Semiconductor Devices

Abstract

This semiconductor device comprises: a first lead; a second lead separated from the first lead in a first direction; a first semiconductor element disposed on the first lead; a second semiconductor element disposed on the second lead; and encapsulating resin covering the first lead, the second lead, the first semiconductor element, and the second semiconductor element. The first semiconductor element and the second semiconductor element have a first element side and a second element side, respectively. The first and second element sides are opposed to each other in the first direction. The encapsulating resin has a first-direction central plane at an equal distance from the first element side and the second element side in the first direction. The first lead includes a first main part, and the second lead includes a second main part. The first main part and the second main part are separated from each other with reference to the first-direction central plane.

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Various configurations have been proposed for semiconductor devices equipped with semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes multiple leads, a semiconductor element, and a sealing resin. A semiconductor element (6) is mounted on a lead (3). Other leads (1, 2) different from the lead (3) on which the semiconductor element is mounted are arranged at a distance from the lead (3) in a direction (x) perpendicular to the thickness direction (z) of the lead (3). A sealing resin (8) covers each of the multiple leads and the semiconductor element, and is rectangular when viewed in the thickness direction (z).

[0003] The semiconductor device described in Patent Document 1 is surface-mounted on, for example, a circuit board of various devices. During use of the semiconductor device, the circuit board on which the semiconductor device is mounted may warp due to, for example, the influence of heat. When such deformation of the circuit board occurs, stress acts on the encapsulating resin and leads. If a large stress acts between the leads spaced apart from each other in the direction x in the encapsulating resin, there is a concern that the encapsulating resin may peel off from the leads or cracks may occur in the encapsulating resin. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-88035 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device suitable for suppressing peeling of the sealing resin, etc. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure includes a first lead having a first main surface facing one side in a thickness direction and a first back surface facing the other side, a second lead having a second main surface facing one side in the thickness direction and a second back surface facing the other side and spaced apart from the first lead on one side in a first direction perpendicular to the thickness direction, a first semiconductor element disposed on the first main surface, a second semiconductor element disposed on the second main surface, and a sealing resin covering a portion of the first lead, a portion of the second lead, the first semiconductor element, and the second semiconductor element. The first semiconductor element and the second semiconductor element each have a first element side surface facing one side in the first direction and a second element side surface facing the other side. The first lead includes a first main portion located on the other side in the first direction with respect to a central cross section in the first direction of the sealing resin equidistant from the first element side surface of the first semiconductor element and the second element side surface of the second semiconductor element in the first direction, and a first extending portion extending from the first main portion to one side in the first direction. The second lead includes a second main portion located on the one side in the first direction with respect to the central cross section in the first direction. [Effects of the Invention]

[0007] According to the semiconductor device of the present disclosure, peeling of the sealing resin can be suppressed.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a perspective view (through a sealing resin) showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 3]FIG. 3 is a plan view (through the sealing resin) of the semiconductor device shown in FIG. [Figure 4] FIG. 4 is a bottom view of the semiconductor device shown in FIG. [Figure 5] FIG. 5 is a front view of the semiconductor device shown in FIG. [Figure 6] FIG. 6 is a right side view of the semiconductor device shown in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a diagram showing a circuit configuration of the semiconductor device according to the first embodiment of the present disclosure. [Figure 11] FIG. 11 is a cross-sectional view similar to FIG. 7, showing the semiconductor device shown in FIG. 1 mounted on a circuit board. [Figure 12] FIG. 12 is a plan view similar to FIG. 3, showing a semiconductor device according to a first modification of the first embodiment. [Figure 13] FIG. 13 is a front view of the semiconductor device shown in FIG. [Figure 14] FIG. 14 is a plan view similar to FIG. 3, showing a semiconductor device according to a second modification of the first embodiment. [Figure 15] FIG. 15 is a front view of the semiconductor device shown in FIG. [Figure 16] FIG. 16 is a plan view similar to FIG. 3, showing a semiconductor device according to a third modification of the first embodiment. [Figure 17] FIG. 17 is a front view of the semiconductor device shown in FIG. [Figure 18] FIG. 18 is a plan view similar to FIG. 3, showing a semiconductor device according to a fourth modification of the first embodiment. [Figure 19] FIG. 19 is a front view of the semiconductor device shown in FIG. [Figure 20] FIG. 20 is a plan view similar to FIG. 3, showing a semiconductor device according to a fifth modification of the first embodiment. [Figure 21] FIG. 21 is a front view of the semiconductor device shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0012] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on an object B" and "a certain object A is formed on an object B" include "a certain object A is formed directly on an object B" and "a certain object A is formed on an object B with another object interposed between the objects A and B." Similarly, the terms "a certain object A is disposed on an object B" and "a certain object A is disposed on an object B" include "a certain object A is disposed directly on an object B" and "a certain object A is disposed on an object B with another object interposed between the objects A and B," unless otherwise specified. Similarly, the term "a certain object A is located on an object B" includes "a certain object A is located on an object B in contact with the object B" and "a certain object A is located on an object B with another object interposed between the objects A and B," unless otherwise specified. Additionally, unless otherwise specified, "something A overlaps something B when viewed from a certain direction" includes "something A overlaps the entirety of something B" and "something A overlaps part of something B."

[0013] 1 to 14 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A10 of this embodiment includes a first lead 1, a second lead 2, a first semiconductor element 3A, a second semiconductor element 3B, a conductive member 4, and a sealing resin 5. As shown in Fig. 1, the package format of the semiconductor device A10 is a QFN (Quad For Non-Lead Package).

[0014] FIG. 1 is a perspective view showing the semiconductor device A10. FIG. 2 is a perspective view showing the semiconductor device A10. FIG. 3 is a plan view showing the semiconductor device A10. FIG. 4 is a bottom view showing the semiconductor device A10. FIG. 5 is a front view showing the semiconductor device A10. FIG. 6 is a right side view showing the semiconductor device A10. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a circuit diagram of the semiconductor device A10. For ease of understanding, FIGS. 2 and 3 are shown through the sealing resin 5. In these figures, the through sealing resin 5 is shown by an imaginary line (two-dot chain line). The conductive member 4 is omitted in FIG. 3.

[0015] The semiconductor device A10 shown in these figures is surface-mounted on a circuit board of various devices. The shape of the semiconductor device A10 when viewed in the thickness direction is rectangular. In describing the semiconductor device A10, the thickness direction of the semiconductor device A10 is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z and along one side of the semiconductor device A10 (the left-right direction in FIG. 3) is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x (the up-down direction in FIG. 3) is referred to as the "second direction y." The size of the semiconductor device A10 is not particularly limited, and in this embodiment, for example, the first direction x dimension is approximately 0.4 to 8.0 mm, the second direction y dimension is approximately 0.2 to 8.0 mm, and the thickness direction z dimension is approximately 0.15 to 1.0 mm.

[0016] The first lead 1 and the second lead 2 are formed, for example, by punching or etching a metal plate. The first lead 1 and the second lead 2 are made of a material such as Cu (copper) or Ni (nickel), or an alloy thereof. Each of the first lead 1 and the second lead 2 is partially covered with a sealing resin 5.

[0017] 3, the first lead 1 is disposed on the left side of the semiconductor device A10 in the drawing (the other side in the first direction x). The second lead 2 is disposed on the right side of the semiconductor device A10 in the drawing (one side in the first direction x). The first lead 1 and the second lead 2 are disposed spaced apart from each other in the first direction x.

[0018] As shown in FIGS. 3 to 5, 7, and 8, the first lead 1 has a first main surface 101, a first back surface 102, and a first concave surface 103. The first main surface 101 faces one side in the thickness direction z. The first main surface 101 is covered with a sealing resin 5. The first back surface 102 and the first concave surface 103 face the opposite side from the first main surface 101 (the other side in the thickness direction z). The first back surface 102 is exposed from the sealing resin 5. The first concave surface 103 is located closer to one side in the thickness direction z than the first back surface 102 and is closer to the first main surface 101 than the first back surface 102. The first concave surface 103 overlaps a part of the first main surface 101 when viewed in the thickness direction z. The first concave surface 103 is located closer to one side in the first direction x than the first back surface 102 when viewed in the thickness direction z. The first concave surface 103 is covered with a sealing resin 5. The first concave surface 103 is formed by, for example, half-etching processing.

[0019] The first lead 1 includes a first main portion 11, a first extending portion 12, a first terminal portion 13, a first connecting portion 14, and a second connecting portion 15. As shown in Fig. 3, the first main portion 11 is rectangular when viewed in the thickness direction z. In Fig. 3, the first main portion 11 is located to the left of the center of the semiconductor device A10 in the first direction x (the other side in the first direction x).

[0020] As shown in FIGS. 3 to 5 and 7 , the first main portion 11 has a part of the first main surface 101, a part of the first back surface 102, a part of the first concave surface 103, and a first inner side surface 111. The first main surface 101 of the first main portion 11 is a portion on which the first semiconductor element 3A is mounted. The first back surface 102 of the first main portion 11 is a portion that becomes a back surface terminal. The first inner side surface 111 is located at one end of the first main portion 11 in the first direction x and faces one side in the first direction x. The first inner side surface 111 is connected to both the first main surface 101 and the first concave surface 103.

[0021] The first extending portion 12 is connected to the first main portion 11 and extends from the first inner surface 111 of the first main portion 11 to one side in the first direction x. In this embodiment, the first extending portion 12 extends from a portion of the first main portion 11 closer to one side in the second direction y to one side in the first direction x. In FIG. 3, the first extending portion 12 is hatched.

[0022] As shown in FIGS. 3 to 5 and 7 , the first extension portion 12 has a portion of the first main surface 101, a portion of the first concave surface 103, a first tip surface 121, a first curved surface 122, and a first intermediate surface 123. The first tip surface 121 is located at one end of the first extension portion 12 in the first direction x and faces one side of the first direction x. The first tip surface 121 is connected to both the first main surface 101 and the first concave surface 103. In this embodiment, the first tip surface 121 is located at the center of the semiconductor device A10 in the first direction x. The first curved surface 122 is a concave curved surface that has an arc shape when viewed in the thickness direction z. The first curved surface 122 is connected to both the first main surface 101 and the first concave surface 103 and the first tip surface 121. The first intermediate surface 123 faces one side of the first direction x. The first intermediate surface 123 is located between the first tip surface 121 and the first inner surface 111 of the first main portion 11 in the first direction x. The first intermediate surface 123 is located on the other side of the first tip surface 121 in the second direction y. The first intermediate surface 123 is connected to both the first main surface 101 and the first concave surface 103, and to the first curved surface 122.

[0023] As shown in Figures 3, 4, and 7, the first terminal 13 is connected to the first main portion 11 and has a rectangular shape when viewed in the thickness direction z. The first terminal 13 is connected to the other end of the first main portion 11 in the first direction x. The dimension of the first terminal 13 in the second direction y is smaller than the dimension of the first main portion 11 in the second direction y. The first terminal 13 is located at the center of the first main portion 11 in the second direction y when viewed in the first direction x. The first terminal 13 has a part of the first main surface 101, a part of the first back surface 102, and a first end surface 131. The first end surface 131 is located at the other end of the first terminal 13 in the first direction x and faces the other side in the first direction x. The first end surface 131 is exposed from the sealing resin 5.

[0024] As shown in Figures 3 and 8, the first connecting portion 14 is connected to the first main portion 11 and has a rectangular shape when viewed in the thickness direction z. The first connecting portion 14 is connected to one side end of the first main portion 11 in the second direction y. The dimension of the first connecting portion 14 in the first direction x is smaller than the dimension of the first main portion 11 in the first direction x. The first connecting portion 14 is located at the center of the first main portion 11 in the first direction x when viewed in the second direction y. The first connecting portion 14 has a first connecting portion end face 141. The first connecting portion end face 141 is located at one side end of the first connecting portion 14 in the second direction y and faces one side in the second direction y. The first connecting portion end face 141 is exposed from the sealing resin 5.

[0025] The second connecting portion 15 is connected to the first main portion 11 and has a rectangular shape when viewed in the thickness direction z. The second connecting portion 15 is connected to the other end of the first main portion 11 in the second direction y. The dimension of the second connecting portion 15 in the first direction x is smaller than the dimension of the first main portion 11 in the first direction x. The second connecting portion 15 is located at the center of the first main portion 11 in the first direction x when viewed in the second direction y. The second connecting portion 15 has a second connecting portion end face 151. The second connecting portion end face 151 is located at the other end of the second connecting portion 15 in the second direction y and faces the other side in the second direction y. The second connecting portion end face 151 is exposed from the sealing resin 5.

[0026] As shown in FIGS. 3 to 5 and 7 , the second lead 2 has a second main surface 201, a second back surface 202, and a second concave surface 203. The second main surface 201 faces one side in the thickness direction z. The second main surface 201 is located at the same position as the first main surface 101 of the first lead 1 in the thickness direction z. The second main surface 201 is covered with a sealing resin 5. The second back surface 202 and the second concave surface 203 face the opposite side to the second main surface 201 (the other side in the thickness direction z). The second back surface 202 is exposed from the sealing resin 5. The second concave surface 203 is located closer to one side in the thickness direction z than the second back surface 202 and is closer to the second main surface 201 than the second back surface 202. The second concave surface 203 overlaps a part of the second main surface 201 when viewed in the thickness direction z. When viewed in the thickness direction z, the second concave surface 203 is located on the other side in the first direction x than the second back surface 202. The second concave surface 203 is covered with a sealing resin 5. The second concave surface 203 is formed by, for example, half-etching processing.

[0027] The second lead 2 includes a second main portion 21, a second extending portion 22, a second terminal portion 23, a third connecting portion 24, and a fourth connecting portion 25. As shown in FIG. 3, the second main portion 21 is rectangular when viewed in the thickness direction z. In FIG. 3, the second main portion 21 is located to the right of the center of the semiconductor device A10 in the first direction x (on one side in the first direction x). The first main portion 11 and the second main portion 21 in the above-mentioned first lead 1 are spaced apart in the first direction x and are arranged symmetrically (bilaterally symmetrical in FIG. 3) with respect to the center of the semiconductor device A10 in the first direction x.

[0028] As shown in FIGS. 3 to 5 and 7 , the second main portion 21 has a part of the second main surface 201, a part of the second back surface 202, a part of the second concave surface 203, and a second inner side surface 211. The second main surface 201 of the second main portion 21 is a portion on which the second semiconductor element 3B is mounted. The second back surface 202 of the second main portion 21 is a portion that becomes a back surface terminal. The second inner side surface 211 is located at the other end of the second main portion 21 in the first direction x and faces the other side in the first direction x. The second inner side surface 211 is connected to both the second main surface 201 and the second concave surface 203.

[0029] The second extending portion 22 is connected to the second main portion 21 and extends from the second inner surface 211 of the second main portion 21 to the other side in the first direction x. In this embodiment, the second extending portion 22 extends from a portion of the second main portion 21 closer to the other side in the second direction y to the other side in the first direction x. In FIG. 3, the second extending portion 22 is hatched.

[0030] As shown in FIGS. 3 to 5 and 7 , the second extending portion 22 has a portion of the second main surface 201, a portion of the second concave surface 203, a second tip surface 221, a second curved surface 222, and a second intermediate surface 223. The second tip surface 221 is located at the other end of the second extending portion 22 in the first direction x and faces the other side in the first direction x. The second tip surface 221 is connected to both the second main surface 201 and the second concave surface 203. In this embodiment, the second tip surface 221 is located at the center of the semiconductor device A10 in the first direction x. The second curved surface 222 is a concave curved surface that has an arc shape when viewed in the thickness direction z. The second curved surface 222 is connected to both the second main surface 201 and the second concave surface 203 and the second tip surface 221. The second intermediate surface 223 faces the other side in the first direction x. The second intermediate surface 223 is located between the second tip surface 221 and the second inner surface 211 of the second main portion 21 in the first direction x. The second intermediate surface 223 is located on one side of the second tip surface 221 in the second direction y. The second intermediate surface 223 is connected to both the second main surface 201 and the second concave surface 203, and to the second curved surface 222.

[0031] As shown in FIGS. 3, 4, and 7, the second terminal 23 is connected to the second main portion 21 and has a rectangular shape when viewed in the thickness direction z. When viewed in the first direction x, the second terminal 23 is connected to one side end of the second main portion 21 in the first direction x. The dimension of the second terminal 23 in the second direction y is smaller than the dimension of the second main portion 21 in the second direction y. When viewed in the first direction x, the second terminal 23 is located at the center of the second main portion 21 in the second direction y. The second terminal 23 has a part of the second main surface 201, a part of the second back surface 202, and a second end surface 231. The second end surface 231 is located at one side end of the second terminal 23 in the first direction x and faces one side in the first direction x. The second end surface 231 is exposed from the sealing resin 5.

[0032] As shown in Figures 3 and 9, the third connecting portion 24 is connected to the second main portion 21 and has a rectangular shape when viewed in the thickness direction z. The third connecting portion 24 is connected to one side end of the second main portion 21 in the second direction y. The dimension of the third connecting portion 24 in the first direction x is smaller than the dimension of the second main portion 21 in the first direction x. The third connecting portion 24 is located at the center of the second main portion 21 in the first direction x when viewed in the second direction y. The third connecting portion 24 has a third connecting portion end face 241. The third connecting portion end face 241 is located at one side end of the third connecting portion 24 in the second direction y and faces one side in the second direction y. The third connecting portion end face 241 is exposed from the sealing resin 5.

[0033] The fourth connecting portion 25 is connected to the second main portion 21 and has a rectangular shape when viewed in the thickness direction z. The fourth connecting portion 25 is connected to the other end of the second main portion 21 in the second direction y. The dimension of the fourth connecting portion 25 in the first direction x is smaller than the dimension of the first main portion 11 in the first direction x. The second connecting portion 15 is located at the center of the second main portion 21 in the first direction x when viewed in the second direction y. The fourth connecting portion 25 has a fourth connecting portion end face 251. The fourth connecting portion end face 251 is located at the other end of the fourth connecting portion end face 251 in the second direction y and faces the other side in the second direction y. The fourth connecting portion end face 251 is exposed from the sealing resin 5.

[0034] The first semiconductor element 3A and the second semiconductor element 3B are elements that perform the electrical functions of the semiconductor device A10. The types of the first semiconductor element 3A and the second semiconductor element 3B are not particularly limited. In this embodiment, the first semiconductor element 3A and the second semiconductor element 3B are the same type of element, and both are Zener diodes. In this embodiment, each of the first semiconductor element 3A and the second semiconductor element 3B has a rectangular shape when viewed in the thickness direction z.

[0035] As shown in FIGS. 3 and 7, the first semiconductor element 3A is disposed on the first main surface 101 of the first main portion 11 (first lead 1). The first semiconductor element 3A has a first element side surface 301, a second element side surface 302, a third element side surface 303, a fourth element side surface 304, a first electrode 31, and a second electrode 32. The first element side surface 301, the second element side surface 302, the third element side surface 303, and the fourth element side surface 304 are sandwiched between a surface facing one side and a surface facing the other side in the thickness direction z of the first semiconductor element 3A, and are connected to both the surface facing one side and the surface facing the other side in the thickness direction z. The first element side surface 301 faces one side in the first direction x. The second element side surface 302 faces the other side in the first direction x. The third element side surface 303 faces one side in the second direction y. The fourth element side surface 304 faces the other side in the second direction y. The first electrode 31 is provided on a surface of the first semiconductor element 3A facing one side in the thickness direction z. The second electrode 32 is provided on a surface of the first semiconductor element 3A facing the other side in the thickness direction z. In this embodiment, the first electrode 31 is an anode (negative electrode), and the second electrode 32 is a cathode (negative electrode). The first semiconductor element 3A is electrically joined to the first main surface 101 (first main portion 11, first lead 1) via a conductive bonding material 39. The conductive bonding material 39 electrically connects the first main surface 101 and the second electrode 32. The constituent material of the conductive bonding material 39 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal.

[0036] The second semiconductor element 3B is disposed on the second main surface 201 of the second main portion 21 (second lead 2). The second semiconductor element 3B has a first element side surface 301, a second element side surface 302, a third element side surface 303, a fourth element side surface 304, a first electrode 31, and a second electrode 32. The first element side surface 301, the second element side surface 302, the third element side surface 303, and the fourth element side surface 304 are each sandwiched between a surface facing one side and a surface facing the other side in the thickness direction z of the second semiconductor element 3B, and are connected to both the surface facing one side and the surface facing the other side in the thickness direction z. The first element side surface 301 faces one side in the first direction x. The second element side surface 302 faces the other side in the first direction x. The third element side surface 303 faces one side in the second direction y. The fourth element side surface 304 faces the other side in the second direction y. The first electrode 31 is provided on a surface of the second semiconductor element 3B facing one side in the thickness direction z. The second electrode 32 is provided on a surface of the second semiconductor element 3B facing the other side in the thickness direction z. In this embodiment, the first electrode 31 is an anode (negative electrode), and the second electrode 32 is a cathode (negative electrode). The second semiconductor element 3B is electrically joined to the second main surface 201 (second main portion 21, second lead 2) via a conductive bonding material 39. The conductive bonding material 39 electrically connects the second main surface 201 and the second electrode 32. The constituent material of the conductive bonding material 39 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal.

[0037] The conductive member 4 provides electrical continuity between the first electrode 31 of the first semiconductor element 3A and the first electrode 31 of the second semiconductor element 3B. The specific configuration of the conductive member 4 is not limited in any way, and examples thereof include wires and ribbons made of metal. Examples of metals constituting the conductive member 4 include metals such as Au (gold) and Al (aluminum), and alloys thereof. While the present embodiment illustrates an example in which one conductive member 4 is provided, a configuration in which two or more conductive members 4 are provided may also be used.

[0038] 10 is a diagram showing the circuit configuration of a semiconductor device A10 of this embodiment. The first semiconductor element 3A and the second semiconductor element 3B are connected in series in the opposite directions. In the configuration shown in the figure, even if a voltage higher than the breakdown voltage is applied in either direction between the first lead 1 and the second lead 2, a current flows through the first semiconductor element 3A and the second semiconductor element 3B at a constant voltage.

[0039] The sealing resin 5 covers a portion of each of the first lead 1 and the second lead 2, the first semiconductor element 3A and the second semiconductor element 3B, and the conductive member 4. The sealing resin 5 is made of, for example, a black epoxy resin.

[0040] As shown in FIGS. 1 and 7 to 9, the sealing resin 5 has a resin main surface 51, a resin back surface 52, a first resin side surface 531, a second resin side surface 532, a third resin side surface 533, and a fourth resin side surface 534. The resin main surface 51 and the resin back surface 52 face opposite each other in the thickness direction z and are spaced apart. The resin main surface 51 faces one side in the thickness direction z. The resin back surface 52 faces the other side in the thickness direction z. As shown in FIG. 7, a first back surface 102 of the first lead 1 and a second back surface 202 of the second lead 2 are exposed from the resin back surface 52 so as to be flush with the resin back surface 52.

[0041] Each of the first resin side surface 531, the second resin side surface 532, the third resin side surface 533, and the fourth resin side surface 534 is sandwiched between the resin main surface 51 and the resin back surface 52 and is connected to both the resin main surface 51 and the resin back surface 52. As shown in FIG. 7 , the first resin side surface 531 and the second resin side surface 532 face opposite each other in the first direction x and are spaced apart. The first resin side surface 531 faces one side in the first direction x. The second resin side surface 532 faces the other side in the first direction x. The second end surface 231 of the second lead 2 is exposed from the first resin side surface 531 so as to be flush with the first resin side surface 531. The first end surface 131 of the first lead 1 is exposed from the second resin side surface 532 so as to be flush with the second resin side surface 532.

[0042] As shown in FIGS. 8 and 9 , the third resin side surface 533 and the fourth resin side surface 534 face opposite each other in the second direction y and are spaced apart. The third resin side surface 533 faces one side in the second direction y. The fourth resin side surface 534 faces the other side in the second direction y. From the third resin side surface 533, the first connecting portion end surface 141 of the first lead 1 and the third connecting portion end surface 241 of the second lead 2 are exposed so as to be flush with the third resin side surface 533. From the fourth resin side surface 534, the second connecting portion end surface 151 of the first lead 1 and the fourth connecting portion end surface 251 of the second lead 2 are exposed so as to be flush with the fourth resin side surface 534.

[0043] In Figures 7 and other figures, a cross section (first direction central cross section CS) of the sealing resin 5 equidistant in the first direction x from the first element side surface 301 of the first semiconductor element 3A and the second element side surface 302 of the second semiconductor element 3B is indicated by a dashed line. The first main portion 11 of the first lead 1 is located on the other side in the first direction x (left side in Figure 7) of the first direction central cross section CS. The second main portion 21 of the second lead 2 is located on one side in the first direction x (right side in Figure 7) of the first direction central cross section CS. The first main portion 11 and the second main portion 21 are spaced apart in the first direction x across the first direction central cross section CS. As shown in Figure 3, the first main portion 11 and the second main portion 21 are arranged symmetrically (bilaterally symmetrical in Figure 3) across the first direction central cross section CS when viewed in the thickness direction z. In this embodiment, the first tip surface 121 of the first extension portion 12 overlaps the first direction central cross section CS. Furthermore, the second tip surface 221 of the second extending portion 22 overlaps with the first direction central cross section CS. Here, the phrase "the first tip surface 121 (second tip surface 221) overlaps with the first direction central cross section CS" does not necessarily mean that the tip surface 121 (221) strictly overlaps with the first direction central cross section CS, but rather is a concept that includes errors that may occur due to the manufacturing precision of the leads 1 and 2 and the sealing resin 5. This also applies to modified examples described later with reference to FIG. 12 and subsequent figures.

[0044] Next, the effects of this embodiment will be described.

[0045] The semiconductor device A10 is used in a state where it is surface-mounted on a circuit board. FIG. 11 is a cross-sectional view showing the state where the semiconductor device A10 is mounted on the circuit board 6. The semiconductor device A10 is joined to circuit wiring (not shown) formed on the circuit board 6, for example, via solder 7. In the semiconductor device A10, the first back surface 102 and the second back surface 202 are exposed from the sealing resin 5 as back surface terminals and are joined to the circuit wiring by the solder 7. In addition, the first end surface 131 and the second end surface 231 are exposed from the sealing resin 5 as terminals, and solder fillets 71 are formed between the first end surface 131 and the second end surface 231 and the circuit board.

[0046] The circuit board 6 on which the semiconductor device A10 is mounted may warp due to the influence of heat, etc. When warping occurs in the circuit board 6 such that both sides of the semiconductor device A10 in the first direction x are displaced to the other side in the thickness direction z (downward in FIG. 10), a relatively large stress acts on the sealing resin 5 in the first direction x in a portion between the first main portion 11 of the first lead 1 and the second main portion 21 of the second lead 2.

[0047] In the semiconductor device A10, the first lead 1 includes a first extension portion 12. The first extension portion 12 extends from a first main portion 11 located on the other side in the first direction x with respect to a first-direction central cross section CS of the sealing resin 5 to one side in the first direction x (the side where the second main portion 21 is arranged). With this configuration, stress can be reduced in the portion of the sealing resin 5 between the first main portion 11 and the first extension portion 12, and peeling of the sealing resin 5 from the leads 1 and 2 can be suppressed.

[0048] In the semiconductor device A10, the first tip surface 121 of the first extending portion 12 overlaps with the first direction central cross section CS of the sealing resin 5. With this configuration, the first extending portion 12 reaches the center of the sealing resin 5 in the first direction x, which is preferable in terms of suppressing peeling of the sealing resin 5 from the leads 1 and 2, etc.

[0049] In the semiconductor device A10, the second lead 2 includes a second extending portion 22. The second extending portion 22 extends from the second main portion 21 located on one side in the first direction x with respect to the first direction central cross section CS of the sealing resin 5 to the other side in the first direction x (the side where the first main portion 11 is located). By providing the second extending portion 22 in addition to the above-described first extending portion 12, stress can be further reduced in the portion of the sealing resin 5 between the first main portion 11 and the first extending portion 12. Therefore, peeling of the sealing resin 5 from the leads 1, 2, etc. can be effectively suppressed.

[0050] In the semiconductor device A10, the second tip surface 221 of the second extending portion 22 overlaps with the first direction central cross section CS of the sealing resin 5. With this configuration, the second extending portion 22 reaches the center of the sealing resin 5 in the first direction x, which is preferable in terms of suppressing peeling of the sealing resin 5 from the leads 1 and 2, etc.

[0051] The first extension portion 12 of the first lead 1 and the second extension portion 22 of the second lead 2 are located on one side and the other side of the second direction y as viewed in the first direction x. This arrangement of the first extension portion 12 and the second extension portion 22 makes it possible to prevent the first lead 1 (the first main portion 11 and the first extension portion 12) and the second lead 2 (the second main portion 21 and the second extension portion 22) from being excessively close to each other in the first direction x without increasing the distance between the first main portion 11 and the second main portion 21. Therefore, the semiconductor device A10 has a package structure that is preferable for increasing strength while suppressing an increase in package size and a decrease in withstand voltage.

[0052] The first lead 1 has a first concave surface 103 facing the opposite side in the thickness direction z. The first main portion 11 and the first extending portion 12 each include a portion of the first concave surface 103. The first concave surface 103 is covered with the sealing resin 5. The second lead 2 has a second concave surface 203 facing the opposite side in the thickness direction z. The second main portion 21 and the second extending portion 22 each include a portion of the second concave surface 203. The second concave surface 203 is covered with the sealing resin 5. This configuration prevents the first lead 1 (the first main portion 11 and the first extending portion 12) and the second lead 2 (the second main portions 21 and 22) from slipping out of the resin back surface 52 (the sealing resin 5). Therefore, the bonded state of the second electrodes 32 bonded to the first main surface 101 and the second main surface 201 is appropriately maintained.

[0053] The first semiconductor element 3A disposed on the first main surface 101 (first main portion 11) and the second semiconductor element 3B disposed on the second main surface 201 (second main portion 21) are the same type of element (Zener diode). Therefore, it is appropriate to arrange the first main portion 11 and the second main portion 21 supporting the first semiconductor element 3A and the second semiconductor element 3B symmetrically (bilaterally symmetrically in FIG. 3 ) across the first direction central cross section CS of the sealing resin 5 as viewed in the thickness direction z. In the semiconductor device A10, the first electrodes 31 of the semiconductor elements 3A and 3B are electrically connected by the conductive member 4. Meanwhile, the first extension portion 12 and the second extension portion 22 located between the first main portion 11 and the second main portion 21 are not connected to a conductive member (such as a wire) and do not function as an electrical conduction path. By intentionally providing such first extending portion 12 and second extending portion 22 between first main portion 11 and second main portion 21, the semiconductor device A10 has a package structure with increased strength.

[0054] Figures 12 and 13 show a semiconductor device according to a first modified example of the first embodiment. Figure 12 is a plan view similar to Figure 3 shown in the above embodiment. Figure 13 is a front view of the semiconductor device shown in Figure 12. In Figures 12 and subsequent figures, elements that are the same as or similar to those in the semiconductor device A10 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted where appropriate.

[0055] In the semiconductor device A11 of this modification, the shapes of the first extension portion 12 and the second extension portion 22 are different from those of the semiconductor device A10 of the above embodiment. In this modification, both the first extension portion 12 and the second extension portion 22 are rectangular when viewed in the thickness direction z. The first extension portion 12 has a part of the first main surface 101, a part of the first concave surface 103, and a first tip surface 121. The first tip surface 121 is located on the other side in the first direction x (the left side in FIG. 12 ) of the first direction central cross section CS of the sealing resin 5. The second extension portion 22 has a part of the second main surface 201, a part of the second concave surface 203, and a second tip surface 221. The second tip surface 221 is located on one side in the first direction x (the right side in FIG. 12 ) of the first direction central cross section CS of the sealing resin 5.

[0056] In the semiconductor device A11 of this modification, the first lead 1 also includes a first extension portion 12. The first extension portion 12 extends from the first main portion 11 located on the other side in the first direction x with respect to the first-direction central cross section CS of the sealing resin 5 to one side in the first direction x (the side where the second main portion 21 is located). This reduces the area in the sealing resin 5 between the first main portion 11 and the first extension portion 12 where large stress acts, even if warping occurs in the circuit board on which the semiconductor device A11 is mounted. This reduces the area in the sealing resin 5 where large stress acts, and thus prevents the sealing resin 5 from peeling off from the leads 1 and 2. In addition, within the same range of configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.

[0057] 14 and 15 show a semiconductor device according to a second modification of the first embodiment. Fig. 14 is a plan view similar to Fig. 3 shown in the above embodiment. Fig. 15 is a front view of the semiconductor device shown in Fig. 14.

[0058] In the semiconductor device A12 of this modification, the shapes of the first extension portion 12 and the second extension portion 22 differ from those of the semiconductor device A10 of the above embodiment. In this modification, the first extension portion 12 and the second extension portion 22 do not have a first intermediate surface 123 or a second intermediate surface 223, and each has a shape that combines a rectangular portion and a concave curved portion when viewed in the thickness direction z. The first extension portion 12 has a portion of the first main surface 101, a portion of the first concave surface 103, a first tip surface 121, and a first curved surface 122. The first tip surface 121 overlaps the first direction central cross section CS of the sealing resin 5. The second extension portion 22 has a portion of the second main surface 201, a portion of the second concave surface 203, a second tip surface 221, and a second curved surface 222. The second tip surface 221 overlaps the first direction central cross section CS of the sealing resin 5.

[0059] In the semiconductor device A12 of this modification, the first lead 1 also includes a first extending portion 12. The first extending portion 12 extends from the first main portion 11 located on the other side in the first direction x with respect to the first-direction central cross section CS of the sealing resin 5 to one side in the first direction x (the side where the second main portion 21 is located). This reduces the area in the sealing resin 5 between the first main portion 11 and the first extending portion 12 where large stress acts, even if warping occurs in the circuit board on which the semiconductor device A12 is mounted. This reduces the area in the sealing resin 5 where large stress acts, and thus prevents the sealing resin 5 from peeling off from the leads 1 and 2. In addition, within the same range of configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.

[0060] 16 and 17 show a semiconductor device according to a third modification of the first embodiment. Fig. 16 is a plan view similar to Fig. 3 shown in the above embodiment. Fig. 17 is a front view of the semiconductor device shown in Fig. 16.

[0061] In the semiconductor device A13 of this modification, the shape of the first extension portion 12 differs from that of the semiconductor device A10 of the above embodiment. The semiconductor device A13 does not have the second extension portion 22 of the semiconductor device A10 of the above embodiment. In this modification, the first extension portion 12 is rectangular when viewed in the thickness direction z. The first extension portion 12 has a part of the first main surface 101, a part of the first concave surface 103, and a first tip surface 121. The first tip surface 121 overlaps with the first direction central cross section CS of the sealing resin 5.

[0062] The semiconductor device A13 of this modified example also achieves the same effects as the semiconductor device A10 of the above embodiment within the scope of the same configuration as the semiconductor device A10 of the above embodiment.

[0063] 18 and 19 show a semiconductor device according to a third modification of the first embodiment. Fig. 18 is a plan view similar to Fig. 3 shown in the above embodiment. Fig. 19 is a front view of the semiconductor device shown in Fig. 18.

[0064] In the semiconductor device A14 of this modification, the shapes of the first extension portion 12 and the second extension portion 22 are different from those of the semiconductor device A10 of the above embodiment. In this modification, both the first extension portion 12 and the second extension portion 22 are rectangular when viewed in the thickness direction z. The first extension portion 12 has a part of the first main surface 101, a part of the first concave surface 103, and a first tip surface 121. The first tip surface 121 is located on one side in the first direction x (the right side in FIG. 18 ) of the first direction central cross section CS of the sealing resin 5. The second extension portion 22 has a part of the second main surface 201, a part of the second concave surface 203, and a second tip surface 221. The second tip surface 221 is located on the other side in the first direction x (the left side in FIG. 18 ) of the first direction central cross section CS of the sealing resin 5.

[0065] The semiconductor device A14 of this modified example also achieves the same effects as the semiconductor device A10 of the above embodiment within the scope of the same configuration as the semiconductor device A10 of the above embodiment.

[0066] In the semiconductor device A14, the first extension portion 12 extends from the first main portion 11 located on the other side of the first direction x with respect to the first direction central cross section CS, penetrates the first direction central cross section CS, and extends to one side of the first direction x beyond the first direction central cross section CS. The second extension portion 22 extends from the second main portion 21 located on one side of the first direction x with respect to the first direction central cross section CS, penetrates the first direction central cross section CS, and extends to the other side of the first direction x beyond the first direction central cross section CS. The semiconductor device A14 configured in this way has a more preferable package structure in terms of increasing strength.

[0067] 20 and 21 show a semiconductor device according to a fifth modification of the first embodiment. Fig. 20 is a plan view similar to Fig. 3 shown in the above embodiment. Fig. 21 is a front view of the semiconductor device shown in Fig. 20.

[0068] In the semiconductor device A15 of this modification, the shapes and arrangements of the first extension portions 12 and the second extension portions 22 differ from those of the semiconductor device A10 of the above embodiment. In this modification, the first lead 1 includes a plurality of first extension portions 12 (two in the illustrated example). The second lead 2 includes a plurality of second extension portions 22 (two in the illustrated example). The plurality of first extension portions 12 and the plurality of second extension portions 22 are both rectangular when viewed in the thickness direction z. When viewed in the first direction x, the first extension portions 12 and the second extension portions 22 are alternately arranged along the second direction y. Each of the plurality of first extension portions 12 has a part of the first main surface 101, a part of the first concave surface 103, and a first tip surface 121. The first tip surface 121 overlaps the first direction central cross section CS of the sealing resin 5. Each of the plurality of second extending portions 22 has a part of the second main surface 201, a part of the second concave surface 203, and a second tip surface 221. The second tip surface 221 overlaps with the central cross section CS of the sealing resin 5 in the first direction.

[0069] The semiconductor device A15 of this modified example also achieves the same effects as the semiconductor device A10 of the above embodiment within the scope of the same configuration as the semiconductor device A10 of the above embodiment.

[0070] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0071] In the above embodiment, the semiconductor device A10 and the like are packaged in a QFN format, but the package format of the semiconductor device is not limited to this. The semiconductor device of the present disclosure may also be applied to a QFP (Quad Flat Package) in which leads protrude from the side surfaces of the sealing resin.

[0072] In the above embodiment, the first back surface 102 of the first main portion 11 and the second back surface 202 of the second main portion 21 are exposed from the sealing resin 5 and function as back surface terminals, but the present invention is not limited to this. The first back surface 102 and the second back surface 202 may not function as back surface terminals.

[0073] The present disclosure includes the embodiments described in the following appendices.

[0074] Appendix 1. a first lead having a first main surface facing one side in a thickness direction and a first back surface facing the other side; a second lead having a second main surface facing one side in the thickness direction and a second back surface facing the other side, and spaced apart from the first lead on one side in a first direction perpendicular to the thickness direction; a first semiconductor element disposed on the first main surface and a second semiconductor element disposed on the second main surface; a sealing resin that covers a portion of the first lead, a portion of the second lead, the first semiconductor element, and the second semiconductor element, the first semiconductor element and the second semiconductor element each have a first element side surface facing one side in the first direction and a second element side surface facing the other side; the first lead includes a first main portion located on the other side in the first direction with respect to a central cross section in the first direction of the sealing resin equidistant from the first element side surface of the first semiconductor element and the second element side surface of the second semiconductor element in the first direction, and a first extending portion extending from the first main portion to one side in the first direction, The second lead includes a second main portion located on one side in the first direction with respect to the central cross section in the first direction. Appendix 2. the first extension portion has a first tip surface facing one side in the first direction, 2. The semiconductor device according to claim 1, wherein the first end face overlaps with the central cross section in the first direction or is located on one side of the central cross section in the first direction. Appendix 3. the first main portion has a first inner surface facing one side in the first direction, 3. The semiconductor device according to claim 1, wherein the first extension portion extends from the first inner surface to one side in the first direction. Appendix 4. 4. The semiconductor device according to claim 1, wherein the second lead includes the second extension portion extending from the second main portion to the other side in the first direction. Appendix 5. the second extending portion has a second tip surface facing the other side in the first direction, 5. The semiconductor device according to claim 4, wherein the second tip surface overlaps with the central cross section in the first direction or is located on the other side in the first direction than the central cross section in the first direction. Appendix 6. the second main portion has a second inner surface facing the other side in the first direction, 6. The semiconductor device according to claim 4, wherein the second extension portion extends from the second inner surface to the other side in the first direction. Appendix 7. The semiconductor device described in Appendix 6, wherein the first extension portion and the second extension portion are located on one side and the other side of a second direction perpendicular to both the thickness direction and the first direction when viewed in the first direction. Appendix 8. the first extension portion has a first intermediate surface facing one side in the first direction and positioned between the first tip surface and the first inner surface in the first direction; The semiconductor device described in Appendix 7, wherein the second extension portion faces the other side of the first direction and has a second intermediate surface located between the second tip surface and the second inner surface in the first direction. Appendix 9. the first intermediate surface is located on the other side in the second direction than the first tip surface, 9. The semiconductor device according to claim 8, wherein the second intermediate surface is located on one side of the second tip surface in the second direction. Appendix 10. 10. The semiconductor device according to any one of claims 7 to 9, wherein the first main surface and the second main surface are at the same position in the thickness direction. Appendix 11. 11. The semiconductor device according to claim 1, wherein the first rear surface and the second rear surface are exposed from the sealing resin. Appendix 12. 12. The semiconductor device according to claim 11, wherein the first main portion and the second main portion are arranged symmetrically across the first direction central cross section when viewed in the thickness direction. Appendix 13. the first lead has a first concave surface facing the other side in the thickness direction and covered with the sealing resin; the first main portion includes a portion of the first main surface, a portion of the first concave surface, and at least a portion of the first back surface, 13. The semiconductor device according to claim 12, wherein the first extension portion includes a portion of the first main surface and a portion of the first concave surface. Appendix 14. the second lead has a second concave surface facing the other side in the thickness direction and covered with the sealing resin; the second main portion includes a portion of the second main surface, a portion of the second concave surface, and at least a portion of the first back surface, 14. The semiconductor device according to claim 13, wherein the second extension portion includes a portion of the second main surface and a portion of the second concave surface. Appendix 15. 15. The semiconductor device according to any one of claims 12 to 14, wherein the first semiconductor element and the second semiconductor element are configured from elements of the same type. Appendix 16. 16. The semiconductor device according to claim 15, wherein the first semiconductor element and the second semiconductor element are each a Zener diode. [Explanation of symbols]

[0075] A10, A11, A12, A13, A14, A15: Semiconductor device 1: First lead 101: First main surface 102: First rear surface 103: First concave surface 11: First main portion 111: First inner surface 12: First extension part 121: First tip surface 122: First curved surface 123: First intermediate surface 13: First terminal part 131: First end surface 14: First connecting part 141: First connecting part end surface 15: Second connecting part 151: Second connecting part end face 2: Second lead 201: Second main surface 202: Second rear surface 203: Second concave surface 21: Second main portion 211: Second inner surface 22: Second extension part 221: Second tip surface 222: Second curved surface 223: Second intermediate surface 24: Third connecting part 241: Third connecting part end face 25: Fourth connecting part 251: Fourth connecting part end surface 3A: First semiconductor element 3B: Second semiconductor element 301: First element side 302: Second element side 303: Third element side 304: Fourth element side 31: 1st electrode 32: 2nd electrode 39: Conductive adhesive 4: Conductive material 5: Sealing resin 51: Resin main surface 52: Resin back surface 531: First resin side surface 532: Second resin side 533: Third resin side 534: 4th resin side 6: Circuit board 7: Solder 71: Solder fillet CS: 1st direction center cross section x: 1st direction y: Second direction z: Thickness direction

Claims

1. a first lead having a first main surface facing one side in a thickness direction and a first back surface facing the other side; a second lead having a second main surface facing one side in the thickness direction and a second back surface facing the other side, and spaced apart from the first lead on one side in a first direction perpendicular to the thickness direction; a first semiconductor element disposed on the first main surface and a second semiconductor element disposed on the second main surface; a sealing resin that covers a portion of the first lead, a portion of the second lead, the first semiconductor element, and the second semiconductor element, the first semiconductor element and the second semiconductor element each have a first element side surface facing one side in the first direction and a second element side surface facing the other side, the first lead includes a first main portion located on the other side in the first direction with respect to a central cross section in the first direction of the sealing resin equidistant from the first element side surface of the first semiconductor element and the second element side surface of the second semiconductor element in the first direction, and a first extending portion extending from the first main portion to one side in the first direction, the second lead includes a second main portion located on one side in the first direction with respect to the central cross section in the first direction, and a second extending portion extending from the second main portion to the other side in the first direction, the first extension portion has a first tip surface facing one side in the first direction, the first tip surface overlaps with the central cross section in the first direction or is located on one side in the first direction of the central cross section in the first direction; the second extending portion has a second tip surface facing the other side in the first direction, the second tip surface overlaps with the central cross section in the first direction or is located on the other side in the first direction relative to the central cross section in the first direction, the first extension portion and the second extension portion are disposed at positions different from each other in a second direction perpendicular to both the thickness direction and the first direction, the first extension portion is spaced apart from the second main portion in the first direction and overlaps the second main portion when viewed in the first direction; The second extension portion is spaced apart from the first main portion in the first direction and overlaps the first main portion when viewed in the first direction.

2. the first main portion has a first inner surface facing one side in the first direction, The semiconductor device according to claim 1 , wherein the first extension portion extends from the first inner surface to one side in the first direction.

3. the second main portion has a second inner surface facing the other side in the first direction, The semiconductor device according to claim 2 , wherein the second extending portion extends from the second inner surface to the other side in the first direction.

4. 4. The semiconductor device according to claim 3, wherein the first extension portion and the second extension portion are located on one side and the other side of a second direction perpendicular to both the thickness direction and the first direction when viewed in the first direction.

5. the first extension portion has a first intermediate surface facing one side in the first direction and positioned between the first tip surface and the first inner surface in the first direction, 5 . The semiconductor device according to claim 4 , wherein the second extending portion has a second intermediate surface facing the other side in the first direction and positioned between the second tip surface and the second inner surface in the first direction.

6. the first intermediate surface is located on the other side of the first tip surface in the second direction, The semiconductor device according to claim 5 , wherein the second intermediate surface is located on one side of the second tip surface in the second direction.

7. 7. The semiconductor device according to claim 4, wherein said first main surface and said second main surface are at the same position in said thickness direction.

8. The semiconductor device according to claim 1 , wherein the first rear surface and the second rear surface are exposed from the sealing resin.

9. 9. The semiconductor device according to claim 8, wherein said first main portion and said second main portion are arranged symmetrically across said central cross section in said first direction when viewed in said thickness direction.

10. the first lead has a first concave surface facing the other side in the thickness direction and covered with the sealing resin; the first main portion includes a portion of the first main surface, a portion of the first concave surface, and at least a portion of the first back surface; The semiconductor device according to claim 9 , wherein said first extension portion includes a part of said first main surface and a part of said first concave surface.

11. the second lead has a second concave surface facing the other side in the thickness direction and covered with the sealing resin; the second main portion includes a portion of the second main surface, a portion of the second concave surface, and at least a portion of the first back surface, The semiconductor device according to claim 10 , wherein the second extension portion includes a part of the second main surface and a part of the second concave surface.

12. 12. The semiconductor device according to claim 9, wherein the first semiconductor element and the second semiconductor element are formed of the same type of element.

13. The semiconductor device according to claim 12 , wherein the first semiconductor element and the second semiconductor element are each a Zener diode.

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