magnetic devices

Abstract

Provided is a magnetic device capable of operating stably. The magnetic device according to an embodiment of the present invention includes a first element part. The first element part includes a first magnetic layer, a first non-magnetic member, a first magnetic member, and a first intermediate layer. The first non-magnetic layer has electrical conductivity. The direction from the first magnetic layer to the first non-magnetic member is along a first direction. The first magnetic member is provided between the first magnetic layer and the first non-magnetic member and is in contact with the first non-magnetic member. The first intermediate layer is provided between the first magnetic layer and the first magnetic member and has no magnetism. The first non-magnetic member includes at least one of a first material and a second material. The first material includes a first element and a second element including oxygen or nitrogen. The first element includes Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, Zn, Mg, or Al. The second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al.

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to magnetic devices. [Background technology]

[0002] Magnetic devices including magnetic layers are used in a variety of applications, and stable operation is desired for the magnetic devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6545853 Summary of the Invention [Problem to be solved by the invention]

[0004] Embodiments of the present invention provide a magnetic device capable of stable operation. [Means for solving the problem]

[0005] The magnetic device according to the embodiment includes a first element unit. The first element unit includes a first magnetic layer, a first non-magnetic member, a first magnetic member, and a first intermediate layer. Materialsis conductive. The direction from the first magnetic layer to the first non-magnetic member is along a first direction. The first magnetic member is provided between the first magnetic layer and the first non-magnetic member and is in contact with the first non-magnetic member. The first intermediate layer is provided between the first magnetic layer and the first magnetic member and is non-magnetic. The first non-magnetic member includes at least one of a first material and a second material. The first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen. The first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The second element includes at least one selected from the group consisting of Mg and Al. The second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. [Figure 2] FIG. 2 is a schematic perspective view illustrating the magnetic device according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. [Figure 4] 4A and 4B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. [Figure 5] 5A and 5B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. [Figure 6] 6A and 6B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. [Figure 7] 7A and 7B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view illustrating the magnetic device according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. FIG. 2 is a schematic perspective view illustrating the magnetic device according to the first embodiment. The magnetic device 110 according to the embodiment includes a first element unit 10 E. The first element unit 10 E includes a first magnetic layer 11, a first non-magnetic member 31, a first magnetic member 21, and a first intermediate layer 15.

[0009] The first non-magnetic member 31 is conductive. The direction from the first magnetic layer 11 to the first non-magnetic member 31 is along the first direction D1.

[0010] The first direction D1 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0011] The first magnetic member 21 is provided between the first magnetic layer 11 and the first non-magnetic member 31. The first magnetic member 21 is in contact with the first non-magnetic member 31. The first intermediate layer 15 is provided between the first magnetic layer 11 and the first magnetic member 21. The first intermediate layer 15 is non-magnetic. For example, the first intermediate layer 15 may be in contact with the first magnetic layer 11 and the first magnetic member 21.

[0012] The first non-magnetic member 31 includes at least one of a first material and a second material. The first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen. The first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The second element includes at least one selected from the group consisting of Mg and Al. The second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al. For example, the first non-magnetic member 31 includes Ru and oxygen. For example, the first non-magnetic member 31 includes Al and Pt. This ensures stable operation, as described below. Examples of the first material and the second material will be described later.

[0013] In the embodiment, the first intermediate layer 15 includes, for example, at least one selected from the group consisting of MgO, CaO, SrO, TiO, VO, NbO, and Al2O3. The first element unit 10E is, for example, a TMR (Tunnel Magneto Resistance) element.

[0014] The first magnetic layer 11 is, for example, a magnetization free layer. The first magnetic member 21 is, for example, a magnetization reference layer. The magnetization of the first magnetic member 21 is less likely to change than the magnetization of the first magnetic layer 11.

[0015] The first magnetic layer 11 includes at least one selected from the group consisting of Fe, Co, and Ni. The first magnetic layer 11 may further include boron. The first magnetic layer 11 is, for example, a ferromagnetic layer.

[0016] As shown in FIG. 1, in one example, the first magnetic member 21 includes a plurality of first magnetic films 21m and a plurality of first non-magnetic films 21n. In the first direction D1, one of the plurality of first non-magnetic films 21n is located between one of the plurality of first magnetic films 21m and another of the plurality of first non-magnetic films 21m. One of the plurality of first magnetic films 21m is located between one of the plurality of first non-magnetic films 21n and another of the plurality of first non-magnetic films 21n. For example, the first magnetic films 21m and the first non-magnetic films 21n are arranged alternately. The first magnetic film 21m contacts the first non-magnetic film 21n.

[0017] For example, the first magnetic member 21 may be a synthetic anti-ferromagnetic (SAF) layer. One of the plurality of first magnetic films 21m may be antiferromagnetically coupled to another of the plurality of first magnetic films 21m. For example, the SAF structure stabilizes the magnetization of the plurality of first magnetic films 21m. The magnetization of the first magnetic member 21 is stabilized.

[0018] For example, the first magnetic member 21 may satisfy the following first or second condition: In the first condition, one of the plurality of first non-magnetic films 21n contains Ru, and the thickness t21n of one of the plurality of first non-magnetic films 21n along the first direction D1 is not less than 0.2 nm and not more than 2 nm.

[0019] In the second condition, one of the plurality of first non-magnetic films 21n contains Ir. The thickness t21n of one of the plurality of first non-magnetic films 21n along the first direction D1 is not less than 0.2 nm and not more than 2 nm.

[0020] Such first or second condition makes it easy to obtain antiferromagnetic coupling. Meanwhile, the plurality of first magnetic films 21m includes at least one selected from the group consisting of Fe, Co, and Ni. The plurality of first magnetic films 21m may further include boron. The thickness t21m of the plurality of first magnetic films 21m along the first direction D1 may be, for example, not less than 0.2 nm and not more than 5 nm.

[0021] As already described, in one example, the first magnetic member 21 functions as a magnetization reference layer. In a reference example, an antiferromagnetic member (e.g., IrMn or PtMn) is provided on the first magnetic member 21. This allows the magnetization of the first magnetic member 21 to be fixed in a desired direction. In this reference example, it has been found that as the size of the magnetic element (e.g., the first element unit 10E) decreases, the magnetization of the first magnetic member 21 tends to become unstable. For example, as the size of the magnetic element (e.g., the first element unit 10E) decreases, the size of the magnetic element approaches the size of the crystal grains contained in the antiferromagnetic member. This causes the state of the crystal grains contained in the antiferromagnetic member in the magnetic element to become non-uniform. As a result, it is believed that the magnetization of the first magnetic member 21 becomes unstable.

[0022] In contrast, in the embodiment, the first non-magnetic member 31 is provided instead of the antiferromagnetic member. The first non-magnetic member 31 includes the first material or the second material. The first material includes a first element and a second element. For example, it is considered that the volume of the first non-magnetic member 31 changes when a second element (oxygen and / or nitrogen) is introduced into a member including the first element. This causes stress to be generated in the first non-magnetic member 31. The second material includes a third element and a fourth element (Al). For example, it is considered that the volume of the first non-magnetic member 31 changes when a third element (Pt, Cu, and / or Hf) is introduced into a member including the fourth element (Al). This causes stress to be generated in the first non-magnetic member 31. It is considered that the stress is applied to the first magnetic member 21, and the magnetization direction of the first magnetic member 21 is controlled.

[0023] The above-mentioned problem of crystal grains in antiferromagnetic members does not occur in the first non-magnetic member 31. Even if the size of the magnetic element (for example, the first element portion 10E) is reduced, the magnetization of the first magnetic member 21 is stably controlled.

[0024] Stabilizing the magnetization of the first magnetic member 21 stabilizes the characteristics of the magnetic element. For example, the stability of the characteristics of the first magnetic member 21 is improved. For example, a large resistance change rate is obtained. For example, a large read signal is obtained. For example, stress is applied to the first magnetic layer 11. For example, good retention is obtained. Stable characteristics can be maintained even when the size of the first element unit 10E is reduced. According to the embodiment, a magnetic device capable of stable operation can be provided.

[0025] In the embodiment, for example, the first non-magnetic member 31 can apply stress to the first magnetic member 21. The stress may be, for example, one of tensile stress and compressive stress. The stress may have a component in a direction intersecting the first direction D1 (a direction along the XY plane).

[0026] As described above, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen. The first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. For example, when oxygen is introduced into a film of the first element, the volume of the film increases. The increase in volume is thought to be due to, for example, a difference between the structure (e.g., crystalline structure) of the film of the first element and the structure (e.g., crystalline structure) of the film containing the first element and oxygen.

[0027] The effect of increasing volume is large for Ru, Ta, Mo, or W. The effect of increasing volume is medium for Hf, Cr, Cu, and Pd. The effect of increasing volume is relatively small for V, Ti, or Zn.

[0028] The second element includes at least one selected from the group consisting of Mg and Al. For example, when oxygen is introduced into a film of the second element, the volume of the film decreases. The decrease in volume is thought to be caused by, for example, a difference between the structure (e.g., crystalline structure) of the film of the second element and the structure (e.g., crystalline structure) of the film containing the second element and oxygen.

[0029] Among the various elements described above, Hf, Al, and Mg are less likely to mix with the layer containing Co, Fe, etc., contained in the first magnetic member 21. When the first non-magnetic member 31 contains Hf, Al, or Mg, stress can be applied to the first magnetic member 21 while suppressing adverse effects on the characteristics of the first magnetic member 21.

[0030] As described above, when the first non-magnetic member 31 contains the first material or the second material, stress is generated between the first non-magnetic member 31 and the first magnetic member 21. This stress may have anisotropy in the XY plane. The anisotropy may be induced by various configurations.

[0031] For example, as shown in Figures 1 and 2, the magnetic device 110 may further include a first conductive member 51. The first conductive member 51 includes a first conductive portion 51a, a second conductive portion 51b, and a third conductive portion 51c. The third conductive portion 51c is provided between the first conductive portion 51a and the second conductive portion 51b. First conductive portion 51a from A second direction D2 toward the second conductive portion 51b intersects with the first direction D1. The second direction D2 is, for example, the X-axis direction.

[0032] As shown in FIG. 2, the first conductive portion 51a and the second conductive portion 51b are present on both sides of the position of the first element unit 10E in the X-axis direction. On the other hand, the first conductive member 51 is not present on both sides of the position of the first element unit 10E in the Y-axis direction. In this way, anisotropy exists in the XY plane. This may induce anisotropy in the stress. For example, the magnetization of the first magnetic member 21 may be controlled by the stress anisotropy.

[0033] In another example, as described below, an insulating member may be provided around the first element portion 10E, and the configuration of the insulating member may vary within the XY plane. This may induce anisotropy in the stress. For example, the magnetization of the first magnetic member 21 may be controlled by the stress anisotropy.

[0034] In yet another example, anisotropy may be provided in the shape of at least one of the first non-magnetic member 31 and the first magnetic member 21. This may induce anisotropy in stress. For example, the magnetization of the first magnetic member 21 may be controlled by the stress anisotropy.

[0035] 2, the length 31y of the first non-magnetic member 31 along the third direction may be different from the length 31x of the first non-magnetic member 31 along the second direction D2. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction.

[0036] In one example, the length 31y is longer than the length 31x, which causes the stress generated in the first non-magnetic member 31 to have in-plane anisotropy.

[0037] 2, the length 21y of the first magnetic member 21 along the third direction D3 may be different from the length 21x of the first magnetic member 21 along the second direction D2. For example, the length 21y is longer than the length 21x. This causes in-plane anisotropy in the stress applied to the first magnetic member 21.

[0038] Due to the in-plane anisotropy of the stress applied to the first magnetic member 21, the lattice length of the first magnetic member 21 may have in-plane anisotropy.

[0039] For example, the third direction lattice length along the third direction D3 of at least a part of the first magnetic member 21 may be different from the second direction lattice length along the second direction D2 of at least a part of the first magnetic member 21. For example, the third direction lattice length is longer than the second direction lattice length.

[0040] When the lattice length in the third direction is longer than the lattice length in the second direction, the first magnetic member 21 is pulled in the third direction D3 and compressed in the second direction D2.

[0041] When the lattice length in the third direction is shorter than the lattice length in the second direction, the first magnetic member 21 is pulled in the second direction D2 and compressed in the third direction D3.

[0042] When the magnetostriction constant of the first magnetic member 21 is positive, the magnetization of the first magnetic member 21 is along the direction in which it is pulled. When the magnetostriction constant of the first magnetic member 21 is negative, the magnetization of the first magnetic member 21 is along the direction in which it is compressed.

[0043] In the embodiment, for example, stress is applied to the first magnetic member 21 by the first non-magnetic member 31. As described above, anisotropy of the stress may be generated by at least one of the shape of the first conductive member 51, the configuration of the insulating member provided around the first element unit 10E, the shape of the first non-magnetic member 31, and the shape of the first magnetic member 21. The generation of anisotropic stress in the first magnetic member 21 allows stable control of the magnetization of the first magnetic member 21. Various examples of how anisotropy is induced in the stress will be described later.

[0044] Due to the influence of the first non-magnetic member 31, stress is introduced to the first magnetic member 21. The stress may vary along the Z-axis direction depending on the distance from the first non-magnetic member 31. The lattice length may vary along with the stress. For example, the lattice length of the first magnetic member 21 may vary along the Z-axis direction. The stress applied from the first non-magnetic member 31 may decrease as the distance from the first non-magnetic member 31 increases.

[0045] As shown in FIG. 1, for example, the first magnetic member 21 includes a first position 21a and a second position 21b. The second position 21b is located between the first position 21a and the first non-magnetic member 31. The first position lattice length along the intersecting direction intersecting with the first direction D1 at the first position 21a is different from the second position lattice length along the intersecting direction at the second position 21b. The intersecting direction is, for example, any direction along the XY plane (e.g., the Y-axis direction). The first position 21a is far from the first non-magnetic member 31. The second position 21b is close to the first non-magnetic member 31.

[0046] For example, when the first magnetic member 21 is subjected to a tensile stress, the second position lattice length is longer than the first position lattice length.

[0047] For example, when the first magnetic member 21 is subjected to compressive stress, the second position grid length is shorter than the first position grid length.

[0048] As described above, the first material includes a first element (one of a first element and a second element, for example, Ru) and a second element (at least one selected from the group consisting of oxygen and nitrogen). For example, when the second element is introduced into a member containing the first element, the volume of the member changes (for example, increases or decreases). It is preferable that the second element is introduced uniformly in the thickness direction of the first non-magnetic member 31. This makes it easier for a large stress to be applied from the first non-magnetic member 31 to the first magnetic member 21.

[0049] As shown in FIG. 1, the first non-magnetic member 31 includes a first non-magnetic portion 31a and a second non-magnetic portion 31b. The first non-magnetic portion 31a includes a first surface 31f. The second non-magnetic portion 31b includes a second surface 31g. The first surface 31f faces the first magnetic member 21, for example. The first surface 31f contacts the first magnetic member 21, for example. The first surface 31f is located between the first magnetic member 21 and the second surface 31g in the first direction D1. The first non-magnetic portion 31a is a deep portion. The second non-magnetic portion 31b is a shallow portion.

[0050] The difference between the concentration of the second element (first concentration) in the first non-magnetic portion 31a and the concentration of the second element (second concentration) in the second non-magnetic portion 31b is small, for example, a first ratio of the absolute value of the difference between the first concentration and the second concentration to the first concentration is 0.2 or less.

[0051] For example, the second element (oxygen and / or nitrogen) is introduced without a large difference in concentration between the first non-magnetic portion 31a (deep portion) and the second non-magnetic portion 31b (shallow portion), thereby obtaining a large and stable stress.

[0052] In the embodiment, a portion of the first magnetic member 21 may contain the second element. For example, the concentration of the second element in the first magnetic member 21 may decrease with increasing distance from the first non-magnetic member 31. As already described, the first magnetic member 21 includes a first position 21a and a second position 21b. The second position 21b is located between the first position 21a and the first non-magnetic member 31. The concentration of the second element in the second position 21b is higher than the concentration of the second element in the first position 21a. Alternatively, the first position 21a does not contain oxygen.

[0053] In one example of forming the first non-magnetic member 31, after forming a film containing a first element, the film may be treated with a gas containing a second element. For example, if the first element is Ru and the second element is oxygen, a set of forming a 1-nm-thick Ru film and treating it with oxygen may be repeated multiple times. Treating the 1-nm-thick Ru film with oxygen incorporates oxygen into the Ru film. By repeating this set multiple times, oxygen is introduced into each of the multiple Ru films at a stable, high concentration. By repeating the above set 10 times, a first non-magnetic member 31 with a thickness of approximately 10 nm is obtained. For example, a low first ratio is easily obtained. Heat treatment may also be performed as appropriate.

[0054] As described above, the first non-magnetic member 31 may contain the second material. In this case, the difference between the concentration of the third element in the first non-magnetic portion 31a and the concentration of the third element in the second non-magnetic portion 31b is small. For example, a first ratio of the absolute value of the difference between these concentrations to the concentration of the third element in the first non-magnetic portion 31a is 0.2 or less.

[0055] The difference between the concentration of the third element in the first non-magnetic portion 31a and the concentration of the fourth element in the second non-magnetic portion 31b is small, for example, a first ratio of the absolute value of the difference between these concentrations to the concentration of the fourth element in the first non-magnetic portion 31a is 0.2 or less.

[0056] In the first non-magnetic member 31, for example, a film containing a third element (at least one selected from the group consisting of Pt, Cu, and Hf) and a film containing a fourth element (Al) may be alternately provided, and heat treatment may be performed.

[0057] When the first non-magnetic member 31 contains Al and Pt, at least one of Pt2Al3 and PtAl2 may be formed by heat treatment at a temperature of 300° C. to 550° C. The first non-magnetic member 31 may contain, for example, an intermetallic compound. The formation of the intermetallic compound generates stress.

[0058] When the first non-magnetic member 31 contains Al and Cu, a phase transition may occur by heat treatment at a temperature of 200° C. to 400° C. For example, Al-4Cu may be formed.

[0059] When the first non-magnetic member 31 contains Al and Hf, HfAl3 is formed by heat treatment at a temperature of 350° C. to 650° C. For example, a phase transition from the α phase to the β phase occurs.

[0060] As described above, stress is also generated when the second material described above is applied to the first non-magnetic member 31. For example, after the film that will become the first non-magnetic member 31 is formed, a heat treatment at 200°C or higher and 650°C or lower is performed. The heat treatment temperature may be, for example, 300°C or higher and 400°C or lower. This condition provides good compatibility with, for example, memory manufacturing processes. The heat treatment after the film formation described above generates stress. The stress is thought to be related to, for example, interdiffusion of elements, changes in crystal structure, and / or changes in lattice constant due to the heat treatment.

[0061] When films containing a third element and films containing a fourth element are alternately stacked on the first magnetic member 21, the film containing the third element may be in contact with the first magnetic member 21. The fourth element (Al) is relatively more likely to move (diffuse) than the third element. By having the film containing the third element in contact with the first magnetic member 21, the movement of the fourth element can be suppressed.

[0062] Even when the second material as described above is used for the first non-magnetic member 31, the configuration described for the first material may be provided.

[0063] In the embodiment, the thickness t31 (see FIG. 1) of the first non-magnetic member 31 along the first direction D1 is, for example, 1 nm or more and 50 nm or less. When the thickness t31 is 1 nm or more, for example, a stable stress can be easily obtained, and the magnetization of the first magnetic member 21 can be stably controlled. When the thickness t31 is 50 nm or less, for example, the processing of the element becomes easy, and it is easy to obtain a fine element.

[0064] In the embodiment, the thickness t11 (see FIG. 1) of the first magnetic layer 11 along the first direction D1 may be, for example, 0.5 nm or more and 10 nm or less, and the thickness t15 (see FIG. 1) of the first intermediate layer 15 along the first direction D1 may be, for example, 0.3 nm or more and 3 nm or less.

[0065] As already described, the magnetic device 110 may further include a first conductive member 51. At least a portion of the first conductive member 51 may be in contact with the first magnetic layer 11. The first conductive member 51 includes, for example, at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0066] For example, a current flowing through the first conductive member 51 acts on the first magnetic layer 11. This makes it possible to control the magnetization of the first magnetic layer 11 (magnetization free layer). For example, the magnetization of the first magnetic layer 11 is controlled by spin-orbit torque.

[0067] 2, the magnetic device 110 may include a control unit 70. The control unit 70 is electrically connected to the first conductive member 51 and the first non-magnetic member 31, for example.

[0068] As already explained (see FIG. 2), the first conductive member 51 includes a first conductive portion 51a, a second conductive portion 51b, and a third conductive portion 51c. The third conductive portion 51c is provided between the first conductive portion 51a and the second conductive portion 51b. The boundary between these portions may be unclear.

[0069] The first magnetic layer 11 is located between the third conductive portion 51c and the first non-magnetic member 31 in the first direction D1. The first magnetic layer 11 overlaps with the third conductive portion 51c in the first direction D1. The first magnetic layer 11 does not overlap with the first conductive portion 51a and the second conductive portion 51b in the first direction D1.

[0070] The control unit 70 is capable of supplying a first current i1 between the first conductive portion 51 a and the second conductive portion 51 b. The first current i1 may flow from the first conductive portion 51 a to the second conductive portion 51 b or from the second conductive portion 51 b to the first conductive portion 51 a. The control unit 70 is capable of applying a voltage Va1 between the first conductive member 51 and the first non-magnetic member 31.

[0071] The electrical resistance between the first conductive member 51 and the first non-magnetic member 31 can be changed (controlled) by the direction of the first current i1 and the voltage Va1 between the first conductive member 51 and the first non-magnetic member 31. For example, when the voltage Va1 is either negative or positive, the magnetization of the first magnetic layer 11 is likely to change in response to the first current i1. For example, when the voltage Va1 is the other of negative and positive, the magnetization of the first magnetic layer 11 is unlikely to change even when the first current i1 is supplied. With this configuration, the magnetization of the first magnetic layer 11 can be stably controlled. The electrical resistance can be stably controlled.

[0072] FIG. 3 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. 3, the magnetic device 111 according to the embodiment includes a first element portion 10E. The first element portion 10E includes a first intermediate member 35. The configuration of the magnetic device 111 other than this may be similar to the configuration of the magnetic device 110.

[0073] For example, in the magnetic device 111, the first element unit 10E includes a first magnetic layer 11, a first non-magnetic member 31, a first magnetic member 21, a first intermediate layer 15, and a first intermediate member 35. The first non-magnetic member 31 is conductive. The direction from the first magnetic layer 11 to the first non-magnetic member 31 is along the first direction D1. The first magnetic member 21 is provided between the first magnetic layer 11 and the first non-magnetic member 31. The first intermediate layer 15 is provided between the first magnetic layer 11 and the first magnetic member 21, and is nonmagnetic. The first intermediate member 35 is provided between the first magnetic member 21 and the first non-magnetic member 31, and is in contact with the first magnetic member 21 and the first non-magnetic member 31.

[0074] The first non-magnetic member 31 includes at least one of a first material and a second material. The first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen. The first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The second element includes at least one selected from the group consisting of Mg and Al. The second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al.

[0075] The first intermediate member 35 includes at least one of a first intermediate material, a second intermediate material, and a third intermediate material. The first intermediate material includes oxygen and a fifth element including at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru. The second intermediate material includes nitrogen and a sixth element including at least one selected from the group consisting of B, Si, Ga, and Ti. The third intermediate material includes at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf.

[0076] The first intermediate member 35 includes, for example, at least one selected from the group consisting of MgO, Al2O3, TaO, MoO3, NbO, HfO, RuO2, and Ta2O5. Thus, the first intermediate member 35 may include an oxide. In this case, the thickness t35 (see FIG. 3) of the first intermediate member 35 is, for example, 0.5 nm or less.

[0077] The first intermediate member 35 includes, for example, at least one selected from the group consisting of BN, SiN, GaN, and TiN. Thus, the first intermediate member 35 may include a nitride. In this case, the thickness t35 of the first intermediate member 35 is, for example, 1 nm or less.

[0078] The first intermediate member 35 may include, for example, at least one selected from the group consisting of a W region, a Re region, an Os region, a Ta region, a Mo region, an Ir region, a Ru region, and a Hf region. These elements have high melting points. These materials are difficult to mix with elements such as Co or Fe provided in the first magnetic member 21. For example, the third intermediate material is a non-solid-soluble metal with respect to Co or Fe.

[0079] The provision of the first intermediate member 35 can prevent elements contained in the first non-magnetic member 31 (elements contained in the first material or the second material) from migrating to the first magnetic member 21. The first intermediate member 35 is, for example, a diffusion suppression layer.

[0080] By providing the first intermediate member 35, for example, the first magnetic member 21 is stabilized, and stable characteristics are easily obtained.

[0081] When films containing the third element and films containing the fourth element are alternately stacked in the first intermediate member 35, the film containing the third element may be in contact with the first intermediate member 35. The fourth element (Al) is relatively more likely to move (diffuse) than the third element. By having the film containing the third element in contact with the first intermediate member 35, the movement of the fourth element can be further suppressed.

[0082] Below, several examples will be described in which anisotropy of stress is introduced by an insulating member provided around the first element portion 10E.

[0083] 4A and 4B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. 4(a) and 4(b), the magnetic device 120 according to the embodiment includes a first element portion 10E, a first insulating member 41, and a second insulating member 42. The remaining configuration of the magnetic device 120 may be similar to that of the magnetic device 110. In this example, the magnetic device 120 includes a first opposing insulating member 41A and a second opposing insulating member 42A.

[0084] The direction from the first insulating member 41 to the first element unit 10E is along the second direction D2. The first element unit 10E is located between the first insulating member 41 and the first opposing insulating member 41A in the second direction D2. For example, the first insulating member 41 contacts the first conductive portion 51a. For example, the first opposing insulating member 41A contacts the second conductive portion 51b. The first insulating member 41 contacts at least a portion of the first element unit 10E. The first opposing insulating member 41A contacts at least a portion of the first element unit 10E.

[0085] As shown in FIG. 4(b), the direction from the second insulating member 42 to the first element unit 10E is along the third direction D3. The first element unit 10E is located between the second insulating member 42 and the second opposing insulating member 42A in the third direction D3. In this example, the second insulating member 42 contacts at least a portion of the first element unit 10E. The second opposing insulating member 42A contacts at least a portion of the first element unit 10E.

[0086] The material of the second insulating member 42 is different from the material contained in the first insulating member 41. This induces anisotropy in the stress. For example, anisotropic stress is applied to the first magnetic member 21. For example, the material of the second opposing insulating member 42A is different from the material contained in the first opposing insulating member 41A. This induces anisotropic stress in the first magnetic member 21.

[0087] The Young's modulus of the material of the second insulating member 42 is different from the Young's modulus of the material contained in the first insulating member 41 .

[0088] For example, the Young's modulus of the material of the second insulating member 42 is lower than the Young's modulus of the material included in the first insulating member 41. In this case, the magnetostriction constant of the first magnetic member 21 may be positive. For example, the lattice length of the first magnetic member 21 along the third direction D3 is longer than the lattice length of the first magnetic member 21 along the second direction D2.

[0089] In another example, the Young's modulus of the material of the second insulating member 42 is higher than the Young's modulus of the material included in the first insulating member 41. In this case, the magnetostriction constant of the first magnetic member 21 may be negative. For example, the lattice length of the first magnetic member 21 along the third direction D3 is shorter than the lattice length of the first magnetic member 21 along the second direction D2.

[0090] The first insulating member 41 contains, for example, at least one selected from the group consisting of oxygen and nitrogen, and at least one selected from the group consisting of silicon and aluminum. The second insulating member 42 contains, for example, carbon. The second insulating member 42 may contain, for example, carbon, at least one selected from the group consisting of oxygen and nitrogen, and at least one selected from the group consisting of silicon and aluminum. The first insulating member 41 does not contain, for example, substantially any carbon. Alternatively, the concentration of carbon contained in the first insulating member 41 is lower than the concentration of carbon contained in the second insulating member 42.

[0091] The material of the first opposing insulating member 41A may be the same as the material of the first insulating member 41. The material of the second opposing insulating member 42A may be the same as the material of the second insulating member .

[0092] 5A and 5B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. 5(a) and 5(b), the magnetic device 121 according to the embodiment includes, in addition to the first element portion 10E, a first insulating member 41 and a second insulating member 42. Except for this, the configuration of the magnetic device 121 may be similar to the configuration of the magnetic device 111.

[0093] In the magnetic device 121, the direction from the first insulating member 41 to the first element unit 10E is along the second direction D2. The first insulating member 41 contacts at least a portion of the first element unit 10E. The direction from the second insulating member 42 to the first element unit 10E is along the third direction D3.

[0094] In the magnetic device 121, a gap 42g is provided between the second insulating member 42 and the first element portion 10E. Such first insulating member 41 and second insulating member 42 (gap 42g) induce anisotropy in the stress. For example, anisotropic stress is applied to the first magnetic member 21.

[0095] For example, in the second direction D2, the first element unit 10E may be provided between the first insulating member 41 and the first opposing insulating member 41A. The first opposing insulating member 41A is in contact with the first element unit 10E. In the third direction D3, the first element unit 10E may be provided between the second insulating member 42 and the second opposing insulating member 42A. A gap 42Ag is provided between the first element unit 10E and the second opposing insulating member 42A. Anisotropy is induced in the stress. For example, anisotropic stress is applied to the first magnetic member 21.

[0096] In the magnetic device 121, for example, the magnetostriction constant of the first magnetic member 21 may be positive. For example, the lattice length of the first magnetic member 21 along the third direction D3 is longer than the lattice length of the first magnetic member 21 along the second direction D2.

[0097] In the embodiment, when the magnetostriction constant of the first magnetic member 21 is negative, a gap may be provided between the first insulating member 41 and the first element unit 10E. For example, the lattice length of the first magnetic member 21 along the third direction D3 is shorter than the lattice length of the first magnetic member 21 along the second direction D2.

[0098] 6A and 6B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. 6(a) and 6(b), the magnetic device 122 according to the embodiment includes a first insulating member 41 and a second insulating member 42 in addition to the first element portion 10E. The remaining configuration of the magnetic device 122 may be similar to that of the magnetic device 111. For example, the first element portion 10E includes a first intermediate member 35. The material of the second insulating member 42 is different from the material of the first insulating member 41.

[0099] 7A and 7B are schematic cross-sectional views illustrating the magnetic device according to the first embodiment. 7(a) and 7(b), the magnetic device 123 according to the embodiment includes a first insulating member 41 and a second insulating member 42 in addition to the first element unit 10E. The remaining configuration of the magnetic device 123 may be similar to that of the magnetic device 111. For example, the first element unit 10E includes a first intermediate member 35. The first insulating member 41 contacts the first element unit 10E. A gap 42g is provided between the second insulating member 42 and the first element unit 10E.

[0100] Anisotropy is induced in the stress in the magnetic device 122 and the magnetic device 123. For example, anisotropic stress is applied to the first magnetic member 21.

[0101] (Second embodiment) FIG. 8 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. 8, the magnetic device 130 according to the embodiment further includes a second non-magnetic member 32 in addition to the first element portion 10E. The remaining configuration of the magnetic device 130 may be similar to that of the magnetic device 110.

[0102] At least a part of the first conductive member 51 in the first direction D1, the second non-magnetic member 32, First magnetic layer 11and . The second non-magnetic member 32 may be in contact with the first conductive member 51. The second non-magnetic member 32 includes at least one of a third material and a fourth material. The third material includes one of a third element and a fourth element, and at least one selected from the group consisting of oxygen and nitrogen. The third element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn. The fourth element includes at least one selected from the group consisting of Mg and Al. The fourth material includes at least one selected from the group consisting of Pt, Cu, and Hf, and Al.

[0103] The second non-magnetic member 32 may, for example, apply stress to the first conductive member 51 and the first element portion 10E. The second non-magnetic member 32 may be conductive or non-conductive. The second non-magnetic member 32 can provide a magnetic device that can operate more stably. The second non-magnetic member 32 may be applied to any of the magnetic devices described in relation to the first embodiment.

[0104] (Third embodiment) FIG. 9 is a schematic cross-sectional view illustrating the magnetic device according to the third embodiment. 9, a magnetic device 140 according to the embodiment includes a plurality of first element units 10E. The magnetic device 140 can be used, for example, as a memory circuit. The magnetic device 120 can be used, for example, as a logic circuit. The number of the plurality of first element units 10E is arbitrary.

[0105] For example, the first conductive member 51 may further include a fourth conductive portion 51d and a fifth conductive portion 51e. The second conductive portion 51b is located between the first conductive portion 51a and the fourth conductive portion 51d. The fifth conductive portion 51e is located between the second conductive portion 51b and the fourth conductive portion 51d. but One of the plurality of first element portions 10E is provided in the third conductive portion 51c, and another of the plurality of first element portions 10E is provided in the fifth conductive portion 51e.

[0106] The configuration of the magnetic device 140 may be applied to any magnetic device according to the first or second embodiment.

[0107] Embodiments may include the following features. (Configuration 1) a first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member and in contact with the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first element portion including the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, The magnetic device, wherein the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al.

[0108] (Configuration 2) a first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first intermediate member provided between the first magnetic member and the first non-magnetic member and in contact with the first magnetic member and the first non-magnetic member; a first element portion including the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al; the first intermediate member includes at least one of a first intermediate material, a second intermediate material, and a third intermediate material; the first intermediate material includes a fifth element including at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru, and oxygen; the second intermediate material includes a sixth element including at least one selected from the group consisting of B, Si, Ga, and Ti, and nitrogen; A magnetic device, wherein the third intermediate material includes at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf.

[0109] (Configuration 3) Further comprising a first conductive member; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in a second direction intersecting the first direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; 3. The magnetic device of claim 1, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0110] (Configuration 4) Further comprising a first insulating member and a second insulating member, a direction from the first insulating member to the first element portion is along the second direction; the first insulating member is in contact with at least a portion of the first element portion, The direction from the second insulating member to the first element portion includes the first direction and the second direction. Intersects with a plane Along the third direction, the second insulating member is in contact with at least a portion of the first element portion, 4. The magnetic device of claim 3, wherein the material of the second insulating member is different from the material contained in the first insulating member.

[0111] (Configuration 5) 5. The magnetic device of claim 4, wherein the Young's modulus of the material of the second insulating member is different from the Young's modulus of the material included in the first insulating member.

[0112] (Configuration 6) Further comprising a first insulating member and a second insulating member, a direction from the first insulating member to the first element portion is along the second direction; the first insulating member is in contact with at least a portion of the first element portion, The direction from the second insulating member to the first element portion includes the first direction and the second direction. Intersects with a plane Along the third direction, 4. The magnetic device according to configuration 3, wherein a gap is provided between the second insulating member and the first element portion.

[0113] (Configuration 7) the first magnetic member has a positive magnetostriction constant; before 6. The magnetic device of claim 5, wherein the Young's modulus of the material of the second insulating member is lower than the Young's modulus of the material included in the first insulating member.

[0114] (Configuration 8) The magnetostriction constant of the first magnetic member is negative The configuration is 5 The magnetic device according to claim 1.

[0115] (Configuration 9) the length of the first non-magnetic member along the third direction is longer than the length of the first non-magnetic member along the second direction; the second direction intersects with the first direction, 3. The magnetic device of claim 1, wherein the third direction intersects with a plane including the first direction and the second direction.

[0116] (Configuration 10) Further comprising a first conductive member; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in the second direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; 10. The magnetic device of claim 9, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0117] (Configuration 11) 11. The magnetic device of claim 9 or 10, wherein the magnetostriction constant of the first magnetic member is positive.

[0118] (Configuration 12) A magnetic device described in any one of configurations 4 to 11, wherein the third direction lattice length along the third direction of at least a portion of the first magnetic member is longer than the second direction lattice length along the second direction of at least a portion of the first magnetic member.

[0119] (Configuration 13) the first magnetic member includes a plurality of first magnetic films and a plurality of first non-magnetic films; A magnetic device described in any one of configurations 1 to 12, wherein in the first direction, one of the plurality of first non-magnetic films is located between one of the plurality of first magnetic films and another of the plurality of first magnetic films.

[0120] (Configuration 14) the first magnetic member satisfies a first condition or a second condition, In the first condition, the one of the plurality of first non-magnetic films contains Ru, and the thickness of the one of the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less; The magnetic device described in configuration 13, wherein, under the second condition, one of the plurality of first non-magnetic films contains Ir, and the thickness of the one of the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less.

[0121] (Configuration 15) the first non-magnetic member includes a first non-magnetic portion including a first surface and a second non-magnetic portion including a second surface; the first surface is located between the first magnetic member and the second surface in the first direction, A magnetic device described in any one of configurations 1 to 14, wherein a first ratio of the absolute value of the difference between a first concentration of the second element in the first non-magnetic portion and a second concentration of the second element in the second non-magnetic portion to the first concentration is 0.2 or less.

[0122] (Configuration 16) the first magnetic member includes a first position and a second position; the second position is located between the first position and the first non-magnetic member, 16. The magnetic device of any one of configurations 1 to 15, wherein the concentration of the second element at the second location is higher than the concentration of the second element at the first location, or the first location does not contain oxygen.

[0123] (Configuration 17) Further comprising a control unit, the control unit is capable of supplying a first current between the first conductive portion and the second conductive portion; A magnetic device described in any one of configurations 3 to 8, wherein the electrical resistance between the first conductive member and the first non-magnetic member is variable depending on the direction of the first current and the voltage between the first conductive member and the first non-magnetic member.

[0124] (Configuration 18) the first magnetic member includes a first position and a second position; the second position is located between the first position and the first non-magnetic member, A magnetic device described in any one of configurations 3 to 8, wherein a first position lattice length along an intersecting direction intersecting the first direction at the first position is different from a second position lattice length along the intersecting direction at the second position.

[0125] (Configuration 19) 19. The magnetic device of claim 18, wherein the second position lattice length is longer than the first position lattice length.

[0126] (Configuration 20) Further comprising a second non-magnetic member, At least a portion of the first conductive member in the first direction, the second non-magnetic member, the first magnetic layer Between the second non-magnetic member is in contact with the first conductive member, the second non-magnetic member includes at least one of a third material and a fourth material, the third material includes one of a third element and a fourth element, and at least one selected from the group consisting of oxygen and nitrogen; the third element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the fourth element includes at least one selected from the group consisting of Mg and Al, 9. The magnetic device according to any one of configurations 3 to 8, wherein the fourth material includes Al and at least one selected from the group consisting of Pt, Cu, and Hf.

[0127] According to the embodiment, it is possible to provide a magnetic device that can operate stably.

[0128] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the magnetic device, such as the element portion, magnetic layer, non-magnetic member, magnetic member, intermediate layer, intermediate member, conductive member, and insulating member, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0129] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0130] In addition, all magnetic devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the magnetic device described above as an embodiment of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0131] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention. [Explanation of symbols]

[0132] 10E: first element part, 11: first magnetic layer, 15: First middle class, 21: First magnetic member, 21a, 21b: 1st, 2nd position 21m: first magnetic film, 21n: first nonmagnetic film, 31, 32: first and second non-magnetic members, 31a, 31b: first and second non-magnetic parts, 31f, 31g: 1st, 2nd side, 41, 42: first and second insulating members, 41A, 42A: first and second opposing insulating members, 42g, 42Ag: gap, 51: First conductive member 51a to 51e: 1st to 5th conductive parts, 70: control unit, 110, 111, 120-122, 130, 140: Magnetic devices, D1~D3: 1st to 3rd directions, Va1: Voltage i1: 1st current T11, T15, T21M, T21N, T31, T35: Thickness

Claims

1. a first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member and in contact with the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first element portion including: a first conductive member; A first insulating member; A second insulating member; Equipped with the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in a second direction intersecting the first direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au; a direction from the first insulating member to the first element portion is along the second direction; the first insulating member is in contact with at least a portion of the first element portion, a direction from the second insulating member to the first element portion is along a third direction intersecting a plane including the first direction and the second direction; the second insulating member is in contact with at least a portion of the first element portion, A magnetic device wherein the material of the second insulating member is different from the material contained in the first insulating member.

2. a first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first intermediate member provided between the first magnetic member and the first non-magnetic member and in contact with the first magnetic member and the first non-magnetic member; a first element portion including: a first conductive member; A first insulating member; A second insulating member; Equipped with the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al; the first intermediate member includes at least one of a first intermediate material, a second intermediate material, and a third intermediate material; the first intermediate material includes a fifth element including at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru, and oxygen; the second intermediate material includes a sixth element including at least one selected from the group consisting of B, Si, Ga, and Ti, and nitrogen; the third intermediate material includes at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in a second direction intersecting the first direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au; a direction from the first insulating member to the first element portion is along the second direction; the first insulating member is in contact with at least a portion of the first element portion, a direction from the second insulating member to the first element portion is along a third direction intersecting a plane including the first direction and the second direction; the second insulating member is in contact with at least a portion of the first element portion, A magnetic device wherein the material of the second insulating member is different from the material contained in the first insulating member.

3. The magnetic device according to claim 1 , wherein the Young's modulus of the material of the second insulating member is different from the Young's modulus of the material contained in the first insulating member.

4. a first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member and in contact with the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first element portion including: a first conductive member; A first insulating member; A second insulating member; Equipped with the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in a second direction intersecting the first direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au; a direction from the first insulating member to the first element portion is along the second direction; the first insulating member is in contact with at least a portion of the first element portion, a direction from the second insulating member to the first element portion is along a third direction intersecting a plane including the first direction and the second direction; A magnetic device, wherein a gap is provided between the second insulating member and the first element portion.

5. a first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first intermediate member provided between the first magnetic member and the first non-magnetic member and in contact with the first magnetic member and the first non-magnetic member; a first element portion including: a first conductive member; A first insulating member; A second insulating member; Equipped with the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al; the first intermediate member includes at least one of a first intermediate material, a second intermediate material, and a third intermediate material; the first intermediate material includes a fifth element including at least one selected from the group consisting of Mg, Al, Ta, Mo, Nb, Hf, and Ru, and oxygen; the second intermediate material includes a sixth element including at least one selected from the group consisting of B, Si, Ga, and Ti, and nitrogen; the third intermediate material includes at least one selected from the group consisting of W, Re, Os, Ta, Mo, Ir, Ru, and Hf; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in a second direction intersecting the first direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au; a direction from the first insulating member to the first element portion is along the second direction; the first insulating member is in contact with at least a portion of the first element portion, a direction from the second insulating member to the first element portion is along a third direction intersecting a plane including the first direction and the second direction; A magnetic device, wherein a gap is provided between the second insulating member and the first element portion.

6. the first magnetic member has a positive magnetostriction constant, The magnetic device according to claim 3 , wherein the Young's modulus of the material of the second insulating member is lower than the Young's modulus of the material included in the first insulating member.

7. The magnetic device according to claim 3 , wherein the first magnetic member has a negative magnetostriction constant.

8. The magnetic device according to claim 1 , wherein the length of the first non-magnetic member along the third direction is longer than the length of the first non-magnetic member along the second direction.

9. The magnetic device according to claim 8 , wherein the first magnetic member has a positive magnetostriction constant.

10. 6. The magnetic device according to claim 1, wherein a third direction lattice length along the third direction of at least a portion of the first magnetic member is longer than a second direction lattice length along the second direction of at least a portion of the first magnetic member.

11. the first magnetic member includes a plurality of first magnetic films and a plurality of first non-magnetic films; 6. The magnetic device according to claim 1, wherein in the first direction, one of the plurality of first non-magnetic films is located between one of the plurality of first magnetic films and another of the plurality of first magnetic films.

12. the first magnetic member satisfies a first condition or a second condition, In the first condition, the one of the plurality of first non-magnetic films contains Ru, and the thickness of the one of the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less; 12. The magnetic device according to claim 11, wherein, under the second condition, the one of the plurality of first non-magnetic films contains Ir, and the thickness of the one of the plurality of first non-magnetic films along the first direction is 0.2 nm or more and 2 nm or less.

13. the first non-magnetic member includes a first non-magnetic portion including a first surface and a second non-magnetic portion including a second surface; the first surface is located between the first magnetic member and the second surface in the first direction, 6. The magnetic device according to claim 1, wherein a first ratio of an absolute value of a difference between a first concentration of the second element in the first non-magnetic portion and a second concentration of the second element in the second non-magnetic portion to the first concentration is 0.2 or less.

14. the first magnetic member includes a first position and a second position; the second position is between the first position and the first non-magnetic member, The magnetic device of claim 1 , wherein the concentration of the second element at the second location is higher than the concentration of the second element at the first location, or the first location does not contain oxygen.

15. Further comprising a control unit, the control unit is capable of supplying a first current between the first conductive portion and the second conductive portion; 6. The magnetic device according to claim 1, wherein the electrical resistance between the first conductive member and the first non-magnetic member is variable depending on the direction of the first current and the voltage between the first conductive member and the first non-magnetic member.

16. A first magnetic layer; a conductive first non-magnetic member, the direction from the first magnetic layer to the first non-magnetic member being along a first direction; a first magnetic member provided between the first magnetic layer and the first non-magnetic member and in contact with the first non-magnetic member; a non-magnetic first intermediate layer provided between the first magnetic layer and the first magnetic member; a first element portion including: a first conductive member; Equipped with the first non-magnetic member includes at least one of a first material and a second material, the first material includes a first element including one of a first element and a second element, and a second element including at least one selected from the group consisting of oxygen and nitrogen; the first element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the second element includes at least one selected from the group consisting of Mg and Al, the second material includes a third element including at least one selected from the group consisting of Pt, Cu, and Hf, and a fourth element including Al; the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion; the third conductive portion is provided between the first conductive portion and the second conductive portion in a second direction intersecting the first direction, the first magnetic layer is located between the third conductive portion and the first non-magnetic member in the first direction; the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au; the first magnetic member includes a first position and a second position; the second position is between the first position and the first non-magnetic member, A magnetic device, wherein a first position lattice length along a transverse direction that intersects the first direction at the first position is different from a second position lattice length along the transverse direction at the second position.

17. The magnetic device of claim 16 , wherein the second position lattice length is longer than the first position lattice length.

18. Further comprising a second non-magnetic member, at least a portion of the first conductive member is located between the second nonmagnetic member and the first magnetic layer in the first direction; the second non-magnetic member is in contact with the first conductive member, the second non-magnetic member includes at least one of a third material and a fourth material, the third material includes one of a third element and a fourth element, and at least one selected from the group consisting of oxygen and nitrogen; the third element includes at least one selected from the group consisting of Ru, Ta, Mo, W, Hf, Cr, Cu, Pd, V, Ti, and Zn; the fourth element includes at least one selected from the group consisting of Mg and Al, The magnetic device according to claim 1 , wherein the fourth material includes at least one selected from the group consisting of Pt, Cu, and Hf, and Al.

Images