissipation member, resulting in a decrease in heat dissipation performance.

[0005] An object of the present disclosure is to facilitate the dissipation of heat generated in a semiconductor element. [Means for solving the problem]

[0006] A first aspect of the present disclosure is a semiconductor device (2), a first wiring member (11) made of a conductive plate-like member and having a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the opposite side of the mounting surface (15), and a second wiring member (11) made of a conductive plate-like member and arranged at a distance from the first wiring member (11) in a direction perpendicular to the plate thickness direction of the first wiring member (11), and having an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring member (11). the power module includes: a second wiring member (12) that is disposed between the first wiring member (11) and the second wiring member (12), holds the first wiring member (11) and the second wiring member (12), and has an insulating holding member (20) that has a protrusion (22) that protrudes from the exposed surface (16) toward the exposed surface (16) in a plate thickness direction; and an insulating sealing material (36) that covers at least the semiconductor element (2) and the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12).

[0007] In the first aspect, heat generated in the semiconductor element 2 is directly dissipated from the exposed surface 16 of the first wiring member 11, thereby reducing thermal resistance. Furthermore, the provision of the protrusion 22 ensures a creepage insulation distance between the first wiring member 11 and the second wiring member 12.

[0008] In a second aspect of the present disclosure, in the power module of the first aspect, the end of the first wiring member (11) on the mounting surface (15) side of the holding member (20) is flush with the mounting surface (15) or is positioned closer to the exposed surface (16) than the mounting surface (15).

[0009] In the second aspect, the holding member (20) can be prevented from getting in the way when wire bonding the first wiring member (11) and the second wiring member (12). Also, the amount of holding member (20) used can be reduced.

[0010] A third aspect of the present disclosure is the power module of the first or second aspect, wherein the protrusion (22) has a shape that tapers toward a tip of the protrusion (22).

[0011] In the third aspect, heat generated in the semiconductor element (2) is dissipated so as to spread outward along the tapered shape of the protrusion (22), thereby reducing thermal resistance.

[0012] A fourth aspect of the present disclosure is the power module of any one of the first to third aspects, further comprising a connection terminal (13) formed integrally with the first wiring member (11).

[0013] In the fourth aspect, there is no need to perform a separate step of connecting the first wiring member (11) and the connection terminal (13), and the number of work steps can be reduced.

[0014] A fifth aspect of the present disclosure is a power module according to the fourth aspect, wherein the connection terminal (13) extends in a direction perpendicular to the thickness direction of the first wiring member (11) and includes an insulating member (25) provided on the connection terminal (13) on the exposed surface (16) side of the first wiring member (11).

[0015] In the fifth aspect, even if the connection terminal (13) is extended in a direction perpendicular to the thickness direction of the first wiring member (11), an insulating member (25) is provided on the connection terminal (13) on the exposed surface (16) of the first wiring member (11), thereby ensuring an insulating distance.

[0016] A sixth aspect of the present disclosure is a power module according to the fourth aspect, wherein the connection terminal (13) extends from the mounting surface (15) of the first wiring member (11) toward the mounting surface (15) in the thickness direction of the plate, and then extends in a direction perpendicular to the thickness direction of the first wiring member (11).

[0017] In the sixth aspect, the connection terminal (13) is bent multiple times and extended from the first wiring member (11), thereby making it possible to further increase the insulation distance.

[0018] A seventh aspect of the present disclosure is a power module according to any one of the fourth to sixth aspects, wherein a plurality of wiring layers (50) including the first wiring member (11) and the second wiring member (12) are provided at intervals in the thickness direction.

[0019] In the seventh aspect, by providing a plurality of wiring layers (50) at intervals in the thickness direction, the space in the thickness direction can be effectively utilized, thereby making it possible to reduce the size of the module.

[0020] An eighth aspect of the present disclosure is the power module of any one of the first to seventh aspects, further comprising a case (30) that covers the sealing material (36).

[0021] In the eighth aspect, the sealing material (36) is covered with the case (30), thereby protecting the semiconductor element (2).

[0022] A ninth aspect of the present disclosure is the power module of any one of the first to seventh aspects, wherein the sealing material (36) is formed of a molded resin, and the holding member (20) is molded integrally with the sealing material (36).

[0023] In the ninth aspect, by molding the holding member (20) integrally with the sealing material (36), it is not necessary to provide the holding member (20) as a separate member, and costs can be reduced.

[0024] A tenth aspect of the present disclosure is a semiconductor device comprising: a power module (10) according to any one of the first to ninth aspects; a heat sink (40) arranged to abut against the protrusion (22) of the holding member (20); and an insulating thermally conductive material (41) arranged between the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) and the heat sink (40).

[0025] In a tenth aspect, a semiconductor device can be provided that includes a power module (10), a heat sink (40), and a thermally conductive material (41). [Brief explanation of the drawings]

[0026] [Figure 1] FIG. 1 is a side cross-sectional view showing the configuration of the power module according to the first embodiment. [Figure 2] FIG. 2 is a side cross-sectional view showing the configuration of the semiconductor device. [Figure 3] FIG. 3 is a side cross-sectional view illustrating the creepage insulation distance of the comparative example. [Figure 4] FIG. 4 is a side cross-sectional view illustrating the creepage insulation distance when a protrusion is provided. [Figure 5] FIG. 5 is a side cross-sectional view showing the configuration of the protrusion according to the second embodiment. [Figure 6] FIG. 6 is a side cross-sectional view showing the configuration of the protrusion according to the third embodiment. [Figure 7] FIG. 7 is a side cross-sectional view showing the configuration of the protrusion according to the fourth embodiment. [Figure 8] FIG. 8 is a side cross-sectional view showing the configuration of a connection terminal according to the fifth embodiment. [Figure 9] FIG. 9 is a side cross-sectional view showing the configuration of a connection terminal according to the sixth embodiment. [Figure 10] FIG. 10 is a side cross-sectional view showing the configuration of a connection terminal according to the seventh embodiment. [Figure 11] FIG. 11 is a side cross-sectional view showing the configuration of a power module according to the eighth embodiment. [Figure 12] FIG. 12 is a side cross-sectional view showing the configuration of the semiconductor device. [Figure 13] FIG. 13 is a side cross-sectional view showing the configuration of the power module according to the ninth embodiment. [Figure 14] FIG. 14 is a side cross-sectional view showing the configuration of the semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0027] First Embodiment <Power Module> As shown in Figures 1 and 2, the power module (10) includes a semiconductor element (2), a first wiring member (11), a second wiring member (12), a holding member (20), a case (30), and a sealing material (36).

[0028] The first wiring member (11) is made of a conductive plate-like member. The first wiring member (11) has a mounting surface (15) and an exposed surface (16) that is exposed on the side opposite to the mounting surface (15). The semiconductor element (2) is mounted on the mounting surface (15) by solder (3).

[0029] The second wiring member (12) is made of a conductive plate-like member and is disposed at a distance from the first wiring member (11) in a direction perpendicular to the thickness direction of the first wiring member (11).

[0030] The second wiring member (12) has a mounting surface (15) and an exposed surface (16) that is exposed on the side opposite to the mounting surface (15). The exposed surface (16) of the second wiring member (12) is exposed on the same side as the exposed surface (16) of the first wiring member (11).

[0031] The semiconductor element (2) is, for example, an insulated gate bipolar transistor (IGBT), a diode, etc. In the example shown in Fig. 1, two semiconductor elements (2) are provided. The semiconductor elements (2) and the second wiring member (12) are connected by a wire (4).

[0032] One end of an external terminal 5 is electrically connected to the first wiring member 11 and the second wiring member 12. The other end of the external terminal 5 extends to protrude outside the case 30. The other end of the external terminal 5 is connected to a control board (not shown).

[0033] The holding member (20) is made of an insulating material and is disposed between the first wiring member (11) and the second wiring member (12). The holding member (20) holds the first wiring member (11) and the second wiring member (12).

[0034] The holding member (20) has a holding portion (21) and a protrusion (22). The holding portion (21) is disposed between the first wiring member (11) and the second wiring member (12). A protrusion (22) is provided on each end of the holding portion (21) in the vertical direction in FIG. 1. The protrusion (22) is integrally formed with the holding portion (21).

[0035] The protrusions 22 on the lower side in Fig. 1 protrude from the exposed surfaces 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surfaces 16 in the plate thickness direction. The protrusions 22 on the upper side in Fig. 1 protrude from the mounting surfaces 15 of the first wiring member 11 and the second wiring member 12 toward the mounting surfaces 15 in the plate thickness direction.

[0036] The case 30 is made of, for example, an insulating resin material. The case 30 covers the mounting surfaces 15 of the first wiring member 11 and the second wiring member 12 to define an internal space 35. A sealant 36 is sealed in the internal space 35 of the case 30. The sealant 36 is covered by the case 30.

[0037] The case 30 has a facing portion 31 and a peripheral wall portion 32. The facing portion 31 faces the mounting surfaces 15 of the first wiring member 11 and the second wiring member 12. The peripheral wall portion 32 extends along the periphery of the facing portion 31 toward the first wiring member 11 and the second wiring member 12. A stepped surface 33 is provided on the inner periphery of the peripheral wall portion 32 of the case 30.

[0038] The sealing material 36 includes an insulating material, such as a resin material, and covers the semiconductor element 2, the mounting surface 15 of the first wiring member 11, the mounting surface 15 of the second wiring member 12, and the wire 4.

[0039] 1, the left end of the first wiring member (11) located at the left end and the right end of the second wiring member (12) located at the right end are each supported by an insulating member (25). The insulating member (25) protrudes from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the plate thickness direction by the same length as the protrusions (22) of the holding member (20). The insulating member (25) abuts against the stepped surface (33) of the case (30).

[0040] In the power module 10 configured in this manner, heat generated in the semiconductor element 2 can be dissipated directly from the exposed surface 16 of the first wiring member 11. Furthermore, by providing the protrusions 22, it is possible to ensure a creepage insulation distance between the first wiring member 11 and the second wiring member 12.

[0041] Specifically, in the comparative example shown in FIG. 3, the holding member (20) does not have a protrusion (22), and the creepage insulation distance L′ between the first wiring member (11) and the second wiring member (12) is the length of the gap between the first wiring member (11) and the second wiring member (12).

[0042] On the other hand, as shown in FIG. 4, when a protrusion (22) is provided on the holding member (20), the creepage insulation distance L between the first wiring member (11) and the second wiring member (12) is the length from the first wiring member (11) to the second wiring member (12) along the outer peripheral surface of the protrusion (22), and L>L'.

[0043] Semiconductor Devices As shown in FIG. 2, the semiconductor device (1) includes a power module (10), a heat sink (40), and a thermally conductive material (41).

[0044] The heat radiator (40) is made of a heat conductive material such as copper or aluminum. The heat radiator (40) is arranged to abut against the protrusions (22) of the holding member (20) of the power module (10) and the insulating member (25). The power module (10) is fastened to the heat radiator (40) by, for example, fastening screws (not shown).

[0045] The thermally conductive material (41) has insulating properties. The thermally conductive material (41) is, for example, grease. The thermally conductive material (41) is disposed between the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) and the heat sink (40). In this case, the thickness of the thermally conductive material (41) can be set according to the protrusion amount of the protrusion (22). The first wiring member (11) and the second wiring member (12) are in thermal contact with the heat sink (40) via the thermally conductive material (41).

[0046] -Effects of the first embodiment- According to the features of this embodiment, heat generated in the semiconductor element 2 is directly dissipated from the exposed surface 16 of the first wiring member 11, thereby reducing thermal resistance. In addition, the provision of the protrusions 22 ensures a creepage insulation distance between the first wiring member 11 and the second wiring member 12.

[0047] According to the feature of this embodiment, the semiconductor element (2) can be protected by covering the sealing material (36) with the case (30).

[0048] According to the features of this embodiment, it is possible to provide a semiconductor device including a power module (10), a heat sink (40), and a thermally conductive material (41).

[0049] Second Embodiment Hereinafter, the same parts as those in the first embodiment will be denoted by the same reference numerals, and only the differences will be described.

[0050] As shown in Fig. 5, the holding member (20) has a holding portion (21) and a protrusion (22). The holding portion (21) is disposed between the first wiring member (11) and the second wiring member (12). The holding portion (21) has a protrusion (22) at the end on the lower side in Fig. 1. The protrusion (22) is formed integrally with the holding portion (21).

[0051] The protrusions (22) protrude from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the plate thickness direction.

[0052] 1, the upper end of the holding portion 21 does not have a protrusion 22, and therefore the end of the holding member 20 on the mounting surface 15 side of the first wiring member 11 is flush with the mounting surface 15. Here, the mounting surface 15 sides of the first wiring member 11 and the second wiring member 12 are sealed with the sealing material 36, and therefore, the creepage insulation distance between the first wiring member 11 and the second wiring member 12 can be ensured even on the mounting surface 15 side.

[0053] -Effects of the second embodiment- According to the features of this embodiment, the holding member (20) can be prevented from getting in the way when wire bonding the first wiring member (11) and the second wiring member (12). Also, the amount of holding member (20) used can be reduced.

[0054] Third Embodiment As shown in Fig. 6, the holding member (20) has a holding portion (21) and a protrusion (22). The holding portion (21) is disposed between the first wiring member (11) and the second wiring member (12). A protrusion (22) is provided on each end of the holding portion (21) in the vertical direction in Fig. 1. The protrusion (22) is integrally formed with the holding portion (21).

[0055] The upper protrusion 22 in FIG. 1 protrudes from the mounting surface 15 of the first wiring member 11 and the second wiring member 12 toward the mounting surface 15 in the plate thickness direction.

[0056] 1, the lower protrusion 22 protrudes from the exposed surface 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surface 16 in the plate thickness direction. The lower protrusion 22 has a tapered shape toward the tip of the protrusion 22.

[0057] -Effects of the third embodiment- According to the feature of this embodiment, heat generated in the semiconductor element (2) is dissipated so as to spread outward along the tapered shape of the protrusion (22), thereby reducing thermal resistance.

[0058] Fourth Embodiment 7, the holding member 20 has a protrusion 22. The protrusion 22 protrudes from the exposed surface 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surface 16 in the plate thickness direction. In this manner, the protrusion 22 is disposed closer to the exposed surface 16 than the mounting surface 15 of the first wiring member 11 and the second wiring member 12.

[0059] -Effects of the fourth embodiment- According to the features of this embodiment, the holding member (20) can be prevented from getting in the way when wire bonding the first wiring member (11) and the second wiring member (12). Also, the amount of holding member (20) used can be reduced.

[0060] Fifth Embodiment As shown in FIG. 8, the first wiring member (11) has a connection terminal (13). The connection terminal (13) is formed integrally with the first wiring member (11). The connection terminal (13) extends in the thickness direction of the first wiring member (11) (upward in FIG. 8). The connection terminal (13) penetrates the opposing portion (31) of the case (30). The connection terminal (13) is connected to a control board (not shown).

[0061] An insulating member 25 is provided on the connection terminal 13 on the side of the exposed surface 16 of the first wiring member 11. The insulating member 25 supports the connection terminal 13. The insulating member 25 abuts against the heat radiator 40.

[0062] -Effects of the fifth embodiment- According to the feature of this embodiment, by forming the first wiring member (11) and the connection terminal (13) integrally, there is no need to perform a separate process of connecting the first wiring member (11) and the connection terminal (13), thereby reducing the amount of work required.

[0063] Sixth Embodiment As shown in Fig. 9, the first wiring member 11 has a connection terminal 13. The connection terminal 13 is integrally formed with the first wiring member 11. The connection terminal 13 extends in a direction perpendicular to the thickness direction of the first wiring member 11. After penetrating the peripheral wall portion 32 of the case 30, the connection terminal 13 extends in the thickness direction of the first wiring member 11 (upward in Fig. 9).

[0064] An insulating member 25 is provided on the connection terminal 13 on the side of the exposed surface 16 of the first wiring member 11. The insulating member 25 supports the connection terminal 13. The insulating member 25 abuts against the heat radiator 40.

[0065] -Effects of the sixth embodiment- According to the feature of this embodiment, by forming the first wiring member (11) and the connection terminal (13) integrally, there is no need to perform a separate process of connecting the first wiring member (11) and the connection terminal (13), thereby reducing the amount of work required.

[0066] According to the features of this embodiment, even if the connection terminal (13) is extended in a direction perpendicular to the thickness direction of the first wiring member (11), the insulating member (25) provided on the connection terminal (13) on the exposed surface (16) of the first wiring member (11) ensures an insulating distance between the connection terminal (13) and the heat sink (40).

[0067] Seventh Embodiment As shown in Fig. 10, the first wiring member (11) has a connection terminal (13). The connection terminal (13) is formed integrally with the first wiring member (11). The connection terminal (13) extends from the mounting surface (15) of the first wiring member (11) toward the mounting surface (15) in the plate thickness direction, and then extends in a direction perpendicular to the plate thickness direction of the first wiring member (11). The connection terminal (13) penetrates the peripheral wall portion (32) of the case (30), and then extends in the plate thickness direction of the first wiring member (11) (upward in Fig. 10).

[0068] An insulating member 25 is provided on the connection terminal 13 on the side of the exposed surface 16 of the first wiring member 11. The insulating member 25 supports the connection terminal 13. The insulating member 25 abuts against the heat radiator 40.

[0069] -Effects of the seventh embodiment- According to the feature of this embodiment, the connection terminal (13) is bent multiple times and extended from the first wiring member (11), thereby further increasing the insulation distance between the connection terminal (13) and the heat sink (40).

[0070] Eighth Embodiment 11 and 12, the power module 10 includes a semiconductor element 2, a first wiring member 11, a second wiring member 12, a holding member 20, and a sealing material 36. The second wiring member 12 is disposed at a distance from the first wiring member 11 in a direction perpendicular to the thickness direction of the first wiring member 11.

[0071] The first wiring member 11 located at the left end in Fig. 11 has a connection terminal 13. The connection terminal 13 is formed integrally with the first wiring member 11. The connection terminal 13 extends in the thickness direction of the first wiring member 11 (upward in Fig. 11).

[0072] The second wiring member 12 located at the right end in Fig. 12 has a connection terminal 13. The connection terminal 13 is formed integrally with the second wiring member 12. The connection terminal 13 extends in the thickness direction of the second wiring member 12 (upward in Fig. 11).

[0073] The sealing material 36 is made of a mold resin and covers the semiconductor element 2, the mounting surface 15 of the first wiring member 11, the mounting surface 15 of the second wiring member 12, and the wire wiring 4.

[0074] The holding member 20 is molded integrally with the sealing material 36. Specifically, when the sealing material 36 is molded, the sealing material 36 is caused to protrude from the gap between the first wiring member 11 and the second wiring member 12, thereby forming the holding member 20 integrally with the sealing material 36.

[0075] The holding member 20 has a protrusion 22. The protrusion 22 protrudes from the exposed surfaces 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surfaces 16 in the plate thickness direction.

[0076] -Effects of embodiment 8- According to a feature of this embodiment, by molding the holding member (20) integrally with the sealing material (36), it is not necessary to provide the holding member (20) as a separate member, and costs can be reduced.

[0077] Ninth Embodiment 13 and 14, the power module 10 includes a plurality of wiring layers 50. The plurality of wiring layers 50 are provided at intervals in the thickness direction. The wiring layers 50 include a first wiring layer 51 and a second wiring layer 52.

[0078] The first wiring layer 51 includes a first wiring member 11, a second wiring member 12, a semiconductor element 2, and a wire 4. The first wiring member 11 and the second wiring member 12 include connection terminals 13.

[0079] The second wiring layer 52 includes a first wiring member 11, a second wiring member 12, a semiconductor element 2, an electronic component 6, and a wire 4. The first wiring member 11 and the second wiring member 12 include connection terminals 13.

[0080] The electronic component (6) is, for example, a resistor, a capacitor, an inductor, a thermistor, etc. The electronic component (6) straddles the first wiring member (11) and the second wiring member (12) and is electrically connected by solder (3).

[0081] The first wiring member (11) or the second wiring member (12) of the first wiring layer (51) and the first wiring member (11) or the second wiring member (12) of the second wiring layer (52) are electrically connected by a conductive member (53).

[0082] The mounting surface (15) side of the first wiring layer (51) and the mounting surface (15) side and exposed surface (16) side of the second wiring layer (52) are sealed with a sealing material (36). The sealing material (36) is made of molded resin. The sealing material (36) is not provided on the exposed surface (16) side of the first wiring layer (51), and the exposed surface (16) of the first wiring layer (51) is exposed.

[0083] The holding member 20 is molded integrally with the sealing material 36. Specifically, when the sealing material 36 is molded, the sealing material 36 is caused to protrude from the gap between the first wiring member 11 and the second wiring member 12, thereby forming the holding member 20 integrally with the sealing material 36.

[0084] The holding member 20 has a protrusion 22. The protrusion 22 protrudes from the exposed surfaces 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surfaces 16 in the plate thickness direction.

[0085] -Effects of the 9th embodiment- According to the feature of this embodiment, by providing a plurality of wiring layers (50) at intervals in the thickness direction, the space in the thickness direction can be effectively utilized, thereby enabling the module to be made smaller.

[0086] Other Embodiments Although the embodiments and modifications have been described above, it will be understood that various modifications in form and detail are possible without departing from the spirit and scope of the claims. Furthermore, elements of the above embodiments, modifications, and other embodiments may be combined or substituted as appropriate. Furthermore, the terms "first," "second," "third," etc. in the specification and claims are used to distinguish between terms to which these terms are attached, and do not limit the number or order of those terms. [Industrial Applicability]

[0087] As described above, the present disclosure is useful for power modules and semiconductor devices. [Explanation of symbols]

[0088] 1. Semiconductor device 2. Semiconductor elements 10 Power Module 11 First wiring member 12 Second wiring member 13 Connection terminal 15 Mounting surface 16 Exposed surface 20 Retaining member 22 protrusion 25 Insulating material 30 cases 36 Encapsulating material 40 Heat sink 41 Thermal Conductive Materials 50 wiring layers

Claims

1. A semiconductor element (2); a first wiring member (11) made of a conductive plate-like member, the first wiring member having a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the side opposite to the mounting surface (15); a second wiring member (12) made of a conductive plate-like member, arranged at an interval from the first wiring member (11) in a direction perpendicular to the plate thickness direction of the first wiring member (11), and having an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring member (11); an insulating holding member (20) that is disposed between the first wiring member (11) and the second wiring member (12), holds the first wiring member (11) and the second wiring member (12), and has a protrusion (22) that protrudes from the exposed surface (16) toward the exposed surface (16) in a plate thickness direction; an insulating sealing material (36) that covers at least the semiconductor element (2) and the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12); The sealing material (36) and the holding member (20) are separate members. Power module.

2. A semiconductor element (2); a first wiring member (11) made of a conductive plate-like member, the first wiring member having a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the side opposite to the mounting surface (15); a second wiring member (12) made of a conductive plate-like member, arranged at an interval from the first wiring member (11) in a direction perpendicular to the plate thickness direction of the first wiring member (11), and having an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring member (11); an insulating holding member (20) that is disposed between the first wiring member (11) and the second wiring member (12), holds the first wiring member (11) and the second wiring member (12), and has a protrusion (22) that protrudes from the exposed surface (16) toward the exposed surface (16) in a plate thickness direction; an insulating sealing material (36) that covers at least the semiconductor element (2) and the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12); The end of the first wiring member (11) on the mounting surface (15) side of the holding member (20) is flush with the mounting surface (15) or is disposed closer to the exposed surface (16) than the mounting surface (15). Power module.

3. A semiconductor element (2); a first wiring member (11) made of a conductive plate-like member, the first wiring member having a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the side opposite to the mounting surface (15); a second wiring member (12) made of a conductive plate-like member, arranged at an interval from the first wiring member (11) in a direction perpendicular to the plate thickness direction of the first wiring member (11), and having an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring member (11); an insulating holding member (20) that is disposed between the first wiring member (11) and the second wiring member (12), holds the first wiring member (11) and the second wiring member (12), and has a protrusion (22) that protrudes from the exposed surface (16) toward the exposed surface (16) in a plate thickness direction; an insulating sealing material (36) that covers at least the semiconductor element (2) and the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12); When viewed from the plate thickness direction, a part of the protrusion (22) overlaps with the first wiring member (11) and the second wiring member (12). Power module.

4. The power module according to any one of claims 1 to 3, The protrusion (22) has a tapered shape toward the tip of the protrusion (22). Power module.

5. The power module according to any one of claims 1 to 3, A connection terminal (13) is provided which is integrally formed with the first wiring member (11). Power module.

6. 6. The power module of claim 5, The connection terminal (13) extends in a direction perpendicular to the thickness direction of the first wiring member (11), an insulating member (25) provided on the exposed surface (16) side of the first wiring member (11) in the connection terminal (13); Power module.

7. 6. The power module of claim 5, The connection terminal (13) extends from the mounting surface (15) of the first wiring member (11) toward the mounting surface (15) in the plate thickness direction, and then extends in a direction perpendicular to the plate thickness direction of the first wiring member (11). Power module.

8. 6. The power module of claim 5, A plurality of wiring layers (50) including the first wiring member (11) and the second wiring member (12) are provided at intervals in the plate thickness direction. Power module.

9. The power module according to any one of claims 1 to 3, A case (30) is provided to cover the sealing material (36). Power module.

10. A power module (10) according to any one of claims 1 to 3; a radiator (40) arranged to abut on the protrusion (22) of the holding member (20); an insulating heat-conducting material (41) disposed between the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) and the radiator (40). Semiconductor device.

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