Resin composition for semiconductor encapsulation and semiconductor device

Abstract

To provide a semiconductor sealing resin composition that excels in resin fluidity, maintains the appearance, strength and flame retardancy of molded articles, and yet can reduce wire deformation and package warping, and a semiconductor device including the semiconductor sealing resin composition.SOLUTION: A semiconductor sealing resin composition includes (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) a shrinkage rate modifier. The (E) shrinkage rate modifier is a compound represented by the general formula (1) with a maximum particle size of 105 μm or less. Relative to the total amount of the resin composition, the content of the (D) inorganic filler is 60-95 mass% and the content of the (E) shrinkage rate modifier is 0.3-3.5 mass%.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a resin composition for semiconductor encapsulation and a semiconductor device. [Background technology]

[0002] Thermosetting resin compositions have traditionally been used as encapsulants for semiconductor chips such as ICs and LSIs. Epoxy resin compositions, among others, are encapsulants that offer an excellent balance between cost effectiveness and performance. Epoxy resin compositions are increasingly being used in, for example, single-sided surface-mount encapsulation-type ball grid array (BGA) packages and land grid array (LGA) packages, which have become mainstream in recent years as electronic devices become smaller and thinner, as well as in various sensor encapsulation applications and LED reflectors. However, single-sided sealed packages and sensors have a problem in that wire deformation is more likely to occur due to the flow of the sealing resin during molding due to the recent trend toward thinner wires. High fluidity of the sealing resin is essential to reduce this wire deformation. Generally, reducing the amount of inorganic filler used to increase the fluidity of the sealing resin is a common method. However, reducing the amount of inorganic filler used to increase the fluidity of the sealing resin increases the resin shrinkage rate after molding, which can lead to warping in single-sided sealed packages, making it impossible to mount them on a board during surface mounting. In order to solve this problem, it is known to add an epoxy-modified silicone resin or liquid epoxidized polybutadiene to an epoxy resin composition (see Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-152185 [Patent Document 2] Japanese Patent Application Laid-Open No. 2012-7091 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when the amount of epoxy-modified silicone resin or liquid epoxidized polybutadiene added is increased in order to reduce molding shrinkage, there is a risk that the molded product will become unsightly and the strength and flame retardancy will be reduced. Furthermore, the reduction in both wire deformation and package warpage is not sufficiently achieved.

[0005] The present disclosure has been made in view of the above circumstances, and aims to provide a semiconductor encapsulation resin composition that has excellent resin fluidity and can reduce wire deformation and package warpage while maintaining the appearance, strength, and flame retardancy of a molded product, and a semiconductor device that uses the semiconductor encapsulation resin composition. [Means for solving the problem]

[0006] As a result of intensive research aimed at solving the above-mentioned problems, the present inventors have found that a resin composition for semiconductor encapsulation containing a predetermined amount of a shrinkage modifier having a specific structure and a maximum particle size of 105 μm or less has excellent resin flowability, and can reduce wire deformation and package warpage while maintaining the appearance, strength, and flame retardancy of the molded product.

[0007] That is, the present disclosure relates to the following: [1] A resin composition for semiconductor encapsulation, comprising (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) a shrinkage modifier, wherein the (E) shrinkage modifier is a compound represented by the following general formula (1) having a maximum particle size of 105 μm or less, and the content of the (D) inorganic filler is 60 to 95 mass % and the content of the (E) shrinkage modifier is 0.3 to 3.5 mass % relative to the total amount of the resin composition:

[0008] [ka] (In formula (1), R 1 and R 2are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. [2] A semiconductor device comprising a substrate, a semiconductor element mounted on the substrate, and a cured product of the semiconductor encapsulation resin composition according to [1] above, which encapsulates the semiconductor element. [Effects of the Invention]

[0009] According to the present disclosure, it is possible to provide a semiconductor encapsulation resin composition that has excellent resin flowability and can reduce wire deformation and package warpage while maintaining the appearance, strength, and flame retardancy of a molded product, and a semiconductor device that uses the semiconductor encapsulation resin composition. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, the present disclosure will be described in detail with reference to an embodiment.

[0011] [Semiconductor encapsulation resin composition] The resin composition for semiconductor encapsulation (hereinafter also simply referred to as resin composition) of the present disclosure contains (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) a shrinkage modifier, wherein the (E) shrinkage modifier is a compound represented by the following general formula (1) having a maximum particle size of 105 μm or less, and the content of the (D) inorganic filler is 60 to 95 mass % and the content of the (E) shrinkage modifier is 0.3 to 3.5 mass % relative to the total amount of the resin composition.

[0012] [ka]

[0013] In formula (1), R 1 and R 2 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.

[0014] [(A) Epoxy resin] The epoxy resin (A) used in the present disclosure is not particularly limited as long as it is a compound having two or more epoxy groups in one molecule, and any of a monomer, oligomer, and polymer can be used. The (A) epoxy resin is not particularly limited in terms of molecular weight or molecular structure, but examples include crystalline epoxy resins such as biphenyl-type epoxy resins, bisphenol F-type epoxy resins, and stilbene-type epoxy resins; novolac-type epoxy resins such as phenol novolac-type epoxy resins and cresol novolac-type epoxy resins; multifunctional epoxy resins such as triphenolmethane-type epoxy resins and alkyl-modified triphenolmethane-type epoxy resins; aralkyl-type epoxy resins such as phenol aralkyl-type epoxy resins having a phenylene skeleton and phenol aralkyl-type epoxy resins having a biphenylene skeleton; naphthol-type epoxy resins such as dihydroxynaphthalene-type epoxy resins and epoxy resins obtained by glycidyl etherification of dihydroxynaphthalene dimers; triazine-nucleus-containing epoxy resins such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; and bridged cyclic hydrocarbon compound-modified phenol-type epoxy resins such as dicyclopentadiene-modified phenol-type epoxy resins. (A) Epoxy resins may be used alone or in combination. The (A) epoxy resin may be a crystalline epoxy resin such as a biphenyl-type epoxy resin, a bisphenol F-type epoxy resin, or a stilbene-type epoxy resin, from the viewpoint of having a low viscosity and being able to increase the content of the (D) inorganic filler.

[0015] The (A) epoxy resin can be handled as a solid at room temperature (23°C), and may have a viscosity at 150°C of 0.005 Pa·s or more, or 0.01 Pa·s or more. The upper limit of the viscosity of the (A) epoxy resin at 150°C may be 1.0 Pa·s or less, or 0.5 Pa·s or less. When the (A) epoxy resin has a viscosity at 150°C within the above range, production is facilitated, molded articles of the resin composition, such as tablets or pulverized powder for compression molding, can be easily produced, and the flowability during heating and molding is good. (A) The viscosity of the epoxy resin at 150°C can be measured using an ICI viscometer (in accordance with ASTM D4287, the American Society for Testing and Materials standard).

[0016] The content of the (A) epoxy resin may be 2 to 20 mass %, 3 to 15 mass %, or 4 to 12 mass % of the total amount of the resin composition. When the (A) epoxy resin content is 2 mass % or more, it becomes possible to mold a cured product, and when it is 20 mass % or less, molding becomes easy.

[0017] [(B) Phenolic resin] The (B) phenolic resin used in the present disclosure primarily functions to enhance moldability. Any (B) phenolic resin can be used without particular limitations, as long as it has two or more phenolic hydroxyl groups per molecule that can react with the epoxy groups of the epoxy resin of component (A). Examples of (B) phenolic resins include novolac-type phenolic resins such as phenol novolac resin, cresol novolac resin, trisphenolmethane-type phenol novolac resin, and naphthol novolac resin; multifunctional phenolic resins such as triphenolmethane-type phenolic resin; modified phenolic resins such as terpene-modified phenolic resin, triphenylmethane-type phenolic resin modified with formaldehyde, trihydroxyphenylmethane-type phenolic resin modified with formaldehyde, and dicyclopentadiene-modified phenolic resin; aralkyl-type phenolic resins such as phenol aralkyl resins having a phenylene skeleton and / or biphenylene skeleton, naphthol aralkyl resins having a phenylene and / or biphenylene skeleton, phenylaralkyl-type phenolic resins, and biphenylaralkyl-type phenolic resins; and bisphenol compounds such as bisphenol A and bisphenol F. (B) phenolic resins may be used alone or in combination of two or more. As the (B) phenolic resin, at least one selected from the group consisting of novolac-type phenolic resins, polyfunctional-type phenolic resins, and aralkyl-type phenolic resins may be used.

[0018] From the viewpoint of low viscosity and high flame retardancy, the (B) phenolic resin may be a polyfunctional phenolic resin, an aralkyl phenolic resin, a triphenolmethane phenolic resin, a phenol aralkyl resin, a naphthol aralkyl resin, or a biphenyl aralkyl phenolic resin.

[0019] The (B) phenolic resin can be handled as a solid at room temperature (23°C), and may have a viscosity at 150°C of 0.005 Pa·s or more, or 0.1 Pa·s or more. The upper limit of the viscosity of the (B) phenolic resin at 150°C may be 2.5 Pa·s or less, or 1.0 Pa·s or less. If the (B) phenolic resin has a viscosity at 150°C within the above range, production is facilitated, and molded articles of the resin composition, such as tablets or pulverized powder for compression molding, can be easily produced, and the flowability during heating and molding is good. (B) The viscosity of the phenolic resin at 150°C can be measured using an ICI viscometer (in accordance with ASTM D4287, the American Society for Testing and Materials standard).

[0020] The content of the (B) phenolic resin may be 0.5 to 1.5 equivalents or 0.5 to 1.2 equivalents of hydroxyl groups in the (B) phenolic resin per equivalent of epoxy groups in the (A) epoxy resin. By including the (B) phenolic resin in the above-mentioned equivalent ratio, a molded product with well-balanced performance can be obtained.

[0021] [(C) Curing accelerator] The curing accelerator (C) used in the present disclosure is not particularly limited as long as it is one that is commonly used as a curing accelerator for epoxy resins. Examples of the (C) curing accelerator include cycloamidine compounds such as 1,8-diazabicyclo[5.4.0]undecene-7, 1,5-diazabicyclo[4.3.0]nonene-5, and 5,6-dibutylamino-1,8-diazabicyclo[5.4.0]undecene-7; quinone compounds such as maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinone, and phenyl-1,4-benzoquinone; compounds having intramolecular polarization obtained by adding a compound having a π bond, such as diazophenylmethane or a phenolic resin, to these cycloamidine compounds; tertiary amine compounds such as benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol, and derivatives thereof; and 2-methylimidazole, 2-ethylimidazole. 2-phenylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 2-heptadecylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]- imidazole compounds and derivatives thereof, such as diamino-s-triazine compounds having an imidazole ring, such as ethyl-s-triazine and 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine; organic phosphine compounds, such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris(4-methylphenyl)phosphine, diphenylphosphine, and phenylphosphine;Examples of phosphorus compounds with intramolecular polarization include those obtained by adding quinone compounds such as maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinone, and phenyl-1,4-benzoquinone, and compounds with π bonds such as diazophenylmethane and phenolic resins to these organic phosphine compounds; tetra-substituted phosphonium tetra-substituted borates such as tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium ethyltriphenylborate, and tetrabutylphosphonium tetrabutylborate; and tetraphenylboron salts such as 2-ethyl-4-methylimidazole tetraphenylborate and N-methylmorpholine tetraphenylborate, as well as derivatives thereof. (C) Curing accelerators may be used alone or in combination of two or more.

[0022] From the viewpoint of fluidity, the (C) curing accelerator may be an imidazole compound.

[0023] The content of the (C) curing accelerator may be 0.05 to 3.00 mass%, 0.10 to 2.00 mass%, or 0.15 to 1.00 mass% relative to the total amount of the resin composition. When the content of the (C) curing accelerator is 0.05 mass% or more, a curing-accelerating effect can be obtained, and when it is 3.00 mass% or less, good filling properties can be obtained.

[0024] [(D) Inorganic filler] The (D) inorganic filler used in the present disclosure is not particularly limited as long as it is one that is commonly used in encapsulating resin compositions. Examples of (D) inorganic fillers that can be used include powders such as fused silica, crystalline silica, alumina, zircon, calcium silicate, calcium carbonate, potassium titanate, barium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, fosterite, steatite, spinel, mullite, and titania, as well as spherical beads, single-crystal fibers, and glass fibers. One type of (D) inorganic filler may be used alone, or two or more types may be used in combination.

[0025] The inorganic filler (D) may be fused silica to reduce the coefficient of thermal expansion, or alumina to increase thermal conductivity. In semiconductor packages, high thermal conductivity is desirable to dissipate heat generated by the chip to the outside. The shape of the inorganic filler (D) may be spherical to improve fluidity during molding and reduce mold wear.

[0026] The (D) inorganic filler may have an average particle size of 1 to 50 μm, or 2 to 30 μm. When the (D) inorganic filler has an average particle size within the above range, the flowability of the resin composition can be improved. Furthermore, in a single-sided sealed package, wire deformation can be reduced and the resin composition can be improved in filling narrow spaces. In this disclosure, the average particle size refers to the particle size (D50) at which the cumulative percentage from the smallest diameter reaches 50% in a volumetric particle size distribution obtained using a laser diffraction / scattering particle size analyzer. When multiple types of inorganic fillers are blended as component (D), the average particle size refers to the overall average particle size of the blended inorganic fillers.

[0027] The content of the (D) inorganic filler is 60 to 95% by mass relative to the total amount of the resin composition. If the content of the (D) inorganic filler is less than 60% by mass, the molding shrinkage of the resin composition may increase, which may cause warping of the resulting package, while if it exceeds 95% by mass, the fluidity and moldability of the resin composition may decrease. From these viewpoints, the content of the (D) inorganic filler may be 70 to 90% by mass relative to the total amount of the encapsulating resin composition. Furthermore, when the inorganic filler (D) is silica, its content may be 76 to 85 mass %, and when it is alumina, its content may be 85 to 91 mass %.

[0028] [(E) Shrinkage Adjuster] The shrinkage modifier (E) used in the present disclosure is a compound represented by the following general formula (1) and having a maximum particle size of 105 μm or less. By including the shrinkage modifier (E), the semiconductor encapsulating resin composition of the present disclosure can reduce the molding shrinkage of the resin composition and reduce warpage of the resulting package. This effect is achieved by the shrinkage modifier (E) acting as a crystal nucleating agent, and further, it does not adversely affect the fluidity of the resin.

[0029] [ka]

[0030] In general formula (1), R 1 and R 2 are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. R 1 and R 2 Examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a pentyl group, a neopentyl group, and a hexyl group. 1 and R 2 may be a tert-butyl group or a hexyl group.

[0031] The compound represented by general formula (1) may be tris(2,4-di-t-butylphenyl)phosphite represented by the following formula (i): (E) By using tris(2,4-di-t-butylphenyl)phosphite as a shrinkage modifier, in addition to the effect of reducing molding shrinkage, a flame retardant effect is exhibited.

[0032] [ka]

[0033] The shrinkage adjuster (E) has a maximum particle size of 105 μm or less. If the maximum particle size of the shrinkage adjuster (E) exceeds 105 μm, voids or flow marks may occur on the surface of the molded product, which may impair the appearance of the resulting package. From this perspective, the maximum particle size of the shrinkage adjuster (E) may be 75 μm or less, or may be 53 μm or less. Here, the "maximum particle size" refers to the particle size measured by a dry sieving method, and is defined by the size of the opening of the finest sieve among those through which at least 95% by mass of the sample passes.

[0034] The method for adjusting the maximum particle size of the (E) shrinkage modifier is not particularly limited as long as it can be pulverized to a particle size of 105 μm or less. Examples of the method include methods using a pulverizer such as a cutting mill, ball mill, cyclone mill, hammer mill, vibration mill, cutter mill, grinder mill, or speed mill. The maximum particle size of the shrinkage modifier (E) can be measured by a dry sieving method, specifically by the method described in the Examples.

[0035] The content of the (E) shrinkage modifier is 0.3 to 3.5% by mass relative to the total amount of the resin composition. If the content of the (E) shrinkage modifier is less than 0.3% by mass, the effect of reducing the molding shrinkage of the resin composition is small, and the resulting package may warp significantly. If the content exceeds 3.5% by mass, the strength of the cured product may decrease. From this perspective, the content of the (E) shrinkage modifier may be 0.3 to 3.0% by mass or 0.5 to 2.5% by mass relative to the total amount of the resin composition.

[0036] [(F) Colorant] The semiconductor encapsulating resin composition of the present disclosure may further contain a colorant (F) from the viewpoint of light-blocking properties. Examples of the (F) colorant include carbon black, titanium black, aniline blue, chrome yellow, phthalocyanine blue, red iron oxide, etc. The (F) colorant may be carbon black.

[0037] When the semiconductor encapsulating resin composition of the present disclosure contains a colorant (F), the content thereof may be 0.05 to 3.00 mass%, 0.10 to 2.00 mass%, or 0.15 to 1.00 mass%, relative to the total amount of the encapsulating resin composition.

[0038] [Other ingredients] In addition to the above-described components, the semiconductor encapsulation resin composition of the present disclosure may contain additives, such as a mold release agent, a flame retardant, a coupling agent such as a silane coupling agent, an ion trapping agent, and a wax such as carnauba wax, which are generally blended into compositions of this type, as needed. When the semiconductor encapsulating resin composition of the present disclosure contains the above additives, the content thereof may be 0.05 to 3.00 mass%, 0.10 to 2.00 mass%, or 0.15 to 1.00 mass%, respectively, relative to the total amount of the resin composition.

[0039] In the semiconductor encapsulating resin composition of the present disclosure, the total content of the components (A) to (E) may be 80% by mass or more, 90% by mass or more, or 95% by mass or more.

[0040] [Physical Properties of Semiconductor Encapsulating Resin Composition] The resin composition for semiconductor encapsulation according to the present disclosure may have a flow viscosity at 175°C of 15 Pa·s or less, 10 Pa·s or less, or 8 Pa·s or less. The resin composition for semiconductor encapsulation according to the present disclosure may have a molding shrinkage rate of 0.30% or less, 0.28% or less, or 0.25% or less. The flow viscosity and molding shrinkage can be measured by the method described in the examples.

[0041] [Preparation of semiconductor encapsulation resin composition] In preparing the semiconductor encapsulation resin composition of the present disclosure, (A) epoxy resin, (B) phenolic resin, (C) curing accelerator, (D) inorganic filler, (E) shrinkage modifier, (F) colorant which is blended as needed, and various additives are thoroughly mixed (dry blended) using a mixer or the like, and then melt-kneaded using a kneading device such as a heated roll or kneader, cooled, and then pulverized to an appropriate size. The pulverization method is not particularly limited, and a general pulverizer such as a cutting mill, ball mill, cyclone mill, hammer mill, vibration mill, cutter mill, or grinder mill can be used.

[0042] The semiconductor encapsulation resin composition of the present disclosure can be used for coating, insulating, encapsulating, etc., various electrical components or various electronic components such as semiconductor elements.

[0043] [Semiconductor Devices] The semiconductor device of the present disclosure includes a substrate, a semiconductor element mounted on the substrate, and a cured product of the semiconductor encapsulation resin composition that encapsulates the semiconductor element. Examples of the substrate include a wiring substrate such as an interposer, a lead frame, and a flexible printed circuit board. Examples of semiconductor elements include transistors, integrated circuits, diodes, and thyristors.

[0044] Molding methods such as transfer molding, compression molding, and injection molding can be used to encapsulate electronic components such as semiconductor elements mounted on a substrate using the resin composition of the present disclosure. Molding can be performed, for example, at a temperature of 120 to 200°C and a pressure of 2 to 20 MPa. Molding and encapsulating electronic components such as semiconductor elements under these conditions can produce resin-encapsulated electronic component devices and semiconductor devices with minimal package warpage and excellent workability during assembly. This method is particularly suitable for single-sided encapsulated packages such as ball grid arrays (BGAs) and land grid arrays (LGAs) that are connected by bumps. [Example]

[0045] The present disclosure will now be described in detail with reference to examples, but the present disclosure is not limited to these examples in any way.

[0046] (Examples 1 to 3 and Comparative Examples 1 to 7) The components of the types and amounts shown in Table 1 were kneaded in a twin-screw extrusion kneader at a kneading temperature of 100° C. for a kneading time of 5 minutes to prepare a resin composition. The tris(2,4-di-t-butylphenyl) phosphite used in Examples 1 to 3 was prepared by placing 100 g of tris(2,4-di-t-butylphenyl) phosphite and 500 g of 10 mm alumina balls in a 1 L ball mill and processing for 30 minutes to obtain the maximum particle size. 53μm The tris(2,4-di-t-butylphenyl)phosphite used in Comparative Example 2 was not subjected to a ball mill treatment and had a maximum particle size of 700 μm. The maximum particle size of the tris(2,4-di-t-butylphenyl)phosphite used in Examples 1 to 3 and the tris(2,4-di-t-butylphenyl)phosphite used in Comparative Example 2 was determined by dry sieving using sieves with predetermined mesh sizes, and the size of the mesh size of the finest sieve among those through which at least 95% by mass of the sample passes.

[0047] Details of each component used in preparing the resin composition and shown in Table 1 are as follows.

[0048] [(A) Epoxy resin] YX-4000: Biphenyl-type epoxy resin (trade name, manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 185, viscosity at 150°C: 0.012 Pa s)

[0049] [(B) Phenolic resin] HE910-10: Triphenolmethane type phenolic resin (trade name, manufactured by Air Water Performance Chemicals Inc., hydroxyl equivalent: 101, viscosity at 150°C: 0.12 Pa s)

[0050] [(C) Curing accelerator] 2P4MHZ: 2-phenyl-4-methyl-5-hydroxymethylimidazole (trade name, manufactured by Shikoku Chemicals Corporation)

[0051] [(D) Inorganic filler] AL20-75R: Spherical alumina (product name, manufactured by Nippon Steel Chemical & Material Co., Ltd., average particle size: 15 μm)

[0052] [(E) Shrinkage Adjuster] (E-1): IRGAFOS 168 (trade name, manufactured by BASF; tris(2,4-di-t-butylphenyl)phosphite) adjusted to a maximum particle size of 53 μm

[0053] [Other phosphite compounds] (e-1): ADK STAB 1500 (trade name, manufactured by ADEKA Corporation; tetra-C12-15-alkyl(propane-2,2-diylbis(4,1-phenylene))bis(phosphite)) (e-2): ADK STAB PEP-36 (trade name, manufactured by ADEKA Corporation; 3,9-bis(2,6-di-tert-butyl-4-methylphenoxy)-2,4,8,10-tetraoxa-3,9-diphosphaspiro[5.5]undecane) (e-3): ADK STAB PEP-8 (trade name, manufactured by ADEKA Corporation); 3,9-bis(octadecyloxy)-2,4,8,10-tetraoxa-3,9-diphosphaspiro[5.5]undecane (e-4): IRGAFOS 168 (trade name, manufactured by BASF; tris(2,4-di-t-butylphenyl)phosphite), maximum particle size: 700 μm)

[0054] [Phenol compounds] (e-5): IRGANOX 1010 (trade name, manufactured by BASF; tetrakis[3-(3',5'-di-t-butyl-4'-hydroxyphenyl)propionic acid]pentaerythritol)

[0055] [(F) Colorant] MA-600: Carbon black (product name, manufactured by Mitsubishi Chemical Corporation)

[0056] [Other ingredients] Silane coupling agent: KBM-403 (product name, manufactured by Shin-Etsu Chemical Co., Ltd.) Release agent: Carnauba wax No. 1 (product name, manufactured by Toyo Petrolite Co., Ltd.) Liquid polybutadiene rubber: Ricon 657 (product name, manufactured by Tomoe Engineering Co., Ltd.)

[0057] [Evaluation items] (Evaluation of Resin Composition) (1) Spiral flow Using a spiral flow measurement mold conforming to ATSM3123, the resin composition was molded under the following conditions, and the distance to the flow front was measured. [Molding conditions] Mold temperature: 175℃ Injection pressure: 70kgf / cm 2 Molding time: 120 seconds [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: 220cm or more B: Over 190cm and under 220cm C: 150cm or more and less than 190cm D: Under 150cm

[0058] (2) Gel time The resin composition was spread in a circle with a diameter of 4 to 5 cm on a hot plate maintained at 175°C and kneaded at a constant speed, and the time it took for the resin composition to thicken and finally lose its viscosity was measured. [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: 45 seconds or more B: 40 seconds or more but less than 45 seconds C: 30 seconds or more but less than 40 seconds D: Less than 30 seconds

[0059] (3) Flow viscosity The resin composition was measured at 175°C and a shear stress of 1.23 × 10 using a high-performance flow measurement device (Shimadzu Corporation, product name: CFT-500C). 5 The sample was placed in an environment of 100 Pa and the minimum melt viscosity (η1) was measured. [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: Less than 7 Pa·s B: 7 Pa·s or more, less than 15 Pa·s C: 15 Pa·s or more, less than 20 Pa·s D:20Pa·s or more

[0060] (4) Mold shrinkage rate The resin composition was molded under the following conditions using a mold with a diameter of 80 mm at room temperature (23°C), and calculations were made from the difference in diameter between the molded resin composition and the mold at room temperature. Mold shrinkage rate = (mold diameter at room temperature - diameter of molded resin composition at room temperature) / mold diameter at room temperature x 100 [Molding conditions] Mold temperature: 175℃ Injection pressure: 70kgf / cm 2 Molding time: 120 seconds Post-curing: 175℃, 8 hours

[0061] (5) Bending strength Test pieces measuring 4 mm x 10 mm x 80 mm were prepared under the following conditions and measured at a temperature of 25°C in accordance with JIS K 6911:2006. [Test piece preparation conditions] Mold temperature: 175℃ Injection pressure: 70kgf / cm 2 Molding time: 120 seconds Post-curing: 175℃, 8 hours [Judgment criteria] The above measurement results were evaluated according to the following criteria. A:175MPa or more B: 130MPa or more and less than 175MPa C: 100MPa or more and less than 130MPa D: Less than 100 MPa

[0062] (6) Flame retardancy Based on the UL-94 standard, a flame retardancy test was conducted on a 125mm x 13mm x 4mm test piece prepared under the following conditions. [Test piece preparation conditions] Mold temperature: 175℃ Injection pressure: 70kgf / cm 2 Molding time: 120 seconds Post-curing: 175℃, 8 hours

[0063] The upper end of the obtained test specimen was clamped to hold the specimen vertically, and a specified blue flame 20±1 mm high was applied to the lower end for 10 seconds, then released, and the burning time of the test specimen (burning time after the first flame exposure; t1) was measured. Immediately after the flame was extinguished, the lower end of the test specimen was again exposed to the flame and released, and the burning time of the test specimen (burning time after the second flame exposure; t2) and glow time (t3) were measured. The same measurement was repeated for five test specimens, obtaining a total of 10 data points: five for the first burning time and five for the second burning time. [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: t1 per test piece is 10 seconds or less, t2 is 10 seconds or less, t2 + t3 is 30 seconds or less, and the total t1 + t2 of the five test pieces is 50 seconds or less, and there is no combustion up to the clamp or ignition of the cotton by dripping material. B: Does not meet the criteria of A, t1 per test piece is 30 seconds or less, t2 is 30 seconds or less, t2 + t3 is 60 seconds or less, the total t1 + t2 of the five test pieces is 250 seconds or less, and there is no combustion up to the clamp or ignition of cotton by dripping material. C: Does not meet the criteria of A, t1 per test piece is 30 seconds or less, t2 is 30 seconds or less, t2 + t3 is 60 seconds or less, t1 + t2 for the total of 5 test pieces is 250 seconds or less, there is no combustion up to the clamp, and cotton is ignited by dripping material. D: t1 per test piece is longer than 30 seconds, or t2 is longer than 30 seconds, or t2 + t3 is longer than 60 seconds, or the total t1 + t2 of the five test pieces is longer than 250 seconds, or there is burning up to the clamp.

[0064] (Evaluation after packaging) The obtained resin composition was transferred under the following conditions to prepare the following evaluation packages. [Package manufacturing conditions] Mold temperature: 175℃ Injection pressure: 70kgf / cm 2 Molding time: 120 seconds Post-curing: 175℃, 8 hours

[0065] (7) Package appearance Eight 35mm x 35mm PBGA packages (sealing size 29mm x 29mm x 1.04mm) were fabricated, and the surfaces of the molded products were observed to check for the occurrence of voids or flow marks. The evaluation was carried out as follows. Voids: Check for voids on the package surface using a stereo microscope. Flow marks: Visually check for flow marks on the surface of the package. [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: No voids or flow marks on the surface B: 1 to 5 packages have voids or flow marks on the surface C: Voids or flow marks on the surface of 6 to 8 packages

[0066] (8) Package warpage A 35mm x 35mm PBGA package (sealing size 29mm x 29mm x 1.04mm) was fabricated using a BT substrate (thickness: 0.54mm) and solder resist PSR-4000 AUS-308. The warpage of the resulting package was measured at room temperature (23°C) using a shadow moire (PS200) manufactured by AKROMETRIX. [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: Package warpage is between -50μm and 50μm B: Package warpage is between -100μm and -50μm, or between 50μm and 100μm C: Package warpage is between -150 μm and -100 μm, or between 100 μm and 150 μm D: Package warpage is less than -150 μm or 150 μm or more

[0067] (9) Wire sweep After molding an FBGA package (175mm x 49mm x 0.45mm), the deformation of the wire (Φ20μm, length 3mm) was observed using an X-ray inspection device (manufactured by Pony Industrial Co., Ltd.), and the wire sweep rate at the most deformed part was measured. [Judgment criteria] The above measurement results were evaluated according to the following criteria. A: Less than 3% B: 3% or more but less than 5% C: 5% or more but less than 10% D: 10% or more

[0068] [Table 1]

[0069] The resin compositions of Examples 1 to 3, which contain a predetermined amount of shrinkage modifier (E) having a specific structure with a maximum particle size of 105 μm or less, have excellent resin fluidity, strength, and flame retardancy. Furthermore, it is clear that packages sealed with these resin compositions have excellent appearance and are less susceptible to wire deformation and package warpage.

Claims

1. (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) a shrinkage modifier; The shrinkage modifier (E) is a compound represented by the following general formula (1) having a maximum particle size of 105 μm or less: A resin composition for semiconductor encapsulation, wherein the content of the inorganic filler (D) is 60 to 95 mass % and the content of the shrinkage modifier (E) is 0.3 to 3.5 mass % relative to the total amount of the resin composition. 【Chemistry 1】 (In formula (1), R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.) Here, the maximum particle size is a particle size measured by a dry sieving method, and refers to a particle size defined by the size of the opening of the finest sieve among sieves through which at least 95% by mass of the sample passes.

2. 2. The semiconductor encapsulating resin composition according to claim 1, which has a flow viscosity at 175°C of 15 Pa·s or less and a molding shrinkage rate of 0.30% or less. Here, the flow viscosity is defined as the minimum melt viscosity (η1) measured under an environment of a shear stress of 1.23×10 5 Pa. The molding shrinkage rate was calculated from the difference in diameter between the molded resin composition and the mold at room temperature, after molding the resin composition under the following conditions using a mold with a diameter of 80 mm at room temperature (23°C). Molding shrinkage rate=(mold diameter at room temperature−diameter of molded resin composition at room temperature) / mold diameter at room temperature×100 [Molding conditions] Mold temperature: 175°C Injection pressure: 70 kgf / cm2 Molding time: 120 seconds Post-curing: 175℃, 8 hours

3. 3. The semiconductor encapsulating resin composition according to claim 1, wherein the epoxy resin (A) has a viscosity at 150°C of 0.005 Pa·s or more.

4. 4. The semiconductor encapsulating resin composition according to claim 1, wherein the phenolic resin (B) has a viscosity at 150° C. of 0.005 Pa·s or more.

5. 5. The semiconductor encapsulating resin composition according to claim 1, wherein the inorganic filler (D) has an average particle size of 1 to 50 μm.

6. 6. The semiconductor encapsulating resin composition according to claim 1, wherein the inorganic filler (D) is alumina.

7. 7. The semiconductor encapsulating resin composition according to claim 1, further comprising a colorant (F), wherein the colorant (F) is carbon black.

8. A semiconductor device comprising: a substrate; a semiconductor element mounted on the substrate; and a cured product of the semiconductor encapsulation resin composition according to any one of claims 1 to 7, which encapsulates the semiconductor element.

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