Semiconductor Devices

Abstract

To provide a semiconductor device capable of suppressing an increase in the heat resistance of a semiconductor element, and achieving reductions in size and cost.SOLUTION: A semiconductor device comprises: a first lead frame; a first semiconductor element connected to the first lead frame; a third lead frame provided with a third first surface; a second lead frame; a second semiconductor element connected to the second lead frame; a first connection part bonded to the first semiconductor element; a second connection part bonded to the third first surface; a first plate-like lead provided with a first coupling part by coupling the first connection part and the second connection part; a third connection part bonded to the second semiconductor element; a fourth connection part bonded to the third first surface; and a second plate-like lead provided with a second coupling part by coupling the third connection part and the fourth connection part. In a view of a Z direction, both of a position range of a Y direction of the first semiconductor element and a position range of the Y direction of the second semiconductor element are overlapped in at least one part, and the second connection part and the fourth connection part are arranged in the Y direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present application relates to a semiconductor device. [Background technology]

[0002] Due to recent environmental regulations and technological advances surrounding automobiles, electric vehicles and hybrid vehicles of various sizes have been developed and are becoming increasingly popular. Electric vehicles that use a motor as a drive source, such as hybrid vehicles and electric vehicles, are equipped with multiple devices that convert input current from DC to AC, AC to DC, or input voltage to a different voltage.

[0003] For example, a DC / DC converter, one of the above-mentioned devices, is installed in an electric vehicle to charge a low-voltage lead battery from a high-voltage lithium-ion battery. The high-voltage lithium-ion battery is insulated from the chassis or low-voltage system to protect it from voltage. A DC / DC converter also generally requires an isolation transformer to isolate the high-voltage input side from the low-voltage output side. In a DC / DC converter, a direct current input voltage is converted into an alternating current (AC) signal by switching using semiconductor devices or the like, and the converted signal is input to the primary side of the isolation transformer. The output from the secondary side of the isolation transformer is rectified using semiconductor devices or the like, smoothed by a smoothing reactor, and then output from the DC / DC converter as a direct current output voltage.

[0004] Isolated DC / DC converters mounted on electric or hybrid vehicles handle large currents of kW class or more, so they generally use multiple semiconductor elements for rectification. The configuration of an isolated transformer connected to semiconductor elements used for rectification has been disclosed (see, for example, Patent Document 1). The isolated transformer has a winding that circles the same core, with coil terminals positioned at positions that extend to the left and right from the center of the core. The semiconductor elements are arranged side-by-side in the wide area of ​​the coil terminals that extend to the left and right. Also disclosed is the configuration of a miniaturized semiconductor device that integrates multiple semiconductor elements and is connected to an isolated transformer or the like (see, for example, Patent Document 2). In the semiconductor device, bottom electrodes P are provided on the outer sides of two bottom electrodes M, respectively, and linear wiring extends from the semiconductor elements mounted on the bottom electrodes P to the bottom electrodes M. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 6987196 [Patent Document 2] Patent Publication No. 2021-141222 Summary of the Invention [Problem to be solved by the invention]

[0006] In the structure of the isolation transformer disclosed in Patent Document 1, semiconductor elements can be connected to the coil terminals of the isolation transformer. However, because the semiconductor elements are arranged in a wide area on both sides of the center of the core and connected to the coil terminals, there is a problem in that the overall size of the device increases.

[0007] The semiconductor device structure described in Patent Document 2 allows a semiconductor element to be mounted on two adjacent electrodes. However, because the wiring extends linearly from the semiconductor element mounted on the bottom electrode P, the bottom electrode M connected by the wiring branches into two, resulting in a problem of increased size. Even if two bottom electrodes M are combined into one, this wiring structure requires the placement of connection parts connected to the wiring extending from the left and right semiconductor elements. This results in the bottom electrode M expanding to a width equal to or greater than two connection parts, resulting in a problem of increased size. Furthermore, by arranging the semiconductor elements in a staggered pattern, the connection parts connected to the wiring are also arranged in a staggered pattern, thereby suppressing the increase in the width of the bottom electrode M. However, because the semiconductor element located at the end of the staggered arrangement is closer to the end of the bottom electrode, a sufficient area of ​​the bottom electrode contributing to cooling cannot be secured, resulting in an increase in the thermal resistance of the semiconductor element. Furthermore, these problems result in an increase in the size of the entire system including the semiconductor element and its connected components, which in turn results in an increase in cost.

[0008] Therefore, an object of the present invention is to provide a semiconductor device that is miniaturized and inexpensive, while suppressing an increase in the thermal resistance of a semiconductor element. [Means for solving the problem]

[0009] The semiconductor device disclosed in the present application includes a first lead frame having conductivity, a first semiconductor element electrically and thermally connected to a first first surface of the first lead frame, the first lead frame and the third first surface being arranged side by side with a gap therebetween and on the same side as the first first surface, a third lead frame having conductivity, the third lead frame and the second first surface being arranged side by side with a gap therebetween and on the opposite side of the third lead frame from the first lead frame side and on the same side as the first first surface, a second lead frame having conductivity, the second semiconductor element electrically and thermally connected to the second first surface of the second lead frame, a first connection portion bonded via a bonding member to the surface of the first semiconductor element opposite to the first lead frame side, and a second connection portion bonded via a bonding member to the third first surface. a conductive first plate-like lead having a second connection portion and a first linking portion linking the first and second connection portions, a third connection portion joined via a bonding member to the surface of the second semiconductor element opposite the second lead frame side, a fourth connection portion joined via a bonding member to the third first surface, and a conductive second plate-like lead having a second linking portion linking the third and fourth connection portions, wherein the direction in which the first lead frame, the third lead frame, and the second lead frame are arranged is defined as the X direction, the direction parallel to the third first surface and perpendicular to the X direction is defined as the Y direction, and the direction perpendicular to the X and Y directions is defined as the Z direction, and when viewed in the Z direction, the positional range of the first semiconductor element in the Y direction and the positional range of the second semiconductor element in the Y direction at least partially overlap, and the second connection portion and the fourth connection portion are arranged in the Y direction. [Effects of the Invention]

[0010] According to the semiconductor device disclosed herein, the Y-direction positional range of the first semiconductor element and the Y-direction positional range of the second semiconductor element at least partially overlap when viewed in the Z direction, and the second connecting portion and the fourth connecting portion are aligned in the Y direction. This allows the width of the third lead frame to be reduced to a width that allows connection equal to one of the widths of the second connecting portion or the fourth connecting portion, thereby enabling miniaturization and cost reduction of the semiconductor device. Furthermore, the spacing between the first semiconductor element and the second semiconductor element is reduced, enabling miniaturization and cost reduction of the semiconductor device. Furthermore, the distance between the semiconductor element and the end of the lead frame and the distance between semiconductor elements arranged on the same lead frame are not significantly reduced, eliminating differences in the thermal resistance (heat dissipation to the lead frame) of the semiconductor elements depending on their arrangement. This reduces the effects of thermal interference from other semiconductor elements, thereby suppressing increases in the thermal resistance of the first semiconductor element and the second semiconductor element. Since an increase in the thermal resistance of the first semiconductor element and the second semiconductor element is suppressed, it is possible to reduce the size and cost of the semiconductor device by switching to a cheaper, smaller-sized semiconductor element and by miniaturizing the lead frame. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view showing an outline of the configuration of a semiconductor device according to a first embodiment. [Figure 2] 2 is a cross-sectional view showing an outline of the semiconductor device taken along the line AA in FIG. 1. [Figure 3] 2 is a plan view showing a first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 4] 4 is a cross-sectional view of the first plate-shaped lead taken along the line BB in FIG. 3. [Figure 5] 10 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 6] 10 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 7] 10 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 8]10 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 9] 10 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 10] 10 is a cross-sectional view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. [Figure 11] 10 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 12] 10 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 13] 10 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 14] 10 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 15] 10 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 16] 10 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 17] 10 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 18] 10 is a cross-sectional view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 19] 10 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 20] 10 is a plan view showing another first plate-like lead of the semiconductor device according to the first embodiment. FIG. [Figure 21] 10 is a plan view showing an outline of the configuration of another semiconductor device according to the first embodiment. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding members and parts are denoted by the same reference numerals.

[0013] Embodiment 1 FIG. 1 is a plan view showing an outline of the configuration of a semiconductor device 1 according to a first embodiment. FIG. 2 is a cross-sectional view showing an outline of the semiconductor device 1 taken along the AA cross section of FIG. 1. FIG. 3 is a plan view showing a first plate-like lead 3 of the semiconductor device 1. FIG. 4 is a cross-sectional view of the first plate-like lead 3 taken along the BB cross section of FIG. 3. FIG. 5 is a plan view showing an outline of another semiconductor device 1 according to the first embodiment. In FIGS. 1, 2, and 5, the resin member 6 is removed, and only the outline of the resin member 6 is shown. While FIGS. 3 and 4 show only the first plate-like lead 3, in the present embodiment shown in FIG. 1, the first plate-like lead 3 and the second plate-like lead 4 have the same shape. The semiconductor device 1 is a device that rectifies current by the operation of a first semiconductor element 21 and a second semiconductor element 22. However, the semiconductor device 1 is not limited to this, and may be a device that converts power by the switching operation of the first semiconductor element 21 and the second semiconductor element 22.

[0014] <Semiconductor device 1> The configuration of the semiconductor device 1 will be described. As shown in FIG. 1 , the semiconductor device 1 includes a first lead frame 11, a second lead frame 12, a third lead frame 13, a first semiconductor element 21, a second semiconductor element 22, a first plate-like lead 3, and a second plate-like lead 4. In this embodiment, the semiconductor device 1 includes two first semiconductor elements 21 and two second semiconductor elements 22. However, the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 is not limited to two and may be one, three, or more. The number of semiconductor elements can be increased or decreased depending on the current handled by the semiconductor device 1, thereby enabling the semiconductor device 1 to be configured at low cost depending on the power. The first lead frame 11, the second lead frame 12, the third lead frame 13, the first plate-like lead 3, and the second plate-like lead 4 are made of a metal material such as copper or aluminum, which has excellent electrical and thermal conductivity.

[0015] The first lead frame 11 is electrically conductive, and the first semiconductor element 21 is electrically and thermally connected to the first first surface 11b1 of the first lead frame 11 by a bonding member 7 such as solder. The third lead frame 13 is arranged adjacent to the first lead frame 11 at a distance, has a third first surface 13b1 on the same side as the first first surface 11b1, and is electrically conductive. The second lead frame 12 is arranged adjacent to the third lead frame 13 at a distance, on the opposite side of the first lead frame 11 from the third lead frame 13, has a second first surface 12b1 on the same side as the first first surface 11b1, and is electrically conductive. The second semiconductor element 22 is electrically and thermally connected to the second first surface 12b1 of the second lead frame 12 by a bonding member 7 such as solder.

[0016] The first plate-like lead 3 is conductive and includes a first connection portion 31, a second connection portion 32, and a first linking portion 35 that links the first connection portion 31 and the second connection portion 32. The first connection portion 31 is bonded to a surface of the first semiconductor element 21 opposite the first lead frame 11 via a bonding member 7. The second connection portion 32 is bonded to the third first surface 13b1 via the bonding member 7. The second plate-like lead 4 is conductive and includes a third connection portion 41, a fourth connection portion 42, and a second linking portion 45 that links the third connection portion 41 and the fourth connection portion 42. The third connection portion 41 is bonded to a surface of the second semiconductor element 22 opposite the second lead frame 12 via the bonding member 7. The fourth connection portion 42 is bonded to the third first surface 13b1 via the bonding member 7. The bonding member 7 is, for example, solder.

[0017] The direction in which the first lead frame 11, the third lead frame 13, and the second lead frame 12 are arranged is the X direction, the direction parallel to the third first surface 13b1 and perpendicular to the X direction is the Y direction, and the direction perpendicular to the X and Y directions is the Z direction. When viewed in the Z direction, the positional range of the first semiconductor element 21 in the Y direction and the positional range of the second semiconductor element 22 in the Y direction at least partially overlap, and the second connecting portion 32 and the fourth connecting portion 42 are arranged in the Y direction. In FIG. 1, when viewed in the Z direction, the Y direction positions of the center of the first semiconductor element 21 in the Y direction and the center of the second semiconductor element 22 in the Y direction coincide with each other. 5, a configuration may be adopted in which, when viewed in the Z direction, the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 do not coincide in Y-direction position, and the Y-direction positional range of the first semiconductor element 21 and the Y-direction positional range of the second semiconductor element 22 partially overlap. In addition, in FIG. 1, the second connection portion 32 and the fourth connection portion 42 are arranged with a gap in the Y direction, but this is not limiting, and the second connection portion 32 and the fourth connection portion 42 may be arranged in contact with each other in the Y direction.

[0018] With this configuration, the first semiconductor element 21 and the second semiconductor element 22 are arranged side by side in the X direction with the Y-direction positional range of the first semiconductor element 21 and the Y-direction positional range of the second semiconductor element 22 at least partially overlapping, and the second connecting portion 32 and the fourth connecting portion 42 are arranged side by side in the Y direction, so that the distance between the first semiconductor element 21 and the second semiconductor element 22 can be reduced. Since the distance between the first semiconductor element 21 and the second semiconductor element 22 is reduced, the semiconductor device 1 can be made smaller and less expensive. Furthermore, since it is not necessary to arrange the first semiconductor element 21 and the second semiconductor element 22 in a staggered pattern, the expansion of each lead frame is suppressed, and the semiconductor device 1 can be made smaller and less expensive.

[0019] Furthermore, if the semiconductor elements were arranged in a staggered pattern without changing the size of each lead frame, the distance between the semiconductor element and the edge of the lead frame and the distance between semiconductor elements arranged on the same lead frame would be shortened. However, with the above-described configuration, the distance between the semiconductor element and the edge of the lead frame and the distance between semiconductor elements arranged on the same lead frame are not significantly shortened, so there is no difference in the thermal resistance (heat dissipation to the lead frame) of the semiconductor elements depending on the arrangement of the semiconductor elements. This reduces the effects of thermal interference from other semiconductor elements, thereby suppressing an increase in the thermal resistance of first semiconductor element 21 and second semiconductor element 22. Because an increase in the thermal resistance of first semiconductor element 21 and second semiconductor element 22 is suppressed, it is possible to switch to cheaper, smaller-sized semiconductor elements and reduce the size of the lead frame, thereby reducing the size and cost of semiconductor device 1.

[0020] Furthermore, since the second connection portion 32 and the fourth connection portion 42 are aligned in the Y direction, the width of the third lead frame 13 can be reduced to a width that allows one of the widths of the second connection portion 32 or the fourth connection portion 42 to be connected, thereby making it possible to reduce the size and cost of the semiconductor device 1.

[0021] Furthermore, by arranging the first semiconductor element 21 and the second semiconductor element 22 near the center of the first lead frame 11 and the second lead frame 12, respectively, heat loss generated by the first semiconductor element 21 and the second semiconductor element 22 can be dissipated highly efficiently using the entire first lead frame 11 and the second lead frame 12. Because heat loss generated by the first semiconductor element 21 and the second semiconductor element 22 is dissipated highly efficiently, the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is reduced, and the sizes of the first semiconductor element 21 and the second semiconductor element 22 and the first lead frame 11 and the second lead frame 12 can be reduced. Because the sizes of the first semiconductor element 21 and the second semiconductor element 22 and the first lead frame 11 and the second lead frame 12 are reduced, the semiconductor device 1 can be made smaller and less expensive.

[0022] Furthermore, when viewed in the Z direction, if the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 are aligned in position in the Y direction, the distance of the first semiconductor element 21 from the end of the first lead frame 11 can be made equal to the distance of the second semiconductor element 22 from the end of the second lead frame 12. Since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are made equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0023] Next, a configuration in which the semiconductor device 1 includes an insulating heat dissipation member 5 and a resin member 6 will be described. In this embodiment, a first lead frame 11, a second lead frame 12, a third lead frame 13, a first semiconductor element 21, a second semiconductor element 22, a first plate-like lead 3, and a second plate-like lead 4 are sealed with an insulating resin member 6. Portions of the first lead frame 11, the second lead frame 12, and the third lead frame 13 that are connected to the outside are exposed from the resin member 6. The resin member 6 is, for example, an epoxy resin.

[0024] With this configuration, insulation between the components inside the semiconductor device 1 is ensured, and the distance between the components inside the semiconductor device 1 is shortened, thereby making it possible to miniaturize the semiconductor device 1. Furthermore, insulation between the internal parts of the semiconductor device 1 that have an electric potential and the external components of the semiconductor device 1 can be ensured, making it possible to reduce the distance between the internal and external components of the semiconductor device 1. Because the distance between the components is reduced, it is possible to miniaturize and reduce the cost of a power conversion device or the like incorporating the semiconductor device 1.

[0025] In this embodiment, the semiconductor device 1 includes an insulating heat dissipation member 5 that is thermally connected to a first second surface 11b2 opposite to the first first surface 11b1 of the first lead frame 11, a second second surface 12b2 opposite to the second first surface 12b1 of the second lead frame 12, and a third second surface 13b2 opposite to the third first surface 13b1 of the third lead frame 13. The insulating heat dissipation member 5 is formed of a resin member such as silicone having insulating properties. The insulating heat dissipation member 5 has higher heat dissipation properties than the resin member 6.

[0026] With this configuration, heat from the semiconductor device 1 is dissipated to the outside via the insulating heat dissipation member 5, thereby improving the heat dissipation performance of the semiconductor device 1 while ensuring the insulation of the semiconductor device 1. Furthermore, because the insulation of the semiconductor device 1 is ensured, the insulating heat dissipation member 5 side of the semiconductor device 1 can be thermally connected directly to a cooling member made of metal via a heat dissipation member such as grease, thereby further reducing the temperatures of the first semiconductor element 21 and the second semiconductor element 22. Because the temperatures of the first semiconductor element 21 and the second semiconductor element 22 are further reduced, the semiconductor device 1 can be further miniaturized and reduced in cost.

[0027] In this embodiment, the semiconductor device 1 is fabricated by transfer molding using a resin molding die. The portions supported by the resin molding die are the portions of each lead frame protruding from the resin member 6 (terminal portions described later) and the portion of the insulating heat dissipation member 5 opposite the side of each lead frame. Sealing with a resin member is not limited to transfer molding. It is also possible to house the first lead frame 11, the second lead frame 12, the third lead frame 13, the first semiconductor element 21, the second semiconductor element 22, the first plate-like leads 3, and the second plate-like leads 4 in a resin case, and inject a sealing material such as gel into the inside of the resin case.

[0028] <Lead frame> The configuration of each component will be described in detail below. First, the configuration of the lead frame will be described. As shown in FIG. 1, the first lead frame 11 has a first terminal 11a connected to an external component and a first mounting portion 11b thermally connected to the insulating heat dissipation member 5 at a first second surface 11b2. The first first surface 11b1 is provided on the first mounting portion 11b. The second lead frame 12 has a second terminal 12a connected to an external component and a second mounting portion 12b thermally connected to the insulating heat dissipation member 5 at a second second surface 12b2. The second first surface 12b1 is provided on the second mounting portion 12b. The third lead frame 13 has a third terminal 13a connected to an external component and a third mounting portion 13b thermally connected to the insulating heat dissipation member 5 at a third second surface 13b2. The third first surface 13b1 is provided on the third mounting portion 13b. Parts of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a are exposed from the resin member 6. As shown in FIG. 2, the insulating heat dissipation member 5 has a surface exposed from the resin member 6 opposite to the surface to which each lead frame is thermally connected.

[0029] In this embodiment, the thicknesses of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b are each thicker than the thicknesses of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a. Reducing the thicknesses of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a allows the semiconductor device 1 to be miniaturized. Increasing the thicknesses of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b allows the heat loss of the first semiconductor element 21 and the second semiconductor element 22 to be efficiently dissipated to the outside via each mounting portion. Furthermore, since the entire mounting portion contributes to cooling the first semiconductor element 21 and the second semiconductor element 22, highly efficient cooling of the first semiconductor element 21 and the second semiconductor element 22 is possible. The increased thickness of the mounting portion prevents the semiconductor device 1 from becoming larger, while reducing the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22. Furthermore, since the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is reduced, it is possible to change to cheaper and smaller semiconductor elements, thereby further reducing the cost of the semiconductor device 1.

[0030] The first lead frame 11, the second lead frame 12, and the third lead frame 13 are fabricated from a metal plate material such as copper or aluminum having a certain thickness by pressing, rolling, or punching using a die. The method for fabricating each lead frame is not limited to this, and they may also be fabricated by subjecting the metal plate material to laser processing or etching. These manufacturing methods make it possible to easily fabricate each lead frame. In this embodiment, as shown in FIG. 2, the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a are exposed from the resin member 6, bent in the Z direction, and connected to other components at their respective ends.

[0031] In the present embodiment, the thicknesses of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b are each thicker than the thicknesses of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a, respectively. However, this is not limiting. The thicknesses of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b may be the same as the thicknesses of the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a, respectively. When the thicknesses of the mounting portions and the terminal portions are the same, processing such as rolling to locally change the thickness of a single sheet metal is not required. Because the lead frame can be manufactured using a simple manufacturing method such as press processing or punching, the lead frame processing is simplified, thereby reducing the manufacturing cost of the lead frame.

[0032] In the present embodiment, the first lead frame 11, the second lead frame 12, and the third lead frame 13 are formed from flat metal members, but the present invention is not limited to this. The first lead frame 11, the second lead frame 12, and the third lead frame 13 may be part of an electronic circuit formed on a substrate using a metal pattern. This configuration allows for more efficient heat dissipation of the heat loss from the first semiconductor element 21 and the second semiconductor element 22, thereby further reducing the size and cost of the semiconductor device 1.

[0033] <First semiconductor element 21, second semiconductor element 22> In this embodiment, the first semiconductor element 21 and the second semiconductor element 22 are, for example, diodes. The first semiconductor element 21 and the second semiconductor element 22 are not limited to diodes. The first semiconductor element 21 and the second semiconductor element 22 may be, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), or bipolar transistors. The first semiconductor element 21 and the second semiconductor element 22 are formed on a semiconductor substrate made of a wide-gap semiconductor such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium oxide (GaO), or diamond.

[0034] The bonding member 7 is, for example, solder, but is not limited to solder. The bonding member 7 may be made of other electrically connectable materials, such as silver. By using such materials, the thermal resistance of the semiconductor element can be further reduced. Because the thermal resistance can be reduced, the size of each lead frame can be reduced and the semiconductor element can be changed to a smaller size, thereby making it possible to reduce the size and cost of the semiconductor device 1.

[0035] In this embodiment, the semiconductor device 1 includes a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22, and the number of the plurality of first semiconductor elements 21 is the same as the number of the plurality of second semiconductor elements 22. In this embodiment, the number of each of the first semiconductor elements 21 and the second semiconductor elements 22 is two. This configuration allows the first lead frame 11 and the second lead frame 12 to have the same shape, thereby reducing the cost of the first lead frame 11 and the second lead frame 12. Furthermore, because the distance from the end of the first semiconductor element 21 to the end of the first lead frame 11 and the distance from the end of the second semiconductor element 22 to the end of the second lead frame 12 are equal, the difference in thermal resistance between the semiconductor elements for each semiconductor element arrangement can be reduced, and therefore, the first semiconductor element 21 and the second semiconductor element 22 can achieve equal heat dissipation effects.

[0036] In this embodiment, the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 are arranged in the Y direction. With this configuration, the width in the X direction of the first lead frame 11 and the second lead frame 12 can be reduced to the minimum width required for heat dissipation of each semiconductor element in addition to the width in the X direction of each semiconductor element, thereby making it possible to reduce the size of the first lead frame 11 and the second lead frame 12. Furthermore, the cost of the first lead frame 11 and the second lead frame 12 can be reduced.

[0037] <First plate-shaped lead 3, second plate-shaped lead 4> Next, the first plate-like lead 3 and the second plate-like lead 4, which are essential components of the present application, will be described. In the present embodiment shown in FIG. 1, the first plate-like lead 3 and the second plate-like lead 4 have the same shape, so the first plate-like lead 3 will be described as an example using FIGS. 3 and 4. In this embodiment, the first plate-like lead 3 has two step portions 300, and the first connecting portion 31 and the second connecting portion 32 have the same length in the Y direction but different lengths in the X direction. The length of the first connecting portion 31 in the Y direction is a1, the length in the X direction is b1, and the length of the second connecting portion 32 in the Y direction is a2, the length in the X direction is b2. In this embodiment, a1 = a2, and b1 > b2. As shown in FIG. 1, the first connecting portion 31 is located inside the outer periphery of the first semiconductor element 21, and the width of the second connecting portion 32 in the X direction is smaller than the width of the third lead frame 13 in the X direction. In this embodiment, as shown in Fig. 4, the first connecting portion 31 and the second connecting portion 32 have different heights in the Z direction. The first plate-shaped lead 3 and the second plate-shaped lead 4 are made from a metal plate material of a certain thickness, such as copper or aluminum, by pressing or punching with a die, followed by bending. The shapes and effects of the first plate-shaped lead 3 and the second plate-shaped lead 4 will be described below.

[0038] In this embodiment, the first plate-shaped lead 3 and the second plate-shaped lead 4 have the same shape. With this configuration, the first plate-shaped lead 3 and the second plate-shaped lead 4 are the same member, so there is no need to manufacture them separately, and management of each member becomes easier, thereby improving the productivity of the semiconductor device 1. Furthermore, the cost of the semiconductor device 1 can be reduced.

[0039] In this embodiment, the Y-direction center of the second connection portion 32 is located on one side of the Y-direction center of the first connection portion 31, at a distance of at least half the Y-direction width of the second connection portion 32, and the Y-direction center of the fourth connection portion 42 is located on the other side of the Y-direction center of the third connection portion 41, at a distance of at least half the Y-direction width of the fourth connection portion 42. In FIG. 3 , a line passing through the Y-direction center of the first connection portion 31 and parallel to the X-direction is referred to as a first connection portion center line 31a, and a line passing through the Y-direction center of the second connection portion 32 and parallel to the X-direction is referred to as a second connection portion center line 32a. The first connection portion center line 31a and the second connection portion center line 32a are indicated by dashed lines. The distance Y1 between the first connection portion center line 31a and the second connection portion center line 32a is at least half the Y-direction width of the second connection portion 32. One side of the Y direction is the direction of the Y-axis arrow shown in the figure, and the other side of the Y direction is the opposite direction of the Y-axis arrow.

[0040] 6, the Y-direction center of the second connection portion 32 may be located on the other side in the Y direction from the Y-direction center of the first connection portion 31, at a distance of at least half the Y-direction width of the second connection portion 32, and the Y-direction center of the fourth connection portion 42 may be located on one side in the Y direction from the Y-direction center of the third connection portion 41, at a distance of at least half the Y-direction width of the fourth connection portion 42. Figure 6 is a plan view showing an outline of the configuration of a semiconductor device 1 according to a modification of the first embodiment, with the resin member 6 removed and only the outline of the resin member 6 being shown.

[0041] With this configuration, when viewed in the Z direction, the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 can be aligned in the Y-direction. Because the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 are aligned in the Y-direction, the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 can be made equal. Because the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are made equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0042] In this embodiment, as shown in FIG. 4 , the first connecting portion 31 and the second connecting portion 32 are positioned differently in the Z direction from the first connecting portion 35, and the third connecting portion 41 and the fourth connecting portion 42 are positioned differently in the Z direction from the second connecting portion 45. This configuration makes it possible to easily determine the area where the joining member 7 is attached to each joint. Also, it is possible to make the thickness of the joining member 7 uniform. Because the area where the joining member 7 is attached is determined and the thickness of the joining member 7 is stable, it is possible to prevent contact between the joining member 7 and other members. Because contact between the joining member 7 and other members is prevented, it is possible to prevent poor insulation.

[0043] In this embodiment, when viewed in the Z direction, the outer edges of the first connecting portion 35 of the first plate lead 3 and the second connecting portion 45 of the second plate lead 4 have at least one step that changes in the Y direction. A step that changes in the Y direction is referred to as a step portion 300. The first plate lead 3 shown in FIG. 3 has two step portions 300. This configuration improves the self-supporting ability of each plate lead. By improving the self-supporting ability of each plate lead, when mounting the plate leads, the mounting equipment can easily grasp the plate leads that are stably placed in a case or the like. Because the mounting equipment can more easily grasp the plate leads, errors caused by the equipment failing to grasp them during manufacturing are reduced, thereby reducing the manufacturing cost of the semiconductor device 1 and improving the productivity of the semiconductor device 1.

[0044] In the present embodiment, the area of ​​the second connecting portion 32 is smaller than the area of ​​the first connecting portion 31, and the area of ​​the fourth connecting portion 42 is smaller than the area of ​​the third connecting portion 41. With this configuration, the areas of the second connecting portion 32 and the fourth connecting portion 42 can be reduced regardless of the sizes of the first semiconductor element 21 and the second semiconductor element 22. Since the areas of the second connecting portion 32 and the fourth connecting portion 42 are reduced, the width of the third lead frame 13 in the X direction can be reduced. Since the width of the third lead frame 13 in the X direction is reduced, the third lead frame 13 can be made smaller and less expensive, and the semiconductor device 1 can be made smaller and less expensive.

[0045] In the present embodiment, the first connecting portion 31 is provided inside the outer periphery of the first semiconductor element 21, and the third connecting portion 41 is provided inside the outer periphery of the second semiconductor element 22. With this configuration, the region to which the bonding member 7 is attached is inside the outer peripheries of the first semiconductor element 21 and the second semiconductor element 22, and the bonding member 7 does not flow out beyond the outer peripheries of the first semiconductor element 21 and the second semiconductor element 22, thereby suppressing contact between the bonding member 7 and other members. Since contact between the bonding member 7 and other members is suppressed, insulation defects within the semiconductor device 1 can be suppressed.

[0046] In this embodiment, the height in the Z direction of the surface of the first connecting portion 31 facing the first semiconductor element 21 is different from the height in the Z direction of the surface of the second connecting portion 32 facing the third lead frame 13, and the height in the Z direction of the surface of the third connecting portion 41 facing the second semiconductor element 22 is different from the height in the Z direction of the surface of the fourth connecting portion 42 facing the third lead frame 13. The first connecting portion 31 is shifted in the Z direction from the second connecting portion 32 by a distance D1 shown in FIG. 4 . With this configuration, the first connecting portion 31 can be shifted in the Z direction by the thickness of the first semiconductor element 21 and the bonding member 7, and the third connecting portion 41 can be shifted in the Z direction by the thickness of the second semiconductor element 22 and the bonding member 7. Therefore, the first semiconductor element 21 and the first connecting portion 31, and the second semiconductor element 22 and the third connecting portion 41 can be arranged to face each other and reliably connected to each other without changing the thickness of each lead frame.

[0047] In this embodiment, the first connecting portion 31, the second connecting portion 32, and the first linking portion 35 have the same thickness, and the third connecting portion 41, the fourth connecting portion 42, and the second linking portion 45 have the same thickness. In FIG. 4 , if the thickness of the first connecting portion 31 is D2, the thickness of the second connecting portion 32 is D3, and the thickness of the first linking portion 35 is D4, then D2 = D3 = D4. With this configuration, the first plate-shaped lead 3 and the second plate-shaped lead 4 can be manufactured from a single plate material of the same thickness, thereby reducing the cost of the first plate-shaped lead 3 and the second plate-shaped lead 4. Since the cost of the first plate-shaped lead 3 and the second plate-shaped lead 4 is reduced, the cost of the semiconductor device 1 can be reduced.

[0048] In this embodiment, the first connecting portion 31, the second connecting portion 32, the third connecting portion 41, and the fourth connecting portion 42 each have a first through hole penetrating in the Z direction. In the figure, the first through holes of the first connecting portion 31 and the second connecting portion 32 are referred to as first through holes 33, and the first through holes of the third connecting portion 41 and the fourth connecting portion 42 are referred to as first through holes 43. The first through holes 33 are filled with a bonding member 7 such as solder to connect the first connecting portion 31 to the first semiconductor element 21, and the second connecting portion 32 to the third lead frame 13. Similarly, the first through holes 43 are filled with a bonding member 7 such as solder to connect the third connecting portion 41 to the second semiconductor element 22, and the fourth connecting portion 42 to the third lead frame 13.

[0049] In this embodiment, the first connecting portion 31 and the second connecting portion 32 are offset in the Y direction, and the third connecting portion 41 and the fourth connecting portion 42 are offset in the Y direction, so that a torsional force may be applied to the first plate-like lead 3 and the second plate-like lead 4 due to the influence of the flow of the resin member 6 during resin molding and thermal stress during operation of the semiconductor device 1. When a torsional force is applied to the first plate-like lead 3 and the second plate-like lead 4, a force acts on each of the first connecting portion 31, the second connecting portion 32, the third connecting portion 41, and the fourth connecting portion 42 in a direction away from the respective joint points.

[0050] By providing the first through holes 33 and the first through holes 43, the bonding material 7 is filled into the first through holes 33 and the first through holes 43, which improves the adhesion strength of the first connection portion 31, the second connection portion 32, the third connection portion 41, and the fourth connection portion 42, thereby suppressing the force acting in a direction away from the joint points of these connection portions. Since the force acting in a direction away from the joint points is suppressed, electrical short circuits and disconnections that occur when these connection portions are separated can be suppressed. Since electrical short circuits and disconnections are suppressed, the reliability of the semiconductor device 1 can be improved.

[0051] In this embodiment, each of the first connecting portion 35 and the second connecting portion 45 has at least one second through hole penetrating in the Z direction. In the drawing, the second through hole of the first connecting portion 35 is referred to as the second through hole 34, and the second through hole of the second connecting portion 45 is referred to as the second through hole 44. The second through hole 34 and the second through hole 44 are filled with a resin member 6, and the second through hole 34 and the second through hole 44 portions, and the first connecting portion 35 and the second connecting portion 45 are fixed inside the semiconductor device 1 by the surrounding resin member 6. Although the second through holes 34 and 44 are shown with a circular shape, the shape of the second through holes 34 and 44 is not limited to a circular shape.

[0052] The provision of the second through holes 34 and 44 prevents the first plate-shaped lead 3 and the second plate-shaped lead 4 from tilting during resin molding, allowing the flow of the resin member 6 to be smooth. Since the tilt of the first plate-shaped lead 3 and the second plate-shaped lead 4 is prevented and the flow of the resin is smooth, the semiconductor device 1 can be manufactured easily and the manufacturing cost of the semiconductor device 1 can be reduced. Furthermore, the adhesive strength between the resin member 6 and the first plate-shaped lead 3 and the second plate-shaped lead 4 is improved, allowing the reliability of the semiconductor device 1 to be improved.

[0053] In this embodiment, the cross-sectional area of ​​the first coupling portion 35, including the second through hole 34 and cut in the Z direction, is larger than the cross-sectional areas of the end of the first connecting portion 31 on the other side in the X direction opposite the first coupling portion 35 and the end of the second connecting portion 32 on one side in the X direction opposite the first coupling portion 35. The cross-sectional area of ​​the second coupling portion 45, including the second through hole 44 and cut in the Z direction, is larger than the cross-sectional areas of the end of the third connecting portion 41 on one side in the X direction opposite the second coupling portion 45 and the end of the fourth connecting portion 42 on the other side in the X direction opposite the second coupling portion 45. The cross-sectional area of ​​the first coupling portion 35, including the second through hole 34 and cut in the Z direction, is, for example, the cross-sectional area of ​​the first coupling portion 35 cut in the Z direction along the dashed dotted lines E1 and E2 shown in FIG. 3 . One side in the X direction is the direction of the X-axis arrow in the figure, and the other side in the X direction is the direction opposite the X-axis arrow.

[0054] With this configuration, it is possible to prevent the cross-sectional area through which current flows in the first connecting portion 35 and the second connecting portion 45 from becoming locally smaller due to the provision of the second through holes 34, 44. Since the cross-sectional area through which current flows in the first connecting portion 35 and the second connecting portion 45 is prevented from becoming locally smaller, it is possible to prevent an increase in local loss in the first connecting portion 35 and the second connecting portion 45. Since an increase in local loss in the first connecting portion 35 and the second connecting portion 45 is prevented, it is possible to reduce the temperature inside the semiconductor device 1, thereby enabling the semiconductor device 1 to be made smaller and less expensive.

[0055] The second through holes 34, 44 are provided at positions adjacent to the outer edges of the first connecting portion 35 and the second connecting portion 45. With this configuration, tilting of the first plate-shaped lead 3 and the second plate-shaped lead 4 during resin molding can be further suppressed and the flow of the resin member 6 can be smoother, compared to when the second through holes 34, 44 are provided at the center of the first connecting portion 35 and the second connecting portion 45. Since tilting of the first plate-shaped lead 3 and the second plate-shaped lead 4 is further suppressed and the flow of the resin is further smoother, the semiconductor device 1 can be manufactured more easily and the manufacturing costs of the semiconductor device 1 can be further reduced.

[0056] <Variation 1> A first modification of the semiconductor device 1 will be described with reference to Fig. 7. In the semiconductor device 1 shown in Fig. 1, the first plate-like lead 3 and the second plate-like lead 4 have the same shape, but this is not limited to this. In the semiconductor device 1 of the first modification, when viewed in the Z direction, the Y-direction center of the first connection portion 31 and the Y-direction center of the second connection portion 32 are aligned in position, and the first linking portion 35 extends in the X direction, or the Y-direction center of the third connection portion 41 and the Y-direction center of the fourth connection portion 42 are aligned in position, and the second linking portion 45 extends in the X direction.

[0057] FIG. 7 is a plan view showing the outline of the configuration of a semiconductor device 1 according to a modification of the first embodiment, with the resin member 6 removed and only the outline of the resin member 6 shown. In FIG. 7, the Y-direction positions of the center of the third connection portion 41 and the center of the fourth connection portion 42 coincide with each other, the second coupling portion 45 extends in the X direction, and the second plate-like lead 4 is formed in a linear shape. The first plate-like lead 3 may also be formed in a linear shape. With this configuration, one of the first plate-like lead 3 and the second plate-like lead 4 has a simple linear shape, thereby reducing the manufacturing cost of the semiconductor device 1.

[0058] <Variation 2> A second modification of the semiconductor device 1 will be described with reference to FIG. 8. FIG. 8 is a plan view showing an outline of the configuration of the semiconductor device 1 according to a modification of the first embodiment, with the resin member 6 removed and only the outline of the resin member 6 shown. In the semiconductor device 1 of the second modification, the first terminal portion 11a and the first mounting portion 11b are formed of separate members, the second terminal portion 12a and the second mounting portion 12b are formed of separate members, and the third terminal portion 13a and the third mounting portion 13b are formed of separate members. The first terminal portion 11a and the first mounting portion 11b are electrically connected by, for example, a straight lead 11c made of a conductive metal. The first terminal portion 11a and the first mounting portion 11b are connected to the straight lead 11c by, for example, welding. Similarly, the second terminal portion 12a and the second mounting portion 12b are electrically connected by a straight lead 12c, and the third terminal portion 13a and the third mounting portion 13b are electrically connected by a straight lead 13c.

[0059] With this configuration, the shapes of the first mounting portion 11b, the second mounting portion 12b, and the third mounting portion 13b are simplified, which makes it possible to easily manufacture the first lead frame 11, the second lead frame 12, and the third lead frame 13. Since the first lead frame 11, the second lead frame 12, and the third lead frame 13 can be easily manufactured, the productivity of the semiconductor device 1 can be improved.

[0060] <Variation 3> A third modification of the semiconductor device 1 will be described with reference to FIG. 9 . FIG. 9 is a plan view showing an outline of the configuration of a semiconductor device 1 according to a modification of the first embodiment, with the resin member 6 removed and only the outline of the resin member 6 shown. In the semiconductor device 1 shown in FIG. 1 , the first lead frame 11, the second lead frame 12, and the third lead frame 13 are arranged on one surface of the insulating heat dissipation member 5, the other surface of which is exposed from the resin member 6. However, this is not limited to this. The semiconductor device 1 of the third modification shown in FIG. 9 does not include the insulating heat dissipation member 5. The first second surface 11b2 of the first lead frame 11, the second second surface 12b2 of the second lead frame 12, and the third second surface 13b2 of the third lead frame 13 do not need to be exposed from the resin member 6. Because the semiconductor device 1 does not include the insulating heat dissipation member 5, the cost of the semiconductor device 1 can be reduced.

[0061] <Variation 4> A fourth variation of the semiconductor device 1 will be described with reference to FIG. 10 . FIG. 10 is a cross-sectional view of a variation of the first embodiment taken at the same position as FIG. 2 , with the resin member 6 removed and only the outline of the resin member 6 shown. In the semiconductor device 1 of the fourth variation, the insulating heat dissipation member 5 is configured by stacking an insulating resin member layer 51 and a heat dissipation member layer 52 made of copper, aluminum, or the like and having high heat dissipation properties. This configuration allows for more efficient heat dissipation of the first semiconductor element 21 and the second semiconductor element 22, thereby reducing the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22. Because the thermal resistance of the first semiconductor element 21 and the second semiconductor element 22 is reduced, the size of each lead frame can be reduced, allowing for replacement with smaller, less expensive semiconductor elements, thereby reducing the size and cost of the semiconductor device 1.

[0062] <Variation 5> Modification 5 of the semiconductor device 1 will be described with reference to FIGS. 11 and 12. FIGS. 11 and 12 are plan views showing the first plate lead 3 of the semiconductor device 1 according to a modification of the first embodiment. While the first plate lead 3 shown in FIG. 3 has two stepped portions 300, this is not limiting. The first plate lead 3 of Modification 5 shown in FIG. 11 has one stepped portion 300. The first plate lead 3 of Modification 5 shown in FIG. 12 does not have a stepped portion 300. Even with this configuration, it is possible to suppress an increase in the thermal resistance of the semiconductor element and obtain a semiconductor device 1 that is smaller and less expensive. Furthermore, if the stepped portion 300 is not provided in the first connecting portion 35, it is preferable to provide a protrusion 36 in the first connecting portion 35 and a second through-hole 34 in the protrusion 36, as shown in FIG. 12. By providing the second through-hole 34 in the protrusion 36, it is possible to prevent the cross-sectional area through which current flows in the first connecting portion 35 from being locally reduced.

[0063] <Variation 6> A sixth modification of the semiconductor device 1 will be described with reference to FIG. 13. FIG. 13 is a plan view showing a first plate lead 3 of a semiconductor device 1 according to a modification of the first embodiment. In the first plate lead 3 shown in FIG. 3, the second through hole 34 is provided at a position adjacent to the outer edge of the first connecting portion 35, but this is not limited to this. The first plate lead 3 of the sixth modification shown in FIG. 13 has the second through hole 34 near the center of the first connecting portion 35. With this configuration, the first plate lead 3 has a simple shape while maintaining adhesion strength with the resin member 6, thereby reducing the manufacturing cost of the plate lead.

[0064] <Variation 7> Variation 7 of the semiconductor device 1 will be described with reference to FIGS. 14 and 15. FIG. 14 is a cross-sectional view of the first plate lead 3 according to a variation of the first embodiment, taken at a position equivalent to that of FIG. 4. FIG. 15 is a cross-sectional view of the first plate lead 3 according to a variation of the first embodiment, taken at a position equivalent to that of FIG. 4, including the location where the first plate lead 3 and the second plate lead 3 are connected. In the first plate lead 3 shown in FIG. 4, the first connecting portion 31 is shifted in the Z direction by a distance D1 from the second connecting portion 32, but this is not limited to this. As shown in FIGS. 14 and 15, the first connecting portion 31 and the second connecting portion 32 may have the same height in the Z direction. This configuration allows the first plate lead 3 to have a simple shape, thereby reducing the manufacturing cost of the plate lead.

[0065] <Variation 8> An eighth modification of the semiconductor device 1 will be described with reference to FIG. 16 . FIG. 16 is a cross-sectional view of a modification of the first embodiment, cut at the same position as FIG. 4 , including the location where the first plate-like lead 3 and the second plate-like lead 3 are connected. The first plate-like lead 3 shown in FIG. 4 is formed by bending such that the first connection portion 31 is shifted in the Z direction from the second connection portion 32 by a distance D1, where D2 = D3 = D4. However, this is not limiting. As shown in FIG. 16 , the thickness of the first connection portion 31 is thinner than the thickness of the second connection portion 32 by at least the thickness of the first semiconductor element 21, and the thickness of the third connection portion 41 is thinner than the thickness of the fourth connection portion 42 by at least the thickness of the second semiconductor element 22.

[0066] By configuring it in this manner, the thickness of the first connection portion 31 can be reduced by the thickness of the first semiconductor element 21 and the bonding member 7, and the thickness of the third connection portion 41 can be reduced by the thickness of the second semiconductor element 22 and the bonding member 7.Therefore, the first semiconductor element 21 and the first connection portion 31, and the second semiconductor element 22 and the third connection portion 41 can be placed opposite each other and reliably connected to each other without changing the thickness of each lead frame.

[0067] <Variation 9> Variation 9 of the semiconductor device 1 will be described with reference to FIGS. 17 and 18 . FIGS. 17 and 18 are cross-sectional views of a first plate-like lead 3 according to a variation of embodiment 1, taken at the same position as in FIG. 4 . The second through hole 34 shown in FIG. 4 has the same opening size on one side in the Z direction as the opening size on the other side in the Z direction, but this is not limited to this. As shown in FIGS. 17 and 18 , the second through hole 34 may have different opening sizes on one side in the Z direction than the opening size on the other side in the Z direction. FIG. 17 shows an example in which the opening size on one side in the Z direction is smaller than the opening size on the other side in the Z direction, and FIG. 18 shows an example in which the opening size on one side in the Z direction is larger than the opening size on the other side in the Z direction. The one side in the Z direction is the direction of the Z-axis arrow shown in the figure, and the other side in the Z direction is the opposite direction to the Z-axis arrow.

[0068] With this configuration, an appropriate direction for widening the openings of the second through holes 34, 44 can be selected depending on the shape of the components of the semiconductor device 1 and the stress appropriately applied to the first plate-like lead 3 and the second plate-like lead 4 due to conditions such as the gate when the semiconductor device 1 is molded, thereby improving the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4. Since the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4 is improved, the reliability of the semiconductor device 1 can be increased.

[0069] <Modification 10> A modification example 10 of the semiconductor device 1 will be described with reference to FIGS. 19 and 20. FIGS. 19 and 20 are plan views showing the first plate-like lead 3 of the semiconductor device 1 according to the modification example of the first embodiment. In the first plate-like lead 3 shown in FIG. 3, the lengths in the Y direction of the first connection portion 31 and the second connection portion 32 are the same, and the lengths in the X direction are different, but it is not limited thereto. In the first plate-like lead 3 of the modification example 10 shown in FIG. 19, the lengths in the X direction of the first connection portion 31 and the second connection portion 32 are the same, and the lengths in the Y direction are different, where a1 < a2 and b1 = b2. In the first plate-like lead 3 of the modification example 10 shown in FIG. 20, since the lengths in the X direction and the lengths in the Y direction of the first connection portion 31 and the second connection portion 32 are the same, a1 = a2 and b1 = b2. By configuring in this way, according to conditions such as the current handled by the semiconductor device 1, the size of the semiconductor element used, and manufacturing constraints, the first connection portion 31 and the second connection portion 32 of an appropriate size can be selected, so that the semiconductor device 1 can be miniaturized and cost-reduced.

[0070] <Modification Example 11> An eleventh modification of the semiconductor device 1 will be described with reference to FIG. 21 . FIG. 21 is a plan view showing an outline of the configuration of the semiconductor device 1 according to a modification of the first embodiment, with the resin member 6 removed and only the outline of the resin member 6 shown. In the semiconductor device 1 shown in FIG. 1 , the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a protrude from the resin member 6 to one side in the Y direction, but this is not limited to this. In the semiconductor device 1 of the eleventh modification shown in FIG. 21 , the first terminal portion 11a and the third terminal portion 13a protrude from the resin member 6 to the other side in the X direction. In this way, the direction in which the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a protrude from the resin member 6 can be freely selected. Because the direction in which the first terminal portion 11a, the second terminal portion 12a, and the third terminal portion 13a protrude from the resin member 6 can be freely selected, the arrangement of external components connected to the semiconductor device 1 can be freely changed. The arrangement of external components connected to the semiconductor device 1 can be freely changed, which improves the degree of freedom in the layout of the entire product including the semiconductor device 1. Since the degree of freedom in the layout of the entire product including the semiconductor device 1 is improved, it is possible to downsize the product by optimizing the layout inside the product, and by eliminating unnecessary connecting components, it is possible to reduce the cost of the product.

[0071] As described above, the semiconductor device 1 according to the first embodiment includes a first lead frame, a first semiconductor element connected to the first lead frame, a third lead frame provided with a third first surface, a second lead frame, a second semiconductor element connected to the second lead frame, a first connection portion bonded to the first semiconductor element, a second connection portion bonded to the third first surface, and a first coupling portion coupling the first connection portion and the second connection portion, and a first plate-like lead bonded to the second semiconductor element. The semiconductor device 1 includes a second plate-like lead having a third connection portion bonded to the third first surface, a fourth connection portion bonded to the third first surface, and a second connection portion connecting the third connection portion and the fourth connection portion, and as viewed in the Z direction, the positional range of the first semiconductor element 21 and the positional range of the second semiconductor element 22 at least partially overlap, and the second connection portion and the fourth connection portion are aligned in the Y direction, thereby reducing the distance between the first semiconductor element 21 and the second semiconductor element 22 and enabling a reduction in size and cost of the semiconductor device 1. Furthermore, since the second connection portion 32 and the fourth connection portion 42 are aligned in the Y direction, the width of the third lead frame 13 can be reduced to a width that allows connection of one width of the second connection portion 32 or the fourth connection portion 42, thereby enabling a reduction in size and cost of the semiconductor device 1.

[0072] Furthermore, because the distance between the semiconductor element and the end of the lead frame and the distance between semiconductor elements arranged on the same lead frame are not significantly reduced, there is no difference in the thermal resistance (heat dissipation to the lead frame) of the semiconductor elements depending on the arrangement of the semiconductor elements, and the effects of thermal interference from other semiconductor elements can be reduced, thereby suppressing an increase in the thermal resistance of first semiconductor element 21 and second semiconductor element 22. Because an increase in the thermal resistance of first semiconductor element 21 and second semiconductor element 22 is suppressed, it is possible to switch to cheaper, smaller-sized semiconductor elements and to miniaturize the lead frame, thereby reducing the size and cost of semiconductor device 1.

[0073] When viewed in the Z direction, if the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 are aligned in position in the Y direction, the distance of the first semiconductor element 21 from the end of the first lead frame 11 can be made equal to the distance of the second semiconductor element 22 from the end of the second lead frame 12. Since the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 are made equal, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be further reduced.

[0074] When the first plate-shaped lead 3 and the second plate-shaped lead 4 have the same shape, the first plate-shaped lead 3 and the second plate-shaped lead 4 are made of the same material, so there is no need to manufacture them separately, and management of each material becomes easier, thereby improving the productivity of the semiconductor device 1. Furthermore, the cost of the semiconductor device 1 can be reduced.

[0075] When viewed in the Z direction, if the Y-direction positions of the center of the Y-direction of the first connection portion 31 and the center of the Y-direction of the second connection portion 32 coincide and the first linking portion 35 extends in the X-direction, or if the Y-direction positions of the center of the Y-direction of the third connection portion 41 and the center of the Y-direction of the fourth connection portion 42 coincide and the second linking portion 45 extends in the X-direction, one of the first plate-shaped lead 3 and the second plate-shaped lead 4 will have a linear and simple shape, thereby reducing the manufacturing cost of the semiconductor device 1.

[0076] When the semiconductor device 1 includes a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22, and the number of the plurality of first semiconductor elements 21 is the same as the number of the plurality of second semiconductor elements 22, the first lead frame 11 and the second lead frame 12 can be made to have the same shape, thereby reducing the cost of the first lead frame 11 and the second lead frame 12. Furthermore, because the distance from the end of the first semiconductor element 21 to the end of the first lead frame 11 and the distance from the end of the second semiconductor element 22 to the end of the second lead frame 12 are the same, the difference in thermal resistance of each semiconductor element for each arrangement of the semiconductor elements can be reduced, and therefore the first semiconductor element 21 and the second semiconductor element 22 can each achieve the same heat dissipation effect.

[0077] When multiple first semiconductor elements 21 and multiple second semiconductor elements 22 are arranged in the Y direction, the width in the X direction of first lead frame 11 and second lead frame 12 can be reduced to the minimum width required for heat dissipation of each semiconductor element in addition to the width in the X direction of each semiconductor element, thereby making it possible to reduce the size of first lead frame 11 and second lead frame 12. In addition, the cost of first lead frame 11 and second lead frame 12 can be reduced.

[0078] When the Y-direction center of the second connection portion 32 is disposed on one side in the Y direction from the Y-direction center of the first connection portion 31 at a distance of at least half the Y-direction width of the second connection portion 32, and the Y-direction center of the fourth connection portion 42 is disposed on the other side in the Y direction from the Y-direction center of the third connection portion 41 at a distance of at least half the Y-direction width of the fourth connection portion 42, the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 can be aligned in the Y direction as viewed in the Z direction. Because the Y-direction center of the first semiconductor element 21 and the Y-direction center of the second semiconductor element 22 are aligned in the Y direction, the distance of the first semiconductor element 21 from the end of the first lead frame 11 and the distance of the second semiconductor element 22 from the end of the second lead frame 12 can be made equal. Since the distance from the end of the first lead frame 11 to the first semiconductor element 21 and the distance from the end of the second lead frame 12 to the second semiconductor element 22 are equal, the difference in thermal resistance of each semiconductor element for each semiconductor element arrangement can be further reduced.

[0079] When the Z-direction positions of the first connecting portion 31 and the second connecting portion 32 and the first connecting portion 35 are different, and the Z-direction positions of the third connecting portion 41 and the fourth connecting portion 42 and the second connecting portion 45 are different, the area where the joining member 7 is attached to each joint can be easily determined. In addition, the thickness of the joining member 7 can be made uniform. Because the area where the joining member 7 is attached is determined and the thickness of the joining member 7 is stable, contact between the joining member 7 and other members can be suppressed. Because contact between the joining member 7 and other members is suppressed, insulation defects can be suppressed.

[0080] When viewed in the Z direction, if the outer edges of the first connecting portion 35 of the first plate lead 3 and the second connecting portion 45 of the second plate lead 4 have at least one step that changes in the Y direction, the self-supporting ability of each plate lead can be improved. By improving the self-supporting ability of each plate lead, when mounting the plate leads, the plate leads that are placed in a stable state in a case or the like can be easily grasped by the mounting equipment. Since the mounting equipment can easily grasp the plate leads, errors that occur during manufacturing due to the equipment failing to grasp them are reduced, thereby reducing the manufacturing cost of the semiconductor device 1 and improving the productivity of the semiconductor device 1.

[0081] When the area of ​​the second connecting portion 32 is smaller than the area of ​​the first connecting portion 31 and the area of ​​the fourth connecting portion 42 is smaller than the area of ​​the third connecting portion 41, the areas of the second connecting portion 32 and the fourth connecting portion 42 can be reduced regardless of the sizes of the first semiconductor element 21 and the second semiconductor element 22. Because the areas of the second connecting portion 32 and the fourth connecting portion 42 are reduced, the width of the third lead frame 13 in the X direction can be reduced. Because the width of the third lead frame 13 in the X direction is reduced, the third lead frame 13 can be made smaller and less expensive, and the semiconductor device 1 can be made smaller and less expensive.

[0082] When the first connecting portion 31 is provided inside the outer periphery of the first semiconductor element 21 and the third connecting portion 41 is provided inside the outer periphery of the second semiconductor element 22, the region to which the bonding member 7 is attached is inside the outer peripheries of the first semiconductor element 21 and the second semiconductor element 22, and the bonding member 7 does not flow out beyond the outer peripheries of the first semiconductor element 21 and the second semiconductor element 22, thereby suppressing contact between the bonding member 7 and other members. Since contact between the bonding member 7 and other members is suppressed, insulation defects within the semiconductor device 1 can be suppressed.

[0083] If the Z-direction height of the surface of the first connecting portion 31 facing the first semiconductor element 21 is different from the Z-direction height of the surface of the second connecting portion 32 facing the third lead frame 13, and if the Z-direction height of the surface of the third connecting portion 41 facing the second semiconductor element 22 is different from the Z-direction height of the surface of the fourth connecting portion 42 facing the third lead frame 13, the first connecting portion 31 can be shifted in the Z-direction by the thickness of the first semiconductor element 21 and the bonding member 7, and the third connecting portion 41 can be shifted in the Z-direction by the thickness of the second semiconductor element 22 and the bonding member 7.Therefore, the first semiconductor element 21 and the first connecting portion 31, and the second semiconductor element 22 and the third connecting portion 41 can be placed opposite each other and reliably connected to each other without changing the thickness of each lead frame.

[0084] When the first connecting portion 31, the second connecting portion 32, and the first linking portion 35 have the same thickness, and the third connecting portion 41, the fourth connecting portion 42, and the second linking portion 45 have the same thickness, the first plate-shaped lead 3 and the second plate-shaped lead 4 can be fabricated from a single plate material of the same thickness, thereby reducing the cost of the first plate-shaped lead 3 and the second plate-shaped lead 4. Since the cost of the first plate-shaped lead 3 and the second plate-shaped lead 4 is reduced, the cost of the semiconductor device 1 can be reduced.

[0085] When the thickness of the first connection portion 31 is formed to be thinner than the thickness of the second connection portion 32 by at least the thickness of the first semiconductor element 21, and the thickness of the third connection portion 41 is formed to be thinner than the thickness of the fourth connection portion 42 by at least the thickness of the second semiconductor element 22, the thickness of the first connection portion 31 can be made thinner by the thickness of the first semiconductor element 21 and the bonding member 7, and the thickness of the third connection portion 41 can be made thinner by the thickness of the second semiconductor element 22 and the bonding member 7.Therefore, the first semiconductor element 21 and the first connection portion 31, and the second semiconductor element 22 and the third connection portion 41 can be placed opposite each other and reliably connected to each other without changing the thickness of each lead frame.

[0086] When the first lead frame 11, the second lead frame 12, the third lead frame 13, the first semiconductor element 21, the second semiconductor element 22, the first plate-like lead 3, and the second plate-like lead 4 are sealed with the insulating resin member 6, insulation between the internal components of the semiconductor device 1 is ensured, and the distance between the internal components of the semiconductor device 1 is shortened, thereby enabling the miniaturization of the semiconductor device 1. Furthermore, insulation between the internal parts of the semiconductor device 1 that have an electric potential and the external components of the semiconductor device 1 is ensured, thereby enabling the distance between the internal and external components of the semiconductor device 1 to be reduced. Because the distance between the components is reduced, a power conversion device or the like incorporating the semiconductor device 1 can be miniaturized and reduced in cost.

[0087] When the first connecting portion 31, the second connecting portion 32, the third connecting portion 41, and the fourth connecting portion 42 each have a first through hole penetrating in the Z direction, the first through hole 33 and the second through hole 43 are filled with the bonding material 7, thereby improving the adhesion strength of the first connecting portion 31, the second connecting portion 32, the third connecting portion 41, and the fourth connecting portion 42, and suppressing the force acting in a direction away from the joint of these connecting portions. Since the force acting in a direction away from the joint is suppressed, electrical short circuits and disconnections that occur when these connecting portions separate can be suppressed. Since electrical short circuits and disconnections are suppressed, the reliability of the semiconductor device 1 can be improved.

[0088] When the semiconductor device 1 includes an insulating heat dissipation member 5 thermally connected to the first second surface 11b2 opposite the first first surface 11b1 of the first lead frame 11, the second second surface 12b2 opposite the second first surface 12b1 of the second lead frame 12, and the third second surface 13b2 opposite the third first surface 13b1 of the third lead frame 13, heat from the semiconductor device 1 is dissipated to the outside via the insulating heat dissipation member 5, thereby improving the heat dissipation performance of the semiconductor device 1 while ensuring the insulation of the semiconductor device 1. Furthermore, because the insulation of the semiconductor device 1 is ensured, the insulating heat dissipation member 5 side of the semiconductor device 1 can be thermally connected directly to a metal cooling member via a heat dissipation member such as grease, thereby further reducing the temperatures of the first semiconductor element 21 and the second semiconductor element 22. This further reduction in the temperatures of the first semiconductor element 21 and the second semiconductor element 22 allows the semiconductor device 1 to be further miniaturized and cost-effective.

[0089] When the first connecting portion 35 and the second connecting portion 45 each have at least one second through-hole penetrating in the Z direction, tilting of the first plate-shaped lead 3 and the second plate-shaped lead 4 can be suppressed during resin molding, and the flow of the resin member 6 can be smoothed. Since tilting of the first plate-shaped lead 3 and the second plate-shaped lead 4 is suppressed and the flow of the resin is smoothed, the semiconductor device 1 can be easily manufactured and the manufacturing cost of the semiconductor device 1 can be reduced. Furthermore, since the adhesive strength between the resin member 6 and the first plate-shaped lead 3 and the second plate-shaped lead 4 is improved, the reliability of the semiconductor device 1 can be improved.

[0090] When the cross-sectional area of ​​the first coupling portion 35, including the portion of the second through hole 34 and cut in the Z direction, is larger than the cross-sectional areas of the end of the first connecting portion 31 on the other side in the X direction opposite the first coupling portion 35 and the end of the second connecting portion 32 on one side in the X direction opposite the first coupling portion 35, and when the cross-sectional area of ​​the second coupling portion 45, including the portion of the second through hole 44 and cut in the Z direction, is larger than the cross-sectional areas of the end of the third connecting portion 41 on the one side in the X direction opposite the second coupling portion 45 and the end of the fourth connecting portion 42 on the other side in the X direction opposite the second coupling portion 45, the provision of the second through holes 34, 44 can prevent the cross-sectional area through which current flows in the first coupling portion 35 and the second coupling portion 45 from becoming locally small. Since the cross-sectional areas through which current flows in the first coupling portion 35 and the second coupling portion 45 are prevented from becoming locally small, an increase in local loss in the first coupling portion 35 and the second coupling portion 45 can be prevented. Since an increase in local loss in the first connecting portion 35 and the second connecting portion 45 is suppressed, the temperature inside the semiconductor device 1 can be reduced, thereby making it possible to reduce the size and cost of the semiconductor device 1.

[0091] When the second through holes 34, 44 are provided at positions adjacent to the outer edges of the first and second connecting portions 35, 45, tilting of the first and second plate-like leads 3, 4 during resin molding can be further suppressed and the flow of the resin member 6 can be made smoother, compared to when the second through holes 34, 44 are provided at the center of the first and second connecting portions 35, 45. Since tilting of the first and second plate-like leads 3, 4 can be further suppressed and the flow of resin can be made smoother, the semiconductor device 1 can be manufactured more easily and the manufacturing costs of the semiconductor device 1 can be further reduced.

[0092] When the second through-hole 34 has an opening with a different size on one side in the Z direction than on the other side in the Z direction, an appropriate direction for widening the openings of the second through-holes 34, 44 can be selected depending on the shape of the components of the semiconductor device 1 and the stress appropriately applied to the first plate-like lead 3 and the second plate-like lead 4 due to conditions such as the gate during molding of the semiconductor device 1, thereby improving the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4. Since the adhesion between the resin member 6 and the first plate-like lead 3 and the second plate-like lead 4 is improved, the reliability of the semiconductor device 1 can be increased.

[0093] Furthermore, although the present application describes various exemplary embodiments and examples, the various features, aspects, and functions described in one or more embodiments are not limited to application to a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless variations not illustrated are conceivable within the scope of the technology disclosed in the present specification, including, for example, cases where at least one component is modified, added, or omitted, and cases where at least one component is extracted and combined with components of another embodiment.

[0094] Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) a first lead frame having electrical conductivity; a first semiconductor element electrically and thermally connected to a first surface of the first lead frame; a third lead frame that is arranged next to the first lead frame at a distance, has a third first surface on the same side as the first first surface, and has conductivity; a second lead frame that is electrically conductive and that is arranged on the opposite side of the third lead frame from the first lead frame, with a gap between the third lead frame and the third lead frame, and that has a second first surface on the same side as the first first surface; a second semiconductor element electrically and thermally connected to the second first surface of the second lead frame; a first plate-like lead having conductivity, the first plate-like lead including a first connection portion bonded via a bonding member to a surface of the first semiconductor element opposite to the first lead frame side, a second connection portion bonded via a bonding member to the third first surface, and a first linking portion linking the first connection portion and the second connection portion; a third connection portion bonded via a bonding member to a surface of the second semiconductor element opposite to the second lead frame side, a fourth connection portion bonded via a bonding member to the third first surface, and a second connection portion connecting the third connection portion and the fourth connection portion, and a conductive second plate-like lead; a direction in which the first lead frame, the third lead frame, and the second lead frame are arranged is defined as an X direction, a direction parallel to the third first surface and perpendicular to the X direction is defined as a Y direction, and a direction perpendicular to the X direction and the Y direction is defined as a Z direction; When viewed in the Z direction, a positional range of the first semiconductor element in the Y direction and a positional range of the second semiconductor element in the Y direction at least partially overlap with each other; The second connection portion and the fourth connection portion are arranged in the Y direction. (Appendix 2) When viewed in the Z direction, 2. The semiconductor device according to claim 1, wherein a center of the first semiconductor element in the Y direction and a center of the second semiconductor element in the Y direction are aligned in the Y direction. (Appendix 3) 3. The semiconductor device according to claim 1, wherein the first plate-shaped lead and the second plate-shaped lead have the same shape. (Appendix 4) When viewed in the Z direction, a center of the first connection portion in the Y direction and a center of the second connection portion in the Y direction are aligned in the Y direction, and the first linking portion extends in the X direction; Alternatively, the semiconductor device according to claim 1 or 2, wherein a center of the third connection portion in the Y direction and a center of the fourth connection portion in the Y direction are positioned in the Y direction to coincide with each other, and the second linking portion extends in the X direction. (Appendix 5) a plurality of the first semiconductor elements and a plurality of the second semiconductor elements; 4. The semiconductor device according to claim 1, wherein the number of the plurality of first semiconductor elements is the same as the number of the plurality of second semiconductor elements. (Appendix 6) 6. The semiconductor device according to claim 5, wherein the plurality of first semiconductor elements and the plurality of second semiconductor elements are arranged in the Y direction. (Appendix 7) the Y-direction center of the second connection portion is disposed on one side in the Y direction from the Y-direction center of the first connection portion, at a distance of at least 1 / 2 of the Y-direction width of the second connection portion, and the Y-direction center of the fourth connection portion is disposed on the other side in the Y direction from the Y-direction center of the third connection portion, at a distance of at least 1 / 2 of the Y-direction width of the fourth connection portion. Alternatively, the semiconductor device according to any one of appendices 1 to 3, 5, and 6, wherein the Y-direction center of the second connection portion is disposed on the other side of the Y-direction from the Y-direction center of the first connection portion, at a distance of at least half the Y-direction width of the second connection portion, and the Y-direction center of the fourth connection portion is disposed on one side of the Y-direction from the Y-direction center of the third connection portion, at a distance of at least half the Y-direction width of the fourth connection portion. (Appendix 8) 8. The semiconductor device according to claim 1, wherein the first connecting portion and the second connecting portion are positioned differently from the first connecting portion in the Z direction, and the third connecting portion and the fourth connecting portion are positioned differently from the second connecting portion in the Z direction. (Appendix 9) When viewed in the Z direction, A semiconductor device according to any one of appendices 1 to 3 and 5 to 8, wherein the outer edges of the first connecting portion of the first plate-shaped lead and the second connecting portion of the second plate-shaped lead have at least one step that changes in the Y direction. (Appendix 10) 10. The semiconductor device according to any one of claims 1 to 9, wherein the area of ​​the second connection portion is smaller than the area of ​​the first connection portion, and the area of ​​the fourth connection portion is smaller than the area of ​​the third connection portion. (Appendix 11) The semiconductor device according to any one of claims 1 to 10, wherein the first connection portion is provided inside an outer periphery of the first semiconductor element, and the third connection portion is provided inside an outer periphery of the second semiconductor element. (Appendix 12) a height in the Z direction of a surface of the first connection portion on the side of the first semiconductor element is different from a height in the Z direction of a surface of the second connection portion on the side of the third lead frame, 12. The semiconductor device according to any one of claims 1 to 11, wherein the height in the Z direction of the surface of the third connection portion facing the second semiconductor element is different from the height in the Z direction of the surface of the fourth connection portion facing the third lead frame. (Appendix 13) the first connecting portion, the second connecting portion, and the first linking portion have the same thickness; 13. The semiconductor device according to any one of claims 1 to 12, wherein the third connecting portion, the fourth connecting portion, and the second linking portion have the same thickness. (Appendix 14) a thickness of the first connection portion is formed to be thinner than a thickness of the second connection portion by at least the thickness of the first semiconductor element; The semiconductor device according to any one of claims 1 to 12, wherein the thickness of the third connection portion is thinner than the thickness of the fourth connection portion by at least the thickness of the second semiconductor element. (Appendix 15) The semiconductor device according to any one of claims 1 to 14, wherein the first lead frame, the second lead frame, the third lead frame, the first semiconductor element, the second semiconductor element, the first plate-shaped lead, and the second plate-shaped lead are sealed with an insulating resin member. (Appendix 16) 16. The semiconductor device according to any one of claims 1 to 15, wherein each of the first connection portion, the second connection portion, the third connection portion, and the fourth connection portion has a first through hole penetrating in the Z direction. (Appendix 17) 17. The semiconductor device according to any one of claims 1 to 16, further comprising an insulating heat dissipation member thermally connected to a first second surface of the first lead frame opposite the first first surface, a second second surface of the second lead frame opposite the second first surface, and a third second surface of the third lead frame opposite the third first surface. (Appendix 18) 18. The semiconductor device according to claim 17, wherein each of the first connecting portion and the second connecting portion has at least one second through-hole penetrating in the Z direction. (Appendix 19) a cross-sectional area of ​​the first coupling portion cut in the Z direction, including the second through hole, is larger than a cross-sectional area of ​​an end portion of the first connecting portion on the other side in the X direction opposite to the first coupling portion and a cross-sectional area of ​​an end portion of the second connecting portion on the one side in the X direction opposite to the first coupling portion, 19. The semiconductor device according to claim 18, wherein a cross-sectional area of ​​the second connecting portion cut in the Z direction, including the second through hole, is larger than a cross-sectional area of ​​an end of the third connecting portion on one side in the X direction opposite the second connecting portion and a cross-sectional area of ​​an end of the fourth connecting portion on the other side in the X direction opposite the second connecting portion. (Appendix 20) 20. The semiconductor device according to claim 18, wherein the second through holes are provided at positions adjacent to outer edges of the first connecting portion and the second connecting portion. (Appendix 21) 21. The semiconductor device according to any one of claims 18 to 20, wherein the second through hole has an opening on one side in the Z direction that is different in size from an opening on the other side in the Z direction. [Explanation of symbols]

[0095] 1 semiconductor device, 11 first lead frame, 11a first terminal portion, 11b first mounting portion, 11b1 first first surface, 11b2 first second surface, 11c straight lead, 12 second lead frame, 12a second terminal portion, 12b second mounting portion, 12b1 second first surface, 12b2 second second surface, 12c straight lead, 13 third lead frame, 13a third terminal portion, 13b third mounting portion, 13b1 third first surface, 13b2 third second surface, 13c straight lead, 21 first semiconductor element, 22 second semiconductor element, 3 first plate-like lead, 31 first connection portion, 31a first connection portion center line, 32 second connection portion, 32a second connection portion center line, 33 first through hole, 34 second through hole, 35 First connecting portion, 36 protruding portion, 300 step portion, 4 second plate-like lead, 41 third connecting portion, 42 fourth connecting portion, 43 first through hole, 44 second through hole, 45 second connecting portion, 5 insulating heat dissipation member, 51 resin member layer, 52 heat dissipation member layer, 6 resin member, 7 joining member

Claims

1. a first lead frame having electrical conductivity; a first semiconductor element electrically and thermally connected to a first surface of the first lead frame; a third lead frame that is arranged next to the first lead frame with a gap therebetween, has a third first surface on the same side as the first first surface, and has conductivity; a second lead frame that is electrically conductive and that is arranged on the opposite side of the third lead frame from the first lead frame, with a gap between the third lead frame and the third lead frame, and that has a second first surface on the same side as the first first surface; a second semiconductor element electrically and thermally connected to the second first surface of the second lead frame; a first plate-like lead having conductivity, the first plate-like lead including a first connection portion bonded via a bonding member to a surface of the first semiconductor element opposite to the first lead frame side, a second connection portion bonded via a bonding member to the third first surface, and a first linking portion linking the first connection portion and the second connection portion; a third connecting portion bonded via a bonding member to a surface of the second semiconductor element opposite to the second lead frame side, a fourth connecting portion bonded via a bonding member to the third first surface, and a second connecting portion connecting the third connecting portion and the fourth connecting portion, and a conductive second plate-like lead; a direction in which the first lead frame, the third lead frame, and the second lead frame are arranged is defined as an X direction, a direction parallel to the third first surface and perpendicular to the X direction is defined as a Y direction, and a direction perpendicular to the X direction and the Y direction is defined as a Z direction; When viewed in the Z direction, a positional range of the first semiconductor element in the Y direction and a positional range of the second semiconductor element in the Y direction at least partially overlap with each other; The second connection portion and the fourth connection portion are arranged in the Y direction.

2. When viewed in the Z direction, 2. The semiconductor device according to claim 1, wherein a center of the first semiconductor element in the Y direction and a center of the second semiconductor element in the Y direction are aligned in the Y direction.

3. 2. The semiconductor device according to claim 1, wherein the first plate-shaped lead and the second plate-shaped lead have the same shape.

4. When viewed in the Z direction, a center of the first connection portion in the Y direction and a center of the second connection portion in the Y direction are aligned in the Y direction, and the first linking portion extends in the X direction; Alternatively, the semiconductor device according to claim 1, wherein the Y-direction center of the third connection portion and the Y-direction center of the fourth connection portion are aligned in the Y-direction, and the second linking portion extends in the X-direction.

5. a plurality of the first semiconductor elements and a plurality of the second semiconductor elements; 2. The semiconductor device according to claim 1, wherein the number of the plurality of first semiconductor elements is the same as the number of the plurality of second semiconductor elements.

6. The semiconductor device according to claim 5 , wherein the plurality of first semiconductor elements and the plurality of second semiconductor elements are aligned in the Y direction.

7. a center portion in the Y direction of the second connection portion is disposed on one side in the Y direction from a center portion in the Y direction of the first connection portion, the center portion in the Y direction being spaced apart by at least half the width of the second connection portion in the Y direction; and a center portion in the Y direction of the fourth connection portion is disposed on the other side in the Y direction from a center portion in the Y direction of the third connection portion, the center portion in the Y direction being spaced apart by at least half the width of the fourth connection portion in the Y direction. Alternatively, the Y-direction center of the second connection portion is positioned on the other side of the Y-direction from the Y-direction center of the first connection portion, at a distance of at least half the Y-direction width of the second connection portion, and the Y-direction center of the fourth connection portion is positioned on one side of the Y-direction from the Y-direction center of the third connection portion, at a distance of at least half the Y-direction width of the fourth connection portion.

8. 2. The semiconductor device according to claim 1, wherein the first connection portion and the second connection portion are positioned differently in the Z direction from the first connecting portion, and the third connection portion and the fourth connection portion are positioned differently in the Z direction from the second connecting portion.

9. When viewed in the Z direction, 2. The semiconductor device according to claim 1, wherein outer edges of the first connecting portion of the first plate-like lead and the second connecting portion of the second plate-like lead have at least one step that changes in the Y direction.

10. 2. The semiconductor device according to claim 1, wherein the area of ​​the second connection portion is smaller than the area of ​​the first connection portion, and the area of ​​the fourth connection portion is smaller than the area of ​​the third connection portion.

11. 2 . The semiconductor device according to claim 1 , wherein the first connection portion is provided inside an outer periphery of the first semiconductor element, and the third connection portion is provided inside an outer periphery of the second semiconductor element.

12. a height in the Z direction of a surface of the first connection portion on the side of the first semiconductor element is different from a height in the Z direction of a surface of the second connection portion on the side of the third lead frame, 2. The semiconductor device according to claim 1, wherein the Z-direction height of the surface of the third connection portion facing the second semiconductor element is different from the Z-direction height of the surface of the fourth connection portion facing the third lead frame.

13. the first connecting portion, the second connecting portion, and the first linking portion have the same thickness; The semiconductor device according to claim 1 , wherein the third connecting portion, the fourth connecting portion, and the second linking portion have the same thickness.

14. a thickness of the first connection portion is formed to be thinner than a thickness of the second connection portion by at least the thickness of the first semiconductor element; 2. The semiconductor device according to claim 1, wherein the thickness of the third connecting portion is smaller than the thickness of the fourth connecting portion by at least the thickness of the second semiconductor element.

15. 2. The semiconductor device according to claim 1, wherein the first lead frame, the second lead frame, the third lead frame, the first semiconductor element, the second semiconductor element, the first plate-shaped lead, and the second plate-shaped lead are sealed with an insulating resin member.

16. The semiconductor device according to claim 1 , wherein each of the first connection portion, the second connection portion, the third connection portion, and the fourth connection portion has a first through-hole penetrating in the Z direction.

17. 16. The semiconductor device of claim 1, further comprising an insulating heat dissipation member thermally connected to a first second surface of the first lead frame opposite the first first surface, a second second surface of the second lead frame opposite the second first surface, and a third second surface of the third lead frame opposite the third first surface.

18. The semiconductor device according to claim 17 , wherein each of the first connecting portion and the second connecting portion has at least one second through-hole penetrating in the Z direction.

19. a cross-sectional area of ​​the first coupling portion cut in the Z direction, including the second through-hole portion, is larger than a cross-sectional area of ​​an end portion of the first connecting portion on the other side in the X direction opposite to the first coupling portion and a cross-sectional area of ​​an end portion of the second connecting portion on the one side in the X direction opposite to the first coupling portion, 19. The semiconductor device according to claim 18, wherein a cross-sectional area of ​​the second connecting portion cut in the Z direction, including the second through hole portion, is larger than a cross-sectional area of ​​an end portion of the third connecting portion on one side in the X direction opposite the second connecting portion, and a cross-sectional area of ​​an end portion of the fourth connecting portion on the other side in the X direction opposite the second connecting portion.

20. The semiconductor device according to claim 18 , wherein the second through holes are provided at positions adjacent to outer edges of the first connecting portion and the second connecting portion.

21. 19. The semiconductor device according to claim 18, wherein the second through hole has an opening on one side in the Z direction that is different in size from an opening on the other side in the Z direction.

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