Substrate Processing Equipment

Abstract

To provide a substrate processing device that shortens the exhaustion time of a supercritical fluid to reduce process time.SOLUTION: A substrate processing device 100 includes: a vessel part 110 that includes supply ports 111P1, 111P2 to which a process fluid is supplied, and an exhaust port 111P3 where the process fluid is discharged; a fluid supply unit that supplies the process fluid; and an exhaust unit that discharges the process fluid from the vessel part 110. The exhaust unit includes a main line 142 that is connected to the exhaust port 111P3, an extension line 143 that branches from the main line 142 and includes at least one of a first orifice 143F and a first check valve 143C, with the discharge velocity adjusted thereby, and an auxiliary line 145 that branches from the main line 142, and in which no orifice nor a check valve is formed. The process fluid is discharged via the extension line 143 during a first process time and the process fluid is discharged via the auxiliary line 145 during a second process time.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Manufacturing semiconductor devices involves various processes such as deposition, photolithography, etching, and cleaning. Among these, photolithography includes a coating process, an exposure process, and a development process. The coating process is a process of coating a photosensitive solution such as photoresist onto a substrate. The exposure process is a process of exposing the coated photoresist film to light from a light source through a photomask to expose a circuit pattern on the substrate. The development process is a process of selectively developing the exposed areas of the substrate.

[0003] The development process includes a developer supply step, a rinse solution supply step, and a drying step. The drying step involves spin drying, which involves rotating a spin chuck supporting the substrate and applying centrifugal force to the substrate to dry off any remaining developer or rinse solution on the substrate.

[0004] Recently, as the distance between patterns formed on a substrate (CD: Critical Dimension) becomes smaller, the spin drying process causes a leaning phenomenon in which the pattern collapses or becomes distorted. Therefore, drying devices using supercritical fluids have been introduced. Summary of the Invention

[0005] [Problem to be solved by the invention] Meanwhile, a supercritical dryer has an enclosed space where pressure and temperature are higher than normal pressure and temperature, and processes substrates by inflowing and outflowing a supercritical fluid into the enclosed space. However, it is necessary to shorten the exhaust time of the supercritical fluid to reduce the process time.

[0006] An object of the present invention is to provide a substrate processing apparatus capable of shortening processing time.

[0007] The objects of the present invention are not limited to those mentioned above, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0008] [Means for solving the problem] In order to achieve the above object, one aspect of the substrate processing apparatus of the present invention includes a vessel portion having a substrate processing region formed therein, the vessel portion including a supply port through which a processing fluid is supplied to the substrate processing region and an exhaust port through which the processing fluid is exhausted from the substrate processing region; a fluid supply unit that supplies the processing fluid to the substrate processing region; and an exhaust unit that exhausts the processing fluid from the vessel portion, the exhaust unit including: a main line connected to the exhaust port; an extension line branching from at least one of a first node and a second node of the main line and including at least one of a first orifice or a first check valve to adjust the exhaust speed; and an auxiliary line branching from a third node of the main line and not including an orifice or a check valve, wherein the processing fluid is exhausted through the extension line during a first process time and not exhausted through the auxiliary line during a second process time.

[0009] An embodiment of the substrate processing apparatus of the present invention for achieving the other object includes a vessel portion in which a substrate processing region is formed, the vessel portion including a supply port through which a processing fluid is supplied to the substrate processing region and an exhaust port through which the processing fluid is exhausted from the substrate processing region; a fluid supply unit that supplies the processing fluid to the substrate processing region; an exhaust unit that exhausts the processing fluid from the vessel portion and includes a main line that is connected to the exhaust port, an extension line that branches off from at least one of a first node and a second node of the main line, and an auxiliary line that branches off from a third node of the main line; a first tank to which the extension line is connected; and a second tank that is physically separated from the first tank and connected to the auxiliary line.

[0010] According to another aspect of the present invention, there is provided a substrate processing apparatus including: a chamber member forming a storage space; a control box disposed adjacent to the chamber member; a vessel portion disposed in the storage space, forming a substrate processing region for processing a substrate having a liquid film treated with an organic solvent, the vessel portion including a supply port for supplying CO2 in a supercritical state as a supercritical fluid to the substrate processing region and an exhaust port for exhausting the supercritical fluid from the substrate processing region; a fluid supply unit for supplying the supercritical fluid to the substrate processing region; an exhaust unit for exhausting the supercritical fluid from the vessel portion, the exhaust unit including: a main line connected to the exhaust port; a first line branching from a first node of the main line and including at least one of a first orifice or a first check valve located inside the control box to adjust the exhaust speed; and a second line branching from a second node of the main line and including at least one of a second orifice or a second check valve located inside the control box to adjust the exhaust speed. a second line in which the pressure is adjusted; an auxiliary line branching from a third node of the main line inside the chamber member and not having an orifice or a check valve; a first tank connecting the first line and the second line; and a second tank physically separated from the first tank and connected to the auxiliary line, wherein a first valve provided in the first line and a second valve provided in the second line close a flow path when the power is OFF and open a flow path when the power is ON, and a third valve provided in the auxiliary line closes a flow path when the power is ON. and closing the flow path with the power turned off, and opening the flow path, discharging the supercritical fluid through the first line for a first process time, discharging the supercritical fluid through the second line for a second process time, not discharging the supercritical fluid through the auxiliary line for the first process time and the second process time, and discharging the supercritical fluid through the auxiliary line for a third process time, and opening the auxiliary line at a pressure below the critical pressure, and discharging the supercritical fluid at a pumping speed higher than the maximum pumping speed of the first line and the second line.

[0011] Specific details of other embodiments are included in the detailed description and drawings. [Brief explanation of the drawings]

[0012] [Figure 1] 1 illustrates a substrate processing apparatus according to some embodiments of the present invention. [Figure 2] 1 illustrates the interior of a supercritical chamber of a substrate processing apparatus according to some embodiments of the present invention. [Figure 3] 1 is a diagram showing a substrate processing apparatus according to a first embodiment of the present invention. [Figure 4] FIG. 10 is a view showing how a processing fluid is supplied via a lower supply line in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 5] FIG. 10 is a view showing how a processing fluid is supplied via an upper supply line and exhausted via a first line in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 6] FIG. 10 is a view showing how a processing fluid is exhausted through a second line in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 7] FIG. 10 is a view showing how a processing fluid is exhausted through an auxiliary line in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 8] FIG. 10 illustrates pressure variation over time in a substrate processing apparatus according to some embodiments of the present invention. [Figure 9] 1 illustrates the opening and closing of flow channels over time in a substrate processing apparatus according to some embodiments of the present invention. [Figure 10] FIG. 10 is a diagram showing pressure changes over time in the substrate processing apparatus of the comparative example. [Figure 11] 1 is a flowchart illustrating a substrate processing method in a substrate processing apparatus according to some embodiments of the present invention. [Figure 12] 10 is a flowchart illustrating opening of a flow path in an extension line in a substrate processing method of a substrate processing apparatus according to some embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0013] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Advantages and features of the present invention, as well as methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various different forms. These embodiments are provided solely to complete the disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art to which the present invention pertains. The present invention is defined solely by the scope of the claims. The same reference symbols refer to the same elements throughout the specification.

[0014] The terms used in this specification are for the purpose of describing the embodiments and are not intended to limit the present invention. In this specification, the singular forms "a," "an," and "the" include the plural forms unless otherwise specified in the context. When used in this specification, the terms "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components, steps, operations, and / or elements to a referenced component, step, operation, and / or element.

[0015] FIG. 1 illustrates a substrate processing apparatus according to some embodiments of the present invention.

[0016] FIG. 2 is a view showing the inside of the supercritical chamber of the substrate processing apparatus according to the first embodiment of the present invention.

[0017] 1, the substrate processing apparatus 1 may include an index module 20 and a treating module 30. For example, the index module 20 and the treating module 30 are arranged in a line along the X-axis direction.

[0018] The index module 20 transports the substrate W from a container (not shown) containing the substrate W to the processing module 30 and stores the processed substrate W back into the container. For example, the index module 20 may include a load port 22 and an index robot 23. A container containing the substrate W may be placed on the load port 22. The index robot 23 is provided to be movable along a guide rail 24 provided in the Y-axis direction.

[0019] The processing module 30 may include a buffer chamber 31, a transfer chamber 32, a wet processing chamber 33, and a supercritical chamber .

[0020] The buffer chamber 31 is provided between the index module 20 and the transfer chamber 32. However, this is not limiting. The buffer chamber 31 can store multiple substrates W together. The substrates W stored in the buffer chamber 31 are transferred in and out by the index robot 23 and the transfer robot 32RB.

[0021] The transfer chamber 32 transfers the substrate W between the wet treatment chamber 33 and the supercritical chamber 34. The transfer chamber 32 is provided with its longitudinal direction parallel to the X-axis direction. A transfer robot 32RB is provided in the transfer chamber 32. The transfer robot 32RB may have a hand on which the substrate W is placed. A guide rail 32GR is provided in the transfer chamber 32 with its longitudinal direction parallel to the X-axis direction, and the transfer robot 32RB may be provided to be movable on the guide rail 32GR.

[0022] The wet processing chamber 33 processes a liquid film on the substrate W. For example, the wet processing chamber 33 performs a cleaning process on the substrate W to clean the patterned surface of the substrate W. The processing liquid discharged from the wet processing chamber 33 is a cleaning liquid, which may include chemicals, deionized water (DIW), and an organic solvent. The organic solvent may include isopropyl alcohol (IPA).

[0023] The supercritical chamber 34 is disposed adjacent to the wet processing chamber 33. The supercritical chamber 34 processes the substrate W by supplying a supercritical fluid to the substrate W. For example, the supercritical chamber 34 supplies a supercritical fluid to the substrate W processed in the wet processing chamber 33 to dry the substrate W. In other words, the supercritical chamber 34 dries organic solvents remaining on the substrate W. For example, the supercritical fluid may be CO2 in a supercritical state.

[0024] A substrate processing apparatus 100 that performs supercritical drying in a supercritical chamber 34 will be described below with reference to the drawings.

[0025] Referring to FIG. 2, the substrate processing apparatus 100 according to the first embodiment may include a chamber member 34C, a control box 34P, a vessel portion 110, a substrate support unit 120, a fluid supply unit 130, an exhaust unit 140, a heating member 150, and a drain tank 160.

[0026] The chamber members 34C may be provided in a plurality of rows in the horizontal direction so as to provide a plurality of supercritical drying spaces, but are not limited thereto.

[0027] The chamber member 34C has an accommodation space for accommodating the vessel part 110. In other words, the chamber member 34C is provided to separate the space from the buffer chamber 31 and the wet processing chamber 33. An opening (not shown) through which the substrate W enters and exits is formed in the chamber member 34C.

[0028] The control box 34P is provided adjacent to the chamber member 34C. For example, the control box 34P accommodates a storage tank (not shown) of the fluid supply unit 130 and the exhaust unit 140.

[0029] The vessel 110 provides a substrate processing region 110S (which may be a supercritical processing space) where a drying process is performed. The vessel 110 has an upper body 111 and a lower body 112, which are coupled to each other to provide the substrate processing region 110S.

[0030] Either the upper body 111 or the lower body 112 can move relative to the other, which is achieved by the driving member 110MT. For example, the upper body 111 can be fixed in position, and the lower body 112 can be raised and lowered by the driving member 110MT. Here, the driving member 110MT can be composed of an actuator using pneumatic or hydraulic pressure, a linear motor operated by electromagnetic interaction, or a ball screw mechanism, but these are merely examples.

[0031] When the lower body 112 separates from the upper body 111, the substrate processing region 110S is opened, and at this time, the substrate W is loaded or unloaded. During the process, the lower body 112 is in close contact with the upper body 111, sealing the substrate processing region 110S from the outside.

[0032] Furthermore, the vessel part 110 may include an upper supply port 111P1, a lower supply port 111P2, and an exhaust port 111P3. Here, the upper supply port 111P1 forms a supply flow path for the treatment fluid provided in the upper body 111, and the lower supply port 111P2 forms a supply flow path for the treatment fluid provided in the lower body 112. And the exhaust port 111P3 forms an exhaust flow path for the treatment fluid provided in the lower body 112.

[0033] The substrate supporting unit 120 supports the substrate W in a horizontal position within the substrate processing region 110S of the vessel part 110. The substrate supporting unit 120 supports the substrate W with its processing surface facing upward. The substrate supporting unit 120 may include a first supporting member 121, a second supporting member 122, and a plate 123.

[0034] The first support member 121 and the second support member 122 may support different regions of the substrate W. The first support member 121 supports the edge region of the substrate W, and the second support member 122 supports the central region of the substrate W.

[0035] For example, the first support member 121 may extend downward from the upper body 111 and be bent toward the substrate W. The second support member 122 is provided on a plate 123. For example, the plate 123 may be a circular plate. The plate 123 is located between the lower supply port 111P2 and the first support member 121.

[0036] The plate 123 has a diameter that covers all of the lower supply port 111P2 and the exhaust port 111P3. Therefore, the flow path of the processing fluid supplied from the lower supply port 111P2 is diverted by the plate 123. In other words, the plate 123 can prevent the supercritical fluid supplied from the lower supply port 111P2 from being directly supplied to the non-processing surface of the substrate W.

[0037] The fluid supply unit 130 supplies a processing fluid, which is a drying fluid, to the substrate processing region 110S of the vessel 110. By way of example, the processing fluid is supplied to the substrate processing region 110S in a supercritical state at a critical temperature and a critical pressure, but is not limited thereto.

[0038] For example, the fluid supply unit 130 may include a storage tank (not shown) in which the fluid is stored, an upper supply line 132, and a lower supply line 134. The upper supply line 132 is connected to the upper supply port 111P1. The lower supply line 134 branches off from the upper supply line 132 and is connected to the lower supply port 111P2.

[0039] A processing fluid (which may be CO in a supercritical state) stored in a storage tank is supplied to the substrate processing region 110S via an upper supply line 132 and a lower supply line 134. Valves (not shown) may be provided in the upper supply line 132 and the lower supply line 134, respectively, to adjust the flow rate of the processing fluid.

[0040] The exhaust unit 140 may include a main line 142, an extension line, an auxiliary line 145, and a pump (not shown). In some embodiments, the extension line may include a first line 143 and a second line 144 (see FIG. 3). That is, the extension line may be provided with multiple lines, and each of the first line 143 and the second line 144 may be provided with one or more lines.

[0041] In the following, a case where the extension line of the first embodiment is provided as the first line 143 will be described.

[0042] For forced evacuation, a pump may be provided in at least one of the main line 142, the first line 143, and the auxiliary line 145. Furthermore, in the second embodiment, a pump may also be provided in the second line 144.

[0043] The treated fluid exhaust from the exhaust unit 140 is the same as or similar to that of the second embodiment, i.e., the difference is that the exhaust from the first line 143 in the first embodiment is divided into the first line 143 and the second line 144 in the second embodiment, and since the exhaust from the first line 143 and the second line 144 in the second embodiment are integrated into one in the first embodiment, duplicated explanations will be omitted in the description of the second embodiment.

[0044] The heating member 150 heats the substrate processing region 110S so that the substrate processing region 110S has or maintains a temperature required for the process. The heating member 150 can heat the supercritical fluid supplied to the substrate processing region 110S above its critical temperature to maintain the supercritical fluid phase.

[0045] The heating member 150 is embedded in the wall of the lower body 112 (or the upper body 111). For example, the heating member 150 is provided as a heater that receives power from an external source and generates heat.

[0046] The drain tank 160 is configured to drain the processing fluid (reactant) used to dry the substrate W, and may include a first tank 161 and a second tank 163. The drain tank 160 stores the processing fluid, including the organic solvent IPA, which is difficult to discharge into the atmosphere as a carcinogen, and forms a storage space isolated from the outside.

[0047] The first tank 161 and the second tank 163 are physically separated from each other and have separate spaces. The first tank 161 and the second tank 163 each store a supercritical fluid exhausted from the substrate processing region 110S.

[0048] The first tank 161 is connected to the first line 143 (which may be the first line 143 and the second line 144 in the second embodiment) and stores the supercritical fluid to be discharged during the supercritical processing of the substrate W. The second tank 163 is connected to the auxiliary line 145 and stores the supercritical fluid to be discharged during the completion of the supercritical processing. As described above, the tank is divided into the first tank 161 and the second tank 163, and the second tank 163 can make up for the lack of space in the first tank 161.

[0049] Furthermore, the first tank 161 and the second tank 163 are each provided with an exhaust manifold (not shown), but the pressure cannot be released during the exhaust process, and the differential pressure between the exhaust manifold (or the first tank 161) and the extension line 143 may decrease. If the exhaust speed slows down due to the decrease in differential pressure, the exhaust time gradually increases when exhausting using the extension line 143 (see FIG. 10, exhaust continues even after T4).

[0050] In this embodiment, the extension line 143 for slow exhaust and the auxiliary line 145 for fast exhaust are separated into the first tank 161 and the second tank 163, so that the exhaust speed is prevented from slowing down due to a decrease in the differential pressure between the extension line 143 and the first tank 161, and fast exhaust can be performed and maintained.

[0051] That is, even if a decrease in differential pressure due to an increase in the exhaust volume and / or back pressure due to insufficient storage space in the first tank 161 occurs, exhaust from the auxiliary line 145 is performed in the second tank 163, so phenomena such as re-entry of particles due to differential pressure and / or back pressure during the process can be prevented, thereby preventing quality degradation.

[0052] Furthermore, various emergency situations that may occur in the substrate processing apparatus 100 (e.g., a power outage that traps a supercritical fluid inside the vessel 110) can be dealt with immediately using the auxiliary line 145. This is achieved by providing a third valve 145V in the auxiliary line 145 as a valve that opens the flow path when the power is turned off, which will be described later with reference to FIG.

[0053] Modifications of this embodiment will be described below with reference to the drawings, and redundant descriptions of the same components having the same functions will be omitted.

[0054] Fig. 3 is a diagram showing a substrate processing apparatus according to a second embodiment of the present invention. Figs. 4 to 7 are diagrams showing the flow of processing fluids entering and leaving the substrate processing apparatus according to the second embodiment of the present invention. Fig. 8 is a diagram showing pressure changes over time in substrate processing apparatuses according to some embodiments of the present invention. Fig. 9 is a diagram showing the opening and closing of flow paths over time in substrate processing apparatuses according to some embodiments of the present invention, and Fig. 10 is a diagram showing pressure changes over time in a comparative substrate processing apparatus. Furthermore, Figs. 11 and 12 are flowcharts for explaining a substrate processing method in a substrate processing apparatus according to some embodiments of the present invention.

[0055] Referring first to FIG. 3, the substrate processing apparatus 100 according to the second embodiment may include a chamber member 34C, a control box 34P, a vessel portion 110, a substrate support unit 120, a fluid supply unit 130, an exhaust unit 140, a heating member 150, and a drain tank 160, which may be the same as or similar to those of the first embodiment.

[0056] However, the second embodiment differs in that the extension line includes a first line 143 and a second line 144. In other words, the extension line of the second embodiment can be formed of multiple lines.

[0057] The exhaust unit 140 of the second embodiment is provided as a main line 142, a first line 143, a second line 144 and an auxiliary line 145, as follows.

[0058] The main line 142 is connected to an exhaust port 111P3 provided in the lower body 112 to exhaust the processing fluid from the substrate processing region 110S to the outside. The main line 142 is connected to a first line 143, a second line 144, and an auxiliary line 145, respectively, and forms an upstream region where the processing fluid is exhausted.

[0059] For example, the main line 142 has a first node N1, a second node N2, and a third node N3, and has a manifold structure, but is not limited thereto.

[0060] The first line 143 branches off from the first node N1 of the main line 142. The first line 143 is provided with a first metering valve 143M, a first orifice 143F, and / or a first check valve 143C inside the control box 34P, and the pumping speed of the process fluid can be adjusted by controlling these.

[0061] The second line 144 branches off from the second node N2 of the main line 142. The second line 144 is provided with a second metering valve 144M, a second orifice 144F, and / or a second check valve 144C inside the control box 34P, and the pumping speed of the process fluid can be adjusted by controlling these.

[0062] The sizes and diameters of the first metering valve 143M, the first orifice 143F, the first check valve 143C, and the second metering valve 144M, the second orifice 144F, and the second check valve 144C may be different from each other.

[0063] As an example, the diameters of the first orifice 143F and the second orifice 144F may be different, because the first line 143 and the second line 144 each have a diameter that optimizes the pumping speed, and the first line 143 and the second line 144 have different maximum pumping speeds, but this is not limited to this.

[0064] Furthermore, for fluid supply and interruption, a first valve V1 is provided in the first line 143, and a second valve V2 is provided in the second line 144. For example, the first valve V1 and the second valve V2 may be provided as valves that close the flow path when the power is OFF and open the flow path when the power is ON. The valve that opens the flow path when the power is ON may have a structure that maintains the closed state with spring force. Therefore, it has a longer lifespan than a valve that closes the flow path when the power is ON (maintaining the closed state with fluid driving pressure).

[0065] The auxiliary line 145 branches off from the third node N3 of the main line 142, but may branch off inside the chamber member 34C located at the front end of the control box 34P. In other words, the auxiliary line 145 does not branch off from the first line 143 or the second line 144, which form resistance flow paths, and therefore can be pumped without being affected by the pumping speeds of the first line 143 and the second line 144.

[0066] Since the auxiliary line 145 does not have an orifice or check valve that forms a resistance flow path, the inner diameter between the rear end of the third valve 145V and the second tank 163 is constant. Therefore, the auxiliary line 145 can evacuate at a speed faster than the maximum pumping speed of the first line 143 and the second line 144. Furthermore, as mentioned above, since the auxiliary line 145 can evacuate independently of the decrease in differential pressure that occurs between the first line 143 / second line 144 and the first tank 161, fast pumping can be achieved.

[0067] As mentioned above, when the first line 143 or the second line 144 is evacuated, the pressure difference between the internal pressure of the substrate processing region 110S and the first tank 161 (or the exhaust manifold) may decrease. The decrease in the pressure difference delays the evacuation time using the first line 143 or the second line 144.

[0068] However, in this embodiment, since the auxiliary line 145 connected to the second tank 163 is used for exhaust, fast venting can be performed / sustained without the delay in exhaust that occurs in the first line 143 or the second line 144.

[0069] A third valve 145V is provided in the auxiliary line 145. The third valve 145V of the auxiliary line 145 is provided as a valve that closes the flow path when the power is turned on and opens the flow path when the power is turned off. The auxiliary line 145 is opened in the event of a power outage to exhaust the treatment fluid in the vessel portion 110.

[0070] As another example, the third valve 145V may be provided as a valve that closes the flow path when the power is off and opens the flow path when the power is on, the same as or similar to the first valve V1 / second valve V2. In this case, another line branching from a fourth node (not shown) of the main line 142 may be provided, and the other line may be provided with a valve that opens the flow path when the power is off, so that the fluid can be evacuated from the inside of the vessel unit 110 in an emergency such as a power outage.

[0071] The exhaust unit 140 and the fluid supply unit 130 allow the inflow and outflow (supply and exhaust) of the processing fluid.

[0072] The substrate processing method will be described below with reference to the drawings.

[0073] 4 through 9, 11, and 12, a substrate processing apparatus 100 is provided, including a chamber member 34C, a control box 34P, a vessel unit 110, a substrate support unit 120, a fluid supply unit 130, an exhaust unit 140, a heating member 150, and a drain tank 160. A substrate W is positioned in a substrate processing region 110S (S110). A processing fluid is supplied from the fluid supply unit 130 to the substrate processing region 110S for a first and second process time (S120). The flow path of the extension line is opened for a second and third process time (the process time following the second process time) (S130). The flow path of the extension line is closed and the flow path of the auxiliary line 145 is opened for a fourth process time (S140). Note that the first, second, third, and fourth process times are distinguished for ease of explanation and understanding, and are not limited by these terms. A more detailed description is provided below.

[0074] First, the substrate processing apparatus 100 according to the first and second embodiments is provided, and the case where the substrate processing apparatus 100 according to the second embodiment is provided will be described below.

[0075] Next, the substrate W is positioned in the substrate processing region 110S (S110). For this purpose, the upper body 111 and the lower body 112 are spaced apart from each other, and the substrate processing region 110S is opened (see FIG. 2). The substrate W is carried in using the transfer robot 32RB.

[0076] 4 and 8 (S120), a processing fluid is supplied to the vessel 110. For example, between time 0 and time T1, which are the first process time, the processing fluid is supplied to the substrate processing region 110S via the lower supply line 134. Here, the processing fluid that has passed through the lower supply line 134 and the lower supply port 111P2 is bypassed by the plate 123 without being directly supplied to the non-processing surface of the substrate W.

[0077] Here, when the processing fluid is supplied to the vessel unit 110, the reason for supplying the processing fluid first to the lower part is to minimize the leaning phenomenon. For example, if the processing fluid is supplied from the upper part of the substrate W, the effect of the discharge pressure of the processing fluid supplied from the upper part of the substrate W may occur. That is, the discharge pressure of the processing fluid may push the liquid film on the substrate W in a wetting state toward the pattern, causing the pattern to collapse or become distorted, resulting in the leaning phenomenon. To prevent this, the processing fluid may be supplied first to the lower part.

[0078] Once the substrate processing region 110S is filled with processing fluid, the pressure is maintained above the critical pressure (see FIG. 8, maintained above the set pressure P1) to perform supercritical drying. Here, the supercritical drying is performed using the processing fluid via the upper supply port 111P1. At this time, the lower supply line 134 is closed.

[0079] 5, 8, and 9, the pressure in the substrate processing region 110S may be maintained during the supercritical drying process (the second process time, T1 time and T2 time) (S130, S131). The pressure is maintained by simultaneously supplying and exhausting the processing fluid from the upper supply port 111P1.

[0080] For example, during the supercritical drying process, the processing fluid may be continuously supplied to the upper portion of the substrate W via the upper supply line 132 and the upper supply port 111P1 between times T1 and T2 so that the reactants substituted for the processing fluid and the organic solvent IPA are exhausted and new processing fluid dries the substrate W. At this time, an exhaust operation may be performed simultaneously to maintain the internal pressure of the substrate processing region 110S. The exhaust operation is performed by exhausting the processing fluid (reactants) via the exhaust port 111P3. The processing fluid that has passed through the exhaust port 111P3 is exhausted via the first line 143.

[0081] In other words, the first line 143 opens the flow path above the critical pressure so that the substrate processing region 110S maintains a supercritical state in the first state in which the substrate W is processed and supercritical fluid is supplied, but can exhaust an amount of processing fluid in the same range as the amount of processing fluid supplied by the fluid supply unit 130 so that the pressure does not drop below P1, which is the set pressure, between time T1 and time T2 (maintaining a pressure above the critical pressure P2).

[0082] 6, 8, and 9 (S130, S132), while approaching the completion of the supercritical drying process, i.e., before time T3, for example, between time T2 and time T3, which are the third process times, the supply of processing fluid is interrupted, and the exhaust of processing fluid from the substrate processing region 110S continues. For this purpose, the upper supply line 132 and the lower supply line 134 are both closed.

[0083] Furthermore, the pumping operation is performed in the first line 143 or the second line 144. The pumping speed of the first line 143 and the pumping speed of the second line 144 may be different from each other.

[0084] The following describes the case where the exhaust operation between the third process times T2 and T3 is performed by the second line 144. When exhausting the processing fluid from the substrate processing region 110S, the exhaust performed between the times T2 and T3 is performed at a first exhaust speed to prevent the supercritical state of the processing fluid from being suddenly released around the substrate W. Here, the first exhaust speed, which prevents the supercritical state from being suddenly released, is a slow vent that is slower than the second exhaust speed. This is to prevent reactants remaining on the top of the substrate W from falling back onto the substrate W due to the release of the supercritical state.

[0085] After time T3, the processing fluid may be exhausted from the upper periphery of the substrate W. Therefore, rapid exhaust is performed to shorten the process time. At this time, the pressure may be below the critical pressure P2.

[0086] 7, 8 and 9, (S140) the processing fluid is exhausted from the substrate processing region 110S through the auxiliary line 145 between the time T3 and the time T4, which are the fourth process time.

[0087] For example, the auxiliary line 145 is opened at a pressure below the critical pressure P2 between times T3 and T4 to perform a pumping operation. As mentioned above, the auxiliary line 145 does not have a metering valve, orifice, or check valve that creates flow resistance, so the pumping speed is faster than the first pumping speed. That is, the auxiliary line 145 pumps the process fluid at a second pumping speed that is faster than the maximum pumping speed of the first line 143. The second pumping speed may be a fast vent that is faster than the first speed.

[0088] On the other hand, referring to FIG. 10, in the substrate processing apparatus of the comparative example, the processing fluid is exhausted through a piping having a resistance flow path at the time when supercritical drying is completed, and the differential pressure with the exhaust manifold decreases during the exhaust process, resulting in a longer process time and delay.

[0089] When the substrate processing is completed in this manner, the processed substrate W is unloaded by using the transport robot 32RB within the substrate processing region 110S.

[0090] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will understand that the present invention can be embodied in other specific forms without changing the technical spirit or essential features thereof. Therefore, it should be understood that the above-described embodiment is illustrative in all respects and is not limiting. [Explanation of symbols]

[0091] 1,100 substrate processing equipment 110 Vessel section 120 Substrate support unit

Claims

1. a vessel portion in which a substrate processing region is formed, the vessel portion including a supply port through which a processing fluid is supplied to the substrate processing region and an exhaust port through which the processing fluid is exhausted from the substrate processing region; a fluid supply unit for supplying the processing fluid to the substrate processing region; an exhaust unit that exhausts the treatment fluid from the vessel portion, The exhaust unit is a main line connected to the exhaust port; an extension line branching from at least one of the first node and the second node of the main line and including at least one of a first orifice and a first check valve to adjust the exhaust speed; an auxiliary line branching from the third node of the main line and having no orifice or check valve; During a first process time, the processing fluid is discharged through the extension line, and the processing fluid is not discharged through the auxiliary line; Discharging the processing fluid through the auxiliary line for a second process time after the first process time; The extension line is connected to the first tank, The substrate processing apparatus, wherein the auxiliary line is connected to a second tank that is physically separated from the first tank.

2. The substrate processing apparatus of claim 1 , further comprising not discharging the processing fluid through the extension line during the second process time.

3. the extension line is provided in a chamber member in which the vessel portion is provided and in a control box disposed adjacent to the chamber member, The substrate processing apparatus of claim 1 , wherein the first orifice or the first check valve is provided in the control box.

4. the auxiliary line is provided in the chamber member and the control box; The substrate processing apparatus according to claim 3 , wherein the auxiliary line in the chamber member is provided with a valve that closes the flow path when the power is on and opens the flow path when the power is off.

5. The substrate processing apparatus of claim 3 , wherein the first node, the second node, and the third node are formed within the chamber member.

6. The extension line is a first line branching from the first node, including the first orifice or the first check valve, for adjusting the exhaust speed, and for opening the flow path during a first sub-step time of the first step time; a second line branching from the second node, including at least one of a second orifice and a second check valve, for adjusting an exhaust speed, and the flow path being open during a second sub-process time of the first process time.

7. The substrate processing apparatus of claim 6 , wherein the second orifice or the second check valve is provided in the control box.

8. the first line exhausts the processing fluid in an amount in the same range as the amount of the processing fluid supplied by the fluid supply unit so as to maintain the internal pressure of the substrate processing region; the second line exhausts the processing fluid from the substrate processing region at a first exhaust speed while the supply of the processing fluid from the fluid supply unit is interrupted; 7. The substrate processing apparatus of claim 6, wherein the auxiliary line is opened at a pressure equal to or lower than a critical pressure and exhausts the processing fluid at a second pumping speed that is faster than the first pumping speed and faster than a maximum pumping speed of the extension line.

9. The substrate processing apparatus of claim 1 , wherein the second process time follows the first process time.

10. The substrate processing apparatus according to claim 1 , wherein the extension line is provided with a valve that closes the flow path when the power is OFF and opens the flow path when the power is ON.

11. The treatment fluid is CO in a supercritical state. ２ is provided in The substrate processing apparatus according to claim 1 , wherein the substrate is provided as a substrate on which a liquid film is treated with an organic solvent, and supercritical drying is performed in the substrate processing region.

12. a vessel portion in which a substrate processing region is formed, the vessel portion including a supply port through which a processing fluid is supplied to the substrate processing region and an exhaust port through which the processing fluid is exhausted from the substrate processing region; a fluid supply unit for supplying the processing fluid to the substrate processing region; an exhaust unit including: a main line that exhausts the processing fluid from the vessel portion and is connected to the exhaust port; an extension line that branches off from at least one of a first node and a second node of the main line; and an auxiliary line that branches off from a third node of the main line; a first tank to which the extension line is connected; a second tank physically separated from the first tank and connected to the auxiliary line; During a first process time, the processing fluid is discharged through the extension line, and the processing fluid is not discharged through the auxiliary line; The substrate processing apparatus further comprises discharging the processing fluid through the auxiliary line during a second process time after the first process time.

13. 13. The substrate processing apparatus of claim 12, wherein the extension lines include a first line branching from the first node and discharging the processing fluid for a first sub-process time of the first process time, and a second line branching from the second node and discharging the processing fluid for a second sub-process time of the first process time.

14. the extension line includes at least one of an orifice and a check valve to adjust the exhaust speed; The substrate processing apparatus of claim 12 , wherein the auxiliary line does not include the orifice and the check valve.

15. The treatment fluid is CO in a supercritical state. ２ is provided in The substrate processing apparatus according to claim 12 , wherein the substrate is provided as a substrate on which a liquid film has been treated with an organic solvent, and supercritical drying is performed in the substrate processing region.

16. a chamber member in which an accommodation space is formed; a control box provided adjacent to the chamber member; A substrate processing region is formed in the accommodation space, and a substrate having a liquid film treated with an organic solvent is processed. The substrate processing region is provided with supercritical CO, which is a supercritical fluid. ２ a vessel portion including a supply port through which the supercritical fluid is supplied and an exhaust port through which the supercritical fluid is exhausted from the substrate processing region; a fluid supply unit that supplies the supercritical fluid to the substrate processing region; an exhaust unit that exhausts the supercritical fluid from the vessel portion, The exhaust unit is a main line connected to the exhaust port; a first line branching from a first node of the main line and including at least one of a first orifice and a first check valve located inside the control box, for adjusting an exhaust speed; a second line branching from a second node of the main line and including at least one of a second orifice and a second check valve located inside the control box, for adjusting an exhaust speed; an auxiliary line branching from the third node of the main line within the chamber member, the auxiliary line having no orifice or check valve; a first tank to which the first line and the second line are connected; a second tank physically separated from the first tank and connected to the auxiliary line; a first valve provided in the first line and a second valve provided in the second line close a flow path when the power is OFF and open a flow path when the power is ON; a third valve provided in the auxiliary line closes the flow path when the power is on and opens the flow path when the power is off; Discharging the supercritical fluid through the first line for a first process time; Discharging the supercritical fluid through the second line for a second process time subsequent to the first process time; The supercritical fluid is not discharged through the auxiliary line during the first process time and the second process time; During a third process time, the supercritical fluid is discharged through the auxiliary line, the auxiliary line is opened at a pressure below the critical pressure, and the supercritical fluid is discharged at a pumping speed faster than the maximum pumping speeds of the first line and the second line.

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