Resin composition for semiconductor manufacturing processes

Abstract

To provide a new resin film which enables formation of a film for a semiconductor manufacturing process that is excellent in UV transmittance.SOLUTION: A resin composition for a semiconductor manufacturing process contains (A) polyaryletherketone and (B) a resin other than (A) the polyaryletherketone, and has a UV transmittance of 25% or more at the wavelength of 400 nm.SELECTED DRAWING: None

Description

[Technical Field]

[0001] This invention relates to a composition and a film that can be used in the process of manufacturing semiconductors. [Background technology]

[0002] A typical method for manufacturing semiconductor devices includes a grinding step to adjust the thickness of the wafer and a cutting step to cut the wafer along division lines to obtain individual dies. The grinding step is performed from the wafer surface where the device region is formed, i.e., the side opposite the element formation surface, i.e., the back side of the wafer. In this process, for example, a protective film is applied to the wafer surface before processing to protect the devices formed on the wafer from cracks, deformation and / or fragments, and contamination from wafer grinding water or wafer cutting water.

[0003] Furthermore, during the encapsulation molding process, which forms the encapsulation layer for manufacturing semiconductor packages, a protective film may be applied to the back surface of the lead frame to prevent the encapsulation material from seeping into the back surface opposite the semiconductor element.

[0004] One method involves irradiating a semiconductor with UV light of a specific wavelength while a protective film is temporarily applied, which generates gas from the adhesive and improves the peelability of the protective film.

[0005] As described above, tapes and films are used in semiconductor manufacturing processes to protect wafers or devices. In this invention, such tapes and films are collectively referred to as "films for semiconductor manufacturing processes."

[0006] Regarding films for semiconductor manufacturing processes of this type, for example, Patent Document 1 discloses a flip-chip type semiconductor back surface film disposed on the back surface of a semiconductor element that is flip-chip connected on an adherend, comprising an adhesive layer and a protective layer laminated on the adhesive layer, wherein the protective layer is formed from a heat-resistant resin which is at least one selected from the group consisting of polyimide, polyphenylsulfone, polysulfone, polyetherimide, polyetherketone, and polyetheretherketone.

[0007] Regarding films for semiconductor manufacturing processes of this type, for example, Patent Document 1 discloses an adhesive tape for attaching to a semiconductor wafer to create a laminate, which has an adhesive layer and a substrate made of special polyester, polyetheretherketone, polyamide, or polyimide.

[0008] Furthermore, Patent Document 2 presents a film and substrate material consisting of polyetheretherketone and swellable mica, which exhibits excellent dimensional stability under high temperature and high humidity conditions. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Publication No. 2018-207011 [Patent Document 2] Japanese Patent Publication No. 2004-323797 [Overview of the Initiative] [Problems that the invention aims to solve]

[0010] When the semiconductor manufacturing process film is made of polyetheretherketone (PEEK), its high coefficient of thermal expansion can cause problems when heating and cooling are repeated. For example, when a semiconductor wafer and a glass substrate are bonded together via the film and the wafer is polished, the film may peel off the glass or the film may have poor dimensional stability. Furthermore, when fillers such as mica are added to improve dimensional stability, the toughness decreases, leading to problems such as increased breakage when the protective tape is removed.

[0011] Therefore, the present invention relates to a resin film for semiconductor manufacturing processes and aims to provide a new resin film that can form a semiconductor manufacturing process film with excellent UV transmittance. [Means for solving the problem]

[0012] The present invention provides a resin composition for semiconductor manufacturing processes, comprising a polyaryletherketone and a resin other than the polyaryletherketone, and having a UV transmittance of 25% or more at a wavelength of 400 nm, and a resin film for semiconductor manufacturing processes using the resin composition. That is, the present invention provides the following [1] to

[19] .

[0013] [1] A resin composition for semiconductor manufacturing processes comprising (A) a polyaryl ether ketone and (B) a resin other than the (A) polyaryl ether ketone, wherein the UV transmittance at a wavelength of 400 nm is 25% or more. [2] The resin composition for semiconductor manufacturing processes according to [1] above, further comprising (C) a filler. [3] The semiconductor manufacturing process resin composition according to [1] or [2] above, wherein the mass ratio of (A) polyaryletherketone to (B) resin other than (A) polyaryletherketone is 90:10 to 10:90. [4] The semiconductor manufacturing process resin composition according to [2] or [3] above, wherein the content of (C) filler is 1 to 50 parts by mass with respect to 100 parts by mass of the total mass of (A) and (B). [5] A resin composition for semiconductor manufacturing processes according to any one of the above [1] to [4], wherein the resin other than the (B)(A) polyaryletherketone has a glass transition temperature of 180°C or higher. [6] The resin composition for semiconductor manufacturing processes according to any one of the above [1] to [5], wherein the resin other than the (B)(A) polyaryletherketone is an amorphous resin. [7] The resin composition for semiconductor manufacturing processes according to [6] above, wherein the amorphous resin is a polyethersulfone. [8] The resin composition for semiconductor manufacturing processes according to [6] above, wherein the amorphous resin is polyphenylsulfone. [9] The resin composition for semiconductor manufacturing processes according to [6] above, wherein the amorphous resin is polysulfone.

[10] The resin composition for semiconductor manufacturing processes according to any one of the above [1] to [9], wherein the polyaryl ether ketone is a polyether ether ketone.

[11] The resin composition for semiconductor manufacturing processes according to any one of the above [2] to

[10] , wherein the filler is a flake-shaped filler, a plate-shaped filler, a thin flake-shaped filler, or a mixture of two or more of these as the main component filler.

[12] The filler is a resin composition for semiconductor manufacturing processes according to any one of the above items [2] to

[11] , wherein the average aspect ratio is 10 or more.

[13] The filler is a resin composition for semiconductor manufacturing processes according to any one of the above [2] to

[12] , wherein the average maximum diameter is 30 μm or less.

[14] The filler is a resin composition for semiconductor manufacturing processes according to any one of the above [2] to

[13] , wherein the average thickness is 1 μm or less.

[15] The resin composition for semiconductor manufacturing processes according to any one of the above [2] to

[14] , wherein the filler is mainly composed of mica.

[16] A resin composition for semiconductor manufacturing processes according to any one of the above [1] to

[15] , wherein the coefficient of linear expansion is 90 ppm / °C or less.

[17] A film for semiconductor manufacturing processes comprising the resin composition described in any one of the above items [1] to

[16] .

[18] The film for semiconductor manufacturing processes according to

[17] above, having a relative crystallinity of 60% or more.

[19] The film for semiconductor manufacturing processes according to

[17] or

[18] above, which is for wafer polishing. [Advantages of the Invention]

[0014] According to the resin composition for semiconductor manufacturing processes proposed by the present invention, a film with high UV transmittance while maintaining heat resistance can be formed. For example, by irradiating UV through the film to the adhesive in contact with the film after the manufacturing process, gas can be generated from the adhesive, and the peelability can be improved. [Modes for Carrying Out the Invention]

[0015] Next, an example of an embodiment of the present invention will be described. However, the present invention is not limited to the embodiments described below.

[0016] [Resin Composition for Semiconductor Manufacturing Processes] The resin composition for semiconductor manufacturing processes of the present invention (hereinafter sometimes referred to as "this resin composition") contains (A) polyaryl ether ketone and (B) a resin other than the (A) polyaryl ether ketone, and is a resin composition for semiconductor manufacturing processes having a UV transmittance of 25% or more at a wavelength of 400 nm. Such a resin composition for semiconductor manufacturing processes has good balance in UV transmittance, coefficient of linear expansion, heat resistance, toughness, etc., and can be preferably used, for example, as a protective film during semiconductor manufacturing processes.

[0017] (UV Transmittance) This resin composition has a UV transmittance of 25% or more at 400 nm, preferably 30% or more, more preferably 35% or more, and still more preferably 40% or more. Since the UV transmittance is 25% or more, UV can be irradiated through this film to the adhesive in contact with the film made of this resin composition after the semiconductor manufacturing process, gas can be generated from the adhesive, and the peelability can be improved. Furthermore, the resin composition preferably has a UV transmittance of 35% or more at 450 nm, more preferably 40% or more, even more preferably 45% or more, and particularly preferably 50% or more. Because the UV transmittance at 450 nm is 35% or more, UV light can be irradiated through the film to the adhesive that comes into contact with the film made of the resin composition after the semiconductor manufacturing process, generating gas from the adhesive and improving its peelability. Here, the UV transmittance of this resin composition refers to the UV transmittance obtained for a 50 μm thick film made from this resin composition.

[0018] <(A) Polyaryl ether ketone> The (A) polyaryletherketone used in the present invention is a homopolymer or copolymer containing monomer units comprising one or more aryl groups, one or more ether groups, and one or more ketone groups. Examples include polyether ether ketone (PEEK), polyether ketone ketone (PEKK), polyether ketone (PEK), polyether ketone ether ketone ketone (PEKEKK), polyether ether ketone ketone (PEEKK), polyether diphenyl ether ketone (PEDEK), and copolymers thereof (e.g., PEEK-PEDEK copolymer). Among these, polyether ether ketone (PEEK) is particularly preferred due to its excellent heat resistance, mechanical properties, and chemical resistance.

[0019] (Crystal melting temperature) From the viewpoint of heat resistance, the crystal melting temperature (Tm) of polyaryletherketone is preferably 320°C or higher, more preferably 325°C or higher, more preferably 330°C or higher, and particularly preferably 335°C or higher. On the other hand, from the viewpoint of film-forming properties and processability, it is preferably 360°C or lower, more preferably 355°C or lower, more preferably 350°C or lower, and particularly preferably 345°C or lower.

[0020] <(B) Resins other than polyaryletherketones> Component (B) used in the present invention is a resin other than polyaryl ether ketone, and when mixed with polyaryl ether ketone, it is a resin that achieves a UV transmittance of 25% or more at a wavelength of 400 nm. From the viewpoint of improving the UV transmittance of this resin composition, component (B) is preferably an amorphous resin. Furthermore, from the viewpoint of improving the heat resistance of this resin composition, it is preferable that this amorphous resin has a glass transition temperature of 180°C or higher. From the viewpoint of heat resistance, the glass transition temperature (Tg) of amorphous resin is preferably 185°C or higher, more preferably 190°C or higher, even more preferably 200°C or higher, and particularly preferably 210°C or higher. On the other hand, from the viewpoint of film-forming ability and processability, it is preferably 270°C or lower, even more preferably 260°C or lower, even more preferably 250°C or lower, and particularly preferably 240°C or lower. Examples of resins other than component (A) polyaryletherketone used in the present invention include polyphenylsulfone (PPSU), polyethersulfone (PES), polysulfone (PSU), polyarylate (PAR), amorphous polyamide, etc. Among these, polyphenylsulfone (PPSU), polyethersulfone (PES), and polysulfone (PSU) are preferred because they have excellent mechanical properties, UV transmittance, and dispersibility in PEEK.

[0021] (The ratio of component (A) to component (B)) In the resin composition for semiconductor manufacturing processes of the present invention, it is preferable that the ratio of (A) polyaryletherketone to (B) resin other than (A) polyaryletherketone is 90:10 to 10:90 by mass ratio. Regarding the upper limit of component (A) in the mass ratio ratio of resins of component (A) and component (B), it is preferable that (A):(B) = 80:20, more preferably (A):(B) = 70:30, and particularly preferable (A):(B) = 60:40. On the other hand, regarding the lower limit of component (A) in the mass ratio ratio of resins of component (A) and component (B), it is preferable that (A):(B) = 20:80, more preferably (A):(B) = 30:70, more preferably (A):(B) = 40:60, and particularly preferable (A):(B) = 50:50. Within the above range, it becomes easier to achieve a good balance of various properties such as UV transmittance, coefficient of thermal expansion, and heat resistance.

[0022] <Polyetheretherketone (PEEK)> As mentioned above, polyether ether ketone (PEEK) is the most preferred polyaryl ether ketone, which is component (A) in the present invention. PEEK will be described in detail below. The polyether ether ketone may be any resin having at least two ether groups and ketone groups as structural units. In particular, it is preferable to have repeating units represented by the following structural formula (1) because of its excellent thermal stability, melt moldability, rigidity, chemical resistance, impact resistance, and durability.

[0023] (Structural formula (1)) [ka]

[0024] In the above structural formula (1), Ar 1 ~Ar 3 The arylene groups may be different from each other, but it is preferable that they be the same. 1 ~Ar 3Examples of the arylene group include a phenylene group and a biphenylene group. Among these, a phenylene group is preferred, and a p-phenylene group is more preferred.

[0025] The aforementioned Ar 1 ~Ar 3 Examples of substituents that the arylene group may have include alkyl groups having 1 to 20 carbon atoms, such as methyl and ethyl groups, and alkoxy groups having 1 to 20 carbon atoms, such as methoxy and ethoxy groups. 1 ~Ar 3 If the compound has substituents, there is no particular limit on the number of substituents.

[0026] In particular, polyether ether ketones having repeating units represented by the following structural formula (2) are preferred from the viewpoint of thermal stability, melt moldability, rigidity, chemical resistance, impact resistance, and durability.

[0027] (Structural formula (2)) [ka]

[0028] (molecular weight distribution) The molecular weight distribution of the polyether ether ketone is preferably 3.3 or higher, more preferably 3.5 or higher, even more preferably 3.6 or higher, particularly preferably 3.8 or higher, and most preferably 4 or higher. If the molecular weight distribution is above the lower limit, it contains a sufficient amount of low molecular weight components, which can increase the degree of crystallinity and crystallization rate, and consequently tends to lead to improvements in heat resistance, rigidity, and productivity. On the other hand, the molecular weight distribution of the polyether ether ketone is preferably 8 or less, more preferably 7 or less, even more preferably 6.5 or less, particularly preferably 6 or less, and most preferably 5.5 or less. If the upper limit of the molecular weight distribution of the polyether ether ketone is below the above values, the proportion of high molecular weight components and low molecular weight components is not too high, and the balance between crystallinity, fluidity, and mechanical properties tends to be excellent. The molecular weight distribution is calculated by dividing the mass-average molecular weight by the number-average molecular weight.

[0029] (mass average molecular weight) The mass-average molecular weight of the polyether ether ketone is preferably 150,000 or less, more preferably 130,000 or less, even more preferably 120,000 or less, and particularly preferably 110,000 or less. If the mass-average molecular weight of the polyether ether ketone is below the above values, it tends to exhibit excellent crystallinity, crystallization rate, and fluidity during melt molding. On the other hand, the mass-average molecular weight is preferably 10,000 or more, more preferably 30,000 or more, even more preferably 40,000 or more, particularly preferably 50,000 or more, and most preferably 60,000 or more. If the mass-average molecular weight is equal to or greater than the above values, the material tends to have superior mechanical properties such as durability and impact resistance.

[0030] The mass-average molecular weight and number-average molecular weight in this invention are obtained by measuring them using gel permeation chromatography.

[0031] (Heat of fusion of crystals) The heat of fusion of polyetheretherketone is preferably 32 J / g or more, more preferably 34 J / g or more, even more preferably 36 J / g or more, particularly preferably 38 J / g or more, and most preferably 40 J / g or more. If the heat of fusion of polyetheretherketone is above the above lower limit, the film obtained from this resin composition will have sufficient crystallinity and will tend to have excellent heat resistance and rigidity. On the other hand, the heat of fusion of polyetheretherketone is preferably 60 J / g or less, more preferably 58 J / g or less, even more preferably 56 J / g or less, and particularly preferably 54 J / g or less. If the heat of fusion of polyetheretherketone is below the above upper limit, the degree of crystallinity is not too high, which tends to result in excellent melt moldability when molding the resin, and the resulting film tends to have excellent durability and impact resistance.

[0032] In this invention, the heat of fusion of the crystal can be determined from the area of ​​the melting peak in the DSC curve detected when the temperature is raised from 23 to 400°C at a rate of 10°C / min using a differential scanning calorimeter (for example, PerkinElmer Pyris1 DSC) in accordance with JIS K7122:2012, then cooled to 23°C at a rate of 10°C / min, and then raised again to 400°C at a rate of 10°C / min.

[0033] (crystallization temperature) The crystallization temperature (Tc) of polyetheretherketone during the cooling process is preferably 280°C or higher, more preferably 285°C or higher, even more preferably 287°C or higher, particularly preferably 290°C or higher, and most preferably 292°C or higher. If the crystallization temperature of polyetheretherketone during the cooling process is above the above temperature, the crystallization rate is high, and the productivity when forming films obtained from this resin composition tends to be excellent. Specifically, for example, when producing a film, by setting the temperature of the cast roll (cooling temperature) to a temperature above the glass transition temperature and below the crystal melting temperature, crystallization is promoted while the resin is in contact with the cast roll, and a crystallized film is obtained. Furthermore, if the crystallization temperature during the cooling process is above the above temperature, the crystallization rate is high, and crystallization can be completed on the cast roll, resulting in a higher elastic modulus, which in turn suppresses adhesion to the roll and tends to improve the appearance of the film.

[0034] On the other hand, the crystallization temperature during the cooling process is preferably 320°C or lower, more preferably 315°C or lower, even more preferably 312°C or lower, and particularly preferably 310°C or lower. If the crystallization temperature of polyetheretherketone during the cooling process is below the above temperature, crystallization does not proceed too quickly, resulting in less uneven cooling when producing molded products such as films. This makes it easier to obtain high-quality molded products that are uniformly crystallized and have excellent heating dimensional stability.

[0035] In this invention, the crystallization temperature during the cooling process can be determined from the peak top temperature of the crystallization peak in the DSC curve detected when the temperature is raised from 23 to 400°C at a rate of 10°C / min using a differential scanning calorimeter (e.g., PerkinElmer Pyris1 DSC) in accordance with JIS K7121:2012, then cooled to 23°C at a rate of 10°C / min, and then raised again to 400°C at a rate of 10°C / min.

[0036] The glass transition temperature in this invention can be determined from the DSC curve detected when the temperature is increased at a rate of 10°C / min from 23 to 380°C in the temperature range of 23 to 380°C using a differential scanning calorimeter (for example, a Pyris1 DSC manufactured by PerkinElmer), then decreased at a rate of 10°C / min to 23°C, and then increased again at a rate of 10°C / min to 380°C, in accordance with JIS K7121:2012.

[0037] Next, as the resin other than (A) polyaryl ether ketone, which is component (B) in the present invention, polyphenyl sulfone (PPSU), polyether sulfone (PES), and polysulfone (PSU) are particularly preferred, as described above. PPSU, PES, and PSU will be described in detail below.

[0038] <ppsu> PPSU (polyphenylsulfone) has repeating units represented by the following formula (a-1).

[0039] [ka]

[0040] The total number of repeating units (a-1) of polyphenylsulfone (degree of polymerization) is preferably 10 or more, more preferably 20 or more. On the other hand, it is preferably 500 or less, more preferably 300 or less, even more preferably 100 or less, and particularly preferably 80 or less. If the total number of repeating units (a-1) of polyphenylsulfone (degree of polymerization) is within this range, the resin film of the present invention will have excellent heat resistance and impact resistance, and will also have excellent melt moldability because its viscosity during melting is not too high.

[0041] The polyphenylsulfone may contain repeating units other than repeating unit (a-1), but from the viewpoint of more reliably obtaining the effects of the present invention by using polyphenylsulfone, it is preferable that the repeating units other than repeating unit (a-1) in the polyphenylsulfone are 40 mol% or less, more preferably 30 mol% or less, and particularly 0 to 20 mol% of the total repeating units.

[0042] (Glass transition temperature (Tg)) The glass transition temperature of polyphenylsulfone is preferably 180°C or higher, more preferably 190°C or higher, even more preferably 200°C or higher, and particularly preferably 210°C or higher. On the other hand, the glass transition temperature is preferably 300°C or lower, more preferably 280°C or lower, even more preferably 260°C or lower, particularly preferably 250°C or lower, and especially preferably 240°C or lower. Within the range of the glass transition temperature of polyphenylsulfone, the resin film of the present invention exhibits excellent heat resistance and, because its viscosity during melting is not too high, tends to have excellent melt-molding properties.

[0043] (Heat of fusion of crystals) The heat of fusion of polyphenylsulfone is preferably 10 J / g or less, more preferably 5 J / g or less, and even more preferably 0 J / g, i.e., substantially amorphous. If the heat of fusion is 10 J / g or less, crystallization of the resin film of the present invention is suppressed, which tends to suppress molding shrinkage and deterioration of transparency due to crystallization.

[0044] The glass transition temperature in this invention can be determined from the DSC curve detected when the temperature is increased at a rate of 10°C / min from 23 to 380°C in the temperature range of 23 to 380°C using a differential scanning calorimeter (for example, a Pyris1 DSC manufactured by PerkinElmer), then decreased at a rate of 10°C / min to 23°C, and then increased again at a rate of 10°C / min to 380°C, in accordance with JIS K7121:2012. Furthermore, the heat of fusion of the crystal is determined from the DSC (Differential scanning calorimetry) curve detected when the temperature is increased using a differential scanning calorimeter in the temperature range of 0 to 380°C at a heating rate of 10°C / min, in accordance with JIS K7122:2012. The same applies below.

[0045] For example, polybiphenyl ethersulfone, which is preferably used as polyphenylsulfone, can be produced by known manufacturing methods (see, for example, U.S. Patent No. 4008203, U.S. Patent No. 4108837, U.S. Patent No. 4175175, etc.). Furthermore, commercially available products can also be used as polybiphenyl ethersulfone. Examples of commercially available polybiphenyl ethersulfones include, for example, the "Radel" series from Solvay, the "Ultrason P" series from BASF, the "P" series from Shandong Haoran Plastics Co., Ltd., and the "PARYLS" series from UJU.

[0046] Polyphenylsulfone may be used alone or in combination of two or more types.

[0047] <pes> PES (polyethersulfone) has repeating units represented by the following formula (a-2).

[0048] [ka]

[0049] The total number of repeating units (a-2) of polyethersulfone (degree of polymerization) is preferably 10 or more, and more preferably 20 or more. On the other hand, it is preferably 500 or less, more preferably 300 or less, even more preferably 100 or less, and particularly preferably 80 or less. If the total number of repeating units (a-2) of polyethersulfone (degree of polymerization) is within this range, the resin film of the present invention will have excellent heat resistance and impact resistance, and will also have excellent melt moldability because its viscosity during melting is not too high.

[0050] The polyethersulfone may contain repeating units other than repeating unit (a-2), but from the viewpoint of more reliably obtaining the effects of the present invention by using polyethersulfone, it is preferable that the repeating units other than repeating unit (a-2) in the polyethersulfone are 40 mol% or less, more preferably 30 mol% or less, and particularly 0 to 20 mol% of the total repeating units.

[0051] (Glass transition temperature (Tg)) The glass transition temperature of the polyethersulfone is preferably 180°C or higher, more preferably 190°C or higher, even more preferably 200°C or higher, and particularly preferably 210°C or higher. On the other hand, the glass transition temperature is preferably 300°C or lower, more preferably 280°C or lower, even more preferably 260°C or lower, particularly preferably 250°C or lower, and especially preferably 240°C or lower. Within the range of the glass transition temperature of polyethersulfone, the resin film of the present invention exhibits excellent heat resistance and, because its viscosity during melting is not too high, tends to have excellent melt-molding properties.

[0052] (Heat of fusion of crystals) The heat of fusion of polyethersulfone is preferably 10 J / g or less, more preferably 5 J / g or less, and even more preferably 0 J / g, i.e., substantially amorphous. If the heat of fusion is 10 J / g or less, crystallization of the resin film of the present invention is suppressed, which tends to suppress molding shrinkage and deterioration of transparency due to crystallization.

[0053] In this invention, the glass transition temperature can be determined from the DSC curve detected when the temperature is increased at a rate of 10°C / min from 23 to 380°C in the temperature range of 23 to 380°C using a differential scanning calorimeter (e.g., PerkinElmer Pyris1 DSC), in accordance with JIS K7121:2012, then decreased to 23°C at a rate of 10°C / min, and then increased again to 380°C at a rate of 10°C / min. The heat of fusion of the crystal can also be determined from the DSC (Differential scanning calorimetry) curve detected when the temperature is increased at a rate of 10°C / min in the temperature range of 0 to 380°C using a differential scanning calorimeter, in accordance with JIS K7122:2012. The same applies below.

[0054] <psu> PSU (polysulfone) has repeating units represented by the following formula (a-3).

[0055] [ka]

[0056] The total number of repeating units (a-3) of polysulfone (degree of polymerization) is preferably 10 or more, and more preferably 20 or more. On the other hand, it is preferably 500 or less, more preferably 300 or less, even more preferably 100 or less, and particularly preferably 80 or less. If the total number of repeating units (a-3) of polysulfone (degree of polymerization) is within this range, the resin film of the present invention will have excellent heat resistance and impact resistance, and will also have excellent melt moldability because its viscosity during melting is not too high.

[0057] The polysulfone may contain repeating units other than repeating unit (a-3), but from the viewpoint of more reliably obtaining the effects of the present invention by using polysulfone, it is preferable that the repeating units other than repeating unit (a-3) in the polyphenylsulfone be 40 mol% or less, more preferably 30 mol% or less, and particularly 0 to 20 mol% of the total repeating units.

[0058] (Glass transition temperature (Tg)) The glass transition temperature of the polysulfone is preferably 180°C or higher, more preferably 190°C or higher, even more preferably 200°C or higher, and particularly preferably 210°C or higher. On the other hand, the glass transition temperature is preferably 300°C or lower, more preferably 280°C or lower, even more preferably 260°C or lower, particularly preferably 250°C or lower, and especially preferably 240°C or lower. Within the range of the glass transition temperature of polysulfone, the resin film of the present invention exhibits excellent heat resistance and, because its viscosity during melting is not too high, tends to have excellent melt-molding properties.

[0059] (Heat of fusion of crystals) The heat of fusion of polyphenylsulfone is preferably 10 J / g or less, more preferably 5 J / g or less, and even more preferably 0 J / g, i.e., substantially amorphous. If the heat of fusion is 10 J / g or less, crystallization of the resin film of the present invention is suppressed, which tends to suppress molding shrinkage and deterioration of transparency due to crystallization.

[0060] The glass transition temperature in this invention can be determined from the DSC curve detected when the temperature is increased at a rate of 10°C / min from 23 to 380°C in the temperature range of 23 to 380°C using a differential scanning calorimeter (for example, a Pyris1 DSC manufactured by PerkinElmer), then decreased at a rate of 10°C / min to 23°C, and then increased again at a rate of 10°C / min to 380°C, in accordance with JIS K7121:2012. Furthermore, the heat of fusion of the crystal is determined from the DSC (Differential scanning calorimetry) curve detected when the temperature is increased using a differential scanning calorimeter in the temperature range of 0 to 380°C at a heating rate of 10°C / min, in accordance with JIS K7122:2012. The same applies below.

[0061] <Filling material> The resin composition for semiconductor manufacturing processes of the present invention preferably includes (C) a filler in addition to the above components (A) and (B). The addition of (C) a filler can reduce the coefficient of thermal expansion. There are no particular limitations on the filler material; it may be an organic filler or an inorganic filler. Examples of the aforementioned fillers include inorganic fillers such as clay, glass, alumina, silica, aluminum nitride, and silicon nitride; fibers such as glass fibers, aramid fibers, carbon fibers, and potassium titanate fibers; flake-like, plate-like, or thin-leaf-like materials; preferably inorganic flake-like, plate-like, or thin-leaf-like powders, such as (synthetic) mica, natural mica, boehmite, talc, sericite, illite, kaolinite, montmorillonite, vermiculite, smectite, plate-like alumina, and flake-like titanates (e.g., flake-like magnesium potassium titanate, flake-like lithium potassium titanate, etc.).

[0062] In particular, mica is preferred as the main component filler due to its excellent mechanical strength, heat resistance, film-forming properties, and low coefficient of thermal expansion. In this context, the main component filler refers to the filler that is present in the largest quantity among the types of fillers, preferably accounting for 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, even more preferably 80% by mass or more, particularly preferably 90% by mass or more, and most preferably 95% by mass or more (including 100% by mass) of the filler. The same applies to other main component fillers.

[0063] The filler is preferably a filler that has low anisotropy, can further suppress dimensional changes of molded products such as films, and has excellent film-forming properties, especially for thin films, and is mainly composed of a flake-shaped filler, a plate-shaped filler, a thin flake-shaped filler, or a mixture of two or more of these.

[0064] Therefore, as the main component filler, for example, flaky or thin mica, plate-shaped or thin-flaked titanium dioxide, potassium titanate, lithium titanate, boehmite, γ-alumina, and α-alumina are preferably used, and among these, flaky or thin-flaked mica is particularly preferred.

[0065] (Average aspect ratio) From the viewpoint of further suppressing dimensional changes in the film of the present invention, the average aspect ratio (average value of maximum diameter / thickness) of the filler material is preferably 10 or more, more preferably 20 or more, more preferably 25 or more, and particularly preferably 30 or more. On the other hand, from the viewpoint of anisotropy, it is preferably 100 or less, more preferably 80 or less, more preferably 60 or less, and particularly preferably 50 or less. The average aspect ratio of the filler material refers to the average of the aspect ratios of multiple filler particles, and can be calculated specifically from the measurement results of the maximum diameter and thickness of each filler particle, as described later.

[0066] (Average maximum diameter) From the viewpoint of film-forming properties and mechanical properties, the average maximum diameter of the filler is preferably 30 μm or less, more preferably 20 μm or less, more preferably 15 μm or less, and particularly preferably 10 μm or less. On the other hand, from the viewpoint of dimensional stability such as the coefficient of linear expansion, it is preferably 1 μm or more, more preferably 1.5 μm or more, more preferably 2 μm or more, particularly preferably 3 μm or more, and particularly preferably 3.5 μm or more. The average maximum diameter of the filler material refers to the average length of the longest observed portion of each filler particle when observed using an electron microscope such as a scanning electron microscope. Specifically, it can be determined by observing a cross-section perpendicular to the flow direction of the resin film, selecting 30 filler particles from the longest to the shortest, measuring the length of the longest observed portion, and averaging the results.

[0067] (Average thickness) From the viewpoint of film-forming properties, the average thickness of the filler is preferably 1 μm or less, more preferably 0.8 μm or less, more preferably 0.6 μm or less, and particularly preferably 0.4 μm or less. On the other hand, from the viewpoint of the strength of the filler, it is preferably 0.01 μm or more, more preferably 0.03 μm or more, more preferably 0.06 μm or more, particularly preferably 0.08 μm or more, and particularly preferably 0.1 μm or more. The average thickness of the filler material refers to the average length of the shortest observed portion of each filler particle when observed using an electron microscope such as a scanning electron microscope. Specifically, it can be determined by observing a cross-section perpendicular to the flow direction of the film obtained from this resin composition, selecting 30 filler particles arbitrarily, measuring the length of the shortest observed portion, and averaging the results.

[0068] (Surface treatment) The filler material may be surface-treated with a surface treatment agent such as a coupling agent. By surface treating with coupling agents or other surface treatment agents, mechanical strength and heat resistance can be further enhanced, reducing resin degradation and improving moldability. The surface treatment agent, such as a coupling agent, is not particularly limited, and general coupling agents such as silane-based, titanate-based, and aluminate-based agents can be used. Dry and wet surface treatment methods can be used for the surface treatment, with wet surface treatment methods being particularly preferable.

[0069] (Filler content) In this resin composition, the content of the filler (C) is preferably 1 part by mass or more, more preferably 5 parts by mass or more, more preferably 10 parts by mass or more, even more preferably 12 parts by mass or more, and particularly preferably 15 parts by mass or more, with respect to 100 parts by mass of the total mass of the polyaryletherketone (A) and the resin other than the polyaryletherketone (B), from the viewpoint of reducing the coefficient of linear expansion. On the other hand, from the viewpoint of toughness and film-forming properties, the content of the filler is preferably 50 parts by mass or less, more preferably 40 parts by mass or less, even more preferably 35 parts by mass or less, even more preferably 30 parts by mass or less, even more preferably 25 parts by mass or less, and particularly preferably 23 parts by mass or less.

[0070] <Other materials> This resin composition may also contain materials other than the resin and the filler. Examples of other materials include heat stabilizers, lubricants, release agents, pigments, dyes, UV absorbers, flame retardants, lubricants, fillers other than the aforementioned fillers, and general resin additives such as reinforcing agents. One or more of these may be included.

[0071] <Method for manufacturing semiconductor process films> The semiconductor manufacturing process film of the present invention is a film made of the above-described resin composition. This semiconductor manufacturing process film has a good balance of UV transmittance, coefficient of thermal expansion, heat resistance, toughness, etc., and can be suitably used, for example, as a protective film during semiconductor manufacturing processes. The semiconductor manufacturing process film of the present invention (hereinafter sometimes referred to as "this film") can be manufactured by known manufacturing methods. A specific example of the film manufacturing method is to dry blend the resin, filler, and other components added as needed, and then melt-knead them in a twin-screw kneader or the like. In melt mixing, the filler material can be supplied via a side feeder midway through the extruder, rather than being dry-blended. Alternatively, a method is also preferred in which a masterbatch containing resin and filler is prepared in advance, and the masterbatch is dry-blended with the remaining resin and other components added as needed, and then melt-kneaded in a twin-screw extruder or the like. However, the manufacturing method is not limited to this method. For mixing, single-screw extruders, cone kneaders, multi-screw extruders, etc., can be used. This allows for obtaining resin compositions in, for example, pellet form.

[0072] This film can be formed by general molding methods, such as extrusion molding, calendering, casting methods including solution casting, and inflation molding. Among these, extrusion molding, particularly the T-die method, is preferred.

[0073] This film may be either unstretched or stretched. An unstretched film refers to a film that is not actively stretched for the purpose of controlling the orientation of the film. This includes films that are oriented when the molten resin is pulled down or taken up by the cast roll in extrusion molding such as the T-die method, as well as films whose stretching ratio on the stretching roll is less than 2 times.

[0074] This film can be manufactured by melting, preferably by melt-kneading, the resin composition containing the aforementioned components (A) and (B), then extruding it and cooling it. Examples of extrusion molding machines include single-screw extruders and twin-screw extruders, which function to melt and knead the resin composition that is fed into them.

[0075] The melting temperature should preferably be adjusted as appropriate depending on the type of resin, the mixing ratio, and the presence and type of additives. From the viewpoint of productivity, it is preferable that the temperature be 320°C or higher, more preferably 340°C or higher, even more preferably 350°C or higher, and particularly preferably 360°C or higher. By setting the melting temperature above the aforementioned temperature, the crystals of raw materials such as pellets melt sufficiently and are less likely to remain in the film, thus improving durability such as the number of folds that can be withstood and puncture impact strength. On the other hand, the melting temperature is preferably 450°C or lower, more preferably 430°C or lower, even more preferably 410°C or lower, and particularly preferably 390°C or lower. By setting the melting temperature to one of the above temperatures or lower, the resin is less likely to decompose during melt molding and the molecular weight is more easily maintained, which tends to improve the heat resistance and tensile modulus of the film.

[0076] Subsequently, the melt-kneaded resin composition is extruded by a T-die to form a film. The T-die functions to continuously extrude a strip of film downwards. The extrusion temperature of this T-die is usually in the range of above the melting point of the resin but below the thermal decomposition temperature, and specifically, it is preferably 280°C or higher, more preferably 300°C or higher, even more preferably 320°C or higher, particularly preferably 340°C or higher, and most preferably 350°C or higher. On the other hand, the temperature of the T-die during extrusion is preferably 450°C or lower, more preferably 430°C or lower, even more preferably 410°C or lower, and particularly preferably 390°C or lower.

[0077] The resin composition extruded as a film by the aforementioned T-die is cooled by contacting it with a cooling device such as a pressure roll or casting roll. The crimping roll is rotatably supported below the T-die and clamps the cast roll in sliding contact. The cast roll, for example, is a metal roll with a larger diameter than the crimping roll and is rotatably supported below the T-die to clamp the extruded film between itself and the crimping roll, functioning to control the thickness of the film within a predetermined range while cooling it together with the crimping roll.

[0078] The cooling temperature (e.g., the temperature of the cast roll) can be appropriately selected to achieve the desired relative crystallinity, but it is preferably 30 to 150°C higher than the glass transition temperature of the resin, more preferably 35 to 140°C higher, and particularly preferably 40 to 135°C higher. Setting the cooling temperature within this range tends to slow down the cooling rate of the film and increase the relative crystallinity. For example, when the resin component contains polyetheretherketone, the cooling temperature is preferably 180°C or higher, more preferably 190°C or higher, even more preferably 200°C or higher, and particularly preferably 210°C or higher. On the other hand, the cooling temperature is preferably 300°C or lower, more preferably 280°C or lower, even more preferably 260°C or lower, particularly preferably 250°C or lower, and most preferably 240°C or lower.

[0079] Generally, the crystallization rate of polymer materials is thought to be maximized in the temperature range between the glass transition temperature and the crystal melting temperature, based on the balance between the crystal nucleation rate and growth rate. When producing films with a high relative crystallinity, the crystallization rate is maximized within the range where the lower and upper limits of the cooling temperature (temperature of the cast roll, etc.) apply, making it easier to obtain crystallized films with excellent productivity.

[0080] Furthermore, if the resin used is a mixture of multiple types of crystalline resins and has multiple glass transition temperatures, the highest temperature should be considered the glass transition temperature of the resin, and the cooling temperature should be adjusted accordingly.

[0081] Downstream of the cast roll, a heating roll for reheating the film, an oven such as a floating dryer, an infrared heater, etc., may be provided to adjust the relative degree of crystallinity.

[0082] Furthermore, if the film is a stretched film, a stretching device such as a uniaxial stretching device, a sequential biaxial stretching device, or a simultaneous biaxial stretching device is usually provided downstream of the cast roll.

[0083] <Characteristics of this film> This resin film has the following properties:

[0084] (UV transmittance) This film can have a thickness of, for example, 10 to 500 μm and a UV transmittance at 400 nm of 25% or more, preferably 30% or more, more preferably 35% or more, and even more preferably 40% or more. By setting the UV transmittance to 25% or more, UV light can be irradiated through this resin film to the adhesive that comes into contact with the film after the semiconductor manufacturing process, generating gas from the adhesive and improving its peelability. Furthermore, since the transmittance increases even further in the short-wavelength visible light region of approximately 400-420 nm, it is also effective when using adhesives that cure with short-wavelength visible light. This film can have a thickness of, for example, 10 to 500 μm and a UV transmittance of 35% or more at 450 nm, preferably 40% or more, more preferably 45% or more, and even more preferably 50% or more. By setting the UV transmittance to 35% or more, UV light can be irradiated through this resin film to the adhesive that comes into contact with the film after the semiconductor manufacturing process, generating gas from the adhesive and making it easier to improve peelability.

[0085] (Coefficient of linear expansion) This resin film can have a linear thermal expansion coefficient of 90 ppm / °C or less in the range of 10 to 500 μm in thickness, preferably 80 ppm / °C or less, preferably 70 ppm / °C or less, preferably 60 ppm / °C or less, more preferably 55 ppm / °C or less, even more preferably 50 ppm / °C or less, particularly preferably 45 ppm / °C or less, and especially preferably 40 ppm / °C or less. The coefficient of linear expansion is measured in the direction perpendicular to the resin flow direction (MD) of the film (TD), and can be measured by the method described in the examples below. The coefficient of linear thermal expansion can be adjusted to a desired range by appropriately selecting the proportion of filler in the composition, taking into consideration the type of resin and filler used as raw materials.

[0086] (Tensile elongation at fracture) When this resin film is an unstretched film with a thickness of 10 to 500 μm, its tensile elongation at break can be 1% or more, preferably 3% or more, more preferably 5% or more, even more preferably 7% or more, particularly preferably 10% or more, and especially preferably 13% or more. On the other hand, from the viewpoint of film processability, it can be preferably 300% or less, more preferably 280% or less, and even more preferably 250% or less. Because this resin film also has excellent toughness, it tends to be soft and easy to peel when used in semiconductor manufacturing processes, and also has excellent handling properties. The tensile elongation at break of the film is a value measured in the direction perpendicular to the resin flow direction (MD) of the film (TD), and can be measured by the method described in the examples below.

[0087] (Thickness of this film) From the viewpoint of handling, the thickness of this film is preferably 5 μm or more, more preferably 10 μm or more, and even more preferably 30 μm or more, of which 50 μm or more, and even more preferably 70 μm or more. On the other hand, from the viewpoint of productivity, it is preferably 500 μm or less, and even more preferably 400 μm or less, of which 300 μm or less, of which 200 μm or less, and even more preferably 150 μm or less.

[0088] (Relative crystallinity) This film can have a relative crystallinity of 60% or higher, and moreover, 70% or higher, 80% or higher, 85% or higher, and 90% or higher. The upper limit is usually 100%. If the relative crystallinity of this film is within the above numerical range, dimensional changes such as thermal shrinkage can be suppressed, and it can also have superior heat resistance and rigidity. The relative crystallinity of the film can be measured by the method described in the examples below.

[0089] To achieve the relative crystallinity of this film within the aforementioned range, for example, the selection of the resin used as a raw material and the conditions for extruding the film can be appropriately adjusted. Among these, the following methods (1) to (4) are preferred. These methods may be used in combination. Among these, method (1), which has low productivity and energy consumption, is preferred.

[0090] (1) Method for adjusting the cooling conditions when cooling molten resin to form a film. As will be explained in detail later in the manufacturing method of this film, cooling can be performed, for example, by using a cast roll as a cooler and bringing the extruded molten resin into contact with the cast roll, but it is preferable to adopt the following method.

[0091] One method is to set the cooling temperature to a temperature 30 to 150°C higher than the glass transition temperature of the raw resin. More preferably, the cooling temperature is 35 to 140°C higher than the glass transition temperature of the resin, and particularly preferably 40 to 135°C higher. By setting the cooling temperature within this range, the cooling rate of the film can be slowed down, and the relative crystallinity tends to be increased. In particular, when the resin contains polyetheretherketone as the main component, the cooling temperature is preferably 180°C or higher, more preferably 190°C or higher, even more preferably 200°C or higher, and particularly preferably 210°C or higher. On the other hand, the cooling temperature is preferably 300°C or lower, more preferably 280°C or lower, even more preferably 260°C or lower, particularly preferably 250°C or lower, and most preferably 240°C or lower.

[0092] (2) Method of reheating the film using a heating roll Specifically, one method is to heat the material using a roll separate from the cast rolls of a longitudinal stretcher or the like. The heating temperature is preferably within the same range as the cooling temperature described in (1) above.

[0093] (3) How to reheat the film in an oven Specifically, this method involves passing the film through drying equipment such as a floating dryer, tenter, or band dryer and heating it with hot air. The heating temperature is preferably within the same range as the cooling temperature described in (1) above.

[0094] (4) Method of reheating the film with infrared rays Specifically, the film may be heated roll-to-roll by installing far-infrared heaters such as ceramic heaters between the rolls, or the film may be heated by passing it through a far-infrared dryer. The temperature during heating is preferably within the same range as the cooling temperature in (1) above.

[0095] Furthermore, the processes described in (2) to (4) above may be carried out simultaneously with film manufacturing by installing the necessary equipment within the film manufacturing line, or the film may be wound into a roll first, and then these processes may be carried out on the film roll using equipment outside the manufacturing line.

[0096] (Uses of this film) This film can be used in various semiconductor manufacturing processes, such as polishing, dicing, and heat-resistant processes. It can also be used as a protective film for semiconductor manufacturing process films used in each of these semiconductor manufacturing processes. In particular, this film can be suitably used as a protective film for the wafer surface (circuit formation surface) in wafer polishing processes, such as back grinding.

[0097] When using this film in a semiconductor manufacturing process, it is preferable to laminate an adhesive layer on one or both sides of the film.

[0098] In this case, examples of adhesives or bonding agents (hereinafter referred to as "adhesives, etc.") that constitute the adhesive layer include acrylic, epoxy, allyl, silicone, or fluorine-based adhesives. Among these, acrylic adhesives, etc. are preferred in terms of heat resistance and ease of adjusting adhesive strength.

[0099] The adhesive, etc., may be a curable adhesive or a non-curable adhesive. However, it is preferable to use a curable adhesive, etc., because curing it before heat treatment suppresses the acceleration of adhesion due to high temperatures during heat treatment, making it easier to pick up semiconductor chips without leaving any adhesive residue.

[0100] Examples of the curable adhesives include photocurable adhesives that crosslink and harden upon light irradiation, and thermosetting adhesives that crosslink and harden upon heating. Since the resin film of the present invention has excellent UV transmission performance, it is particularly preferable to use a photocurable adhesive. Examples of the aforementioned photocurable adhesives include photocurable adhesives that mainly consist of a polymerizable polymer and contain a photopolymerization initiator.

[0101] The thickness of the adhesive layer is not particularly limited, but a preferred lower limit is 5 μm and a preferred upper limit is 100 μm. When the thickness of the adhesive layer is within this range, it can be attached to the semiconductor wafer with sufficient adhesive strength, protecting the semiconductor wafer during processing. It also makes it easier to adjust the deformation stress to an appropriate range. A more preferred lower limit for the thickness of the adhesive layer is 10 μm, a more preferred upper limit is 70 μm, an even more preferred lower limit is 20 μm, and an even more preferred upper limit is 50 μm.

[0102] The means for forming the adhesive layer are arbitrary. For example, adhesive layers in the form of a film or spots can be formed by applying a composition such as an adhesive onto the film, or by transferring (depositioning) an adhesive layer formed on a separator.

[0103] <Explanation of terms and phrases> In this invention, the term "film" includes "sheets," and the term "sheet" includes "film."

[0104] In this invention, when "X~Y" (where X and Y are any numbers) is written, unless otherwise specified, it means "X or greater and Y or less," and also includes the meaning of "preferably greater than X" or "preferably less than Y." Furthermore, when "X or greater" (where X is any number) is written, unless otherwise specified, it includes the meaning of "preferably greater than X," and when "Y or less" (where Y is any number) is written, unless otherwise specified, it also includes the meaning of "preferably less than Y." [Examples]

[0105] Next, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to the examples described below.

[0106] <Evaluation Method> In the following, various physical properties were measured and evaluated as follows.

[0107] (Average maximum diameter, average thickness, and average aspect ratio of the filler material) Thirty packing particles were arbitrarily selected, and each packing particle was observed using a field emission scanning electron microscope (NOVANanoSEM, Thermo Fisher Scientific, magnification 5,000 to 500,000x). The maximum diameter and thickness of each packing particle were measured, and the aspect ratio was calculated using the following formula. In addition, the average maximum diameter, average thickness, and average aspect ratio were calculated as the average values ​​of these 30 particles. Aspect ratio = Maximum diameter / Thickness

[0108] (UV transmittance) For the films (samples) obtained in the examples and comparative examples, the total light transmittance from 200 to 800 nm was measured using a spectrophotometer (Hitachi High-Tech Science Co., Ltd. Spectrophotometer U-3900H) in accordance with JIS K 7375, and the transmittance at each wavelength was obtained.

[0109] (Coefficient of linear expansion) For the films (samples) obtained in the examples and comparative examples, a thermomechanical analyzer (TMA / SDTA841, Mettler Toledo) was used in accordance with JIS K7197:2012. The test specimen width was 6 mm, the distance between measuring chucks was 10 mm, and the measurement was performed in tensile mode. The temperature was increased from 40 to 300°C at a rate of 5°C / min, held at 240°C for 1 hour, then cooled to 40°C at a rate of 5°C / min, and then increased again to 300°C at a rate of 5°C / min. The numerical value of the measurement result at 40 to 300°C was defined as the coefficient of linear expansion (ppm / °C). Measurements in the examples and comparative examples were performed in the direction perpendicular to the resin flow direction of the film (TD).

[0110] (Tensile elongation at fracture) For the films (samples) obtained in the examples and comparative examples, the tensile elongation at break (%) of the film was measured at a tensile speed of 200 mm / min and an ambient temperature of 23°C, in accordance with JIS K7127:1999. The average of five measured values ​​is shown in Table 1. The measurements were taken in the direction perpendicular to the resin flow direction of the film (TD).

[0111] (Relative crystallinity) For the films (samples) obtained in the examples and comparative examples, the heat energy of the crystal melting peak (J / g) and the heat energy of the recrystallization peak (J / g) were determined from the DSC curves detected when the temperature was increased from 23 to 400°C at a rate of 10°C / min using a differential scanning calorimeter Pyris1 DSC (manufactured by PerkinElmer). The relative degree of crystallinity was then calculated using the following formula. Relative crystallinity (%) = {1 - (ΔHc / ΔHm)} × 100 ΔHc: Heat energy (J / g) of the recrystallization peak under a 10°C / min heating condition for the film. ΔHm: Heat energy (J / g) at the crystal melting peak under a 10°C / min heating condition for the film.

[0112] (Glass transition temperature / Crystal melting temperature) For each raw material and the resulting film, the glass transition temperature (Tg) and crystal melting temperature (Tm) were determined from the DSC curves detected when the temperature was increased from 23 to 400°C at a rate of 10°C / min using a differential scanning calorimeter Pyris1 DSC (manufactured by PerkinElmer) in accordance with JIS K7121:2012, then decreased to 23°C at a rate of 10°C / min, and then increased again to 400°C at a rate of 10°C / min. The crystal melting temperature (Tm) was defined as the temperature of the peak top of the detected endothermic peak.

[0113] [Raw materials] The following raw materials were used in the examples and comparative examples.

[0114] a-1-1: A masterbatch containing 70% by mass of polyether ether ketone (PEEK, molecular weight distribution 5.1, mass-average molecular weight 87000, crystal melting temperature 340°C, heat of fusion 41 J / g, crystallization temperature 295°C) and 30% by mass of the mica listed below. a-1-2: Polyether ether ketone (PEEK, molecular weight distribution 4.0, mass-average molecular weight 100,000, crystallization temperature 339°C, heat of fusion 40 J / g, crystallization temperature 295°C) b-1: Polyphenylene sulfone (PPSU, amorphous resin with a glass transition temperature of 220°C and a heat of fusion of 0 J / g, with 78 repeating units of polyphenylene sulfone) b-2: Polyethersulfone (PES, amorphous resin with a glass transition temperature of 225°C and a heat of fusion of 0 J / g, with 45 repeating units of polyethersulfone) b-3: Polysulfone (PSU, SOLVAY's "Udel P1700", amorphous resin with a glass transition temperature of 190°C)

[0115] Mica: Average maximum diameter 4.0 μm, average thickness 0.13 μm, average aspect ratio 33

[0116] [Examples 1-3] After dry-blending the raw materials in the proportions shown in Table 1, the mixture was kneaded at 380°C using a Φ40mm single-screw extruder, extruded through a T-die, and then cooled on a casting roll at 210°C to produce a crystallized film (sample) with a thickness of 50 μm. Using the obtained film (sample), UV transmittance, coefficient of thermal expansion, tensile elongation at break, relative crystallinity, crystal melting temperature, and glass transition temperature were measured.

[0117] [Comparative Examples 1 and 2] The above raw materials were kneaded at 380°C using a Φ40mm single-screw extruder, extruded through a T-die, and then cooled on a casting roll at 210°C to produce a 50μm thick film (sample). Using the obtained film (sample), UV transmittance, coefficient of thermal expansion, tensile elongation at break, relative crystallinity, crystal melting temperature, and glass transition temperature were measured.

[0118]

Table 1

[0119] <Investigation> From the results of the above Examples and Comparative Examples, it was found that with respect to (A) polyaryl ether ketone and (B) resins other than polyaryl ether ketone, by selecting and mixing them at an appropriate ratio, the UV transmittance at 400 nm of the resin film can be made 25% or more. Furthermore, in addition to these resins, by mixing an appropriate filler at an appropriate content ratio, the linear expansion coefficient of the film can be made 90×10 -6 / °C or less. For such a film, while maintaining the film properties, it has a high UV transmittance and a sufficiently small linear expansion coefficient, so it can be usefully used as a film for semiconductor manufacturing processes, particularly as a protective film for wafer polishing.< / psu> < / pes> < / ppsu>

Claims

1. (A) a polyaryletherketone, and (B) a resin other than the polyaryletherketone (A), wherein the UV transmittance at a wavelength of 400 nm is 25% or more. (B) A resin composition for semiconductor manufacturing processes, wherein the resin other than polyaryletherketone is an amorphous resin, and the amorphous resin is polyphenylsulfone.

2. The resin composition for semiconductor manufacturing processes according to claim 1, further comprising (C) a filler.

3. The resin composition for semiconductor manufacturing processes according to claim 1 or 2, wherein the mass ratio of (A) polyaryletherketone to (B) resin other than (A) polyaryletherketone is 90:10 to 10:

90.

4. The resin composition for semiconductor manufacturing processes according to claim 2, wherein the content of filler (C) is 1 to 50 parts by mass with respect to 100 parts by mass of the total mass of (A) and (B).

5. The resin composition for semiconductor manufacturing processes according to any one of claims 1 to 4, wherein the resin other than the polyaryletherketone (B)(A) has a glass transition temperature of 180°C or higher.

6. The resin composition for semiconductor manufacturing processes according to any one of claims 1 to 5, wherein the polyaryl ether ketone is a polyether ether ketone.

7. The resin composition for semiconductor manufacturing processes according to claim 2, wherein the filler is mainly composed of a flake-shaped filler, a plate-shaped filler, a thin flake-shaped filler, or a mixture of two or more of these.

8. The resin composition for semiconductor manufacturing processes according to claim 2 or 7, wherein the filler has an average aspect ratio of 10 or more.

9. The resin composition for semiconductor manufacturing processes according to any one of claims 2, 7, and 8, wherein the filler has an average maximum diameter of 30 μm or less.

10. The resin composition for semiconductor manufacturing processes according to any one of claims 2 and 7 to 9, wherein the filler has an average thickness of 1 μm or less.

11. The resin composition for semiconductor manufacturing processes according to any one of claims 2 and 7 to 10, wherein the filler is mainly composed of mica.

12. A resin composition for semiconductor manufacturing processes according to any one of claims 1 to 11, wherein the coefficient of linear thermal expansion is 90 ppm / °C or less.

13. A film for semiconductor manufacturing processes comprising the resin composition according to any one of claims 1 to 12.

14. A film for semiconductor manufacturing processes according to claim 13, wherein the relative crystallinity is 60% or more.

15. A film for semiconductor manufacturing processes according to claim 13 or 14, which is for wafer polishing.

Images